Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HCPL0601R2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 3.75kV Case: SO8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 10kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC7812BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800 Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Kind of voltage regulator: fixed; linear Mounting: SMD Case: DPAK Tolerance: ±4% Output voltage: 12V Output current: 1A Voltage drop: 2V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 15.5...27V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74ACT157DG | ONSEMI |
![]() Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube Type of integrated circuit: digital Number of channels: 4 Number of inputs: 4 Mounting: SMD Case: SOIC16 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Family: ACT Manufacturer series: ACT Technology: TTL Kind of integrated circuit: multiplexer |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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BAR43 | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.75A Kind of package: reel; tape Power dissipation: 0.29W Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGY100T65SCDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Collector-emitter voltage: 650V Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Type of transistor: IGBT Power dissipation: 375W Kind of package: tube Gate charge: 157nC Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMS86101A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF01S | ONSEMI |
![]() Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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FDMC7660S | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Case: Power33 Mounting: SMD Kind of package: reel; tape Drain current: 40A Polarisation: unipolar Gate charge: 66nC Technology: PowerTrench® Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 200A On-state resistance: 3.1mΩ Power dissipation: 41W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FOD3184 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 0...35V Turn-off time: 24ns Turn-on time: 38ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FOD3184S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: MOSFET Insulation voltage: 5kV Case: PDIP8 Slew rate: 50kV/μs Max. off-state voltage: 5V Manufacturer series: FOD3184 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74VHC14MX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NRVUS1JFA | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Case: SOD123F Max. off-state voltage: 0.6kV Max. forward voltage: 1.7V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 30A Application: automotive industry Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TIP126TU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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NTS4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Case: SC70; SOT323 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 0.2A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.33W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 3314 шт: термін постачання 21-30 дні (днів) |
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NTA4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD Case: SC75 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.238A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Version: ESD Kind of channel: enhancement Gate-source voltage: ±10V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TL431BVDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Case: SO8 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Tolerance: ±0.4% Reference voltage: 2.495V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDP80N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 320A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74ACT14DG | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT Number of inputs: 1 |
на замовлення 122 шт: термін постачання 21-30 дні (днів) |
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MC74ACT14DR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: ACT Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74ACT14DTR2G | ONSEMI |
![]() Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Technology: TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: ACT Manufacturer series: ACT Number of inputs: 1 Kind of integrated circuit: hex; inverter; Schmitt trigger |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ES3B | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC74MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape Type of integrated circuit: digital Operating temperature: -40...85°C Case: SO14 Supply voltage: 2...5.5V DC Mounting: SMD Number of channels: 2 Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: VHC Technology: CMOS Kind of integrated circuit: D flip-flop |
на замовлення 2246 шт: термін постачання 21-30 дні (днів) |
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MC74ACT245DWR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Manufacturer series: ACT Kind of output: 3-state |
на замовлення 660 шт: термін постачання 21-30 дні (днів) |
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SMUN5113DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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LM258N | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Voltage supply range: ± 1.5...16V DC; 3...32V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
2SA2040-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Mounting: SMD Frequency: 330MHz Collector-emitter voltage: 50V Current gain: 200...560 Collector current: 8A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar Kind of package: reel; tape Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTGS4141NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 3.6A |
на замовлення 4619 шт: термін постачання 21-30 дні (днів) |
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FAN73895MX | ONSEMI |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Case: SO28-W Supply voltage: 10...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 6 Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
KSD363RTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB Frequency: 10MHz Collector-emitter voltage: 120V Current gain: 40...80 Collector current: 6A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBFJ270 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
на замовлення 622 шт: термін постачання 21-30 дні (днів) |
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MMBFJ176 | ONSEMI |
![]() Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 250Ω |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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MMBFJ108 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 80mA Power dissipation: 0.35W Case: SuperSOT-3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 8Ω |
на замовлення 1708 шт: термін постачання 21-30 дні (днів) |
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MMBFJ110 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA On-state resistance: 18Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF2N80 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF2N80YDTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.95A Pulsed drain current: 6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5929BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Case: CASE59 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 15V Leakage current: 1µA Power dissipation: 3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: 1N59xxB Mounting: THT |
на замовлення 4215 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT50ADR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Number of channels: 6 Type of integrated circuit: digital Quiescent current: 40µA Manufacturer series: VHCT Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Case: SO14 Mounting: SMD |
