Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMBF4392LT1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SMMBTA06WT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTC143EET1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBRD360T4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 60V Load current: 3A Case: DPAK Max. forward voltage: 0.625V Max. load current: 6A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBC847BPDW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5245BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 1408 шт: термін постачання 21-30 дні (днів) |
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MM74HCT273WM | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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MM74HCT273MTC | ONSEMI |
![]() Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20WB Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: tube Family: HCT |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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MC74HCT595ADTR2G | ONSEMI |
![]() Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Number of inputs: 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HCT595ADR2G | ONSEMI |
![]() Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Family: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Number of inputs: 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZG03C150G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA Type of diode: Zener Power dissipation: 1.5W Zener voltage: 150V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: BZG03C Leakage current: 1µA |
на замовлення 572 шт: термін постачання 21-30 дні (днів) |
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RB520S30T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Case: SOD523 Max. off-state voltage: 30V Max. forward voltage: 0.6V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD |
на замовлення 15211 шт: термін постачання 21-30 дні (днів) |
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1SMB5915BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 3.9V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 2282 шт: термін постачання 21-30 дні (днів) |
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NCP380LSNAJAAT1G | ONSEMI |
![]() Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Case: TSOP6 Mounting: SMD Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Number of channels: 1 Output current: 0.5...2.1A Kind of output: P-Channel Active logical level: low On-state resistance: 135mΩ Control voltage: 0...5.5V DC Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP380HSN10AAT1G | ONSEMI |
![]() Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Case: TSOP5 Mounting: SMD Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Number of channels: 1 Output current: 1A Kind of output: P-Channel Active logical level: high On-state resistance: 135mΩ Control voltage: 0...5.5V DC Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP380HSN05AAT1G | ONSEMI |
![]() Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Case: TSOP5 Mounting: SMD Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Number of channels: 1 Output current: 0.5A Kind of output: P-Channel Active logical level: high On-state resistance: 135mΩ Control voltage: 0...5.5V DC Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP380LSN05AAT1G | ONSEMI |
![]() Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Case: TSOP5 Mounting: SMD Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Number of channels: 1 Output current: 0.5A Kind of output: P-Channel Active logical level: low On-state resistance: 135mΩ Control voltage: 0...5.5V DC Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP380LSN10AAT1G | ONSEMI |
![]() Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Case: TSOP5 Mounting: SMD Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Number of channels: 1 Output current: 1A Kind of output: P-Channel Active logical level: low On-state resistance: 135mΩ Control voltage: 0...5.5V DC Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HCT00MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: HCT Delay time: 14ns Kind of package: reel; tape Supply voltage: 4.5...5.5V DC Technology: CMOS Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MM74HCT00MX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Family: HCT Delay time: 14ns Kind of package: reel; tape Operating temperature: -40...85°C Technology: CMOS Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC4852ADR2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC Type of integrated circuit: analog switch Number of channels: 2 Case: SO16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Manufacturer series: HC Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC4852ADTR2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA Type of integrated circuit: analog switch Number of channels: 2 Case: TSSOP16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Manufacturer series: HC Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQPF3N80C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN5113DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LP2950ACZ-5.0RAG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
LP2950ACZ-3.0G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
LP2950ACZ-3.0RAG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
LP2950ACZ-3.3RAG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC74HC1G00DFT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC74HC1G00DFT2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
UF4006 | ONSEMI |
![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 75µA Power dissipation: 2.08W Capacitance: 17pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBF5103 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5406G | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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FDB120N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 296A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4148 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: bulk |
на замовлення 11224 шт: термін постачання 21-30 дні (днів) |
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BZX85C13 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 13V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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BZX85C11 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 11V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 11V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
на замовлення 1367 шт: термін постачання 21-30 дні (днів) |
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MMBD1503A-D87Z | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD1201 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 451 шт: термін постачання 21-30 дні (днів) |
