Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 69 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TC75W55FK(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC CMOS 2 CIRCUIT 8SSOPVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.8 V Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Gain Bandwidth Product: 160 kHz Slew Rate: 0.08V/µs Current - Supply: 20µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 3220 шт: термін постачання 21-31 дні (днів) |
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TC75W58FK,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2 GEN PUR 8SSOPPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 22µA Propagation Delay (Max): 800ns Supplier Device Package: 8-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 2 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC75W59FK(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2 GEN PUR 8SSOPPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 220µA Propagation Delay (Max): 200ns Supplier Device Package: 8-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 2 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 5828 шт: термін постачання 21-31 дні (днів) |
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TC75S59F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMVPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 220µA Propagation Delay (Max): 200ns Supplier Device Package: SMV Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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TC75S59FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR 5SSOPPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 220µA Propagation Delay (Max): 200ns Supplier Device Package: 5-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 3652 шт: термін постачання 21-31 дні (днів) |
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TC7SPN3125CFC(T5L) | Toshiba Semiconductor and Storage |
Description: DUAL SUPPLY BUS BUFFER UNI CST6C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4915-O,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4915-Y,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ SSM |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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74VHC541FT | Toshiba Semiconductor and Storage |
Description: IC BUFF 2V/5.5V 20-TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 8 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 10076 шт: термін постачання 21-31 дні (днів) |
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74VHCT541AFT | Toshiba Semiconductor and Storage |
Description: IC BUFF 4.5V/5.5V 20-TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Number of Bits per Element: 8 |
на замовлення 3104 шт: термін постачання 21-31 дні (днів) |
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74VHC244FT | Toshiba Semiconductor and Storage |
Description: IC BUFF 2V/5.5V 20-TSSOPLogic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 4 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) |
на замовлення 3728 шт: термін постачання 21-31 дні (днів) |
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74VHCT244AFT | Toshiba Semiconductor and Storage |
Description: IC BUFF 4.5V/5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 23131 шт: термін постачання 21-31 дні (днів) |
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TC7SET34FU(T5L,F,T | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTER USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SP3125CFC(TE85L | Toshiba Semiconductor and Storage |
Description: IC TRNSLTR UNIDIRECTIONAL CST6C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC245FT | Toshiba Semiconductor and Storage |
Description: IC TXRX 2V/5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 8178 шт: термін постачання 21-31 дні (днів) |
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74VHCT245AFT | Toshiba Semiconductor and Storage |
Description: IC TXRX 4.5V/5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP |
на замовлення 11998 шт: термін постачання 21-31 дні (днів) |
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74VHC574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 115 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 18294 шт: термін постачання 21-31 дні (днів) |
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74VHCT574AFT(BE) | Toshiba Semiconductor and Storage |
Description: IC D-TYPE POS TRG SNGL 20TSSOP |
на замовлення 3011 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH34FU(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC GATE L-MOS USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC540FT | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 5.5V 20TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 8 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 116335 шт: термін постачання 21-31 дні (днів) |
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74VHCT540AFT | Toshiba Semiconductor and Storage |
Description: IC BUFF 4.5V/5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 5920 шт: термін постачання 21-31 дні (днів) |
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74VHC240FT | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 5.5V 20TSSOPLogic Type: Buffer, Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 4 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) |
на замовлення 2188 шт: термін постачання 21-31 дні (днів) |
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74VHCT240AFT(BE) | Toshiba Semiconductor and Storage |
Description: IC INVERTER DUAL 4-INPUT 20TSSOP |
на замовлення 2391 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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74VHC573FT | Toshiba Semiconductor and Storage |
Description: IC D-TYPE 8:8 20-TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Delay Time - Propagation: 6.5ns Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type Latch Circuit: 8:8 Mounting Type: Surface Mount Output Type: Tri-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 1584 шт: термін постачання 21-31 дні (днів) |
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74VHCT573AFT(BE) | Toshiba Semiconductor and Storage |
Description: IC LATCH OCTAL D-TYPE 20-TSSOP |
на замовлення 2394 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7SP3125TU,LF | Toshiba Semiconductor and Storage |
Description: SUPPLY BUS BUFFER UNI UF6 |
на замовлення 1461 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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JDP4P02AT(TE85L) | Toshiba Semiconductor and Storage |
Description: SWITCHING DIODE 30V INDEPENDENT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS300,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA USMPackage / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: USM Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount |
на замовлення 2857 шт: термін постачання 21-31 дні (днів) |
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HN1D01F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SM6Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SM6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SS301,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC-70Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-70 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5820 шт: термін постачання 21-31 дні (днів) |
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HN1D02F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SM6Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SM6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN1D02FU(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ES6Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: ES6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1703JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA ESVSupplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 1813 шт: термін постачання 21-31 дні (днів) |
