Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104122) > Сторінка 1735 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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RU1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT323F Gate-source voltage: ±8V On-state resistance: 3.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2377 шт: термін постачання 14-30 дні (днів) |
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 456 шт: термін постачання 14-30 дні (днів) |
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UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2647 шт: термін постачання 14-30 дні (днів) |
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13nC On-state resistance: 12.4mΩ Drain current: 10A Pulsed drain current: 36A Gate-source voltage: ±12V Drain-source voltage: 30V |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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RF4E080GNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.8nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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RF4E080BNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S Power dissipation: 2W Kind of package: reel; tape Case: DFN2020-8S Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 14.5nC On-state resistance: 17.6mΩ Drain current: 8A Pulsed drain current: 32A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2953 шт: термін постачання 14-30 дні (днів) |
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SCS212AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Case: TO220AC Mounting: THT Max. forward voltage: 1.55V Load current: 12A Max. forward impulse current: 170A Max. load current: 52A Power dissipation: 93W Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS112AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 48A Max. forward impulse current: 167A Power dissipation: 93W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SCT3120ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Case: TO247 Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Technology: SiC Polarisation: unipolar Pulsed drain current: 52A Drain current: 21A Drain-source voltage: 650V Gate-source voltage: -4...22V Gate charge: 38nC On-state resistance: 156mΩ Power dissipation: 103W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SCS220AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W Case: TO220FP-2 Mounting: THT Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 20A Max. forward voltage: 1.55V Max. forward impulse current: 260A Power dissipation: 40W Max. load current: 41A Max. off-state voltage: 650V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA10393F-E2 | ROHM SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA Mounting: SMT Operating temperature: -40...85°C Type of integrated circuit: comparator Kind of output: open collector Kind of package: reel; tape Case: SO8 Kind of comparator: universal Input offset current: 50nA Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
на замовлення 2046 шт: термін постачання 14-30 дні (днів) |
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| US6X7TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.4W Case: SOT363T Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RQ3E120ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8 Kind of package: reel; tape Mounting: SMD Pulsed drain current: -48A Drain current: -39A Drain-source voltage: -30V Gate charge: 62nC On-state resistance: 11.3mΩ Power dissipation: 20W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Case: HSMT8 Type of transistor: P-MOSFET |
на замовлення 2941 шт: термін постачання 14-30 дні (днів) |
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RFC02MM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD123F Reverse recovery time: 35ns Load current: 0.2A Max. forward voltage: 0.95V Max. forward impulse current: 10A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS215AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 15A Max. forward voltage: 1.55V Power dissipation: 39W Max. forward impulse current: 200A Max. off-state voltage: 650V Max. load current: 36A Kind of package: tube Case: TO220FP-2 Technology: SiC Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SCS315AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 0.3mA Load current: 15A Max. forward voltage: 1.71V Power dissipation: 39W Max. forward impulse current: 410A Max. off-state voltage: 650V Max. load current: 39A Kind of package: tube Case: TO220FP-2 Technology: SiC Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCS210AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Power dissipation: 34W Case: TO220FP-2 Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 10A Max. forward voltage: 1.55V Max. load current: 28A Max. off-state voltage: 650V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCS310AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Power dissipation: 34W Case: TO220FP-2 Technology: SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 0.2mA Load current: 10A Max. forward voltage: 1.71V Max. load current: 30A Max. off-state voltage: 650V Max. forward impulse current: 0.3kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain current: -78A Drain-source voltage: -40V Gate charge: 130nC On-state resistance: 6.5mΩ Power dissipation: 40W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 104A Drain current: 80A Drain-source voltage: 40V Gate charge: 44nC On-state resistance: 4.4mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 48A Drain current: 34A Drain-source voltage: 40V Gate charge: 9.4nC On-state resistance: 20.7mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain current: 43A Drain-source voltage: 40V Gate charge: 15nC On-state resistance: 13.3mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 72A Drain current: 57A Drain-source voltage: 40V Gate charge: 19.5nC On-state resistance: 9.2mΩ Power dissipation: 30W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 120A Drain current: 80A Drain-source voltage: 40V Gate charge: 56.8nC On-state resistance: 3mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| SML-P13FTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 18mcd LED current: 20mA Wavelength: 566nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SML-P13PTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0402; 10mcd; 20mA; 560nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 10mcd LED current: 20mA Wavelength: 560nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SML-P12M2TT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0402; 25mcd; 20mA; 576nm; Lens: transparent Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Luminosity: 25mcd LED current: 20mA Wavelength: 576nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB160L-40TE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 736 шт: термін постачання 14-30 дні (днів) |
