Результат пошуку "40n120" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IGW40N120H3FKSA1 | Infineon |
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на замовлення 240 шт: термін постачання 14-28 дні (днів) |
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| NGTB40N120FL2WAG | ON Semiconductor |
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на замовлення 82 шт: термін постачання 14-28 дні (днів) |
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| NGTB40N120IHRWG | ON Semiconductor |
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на замовлення 7725 шт: термін постачання 14-28 дні (днів) |
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| NGTB40N120S3WG | ON Semiconductor |
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на замовлення 9034 шт: термін постачання 14-28 дні (днів) |
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| NGTG40N120FL2WG | ON Semiconductor |
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на замовлення 260 шт: термін постачання 14-28 дні (днів) |
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| NTBG040N120SC1 | ON Semiconductor |
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на замовлення 365 шт: термін постачання 14-28 дні (днів) |
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| NVBG040N120SC1 | ON Semiconductor |
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на замовлення 135 шт: термін постачання 14-28 дні (днів) |
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| NVH4L040N120SC1 | ON Semiconductor |
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на замовлення 91 шт: термін постачання 14-28 дні (днів) |
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| NVHL040N120SC1 | ON Semiconductor |
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на замовлення 290 шт: термін постачання 14-28 дні (днів) |
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| SDH40N120P | SW | 05+ |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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7MBI40N-120 Код товару: 29318 |
Транзистори > IGBT |
товар відсутній
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FGH40N120 Код товару: 179924 |
Транзистори > IGBT |
товар відсутній
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FGH40N120ANTU Код товару: 165183 |
Різні комплектуючі > Різні комплектуючі 3 |
товар відсутній
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FGL40N120AND Код товару: 94242 |
Транзистори > IGBT |
товар відсутній
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FGL40N120ANDTU Код товару: 58535 |
FAIR |
Транзистори > IGBT Корпус: TO-264 Vces: 1200 V Vce: 2,6 V Ic 25: 64 A Ic 100: 40 A Pd 25: 200 W td(on)/td(off) 100-150 град: 15/110 |
товар відсутній
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FGL40N120ANTU Код товару: 188179 |
Транзистори > Польові N-канальні |
товар відсутній
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IGW40N120H3 Код товару: 51727 |
Різні комплектуючі > Різні комплектуючі 2 |
товар відсутній
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IHW40N120R5XKSA1 Код товару: 175988 |
Транзистори > IGBT |
товар відсутній
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IKW40N120CS6XKSA1 Код товару: 193315 |
Різні комплектуючі > Різні комплектуючі 1 |
товар відсутній
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IKW40N120H3 Код товару: 153177 |
Транзистори > IGBT |
товар відсутній
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IKW40N120H3FKSA1 Код товару: 144428 |
Транзистори > IGBT |
товар відсутній
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IKW40N120T2 Код товару: 150870 |
Транзистори > IGBT |
товар відсутній
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IKW40N120T2 Код товару: 73806 |
Транзистори > IGBT |
товар відсутній
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IXGH40N120C3D1 Код товару: 182236 |
Різні комплектуючі > Різні комплектуючі 1 |
товар відсутній
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NGTB40N120FL2WAG Код товару: 171155 |
Транзистори > Польові N-канальні |
товар відсутній
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NGTB40N120FL2WG Код товару: 165841 |
Транзистори > IGBT |
товар відсутній
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NGTB40N120FL3WG Код товару: 133614 |
Транзистори > IGBT |
товар відсутній
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NGTB40N120L3WG Код товару: 166585 |
Транзистори > IGBT |
товар відсутній
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NGTB40N120SWG Код товару: 162412 |
Різні комплектуючі > Різні комплектуючі 3 |
товар відсутній
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NVBG040N120SC1 Код товару: 179416 |
Транзистори > Польові N-канальні |
товар відсутній
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NVHL040N120SC1 Код товару: 190306 |
Різні комплектуючі > Різні комплектуючі 1 |
товар відсутній
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| 5240-N-120 | RAF Electronic Hardware | Screws & Fasteners |
товар відсутній |
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BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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| BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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| BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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DACMH40N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Case: HB9434 Semiconductor structure: transistor/transistor Operating temperature: -55...150°C Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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DACMH40N1200 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Case: HB9434 Semiconductor structure: transistor/transistor Operating temperature: -55...150°C Electrical mounting: screw Topology: MOSFET half-bridge Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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IGW40N120H3FKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 483000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 310nC Kind of package: tube Turn-off time: 440ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 7-14 дні (днів) |
