Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13451) > Сторінка 184 з 225

Обрати Сторінку:   [  << Попередня Сторінка ]  1 22 44 66 88 110 132 154 176 179 180 181 182 183 184 185 186 187 188 189 198 220 225  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
TLP719F(D4-TP,F) Toshiba Semiconductor and Storage Description: OPTOISO 5KV 1CH TRANS 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 6-SDIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLP719(D4FA-TPS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 6-SDIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику  од. на суму  грн.
SSM6K513NU,LF SSM6K513NU,LF Toshiba Semiconductor and Storage SSM6K513NU.pdf Description: MOSFET N-CH 30V 15A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+12.26 грн
6000+10.81 грн
9000+10.30 грн
15000+9.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6K513NU,LF SSM6K513NU,LF Toshiba Semiconductor and Storage SSM6K513NU.pdf Description: MOSFET N-CH 30V 15A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
на замовлення 25991 шт:
термін постачання 21-31 дні (днів)
7+52.40 грн
10+31.42 грн
100+20.20 грн
500+14.41 грн
1000+12.95 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMS05(TE12L,Q,M) CMS05(TE12L,Q,M) Toshiba Semiconductor and Storage CMS05_datasheet_en_20190409.pdf?did=3136&prodName=CMS05 Description: DIODE SCHOTTKY 30V 5A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 800 µA @ 30 V
на замовлення 142004 шт:
термін постачання 21-31 дні (днів)
6+62.72 грн
10+43.35 грн
100+32.56 грн
500+23.71 грн
1000+21.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TLP3556(F) TLP3556(F) Toshiba Semiconductor and Storage TLP3556_datasheet_en_20200325.pdf?did=11952&prodName=TLP3556 Description: SSR RELAY SPST-NO 1A 0-100V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 700 mOhms
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
2+234.20 грн
10+211.76 грн
25+188.19 грн
50+167.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP3543A(TP1,F TLP3543A(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=60317&prodName=TLP3543A Description: SSR RELAY SPST-NO 5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 40 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
товару немає в наявності
В кошику  од. на суму  грн.
TLP3543A(TP1,F TLP3543A(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=60317&prodName=TLP3543A Description: SSR RELAY SPST-NO 5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 40 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
2+286.60 грн
10+241.35 грн
25+228.67 грн
50+206.05 грн
100+197.83 грн
250+187.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP241A(D4,TP1,F TLP241A(D4,TP1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
товару немає в наявності
В кошику  од. на суму  грн.
TK380A65Y,S4X TK380A65Y,S4X Toshiba Semiconductor and Storage docget.jsp?did=53848&prodName=TK380A65Y Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
3+145.28 грн
10+125.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK10A50W,S5X TK10A50W,S5X Toshiba Semiconductor and Storage docget.jsp?did=29961&prodName=TK10A50W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
2+180.21 грн
50+85.18 грн
100+76.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TPCP8407,LF TPCP8407,LF Toshiba Semiconductor and Storage TPCP8407_datasheet_en_20160224.pdf?did=14578&prodName=TPCP8407 Description: MOSFET N/P-CH 40V 5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TPCP8407,LF TPCP8407,LF Toshiba Semiconductor and Storage TPCP8407_datasheet_en_20160224.pdf?did=14578&prodName=TPCP8407 Description: MOSFET N/P-CH 40V 5A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
4+82.56 грн
10+49.46 грн
100+32.48 грн
500+23.60 грн
1000+21.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP5774H(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+190.53 грн
10+122.55 грн
125+94.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774H(TP,E TLP5774H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+72.16 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP5774H(D4LF4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+190.53 грн
10+122.55 грн
125+94.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774H(TP4,E TLP5774H(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5774H(D4,E TLP5774H(D4,E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+177.04 грн
10+113.45 грн
125+87.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774H(E TLP5774H(E Toshiba Semiconductor and Storage docget.jsp?did=70657&prodName=TLP5774H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