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| EMX1GT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
| EMX18T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT563 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EMX1FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EMX1T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RBR2MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 80µA Max. forward voltage: 0.55V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RBR3MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.1mA Max. forward voltage: 0.58V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RBS3LAM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.6mA Max. forward voltage: 0.45V Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 60A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RBR2MM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 80µA Max. forward voltage: 0.55V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR3MM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 0.1mA Max. forward voltage: 0.58V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 30A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RHP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 670 шт: термін постачання 14-30 дні (днів) |
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DTC123JKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123JCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123JCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DTC123JMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC123JU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DTC123YEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||
| DTC123YETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
DTC123YU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RV1C002UNT2CL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.15A Pulsed drain current: 0.6A Power dissipation: 0.1W Case: X2-DFN0806-3 Gate-source voltage: ±8V On-state resistance: 11.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EMD6FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Kind of package: reel; tape Type of transistor: NPN / PNP Kind of transistor: BRT; complementary pair Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 100...600 Base resistor: 4.7kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EMD6T2R | ROHM SEMICONDUCTOR |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT563 Kind of package: reel; tape Type of transistor: NPN / PNP Kind of transistor: BRT; complementary pair Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 100...600 Base resistor: 4.7kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
SCS220AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube Technology: SiC Power dissipation: 136W Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 1.55V Load current: 20A Max. load current: 81A Max. forward impulse current: 260A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SCS220AEC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube Technology: SiC Power dissipation: 130W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 1.55V Load current: 20A Max. load current: 81A Max. forward impulse current: 260A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DAP202KT146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V Features of semiconductor devices: fast switching Type of diode: switching Mounting: SMD Capacitance: 3.5pF Reverse recovery time: 4ns Leakage current: 0.1µA Power dissipation: 0.2W Load current: 0.3A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. off-state voltage: 80V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC59; SOT346 |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
|
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|
RB520SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.58V Leakage current: 1µA Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RB520SM-40FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 10µA Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BD5332G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 3.2V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| BD5333G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 3.3V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
DTC113ZCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTC113ZCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTC113ZU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RGTH40TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 72W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 40nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 141ns Turn-on time: 47ns |
товару немає в наявності |
В кошику од. на суму грн. |
| RU1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±8V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±8V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 43+ | 9.89 грн |
| 65+ | 6.43 грн |
| 100+ | 5.29 грн |
| 500+ | 3.53 грн |
| 1000+ | 3.12 грн |
| RE1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 456 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.58 грн |
| 34+ | 12.46 грн |
| 100+ | 7.29 грн |
| UM6K33NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.74 грн |
| 23+ | 18.28 грн |
| 50+ | 12.22 грн |
| 100+ | 10.22 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.32 грн |
| 1500+ | 6.07 грн |
| RF4E100AJTCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 12.4mΩ
Drain current: 10A
Pulsed drain current: 36A
Gate-source voltage: ±12V
Drain-source voltage: 30V
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.17 грн |
| 10+ | 53.93 грн |
| 100+ | 35.90 грн |
| 500+ | 28.42 грн |
| 1000+ | 26.01 грн |
| RF4E080GNTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.8nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 16+ | 27.67 грн |
| 100+ | 18.28 грн |
| 250+ | 16.20 грн |
| RF4E080BNTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 32A; 2W; DFN2020-8S
Power dissipation: 2W
Kind of package: reel; tape
Case: DFN2020-8S
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 14.5nC
On-state resistance: 17.6mΩ
Drain current: 8A
Pulsed drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2953 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.53 грн |
| 12+ | 36.06 грн |
| 100+ | 25.43 грн |
| 500+ | 20.19 грн |
| 1000+ | 18.61 грн |
| SCS212AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Max. forward voltage: 1.55V
Load current: 12A
Max. forward impulse current: 170A
Max. load current: 52A
Power dissipation: 93W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; 93W; tube
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Max. forward voltage: 1.55V
Load current: 12A
Max. forward impulse current: 170A
Max. load current: 52A
Power dissipation: 93W
Max. off-state voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.
