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TLP124F TLP124F Toshiba Semiconductor and Storage TLP124.pdf Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Tube
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TC74LCX16244ELF TC74LCX16244ELF Toshiba Semiconductor and Storage Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
на замовлення 1481 шт:
термін постачання 21-31 дні (днів)
3+158.37 грн
10+95.26 грн
25+80.37 грн
100+59.58 грн
250+51.78 грн
500+46.97 грн
Мінімальне замовлення: 3
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TLP126TPRF TLP126TPRF Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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CMS01(TE12R,Q) CMS01(TE12R,Q) Toshiba Semiconductor and Storage CLS01.pdf Description: DIODE SCHOTTKY 30V 3A MFLAT
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TLP626-4(F) TLP626-4(F) Toshiba Semiconductor and Storage TLP626-2.pdf Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP250(TP1,F) TLP250(TP1,F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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TLP250(TP1,F) TLP250(TP1,F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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4N25A(SHORT,F) 4N25A(SHORT,F) Toshiba Semiconductor and Storage 4N25,25A,26,27,28%20Short.pdf Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
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TLP2200F TLP2200F Toshiba Semiconductor and Storage Art-TLP2200.jpg Description: OPTOISO 2.5KV TRI-STATE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 2.5MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 35ns, 20ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP350(F) TLP350(F) Toshiba Semiconductor and Storage TLP350_datasheet_en_20171018.pdf?did=6217&prodName=TLP350 Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: UR
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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TLP504A(F) TLP504A(F) Toshiba Semiconductor and Storage TLP504A%2C-2.pdf description Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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TLP525GF TLP525GF Toshiba Semiconductor and Storage docget.jsp?did=16937&prodName=TLP525G Description: OPTOISOLATOR 2.5KV TRIAC 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Current - Hold (Ih): 200µA (Typ)
Supplier Device Package: 4-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Last Time Buy
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 28919 шт:
термін постачання 21-31 дні (днів)
4+87.54 грн
10+53.18 грн
100+39.39 грн
500+33.97 грн
1000+27.97 грн
2000+26.57 грн
5000+25.55 грн
10000+24.96 грн
25000+24.57 грн
Мінімальне замовлення: 4
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TLP557(F) TLP557(F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV TRANS INVERTR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Power Transistor Driver
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 5V ~ 13V
Input Type: DC
Current - Output / Channel: 320mA
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 2kV/µs
Propagation Delay tpLH / tpHL (Max): 5µs, 5µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Forward (Vf) (Typ): 1.55 V
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TLP558(F) TLP558(F) Toshiba Semiconductor and Storage Art-TLP558.jpg Description: OPTOISO 2.5KV TRI-STATE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 35ns, 20ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 40 mA
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TLP627(TP1,F) TLP627(TP1,F) Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP632(F) TLP632(F) Toshiba Semiconductor and Storage TLP631_TLP632_20170517.pdf Description: OPTOISOLATR 5KV TRANSISTOR 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP731(D4-GR,F) TLP731(D4-GR,F) Toshiba Semiconductor and Storage 4N25-withBaseConn-v1.jpg Description: OPTOISO 4KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP627(TP1,F) TLP627(TP1,F) Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP280-4(GB-TP,J,F TLP280-4(GB-TP,J,F Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 4CH TRANS 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP350(TP1,F) TLP350(TP1,F) Toshiba Semiconductor and Storage TLP350_datasheet_en_20171018.pdf?did=6217&prodName=TLP350 Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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LTA057A340F LTA057A340F Toshiba Semiconductor and Storage LTA057A340F.pdf Description: LCD 5.7INCH 320X240 QVGA
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: LED - White
Interface: Parallel, 18-Bit (RGB)
Viewing Area: 115.20mm W x 86.40mm H
Dot Pixels: 320 x 240 (QVGA)
Diagonal Screen Size: 5.7" (144.78mm)
Graphics Color: Red, Green, Blue (RGB)
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LTA070A321F LTA070A321F Toshiba Semiconductor and Storage LTA070A321F.pdf Description: LCD 7INCH 800X480 WVGA TOUCH
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: CCFL
Interface: Parallel, 18-Bit (RGB)
Viewing Area: 152.40mm W x 91.44mm H
Dot Pixels: 800 x 480 (WVGA)
Diagonal Screen Size: 7" (177.80mm)
Graphics Color: Red, Green, Blue (RGB)
Touchscreen: Resistive
Part Status: Discontinued at Digi-Key
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LTA085C184F LTA085C184F Toshiba Semiconductor and Storage LTA085C184F.pdf Description: LCD 8.5INCH 800X480 WVGA TOUCH
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: CCFL
Interface: Parallel, 18-Bit (RGB)