на замовлення 502 шт: термін постачання 21-30 дні (днів) |
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NLU1GT50AMX1TCG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6 Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Number of channels: 1 Type of integrated circuit: digital Quiescent current: 40µA Technology: CMOS; TTL Kind of integrated circuit: buffer; non-inverting Case: ULLGA6 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT2907ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT2907ALT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NSS40201LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 40V Current gain: 200 Collector current: 2A Type of transistor: NPN Application: automotive industry Power dissipation: 0.54W Polarisation: bipolar Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 150MHz |
на замовлення 609 шт: термін постачання 21-30 дні (днів) |
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MMBF4391LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 30Ω |
на замовлення 1177 шт: термін постачання 21-30 дні (днів) |
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FDMS86300DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMS86200DC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMS3669S | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Case: Power56 Drain-source voltage: 30/30V Drain current: 24/60A On-state resistance: 14.5/7.1mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.2/2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24/34nC Kind of channel: enhancement Gate-source voltage: ±20/±12V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMS7620S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 13/22A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 30/15.1mΩ Mounting: SMD Gate charge: 11/23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMS9600S | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 32/30A Pulsed drain current: 60A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13/8.3mΩ Mounting: SMD Gate charge: 13/29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBT3906LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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SMMBT3906LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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SMMBT3906WT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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SMMBT4403LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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NTJS3157NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±8V |
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NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
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NLASB3157MTR2G | ONSEMI |
![]() Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT Type of integrated circuit: analog switch Case: WDFN6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 1 Quiescent current: 10µA Kind of output: SPDT Technology: CMOS |
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SBC847BDW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 2094 шт: термін постачання 21-30 дні (днів) |
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SMMBT5401LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
DFB2040 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A Case: TS-6P Max. off-state voltage: 0.4kV Load current: 20A Kind of package: tube Leads: flat pin Max. forward voltage: 1.1V Max. forward impulse current: 250A Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase |
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MC74AC273DWG | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: SO20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Trigger: positive-edge-triggered Quiescent current: 80µA Kind of package: reel; tape |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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MJE15029G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB Collector-emitter voltage: 120V Collector current: 8A Type of transistor: PNP Power dissipation: 50W Polarisation: bipolar Kind of package: tube Case: TO220AB Mounting: THT Frequency: 30MHz |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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FDP52N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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HCPL0601R2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
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MC7812BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; linear
Mounting: SMD
Case: DPAK
Tolerance: ±4%
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; linear
Mounting: SMD
Case: DPAK
Tolerance: ±4%
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 15.5...27V
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MC74ACT157DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Type of integrated circuit: digital
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Type of integrated circuit: digital
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
на замовлення 238 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.46 грн |
10+ | 55.04 грн |
25+ | 37.87 грн |
67+ | 35.80 грн |
BAR43 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
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FGY100T65SCDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Type of transistor: IGBT
Power dissipation: 375W
Kind of package: tube
Gate charge: 157nC
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Type of transistor: IGBT
Power dissipation: 375W
Kind of package: tube
Gate charge: 157nC
Case: TO247-3
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FDMS86101A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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DF01S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.94 грн |
13+ | 30.62 грн |
FDMC7660S |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain current: 40A
Polarisation: unipolar
Gate charge: 66nC
Technology: PowerTrench®
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 200A
On-state resistance: 3.1mΩ
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Drain current: 40A
Polarisation: unipolar
Gate charge: 66nC
Technology: PowerTrench®
Drain-source voltage: 30V
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 200A
On-state resistance: 3.1mΩ
Power dissipation: 41W
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FOD3184 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 24ns
Turn-on time: 38ns
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 24ns
Turn-on time: 38ns
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FOD3184S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3184
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74VHC14MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
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NRVUS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Mounting: SMD
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TIP126TU |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
NTS4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 3314 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.03 грн |
32+ | 12.40 грн |
50+ | 7.75 грн |
100+ | 6.28 грн |
187+ | 4.88 грн |
512+ | 4.57 грн |
NTA4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Mounting: SMD
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TL431BVDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Tolerance: ±0.4%
Reference voltage: 2.495V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Tolerance: ±0.4%