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| IKQ140N120CH7XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 175A 962W 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IKQ40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Kind of package: tube Manufacturer series: H3 Turn-on time: 76ns Turn-off time: 331ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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IKQ40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Kind of package: tube Manufacturer series: H3 Turn-on time: 76ns Turn-off time: 331ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKQ40N120CH3XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 500000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IKQ40N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 133W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Kind of package: tube Turn-on time: 75ns Turn-off time: 379ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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IKQ40N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 133W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Kind of package: tube Turn-on time: 75ns Turn-off time: 379ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKQ40N120CT2XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 500000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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| IKW40N120CH7XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 82A 330W 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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| IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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| IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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| IKW40N120CS7XKSA1 | Infineon Technologies |
SP005415716 |
товар відсутній |
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IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 185nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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IKW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 185nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKW40N120H3FKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 483000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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| IKY140N120CH7XKSA1 | Infineon Technologies |
SP005560949 |
товар відсутній |
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| IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Manufacturer series: H3 Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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| IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Manufacturer series: H3 Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKY40N120CH3XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 500000mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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| IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Turn-on time: 54ns Turn-off time: 342ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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| IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Turn-on time: 54ns Turn-off time: 342ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
| FGL40N120ANDTU Код товару: 58535 |
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Виробник: FAIR
Транзистори > IGBT
Корпус: TO-264
Vces: 1200 V
Vce: 2,6 V
Ic 25: 64 A
Ic 100: 40 A
Pd 25: 200 W
td(on)/td(off) 100-150 град: 15/110
Транзистори > IGBT
Корпус: TO-264
Vces: 1200 V
Vce: 2,6 V
Ic 25: 64 A
Ic 100: 40 A
Pd 25: 200 W
td(on)/td(off) 100-150 град: 15/110
товар відсутній
| BGH40N120HF |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| BGH40N120HF |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| BGH40N120HS1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| BGH40N120HS1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| DACMH40N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| DACMH40N1200 |
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; HB9434; screw; SiC
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Case: HB9434
Semiconductor structure: transistor/transistor
Operating temperature: -55...150°C
Electrical mounting: screw
Topology: MOSFET half-bridge
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| IGW40N120H3FKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 80A 483000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 483000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| IHW40N120R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.22 грн |
| 3+ | 357.84 грн |
| 4+ | 263.21 грн |
| 11+ | 249.1 грн |
| IKQ140N120CH7XKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 175A 962W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 175A 962W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| IKQ40N120CH3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKQ40N120CH3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKQ40N120CH3XKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 80A 500000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 500000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| IKQ40N120CT2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 133W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 133W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKQ40N120CT2XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 133W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 133W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKQ40N120CT2XKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 80A 500000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 500000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| IKW40N120CH7XKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 82A 330W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 82A 330W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| IKW40N120CS7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKW40N120CS7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 179W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.5µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKW40N120H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKW40N120H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKW40N120H3FKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 80A 483000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 483000mW Automotive 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| IKY40N120CH3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKY40N120CH3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| IKY40N120CH3XKSA1 |
|
Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 80A 500000mW 4-Pin(4+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 80A 500000mW 4-Pin(4+Tab) TO-247 Tube
товар відсутній
| IKY40N120CS6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKY40N120CS6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній