Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 187 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TLP5222(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 16SOCommon Mode Transient Immunity (Min): 25kV/µs Rise / Fall Time (Typ): 58ns, 57ns Supplier Device Package: 16-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2A, 2A Technology: Optical Coupling Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.67V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tube Voltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 250ns, 250ns |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TLP5231(E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 2CH GATE DVR 16SONumber of Channels: 2 Part Status: Active Pulse Width Distortion (Max): 150ns Propagation Delay tpLH / tpHL (Max): 300ns, 300ns Common Mode Transient Immunity (Min): 25kV/µs Rise / Fall Time (Typ): 50ns, 50ns Supplier Device Package: 16-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 1A, 1A Technology: Optical Coupling Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.7V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tube Voltage - Output Supply: 21.5V ~ 30V Current - DC Forward (If) (Max): 25 mA |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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2SB1481(TOJS,Q,M) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 100V 4A TO220NIS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB67S128FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPE RMOTOR DRIVER IC WITH ACTPackaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6.5V ~ 44V Supplier Device Package: 64-VQFN (9x9) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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TB67S128FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPE RMOTOR DRIVER IC WITH ACTPackaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 5A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6.5V ~ 44V Supplier Device Package: 64-VQFN (9x9) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128 |
на замовлення 5488 шт: термін постачання 21-31 дні (днів) |
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TC75S51FUTE85LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOPPackaging: Tape & Reel (TR) Voltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.5 V Number of Circuits: 1 Part Status: Active Supplier Device Package: 5-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Slew Rate: 0.5V/µs Current - Supply: 60µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC75S51FUTE85LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOPVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.5 V Number of Circuits: 1 Part Status: Active Supplier Device Package: 5-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Slew Rate: 0.5V/µs Current - Supply: 60µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 2886 шт: термін постачання 21-31 дні (днів) |
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RN4985,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz, 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN4985,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz, 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1909,LF(CT | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOHSupplier Device Package: US6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN1909,LF(CT | Toshiba Semiconductor and Storage |
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOHSupplier Device Package: US6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2392 шт: термін постачання 21-31 дні (днів) |
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DF2B6.8M1ACT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 50W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPC8125,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 8SOPGate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TPC8125,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 4525 шт: термін постачання 21-31 дні (днів) |
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SSM3K16FV,L3F | Toshiba Semiconductor and Storage |
Description: PB-F VESM S-MOS (LF) TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM3K16FV,L3F | Toshiba Semiconductor and Storage |
Description: PB-F VESM S-MOS (LF) TRANSISTORTechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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GT15J341,S4X | Toshiba Semiconductor and Storage |
Description: IGBT 600V 15A TO-220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-220SIS Td (on/off) @ 25°C: 60ns/170ns Switching Energy: 300µJ (on), 300µJ (off) Test Condition: 300V, 15A, 33Ohm, 15V Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 30 W |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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TC75W54FU,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 2 CIRCUIT 8SSOPCurrent - Output / Channel: 700 µA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Gain Bandwidth Product: 900 kHz Slew Rate: 0.7V/µs Current - Supply: 200µA Operating Temperature: -40°C ~ 85°C Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.8 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC75W54FU,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 2 CIRCUIT 8SSOPVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 700 µA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Gain Bandwidth Product: 900 kHz Slew Rate: 0.7V/µs Current - Supply: 200µA Operating Temperature: -40°C ~ 85°C Amplifier Type: Standard (General Purpose) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 1081 шт: термін постачання 21-31 дні (днів) |
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2SK2962,T6F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPart Status: Obsolete Supplier Device Package: TO-92MOD Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2962,F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPart Status: Obsolete Supplier Device Package: TO-92MOD Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2962,T6WNLF(M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPart Status: Obsolete Supplier Device Package: TO-92MOD Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2962(TE6,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPart Status: Obsolete Supplier Device Package: TO-92MOD Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2962,T6WNLF(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPart Status: Obsolete Supplier Device Package: TO-92MOD Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2962,T6F(M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODSupplier Device Package: TO-92MOD Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLP785(D4-Y-F6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUTCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP785(GRL-TP6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUTVce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 200% @ 5mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(TOYOG2TLF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(ND-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(FD-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(TOJS-TL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(AST-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(HNE-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(OGI-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(NCN-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104A(TOYOGTL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104(TOYOG-TL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104(OGI-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104(SND-TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104(HNE-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP9104(HITJ-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TK090N65Z,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LCX257FT | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPBPart Status: Active Supplier Device Package: 16-TSSOPB Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C Type: Multiplexer Circuit: 4 x 2:1 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74LCX257FT | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPBPart Status: Active Supplier Device Package: 16-TSSOPB Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C Type: Multiplexer Circuit: 4 x 2:1 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A 2-2N1DPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A 2-2N1DPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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SSM6N36FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.5A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6N36FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.5A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 2258 шт: термін постачання 21-31 дні (днів) |
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RN4907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN4907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7390 шт: термін постачання 21-31 дні (днів) |
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| RN1907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| RN1907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13065 шт: термін постачання 21-31 дні (днів) |
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TCR3DF29,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.9V 300MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.9V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TCR3DF29,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.9V 300MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.9V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 788 шт: термін постачання 21-31 дні (днів) |
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TCR3DF295,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.95V 300MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.95V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF295,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.95V 300MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.95V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 7630 шт: термін постачання 21-31 дні (днів) |
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TLP3905(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 30µA (Typ) Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 1ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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TLP3905(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 30µA (Typ) Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 1ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 14937 шт: термін постачання 21-31 дні (днів) |
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| TLP5222(E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 58ns, 57ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.67V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 58ns, 57ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.67V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 403.73 грн |
| 50+ | 231.64 грн |
| TLP5231(E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 16SO
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 150ns
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.7V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 21.5V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV 2CH GATE DVR 16SO
Number of Channels: 2
Part Status: Active
Pulse Width Distortion (Max): 150ns
Propagation Delay tpLH / tpHL (Max): 300ns, 300ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 50ns, 50ns
Supplier Device Package: 16-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.7V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 21.5V ~ 30V
Current - DC Forward (If) (Max): 25 mA
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 310.74 грн |
| 2SB1481(TOJS,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 4A TO220NIS
Description: TRANS PNP 100V 4A TO220NIS
товару немає в наявності
В кошику
од. на суму грн.
