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TLP332(F) TLP332(F) Toshiba Semiconductor and Storage TLP331,2_Rev2007.pdf Description: OPTOISOLATR 5KV TRANSISTOR 6-DIP
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
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TLP3542(F) TLP3542(F) Toshiba Semiconductor and Storage TLP3542_datasheet_en_20190624.pdf?did=1284&prodName=TLP3542 Description: SSR RELAY SPST-NO 2.5A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP (Cut), 5 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -20°C ~ 85°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 4224 шт:
термін постачання 21-31 дні (днів)
2+199.37 грн
10+170.96 грн
25+163.28 грн
50+148.00 грн
100+142.93 грн
250+136.48 грн
500+129.64 грн
1000+125.19 грн
Мінімальне замовлення: 2
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TLP371F TLP371F Toshiba Semiconductor and Storage TLP371%2C2_Rev2007.pdf Description: OPTOISO 5KV DARL W/BASE 6-DIP
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
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TLP371(TP1,F) TLP371(TP1,F) Toshiba Semiconductor and Storage TLP371%2C2_Rev2007.pdf Description: OPTOISO 5KV DARL W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SMD
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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TLP504A-2(GB,F) TLP504A-2(GB,F) Toshiba Semiconductor and Storage TLP504A%2C-2.pdf Description: OPTOISO 2.5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP504A(GB,F) TLP504A(GB,F) Toshiba Semiconductor and Storage TLP504A%2C-2.pdf Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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TLP525G-2(F) TLP525G-2(F) Toshiba Semiconductor and Storage docget.jsp?did=16937&prodName=TLP525G Description: OPTOISOLATOR 2.5KV TRIAC 8DIP
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TLP550(F) Toshiba Semiconductor and Storage Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 300ns, 1µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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TLP559(F) Toshiba Semiconductor and Storage Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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TLP620(F) TLP620(F) Toshiba Semiconductor and Storage docget.jsp?did=16776&prodName=TLP620 Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP620-2(F) TLP620-2(F) Toshiba Semiconductor and Storage TLP620_datasheet_en_20190624.pdf?did=16776&prodName=TLP620 Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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TLP620-2(GB,F) TLP620-2(GB,F) Toshiba Semiconductor and Storage docget.jsp?did=16776&prodName=TLP620 Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
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TLP620-4(F) TLP620-4(F) Toshiba Semiconductor and Storage TLP620_datasheet_en_20190624.pdf?did=16776&prodName=TLP620 Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP620-4(GB,F) TLP620-4(GB,F) Toshiba Semiconductor and Storage TLP620_datasheet_en_20190624.pdf?did=16776&prodName=TLP620 Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP620(GB,F) TLP620(GB,F) Toshiba Semiconductor and Storage docget.jsp?did=16776&prodName=TLP620 Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
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TLP624F TLP624F Toshiba Semiconductor and Storage Art-TLP621%5E624.jpg Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP624-2(F) TLP624-2(F) Toshiba Semiconductor and Storage Art-TLP621%5E624.jpg Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP624LF1F TLP624LF1F Toshiba Semiconductor and Storage Art-TLP621%5E624.jpg Description: OPTOISOLATR 5KV TRANSISTOR 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP626(F) TLP626(F) Toshiba Semiconductor and Storage TLP626-2.pdf Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
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TLP626-2(F) TLP626-2(F) Toshiba Semiconductor and Storage TLP626-2.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP626(BV,F) TLP626(BV,F) Toshiba Semiconductor and Storage TLP626-2.pdf Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Last Time Buy
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP627-2(F) TLP627-2(F) Toshiba Semiconductor and Storage docget.jsp?did=16914&prodName=TLP627 Description: OPTOISO 5KV 2CH DARLINGTON 8-DIP
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TLP627-4F Toshiba Semiconductor and Storage Description: OPTOISOLATOR 5KV 4CH DARL 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 16-DIP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP630(GB,F) TLP630(GB,F) Toshiba Semiconductor and Storage Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Last Time Buy
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP631(F) TLP631(F) Toshiba Semiconductor and Storage TLP631_TLP632_20170517.pdf Description: OPTOISO 5KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP631(GB,F) TLP631(GB,F) Toshiba Semiconductor and Storage TLP631_TLP632_20170517.pdf Description: OPTOISO 5KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP632(GB,F) TLP632(GB,F) Toshiba Semiconductor and Storage TLP631_TLP632_20170517.pdf Description: OPTOISOLATR 5KV TRANSISTOR 6-DIP