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MMBD301LT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 200mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 1.5pF Max. forward voltage: 0.6V Kind of package: reel; tape Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBD1204 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4148 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Kind of package: bulk; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC6420C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3/-2.2A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 70/125mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Kind of transistor: complementary pair |
на замовлення 1718 шт: термін постачання 21-30 дні (днів) |
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FDC610PZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -30V Drain current: -4.9A |
на замовлення 1826 шт: термін постачання 21-30 дні (днів) |
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FDC6310P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 0.96W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -2.2A On-state resistance: 184mΩ Type of transistor: P-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
NTD20N03L27T4G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11D1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Case: DIP6 Max. off-state voltage: 6V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
на замовлення 625 шт: термін постачання 21-30 дні (днів) |
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H11D1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Type of optocoupler: optocoupler Mounting: SMD Case: PDIP6 Max. off-state voltage: 6V Collector-emitter voltage: 300V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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H11D1SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Type of optocoupler: optocoupler Mounting: SMD Case: PDIP6 Max. off-state voltage: 6V Collector-emitter voltage: 300V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74VHC00MTC | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of gate: NAND Number of inputs: 2 Family: VHC |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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74VHC00MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Family: VHC Quiescent current: 20µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74VHC00DTG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Quiescent current: 40µA Kind of package: tube Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74VHC00DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MC74VHC00DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BC638TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SRDA05-4R2G | ONSEMI |
![]() Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Mounting: SMD Case: SO8 Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Capacitance: 8pF Version: ESD |
на замовлення 2496 шт: термін постачання 21-30 дні (днів) |
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FPF2495UCX | ONSEMI |
![]() ![]() Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7SP125P5X | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC70-5 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 0.9µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MBR41H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. load current: 40A Max. forward voltage: 0.76V Max. forward impulse current: 350A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FAN3217TMX-F085 | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Impulse rise time: 22ns Application: automotive industry Pulse fall time: 17ns |
товару немає в наявності |
В кошику од. на суму грн. |
MMBF4392LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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од. на суму грн.
SMMBTA06WT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику
од. на суму грн.
DTC143EET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
товару немає в наявності
В кошику
од. на суму грн.
MBRD360T4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 3A
Case: DPAK
Max. forward voltage: 0.625V
Max. load current: 6A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 3A
Case: DPAK
Max. forward voltage: 0.625V
Max. load current: 6A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
SBC847BPDW1T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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В кошику
од. на суму грн.
MMSZ5245BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.88 грн |
69+ | 5.58 грн |
102+ | 3.76 грн |
121+ | 3.18 грн |
569+ | 1.57 грн |
MM74HCT273WM |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 86 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 103.74 грн |
10+ | 59.48 грн |
23+ | 39.37 грн |
63+ | 37.23 грн |
MM74HCT273MTC |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCT
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HCT
на замовлення 215 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.28 грн |
10+ | 46.71 грн |
31+ | 29.28 грн |
85+ | 27.67 грн |
MC74HCT595ADTR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 5
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 5
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В кошику
од. на суму грн.
MC74HCT595ADR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 5
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 5
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В кошику
од. на суму грн.
BZG03C150G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
на замовлення 572 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
21+ | 18.65 грн |
92+ | 9.78 грн |
252+ | 9.25 грн |
RB520S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Case: SOD523
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Case: SOD523
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
на замовлення 15211 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
57+ | 7.24 грн |
99+ | 3.90 грн |
137+ | 2.80 грн |
159+ | 2.42 грн |
607+ | 1.48 грн |
1000+ | 1.47 грн |
1500+ | 1.35 грн |
3000+ | 1.34 грн |
1SMB5915BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.9V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.9V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2282 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.58 грн |
39+ | 10.01 грн |
100+ | 8.33 грн |
118+ | 7.64 грн |
324+ | 7.26 грн |
500+ | 7.19 грн |
1000+ | 6.96 грн |
NCP380LSNAJAAT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 0.5...2.1A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 0.5...2.1A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
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NCP380HSN10AAT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 1A
Kind of output: P-Channel
Active logical level: high
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 1A
Kind of output: P-Channel
Active logical level: high
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
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од. на суму грн.
