Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 183 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| TLP5751(LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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| TLP5751H(D4LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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1SS181,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA S-MINICurrent - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: S-Mini Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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1SS181,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA S-MINICurrent - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: S-Mini Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 17840 шт: термін постачання 21-31 дні (днів) |
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1SS187,LF | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SMINICurrent - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: S-Mini Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1SS187,LF | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SMINICurrent - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: S-Mini Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 4pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
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GT20J341,S4X(S | Toshiba Semiconductor and Storage |
Description: IGBT 600V 20A TO-220SISPower - Max: 45 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Part Status: Active Test Condition: 300V, 20A, 33Ohm, 15V Switching Energy: 500µJ (on), 400µJ (off) Td (on/off) @ 25°C: 60ns/240ns Supplier Device Package: TO-220SIS Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Reverse Recovery Time (trr): 90 ns Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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74VHC00FT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHC00FT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 3319 шт: термін постачання 21-31 дні (днів) |
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CMF03(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 900V 500MA MFLATPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 900 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 900 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CMF03(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 900V 500MA MFLATPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 900 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 900 V |
на замовлення 2521 шт: термін постачання 21-31 дні (днів) |
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TPCC8104,L1Q(CM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 20A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TPCC8104,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 20A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 700mW (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP5772H(D4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SONumber of Channels: 1 Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 56ns, 25ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.65V Voltage - Supply: 10V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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TLP5772H(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SONumber of Channels: 1 Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 56ns, 25ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.65V Voltage - Supply: 10V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLP5772H(LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SONumber of Channels: 1 Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 56ns, 25ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 15V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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TLP5772H(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SONumber of Channels: 1 Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 56ns, 25ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 15V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLP5772H(D4LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOInput Type: DC Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 15V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube Number of Channels: 1 Part Status: Active Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 56ns, 25ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
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TLP5772H(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SONumber of Channels: 1 Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 56ns, 25ns Supplier Device Package: 6-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 8mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
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DF2B29FU,H3XHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC USCQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 140W Voltage - Clamping (Max) @ Ipp: 47V Voltage - Breakdown (Min): 26V Bidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 24V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 9pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF2B29FU,H3XHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC USCQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 140W Voltage - Clamping (Max) @ Ipp: 47V Voltage - Breakdown (Min): 26V Bidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 24V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 9pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 3730 шт: термін постачання 21-31 дні (днів) |
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TCR8BM30A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17Voltage Dropout (Max): 0.285V @ 800mA Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: 5-DFNB (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 800mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR8BM30A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.285V @ 800mA Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: 5-DFNB (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 800mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 9970 шт: термін постачання 21-31 дні (днів) |
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CRS30I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 3A S-FLATCurrent - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 82pF @ 10V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRS30I30A(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 3A S-FLATCurrent - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 82pF @ 10V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
на замовлення 2984 шт: термін постачання 21-31 дні (днів) |
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TA78DS10BP(6MB1,FM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 10V 30MA LSTMCurrent - Supply (Max): 1.4 mA Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage Voltage Dropout (Max): 0.3V @ 10mA Voltage - Output (Min/Fixed): 10V Supplier Device Package: LSTM Number of Regulators: 1 Voltage - Input (Max): 33V Current - Quiescent (Iq): 1.4 mA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 30mA Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2061(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 20V 2.5A TSMVoltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 2.5 A Part Status: Active Supplier Device Package: TSM DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A Operating Temperature: 150°C (TJ) Transistor Type: PNP Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Power - Max: 625 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA2061(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 20V 2.5A TSMSupplier Device Package: TSM DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 2.5 A Part Status: Active |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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TTA1452B,S4X | Toshiba Semiconductor and Storage |