Viewing Area: 184.80mm W x 110.88mm H
Dot Pixels: 800 x 480 (WVGA)
Diagonal Screen Size: 8.5" (215.90mm)
Graphics Color: Red, Green, Blue (RGB)
Touchscreen: Resistive
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LTD089EXWS LTD089EXWS Toshiba Semiconductor and Storage LTD089EXWS.pdf Description: LCD 8.9INCH 1280X768WXGA TRANSFL
Packaging: Box
Display Type: TFT - Color
Display Mode: Transflective
Backlight: LED - White
Interface: LVDS
Viewing Area: 193.90mm W x 116.40mm H
Dot Pixels: 1280 x 768
Diagonal Screen Size: 8.9" (226.06mm)
Graphics Color: Red, Green, Blue (RGB)
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TFD58W26MW TFD58W26MW Toshiba Semiconductor and Storage TFD58W26MW.pdf Description: LCD 5.8INCH 400X234 WQVGA
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: CCFL
Interface: Composite
Viewing Area: 127.20mm W x 71.80mm H
Dot Pixels: 400 x 234
Diagonal Screen Size: 5.8" (147.32mm)
Graphics Color: Red, Green, Blue (RGB)
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2SK1381(F) 2SK1381(F) Toshiba Semiconductor and Storage 2SK1381.pdf Description: MOSFET N-CH 100V 50A TO-3PN
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2SK2267(Q) Toshiba Semiconductor and Storage 2SK2267.pdf Description: MOSFET N-CH 60V 60A TO-3P(L)
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2SK2615(TE12L,F) 2SK2615(TE12L,F) Toshiba Semiconductor and Storage 2SK2615.pdf Description: MOSFET N-CH 60V 2A PW-MINI
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2SK2719(F) 2SK2719(F) Toshiba Semiconductor and Storage 2SK2719.pdf Description: MOSFET N-CH 900V 3A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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2SK2847(F) 2SK2847(F) Toshiba Semiconductor and Storage 2SK2847.pdf Description: MOSFET N-CH 900V 8A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)IS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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2SK2916(F) 2SK2916(F) Toshiba Semiconductor and Storage 2SK2916_Rev2009_DS.pdf Description: MOSFET N-CH 500V 14A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)IS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
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2SK2917(F) 2SK2917(F) Toshiba Semiconductor and Storage 2SK2917DS.pdf Description: MOSFET N-CH 500V 18A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)IS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 10 V
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2SK2964(TE12L,F) 2SK2964(TE12L,F) Toshiba Semiconductor and Storage 2SK2964.pdf Description: MOSFET N-CH 30V 2A PW-MINI
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2SK2967(F) 2SK2967(F) Toshiba Semiconductor and Storage 2sk2967.pdf Description: MOSFET N-CH 250V 30A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
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2SK2991(TE24L,Q) 2SK2991(TE24L,Q) Toshiba Semiconductor and Storage 2SK2991DS.pdf Description: MOSFET N-CH 500V 5A TO220SM
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2SK2993(TE24L,Q) 2SK2993(TE24L,Q) Toshiba Semiconductor and Storage 2SK2993.pdf Description: MOSFET N-CH 250V 20A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
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2SK2995(F) 2SK2995(F) Toshiba Semiconductor and Storage 2SK2995.pdf Description: MOSFET N-CH 250V 30A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-3P(N)IS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
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2SK3017(F) 2SK3017(F) Toshiba Semiconductor and Storage docget.jsp?did=15710&prodName=2SK3017 Description: MOSFET N-CH 900V 8.5A TO-3PN
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2SK3068(TE24L,Q) 2SK3068(TE24L,Q) Toshiba Semiconductor and Storage 2sk3068.pdf Description: MOSFET N-CH 500V 12A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
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2SK3127(TE24L,Q) 2SK3127(TE24L,Q) Toshiba Semiconductor and Storage 2sk3127.pdf Description: MOSFET N-CH 30V 45A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
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2SK3132(Q) Toshiba Semiconductor and Storage 2sk3132ds.pdf Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 1mA
Supplier Device Package: TO-3P(L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V
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2SK3176(F) 2SK3176(F) Toshiba Semiconductor and Storage docget.jsp?did=15797&prodName=2SK3176 Description: MOSFET N-CH 200V 30A TO-3PN
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2SK3314(Q) 2SK3314(Q) Toshiba Semiconductor and Storage 2SK3314.pdf Description: MOSFET N-CH 500V 15A TO-3PN
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2SK3758(Q,M) 2SK3758(Q,M) Toshiba Semiconductor and Storage 2SK3758.pdf Description: MOSFET N-CH 500V 5A TO-220AB
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4N29(SHORT,F) 4N29(SHORT,F) Toshiba Semiconductor and Storage 4N29(A),30,31,32(A),33(Short).pdf Description: OPTOISO 2.5KV DARL W/BASE 6DIP
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4N29A(SHORT,F) 4N29A(SHORT,F) Toshiba Semiconductor and Storage 4N29(A),30,31,32(A),33(Short).pdf Description: OPTOISO 2.5KV DARL W/BASE 6DIP
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4N33(SHORT,F) 4N33(SHORT,F) Toshiba Semiconductor and Storage 4N29(A),30,31,32(A),33(Short).pdf Description: OPTOISO 2.5KV DARL W/BASE 6DIP
