Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13058) > Сторінка 184 з 218
Фото | Назва | Виробник | Інформація |
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TK170V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 18A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V |
на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
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TK6R7P06PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 60V 46A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TK6R7P06PL,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 60V 46A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V |
на замовлення 25753 шт: термін постачання 21-31 дні (днів) |
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TLP5752H(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SO Packaging: Bulk Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
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TLP5752H(D4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SO Packaging: Bulk Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
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TLP5752H(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SO Packaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
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TLP2958(D4-MBT1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Push-Pull, Totem Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 15ns, 10ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 1 Current - Output / Channel: 25 mA |
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TB67H401FTG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHEDMOTORDRIVERIC,1-CHANNEL50 Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: PWM Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: NMOS, PMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67H401FTG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHEDMOTORDRIVERIC,1-CHANNEL50 Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: PWM Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: NMOS, PMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK55S10N1,LQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 100V 55A DPAK |
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TK090E65Z,S1X | Toshiba Semiconductor and Storage |
Description: 650V DTMOS VI TO-220 90MOHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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TCR2LN36,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.6V I=200MA |
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TCR2LN36,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=3.6V I=200MA |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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TCR2LN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.15V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN115,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.15V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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74HC4066D | Toshiba Semiconductor and Storage |
Description: IC MUX QUAD 1:1 80OHM 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 80Ohm -3db Bandwidth: 200MHz Supplier Device Package: 14-SOIC Voltage - Supply, Single (V+): 2V ~ 12V Crosstalk: -60dB @ 1MHz Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm (Typ) Switch Time (Ton, Toff) (Max): 12ns, 12ns Channel Capacitance (CS(off), CD(off)): 3pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 4 |
на замовлення 13499 шт: термін постачання 21-31 дні (днів) |
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TB67H451AFNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVER IC, 50V, 3. Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3.5A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge Applications: General Purpose Technology: BiCDMOS Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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TB67H451AFNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVER IC, 50V, 3. Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3.5A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge Applications: General Purpose Technology: BiCDMOS Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 9636 шт: термін постачання 21-31 дні (днів) |
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TC7WH00FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 2CH 2-INP 8SSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
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TC7WH241FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V SM8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 8-SSOP |
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TK10E80W,S1X | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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DF2B36FU,H3XHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: Automotive Capacitance @ Frequency: 6.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 28V (Max) Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 32V Voltage - Clamping (Max) @ Ipp: 60V Power - Peak Pulse: 150W Power Line Protection: No |
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DF2B36FU,H3XHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: Automotive Capacitance @ Frequency: 6.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 28V (Max) Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 32V Voltage - Clamping (Max) @ Ipp: 60V Power - Peak Pulse: 150W Power Line Protection: No |
на замовлення 3190 шт: термін постачання 21-31 дні (днів) |
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74LCX573FT | Toshiba Semiconductor and Storage |
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Latch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 8ns Supplier Device Package: 20-TSSOPB Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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74LCX573FT | Toshiba Semiconductor and Storage |
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Latch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 8ns Supplier Device Package: 20-TSSOPB Part Status: Active |
на замовлення 19858 шт: термін постачання 21-31 дні (днів) |
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SSM6L12TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 500MA UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UF6 Part Status: Active |
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SSM6L12TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 500MA UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UF6 Part Status: Active |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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TLP9121A(KBDGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(MBHAGBTLF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
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TLP9121A(YSKGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(NCNGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(FD-GBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(BYDGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(OGIGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(ASTGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(HNEGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(CK-GBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(PSDGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP9121A(TOYOGTL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk |
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TLP9121A(MURGBTL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
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TLP9121A(PASGBTL,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