Reference voltage: 2.495V
Maximum output current: 0.1A
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FDP80N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
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MC74ACT14DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
на замовлення 122 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.82 грн |
7+ | 58.76 грн |
10+ | 46.82 грн |
25+ | 34.03 грн |
36+ | 25.66 грн |
98+ | 24.26 грн |
110+ | 23.33 грн |
MC74ACT14DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
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MC74ACT14DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Manufacturer series: ACT
Number of inputs: 1
Kind of integrated circuit: hex; inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Manufacturer series: ACT
Number of inputs: 1
Kind of integrated circuit: hex; inverter; Schmitt trigger
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ES3B |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
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74VHC74MTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
на замовлення 2246 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.60 грн |
15+ | 26.35 грн |
25+ | 20.62 грн |
69+ | 13.41 грн |
188+ | 12.71 грн |
1500+ | 12.25 грн |
MC74ACT245DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Manufacturer series: ACT
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Manufacturer series: ACT
Kind of output: 3-state
на замовлення 660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 128.55 грн |
5+ | 85.27 грн |
10+ | 71.62 грн |
22+ | 43.10 грн |
59+ | 40.77 грн |
500+ | 39.22 грн |
SMUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.03 грн |
40+ | 9.92 грн |
54+ | 7.21 грн |
101+ | 3.84 грн |
123+ | 3.16 грн |
291+ | 3.13 грн |
800+ | 2.96 грн |
LM258N | ![]() |
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Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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2SA2040-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
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NTGS4141NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 3.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 3.6A
на замовлення 4619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.90 грн |
18+ | 21.63 грн |
65+ | 14.03 грн |
178+ | 13.33 грн |
500+ | 12.71 грн |
FAN73895MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
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KSD363RTU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB
Frequency: 10MHz
Collector-emitter voltage: 120V
Current gain: 40...80
Collector current: 6A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB
Frequency: 10MHz
Collector-emitter voltage: 120V
Current gain: 40...80
Collector current: 6A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
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MMBFJ270 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
на замовлення 622 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.90 грн |
16+ | 25.73 грн |
50+ | 20.15 грн |
74+ | 12.40 грн |
202+ | 11.70 грн |
MMBFJ176 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 250Ω
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 250Ω
на замовлення 94 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.57 грн |
15+ | 26.82 грн |
50+ | 19.84 грн |
66+ | 13.80 грн |
MMBFJ108 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
на замовлення 1708 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.90 грн |
14+ | 27.75 грн |
58+ | 15.97 грн |
157+ | 15.04 грн |
500+ | 14.88 грн |
1000+ | 14.57 грн |
MMBFJ110 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
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FQPF2N80 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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FQPF2N80YDTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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1N5929BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1N59xxB
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1N59xxB
Mounting: THT
на замовлення 4215 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.70 грн |
25+ | 15.74 грн |
50+ | 12.17 грн |
100+ | 10.70 грн |
111+ | 8.19 грн |
305+ | 7.74 грн |
500+ | 7.67 грн |
1000+ | 7.44 грн |
MC74VHCT50ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Type of integrated circuit: digital
Quiescent current: 40µA
Manufacturer series: VHCT
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Mounting: SMD
на замовлення 502 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.28 грн |
11+ | 35.66 грн |
25+ | 29.22 грн |
46+ | 20.08 грн |
125+ | 18.99 грн |
NLU1GT50AMX1TCG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS,TTL; SMD; ULLGA6
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Quiescent current: 40µA
Technology: CMOS; TTL
Kind of integrated circuit: buffer; non-inverting
Case: ULLGA6
Mounting: SMD
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SMMBT2907ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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SMMBT2907ALT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSS40201LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 40V
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.54W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 40V
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.54W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 150MHz
на замовлення 609 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
23+ | 17.21 грн |
50+ | 12.48 грн |
75+ | 11.55 грн |
90+ | 10.23 грн |
247+ | 9.61 грн |
MMBF4391LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
на замовлення 1177 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 23.04 грн |
25+ | 16.90 грн |
50+ | 14.19 грн |
100+ | 11.63 грн |
111+ | 8.22 грн |
304+ | 7.83 грн |
500+ | 7.67 грн |
1000+ | 7.60 грн |
FDMS86300DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86200DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3669S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Mounting: SMD
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FDMS7620S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
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SMMBT3906LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NTJS3157NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
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NLAS3157MX3TCG |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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NLASB3157MTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Quiescent current: 10µA
Kind of output: SPDT
Technology: CMOS
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SBC847BDW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.20 грн |
32+ | 12.48 грн |
37+ | 10.62 грн |
75+ | 8.68 грн |
100+ | 8.22 грн |
154+ | 5.89 грн |
424+ | 5.58 грн |
SMMBT5401LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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DFB2040 |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
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MC74AC273DWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Quiescent current: 80µA
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Quiescent current: 80µA
Kind of package: reel; tape
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 129.39 грн |
10+ | 66.82 грн |
21+ | 43.72 грн |
58+ | 41.32 грн |
MJE15029G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Frequency: 30MHz
на замовлення 57 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.27 грн |
10+ | 102.32 грн |
11+ | 88.37 грн |
29+ | 83.72 грн |
FDP52N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.79 грн |
9+ | 106.19 грн |
24+ | 100.77 грн |