| TB67S128FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPE RMOTOR DRIVER IC WITH ACT
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128
Description: STEPPE RMOTOR DRIVER IC WITH ACT
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S128FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPE RMOTOR DRIVER IC WITH ACT
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128
Description: STEPPE RMOTOR DRIVER IC WITH ACT
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32, 1/128
на замовлення 5488 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.76 грн |
| 10+ | 382.13 грн |
| 25+ | 354.06 грн |
| 100+ | 303.26 грн |
| 250+ | 295.06 грн |
| TC75S51FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC75S51FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 2886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 15+ | 20.37 грн |
| 25+ | 17.70 грн |
| 100+ | 13.75 грн |
| 250+ | 12.41 грн |
| 500+ | 11.54 грн |
| 1000+ | 10.66 грн |
| RN4985,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.86 грн |
| RN4985,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| RN1909,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1909,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.85 грн |
| 44+ | 6.94 грн |
| 100+ | 4.65 грн |
| 500+ | 3.32 грн |
| 1000+ | 2.97 грн |
| DF2B6.8M1ACT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 20VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TPC8125,LQ(S |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Description: MOSFET P-CH 30V 10A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 22.50 грн |
| TPC8125,LQ(S |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 4525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.29 грн |
| 10+ | 52.98 грн |
| 100+ | 35.39 грн |
| 500+ | 25.88 грн |
| 1000+ | 23.52 грн |
| SSM3K16FV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SSM3K16FV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 38+ | 7.91 грн |
| 100+ | 4.87 грн |
| GT15J341,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 15A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 300V, 15A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
Description: IGBT 600V 15A TO-220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220SIS
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 300V, 15A, 33Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 30 W
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.28 грн |
| 50+ | 93.69 грн |
| 100+ | 84.50 грн |
| TC75W54FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC75W54FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 900 kHz
Slew Rate: 0.7V/µs
Current - Supply: 200µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 14+ | 22.16 грн |
| 25+ | 19.76 грн |
| 100+ | 16.11 грн |
| 250+ | 14.94 грн |
| 500+ | 14.24 грн |
| 1000+ | 13.44 грн |
| 2SK2962,T6F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2962,F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2962,T6WNLF(M |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2962(TE6,F,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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| 2SK2962,T6WNLF(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: MOSFET N-CH TO92MOD
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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| 2SK2962,T6F(M |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Part Status: Obsolete
Description: MOSFET N-CH TO92MOD
Supplier Device Package: TO-92MOD
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Part Status: Obsolete
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| TLP785(D4-Y-F6,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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| TLP785(GRL-TP6,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Description: PHOTOCOUPLER TRANS OUT
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
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| TLP9104A(TOYOG2TLF |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(ND-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(FD-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(TOJS-TL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(AST-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(HNE-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(OGI-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(NCN-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104A(TOYOGTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104(TOYOG-TL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104(OGI-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104(SND-TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104(HNE-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TLP9104(HITJ-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
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| TK090N65Z,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
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| 74LCX257FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 74LCX257FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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| SSM6N37FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| SSM6N37FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| SSM6N36FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| SSM6N36FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 2258 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 15+ | 20.30 грн |
| 100+ | 10.27 грн |
| 500+ | 7.86 грн |
| 1000+ | 5.83 грн |
| 2000+ | 4.90 грн |
| RN4907FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.53 грн |
| 8000+ | 4.84 грн |
| RN4907FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| RN2907FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.53 грн |
| RN2907FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 18+ | 16.79 грн |
| 100+ | 10.57 грн |
| 500+ | 7.39 грн |
| 1000+ | 6.57 грн |
| 2000+ | 5.88 грн |
| RN1907FE,LXHF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.87 грн |
| 8000+ | 5.13 грн |
| 12000+ | 4.86 грн |
| RN1907FE,LXHF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13065 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 18+ | 16.79 грн |
| 100+ | 10.57 грн |
| 500+ | 7.39 грн |
| 1000+ | 6.57 грн |
| 2000+ | 5.88 грн |
| TCR3DF29,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR3DF29,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 26.12 грн |
| 25+ | 22.83 грн |
| 100+ | 13.88 грн |
| 250+ | 11.48 грн |
| 500+ | 9.19 грн |
| TCR3DF295,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.36 грн |
| 6000+ | 5.51 грн |
| TCR3DF295,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 7630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 13+ | 24.55 грн |
| 25+ | 21.43 грн |
| 100+ | 13.01 грн |
| 250+ | 10.77 грн |
| 500+ | 8.62 грн |
| 1000+ | 6.50 грн |
| TLP3905(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 45.48 грн |
| 6000+ | 42.03 грн |
| 9000+ | 41.13 грн |
| TLP3905(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 14937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.36 грн |
| 10+ | 76.93 грн |
| 100+ | 58.23 грн |
| 500+ | 46.88 грн |
| 1000+ | 44.35 грн |




