2+177.04 грн
10+113.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5771H(TP4,E TLP5771H(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70655&prodName=TLP5771H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+73.56 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP5771H(D4,E Toshiba Semiconductor and Storage docget.jsp?did=70655&prodName=TLP5771H Description: GATE DRIVE COUPLER; 1A; HIGH TEM
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(TP,E TLP5771H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70655&prodName=TLP5771H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(LF4,E Toshiba Semiconductor and Storage TLP5771H_datasheet_en_20210402.pdf?did=70655&prodName=TLP5771H Description: GATE DRIVE COUPLER; 1A; WIDER LE
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(E Toshiba Semiconductor and Storage TLP5771H_datasheet_en_20210402.pdf?did=70655&prodName=TLP5771H Description: GATE DRIVE COUPLER; 1A; HIGH TEM
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(D4LF4,E Toshiba Semiconductor and Storage TLP5771H_datasheet_en_20210402.pdf?did=70655&prodName=TLP5771H Description: GATE DRIVE COUPLER; 1A; WIDER LE
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5754H(LF4,E TLP5754H(LF4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
2+165.13 грн
10+103.28 грн
100+74.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5751H(LF4,E Toshiba Semiconductor and Storage TLP5751H_datasheet_en_20200901.pdf?did=66186&prodName=TLP5751H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
3+146.87 грн
10+90.90 грн
100+65.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5754H(D4LF4,E TLP5754H(D4LF4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
3+130.99 грн
10+81.88 грн
125+57.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5751(LF4,E Toshiba Semiconductor and Storage TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+170.69 грн
10+109.86 грн
125+84.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5751H(D4LF4,E Toshiba Semiconductor and Storage TLP5751H_datasheet_en_20200901.pdf?did=66186&prodName=TLP5751H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
3+146.87 грн
10+90.90 грн
100+65.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1SS181,LF 1SS181,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3263 Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+2.15 грн
6000+1.87 грн
9000+1.80 грн
15000+1.64 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1SS181,LF 1SS181,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3263 Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 17840 шт:
термін постачання 21-31 дні (днів)
31+10.32 грн
44+7.11 грн
100+4.03 грн
500+3.07 грн
1000+2.86 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
1SS187,LF 1SS187,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3268 Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товару немає в наявності
В кошику  од. на суму  грн.
1SS187,LF 1SS187,LF Toshiba Semiconductor and Storage datasheet_en_20221128.pdf?did=3268 Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
37+8.73 грн
49+6.27 грн
100+4.68 грн
500+3.43 грн
1000+3.01 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
GT20J341,S4X(S Toshiba Semiconductor and Storage GT20J341_datasheet_en_20140107.pdf?did=12743&prodName=GT20J341 Description: DISCRETE IGBT TRANSISTOR TO-220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/240ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 300V, 20A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 45 W
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
2+163.54 грн
10+141.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
74VHC00FT 74VHC00FT Toshiba Semiconductor and Storage docget.jsp?did=14032&prodName=74VHC00FT Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+10.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74VHC00FT 74VHC00FT Toshiba Semiconductor and Storage docget.jsp?did=14032&prodName=74VHC00FT Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 4277 шт:
термін постачання 21-31 дні (днів)
14+23.82 грн
20+15.82 грн
25+14.04 грн
100+11.35 грн
250+10.48 грн
500+9.96 грн
1000+9.37 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
CMF03(TE12L,Q,M) CMF03(TE12L,Q,M) Toshiba Semiconductor and Storage CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03 Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
товару немає в наявності
В кошику  од. на суму  грн.