Description: TRANS PNP 80V 12A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-220SIS Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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RN1903,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NPPart Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1903,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NPPart Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TLP781(D4-Y-LF6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP2958(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLEROutput Type: Push-Pull, Totem Pole Package / Case: 8-SMD, Gull Wing Packaging: Bulk Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 10ns Supplier Device Package: 8-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 3V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Current - Output / Channel: 25 mA Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TPC6503(TE85L,F,M) | Toshiba Semiconductor and Storage | Description: TRANS NPN 30V 1.5A VS-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RN1301,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RN1301,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 11605 шт: термін постачання 21-31 дні (днів) |
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1SV279,H3F | Toshiba Semiconductor and Storage |
Description: PB-F ESC VARICAP DIODE (HF), IR=Capacitance Ratio: 2.5 Voltage - Peak Reverse (Max): 15 V Supplier Device Package: ESC Capacitance Ratio Condition: C2/C10 Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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1SV279,H3F | Toshiba Semiconductor and Storage |
Description: PB-F ESC VARICAP DIODE (HF), IR=Capacitance Ratio: 2.5 Voltage - Peak Reverse (Max): 15 V Supplier Device Package: ESC Capacitance Ratio Condition: C2/C10 Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 6853 шт: термін постачання 21-31 дні (днів) |
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RN4904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V US6Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN4904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V US6Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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RN1904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN4984,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz, 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN4984,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz, 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2330 шт: термін постачання 21-31 дні (днів) |
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RN1904FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1904FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNPart Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Qualification: AEC-Q101 Grade: Automotive Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN2904,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNMounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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1SV308,L3F | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V ESCCurrent - Max: 50 mA Supplier Device Package: ESC Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1SV308,L3F | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V ESCCurrent - Max: 50 mA Supplier Device Package: ESC Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 6336 шт: термін постачання 21-31 дні (днів) |
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TCR2LN27,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.7V I=200MA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN27,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.7V I=200MA |
на замовлення 6555 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V IOUT=200MAProtection Features: Over Current Voltage Dropout (Max): 0.21V @ 150mA Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| TCR2EN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V IOUT=200MAProtection Features: Over Current Voltage Dropout (Max): 0.21V @ 150mA Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 7550 шт: термін постачання 21-31 дні (днів) |
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TCR2LN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V I=200MAProtection Features: Over Current Voltage Dropout (Max): 0.36V @ 150mA Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 2 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.8V I=200MAProtection Features: Over Current Voltage Dropout (Max): 0.36V @ 150mA Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 2 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4484 шт: термін постачання 21-31 дні (днів) |
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| TCR3UM185A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| TCR3UM185A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
на замовлення 9985 шт: термін постачання 21-31 дні (днів) |
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TCR3UG25A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 300MA 4WCSP-FProtection Features: Inrush Current, Over Current, Thermal Shutdown Voltage Dropout (Max): 0.327V @ 300mA PSRR: 70dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 4-WCSP-F (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR3UG25A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 300MA 4WCSP-FProtection Features: Inrush Current, Over Current, Thermal Shutdown Voltage Dropout (Max): 0.327V @ 300mA Control Features: Enable Voltage - Output (Min/Fixed): 2.5V Supplier Device Package: 4-WCSP-F (0.65x0.65) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) PSRR: 70dB (1kHz) |
на замовлення 13999 шт: термін постачання 21-31 дні (днів) |
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| TLP5751(LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 170.48 грн |
| 10+ | 109.72 грн |
| 125+ | 84.45 грн |
| TLP5751H(D4LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.69 грн |
| 10+ | 90.79 грн |
| 100+ | 65.22 грн |
| 1SS181,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.15 грн |
| 6000+ | 1.86 грн |
| 9000+ | 1.79 грн |
| 15000+ | 1.64 грн |
| 1SS181,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA S-MINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 17840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.31 грн |
| 44+ | 7.10 грн |
| 100+ | 4.02 грн |
| 500+ | 3.07 грн |
| 1000+ | 2.86 грн |
| 1SS187,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 80V 100MA SMINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1SS187,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 80V 100MA SMINI
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: S-Mini
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.72 грн |
| 49+ | 6.26 грн |
| 100+ | 4.67 грн |
| 500+ | 3.43 грн |
| 1000+ | 3.01 грн |
| GT20J341,S4X(S |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 20A TO-220SIS
Power - Max: 45 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Test Condition: 300V, 20A, 33Ohm, 15V
Switching Energy: 500µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 60ns/240ns
Supplier Device Package: TO-220SIS
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: IGBT 600V 20A TO-220SIS
Power - Max: 45 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Active
Test Condition: 300V, 20A, 33Ohm, 15V
Switching Energy: 500µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 60ns/240ns
Supplier Device Package: TO-220SIS
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.46 грн |
| 50+ | 115.44 грн |
| 74VHC00FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 9.31 грн |
| 74VHC00FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 3319 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 22.20 грн |
| 21+ | 15.12 грн |
| 25+ | 13.41 грн |
| 100+ | 10.85 грн |
| 250+ | 10.02 грн |
| 500+ | 9.52 грн |
| 1000+ | 8.96 грн |
| CMF03(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CMF03(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
на замовлення 2521 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.82 грн |
| 12+ | 25.50 грн |
| 100+ | 18.27 грн |
| 500+ | 13.00 грн |
| 1000+ | 11.65 грн |
| TPCC8104,L1Q(CM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| TPCC8104,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| TLP5772H(D4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 113.08 грн |
| TLP5772H(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP5772H(LF4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 173.65 грн |
| 10+ | 120.57 грн |
| 125+ | 91.08 грн |
| TLP5772H(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
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од. на суму грн.