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
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TLP732(D4-GR-LF2,F TLP732(D4-GR-LF2,F Toshiba Semiconductor and Storage Description: OPTOISOLATR 4KV TRANSISTOR 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 4000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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2SA1837(F,M) 2SA1837(F,M) Toshiba Semiconductor and Storage 2SA1837.pdf Description: TRANS PNP 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SA1943-O(Q) 2SA1943-O(Q) Toshiba Semiconductor and Storage 2SA1943N_datasheet_en_20150512.pdf?did=13908&prodName=2SA1943N Description: TRANS PNP 230V 15A TO-3P
Packaging: Tray
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
на замовлення 3531 шт:
термін постачання 21-31 дні (днів)
2+288.77 грн
10+182.85 грн
100+128.56 грн
500+98.91 грн
1000+91.93 грн
2000+86.06 грн
Мінімальне замовлення: 2
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2SA1962-O(Q) 2SA1962-O(Q) Toshiba Semiconductor and Storage 2SA1962_datasheet_en_20131101.pdf?did=20429&prodName=2SA1962 Description: TRANS PNP 230V 15A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 130 W
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2SC4793(F,M) 2SC4793(F,M) Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC5242-O(Q) 2SC5242-O(Q) Toshiba Semiconductor and Storage 2SC5242_datasheet_en_20131101.pdf?did=20673&prodName=2SC5242 Description: TRANS NPN 230V 15A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 130 W
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2SK2201(TE16L1,NQ) 2SK2201(TE16L1,NQ) Toshiba Semiconductor and Storage 2SK2201.pdf Description: MOSFET N-CH 100V 3A PW-MOLD
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2SK2231(TE16L1,NQ) 2SK2231(TE16L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=11834&prodName=2SK2231 Description: MOSFET N-CH 60V 5A PW-MOLD
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В кошику  од. на суму  грн.
2SK2963(TE12L,F) 2SK2963(TE12L,F) Toshiba Semiconductor and Storage 2SK2963.pdf Description: MOSFET N-CH 100V 1A PW-MINI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MINI
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
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2SK3564(STA4,Q,M) 2SK3564(STA4,Q,M) Toshiba Semiconductor and Storage 2SK3564_datasheet_en_20131101.pdf?did=856&prodName=2SK3564 Description: MOSFET N-CH 900V 3A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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2SK3566(STA4,Q,M) 2SK3566(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 900V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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2SK3742(Q,M) 2SK3742(Q,M) Toshiba Semiconductor and Storage docget.jsp?did=2248&prodName=2SK3742 Description: MOSFET N-CH 900V 5A TO-220SIS
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В кошику  од. на суму  грн.
TPC8207(TE12L,Q) TPC8207(TE12L,Q) Toshiba Semiconductor and Storage TPC8207.pdf Description: MOSFET 2N-CH 20V 6A 8SOP
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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TPCF8402(TE85L,F,M TPCF8402(TE85L,F,M Toshiba Semiconductor and Storage TPCF8402.pdf Description: MOSFET N/P-CH 30V 4A/3.2A VS-8
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 330mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TPCF8A01(TE85L) Toshiba Semiconductor and Storage TPCF8A01.pdf Description: MOSFET N-CH 20V 3A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
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2SJ377(TE16R1,NQ) 2SJ377(TE16R1,NQ) Toshiba Semiconductor and Storage 2SJ377.pdf Description: MOSFET P-CH 60V 5A PW-MOLD
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
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2SJ377(TE16R1,NQ) 2SJ377(TE16R1,NQ) Toshiba Semiconductor and Storage 2SJ377.pdf Description: MOSFET P-CH 60V 5A PW-MOLD
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TPCF8104(TE85L,F,M TPCF8104(TE85L,F,M Toshiba Semiconductor and Storage docget.jsp?did=872&prodName=TPCF8104 Description: MOSFET P-CH 30V 6A VS-8
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TPCF8201(TE85L,F,M TPCF8201(TE85L,F,M Toshiba Semiconductor and Storage TPCF8201.pdf Description: MOSFET 2N-CH 20V 3A VS-8
Vgs(th) (Max) @ Id: 1.2V @ 200µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 330mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Supplier Device Package: VS-8 (2.9x1.5)
товару немає в наявності
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TPCF8201(TE85L,F,M TPCF8201(TE85L,F,M Toshiba Semiconductor and Storage TPCF8201.pdf Description: MOSFET 2N-CH 20V 3A VS-8
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 330mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
товару немає в наявності
В кошику  од. на суму  грн.