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TLP701H(GEHC,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 200mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Part Status: Last Time Buy Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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TLP701HF(D4MBSTP,F | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Part Status: Last Time Buy Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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TLP701H(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 200mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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TLP701H(D4-MBSTP,F | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 200mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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TLP701HF(D4-TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Part Status: Last Time Buy Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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TLP701HF(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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TLP701HF(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP Packaging: Bulk Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 200mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 5000Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SDIP Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Pulse Width Distortion (Max): 500ns Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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1SS226,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
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1SS226,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 1131 шт: термін постачання 21-31 дні (днів) |
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TCR3DG11,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.1V 300MA 4WCSPE Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.1V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.65V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
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TCR3DG11,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.1V 300MA 4WCSPE Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.1V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.65V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 4893 шт: термін постачання 21-31 дні (днів) |
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TC4S66F,LF | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST-NO X 1 160OHM SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm -3db Bandwidth: 30MHz Supplier Device Package: SMV Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TC4S66F,LF | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST-NO X 1 160OHM SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm -3db Bandwidth: 30MHz Supplier Device Package: SMV Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 1 |
на замовлення 19631 шт: термін постачання 21-31 дні (днів) |
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TPD2017FN,L1F(S | Toshiba Semiconductor and Storage |
Description: INTELLIGENT PWR SWITCH, 8CH LOW Packaging: Tape & Reel (TR) Package / Case: 24-SOP (0.236", 6.00mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Non-Inverting Voltage - Load: 0.8V ~ 2V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 24-SSOP Fault Protection: Current Limiting (Adjustable), Over Temperature |
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TPD2017FN,L1F(S | Toshiba Semiconductor and Storage |
Description: INTELLIGENT PWR SWITCH, 8CH LOW Packaging: Cut Tape (CT) Package / Case: 24-SOP (0.236", 6.00mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1Ohm Input Type: Non-Inverting Voltage - Load: 0.8V ~ 2V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 24-SSOP Fault Protection: Current Limiting (Adjustable), Over Temperature |
на замовлення 1083 шт: термін постачання 21-31 дні (днів) |
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TPD2015FN,L1F(S | Toshiba Semiconductor and Storage |
Description: INTELLIGENT PWR SWITCH, 8CH HIGH Packaging: Tape & Reel (TR) Package / Case: 30-LSSOP (0.220", 5.60mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 900mOhm Input Type: Non-Inverting Voltage - Supply (Vcc/Vdd): 8V ~ 40V Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 30-SSOP Fault Protection: Current Limiting (Adjustable), Over Temperature |
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TPD2015FN,L1F(S | Toshiba Semiconductor and Storage |
Description: INTELLIGENT PWR SWITCH, 8CH HIGH Packaging: Cut Tape (CT) Package / Case: 30-LSSOP (0.220", 5.60mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 900mOhm Input Type: Non-Inverting Voltage - Supply (Vcc/Vdd): 8V ~ 40V Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 30-SSOP Fault Protection: Current Limiting (Adjustable), Over Temperature |
на замовлення 201 шт: термін постачання 21-31 дні (днів) |
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GT50N322A | Toshiba Semiconductor and Storage |
Description: IGBT 1000V 50A TO3P Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 800 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Supplier Device Package: TO-3P(N) Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 156 W |
на замовлення 97 шт: термін постачання 21-31 дні (днів) |
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TA58M08S(LS2FJT,AQ | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 8V 500MA TO220NIS |
товар відсутній |
TK170V65Z,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 231.82 грн |
10+ | 187.42 грн |
100+ | 151.62 грн |
500+ | 126.48 грн |
1000+ | 108.29 грн |
TK6R7P06PL,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 24.96 грн |
5000+ | 22.89 грн |
12500+ | 21.84 грн |
TK6R7P06PL,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
на замовлення 25753 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.66 грн |
10+ | 47.57 грн |
100+ | 36.98 грн |
500+ | 29.42 грн |
1000+ | 23.96 грн |
TLP5752H(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
товар відсутній
TLP5752H(D4-TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
товар відсутній
TLP5752H(E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
товар відсутній
TLP2958(D4-MBT1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
товар відсутній
TB67H401FTG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHEDMOTORDRIVERIC,1-CHANNEL50
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BRUSHEDMOTORDRIVERIC,1-CHANNEL50
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 173.13 грн |
TB67H401FTG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHEDMOTORDRIVERIC,1-CHANNEL50
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BRUSHEDMOTORDRIVERIC,1-CHANNEL50
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: NMOS, PMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 348.09 грн |
10+ | 301.26 грн |
25+ | 284.79 грн |
100+ | 231.62 грн |
250+ | 219.74 грн |
500+ | 197.17 грн |
1000+ | 163.57 грн |
TK55S10N1,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Description: MOSFET N-CH 100V 55A DPAK
товар відсутній
TK090E65Z,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: 650V DTMOS VI TO-220 90MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Description: 650V DTMOS VI TO-220 90MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 73 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 369.75 грн |
10+ | 319.76 грн |
TCR2LN36,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.6V I=200MA
Description: LDO REG VOUT=3.6V I=200MA
товар відсутній
TCR2LN36,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.6V I=200MA
Description: LDO REG VOUT=3.6V I=200MA
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26 грн |
15+ | 18.85 грн |
25+ | 17.02 грн |
100+ | 11.06 грн |
250+ | 9.31 грн |
500+ | 7.56 грн |
1000+ | 5.72 грн |
2500+ | 5.15 грн |
5000+ | 4.86 грн |
TCR2LN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.15V I=200MA
Description: LDO REG VOUT=1.15V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 4.99 грн |
TCR2LN115,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.15V I=200MA
Description: LDO REG VOUT=1.15V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26 грн |
15+ | 18.85 грн |
25+ | 17.02 грн |
100+ | 11.06 грн |
250+ | 9.31 грн |
500+ | 7.56 грн |
1000+ | 5.72 грн |
2500+ | 5.15 грн |
5000+ | 4.86 грн |
74HC4066D |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
на замовлення 13499 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.39 грн |
10+ | 29 грн |
25+ | 27.04 грн |
100+ | 20.29 грн |
250+ | 18.84 грн |
500+ | 15.94 грн |
1000+ | 12.12 грн |
TB67H451AFNG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3500+ | 42 грн |
7000+ | 38.42 грн |
TB67H451AFNG,EL |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BRUSHED MOTOR DRIVER IC, 50V, 3.
