Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMBD1204 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4148 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Kind of package: bulk; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC6420C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3/-2.2A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 70/125mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 1728 шт: термін постачання 21-30 дні (днів) |
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FDC610PZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -30V Drain current: -4.9A |
на замовлення 1826 шт: термін постачання 21-30 дні (днів) |
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FDC6310P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 On-state resistance: 184mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -2.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC655BN | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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NTD20N03L27T4G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11D1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Case: DIP6 Max. off-state voltage: 6V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
на замовлення 625 шт: термін постачання 21-30 дні (днів) |
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H11D1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Type of optocoupler: optocoupler Mounting: SMD Case: PDIP6 Max. off-state voltage: 6V Collector-emitter voltage: 300V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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H11D1SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Type of optocoupler: optocoupler Mounting: SMD Case: PDIP6 Max. off-state voltage: 6V Collector-emitter voltage: 300V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74VHC00MTC | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of gate: NAND Number of inputs: 2 Family: VHC |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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74VHC00MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Family: VHC Quiescent current: 20µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74VHC00DTG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Quiescent current: 40µA Kind of package: tube Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74VHC00DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC74VHC00DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BC638TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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sm05t1g | ONSEMI |
![]() ![]() Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD Type of diode: TVS array Breakdown voltage: 6.7V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Kind of package: reel; tape Leakage current: 10µA Version: ESD Max. forward impulse current: 17A |
на замовлення 1208 шт: термін постачання 21-30 дні (днів) |
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SRDA05-4R2G | ONSEMI |
![]() Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Mounting: SMD Case: SO8 Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Capacitance: 8pF Version: ESD |
на замовлення 2496 шт: термін постачання 21-30 дні (днів) |
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FPF2495UCX | ONSEMI |
![]() ![]() Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBTA14LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FGY120T65SPD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 378A Type of transistor: IGBT Power dissipation: 441W Gate charge: 162nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7SP125P5X | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC70-5 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 0.9µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MBR41H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. load current: 40A Max. forward voltage: 0.76V Max. forward impulse current: 350A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBRF30L60CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.73V Max. load current: 30A Max. forward impulse current: 0.24kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FAN3217TMX-F085 | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Impulse rise time: 22ns Application: automotive industry Pulse fall time: 17ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3268TMX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Impulse rise time: 22ns Pulse fall time: 17ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FAN3278TMX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -1.5...1A Number of channels: 2 Supply voltage: 8...27V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP785AH33T1G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 3.3V Output current: 10mA Case: SOT89 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±5% Number of channels: 1 Input voltage: 25...450V Manufacturer series: NCP785A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BAT54CTT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT416 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SS14FP | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBR140ESFT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.56V Kind of package: reel; tape Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SS16FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SS16FP | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3082M | ONSEMI |
![]() Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Manufacturer series: MOC3082M Case: DIP6 Max. off-state voltage: 3V Output voltage: 800V Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 5.3kV Trigger current: 10mA Type of optocoupler: optotriac Mounting: THT |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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MOC3082SR2VM | ONSEMI |
![]() Description: Optotriac; 5.3kV; zero voltage crossing driver; Gull wing 6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: Gull wing 6 Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M |
на замовлення 688 шт: термін постачання 21-30 дні (днів) |
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FDB070AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 60V Drain current: 80A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 175W Polarisation: unipolar Kind of package: reel; tape Gate charge: 66nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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SB07-03C-TB-E | ONSEMI |
![]() Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape Mounting: SMD Case: SC59 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 0.7A Semiconductor structure: single diode Max. forward impulse current: 5A Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FFSP1665A | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube Mounting: THT Technology: SiC Case: TO220-2 Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Kind of package: tube Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCH170N60 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMSD4148T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HCT138M | ONSEMI |
![]() Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Kind of package: tube Manufacturer series: HCT Technology: TTL Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HCT138ADR2G | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Mounting: SMD Case: SOIC16 Family: HCT Supply voltage: 2...6V DC Number of inputs: 6 Number of channels: 1 Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS; TTL Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74HCT138ADTR2G | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Mounting: SMD Case: TSSOP16 Family: HCT Supply voltage: 2...6V DC Number of inputs: 6 Number of channels: 1 Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS; TTL Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HCT138MX | ONSEMI |
![]() Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Quiescent current: 160µA Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BLDC-GEVK | ONSEMI |
![]() Description: Expansion board; prototype board; Comp: LV8907UWR2G Kit contents: prototype board Interface: I2C; I2C - Slave; SPI Type of accessories for development kits: expansion board Components: LV8907UWR2G development kits accessories features: Arduino Shield compatible; brushless DC motor driver Kind of connector: pin strips; screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMMBD7000LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 1.6A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 1.6A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP431AVSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 594 шт: термін постачання 21-30 дні (днів) |