TPCF8302(TE85L,F,M TPCF8302(TE85L,F,M Toshiba Semiconductor and Storage docget.jsp?did=873&prodName=TPCF8302 Description: MOSFET 2P-CH 20V 3A VS-8
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TPCF8B01(TE85L,F,M TPCF8B01(TE85L,F,M Toshiba Semiconductor and Storage TPCF8B01.PDF Description: MOSFET P-CH 20V 2.7A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
CMS01(TE12L,Q,M) CMS01(TE12L,Q,M) Toshiba Semiconductor and Storage CMS01_Nov2013.pdf Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
на замовлення 5983 шт:
термін постачання 21-31 дні (днів)
6+55.38 грн
10+36.57 грн
100+27.50 грн
500+17.00 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CMS01(TE12L,Q,M) CMS01(TE12L,Q,M) Toshiba Semiconductor and Storage CMS01_Nov2013.pdf Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+15.04 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS03(TE12L,Q,M) CMS03(TE12L,Q,M) Toshiba Semiconductor and Storage CMS03_datasheet_en_20180404.pdf?did=3131&prodName=CMS03 Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 28053 шт:
термін постачання 21-31 дні (днів)
7+45.89 грн
10+33.67 грн
100+25.00 грн
500+15.96 грн
1000+15.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMS03(TE12L,Q,M) CMS03(TE12L,Q,M) Toshiba Semiconductor and Storage CMS03_datasheet_en_20180404.pdf?did=3131&prodName=CMS03 Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+14.84 грн
6000+13.95 грн
9000+13.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS04(TE12L,Q,M) CMS04(TE12L,Q,M) Toshiba Semiconductor and Storage CMS04_datasheet_en_20180911.pdf?did=3133&prodName=CMS04 Description: DIODE SCHOTTKY 30V 5A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+18.75 грн
6000+17.10 грн
9000+16.39 грн
15000+15.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS04(TE12L,Q,M) CMS04(TE12L,Q,M) Toshiba Semiconductor and Storage CMS04_datasheet_en_20180911.pdf?did=3133&prodName=CMS04 Description: DIODE SCHOTTKY 30V 5A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
на замовлення 20004 шт:
термін постачання 21-31 дні (днів)
5+67.25 грн
10+30.70 грн
100+29.29 грн
500+22.68 грн
1000+20.57 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CMS06(TE12L,Q,M) CMS06(TE12L,Q,M) Toshiba Semiconductor and Storage CMS06_datasheet_en_20131101.pdf?did=3138&prodName=CMS06 Description: DIODE SCHOTTKY 30V 2A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+11.83 грн
6000+11.26 грн
9000+10.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS06(TE12L,Q,M) CMS06(TE12L,Q,M) Toshiba Semiconductor and Storage CMS06_datasheet_en_20131101.pdf?did=3138&prodName=CMS06 Description: DIODE SCHOTTKY 30V 2A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
на замовлення 9441 шт:
термін постачання 21-31 дні (днів)
20+15.82 грн
25+12.19 грн
Мінімальне замовлення: 20
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CMS08(TE12L,Q) CMS08(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3142&prodName=CMS08 Description: DIODE SCHOTTKY 30V 1A MFLAT
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CMS09(TE12L,Q) CMS09(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?did=3144&prodName=CMS09 Description: DIODE SCHOTTKY 30V 1A MFLAT
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CMS10(TE12L,Q,M) CMS10(TE12L,Q,M) Toshiba Semiconductor and Storage CMS10_datasheet_en_20131101.pdf?did=3147&prodName=CMS10 Description: DIODE SCHOTTKY 40V 1A M-FLAT
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: M-FLAT (2.4x3.8)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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TLP332(F) TLP331,2_Rev2007.pdf
TLP332(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 6-DIP
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
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TLP3542(F) TLP3542_datasheet_en_20190624.pdf?did=1284&prodName=TLP3542
TLP3542(F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP (Cut), 5 Lead
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -20°C ~ 85°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 4224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+199.37 грн
10+170.96 грн
25+163.28 грн
50+148.00 грн
100+142.93 грн
250+136.48 грн
500+129.64 грн
1000+125.19 грн
Мінімальне замовлення: 2
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TLP371F TLP371%2C2_Rev2007.pdf
TLP371F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV DARL W/BASE 6-DIP
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
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TLP371(TP1,F) TLP371%2C2_Rev2007.pdf
TLP371(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV DARL W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 40µs, 15µs
Turn On / Turn Off Time (Typ): 50µs, 15µs
Voltage - Output (Max): 300V
Supplier Device Package: 6-SMD
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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TLP504A-2(GB,F) TLP504A%2C-2.pdf
TLP504A-2(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP504A(GB,F) TLP504A%2C-2.pdf
TLP504A(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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TLP525G-2(F) docget.jsp?did=16937&prodName=TLP525G
TLP525G-2(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRIAC 8DIP
