Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 187 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| TLP9104A(AST-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104A(HNE-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104A(OGI-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104A(NCN-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104A(TOYOGTL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104(TOYOG-TL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104(OGI-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104(SND-TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104(HNE-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP9104(HITJ-TL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK090N65Z,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.27mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LCX257FT | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPBPart Status: Active Supplier Device Package: 16-TSSOPB Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C Type: Multiplexer Circuit: 4 x 2:1 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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74LCX257FT | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPBPart Status: Active Supplier Device Package: 16-TSSOPB Voltage Supply Source: Single Supply Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C Type: Multiplexer Circuit: 4 x 2:1 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A 2-2N1DPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM6N37FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.25A 2-2N1DPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
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SSM6N36FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.5A ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM6N36FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.5A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 2258 шт: термін постачання 21-31 дні (днів) |
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RN4907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7390 шт: термін постачання 21-31 дні (днів) |
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| RN1907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| RN1907FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13065 шт: термін постачання 21-31 дні (днів) |
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TCR3DF29,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.9V 300MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.9V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR3DF29,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.9V 300MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.9V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 788 шт: термін постачання 21-31 дні (днів) |
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TCR3DF295,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.95V 300MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.95V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF295,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.95V 300MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.95V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.27V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 7630 шт: термін постачання 21-31 дні (днів) |
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TLP3905(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 30µA (Typ) Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 1ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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TLP3905(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 30µA (Typ) Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 1ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 14937 шт: термін постачання 21-31 дні (днів) |
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TLP3905(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 30µA (Typ) Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 1ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TLP3905(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 30µA (Typ) Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 300µs, 1ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 16604 шт: термін постачання 21-31 дні (днів) |
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TLP191B(TPL,U,C,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Voltage - Isolation: 2500Vrms Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 8V Turn On / Turn Off Time (Typ): 200µs, 3ms Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP191B(MBSTPL,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 24µA Voltage - Isolation: 2500Vrms Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 8V Turn On / Turn Off Time (Typ): 200µs, 3ms Part Status: Last Time Buy Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP191B(TOJSTLUC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERPackaging: Bulk Package / Case: 6-SMD (4 Leads), Gull Wing Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 24µA Voltage - Isolation: 2500Vrms Supplier Device Package: 6-MFSOP, 4 Lead Voltage - Output (Max): 8V Turn On / Turn Off Time (Typ): 200µs, 3ms Part Status: Last Time Buy Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP290(V4GBTP,SE | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SOPackaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLP290(V4GBTP,SE | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SOPackaging: Cut Tape (CT) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4719 шт: термін постачання 21-31 дні (днів) |
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74LCX74FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE DUAL 1BIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 14-TSSOP Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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74LCX74FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE DUAL 1BIT 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 14-TSSOP Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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GT30J65MRB,S1E | Toshiba Semiconductor and Storage |
Description: IGBT 650V 60A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-3P(N) Td (on/off) @ 25°C: 75ns/400ns Switching Energy: 1.4mJ (on), 220µJ (off) Test Condition: 400V, 15A, 56Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 200 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC74HC251AP(F) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 1 X 8:1 16-DIPPart Status: Not For New Designs Supplier Device Package: 16-DIP Voltage Supply Source: Single Supply Current - Output High, Low: 5.2mA, 5.2mA Independent Circuits: 1 Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Type: Multiplexer Circuit: 1 x 8:1 Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
