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RN2403,LXHF RN2403,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN2403,LXHF RN2403,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18874&prodName=RN2404 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
14+25.04 грн
23+14.55 грн
100+9.10 грн
500+6.31 грн
1000+5.58 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RN1416,LXHF RN1416,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1416 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.62 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1416,LXHF RN1416,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18796&prodName=RN1416 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5384 шт:
термін постачання 21-31 дні (днів)
16+22.45 грн
25+13.47 грн
100+8.40 грн
500+5.82 грн
1000+5.15 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
RN2407,LXHF RN2407,LXHF Toshiba Semiconductor and Storage RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+5.16 грн
6000+4.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN2407,LXHF RN2407,LXHF Toshiba Semiconductor and Storage RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
14+25.04 грн
23+14.55 грн
100+9.10 грн
500+6.31 грн
1000+5.58 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RN2417,LXHF RN2417,LXHF Toshiba Semiconductor and Storage RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+5.16 грн
6000+4.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN2417,LXHF RN2417,LXHF Toshiba Semiconductor and Storage RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
14+25.91 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
74HC240D 74HC240D Toshiba Semiconductor and Storage 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D description Description: IC BUFFER INVERTING 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+23.08 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
74HC240D 74HC240D Toshiba Semiconductor and Storage 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D description Description: IC BUFFER INVERTING 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 3712 шт:
термін постачання 21-31 дні (днів)
7+50.09 грн
10+34.18 грн
25+30.64 грн
100+25.16 грн
250+23.45 грн
500+22.41 грн
1000+21.21 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
HN1A01FU-GR,LF HN1A01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
HN1A01FU-GR,LF HN1A01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 1518 шт:
термін постачання 21-31 дні (днів)
20+17.27 грн
34+9.98 грн
100+6.17 грн
500+4.24 грн
1000+3.74 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TLP185(GR-TPR,SE TLP185(GR-TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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TLP185(GR-TPR,SE TLP185(GR-TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 827 шт:
термін постачання 21-31 дні (днів)
10+35.41 грн
15+23.45 грн
100+16.74 грн
500+12.90 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TLP715(D4-TP,F) Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
товару немає в наявності
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TLP715F(D4-TP,F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715(D4-MBS-TP,F Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715(D4,F) Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(TP,F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715(TP,F) Toshiba Semiconductor and Storage TLP715_9-25-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(D4,F) Toshiba Semiconductor and Storage TLP715F_6-3-19.pdf Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2710(D4,E TLP2710(D4,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
4+112.27 грн
10+76.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP2710(LF4,E TLP2710(LF4,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
4+112.27 грн
10+76.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP2710(D4-LF4,E TLP2710(D4-LF4,E Toshiba Semiconductor and Storage TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
4+112.27 грн
10+76.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SSM6K341NU,LF SSM6K341NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56020&prodName=SSM6K341NU Description: MOSFET N-CH 60V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+12.01 грн
6000+10.59 грн
9000+10.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6K341NU,LF SSM6K341NU,LF Toshiba Semiconductor and Storage docget.jsp?did=56020&prodName=SSM6K341NU Description: MOSFET N-CH 60V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 13704 шт:
термін постачання 21-31 дні (днів)
7+52.68 грн
11+31.77 грн
100+20.39 грн
500+14.55 грн
1000+13.07 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CSLZ6V2,L3F CSLZ6V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V2 Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ6V2,L3F CSLZ6V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V2 Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
на замовлення 9270 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
55+6.15 грн
125+2.66 грн
500+2.29 грн
1000+2.09 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ6V8,L3F CSLZ6V8,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V8 Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.30 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
CSLZ6V8,L3F CSLZ6V8,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ6V8 Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
25+13.82 грн
40+8.48 грн
100+5.25 грн
500+3.59 грн
1000+3.15 грн
2000+2.79 грн
5000+2.35 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
CSLZ30V,L3F CSLZ30V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ30V Description: TVS DIODE 23VWM 51VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ30V,L3F CSLZ30V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ30V Description: TVS DIODE 23VWM 51VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
на замовлення 8892 шт:
термін постачання 21-31 дні (днів)
37+9.50 грн
51+6.57 грн
119+2.80 грн