NCP380HSN05AAT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 0.5A
Kind of output: P-Channel
Active logical level: high
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 0.5A
Kind of output: P-Channel
Active logical level: high
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
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NCP380LSN05AAT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 0.5A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 0.5A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
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NCP380LSN10AAT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 1A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Number of channels: 1
Output current: 1A
Kind of output: P-Channel
Active logical level: low
On-state resistance: 135mΩ
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
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MM74HCT00MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Delay time: 14ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 14ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: HCT
Delay time: 14ns
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Operating temperature: -40...85°C
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MM74HCT00MX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Delay time: 14ns
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: HCT
Delay time: 14ns
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Supply voltage: 4.5...5.5V DC
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MC74HC4852ADR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Manufacturer series: HC
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Manufacturer series: HC
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
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MC74HC4852ADTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 2
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Manufacturer series: HC
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA
Type of integrated circuit: analog switch
Number of channels: 2
Case: TSSOP16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Manufacturer series: HC
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
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FQPF3N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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MUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
65+ | 6.42 грн |
100+ | 3.82 грн |
LP2950ACZ-5.0RAG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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LP2950ACZ-3.0G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
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LP2950ACZ-3.0RAG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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LP2950ACZ-3.3RAG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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MC74HC1G00DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MC74HC1G00DFT2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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UF4006 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
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MMBF5103 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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1N5406G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 505 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
31+ | 12.38 грн |
100+ | 9.86 грн |
101+ | 8.94 грн |
250+ | 8.87 грн |
277+ | 8.41 грн |
FDB120N10 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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1N4148 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: bulk
на замовлення 11224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.04 грн |
148+ | 2.60 грн |
202+ | 1.90 грн |
500+ | 1.48 грн |
1000+ | 1.31 грн |
1313+ | 0.69 грн |
3612+ | 0.65 грн |
BZX85C13 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.00 грн |
BZX85C11 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
на замовлення 1367 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
57+ | 6.80 грн |
69+ | 5.61 грн |
114+ | 3.36 грн |
250+ | 3.19 грн |
328+ | 2.74 грн |
900+ | 2.58 грн |
1000+ | 2.56 грн |
MMBD1503A-D87Z |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
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MMBD1201 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 451 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.17 грн |
50+ | 7.80 грн |
100+ | 4.34 грн |
MMBD301LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
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MMBD1204 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
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1N4148 |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Kind of package: bulk; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Kind of package: bulk; tape
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FDC6420C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Kind of transistor: complementary pair
на замовлення 1718 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.86 грн |
10+ | 40.21 грн |
44+ | 20.79 грн |
120+ | 19.65 грн |
1000+ | 18.88 грн |
FDC610PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4.9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4.9A
на замовлення 1826 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.76 грн |
16+ | 23.93 грн |
57+ | 16.21 грн |
155+ | 15.37 грн |
250+ | 15.21 грн |
500+ | 14.83 грн |
FDC6310P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 184mΩ
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.2A
On-state resistance: 184mΩ
Type of transistor: P-MOSFET x2
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NTD20N03L27T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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H11D1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
на замовлення 625 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.86 грн |
12+ | 33.56 грн |
34+ | 26.53 грн |
93+ | 25.08 грн |
250+ | 24.39 грн |
500+ | 24.08 грн |
H11D1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.21 грн |
10+ | 45.87 грн |
25+ | 41.82 грн |
28+ | 32.87 грн |
75+ | 31.11 грн |
500+ | 29.89 грн |
H11D1SR2VM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
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74VHC00MTC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.56 грн |
74VHC00MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 20µA
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 20µA
Kind of package: reel; tape
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MC74VHC00DTG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Quiescent current: 40µA
Kind of package: tube
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Quiescent current: 40µA
Kind of package: tube
Technology: CMOS
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MC74VHC00DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
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MC74VHC00DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
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BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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SRDA05-4R2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Capacitance: 8pF
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Capacitance: 8pF
Version: ESD
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 58.87 грн |
20+ | 45.10 грн |
55+ | 42.81 грн |
FPF2495UCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
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NC7SP125P5X |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
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MBR41H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 0.76V
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 0.76V
Max. forward impulse current: 350A
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FAN3217TMX-F085 |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Application: automotive industry
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Application: automotive industry
Pulse fall time: 17ns
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