| TCD1103GFG(8Z) | Toshiba Semiconductor and Storage |
Description: TCD1103GFG(8Z) Packaging: Tray Package / Case: 16-GLCC Module Type: CCD Operating Temperature: -25°C ~ 60°C Voltage - Supply: 3V ~ 4V Pixel Size: 5.5µm x 64µm Supplier Device Package: 16-GLCC (15.2x6) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK090Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 30A TO247-4LInput Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-4L(T) Part Status: Active Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 1.27mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-4 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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SSM6L820R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPFPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6L820R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Supplier Device Package: 6-TSOP-F Part Status: Active |
на замовлення 5818 шт: термін постачання 21-31 дні (днів) |
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SSM5N15FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA ESVVgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Part Status: Active Supplier Device Package: ESV |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM5N15FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA ESVInput Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Part Status: Active Supplier Device Package: ESV Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 3975 шт: термін постачання 21-31 дні (днів) |
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SSM6N15AFE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA Drain to Source Voltage (Vdss): 30V Power - Max: 150mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1.5V @ 100µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM6N15AFE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1.5V @ 100µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 100mA Drain to Source Voltage (Vdss): 30V Power - Max: 150mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MT3S113(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 5.3V 12.5GHZ SMINIPart Status: Active Supplier Device Package: S-Mini Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Frequency - Transition: 12.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 5.3V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Gain: 11.8dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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MT3S113(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 5.3V 12.5GHZ SMINIPart Status: Active Supplier Device Package: S-Mini Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Frequency - Transition: 12.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 5.3V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Packaging: Cut Tape (CT) Gain: 11.8dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 1617 шт: термін постачання 21-31 дні (днів) |
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TLP385(GR-TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP385(GR-TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 8341 шт: термін постачання 21-31 дні (днів) |
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TCK303G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSPPart Status: Active Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Supplier Device Package: 9-WCSP (1.5x1.5) Ratio - Input:Output: 1:1 Current - Output (Max): 3A Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V Voltage - Load: 18V (Max) Rds On (Typ): 73mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 9-UFBGA, WLCSP Features: Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK303G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSPPart Status: Active Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Supplier Device Package: 9-WCSP (1.5x1.5) Ratio - Input:Output: 1:1 Current - Output (Max): 3A Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V Voltage - Load: 18V (Max) Rds On (Typ): 73mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 9-UFBGA, WLCSP Features: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) |
на замовлення 5913 шт: термін постачання 21-31 дні (днів) |
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TCR3DM28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TCR3DM28,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 22290 шт: термін постачання 21-31 дні (днів) |
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TPH3R506PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 94A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V Power Dissipation (Max): 830mW (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR8BM33A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.285V @ 800mA Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-DFNB (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 800mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR8BM33A,L3F | Toshiba Semiconductor and Storage |
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 36 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 800mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Voltage Dropout (Max): 0.285V @ 800mA Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 5-DFNB (1.2x1.2) |
на замовлення 9959 шт: термін постачання 21-31 дні (днів) |
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TK210V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 15A 5DFNPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: 4-DFN-EP (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TK210V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 15A 5DFNPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 610µA Supplier Device Package: 4-DFN-EP (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V |
на замовлення 4616 шт: термін постачання 21-31 дні (днів) |
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| TLP9104A(AST-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104A(HNE-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104A(OGI-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104A(NCN-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104A(TOYOGTL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104(TOYOG-TL,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104(OGI-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104(SND-TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104(HNE-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TLP9104(HITJ-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
Description: PHOTOCOUPLER
Packaging: Bulk
Part Status: Last Time Buy
товару немає в наявності
В кошику
од. на суму грн.
