Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 46 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TC4S81FT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC74HC4052AFTEL | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 4X1 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 140MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -50dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 5Ohm Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ) Channel Capacitance (CS(off), CD(off)): 2pF, 40pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC74HC4053AFTEL | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 2X1 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Multiplexer/Demultiplexer Circuit: 3:1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TC74HC4066AFTEL | Toshiba Semiconductor and Storage |
Description: IC SWITCH QUAD BILATERAL 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S56FUTE85LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR 5SSOPType: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Part Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 20µA Propagation Delay (Max): 680ns Supplier Device Package: 5-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C |
на замовлення 36339 шт: термін постачання 21-31 дні (днів) |
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TC75S58F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMVType: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Supplier Device Package: SMV Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Part Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 20µA Propagation Delay (Max): 800ns |
на замовлення 2677 шт: термін постачання 21-31 дні (днів) |
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TC75S58FUTE85LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR 5SSOPPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 20µA Propagation Delay (Max): 800ns Supplier Device Package: 5-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 5548 шт: термін постачання 21-31 дні (днів) |
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TC75W56FK,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2CH 8-SSOPPackaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 8-SSOP Propagation Delay (Max): 680ns Current - Quiescent (Max): 40µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Part Status: Active |
на замовлення 80984 шт: термін постачання 21-31 дні (днів) |
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TC75W57FKTE85LF | Toshiba Semiconductor and Storage |
Description: IC COMP DUAL GP PP CMOS US8Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 400µA Propagation Delay (Max): 140ns Supplier Device Package: 8-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7S14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1INP 5SSOPCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.3V ~ 1.5V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 39153 шт: термін постачання 21-31 дні (днів) |
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TC7S66F,LF | Toshiba Semiconductor and Storage |
Description: IC BILATERAL SWITCH 1 X 1:1 SMVMounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Supplier Device Package: SMV Voltage Supply Source: Single Supply Independent Circuits: 1 Voltage - Supply: 2V ~ 12V Operating Temperature: -40°C ~ 85°C Type: Bilateral, FET Switches Circuit: 1 x 1:1 |
на замовлення 263 шт: термін постачання 21-31 дні (днів) |
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TC7S66FUT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE USV L-MOS SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SET17FTE85LF | Toshiba Semiconductor and Storage |
Description: IC GATE SMV L-MOS SMV |
на замовлення 2420 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH00FSTPL3 | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP FSV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH02FSTPL3 | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP FSV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH125FSTPL3 | Toshiba Semiconductor and Storage |
Description: IC GATE L-MOS FSV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH126FSTPL3 | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V FSV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH14FSTPL3 | Toshiba Semiconductor and Storage |
Description: IC INVERTER SCHMITT 1CH FSV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH86FSTPL3 | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP FSV Current - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Input Logic Level - Low: 0.5V Input Logic Level - High: 1.5V Supplier Device Package: fSV Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS250(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC59 Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS295(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTTKY 4V SC59-3 |
на замовлення 4034 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS308(TE85L,F | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SMVCurrent - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMV Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 4 Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 9611 шт: термін постачання 21-31 дні (днів) |
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1SS319(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 40V 100MA SC61BPackaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-61B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 14867 шт: термін постачання 21-31 дні (днів) |
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1SS352,H3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SC762Packaging: Cut Tape (CT) Package / Case: SC-76A Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-76-2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 223779 шт: термін постачання 21-31 дні (днів) |
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1SS361CT(TPL3) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: CST3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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1SS361(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: DIODE SW 80V 100MA SSM |
на замовлення 1912 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS374(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 10V 100MA SC-59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 20061 шт: термін постачання 21-31 дні (днів) |
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1SS378(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 10V 100MA SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 47261 шт: термін постачання 21-31 дні (днів) |
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1SS383(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 40V 100MA USQPackaging: Cut Tape (CT) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: USQ Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 1729 шт: термін постачання 21-31 дні (днів) |
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1SS387CT,L3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: CST2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 230045 шт: термін постачання 21-31 дні (днів) |
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1SS392,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 40V 100MA SC-59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-59 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 1685 шт: термін постачання 21-31 дні (днів) |
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1SS401(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 300MA SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
