Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104263) > Сторінка 1735 з 1738
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RB520CM-60T2R | ROHM SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 0.1A Semiconductor structure: single diode Case: SOD923 Max. forward voltage: 0.47V Leakage current: 3µA Kind of package: reel; tape Max. forward impulse current: 0.5A |
на замовлення 6228 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
RB520SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.58V Leakage current: 1µA Kind of package: reel; tape Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
RB520VM-40FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Case: SOD323F Max. forward voltage: 0.55V Leakage current: 10µA Kind of package: reel; tape Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RB520HS-30T15R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DSN0603-2,SOD962-2; SMD; 30V; 0.2A Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: DSN0603-2; SOD962-2 Max. forward voltage: 0.43V Leakage current: 0.3µA Kind of package: reel; tape Max. forward impulse current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
|
RB520CM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Case: SOD923 Max. forward voltage: 0.45V Leakage current: 0.5µA Kind of package: reel; tape Max. forward impulse current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RB520CS-30FHT2RA | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Case: SOD923 Max. forward voltage: 0.45V Leakage current: 0.5µA Kind of package: reel; tape Max. forward impulse current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RB520SM-40FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.55V Leakage current: 10µA Kind of package: reel; tape Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RB520VM-30FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SOD323F Max. forward voltage: 0.58V Leakage current: 1µA Kind of package: reel; tape Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
RB520VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Case: SOD323F Max. forward voltage: 0.55V Leakage current: 10µA Kind of package: reel; tape Max. forward impulse current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
RF05VYM1SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
на замовлення 3289 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
RF05VAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Load current: 0.5A Max. forward voltage: 0.98V Max. forward impulse current: 6A Max. off-state voltage: 200V Reverse recovery time: 25ns |
на замовлення 2550 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| RF05VYM2SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RF05VAM1STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
UMH9NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 1830 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
BZX84C3V3LYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BD00C0AWFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.5V Output voltage: 3...15V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±1% Number of channels: 1 Input voltage: 4...26.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BA50BC0WFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 5V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BA33BC0WFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.3V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RQ5C060BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -6A Gate charge: 19.2nC On-state resistance: 51mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RQ5C035BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -12A Drain current: -3.5A Gate charge: 6.5nC On-state resistance: 135mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RF6C055BCTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T Case: SOT363T Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -5.5A Gate charge: 15.2nC On-state resistance: 25.8mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Case: UMT3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar On-state resistance: 3.1Ω Power dissipation: 0.2W Drain current: 0.2A Pulsed drain current: 0.8A Gate-source voltage: ±12V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Case: VMT3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar On-state resistance: 12Ω Power dissipation: 0.15W Drain current: 0.25A Pulsed drain current: 1A Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Case: UMT3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.2nC On-state resistance: 4Ω Power dissipation: 0.2W Drain current: 0.2A Pulsed drain current: 0.8A Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BD2221G-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C Operating temperature: -40...85°C Active logical level: low Type of integrated circuit: power switch Kind of output: N-Channel On-state resistance: 0.21Ω Number of channels: 1 Supply voltage: 2.7...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Case: SSOP5 Mounting: SMD Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RGT16BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Case: TO252 Mounting: SMD Gate charge: 21nC Turn-on time: 27ns Turn-off time: 170ns Collector current: 8A Gate-emitter voltage: ±30V Pulsed collector current: 24A Power dissipation: 47W Collector-emitter voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RGT16NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Case: TO263 Mounting: SMD Gate charge: 21nC Turn-on time: 27ns Turn-off time: 170ns Collector current: 8A Gate-emitter voltage: ±30V Pulsed collector current: 24A Power dissipation: 47W Collector-emitter voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RGT16NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Case: LPDS Mounting: SMD Gate charge: 21nC Turn-on time: 27ns Turn-off time: 170ns Collector current: 8A Gate-emitter voltage: ±30V Pulsed collector current: 24A Power dissipation: 47W Collector-emitter voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
RB168MM100TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.4µA Max. forward voltage: 0.81V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 100V Semiconductor structure: single diode Case: SOD123F |
на замовлення 865 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| RSJ650N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 130A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
BU4327G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS Mounting: SMD Operating temperature: -40...125°C Maximum output current: 70mA Threshold on-voltage: 2.7V Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: CMOS Active logical level: low Case: SSOP5 Type of integrated circuit: supervisor circuit |