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NSVRB521S30T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Case: SOD523 Max. off-state voltage: 30V Max. forward voltage: 0.5V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBR3100RLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V Type of diode: Schottky rectifying Case: DO201AD Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.69V Max. forward impulse current: 150A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDD4141 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -10.8A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2342 шт: термін постачання 21-30 дні (днів) |
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BZX84C2V7LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 20uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 20µA |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BZX79C2V7 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 75µA |
на замовлення 2430 шт: термін постачання 21-30 дні (днів) |
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MJD112G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Case: DPAK Mounting: SMD Collector-emitter voltage: 100V Current gain: 100...12000 Collector current: 2A Type of transistor: NPN Power dissipation: 1.75W Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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MJD112-1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK Case: IPAK Mounting: THT Collector-emitter voltage: 100V Current gain: 100...12000 Collector current: 2A Type of transistor: NPN Power dissipation: 1.75W Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
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NCP4318ALCDR2G | ONSEMI |
![]() Description: IC: PMIC; resonant mode controller; -4.5÷1.5A; 22÷500kHz; Ch: 1 Type of integrated circuit: PMIC Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 6.5...35V DC Kind of package: reel; tape Topology: push-pull; resonant LLC Frequency: 22...500kHz Output current: -4.5...1.5A Number of channels: 1 Kind of integrated circuit: resonant mode controller |
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В кошику од. на суму грн. | ||||||||||||||||
MBRF20100CTG | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.85V Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14007UBDG | ONSEMI |
![]() Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: complementary pair Kind of gate: combination; NOT Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 30µA |
на замовлення 159 шт: термін постачання 21-30 дні (днів) |
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4N35M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: THT Case: DIP6 |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
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1N5818RLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.88V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.88V Max. forward impulse current: 25A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5348BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 11V; bulk; CASE017AA; single diode; 5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 11V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. |
MMBD1204 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
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1N4148 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Kind of package: bulk; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Kind of package: bulk; tape
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од. на суму грн.
FDC6420C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1728 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.02 грн |
10+ | 40.31 грн |
44+ | 20.84 грн |
119+ | 19.69 грн |
1000+ | 18.93 грн |
FDC610PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4.9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4.9A
на замовлення 1826 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.84 грн |
16+ | 23.99 грн |
57+ | 16.25 грн |
155+ | 15.40 грн |
250+ | 15.25 грн |
500+ | 14.87 грн |
FDC6310P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
On-state resistance: 184mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.2A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
On-state resistance: 184mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.2A
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FDC655BN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.26 грн |
15+ | 26.06 грн |
50+ | 20.92 грн |
79+ | 11.57 грн |
217+ | 10.96 грн |
NTD20N03L27T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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од. на суму грн.
H11D1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
на замовлення 625 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.02 грн |
12+ | 33.64 грн |
34+ | 26.59 грн |
93+ | 25.14 грн |
250+ | 24.45 грн |
500+ | 24.14 грн |
H11D1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.40 грн |
10+ | 45.98 грн |
25+ | 41.92 грн |
28+ | 32.95 грн |
75+ | 31.19 грн |
500+ | 29.96 грн |
H11D1SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
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74VHC00MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.79 грн |
74VHC00MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 20µA
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 20µA
Kind of package: reel; tape
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MC74VHC00DTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Quiescent current: 40µA
Kind of package: tube
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Quiescent current: 40µA
Kind of package: tube
Technology: CMOS
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MC74VHC00DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
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MC74VHC00DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
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BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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sm05t1g | ![]() |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
на замовлення 1208 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.16 грн |
49+ | 7.89 грн |
57+ | 6.84 грн |
75+ | 5.79 грн |
100+ | 5.52 грн |
218+ | 4.21 грн |
500+ | 4.13 грн |
598+ | 3.98 грн |
SRDA05-4R2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Capacitance: 8pF
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Capacitance: 8pF
Version: ESD
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.15 грн |
10+ | 59.01 грн |
20+ | 45.21 грн |
55+ | 42.91 грн |
FPF2495UCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
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SMMBTA14LT1G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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FGY120T65SPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Type of transistor: IGBT
Power dissipation: 441W
Gate charge: 162nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Type of transistor: IGBT
Power dissipation: 441W
Gate charge: 162nC
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NC7SP125P5X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
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MBR41H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 0.76V
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 0.76V
Max. forward impulse current: 350A
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MBRF30L60CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
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FAN3217TMX-F085 |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Application: automotive industry
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Application: automotive industry
Pulse fall time: 17ns
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FAN3268TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
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FAN3278TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
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NCP785AH33T1G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 10mA
Case: SOT89
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Manufacturer series: NCP785A
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 10mA
Case: SOT89
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Manufacturer series: NCP785A