500+2.49 грн
1000+2.29 грн
2000+2.26 грн
5000+2.19 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
CSLZ20V,L3F CSLZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ20V Description: TVS DIODE 15VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ20V,L3F CSLZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ20V Description: TVS DIODE 15VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 8387 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
55+6.15 грн
133+2.51 грн
500+2.22 грн
1000+2.02 грн
2000+1.96 грн
5000+1.86 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ16V,L3F CSLZ16V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ16V Description: TVS DIODE 12VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ16V,L3F CSLZ16V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ16V Description: TVS DIODE 12VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
на замовлення 9998 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
55+6.15 грн
125+2.66 грн
500+2.36 грн
1000+2.16 грн
2000+2.12 грн
5000+2.05 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ10V,L3F CSLZ10V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ10V Description: TVS DIODE 8VWM 18VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ10V,L3F CSLZ10V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ10V Description: TVS DIODE 8VWM 18VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
55+6.15 грн
116+2.87 грн
500+2.49 грн
1000+2.16 грн
2000+2.12 грн
5000+2.05 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ12V,L3F CSLZ12V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ12V Description: TVS DIODE 9VWM 28VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ12V,L3F CSLZ12V,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ12V Description: TVS DIODE 9VWM 28VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ8V2,L3F CSLZ8V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ8V2 Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
CSLZ8V2,L3F CSLZ8V2,L3F Toshiba Semiconductor and Storage docget.jsp?did=142902&prodName=CSLZ8V2 Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
на замовлення 9864 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
55+6.15 грн
133+2.51 грн
500+2.16 грн
1000+1.75 грн
2000+1.72 грн
5000+1.66 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
2SD2257(CANO,Q,M) 2SD2257(CANO,Q,M) Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
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2SD2257,NIKKIQ(J 2SD2257,NIKKIQ(J Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SD2257(Q,M) 2SD2257(Q,M) Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SD2257(CANO,A,Q) 2SD2257(CANO,A,Q) Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SD2257,Q(J 2SD2257,Q(J Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
2SD2257,KEHINQ(J 2SD2257,KEHINQ(J Toshiba Semiconductor and Storage 2SD2257_2006-11-21.pdf Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
В кошику  од. на суму  грн.
74HC541D 74HC541D Toshiba Semiconductor and Storage 74HC540D_datasheet_en_20201117.pdf?did=37230&prodName=74HC540D Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
74HC541D 74HC541D Toshiba Semiconductor and Storage 74HC540D_datasheet_en_20201117.pdf?did=37230&prodName=74HC540D Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
8+49.23 грн
10+33.76 грн
25+30.30 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LCX32FT Toshiba Semiconductor and Storage docget.jsp?did=15223&prodName=74LCX32FT Description: IC GATE OR 4CH 2-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
74LCX32FT Toshiba Semiconductor and Storage docget.jsp?did=15223&prodName=74LCX32FT Description: IC GATE OR 4CH 2-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1827 шт:
термін постачання 21-31 дні (днів)
9+41.45 грн
15+23.70 грн
25+19.46 грн
100+13.72 грн
250+11.49 грн
500+10.11 грн
1000+8.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
2SA1832-Y,LF 2SA1832-Y,LF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1832-Y,LF 2SA1832-Y,LF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 5470 шт:
термін постачання 21-31 дні (днів)
37+9.50 грн
56+5.99 грн
100+4.05 грн
500+2.88 грн
1000+2.57 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
2SA2154MFV-Y,L3F 2SA2154MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6105&prodName=2SA2154MFV Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+2.02 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
2SA2154MFV-Y,L3F 2SA2154MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6105&prodName=2SA2154MFV Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 15285 шт:
термін постачання 21-31 дні (днів)
27+12.95 грн
46+7.32 грн
100+4.51 грн
500+3.07 грн
1000+2.70 грн
2000+2.38 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
2SA2154MFVGR,L3F 2SA2154MFVGR,L3F Toshiba Semiconductor and Storage docget.jsp?did=6105&prodName=2SA2154MFV Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA2154MFVGR,L3F 2SA2154MFVGR,L3F Toshiba Semiconductor and Storage docget.jsp?did=6105&prodName=2SA2154MFV Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 7210 шт:
термін постачання 21-31 дні (днів)
27+12.95 грн
46+7.32 грн
100+4.51 грн
500+3.07 грн
1000+2.70 грн
2000+2.38 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TBD62387APG TBD62387APG Toshiba Semiconductor and Storage TBD62387AFNG_datasheet_en_20170321.pdf?did=57916&prodName=TBD62387AFNG Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
2+210.72 грн
20+116.18 грн
100+89.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RN2403,LXHF docget.jsp?did=18874&prodName=RN2404
RN2403,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN2403,LXHF docget.jsp?did=18874&prodName=RN2404
RN2403,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.04 грн
23+14.55 грн
100+9.10 грн
500+6.31 грн
1000+5.58 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RN1416,LXHF docget.jsp?did=18796&prodName=RN1416
RN1416,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.62 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1416,LXHF docget.jsp?did=18796&prodName=RN1416