на замовлення 2292 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| BU4327FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Manufacturer series: BU43 Kind of RESET output: CMOS Case: VSOF5 Active logical level: low Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.7V Integrated circuit features: ±1% accuracy Kind of integrated circuit: voltage detector Type of integrated circuit: supervisor circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
1SS380VMFHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Case: SC90A; SOD323F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: switching Load current: 0.1A Max. load current: 225mA Max. forward impulse current: 0.4A Max. forward voltage: 1.2V Max. off-state voltage: 80V |
на замовлення 2050 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
1SS380VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Case: SC90A; SOD323F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: switching Load current: 0.1A Max. load current: 225mA Max. forward impulse current: 0.4A Max. forward voltage: 1.2V Max. off-state voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RS1E350BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8 Mounting: SMD On-state resistance: 2.5mΩ Drain current: 80A Power dissipation: 35W Drain-source voltage: 30V Pulsed drain current: 140A Case: HSOP8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 185nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RCJ700N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 70A; Idm: 140A; 297W; D2PAK Mounting: SMD On-state resistance: 87mΩ Drain current: 70A Power dissipation: 297W Drain-source voltage: 200V Pulsed drain current: 140A Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 125nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
RRH090P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Pulsed drain current: -36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| R6006JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Gate charge: 15.5nC On-state resistance: 936mΩ Drain current: 6A Pulsed drain current: 18A Gate-source voltage: ±30V Power dissipation: 86W Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| R6006KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Gate charge: 12nC On-state resistance: 1.6Ω Drain current: 6A Pulsed drain current: 18A Gate-source voltage: ±20V Power dissipation: 70W Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RF505BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward voltage: 1.7V Max. forward impulse current: 50A Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RF505BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward voltage: 1.7V Max. forward impulse current: 50A Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BD4942G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.2V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
RB160L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 70A Max. off-state voltage: 40V |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
SP8M21FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 45/-45V Drain current: 6/-4A Pulsed drain current: 16...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/65mΩ Mounting: SMD Gate charge: 15.4/20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
SP8M6FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5/-3.5A Pulsed drain current: 14...20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 82/165mΩ Mounting: SMD Gate charge: 3.9/5.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
SP8M8FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-4.5A Pulsed drain current: 18...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 47/90mΩ Mounting: SMD Gate charge: 7.2/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| QS8M51FRATR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/-1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| QS8M51TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/-1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| UMG3N-TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
FMG3AT148 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT25 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DTC143ZEBHZGTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
|
RB560VM-40FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape Leakage current: 40µA Load current: 0.5A Max. forward voltage: 0.64V Max. forward impulse current: 2A Max. off-state voltage: 40V Kind of package: reel; tape Case: SOD323F Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
|
BAV70HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
BU4927G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS Mounting: SMD Operating temperature: -40...105°C Maximum output current: 70mA Threshold on-voltage: 2.7V Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: CMOS Active logical level: low Case: SSOP5 Type of integrated circuit: supervisor circuit |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 +1 |
BD4925G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS Mounting: SMD Operating temperature: -40...105°C Maximum output current: 70mA Threshold on-voltage: 2.5V Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: CMOS Active logical level: low Case: SSOP5 Type of integrated circuit: supervisor circuit |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
BA90BC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2% Output voltage: 9V Voltage drop: 0.5V Number of channels: 1 Output current: 1A Tolerance: ±2% Input voltage: 3...16V Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Case: TO252-3 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...105°C |
на замовлення 1771 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
DTDG14GPT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
RBR2MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 80µA Max. forward voltage: 0.55V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 30A Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. |
| RB520CM-60T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.47V
Leakage current: 3µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.47V
Leakage current: 3µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
на замовлення 6228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.89 грн |
| 81+ | 4.86 грн |
| 100+ | 4.00 грн |
| 500+ | 3.50 грн |
| 503+ | 1.83 грн |
| 1382+ | 1.74 грн |
| RB520SM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| RB520VM-40FHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| RB520HS-30T15R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2,SOD962-2; SMD; 30V; 0.2A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: DSN0603-2; SOD962-2
Max. forward voltage: 0.43V
Leakage current: 0.3µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2,SOD962-2; SMD; 30V; 0.2A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: DSN0603-2; SOD962-2
Max. forward voltage: 0.43V
Leakage current: 0.3µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
товару немає в наявності
В кошику
од. на суму грн.