| TLP5772H(D4LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 173.65 грн |
| 10+ | 120.57 грн |
| TLP5772H(E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 56ns, 25ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 8mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 113.08 грн |
| DF2B29FU,H3XHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 24VWM 47VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.50 грн |
| DF2B29FU,H3XHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 24VWM 47VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 3730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.24 грн |
| 27+ | 11.45 грн |
| 100+ | 7.38 грн |
| 500+ | 5.68 грн |
| 1000+ | 5.20 грн |
| TCR8BM30A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Voltage Dropout (Max): 0.285V @ 800mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Voltage Dropout (Max): 0.285V @ 800mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 9.17 грн |
| TCR8BM30A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 9970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.88 грн |
| 10+ | 33.37 грн |
| 25+ | 27.55 грн |
| 100+ | 19.68 грн |
| 250+ | 16.64 грн |
| 500+ | 14.77 грн |
| 1000+ | 12.98 грн |
| 2500+ | 11.31 грн |
| CRS30I30A(TE85L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CRS30I30A(TE85L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.85 грн |
| 11+ | 29.17 грн |
| 100+ | 17.49 грн |
| 500+ | 15.20 грн |
| 1000+ | 10.34 грн |
| TA78DS10BP(6MB1,FM |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 30MA LSTM
Current - Supply (Max): 1.4 mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Voltage Dropout (Max): 0.3V @ 10mA
Voltage - Output (Min/Fixed): 10V
Supplier Device Package: LSTM
Number of Regulators: 1
Voltage - Input (Max): 33V
Current - Quiescent (Iq): 1.4 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 30mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: IC REG LINEAR 10V 30MA LSTM
Current - Supply (Max): 1.4 mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Voltage Dropout (Max): 0.3V @ 10mA
Voltage - Output (Min/Fixed): 10V
Supplier Device Package: LSTM
Number of Regulators: 1
Voltage - Input (Max): 33V
Current - Quiescent (Iq): 1.4 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 30mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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| 2SA2061(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A TSM
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: TSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Power - Max: 625 mW
Description: TRANS PNP 20V 2.5A TSM
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Supplier Device Package: TSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Power - Max: 625 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.40 грн |
| 2SA2061(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A TSM
Supplier Device Package: TSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
Description: TRANS PNP 20V 2.5A TSM
Supplier Device Package: TSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Active
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.03 грн |
| 13+ | 25.27 грн |
| 100+ | 16.14 грн |
| 500+ | 11.46 грн |
| 1000+ | 10.27 грн |
| TTA1452B,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220SIS
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220SIS
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 193.47 грн |
| 10+ | 120.11 грн |
| RN1903,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.87 грн |
| RN1903,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.37 грн |
| 16+ | 19.09 грн |
| 100+ | 11.42 грн |
| 500+ | 9.92 грн |
| 1000+ | 6.75 грн |
| TLP781(D4-Y-LF6,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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| TLP2958(D4-TP1,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Current - Output / Channel: 25 mA
Number of Channels: 1
Description: PHOTOCOUPLER
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Current - Output / Channel: 25 mA
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| TPC6503(TE85L,F,M) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 1.5A VS-6
Description: TRANS NPN 30V 1.5A VS-6
товару немає в наявності
В кошику
од. на суму грн.