RN1416,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5384 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+22.45 грн
25+13.47 грн
100+8.40 грн
500+5.82 грн
1000+5.15 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
RN2407,LXHF RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407
RN2407,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.16 грн
6000+4.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN2407,LXHF RN2407_datasheet_en_20210830.pdf?did=18876&prodName=RN2407
RN2407,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.04 грн
23+14.55 грн
100+9.10 грн
500+6.31 грн
1000+5.58 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RN2417,LXHF RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417
RN2417,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.16 грн
6000+4.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN2417,LXHF RN2417_datasheet_en_20210830.pdf?did=18883&prodName=RN2417
RN2417,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.91 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
74HC240D description 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D
74HC240D
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+23.08 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
74HC240D description 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D
74HC240D
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 3712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.09 грн
10+34.18 грн
25+30.64 грн
100+25.16 грн
250+23.45 грн
500+22.41 грн
1000+21.21 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
HN1A01FU-GR,LF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-GR,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
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HN1A01FU-GR,LF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-GR,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
на замовлення 1518 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.27 грн
34+9.98 грн
100+6.17 грн
500+4.24 грн
1000+3.74 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TLP185(GR-TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(GR-TPR,SE
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP185(GR-TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(GR-TPR,SE
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 827 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.41 грн
15+23.45 грн
100+16.74 грн
500+12.90 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TLP715(D4-TP,F) TLP715_9-25-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(D4-TP,F) TLP715F_6-3-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(F) TLP715F_6-3-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715(D4-MBS-TP,F TLP715_9-25-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715(D4,F) TLP715_9-25-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(TP,F) TLP715F_6-3-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715(TP,F) TLP715_9-25-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP715F(D4,F) TLP715F_6-3-19.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2710(D4,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(D4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+112.27 грн
10+76.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP2710(LF4,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+112.27 грн
10+76.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP2710(D4-LF4,E TLP2710_datasheet_en_20180309.pdf?did=29698&prodName=TLP2710
TLP2710(D4-LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+112.27 грн
10+76.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SSM6K341NU,LF docget.jsp?did=56020&prodName=SSM6K341NU
SSM6K341NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.01 грн
6000+10.59 грн
9000+10.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6K341NU,LF docget.jsp?did=56020&prodName=SSM6K341NU
SSM6K341NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 13704 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.68 грн
11+31.77 грн
100+20.39 грн
500+14.55 грн
1000+13.07 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CSLZ6V2,L3F docget.jsp?did=142902&prodName=CSLZ6V2
CSLZ6V2,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
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CSLZ6V2,L3F docget.jsp?did=142902&prodName=CSLZ6V2
CSLZ6V2,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 10.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 10.5V (Typ)
Power - Peak Pulse: 87W
Power Line Protection: No
Part Status: Active
на замовлення 9270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
55+6.15 грн
125+2.66 грн
500+2.29 грн
1000+2.09 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ6V8,L3F docget.jsp?did=142902&prodName=CSLZ6V8
CSLZ6V8,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.30 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
CSLZ6V8,L3F docget.jsp?did=142902&prodName=CSLZ6V8
CSLZ6V8,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 14.5VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Power - Peak Pulse: 105W
Power Line Protection: No
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.82 грн
40+8.48 грн
100+5.25 грн
500+3.59 грн
1000+3.15 грн
2000+2.79 грн
5000+2.35 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
CSLZ30V,L3F docget.jsp?did=142902&prodName=CSLZ30V
CSLZ30V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 51VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
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CSLZ30V,L3F docget.jsp?did=142902&prodName=CSLZ30V
CSLZ30V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 51VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 51V (Typ)
Power Line Protection: No
на замовлення 8892 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+9.50 грн
51+6.57 грн
119+2.80 грн
500+2.49 грн
1000+2.29 грн
2000+2.26 грн
5000+2.19 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