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TLP550(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 300ns, 1µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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TLP559(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 1CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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TLP620(F) docget.jsp?did=16776&prodName=TLP620
TLP620(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP620-2(F) TLP620_datasheet_en_20190624.pdf?did=16776&prodName=TLP620
TLP620-2(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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TLP620-2(GB,F) docget.jsp?did=16776&prodName=TLP620
TLP620-2(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
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TLP620-4(F) TLP620_datasheet_en_20190624.pdf?did=16776&prodName=TLP620
TLP620-4(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP620-4(GB,F) TLP620_datasheet_en_20190624.pdf?did=16776&prodName=TLP620
TLP620-4(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP620(GB,F) docget.jsp?did=16776&prodName=TLP620
TLP620(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
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TLP624F Art-TLP621%5E624.jpg
TLP624F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP624-2(F) Art-TLP621%5E624.jpg
TLP624-2(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP624LF1F Art-TLP621%5E624.jpg
TLP624LF1F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 4-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP626(F) TLP626-2.pdf
TLP626(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
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TLP626-2(F) TLP626-2.pdf
TLP626-2(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP626(BV,F) TLP626-2.pdf
TLP626(BV,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 4-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Last Time Buy
Rise / Fall Time (Typ): 8µs, 8µs
Turn On / Turn Off Time (Typ): 10µs, 8µs
Voltage - Output (Max): 55V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 1mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP627-2(F) docget.jsp?did=16914&prodName=TLP627
TLP627-2(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH DARLINGTON 8-DIP
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TLP627-4F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 4CH DARL 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 16-DIP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
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TLP630(GB,F)
TLP630(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Last Time Buy
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP631(F) TLP631_TLP632_20170517.pdf
TLP631(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP631(GB,F) TLP631_TLP632_20170517.pdf
TLP631(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP632(GB,F) TLP631_TLP632_20170517.pdf
TLP632(GB,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 5KV TRANSISTOR 6-DIP
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
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TLP732(D4-GR-LF2,F
TLP732(D4-GR-LF2,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATR 4KV TRANSISTOR 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 4000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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2SA1837(F,M) 2SA1837.pdf
2SA1837(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 70MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SA1943-O(Q) 2SA1943N_datasheet_en_20150512.pdf?did=13908&prodName=2SA1943N
2SA1943-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO-3P
Packaging: Tray
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
на замовлення 3531 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.77 грн
10+182.85 грн
100+128.56 грн
500+98.91 грн
1000+91.93 грн
2000+86.06 грн
Мінімальне замовлення: 2
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2SA1962-O(Q) 2SA1962_datasheet_en_20131101.pdf?did=20429&prodName=2SA1962
2SA1962-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 130 W
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2SC4793(F,M) 2SC4793_Rev2006.pdf
2SC4793(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC5242-O(Q) 2SC5242_datasheet_en_20131101.pdf?did=20673&prodName=2SC5242
2SC5242-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO-3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 130 W
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2SK2201(TE16L1,NQ) 2SK2201.pdf
2SK2201(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3A PW-MOLD
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2SK2231(TE16L1,NQ) docget.jsp?did=11834&prodName=2SK2231
2SK2231(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 5A PW-MOLD
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2SK2963(TE12L,F) 2SK2963.pdf
2SK2963(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 1A PW-MINI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MINI
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
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2SK3564(STA4,Q,M) 2SK3564_datasheet_en_20131101.pdf?did=856&prodName=2SK3564
2SK3564(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 3A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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2SK3566(STA4,Q,M) Mosfets_Prod_Guide.pdf