CMF03(TE12L,Q,M) CMF03(TE12L,Q,M) Toshiba Semiconductor and Storage CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03 Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
на замовлення 2521 шт:
термін постачання 21-31 дні (днів)
8+42.87 грн
12+25.53 грн
100+18.29 грн
500+13.01 грн
1000+11.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TPCC8104,L1Q(CM TPCC8104,L1Q(CM Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8104,L1Q TPCC8104,L1Q Toshiba Semiconductor and Storage docget.jsp?did=6090&prodName=TPCC8104 Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772H(D4,E TLP5772H(D4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
2+192.92 грн
10+121.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772H(TP4,E TLP5772H(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772H(LF4,E TLP5772H(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+204.03 грн
10+129.28 грн
125+92.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772H(TP,E TLP5772H(TP,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772H(D4LF4,E TLP5772H(D4LF4,E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
2+163.54 грн
10+103.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772H(E TLP5772H(E Toshiba Semiconductor and Storage docget.jsp?did=70656&prodName=TLP5772H Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
2+192.92 грн
10+121.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DF2B29FU,H3XHF DF2B29FU,H3XHF Toshiba Semiconductor and Storage DF2B29FU_datasheet_en_20210625.pdf?did=29929&prodName=DF2B29FU Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DF2B29FU,H3XHF DF2B29FU,H3XHF Toshiba Semiconductor and Storage DF2B29FU_datasheet_en_20210625.pdf?did=29929&prodName=DF2B29FU Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4515 шт:
термін постачання 21-31 дні (днів)
14+23.82 грн
22+14.22 грн
100+8.90 грн
500+6.19 грн
1000+5.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TCR8BM30A,L3F TCR8BM30A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+9.18 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR8BM30A,L3F TCR8BM30A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9970 шт:
термін постачання 21-31 дні (днів)
6+57.95 грн
10+33.41 грн
25+27.58 грн
100+19.71 грн
250+16.66 грн
500+14.79 грн
1000+13.00 грн
2500+11.33 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CRS30I30A(TE85L,QM CRS30I30A(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=14967&prodName=CRS30I30A Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
CRS30I30A(TE85L,QM CRS30I30A(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=14967&prodName=CRS30I30A Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
9+38.90 грн
11+29.20 грн
100+17.51 грн
500+15.22 грн
1000+10.35 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TA78DS10BP(6MB1,FM TA78DS10BP(6MB1,FM Toshiba Semiconductor and Storage TA78DSxxBP_05CP_2009-09-30.pdf Description: IC REG LINEAR 10V 30MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 30mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.4 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Current - Supply (Max): 1.4 mA
товару немає в наявності
В кошику  од. на суму  грн.
2SA2061(TE85L,F) 2SA2061(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20449&prodName=2SA2061 Description: TRANS PNP 20V 2.5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SA2061(TE85L,F) 2SA2061(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20449&prodName=2SA2061 Description: TRANS PNP 20V 2.5A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
8+43.66 грн
12+25.92 грн
100+16.57 грн
500+11.77 грн
1000+10.55 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TTA1452B,S4X TTA1452B,S4X Toshiba Semiconductor and Storage docget.jsp?did=13850&prodName=TTA1452B&returnFlg=false Description: TRANS PNP 80V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220SIS
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
2+193.71 грн
10+120.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RN1903,LXHF(CT RN1903,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1903,LXHF(CT RN1903,LXHF(CT Toshiba Semiconductor and Storage RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901 Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
13+25.40 грн
16+19.11 грн
100+11.43 грн
500+9.94 грн
1000+6.76 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
TLP781(D4-Y-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
товару немає в наявності
В кошику  од. на суму  грн.
TLP719F(D4-TP,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH TRANS 6-SDIP GW
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 6-SDIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLP719(D4FA-TPS,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 6-SDIP Gull Wing
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товару немає в наявності
В кошику  од. на суму  грн.
SSM6K513NU,LF SSM6K513NU.pdf
SSM6K513NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.26 грн
6000+10.81 грн
9000+10.30 грн
15000+9.13 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6K513NU,LF SSM6K513NU.pdf
SSM6K513NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 15A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
на замовлення 25991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.40 грн
10+31.42 грн
100+20.20 грн
500+14.41 грн
1000+12.95 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMS05(TE12L,Q,M) CMS05_datasheet_en_20190409.pdf?did=3136&prodName=CMS05
CMS05(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 5A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 10V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 800 µA @ 30 V
на замовлення 142004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.72 грн
10+43.35 грн
100+32.56 грн
500+23.71 грн
1000+21.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TLP3556(F) TLP3556_datasheet_en_20200325.pdf?did=11952&prodName=TLP3556
TLP3556(F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-100V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 700 mOhms
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.20 грн
10+211.76 грн
25+188.19 грн
50+167.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP3543A(TP1,F docget.jsp?did=60317&prodName=TLP3543A
TLP3543A(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 40 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
товару немає в наявності
В кошику  од. на суму  грн.