на замовлення 2719 шт: термін постачання 21-31 дні (днів) |
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1SS413,L3M | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA FSCPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 62658 шт: термін постачання 21-31 дні (днів) |
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1SS416CT,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 15pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 34102 шт: термін постачання 21-31 дні (днів) |
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1SS416(TL3,T) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 100MA FSC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS423(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 40V 100MA SSMCurrent - Reverse Leakage @ Vr: 5 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SSM Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 12719 шт: термін постачання 21-31 дні (днів) |
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1SS424(TPL3,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 200MA ESCCurrent - Reverse Leakage @ Vr: 50 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: ESC Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 20pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) |
на замовлення 16950 шт: термін постачання 21-31 дні (днів) |
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2SA1163-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
на замовлення 18530 шт: термін постачання 21-31 дні (днів) |
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2SA1312-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A S-MINI Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: S-Mini Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1588-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 100 mW |
на замовлення 7516 шт: термін постачання 21-31 дні (днів) |
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2SA1618-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1832-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SSMPower - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1873-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 150MA USVPart Status: Active Supplier Device Package: USV Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 4983 шт: термін постачання 21-31 дні (днів) |
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2SA1873-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 150MA USVPart Status: Active Supplier Device Package: USV Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 5918 шт: термін постачання 21-31 дні (днів) |
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2SA2154CT-GR,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.1A CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: CST3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 15620 шт: термін постачання 21-31 дні (днів) |
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2SC2714-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ S MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Supplier Device Package: S-Mini Part Status: Active |
на замовлення 7860 шт: термін постачання 21-31 дні (днів) |
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2SC3138-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 200V 0.05A TO-236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC3265-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 25V 0.8A TO-236Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 120MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 200 mW |
на замовлення 2080 шт: термін постачання 21-31 дні (днів) |
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2SC3326-A,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A TO-236Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Frequency - Transition: 30MHz Supplier Device Package: TO-236 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 150 mW |
на замовлення 31689 шт: термін постачання 21-31 дні (днів) |
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2SC4207-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 150MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV Part Status: Active |
на замовлення 16139 шт: термін постачання 21-31 дні (днів) |
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2SC4207-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 150MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV |
на замовлення 33956 шт: термін постачання 21-31 дні (днів) |
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2SC4215-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 17dB ~ 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz Supplier Device Package: SC-70 Part Status: Active |
на замовлення 1479 шт: термін постачання 21-31 дні (днів) |
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2SC4738-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 7266 шт: термін постачання 21-31 дні (днів) |
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2SC4944-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A USVPower - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: USV Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 8211 шт: термін постачання 21-31 дні (днів) |
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2SC4944-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 150MA USVCurrent - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 200mW Operating Temperature: 125°C (TJ) Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Supplier Device Package: USV Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V |
на замовлення 2988 шт: термін постачання 21-31 дні (днів) |
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2SC5065-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 12dB ~ 17dB Power - Max: 100mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SC-70 Part Status: Active |
на замовлення 287 шт: термін постачання 21-31 дні (днів) |
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2SC5084-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 11dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: S-Mini Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5085-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SC-70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 11dB ~ 16.5dB Power - Max: 100mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SC-70 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5095-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SC70 Part Status: Obsolete Supplier Device Package: SC-70 Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Frequency - Transition: 10GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 15mA Power - Max: 100mW Gain: 13dB ~ 7dB Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5095-R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SC70 Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Frequency - Transition: 10GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 15mA Power - Max: 100mW Gain: 13dB ~ 7.5dB Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: SC-70 |
товару немає в наявності |
В кошику од. на суму грн. |
| TC4S81FT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Description: IC GATE AND 1CH 2-INP SMV
товару немає в наявності
В кошику
од. на суму грн.
| TC74HC4052AFTEL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 140MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2pF, 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC MUX/DEMUX 4X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 140MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ)
Channel Capacitance (CS(off), CD(off)): 2pF, 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
товару немає в наявності
В кошику
од. на суму грн.