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6N138(TP1,F) 6N138(TP1,F) Toshiba Semiconductor and Storage 6N138_datasheet_en_20190610.pdf?did=16805&prodName=6N138 Description: OPTOISO 2.5KV DARL W/BASE 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 1µs, 4µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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TLP114A(TPR,F) TLP114A(TPR,F) Toshiba Semiconductor and Storage docget.jsp?did=16813&prodName=TLP114A Description: OPTOISOLTR 3.75KV TRANS 6-MFSOP
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TLP127(TPL,U,F) TLP127(TPL,U,F) Toshiba Semiconductor and Storage docget.jsp?did=16902&prodName=TLP127 Description: OPTOISOLTR 2.5KV DARLNG 6-MFSOP
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TLP130(TPR,F) TLP130(TPR,F) Toshiba Semiconductor and Storage TLP130.pdf Description: OPTOISO 3.75KV TRANS 6-MFSOP
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TLP331(BV,F) TLP331(BV,F) Toshiba Semiconductor and Storage TLP331%2C2_Rev2007.pdf Description: OPTOISO 5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP631(BL,F) TLP631(BL,F) Toshiba Semiconductor and Storage TLP631_TLP632_20170517.pdf Description: OPTOISO 5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP631(GR,F) TLP631(GR,F) Toshiba Semiconductor and Storage TLP631_TLP632_20170517.pdf Description: OPTOISO 5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP2601(TP1,F) TLP2601(TP1,F) Toshiba Semiconductor and Storage TLP2601_datasheet_en_20190617.pdf?did=16834&prodName=TLP2601 Description: OPTOISO 3.75KV OPN COLL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
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2SK3565(Q,M) 2SK3565(Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 900V 5A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
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TA7267BP(O) TA7267BP(O) Toshiba Semiconductor and Storage docget.jsp?did=16114&prodName=TA7267BP Description: IC MOTOR DRIVER 6V-18V 7HSIP
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TA7291FG(O,EL) TA7291FG(O,EL) Toshiba Semiconductor and Storage Description: IC MOTOR DRIVER 4.5V-20V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 20V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 0V ~ 20V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
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TA7291P(O) TA7291P(O) Toshiba Semiconductor and Storage Description: IC MOTOR DRIVER 4.5V-20V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 20V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 0V ~ 20V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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TA7291SG(O,J) TA7291SG(O,J) Toshiba Semiconductor and Storage Description: IC MOTOR DRIVER 4.5V-20V 9SIP
Packaging: Tube
Package / Case: 9-SIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 20V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 0V ~ 20V
Supplier Device Package: 9-SIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
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TLP124F TLP124.pdf
TLP124F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Tube
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TC74LCX16244ELF
TC74LCX16244ELF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
на замовлення 1481 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+158.37 грн
10+95.26 грн
25+80.37 грн
100+59.58 грн
250+51.78 грн
500+46.97 грн
Мінімальне замовлення: 3
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TLP126TPRF
TLP126TPRF
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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CMS01(TE12R,Q) CLS01.pdf
CMS01(TE12R,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A MFLAT
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TLP626-4(F) TLP626-2.pdf
TLP626-4(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP250(TP1,F)
TLP250(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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TLP250(TP1,F)
TLP250(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 1.5A
Technology: Optical Coupling
Current - Output High, Low: 500mA, 500mA
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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4N25A(SHORT,F) 4N25,25A,26,27,28%20Short.pdf
4N25A(SHORT,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
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TLP2200F Art-TLP2200.jpg
TLP2200F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRI-STATE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 2.5MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 35ns, 20ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP350(F) TLP350_datasheet_en_20171018.pdf?did=6217&prodName=TLP350
TLP350(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: UR
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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TLP504A(F) description TLP504A%2C-2.pdf
TLP504A(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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TLP525GF docget.jsp?did=16937&prodName=TLP525G
TLP525GF
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRIAC 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Current - Hold (Ih): 200µA (Typ)
Supplier Device Package: 4-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Last Time Buy
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 28919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.54 грн
10+53.18 грн
100+39.39 грн