TLP3543A(TP1,F docget.jsp?did=60317&prodName=TLP3543A
TLP3543A(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 5 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 40 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.60 грн
10+241.35 грн
25+228.67 грн
50+206.05 грн
100+197.83 грн
250+187.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP241A(D4,TP1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(D4,TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
товару немає в наявності
В кошику  од. на суму  грн.
TK380A65Y,S4X docget.jsp?did=53848&prodName=TK380A65Y
TK380A65Y,S4X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.28 грн
10+125.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK10A50W,S5X docget.jsp?did=29961&prodName=TK10A50W
TK10A50W,S5X
Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.21 грн
50+85.18 грн
100+76.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TPCP8407,LF TPCP8407_datasheet_en_20160224.pdf?did=14578&prodName=TPCP8407
TPCP8407,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TPCP8407,LF TPCP8407_datasheet_en_20160224.pdf?did=14578&prodName=TPCP8407
TPCP8407,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 40V 5A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.56 грн
10+49.46 грн
100+32.48 грн
500+23.60 грн
1000+21.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLP5774H(LF4,E docget.jsp?did=70657&prodName=TLP5774H
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.53 грн
10+122.55 грн
125+94.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774H(TP,E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+72.16 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP5774H(D4LF4,E docget.jsp?did=70657&prodName=TLP5774H
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.53 грн
10+122.55 грн
125+94.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774H(TP4,E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(TP4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5774H(D4,E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(D4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.04 грн
10+113.45 грн
125+87.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774H(E docget.jsp?did=70657&prodName=TLP5774H
TLP5774H(E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+177.04 грн
10+113.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5771H(TP4,E docget.jsp?did=70655&prodName=TLP5771H
TLP5771H(TP4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+73.56 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP5771H(D4,E docget.jsp?did=70655&prodName=TLP5771H
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 1A; HIGH TEM
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(TP,E docget.jsp?did=70655&prodName=TLP5771H
TLP5771H(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(LF4,E TLP5771H_datasheet_en_20210402.pdf?did=70655&prodName=TLP5771H
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 1A; WIDER LE
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(E TLP5771H_datasheet_en_20210402.pdf?did=70655&prodName=TLP5771H
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 1A; HIGH TEM
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5771H(D4LF4,E TLP5771H_datasheet_en_20210402.pdf?did=70655&prodName=TLP5771H
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 1A; WIDER LE
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Capacitive Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5754H(LF4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5754H(LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.13 грн
10+103.28 грн
100+74.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5751H(LF4,E TLP5751H_datasheet_en_20200901.pdf?did=66186&prodName=TLP5751H
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.87 грн
10+90.90 грн
100+65.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5754H(D4LF4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5754H(D4LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.99 грн
10+81.88 грн
125+57.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5751(LF4,E TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.69 грн
10+109.86 грн
125+84.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5751H(D4LF4,E TLP5751H_datasheet_en_20200901.pdf?did=66186&prodName=TLP5751H
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.87 грн
10+90.90 грн
100+65.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1SS181,LF datasheet_en_20221128.pdf?did=3263
1SS181,LF
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.15 грн
6000+1.87 грн
9000+1.80 грн
15000+1.64 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1SS181,LF datasheet_en_20221128.pdf?did=3263
1SS181,LF
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 17840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.32 грн
44+7.11 грн
100+4.03 грн
500+3.07 грн
1000+2.86 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
1SS187,LF datasheet_en_20221128.pdf?did=3268
1SS187,LF
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товару немає в наявності
В кошику  од. на суму  грн.