| RN1301,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.87 грн |
| 6000+ | 4.23 грн |
| 9000+ | 3.99 грн |
| RN1301,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 11605 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.99 грн |
| 23+ | 13.74 грн |
| 100+ | 8.61 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.31 грн |
| 1SV279,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F ESC VARICAP DIODE (HF), IR=
Capacitance Ratio: 2.5
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C2/C10
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: PB-F ESC VARICAP DIODE (HF), IR=
Capacitance Ratio: 2.5
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C2/C10
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 5.88 грн |
| 1SV279,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F ESC VARICAP DIODE (HF), IR=
Capacitance Ratio: 2.5
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C2/C10
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: PB-F ESC VARICAP DIODE (HF), IR=
Capacitance Ratio: 2.5
Voltage - Peak Reverse (Max): 15 V
Supplier Device Package: ESC
Capacitance Ratio Condition: C2/C10
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 6853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 19+ | 16.95 грн |
| 100+ | 10.63 грн |
| 500+ | 7.43 грн |
| 1000+ | 6.60 грн |
| 2000+ | 5.90 грн |
| RN4904,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN4904,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.37 грн |
| 21+ | 14.81 грн |
| 100+ | 9.31 грн |
| 500+ | 6.49 грн |
| 1000+ | 5.76 грн |
| RN1904,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.61 грн |
| RN1904,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.96 грн |
| 15+ | 20.85 грн |
| 100+ | 14.20 грн |
| 500+ | 10.00 грн |
| 1000+ | 7.50 грн |
| RN4984,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN4984,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 19.03 грн |
| 26+ | 12.06 грн |
| 100+ | 8.10 грн |
| 500+ | 5.85 грн |
| 1000+ | 5.26 грн |
| RN1904FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 6.57 грн |
| 8000+ | 5.97 грн |
| RN1904FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
Description: AUTO AEC-Q TR NPNX2 Q1BSR=47KOHM
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.13 грн |
| 15+ | 21.46 грн |
| 100+ | 13.35 грн |
| 500+ | 8.57 грн |
| 1000+ | 6.59 грн |
| 2000+ | 5.93 грн |
| RN2904,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2904,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 19.03 грн |
| 26+ | 12.06 грн |
| 100+ | 8.10 грн |
| 500+ | 5.85 грн |
| 1000+ | 5.26 грн |
| 1SV308,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V ESC
Current - Max: 50 mA
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 30V ESC
Current - Max: 50 mA
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| 1SV308,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V ESC
Current - Max: 50 mA
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: RF DIODE PIN 30V ESC
Current - Max: 50 mA
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 6336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 14+ | 22.53 грн |
| 25+ | 19.73 грн |
| 100+ | 11.99 грн |
| 250+ | 9.92 грн |
| 500+ | 7.94 грн |
| 1000+ | 5.99 грн |
| 2500+ | 5.21 грн |
| TCR2LN27,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V I=200MA
Description: LDO REG VOUT=2.7V I=200MA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN27,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.7V I=200MA
Description: LDO REG VOUT=2.7V I=200MA
на замовлення 6555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2EN28,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V IOUT=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.21V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: LDO REG VOUT=2.8V IOUT=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.21V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2EN28,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V IOUT=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.21V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: LDO REG VOUT=2.8V IOUT=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.21V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 7550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.13 грн |
| 14+ | 22.07 грн |
| 25+ | 19.88 грн |
| 100+ | 12.90 грн |
| 250+ | 10.86 грн |
| 500+ | 8.83 грн |
| 1000+ | 6.68 грн |
| 2500+ | 6.01 грн |
| 5000+ | 5.68 грн |
| TCR2LN28,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V I=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.36V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: LDO REG VOUT=2.8V I=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.36V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN28,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.8V I=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.36V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: LDO REG VOUT=2.8V I=200MA
Protection Features: Over Current
Voltage Dropout (Max): 0.36V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 16+ | 19.93 грн |
| 25+ | 18.02 грн |
| 100+ | 11.67 грн |
| 250+ | 9.84 грн |
| 500+ | 7.99 грн |
| 1000+ | 6.05 грн |
| 2500+ | 5.44 грн |
| TCR3UM185A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3UM185A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
на замовлення 9985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.47 грн |
| 12+ | 26.65 грн |
| 25+ | 24.04 грн |
| 100+ | 15.59 грн |
| 250+ | 13.13 грн |
| 500+ | 10.67 грн |
| 1000+ | 8.07 грн |
| 2500+ | 7.26 грн |
| 5000+ | 6.86 грн |
| TCR3UG25A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 9.05 грн |
| TCR3UG25A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
PSRR: 70dB (1kHz)
Description: IC REG LINEAR 2.5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.327V @ 300mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
PSRR: 70dB (1kHz)
на замовлення 13999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.30 грн |
| 12+ | 26.42 грн |
| 25+ | 24.19 грн |
| 100+ | 16.89 грн |
| 250+ | 15.31 грн |
| 500+ | 12.67 грн |
| 1000+ | 9.35 грн |
| 2500+ | 8.57 грн |





