| SCS112AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 48A
Max. forward impulse current: 167A
Power dissipation: 93W
Kind of package: tube
Heatsink thickness: max. 1.27mm
товару немає в наявності
В кошику
од. на суму грн.
| SCT3120ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Case: TO247
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Pulsed drain current: 52A
Drain current: 21A
Drain-source voltage: 650V
Gate-source voltage: -4...22V
Gate charge: 38nC
On-state resistance: 156mΩ
Power dissipation: 103W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Case: TO247
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Technology: SiC
Polarisation: unipolar
Pulsed drain current: 52A
Drain current: 21A
Drain-source voltage: 650V
Gate-source voltage: -4...22V
Gate charge: 38nC
On-state resistance: 156mΩ
Power dissipation: 103W
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCS220AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Case: TO220FP-2
Mounting: THT
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.55V
Max. forward impulse current: 260A
Power dissipation: 40W
Max. load current: 41A
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 40W
Case: TO220FP-2
Mounting: THT
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 20A
Max. forward voltage: 1.55V
Max. forward impulse current: 260A
Power dissipation: 40W
Max. load current: 41A
Max. off-state voltage: 650V
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BA10393F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Kind of package: reel; tape
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Kind of package: reel; tape
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
на замовлення 2046 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.22 грн |
| 100+ | 24.26 грн |
| US6X7TR |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.4W
Case: SOT363T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; complementary pair; 12V; 1.5A; 400mW
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.4W
Case: SOT363T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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| RQ3E120ATTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -48A
Drain current: -39A
Drain-source voltage: -30V
Gate charge: 62nC
On-state resistance: 11.3mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: HSMT8
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39A; Idm: -48A; 20W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -48A
Drain current: -39A
Drain-source voltage: -30V
Gate charge: 62nC
On-state resistance: 11.3mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: HSMT8
Type of transistor: P-MOSFET
на замовлення 2941 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 78.75 грн |
| 10+ | 45.45 грн |
| 100+ | 30.16 грн |
| RFC02MM2STFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123F
Reverse recovery time: 35ns
Load current: 0.2A
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Max. off-state voltage: 200V
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| SCS215AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 15A
Max. forward voltage: 1.55V
Power dissipation: 39W
Max. forward impulse current: 200A
Max. off-state voltage: 650V
Max. load current: 36A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
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| SCS315AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Load current: 15A
Max. forward voltage: 1.71V
Power dissipation: 39W
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Max. load current: 39A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220FP-2; 39W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Load current: 15A
Max. forward voltage: 1.71V
Power dissipation: 39W
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Max. load current: 39A
Kind of package: tube
Case: TO220FP-2
Technology: SiC
Mounting: THT
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| SCS210AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. forward voltage: 1.55V
Max. load current: 28A
Max. off-state voltage: 650V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. forward voltage: 1.55V
Max. load current: 28A
Max. off-state voltage: 650V
Max. forward impulse current: 150A
Kind of package: tube
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| SCS310AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 0.2mA
Load current: 10A
Max. forward voltage: 1.71V
Max. load current: 30A
Max. off-state voltage: 650V
Max. forward impulse current: 0.3kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Power dissipation: 34W
Case: TO220FP-2
Technology: SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Leakage current: 0.2mA
Load current: 10A
Max. forward voltage: 1.71V
Max. load current: 30A
Max. off-state voltage: 650V
Max. forward impulse current: 0.3kA
Kind of package: tube
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| RS1G201ATTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| RS1G260MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| RS1G120MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
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| RS1G150MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
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| RS1G180MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
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| RS1G300GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| SML-P13FTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 18mcd
LED current: 20mA
Wavelength: 566nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 18mcd; 20mA; 566nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 18mcd
LED current: 20mA
Wavelength: 566nm
Front: flat
LED lens: transparent
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| SML-P13PTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 10mcd; 20mA; 560nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 10mcd
LED current: 20mA
Wavelength: 560nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 10mcd; 20mA; 560nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 10mcd
LED current: 20mA
Wavelength: 560nm
Front: flat
LED lens: transparent
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| SML-P12M2TT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 25mcd; 20mA; 576nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 25mcd