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 9636 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 98.94 грн |
10+ | 85.26 грн |
25+ | 80.89 грн |
100+ | 62.36 грн |
250+ | 58.29 грн |
500+ | 51.51 грн |
1000+ | 40 грн |
TC7WH00FU,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
товар відсутній
TC7WH241FUTE12LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
товар відсутній
TK10E80W,S1X |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 231.1 грн |
50+ | 176.79 грн |
DF2B36FU,H3XHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
товар відсутній
DF2B36FU,H3XHF |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 32V
Voltage - Clamping (Max) @ Ipp: 60V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 3190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26 грн |
16+ | 17.52 грн |
100+ | 8.86 грн |
500+ | 6.78 грн |
1000+ | 5.03 грн |
74LCX573FT |
Виробник: Toshiba Semiconductor and Storage
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 11.93 грн |
5000+ | 10.75 грн |
12500+ | 10.01 грн |
74LCX573FT |
Виробник: Toshiba Semiconductor and Storage
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 8ns
Supplier Device Package: 20-TSSOPB
Part Status: Active
на замовлення 19858 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.94 грн |
10+ | 27.82 грн |
25+ | 25.95 грн |
100+ | 19.47 грн |
250+ | 18.09 грн |
500+ | 15.3 грн |
1000+ | 11.63 грн |
SSM6L12TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
товар відсутній
SSM6L12TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 30V 500MA UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V, 218pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
Part Status: Active
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.83 грн |
10+ | 28.93 грн |
100+ | 19.72 грн |
500+ | 13.88 грн |
1000+ | 10.41 грн |
TLP9121A(KBDGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(MBHAGBTLF |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товар відсутній
TLP9121A(YSKGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(NCNGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(FD-GBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(BYDGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(OGIGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(ASTGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(HNEGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(CK-GBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(PSDGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP9121A(TOYOGTL,F |
товар відсутній
TLP9121A(MURGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товар відсутній
TLP9121A(PASGBTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товар відсутній
TLP701H(GEHC,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
TLP701HF(D4MBSTP,F |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
TLP701H(D4-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
TLP701H(D4-MBSTP,F |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
TLP701HF(D4-TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Part Status: Last Time Buy
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
TLP701HF(TP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
TLP701HF(F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 200mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Pulse Width Distortion (Max): 500ns
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
1SS226,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
1SS226,LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 1131 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.44 грн |
29+ | 9.81 грн |
100+ | 4.77 грн |
500+ | 3.74 грн |
1000+ | 2.6 грн |
TCR3DG11,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товар відсутній
TCR3DG11,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.1V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.65V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 4893 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26 грн |
14+ | 19.89 грн |
25+ | 18.22 грн |
100+ | 12.73 грн |
250+ | 11.53 грн |
500+ | 9.54 грн |
1000+ | 7.04 грн |
2500+ | 6.45 грн |
TC4S66F,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.06 грн |
6000+ | 5.51 грн |
15000+ | 5.03 грн |
TC4S66F,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPST-NO X 1 160OHM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: SMV
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
на замовлення 19631 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.11 грн |
34+ | 8.41 грн |
36+ | 7.87 грн |
100+ | 6.7 грн |
250+ | 6.27 грн |
500+ | 5.97 грн |
1000+ | 5.57 грн |
TPD2017FN,L1F(S |
Виробник: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
товар відсутній
TPD2017FN,L1F(S |
Виробник: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: INTELLIGENT PWR SWITCH, 8CH LOW
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 2V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
на замовлення 1083 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 291.04 грн |
10+ | 251.61 грн |
25+ | 237.86 грн |
100+ | 193.47 грн |
250+ | 183.54 грн |
500+ | 164.69 грн |
1000+ | 136.62 грн |
TPD2015FN,L1F(S |
Виробник: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
товар відсутній
TPD2015FN,L1F(S |
Виробник: Toshiba Semiconductor and Storage
Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Cut Tape (CT)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
Description: INTELLIGENT PWR SWITCH, 8CH HIGH
Packaging: Cut Tape (CT)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): 8V ~ 40V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 30-SSOP
Fault Protection: Current Limiting (Adjustable), Over Temperature
на замовлення 201 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 253.48 грн |
10+ | 218.92 грн |
25+ | 206.93 грн |
100+ | 168.31 грн |
GT50N322A |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1000V 50A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 800 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 156 W
Description: IGBT 1000V 50A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 800 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 156 W
на замовлення 97 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 311.98 грн |
10+ | 252.58 грн |
50+ | 238.35 грн |
TA58M08S(LS2FJT,AQ |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 500MA TO220NIS
Description: IC REG LINEAR 8V 500MA TO220NIS
товар відсутній