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BAT54CTT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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SS14FP |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
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MBR140ESFT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
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SS16FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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SS16FP |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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MOC3082M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Manufacturer series: MOC3082M
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Trigger current: 10mA
Type of optocoupler: optotriac
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Manufacturer series: MOC3082M
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 800V
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Trigger current: 10mA
Type of optocoupler: optotriac
Mounting: THT
на замовлення 44 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.19 грн |
10+ | 72.80 грн |
15+ | 62.07 грн |
41+ | 59.01 грн |
MOC3082SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; Gull wing 6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; Gull wing 6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
на замовлення 688 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.10 грн |
10+ | 45.44 грн |
23+ | 40.46 грн |
50+ | 38.24 грн |
100+ | 36.78 грн |
FDB070AN06A0 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 175W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 175W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 412.64 грн |
SB07-03C-TB-E |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape
Mounting: SMD
Case: SC59
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape
Mounting: SMD
Case: SC59
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
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FFSP1665A |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Mounting: THT
Technology: SiC
Case: TO220-2
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Mounting: THT
Technology: SiC
Case: TO220-2
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
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FCH170N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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SMMSD4148T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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MM74HCT138M |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Manufacturer series: HCT
Technology: TTL
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Manufacturer series: HCT
Technology: TTL
Operating temperature: -40...85°C
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MC74HCT138ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: SOIC16
Family: HCT
Supply voltage: 2...6V DC
Number of inputs: 6
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: SOIC16
Family: HCT
Supply voltage: 2...6V DC
Number of inputs: 6
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
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MC74HCT138ADTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: TSSOP16
Family: HCT
Supply voltage: 2...6V DC
Number of inputs: 6
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: TSSOP16
Family: HCT
Supply voltage: 2...6V DC
Number of inputs: 6
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
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MM74HCT138MX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS
Operating temperature: -40...85°C
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BLDC-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LV8907UWR2G
Kit contents: prototype board
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
Components: LV8907UWR2G
development kits accessories features: Arduino Shield compatible; brushless DC motor driver
Kind of connector: pin strips; screw
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LV8907UWR2G
Kit contents: prototype board
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
Components: LV8907UWR2G
development kits accessories features: Arduino Shield compatible; brushless DC motor driver
Kind of connector: pin strips; screw
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SMMBD7000LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 1.6A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 1.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 1.6A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 1.6A
Kind of package: reel; tape
Application: automotive industry
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NCP431AVSNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 594 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.04 грн |
13+ | 31.42 грн |
18+ | 22.07 грн |
100+ | 9.58 грн |
105+ | 8.58 грн |
288+ | 8.12 грн |
NSVRB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Case: SOD523
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Case: SOD523
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
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MBR3100RLG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: reel; tape
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FDD4141 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2342 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.32 грн |
8+ | 50.88 грн |
23+ | 40.54 грн |
61+ | 38.32 грн |
500+ | 37.86 грн |
BZX84C2V7LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 20uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 20uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 20µA
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 206.32 грн |
BZX79C2V7 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 75µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 75µA
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.90 грн |
58+ | 6.67 грн |
71+ | 5.44 грн |
118+ | 3.26 грн |
250+ | 2.44 грн |
484+ | 1.89 грн |
1000+ | 1.72 грн |
MJD112G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Case: DPAK
Mounting: SMD
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Case: DPAK
Mounting: SMD
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.72 грн |
10+ | 39.93 грн |
25+ | 29.96 грн |
46+ | 19.46 грн |
127+ | 18.39 грн |
MJD112-1G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Case: IPAK
Mounting: THT
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Case: IPAK
Mounting: THT
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 129 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.37 грн |
8+ | 53.80 грн |
21+ | 43.76 грн |
57+ | 41.38 грн |
NCP4318ALCDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -4.5÷1.5A; 22÷500kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 6.5...35V DC
Kind of package: reel; tape
Topology: push-pull; resonant LLC
Frequency: 22...500kHz
Output current: -4.5...1.5A
Number of channels: 1
Kind of integrated circuit: resonant mode controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -4.5÷1.5A; 22÷500kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 6.5...35V DC
Kind of package: reel; tape
Topology: push-pull; resonant LLC
Frequency: 22...500kHz
Output current: -4.5...1.5A
Number of channels: 1
Kind of integrated circuit: resonant mode controller
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MBRF20100CTG | ![]() |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
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MC14007UBDG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
на замовлення 159 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
15+ | 26.90 грн |
46+ | 20.23 грн |
110+ | 19.16 грн |
4N35M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
на замовлення 316 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.26 грн |
14+ | 28.66 грн |
25+ | 23.83 грн |
50+ | 20.77 грн |
51+ | 17.78 грн |
139+ | 16.86 грн |
1N5818RLG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.88V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.88V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.88V
Max. forward impulse current: 25A
Kind of package: reel; tape
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1N5348BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; bulk; CASE017AA; single diode; 5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 11V; bulk; CASE017AA; single diode; 5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 11V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
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