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RN1704JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESVVoltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1705JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESV |
на замовлення 775 шт: термін постачання 21-31 дні (днів) |
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RN1508(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMVSupplier Device Package: SMV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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RN1509(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV |
на замовлення 2765 шт: термін постачання 21-31 дні (днів) |
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RN1511(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA SMVSupplier Device Package: SMV Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 4175 шт: термін постачання 21-31 дні (днів) |
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RN2701JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 4.7kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 3695 шт: термін постачання 21-31 дні (днів) |
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RN2703JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVSupplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 31420 шт: термін постачання 21-31 дні (днів) |
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RN2704JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
на замовлення 3996 шт: термін постачання 21-31 дні (днів) |
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RN2705JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2707JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 1645 шт: термін постачання 21-31 дні (днів) |
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RN2708JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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RN2709JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2710JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
на замовлення 3611 шт: термін постачання 21-31 дні (днів) |
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RN2711JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 3900 шт: термін постачання 21-31 дні (днів) |
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RN2712JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN2713JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESVPart Status: Active Supplier Device Package: ESV Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 3980 шт: термін постачання 21-31 дні (днів) |
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RN2504(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMVPart Status: Active Supplier Device Package: SMV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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RN2507(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV |
на замовлення 1015 шт: термін постачання 21-31 дні (днів) |
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RN2510(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA SMVPart Status: Active Supplier Device Package: SMV Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2511(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4981FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRAN DUAL NPN/PNP 50V 100MA ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4982FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
на замовлення 3250 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4983FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Supplier Device Package: ES6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 3991 шт: термін постачання 21-31 дні (днів) |
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RN4984FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
на замовлення 7800 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4985FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4987FE(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4988FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. |
| TC75W55FK(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 160 kHz
Slew Rate: 0.08V/µs
Current - Supply: 20µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC CMOS 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 160 kHz
Slew Rate: 0.08V/µs
Current - Supply: 20µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 3220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 10+ | 40.52 грн |
| 25+ | 38.09 грн |
| 100+ | 29.15 грн |
| 250+ | 27.08 грн |
| 500+ | 23.05 грн |
| 1000+ | 18.13 грн |
| TC75W58FK,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
Propagation Delay (Max): 800ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
Propagation Delay (Max): 800ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| TC75W59FK(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 5828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.59 грн |
| 10+ | 41.86 грн |
| 25+ | 39.31 грн |
| 100+ | 30.11 грн |
| 250+ | 27.97 грн |
| 500+ | 23.80 грн |
| 1000+ | 18.73 грн |
| TC75S59F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 11+ | 29.40 грн |
| 25+ | 26.86 грн |
| TC75S59FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 3652 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.22 грн |
| 13+ | 24.85 грн |
| 25+ | 23.22 грн |
| 100+ | 17.43 грн |
| 250+ | 16.19 грн |
| 500+ | 13.70 грн |
| 1000+ | 10.41 грн |
| TC7SPN3125CFC(T5L) |
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Виробник: Toshiba Semiconductor and Storage
Description: DUAL SUPPLY BUS BUFFER UNI CST6C
Description: DUAL SUPPLY BUS BUFFER UNI CST6C
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4915-O,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SSM
Description: RF TRANS NPN 30V 550MHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4915-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ SSM
Description: RF TRANS NPN 30V 550MHZ SSM
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 13+ | 24.85 грн |
| 74VHC541FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFF 2V/5.5V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 10076 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.90 грн |
| 16+ | 18.88 грн |
| 25+ | 16.83 грн |
| 100+ | 13.68 грн |
| 250+ | 12.66 грн |
| 500+ | 12.05 грн |
| 1000+ | 11.36 грн |
| 74VHCT541AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 8
на замовлення 3104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 21.27 грн |
| 25+ | 18.95 грн |
| 100+ | 15.43 грн |
| 250+ | 14.31 грн |
| 500+ | 13.64 грн |
| 1000+ | 12.93 грн |
| 74VHC244FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 20-TSSOP
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC BUFF 2V/5.5V 20-TSSOP
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
на замовлення 3728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.90 грн |
| 16+ | 18.88 грн |
| 25+ | 16.83 грн |
| 100+ | 13.68 грн |
| 250+ | 12.66 грн |
| 500+ | 12.05 грн |
| 1000+ | 11.36 грн |
| 74VHCT244AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 23131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.90 грн |
| 16+ | 18.88 грн |
| 25+ | 16.83 грн |
| 100+ | 13.68 грн |
| 250+ | 12.66 грн |
| 500+ | 12.05 грн |
| 1000+ | 11.36 грн |
| TC7SET34FU(T5L,F,T |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTER USV
Description: IC BUFFER NON-INVERTER USV
товару немає в наявності
В кошику
од. на суму грн.