| TK090N65Z,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Description: MOSFET N-CH 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX257FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74LCX257FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC MULTIPLEXER 4 X 2:1 16TSSOPB
Part Status: Active
Supplier Device Package: 16-TSSOPB
Voltage Supply Source: Single Supply
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SSM6N37FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6N37FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.25A 2-2N1D
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| SSM6N36FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6N36FE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 2258 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 15+ | 20.53 грн |
| 100+ | 10.39 грн |
| 500+ | 7.95 грн |
| 1000+ | 5.90 грн |
| 2000+ | 4.96 грн |
| RN4907FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.05 грн |
| 8000+ | 5.29 грн |
| RN2907FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.05 грн |
| RN2907FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 18+ | 17.36 грн |
| 100+ | 10.91 грн |
| 500+ | 7.63 грн |
| 1000+ | 6.79 грн |
| 2000+ | 6.07 грн |
| RN1907FE,LXHF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.05 грн |
| 8000+ | 5.29 грн |
| 12000+ | 5.02 грн |
| RN1907FE,LXHF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V 100MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13065 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 18+ | 17.36 грн |
| 100+ | 10.91 грн |
| 500+ | 7.63 грн |
| 1000+ | 6.79 грн |
| 2000+ | 6.07 грн |
| TCR3DF29,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR3DF29,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 12+ | 26.42 грн |
| 25+ | 23.10 грн |
| 100+ | 14.04 грн |
| 250+ | 11.62 грн |
| 500+ | 9.30 грн |
| TCR3DF295,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.43 грн |
| 6000+ | 5.57 грн |
| TCR3DF295,LM(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 2.95V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.27V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 7630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.49 грн |
| 13+ | 24.83 грн |
| 25+ | 21.68 грн |
| 100+ | 13.16 грн |
| 250+ | 10.90 грн |
| 500+ | 8.72 грн |
| 1000+ | 6.57 грн |
| TLP3905(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 46.00 грн |
| 6000+ | 42.52 грн |
| 9000+ | 41.61 грн |
| TLP3905(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 14937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.65 грн |
| 10+ | 77.82 грн |
| 100+ | 58.90 грн |
| 500+ | 47.42 грн |
| 1000+ | 44.86 грн |
| TLP3905(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 46.00 грн |
| 6000+ | 42.52 грн |
| 9000+ | 41.61 грн |
| 15000+ | 38.08 грн |
| TLP3905(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 30µA (Typ)
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300µs, 1ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 16604 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.65 грн |
| 10+ | 77.82 грн |
| 100+ | 58.90 грн |
| 500+ | 47.42 грн |
| 1000+ | 44.86 грн |
| TLP191B(TPL,U,C,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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| TLP191B(MBSTPL,C,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
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| TLP191B(TOJSTLUC,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 8V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Last Time Buy
Current - DC Forward (If) (Max): 50 mA
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од. на суму грн.
| TLP290(V4GBTP,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.85 грн |
| TLP290(V4GBTP,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.97 грн |
| 12+ | 26.27 грн |
| 100+ | 18.91 грн |
| 500+ | 14.65 грн |
| 1000+ | 13.63 грн |
| 74LCX74FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 74LCX74FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DUAL 1BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 15+ | 20.98 грн |
| 25+ | 17.24 грн |
| 100+ | 12.14 грн |
| GT30J65MRB,S1E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT 650V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 75ns/400ns
Switching Energy: 1.4mJ (on), 220µJ (off)
Test Condition: 400V, 15A, 56Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 200 W
Description: IGBT 650V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 75ns/400ns
Switching Energy: 1.4mJ (on), 220µJ (off)
Test Condition: 400V, 15A, 56Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 200 W
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| TC74HC251AP(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 1 X 8:1 16-DIP
Part Status: Not For New Designs
Supplier Device Package: 16-DIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer
Circuit: 1 x 8:1
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC MULTIPLEXER 1 X 8:1 16-DIP
Part Status: Not For New Designs
Supplier Device Package: 16-DIP
Voltage Supply Source: Single Supply
Current - Output High, Low: 5.2mA, 5.2mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer
Circuit: 1 x 8:1
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 25 шт
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| TCD1103GFG(8Z) |
Виробник: Toshiba Semiconductor and Storage
Description: TCD1103GFG(8Z)
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Part Status: Active
Description: TCD1103GFG(8Z)
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Part Status: Active
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| TK090Z65Z,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
Description: MOSFET N-CH 650V 30A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 435.02 грн |
| 25+ | 248.41 грн |
| SSM6L820R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.19 грн |
| SSM6L820R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Part Status: Active