2SK3566(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 2.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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2SK3742(Q,M) docget.jsp?did=2248&prodName=2SK3742
2SK3742(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 5A TO-220SIS
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TPC8207(TE12L,Q) TPC8207.pdf
TPC8207(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 6A 8SOP
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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TPCF8402(TE85L,F,M TPCF8402.pdf
TPCF8402(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 4A/3.2A VS-8
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 330mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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TPCF8A01(TE85L) TPCF8A01.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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2SJ377(TE16R1,NQ) 2SJ377.pdf
2SJ377(TE16R1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 5A PW-MOLD
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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2SJ377(TE16R1,NQ) 2SJ377.pdf
2SJ377(TE16R1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 5A PW-MOLD
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PW-MOLD
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TPCF8104(TE85L,F,M docget.jsp?did=872&prodName=TPCF8104
TPCF8104(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 6A VS-8
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TPCF8201(TE85L,F,M TPCF8201.pdf
TPCF8201(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 3A VS-8
Vgs(th) (Max) @ Id: 1.2V @ 200µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 330mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Supplier Device Package: VS-8 (2.9x1.5)
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TPCF8201(TE85L,F,M TPCF8201.pdf
TPCF8201(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 3A VS-8
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 330mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
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TPCF8302(TE85L,F,M docget.jsp?did=873&prodName=TPCF8302
TPCF8302(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 3A VS-8
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TPCF8B01(TE85L,F,M TPCF8B01.PDF
TPCF8B01(TE85L,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.7A VS-8
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: VS-8 (2.9x1.5)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Power Dissipation (Max): 330mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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CMS01(TE12L,Q,M) CMS01_Nov2013.pdf
CMS01(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
на замовлення 5983 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.38 грн
10+36.57 грн
100+27.50 грн
500+17.00 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CMS01(TE12L,Q,M) CMS01_Nov2013.pdf
CMS01(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.04 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS03(TE12L,Q,M) CMS03_datasheet_en_20180404.pdf?did=3131&prodName=CMS03
CMS03(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 28053 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+45.89 грн
10+33.67 грн
100+25.00 грн
500+15.96 грн
1000+15.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMS03(TE12L,Q,M) CMS03_datasheet_en_20180404.pdf?did=3131&prodName=CMS03
CMS03(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.84 грн
6000+13.95 грн
9000+13.67 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS04(TE12L,Q,M) CMS04_datasheet_en_20180911.pdf?did=3133&prodName=CMS04
CMS04(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 5A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+18.75 грн
6000+17.10 грн
9000+16.39 грн
15000+15.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS04(TE12L,Q,M) CMS04_datasheet_en_20180911.pdf?did=3133&prodName=CMS04
CMS04(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 5A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
на замовлення 20004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.25 грн
10+30.70 грн
100+29.29 грн
500+22.68 грн
1000+20.57 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CMS06(TE12L,Q,M) CMS06_datasheet_en_20131101.pdf?did=3138&prodName=CMS06
CMS06(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.83 грн
6000+11.26 грн
9000+10.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMS06(TE12L,Q,M) CMS06_datasheet_en_20131101.pdf?did=3138&prodName=CMS06
CMS06(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
на замовлення 9441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.82 грн
25+12.19 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
CMS08(TE12L,Q) docget.jsp?did=3142&prodName=CMS08
CMS08(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A MFLAT
товару немає в наявності
В кошику  од. на суму  грн.
CMS09(TE12L,Q) docget.jsp?did=3144&prodName=CMS09
CMS09(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A MFLAT
товару немає в наявності
В кошику  од. на суму  грн.
CMS10(TE12L,Q,M) CMS10_datasheet_en_20131101.pdf?did=3147&prodName=CMS10
CMS10(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A M-FLAT
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: M-FLAT (2.4x3.8)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
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