CSLZ20V,L3F docget.jsp?did=142902&prodName=CSLZ20V
CSLZ20V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
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CSLZ20V,L3F docget.jsp?did=142902&prodName=CSLZ20V
CSLZ20V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 9.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 8387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
55+6.15 грн
133+2.51 грн
500+2.22 грн
1000+2.02 грн
2000+1.96 грн
5000+1.86 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ16V,L3F docget.jsp?did=142902&prodName=CSLZ16V
CSLZ16V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 30VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
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CSLZ16V,L3F docget.jsp?did=142902&prodName=CSLZ16V
CSLZ16V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 30VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 30V (Typ)
Power Line Protection: No
на замовлення 9998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
55+6.15 грн
125+2.66 грн
500+2.36 грн
1000+2.16 грн
2000+2.12 грн
5000+2.05 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ10V,L3F docget.jsp?did=142902&prodName=CSLZ10V
CSLZ10V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
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CSLZ10V,L3F docget.jsp?did=142902&prodName=CSLZ10V
CSLZ10V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 9190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
55+6.15 грн
116+2.87 грн
500+2.49 грн
1000+2.16 грн
2000+2.12 грн
5000+2.05 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
CSLZ12V,L3F docget.jsp?did=142902&prodName=CSLZ12V
CSLZ12V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 28VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
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CSLZ12V,L3F docget.jsp?did=142902&prodName=CSLZ12V
CSLZ12V,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 28VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
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CSLZ8V2,L3F docget.jsp?did=142902&prodName=CSLZ8V2
CSLZ8V2,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
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CSLZ8V2,L3F docget.jsp?did=142902&prodName=CSLZ8V2
CSLZ8V2,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.5VWM 17VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 55W
Power Line Protection: No
на замовлення 9864 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
55+6.15 грн
133+2.51 грн
500+2.16 грн
1000+1.75 грн
2000+1.72 грн
5000+1.66 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
2SD2257(CANO,Q,M) 2SD2257_2006-11-21.pdf
2SD2257(CANO,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2257,NIKKIQ(J 2SD2257_2006-11-21.pdf
2SD2257,NIKKIQ(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2257(Q,M) 2SD2257_2006-11-21.pdf
2SD2257(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2257(CANO,A,Q) 2SD2257_2006-11-21.pdf
2SD2257(CANO,A,Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2257,Q(J 2SD2257_2006-11-21.pdf
2SD2257,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
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2SD2257,KEHINQ(J 2SD2257_2006-11-21.pdf
2SD2257,KEHINQ(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товару немає в наявності
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74HC541D 74HC540D_datasheet_en_20201117.pdf?did=37230&prodName=74HC540D
74HC541D
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
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74HC541D 74HC540D_datasheet_en_20201117.pdf?did=37230&prodName=74HC540D
74HC541D
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+49.23 грн
10+33.76 грн
25+30.30 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
74LCX32FT docget.jsp?did=15223&prodName=74LCX32FT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 4CH 2-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
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74LCX32FT docget.jsp?did=15223&prodName=74LCX32FT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 4CH 2-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1827 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.45 грн
15+23.70 грн
25+19.46 грн
100+13.72 грн
250+11.49 грн
500+10.11 грн
1000+8.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
2SA1832-Y,LF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
2SA1832-Y,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
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2SA1832-Y,LF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
2SA1832-Y,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 5470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+9.50 грн
56+5.99 грн
100+4.05 грн
500+2.88 грн
1000+2.57 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
2SA2154MFV-Y,L3F docget.jsp?did=6105&prodName=2SA2154MFV
2SA2154MFV-Y,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+2.02 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
2SA2154MFV-Y,L3F docget.jsp?did=6105&prodName=2SA2154MFV
2SA2154MFV-Y,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 15285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.95 грн
46+7.32 грн
100+4.51 грн
500+3.07 грн
1000+2.70 грн
2000+2.38 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
2SA2154MFVGR,L3F docget.jsp?did=6105&prodName=2SA2154MFV
2SA2154MFVGR,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA2154MFVGR,L3F docget.jsp?did=6105&prodName=2SA2154MFV
2SA2154MFVGR,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 7210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.95 грн
46+7.32 грн
100+4.51 грн
500+3.07 грн
1000+2.70 грн
2000+2.38 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
TBD62387APG TBD62387AFNG_datasheet_en_20170321.pdf?did=57916&prodName=TBD62387AFNG
TBD62387APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.72 грн
20+116.18 грн
100+89.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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