500+33.97 грн
1000+27.97 грн
2000+26.57 грн
5000+25.55 грн
10000+24.96 грн
25000+24.57 грн
Мінімальне замовлення: 4
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TLP557(F)
TLP557(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRANS INVERTR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Power Transistor Driver
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 5V ~ 13V
Input Type: DC
Current - Output / Channel: 320mA
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 2kV/µs
Propagation Delay tpLH / tpHL (Max): 5µs, 5µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Forward (Vf) (Typ): 1.55 V
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TLP558(F) Art-TLP558.jpg
TLP558(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRI-STATE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 10mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 35ns, 20ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 40 mA
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TLP627(TP1,F)
TLP627(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP632(F) TLP631_TLP632_20170517.pdf
TLP632(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP731(D4-GR,F) 4N25-withBaseConn-v1.jpg
TLP731(D4-GR,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 4KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP627(TP1,F)
TLP627(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP280-4(GB-TP,J,F
TLP280-4(GB-TP,J,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 4CH TRANS 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP350(TP1,F) TLP350_datasheet_en_20171018.pdf?did=6217&prodName=TLP350
TLP350(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.6V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: UR
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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LTA057A340F LTA057A340F.pdf
LTA057A340F
Виробник: Toshiba Semiconductor and Storage
Description: LCD 5.7INCH 320X240 QVGA
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: LED - White
Interface: Parallel, 18-Bit (RGB)
Viewing Area: 115.20mm W x 86.40mm H
Dot Pixels: 320 x 240 (QVGA)
Diagonal Screen Size: 5.7" (144.78mm)
Graphics Color: Red, Green, Blue (RGB)
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LTA070A321F LTA070A321F.pdf
LTA070A321F
Виробник: Toshiba Semiconductor and Storage
Description: LCD 7INCH 800X480 WVGA TOUCH
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: CCFL
Interface: Parallel, 18-Bit (RGB)
Viewing Area: 152.40mm W x 91.44mm H
Dot Pixels: 800 x 480 (WVGA)
Diagonal Screen Size: 7" (177.80mm)
Graphics Color: Red, Green, Blue (RGB)
Touchscreen: Resistive
Part Status: Discontinued at Digi-Key
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LTA085C184F LTA085C184F.pdf
LTA085C184F
Виробник: Toshiba Semiconductor and Storage
Description: LCD 8.5INCH 800X480 WVGA TOUCH
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: CCFL
Interface: Parallel, 18-Bit (RGB)
Viewing Area: 184.80mm W x 110.88mm H
Dot Pixels: 800 x 480 (WVGA)
Diagonal Screen Size: 8.5" (215.90mm)
Graphics Color: Red, Green, Blue (RGB)
Touchscreen: Resistive
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LTD089EXWS LTD089EXWS.pdf
LTD089EXWS
Виробник: Toshiba Semiconductor and Storage
Description: LCD 8.9INCH 1280X768WXGA TRANSFL
Packaging: Box
Display Type: TFT - Color
Display Mode: Transflective
Backlight: LED - White
Interface: LVDS
Viewing Area: 193.90mm W x 116.40mm H
Dot Pixels: 1280 x 768
Diagonal Screen Size: 8.9" (226.06mm)
Graphics Color: Red, Green, Blue (RGB)
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TFD58W26MW TFD58W26MW.pdf
TFD58W26MW
Виробник: Toshiba Semiconductor and Storage
Description: LCD 5.8INCH 400X234 WQVGA
Packaging: Box
Display Type: TFT - Color
Display Mode: Transmissive
Backlight: CCFL
Interface: Composite
Viewing Area: 127.20mm W x 71.80mm H
Dot Pixels: 400 x 234
Diagonal Screen Size: 5.8" (147.32mm)
Graphics Color: Red, Green, Blue (RGB)
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2SK1381(F) 2SK1381.pdf
2SK1381(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 50A TO-3PN
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2SK2267(Q) 2SK2267.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A TO-3P(L)
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2SK2615(TE12L,F) 2SK2615.pdf
2SK2615(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A PW-MINI
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2SK2719(F) 2SK2719.pdf
2SK2719(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 3A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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2SK2847(F) 2SK2847.pdf
2SK2847(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 8A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)IS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
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2SK2916(F) 2SK2916_Rev2009_DS.pdf
2SK2916(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 14A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)IS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
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2SK2917(F) 2SK2917DS.pdf
2SK2917(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 18A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)IS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 10 V
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2SK2964(TE12L,F) 2SK2964.pdf
2SK2964(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2A PW-MINI