| RB520CM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
товару немає в наявності
В кошику
од. на суму грн.
| RB520CS-30FHT2RA |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
товару немає в наявності
В кошику
од. на суму грн.
| RB520SM-40FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| RB520VM-30FHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| RB520VM-40TE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| RF05VYM1SFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
на замовлення 3289 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.27 грн |
| 27+ | 14.74 грн |
| 32+ | 12.47 грн |
| 51+ | 7.81 грн |
| 100+ | 6.46 грн |
| 217+ | 4.26 грн |
| 597+ | 4.02 грн |
| 3000+ | 3.88 грн |
| RF05VAM2STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.58 грн |
| 34+ | 11.61 грн |
| 50+ | 8.86 грн |
| 100+ | 7.92 грн |
| 186+ | 4.94 грн |
| 510+ | 4.70 грн |
| RF05VYM2SFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| RF05VAM1STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| UMH9NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.20 грн |
| 36+ | 10.98 грн |
| 41+ | 9.57 грн |
| 58+ | 6.79 грн |
| 100+ | 5.97 грн |
| 260+ | 3.55 грн |
| 715+ | 3.36 грн |
| BZX84C3V3LYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| BD00C0AWFP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 3...15V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...26.5V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 3...15V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...26.5V
товару немає в наявності
В кошику
од. на суму грн.
| BA50BC0WFP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
товару немає в наявності
В кошику
од. на суму грн.
| BA33BC0WFP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
товару немає в наявності
В кошику
од. на суму грн.
| RQ5C060BCTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -6A
Gate charge: 19.2nC
On-state resistance: 51mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -6A
Gate charge: 19.2nC
On-state resistance: 51mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| RQ5C035BCTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
Gate charge: 6.5nC
On-state resistance: 135mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
Gate charge: 6.5nC
On-state resistance: 135mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| RF6C055BCTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T
Case: SOT363T
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -5.5A
Gate charge: 15.2nC
On-state resistance: 25.8mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T
Case: SOT363T
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -5.5A
Gate charge: 15.2nC
On-state resistance: 25.8mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| RJU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 3.1Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±12V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 3.1Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±12V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
| RSM002N06T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Case: VMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 12Ω
Power dissipation: 0.15W
Drain current: 0.25A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Case: VMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 12Ω
Power dissipation: 0.15W
Drain current: 0.25A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
| RHU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
On-state resistance: 4Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
On-state resistance: 4Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
| BD2221G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Operating temperature: -40...85°C
Active logical level: low
Type of integrated circuit: power switch
Kind of output: N-Channel
On-state resistance: 0.21Ω
Number of channels: 1
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Case: SSOP5
Mounting: SMD
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Operating temperature: -40...85°C
Active logical level: low
Type of integrated circuit: power switch
Kind of output: N-Channel
On-state resistance: 0.21Ω
Number of channels: 1
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Case: SSOP5
Mounting: SMD
Kind of integrated circuit: high-side
товару немає в наявності
В кошику
од. на суму грн.
| RSQ020N03HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RGT16BM65DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO252
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO252
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| RGT16NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| RGT16NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: LPDS
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: LPDS
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| RB168MM100TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.4µA
Max. forward voltage: 0.81V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.4µA
Max. forward voltage: 0.81V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SOD123F
на замовлення 865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.25 грн |
| 19+ | 21.09 грн |
| 50+ | 15.21 грн |
| 100+ | 13.10 грн |
| 151+ | 6.12 грн |
| 413+ | 5.80 грн |
| RSJ650N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
товару немає в наявності
В кошику
од. на суму грн.
| BU4327G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 70mA
Threshold on-voltage: 2.7V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 70mA
Threshold on-voltage: 2.7V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
на замовлення 2292 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.11 грн |
| 32+ | 12.62 грн |
| 100+ | 10.51 грн |
| 118+ | 7.76 грн |
| 325+ | 7.37 грн |
| BU4327FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU43
Kind of RESET output: CMOS
Case: VSOF5
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Kind of integrated circuit: voltage detector
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU43
Kind of RESET output: CMOS
Case: VSOF5
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Kind of integrated circuit: voltage detector
Type of integrated circuit: supervisor circuit
товару немає в наявності
В кошику
од. на суму грн.