LED current: 20mA
Wavelength: 576nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 25mcd; 20mA; 576nm; Lens: transparent
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Luminosity: 25mcd
LED current: 20mA
Wavelength: 576nm
Front: flat
LED lens: transparent
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| RB160L-40TE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 736 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 34.90 грн |
| 20+ | 20.94 грн |
| 100+ | 11.72 грн |
| 500+ | 8.31 грн |
| EMX1GT2R |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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Мінімальне замовлення: 5 шт
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| EMX18T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 12V; 0.5A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT563
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
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| EMX1FHAT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| EMX1T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| RBR2MM40BTFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| RBR3MM40BTFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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| RBS3LAM40BTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.6mA
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 60A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 20V; 3A; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.6mA
Max. forward voltage: 0.45V
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 60A
Semiconductor structure: single diode
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| RBR2MM40BTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 80µA
Max. forward voltage: 0.55V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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| RBR3MM40BTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Semiconductor structure: single diode
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| RHP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 670 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.06 грн |
| 19+ | 21.94 грн |
| 50+ | 19.44 грн |
| 250+ | 17.53 грн |
| DTC123JKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123JU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| DTC123YEFRATL |
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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Мінімальне замовлення: 20 шт
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| DTC123YETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| DTC123YU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| RV1C002UNT2CL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.15A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.15A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| EMD6FHAT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
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| EMD6T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Type of transistor: NPN / PNP
Kind of transistor: BRT; complementary pair
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100...600
Base resistor: 4.7kΩ
Frequency: 250MHz
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| SCS220AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube
Technology: SiC
Power dissipation: 136W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Load current: 20A
Max. load current: 81A
Max. forward impulse current: 260A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; 136W; tube
Technology: SiC
Power dissipation: 136W
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Load current: 20A
Max. load current: 81A
Max. forward impulse current: 260A
Max. off-state voltage: 650V
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| SCS220AEC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Technology: SiC
Power dissipation: 130W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Load current: 20A
Max. load current: 81A
Max. forward impulse current: 260A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; 130W; tube
Technology: SiC
Power dissipation: 130W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Load current: 20A
Max. load current: 81A
Max. forward impulse current: 260A
Max. off-state voltage: 650V
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| DAP202KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Features of semiconductor devices: fast switching
Type of diode: switching
Mounting: SMD
Capacitance: 3.5pF
Reverse recovery time: 4ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC59; SOT346
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.3A; 4ns; SC59,SOT346; Ufmax: 1.2V
Features of semiconductor devices: fast switching
Type of diode: switching
Mounting: SMD
Capacitance: 3.5pF
Reverse recovery time: 4ns
Leakage current: 0.1µA
Power dissipation: 0.2W
Load current: 0.3A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC59; SOT346
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.42 грн |
| 37+ | 11.63 грн |
| RB520SM-30T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Leakage current: 1µA
Max. forward impulse current: 1A
Kind of package: reel; tape
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| RB520SM-40FHT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
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| BD5332G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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Мінімальне замовлення: 3000 шт
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| BD5333G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.3V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 3.3V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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Мінімальне замовлення: 3000 шт
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| DTC113ZCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| DTC113ZCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| DTC113ZU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| RGTH40TS65DGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 141ns
Turn-on time: 47ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 72W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 141ns
Turn-on time: 47ns
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