| TC74HC4053AFTEL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Multiplexer/Demultiplexer Circuit: 3:1
Description: IC MUX/DEMUX 2X1 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Multiplexer/Demultiplexer Circuit: 3:1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 15+ | 20.30 грн |
| 25+ | 18.15 грн |
| 100+ | 14.73 грн |
| 250+ | 13.63 грн |
| 500+ | 12.97 грн |
| 1000+ | 12.22 грн |
| TC74HC4066AFTEL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH QUAD BILATERAL 14TSSOP
Description: IC SWITCH QUAD BILATERAL 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| TC75S56FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 680ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 680ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
на замовлення 36339 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.38 грн |
| 11+ | 28.46 грн |
| 25+ | 23.40 грн |
| 100+ | 16.62 грн |
| 250+ | 13.99 грн |
| 500+ | 12.37 грн |
| 1000+ | 10.83 грн |
| TC75S58F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
Description: IC COMPARATOR 1 GEN PUR SMV
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
на замовлення 2677 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 11+ | 28.76 грн |
| 25+ | 26.39 грн |
| 100+ | 18.42 грн |
| 250+ | 16.69 грн |
| 500+ | 13.81 грн |
| 1000+ | 10.19 грн |
| TC75S58FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 20µA
Propagation Delay (Max): 800ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 5548 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 11+ | 28.53 грн |
| 25+ | 26.06 грн |
| 100+ | 18.20 грн |
| 250+ | 16.50 грн |
| 500+ | 13.65 грн |
| 1000+ | 10.07 грн |
| TC75W56FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2CH 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 2CH 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 40µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
на замовлення 80984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 19+ | 16.38 грн |
| 25+ | 14.52 грн |
| 100+ | 11.72 грн |
| 250+ | 10.82 грн |
| 500+ | 10.28 грн |
| 1000+ | 9.67 грн |
| TC75W57FKTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMP DUAL GP PP CMOS US8
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC COMP DUAL GP PP CMOS US8
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
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| TC7S14FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.5V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.5V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 39153 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 17+ | 18.27 грн |
| 25+ | 14.94 грн |
| 100+ | 10.50 грн |
| 250+ | 8.77 грн |
| 500+ | 7.70 грн |
| 1000+ | 6.69 грн |
| TC7S66F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BILATERAL SWITCH 1 X 1:1 SMV
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 2V ~ 12V
Operating Temperature: -40°C ~ 85°C
Type: Bilateral, FET Switches
Circuit: 1 x 1:1
Description: IC BILATERAL SWITCH 1 X 1:1 SMV
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMV
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 2V ~ 12V
Operating Temperature: -40°C ~ 85°C
Type: Bilateral, FET Switches
Circuit: 1 x 1:1
на замовлення 263 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 13+ | 23.62 грн |
| 25+ | 20.68 грн |
| 100+ | 12.57 грн |
| 250+ | 10.40 грн |
| TC7S66FUT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE USV L-MOS SMV
Description: IC GATE USV L-MOS SMV
товару немає в наявності
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од. на суму грн.
| TC7SET17FTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS SMV
Description: IC GATE SMV L-MOS SMV
на замовлення 2420 шт:
термін постачання 21-31 дні (днів)
| TC7SH00FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP FSV
Description: IC GATE NAND 1CH 2-INP FSV
товару немає в наявності
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од. на суму грн.
| TC7SH02FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP FSV
Description: IC GATE NOR 1CH 2-INP FSV
товару немає в наявності
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од. на суму грн.
| TC7SH125FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
Description: IC GATE L-MOS FSV
товару немає в наявності
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од. на суму грн.
| TC7SH126FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V FSV
Description: IC BUFFER NON-INVERT 5.5V FSV
товару немає в наявності
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од. на суму грн.
| TC7SH14FSTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMITT 1CH FSV
Description: IC INVERTER SCHMITT 1CH FSV
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од. на суму грн.