1SS187,LF datasheet_en_20221128.pdf?did=3268
1SS187,LF
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.73 грн
49+6.27 грн
100+4.68 грн
500+3.43 грн
1000+3.01 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
GT20J341,S4X(S GT20J341_datasheet_en_20140107.pdf?did=12743&prodName=GT20J341
Виробник: Toshiba Semiconductor and Storage
Description: DISCRETE IGBT TRANSISTOR TO-220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/240ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 300V, 20A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 45 W
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+163.54 грн
10+141.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
74VHC00FT docget.jsp?did=14032&prodName=74VHC00FT
74VHC00FT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+10.04 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74VHC00FT docget.jsp?did=14032&prodName=74VHC00FT
74VHC00FT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 4277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.82 грн
20+15.82 грн
25+14.04 грн
100+11.35 грн
250+10.48 грн
500+9.96 грн
1000+9.37 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
CMF03(TE12L,Q,M) CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03
CMF03(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
товару немає в наявності
В кошику  од. на суму  грн.
CMF03(TE12L,Q,M) CMF03_datasheet_en_20190307.pdf?did=10493&prodName=CMF03
CMF03(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 900V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 900 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 900 V
на замовлення 2521 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.87 грн
12+25.53 грн
100+18.29 грн
500+13.01 грн
1000+11.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TPCC8104,L1Q(CM
TPCC8104,L1Q(CM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8104,L1Q docget.jsp?did=6090&prodName=TPCC8104
TPCC8104,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772H(D4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4,E
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.92 грн
10+121.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772H(TP4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(TP4,E
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772H(LF4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.03 грн
10+129.28 грн
125+92.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772H(TP,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772H(D4LF4,E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(D4LF4,E
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; WIDER
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+163.54 грн
10+103.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772H(E docget.jsp?did=70656&prodName=TLP5772H
TLP5772H(E
Виробник: Toshiba Semiconductor and Storage
Description: GATE DRIVE COUPLER; 2.5A; HIGH T
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Number of Channels: 1
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.92 грн
10+121.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DF2B29FU,H3XHF DF2B29FU_datasheet_en_20210625.pdf?did=29929&prodName=DF2B29FU
DF2B29FU,H3XHF
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DF2B29FU,H3XHF DF2B29FU_datasheet_en_20210625.pdf?did=29929&prodName=DF2B29FU
DF2B29FU,H3XHF
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.82 грн
22+14.22 грн
100+8.90 грн
500+6.19 грн
1000+5.48 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TCR8BM30A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM30A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+9.18 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TCR8BM30A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM30A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.0V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.285V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.95 грн
10+33.41 грн
25+27.58 грн
100+19.71 грн
250+16.66 грн
500+14.79 грн
1000+13.00 грн
2500+11.33 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CRS30I30A(TE85L,QM docget.jsp?did=14967&prodName=CRS30I30A
CRS30I30A(TE85L,QM
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
CRS30I30A(TE85L,QM docget.jsp?did=14967&prodName=CRS30I30A
CRS30I30A(TE85L,QM
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.90 грн
11+29.20 грн
100+17.51 грн
500+15.22 грн
1000+10.35 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TA78DS10BP(6MB1,FM TA78DSxxBP_05CP_2009-09-30.pdf
TA78DS10BP(6MB1,FM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 30MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 30mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.4 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: LSTM
Voltage - Output (Min/Fixed): 10V
Voltage Dropout (Max): 0.3V @ 10mA
Protection Features: Over Current, Over Temperature, Over Voltage, Transient Voltage
Current - Supply (Max): 1.4 mA
товару немає в наявності
В кошику  од. на суму  грн.
2SA2061(TE85L,F) docget.jsp?did=20449&prodName=2SA2061
2SA2061(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.65 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
2SA2061(TE85L,F) docget.jsp?did=20449&prodName=2SA2061
2SA2061(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.66 грн
12+25.92 грн
100+16.57 грн
500+11.77 грн
1000+10.55 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TTA1452B,S4X docget.jsp?did=13850&prodName=TTA1452B&returnFlg=false
TTA1452B,S4X
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 6A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220SIS
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.71 грн
10+120.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RN1903,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1903,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1903,LXHF(CT RN1901_datasheet_en_20210824.pdf?did=18823&prodName=RN1901
RN1903,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.40 грн
16+19.11 грн
100+11.43 грн
500+9.94 грн
1000+6.76 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
TLP781(D4-Y-LF6,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 22 44 66 88 110 132 154 176 179 180 181 182 183 184 185 186 187 188 189 198 220 225  [ Наступна Сторінка >> ]