| TC7SP3125CFC(TE85L |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TRNSLTR UNIDIRECTIONAL CST6C
Description: IC TRNSLTR UNIDIRECTIONAL CST6C
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC245FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC TXRX 2V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 8178 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.15 грн |
| 23+ | 13.43 грн |
| 26+ | 11.88 грн |
| 100+ | 9.59 грн |
| 250+ | 8.84 грн |
| 500+ | 8.39 грн |
| 1000+ | 7.88 грн |
| 74VHCT245AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Description: IC TXRX 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
на замовлення 11998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 18+ | 16.94 грн |
| 25+ | 15.10 грн |
| 100+ | 12.25 грн |
| 250+ | 11.33 грн |
| 500+ | 10.78 грн |
| 1000+ | 10.15 грн |
| 74VHC574FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 115 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 115 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 18294 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 17+ | 18.28 грн |
| 25+ | 16.33 грн |
| 100+ | 13.26 грн |
| 250+ | 12.28 грн |
| 500+ | 11.68 грн |
| 1000+ | 11.01 грн |
| 74VHCT574AFT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Description: IC D-TYPE POS TRG SNGL 20TSSOP
на замовлення 3011 шт:
термін постачання 21-31 дні (днів)
| TC7SH34FU(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Description: IC GATE L-MOS USV
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC540FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 116335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.44 грн |
| 10+ | 35.00 грн |
| 25+ | 28.95 грн |
| 100+ | 20.71 грн |
| 250+ | 17.54 грн |
| 500+ | 15.58 грн |
| 1000+ | 13.72 грн |
| 74VHCT540AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUFF 4.5V/5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 5920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 18+ | 16.79 грн |
| 25+ | 14.98 грн |
| 100+ | 12.15 грн |
| 250+ | 11.24 грн |
| 500+ | 10.69 грн |
| 1000+ | 10.07 грн |
| 74VHC240FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20TSSOP
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC BUFFER INVERT 5.5V 20TSSOP
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
на замовлення 2188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.44 грн |
| 10+ | 35.15 грн |
| 25+ | 29.07 грн |
| 100+ | 20.80 грн |
| 250+ | 17.61 грн |
| 500+ | 15.65 грн |
| 1000+ | 13.77 грн |
| 74VHCT240AFT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER DUAL 4-INPUT 20TSSOP
Description: IC INVERTER DUAL 4-INPUT 20TSSOP
на замовлення 2391 шт:
термін постачання 21-31 дні (днів)
| 74VHC573FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC D-TYPE 8:8 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 1584 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 16+ | 19.33 грн |
| 25+ | 17.22 грн |
| 100+ | 13.99 грн |
| 250+ | 12.96 грн |
| 500+ | 12.34 грн |
| 1000+ | 11.65 грн |
| 74VHCT573AFT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
| TC7SP3125TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: SUPPLY BUS BUFFER UNI UF6
Description: SUPPLY BUS BUFFER UNI UF6
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
| JDP4P02AT(TE85L) |
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Виробник: Toshiba Semiconductor and Storage
Description: SWITCHING DIODE 30V INDEPENDENT
Description: SWITCHING DIODE 30V INDEPENDENT
товару немає в наявності
В кошику
од. на суму грн.