| TC7SH86FSTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP FSV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
Description: IC GATE XOR 1CH 2-INP FSV
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1SS250(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC59
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Description: DIODE GEN PURP 200V 100MA SC59
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
товару немає в наявності
В кошику
од. на суму грн.
| 1SS295(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 4V SC59-3
Description: DIODE ARRAY SCHOTTKY 4V SC59-3
на замовлення 4034 шт:
термін постачання 21-31 дні (днів)
| 1SS308(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 4 Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SMV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 4 Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 9611 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 22+ | 13.81 грн |
| 100+ | 7.50 грн |
| 500+ | 6.20 грн |
| 1000+ | 5.80 грн |
| 1SS319(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 14867 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 21+ | 14.64 грн |
| 100+ | 9.17 грн |
| 500+ | 6.37 грн |
| 1000+ | 5.65 грн |
| 1SS352,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC762
Packaging: Cut Tape (CT)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STANDARD 80V 100MA SC762
Packaging: Cut Tape (CT)
Package / Case: SC-76A
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-76-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 223779 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 40+ | 7.70 грн |
| 56+ | 5.48 грн |
| 100+ | 4.46 грн |
| 500+ | 3.23 грн |
| 1SS361CT(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: CST3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: CST3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.51 грн |
| 22+ | 13.81 грн |
| 1SS361(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SW 80V 100MA SSM
Description: DIODE SW 80V 100MA SSM
на замовлення 1912 шт:
термін постачання 21-31 дні (днів)
| 1SS374(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE ARR SCHOTT 10V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 20061 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 33+ | 9.28 грн |
| 100+ | 5.80 грн |
| 500+ | 4.67 грн |
| 1000+ | 4.35 грн |
| 1SS378(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE ARR SCHOTT 10V 100MA SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 47261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 31+ | 9.96 грн |
| 100+ | 5.48 грн |
| 500+ | 4.41 грн |
| 1000+ | 4.14 грн |
| 1SS383(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 40V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 15.02 грн |
| 50+ | 10.81 грн |
| 100+ | 8.85 грн |
| 500+ | 6.56 грн |
| 1SS387CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STANDARD 80V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 230045 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.46 грн |
| 32+ | 9.51 грн |
| 50+ | 6.79 грн |
| 100+ | 5.54 грн |
| 500+ | 4.05 грн |
| 1SS392,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 40V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 100MA SC-59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 1685 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 23+ | 13.51 грн |
| 100+ | 8.47 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.20 грн |
| 1SS401(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE SCHOTTKY 20V 300MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
на замовлення 2719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 25+ | 12.23 грн |
| 100+ | 7.65 грн |
| 500+ | 5.28 грн |
| 1000+ | 4.67 грн |
| 1SS413,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 62658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 29+ | 10.57 грн |
| 50+ | 7.55 грн |
| 100+ | 6.16 грн |
| 500+ | 4.52 грн |
| 1SS416CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 34102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 27+ | 11.25 грн |
| 50+ | 8.02 грн |
| 100+ | 6.53 грн |
| 500+ | 4.79 грн |
| 1SS416(TL3,T) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA FSC
Description: DIODE SCHOTTKY 30V 100MA FSC
товару немає в наявності
В кошику
од. на суму грн.