на замовлення 5818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 31.78 грн |
| 100+ | 20.51 грн |
| 500+ | 14.69 грн |
| 1000+ | 13.22 грн |
| SSM5N15FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: ESV
Description: MOSFET N-CH 30V 100MA ESV
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: ESV
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM5N15FE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA ESV
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: ESV
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100MA ESV
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: ESV
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 12+ | 25.36 грн |
| 100+ | 14.36 грн |
| 500+ | 8.93 грн |
| 1000+ | 6.84 грн |
| 2000+ | 5.95 грн |
| SSM6N15AFE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Description: MOSFET 2N-CH 30V 0.1A ES6
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6N15AFE,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.1A ES6
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.5V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MT3S113(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Frequency - Transition: 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 5.3V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 11.8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Frequency - Transition: 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 5.3V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 11.8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MT3S113(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Frequency - Transition: 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 5.3V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Packaging: Cut Tape (CT)
Gain: 11.8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Frequency - Transition: 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 5.3V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Packaging: Cut Tape (CT)
Gain: 11.8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 1617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 10+ | 44.23 грн |
| 25+ | 39.97 грн |
| 100+ | 32.82 грн |
| 250+ | 28.80 грн |
| 500+ | 25.45 грн |
| 1000+ | 19.77 грн |
| TLP385(GR-TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.14 грн |
| 6000+ | 11.97 грн |
| TLP385(GR-TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 8341 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.41 грн |
| 12+ | 25.36 грн |
| 100+ | 18.25 грн |
| 500+ | 14.13 грн |
| 1000+ | 13.14 грн |
| TCK303G,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Part Status: Active
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Supplier Device Package: 9-WCSP (1.5x1.5)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Voltage - Load: 18V (Max)
Rds On (Typ): 73mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 9-UFBGA, WLCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Part Status: Active
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Supplier Device Package: 9-WCSP (1.5x1.5)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Voltage - Load: 18V (Max)
Rds On (Typ): 73mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 9-UFBGA, WLCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 45.19 грн |
| TCK303G,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Part Status: Active
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Supplier Device Package: 9-WCSP (1.5x1.5)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Voltage - Load: 18V (Max)
Rds On (Typ): 73mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 9-UFBGA, WLCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Part Status: Active
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Supplier Device Package: 9-WCSP (1.5x1.5)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Voltage - Load: 18V (Max)
Rds On (Typ): 73mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 9-UFBGA, WLCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
на замовлення 5913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.63 грн |
| 10+ | 66.42 грн |
| 25+ | 60.08 грн |
| 100+ | 49.92 грн |
| 250+ | 46.83 грн |
| 500+ | 44.96 грн |
| 1000+ | 43.47 грн |
| 2500+ | 41.01 грн |
| TCR3DM28,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.77 грн |
| 20000+ | 5.97 грн |
| TCR3DM28,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 22290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.97 грн |
| 14+ | 22.87 грн |
| 25+ | 18.81 грн |
| 100+ | 13.26 грн |
| 250+ | 11.11 грн |
| 500+ | 9.78 грн |
| 1000+ | 8.53 грн |
| TPH3R506PL,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 94A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Description: MOSFET N-CH 60V 94A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 47A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR8BM33A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 9.06 грн |
| TCR8BM33A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
Description: 800MA LDO, VOUT=3.3V, DROPOUT=17
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Voltage Dropout (Max): 0.285V @ 800mA
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 5-DFNB (1.2x1.2)
на замовлення 9959 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.22 грн |
| 10+ | 32.98 грн |
| 25+ | 27.23 грн |
| 100+ | 19.46 грн |
| 250+ | 16.45 грн |
| 500+ | 14.60 грн |
| 1000+ | 12.83 грн |
| 2500+ | 11.18 грн |
| TK210V65Z,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 93.32 грн |
| TK210V65Z,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Description: MOSFET N-CH 650V 15A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: 4-DFN-EP (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
на замовлення 4616 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 333.91 грн |
| 10+ | 213.15 грн |
| 100+ | 151.77 грн |
| 500+ | 134.51 грн |

