| 1SS300,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USM
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Description: DIODE ARRAY GP 80V 100MA USM
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USM
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
на замовлення 2857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 41+ | 7.39 грн |
| 100+ | 4.57 грн |
| 500+ | 3.12 грн |
| 1000+ | 2.74 грн |
| HN1D01F(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.45 грн |
| 1SS301,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SC-70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.17 грн |
| 39+ | 7.84 грн |
| 100+ | 4.81 грн |
| 500+ | 3.29 грн |
| 1000+ | 2.89 грн |
| HN1D02F(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SM6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SM6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| HN1D02FU(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Description: DIODE ARRAY GP 80V 100MA ES6
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: ES6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| RN1703JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V 100MA ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 1813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 20+ | 15.07 грн |
| 100+ | 9.49 грн |
| 500+ | 6.62 грн |
| 1000+ | 5.88 грн |
| RN1704JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: TRANS 2NPN PREBIAS 0.1W ESV
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| RN1705JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 13+ | 24.25 грн |
| 100+ | 13.76 грн |
| 500+ | 8.55 грн |
| RN1508(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.27 грн |
| 100+ | 10.22 грн |
| 500+ | 7.13 грн |
| 1000+ | 6.33 грн |
| RN1509(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 2765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 13+ | 24.55 грн |
| 100+ | 13.91 грн |
| 500+ | 8.64 грн |
| 1000+ | 6.63 грн |
| RN1511(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Supplier Device Package: SMV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V 100MA SMV
Supplier Device Package: SMV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 4175 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 19+ | 15.74 грн |
| 100+ | 9.89 грн |
| 500+ | 6.91 грн |
| 1000+ | 6.14 грн |
| RN2701JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 3695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 12+ | 26.56 грн |
| 100+ | 15.06 грн |
| 500+ | 9.36 грн |
| 1000+ | 7.18 грн |
| 2000+ | 6.24 грн |
| RN2703JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 31420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 12+ | 25.30 грн |
| 100+ | 14.34 грн |
| 500+ | 8.91 грн |
| 1000+ | 6.83 грн |
| 2000+ | 5.94 грн |
| RN2704JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
на замовлення 3996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 12+ | 25.00 грн |
| 100+ | 14.17 грн |
| 500+ | 8.81 грн |
| 1000+ | 6.75 грн |
| 2000+ | 5.87 грн |
| RN2705JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 12+ | 26.49 грн |
| 100+ | 15.03 грн |
| 500+ | 9.34 грн |
| 1000+ | 7.16 грн |
| 2000+ | 6.22 грн |
| RN2707JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 1645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 12+ | 26.56 грн |
| 100+ | 15.06 грн |
| 500+ | 9.36 грн |
| 1000+ | 7.18 грн |
| RN2708JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 12+ | 26.56 грн |
| 100+ | 15.06 грн |
| 500+ | 9.36 грн |
| 1000+ | 7.18 грн |
| 2000+ | 6.24 грн |
| RN2709JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 25.82 грн |
| 100+ | 14.63 грн |
| 500+ | 9.09 грн |
| 1000+ | 6.97 грн |
| 2000+ | 6.06 грн |
| RN2710JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
на замовлення 3611 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 12+ | 25.00 грн |
| 100+ | 14.17 грн |
| 500+ | 8.81 грн |
| 1000+ | 6.75 грн |
| 2000+ | 5.87 грн |
| RN2711JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 25.82 грн |
| 100+ | 14.63 грн |
| 500+ | 9.09 грн |
| 1000+ | 6.97 грн |
| 2000+ | 6.06 грн |
| RN2712JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 25.82 грн |
| 100+ | 14.63 грн |
| 500+ | 9.09 грн |
| 1000+ | 6.97 грн |
| 2000+ | 6.06 грн |
| RN2713JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ESV
Part Status: Active
Supplier Device Package: ESV
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 12+ | 25.82 грн |
| 100+ | 14.63 грн |
| 500+ | 9.09 грн |
| 1000+ | 6.97 грн |
| 2000+ | 6.06 грн |
| RN2504(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.20 грн |
| 12+ | 26.56 грн |
| 100+ | 15.06 грн |
| RN2507(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.87 грн |
| 12+ | 25.00 грн |
| 100+ | 14.17 грн |
| 500+ | 8.81 грн |
| 1000+ | 6.75 грн |
| RN2510(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2PNP 50V 100MA SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 19+ | 15.74 грн |
| 100+ | 9.89 грн |
| 500+ | 6.91 грн |
| 1000+ | 6.14 грн |
| RN2511(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RN4981FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
товару немає в наявності
В кошику
од. на суму грн.
| RN4982FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 3250 шт:
термін постачання 21-31 дні (днів)
| RN4983FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 3991 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.40 грн |
| 100+ | 5.82 грн |
| 500+ | 4.00 грн |
| 1000+ | 3.52 грн |
| 2000+ | 3.12 грн |
| RN4984FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 7800 шт:
термін постачання 21-31 дні (днів)
| RN4985FE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| RN4987FE(T5L,F,T) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
товару немає в наявності
В кошику
од. на суму грн.
| RN4988FE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.










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