| 1SS423(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 40V 100MA SSM
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SSM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 40V 100MA SSM
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SSM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 12719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 20+ | 15.40 грн |
| 100+ | 11.34 грн |
| 500+ | 7.96 грн |
| 1000+ | 7.09 грн |
| 1SS424(TPL3,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 200MA ESC
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ESC
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 200MA ESC
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ESC
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
на замовлення 16950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.97 грн |
| 44+ | 7.02 грн |
| 100+ | 5.19 грн |
| 500+ | 3.56 грн |
| 1000+ | 2.52 грн |
| 2000+ | 2.16 грн |
| 2SA1163-BL,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
на замовлення 18530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 28+ | 11.02 грн |
| 100+ | 6.87 грн |
| 500+ | 4.73 грн |
| 1000+ | 4.18 грн |
| 2SA1312-BL(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1588-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
Description: TRANS PNP 30V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 100 mW
на замовлення 7516 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 36+ | 8.53 грн |
| 100+ | 5.25 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.17 грн |
| 2SA1618-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Description: TRANS 2PNP 50V 0.15A SMV
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1832-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 0.15A SSM
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.62 грн |
| 56+ | 5.43 грн |
| 100+ | 3.68 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.33 грн |
| 2SA1873-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 4983 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 28+ | 10.87 грн |
| 100+ | 6.79 грн |
| 500+ | 4.69 грн |
| 1000+ | 4.14 грн |
| 2SA1873-Y(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 50V 150MA USV
Part Status: Active
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 5918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 24+ | 12.68 грн |
| 100+ | 7.91 грн |
| 500+ | 5.48 грн |
| 1000+ | 4.86 грн |
| 2SA2154CT-GR,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 15620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 28+ | 11.02 грн |
| 100+ | 6.87 грн |
| 500+ | 4.73 грн |
| 1000+ | 4.18 грн |
| 2000+ | 3.71 грн |
| 5000+ | 3.15 грн |
| 2SC2714-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
на замовлення 7860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| 20+ | 15.40 грн |
| 100+ | 9.65 грн |
| 500+ | 6.73 грн |
| 1000+ | 5.98 грн |
| 2SC3138-Y(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3265-Y,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 25V 0.8A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Description: TRANS NPN 25V 0.8A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
на замовлення 2080 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 20+ | 15.85 грн |
| 100+ | 9.96 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.16 грн |
| 2SC3326-A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
на замовлення 31689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 14.79 грн |
| 100+ | 9.28 грн |
| 500+ | 6.45 грн |
| 1000+ | 5.72 грн |
| 2SC4207-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
на замовлення 16139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.51 грн |
| 23+ | 13.59 грн |
| 100+ | 8.50 грн |
| 500+ | 5.89 грн |
| 1000+ | 5.22 грн |
| 2SC4207-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Description: TRANS 2NPN 50V 150MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
на замовлення 33956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 25+ | 12.45 грн |
| 100+ | 7.80 грн |
| 500+ | 5.41 грн |
| 1000+ | 4.79 грн |
| 2SC4215-Y(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 17dB ~ 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Supplier Device Package: SC-70
Part Status: Active
на замовлення 1479 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.49 грн |
| 13+ | 23.93 грн |
| 100+ | 12.05 грн |
| 500+ | 10.02 грн |
| 1000+ | 7.80 грн |
| 2SC4738-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 7266 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 39+ | 7.77 грн |
| 100+ | 4.80 грн |
| 500+ | 3.28 грн |
| 1000+ | 2.88 грн |
| 2SC4944-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A USV
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.15A USV
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 8211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 24+ | 12.68 грн |
| 100+ | 7.91 грн |
| 500+ | 5.48 грн |
| 1000+ | 4.86 грн |
| 2SC4944-Y(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 150MA USV
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Description: TRANS 2NPN 50V 150MA USV
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual) Matched Pair, Common Emitter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Supplier Device Package: USV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 24+ | 12.68 грн |
| 100+ | 7.91 грн |
| 500+ | 5.48 грн |
| 1000+ | 4.86 грн |
| 2SC5065-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 12dB ~ 17dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Active
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 14+ | 22.19 грн |
| 100+ | 14.16 грн |
| 2SC5084-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Description: RF TRANS NPN 12V 7GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5085-Y(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
Description: RF TRANS NPN 12V 7GHZ SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 11dB ~ 16.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SC-70
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5095-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Part Status: Obsolete
Supplier Device Package: SC-70
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 13dB ~ 7dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 10V 10GHZ SC70
Part Status: Obsolete
Supplier Device Package: SC-70
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 13dB ~ 7dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5095-R(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SC70
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 13dB ~ 7.5dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: SC-70
Description: RF TRANS NPN 10V 10GHZ SC70
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 13dB ~ 7.5dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: SC-70
товару немає в наявності
В кошику
од. на суму грн.





