| 1SS380VMFHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.1A
Max. load current: 225mA
Max. forward impulse current: 0.4A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.1A
Max. load current: 225mA
Max. forward impulse current: 0.4A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
на замовлення 2050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.58 грн |
| 37+ | 10.82 грн |
| 100+ | 6.45 грн |
| 233+ | 3.96 грн |
| 641+ | 3.74 грн |
| 1SS380VMTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.1A
Max. load current: 225mA
Max. forward impulse current: 0.4A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: switching
Load current: 0.1A
Max. load current: 225mA
Max. forward impulse current: 0.4A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
товару немає в наявності
В кошику
од. на суму грн.
| RS1E350BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 80A
Power dissipation: 35W
Drain-source voltage: 30V
Pulsed drain current: 140A
Case: HSOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 185nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 80A
Power dissipation: 35W
Drain-source voltage: 30V
Pulsed drain current: 140A
Case: HSOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 185nC
товару немає в наявності
В кошику
од. на суму грн.
| RCJ700N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; Idm: 140A; 297W; D2PAK
Mounting: SMD
On-state resistance: 87mΩ
Drain current: 70A
Power dissipation: 297W
Drain-source voltage: 200V
Pulsed drain current: 140A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 125nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; Idm: 140A; 297W; D2PAK
Mounting: SMD
On-state resistance: 87mΩ
Drain current: 70A
Power dissipation: 297W
Drain-source voltage: 200V
Pulsed drain current: 140A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 125nC
товару немає в наявності
В кошику
од. на суму грн.
| RRH090P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| R6006JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 15.5nC
On-state resistance: 936mΩ
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 86W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 15.5nC
On-state resistance: 936mΩ
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 86W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| R6006KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 12nC
On-state resistance: 1.6Ω
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 12nC
On-state resistance: 1.6Ω
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| RF505BM6SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Reverse recovery time: 30ns
товару немає в наявності
В кошику
од. на суму грн.
| RF505BM6STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Reverse recovery time: 30ns
товару немає в наявності
В кошику
од. на суму грн.
| BD4942G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
товару немає в наявності
В кошику
од. на суму грн.
| RB160L-40TE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 70A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 70A
Max. off-state voltage: 40V
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 32.93 грн |
| 19+ | 21.17 грн |
| 100+ | 12.39 грн |
| 110+ | 8.39 грн |
| 303+ | 7.92 грн |
| 1000+ | 7.76 грн |
| SP8M21FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SP8M6FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SP8M8FRATB |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| QS8M51FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| QS8M51TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| UMG3N-TR |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
товару немає в наявності
В кошику
од. на суму грн.
| FMG3AT148 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
товару немає в наявності
В кошику
од. на суму грн.
| DTC143ZEBHZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
товару немає в наявності
В кошику
од. на суму грн.
| RB560VM-40FHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape
Leakage current: 40µA
Load current: 0.5A
Max. forward voltage: 0.64V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape
Leakage current: 40µA
Load current: 0.5A
Max. forward voltage: 0.64V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| RJ1P12BBDTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BAV70HYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.45A
товару немає в наявності
В кошику
од. на суму грн.
| BU4927G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 70mA
Threshold on-voltage: 2.7V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 70mA
Threshold on-voltage: 2.7V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.91 грн |
| 34+ | 11.68 грн |
| 100+ | 8.86 грн |
| 141+ | 6.51 грн |
| 386+ | 6.19 грн |
| BD4925G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 70mA
Threshold on-voltage: 2.5V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...105°C
Maximum output current: 70mA
Threshold on-voltage: 2.5V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.03 грн |
| BA90BC0FP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2%
Output voltage: 9V
Voltage drop: 0.5V
Number of channels: 1
Output current: 1A
Tolerance: ±2%
Input voltage: 3...16V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Case: TO252-3
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2%
Output voltage: 9V
Voltage drop: 0.5V
Number of channels: 1
Output current: 1A
Tolerance: ±2%
Input voltage: 3...16V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Case: TO252-3
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
на замовлення 1771 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.83 грн |
| 10+ | 60.22 грн |
| 25+ | 54.66 грн |
| 27+ | 34.82 грн |
| 73+ | 32.93 грн |
| DTDG14GPT100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| RBR2MM40BTFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Case: SOD123F
товару немає в наявності
В кошику
од. на суму грн.