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2SK2967(F) 2sk2967.pdf
2SK2967(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 30A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
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2SK2991(TE24L,Q) 2SK2991DS.pdf
2SK2991(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SM
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2SK2993(TE24L,Q) 2SK2993.pdf
2SK2993(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
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2SK2995(F) 2SK2995.pdf
2SK2995(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 30A TO3PIS
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-3P(N)IS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
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2SK3017(F) docget.jsp?did=15710&prodName=2SK3017
2SK3017(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 8.5A TO-3PN
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2SK3068(TE24L,Q) 2sk3068.pdf
2SK3068(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
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2SK3127(TE24L,Q) 2sk3127.pdf
2SK3127(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
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2SK3132(Q) 2sk3132ds.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 50A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 1mA
Supplier Device Package: TO-3P(L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 10 V
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2SK3176(F) docget.jsp?did=15797&prodName=2SK3176
2SK3176(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 30A TO-3PN
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2SK3314(Q) 2SK3314.pdf
2SK3314(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 15A TO-3PN
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2SK3758(Q,M) 2SK3758.pdf
2SK3758(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO-220AB
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4N29(SHORT,F) 4N29(A),30,31,32(A),33(Short).pdf
4N29(SHORT,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 6DIP
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4N29A(SHORT,F) 4N29(A),30,31,32(A),33(Short).pdf
4N29A(SHORT,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 6DIP
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4N33(SHORT,F) 4N29(A),30,31,32(A),33(Short).pdf
4N33(SHORT,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 6DIP
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6N138(TP1,F) 6N138_datasheet_en_20190610.pdf?did=16805&prodName=6N138
6N138(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV DARL W/BASE 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 1µs, 4µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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TLP114A(TPR,F) docget.jsp?did=16813&prodName=TLP114A
TLP114A(TPR,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRANS 6-MFSOP
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TLP127(TPL,U,F) docget.jsp?did=16902&prodName=TLP127
TLP127(TPL,U,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV DARLNG 6-MFSOP
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TLP130(TPR,F) TLP130.pdf
TLP130(TPR,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-MFSOP
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TLP331(BV,F) TLP331%2C2_Rev2007.pdf
TLP331(BV,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP631(BL,F) TLP631_TLP632_20170517.pdf
TLP631(BL,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP631(GR,F) TLP631_TLP632_20170517.pdf
TLP631(GR,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP2601(TP1,F) TLP2601_datasheet_en_20190617.pdf?did=16834&prodName=TLP2601
TLP2601(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV OPN COLL 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 10MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 1kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
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2SK3565(Q,M) Mosfets_Prod_Guide.pdf
2SK3565(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 5A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
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TA7267BP(O) docget.jsp?did=16114&prodName=TA7267BP
TA7267BP(O)
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 6V-18V 7HSIP
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TA7291FG(O,EL)
TA7291FG(O,EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-20V 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 20V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 0V ~ 20V
Supplier Device Package: 16-HSOP
Motor Type - AC, DC: Brushed DC
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TA7291P(O)
TA7291P(O)
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-20V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 20V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 0V ~ 20V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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TA7291SG(O,J)
TA7291SG(O,J)
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-20V 9SIP
Packaging: Tube
Package / Case: 9-SIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Interface: Parallel
Operating Temperature: -30°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 20V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 0V ~ 20V
Supplier Device Package: 9-SIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
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