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GS-065-004-1-L-MR GS-065-004-1-L-MR Infineon Technologies Canada Inc. Description: GS-065-004-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-004-1-L-MR GS-065-004-1-L-MR Infineon Technologies Canada Inc. Description: GS-065-004-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-004-1-L-TR GS-065-004-1-L-TR Infineon Technologies Canada Inc. Description: GS-065-004-1-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-004-6-L-MR GS-065-004-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-004-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
250+129.10 грн
500+115.01 грн
750+107.04 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-004-6-L-MR GS-065-004-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-004-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
2+289.75 грн
10+182.56 грн
100+145.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS-065-004-6-L-TR GS-065-004-6-L-TR Infineon Technologies Canada Inc. Description: GS-065-004-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-1-L-MR GS-065-008-1-L-MR Infineon Technologies Canada Inc. Description: GS-065-008-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-1-L-MR GS-065-008-1-L-MR Infineon Technologies Canada Inc. Description: GS-065-008-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-1-L-TR GS-065-008-1-L-TR Infineon Technologies Canada Inc. Description: GS-065-008-1-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-6-L-MR GS-065-008-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-008-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
250+199.10 грн
500+187.51 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-008-6-L-MR GS-065-008-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-008-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
на замовлення 942 шт:
термін постачання 21-31 дні (днів)
1+418.90 грн
10+282.77 грн
100+211.04 грн
В кошику  од. на суму  грн.
GS-065-008-6-L-TR GS-065-008-6-L-TR Infineon Technologies Canada Inc. Description: GS-065-008-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-1-L-MR GS-065-011-1-L-MR Infineon Technologies Canada Inc. Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-1-L-MR GS-065-011-1-L-MR Infineon Technologies Canada Inc. Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
1+530.66 грн
10+345.43 грн
100+251.44 грн
В кошику  од. на суму  грн.
GS-065-011-1-L-TR GS-065-011-1-L-TR Infineon Technologies Canada Inc. Description: GS-065-011-1-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-2-L-MR GS-065-011-2-L-MR Infineon Technologies Canada Inc. Description: GS-065-011-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+458.64 грн
10+296.24 грн
100+213.50 грн
В кошику  од. на суму  грн.
GS-065-011-2-L-MR GS-065-011-2-L-MR Infineon Technologies Canada Inc. Description: GS-065-011-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-2-L-TR GS-065-011-2-L-TR Infineon Technologies Canada Inc. Description: GS-065-011-2-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-L-MR GS-065-011-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-011-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-L-MR GS-065-011-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-011-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-LR-MR GS-065-011-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-011-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+450.36 грн
10+304.61 грн
100+228.54 грн
В кошику  од. на суму  грн.
GS-065-011-6-LR-MR GS-065-011-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-011-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+216.06 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-011-6-LR-TR GS-065-011-6-LR-TR Infineon Technologies Canada Inc. Description: GS-065-011-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-L-TR GS-065-011-6-L-TR Infineon Technologies Canada Inc. Description: GS-065-011-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-L-MR GS-065-014-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-014-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-L-MR GS-065-014-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-014-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-LR-MR GS-065-014-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-014-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-LR-MR GS-065-014-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-014-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
1+562.95 грн
10+385.21 грн
100+292.46 грн
В кошику  од. на суму  грн.
GS-065-014-6-LR-TR GS-065-014-6-LR-TR Infineon Technologies Canada Inc. Description: GS-065-014-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-L-TR GS-065-014-6-L-TR Infineon Technologies Canada Inc. Description: GS-065-014-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-018-2-L-MR GS-065-018-2-L-MR Infineon Technologies Canada Inc. Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-018-2-L-MR GS-065-018-2-L-MR Infineon Technologies Canada Inc. Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+747.56 грн
10+493.63 грн
100+372.27 грн
В кошику  од. на суму  грн.
GS-065-018-2-L-TR GS-065-018-2-L-TR Infineon Technologies Canada Inc. Description: GS-065-018-2-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-018-6-LR-MR GS-065-018-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+368.01 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-018-6-LR-MR GS-065-018-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
1+686.30 грн
10+473.46 грн
100+363.38 грн
В кошику  од. на суму  грн.
GS-065-018-6-LR-TR GS-065-018-6-LR-TR Infineon Technologies Canada Inc. Description: GS-065-018-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-2-L-TR GS-065-030-2-L-TR Infineon Technologies Canada Inc. Description: GS-065-030-2-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-6-LL-TR GS-065-030-6-LL-TR Infineon Technologies Canada Inc. Description: GS-065-030-6-LL-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-6-LR-MR GS-065-030-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-6-LR-MR GS-065-030-6-LR-MR Infineon Technologies Canada Inc. Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+987.65 грн
10+693.17 грн
100+561.12 грн
В кошику  од. на суму  грн.
GS-065-030-6-LR-TR GS-065-030-6-LR-TR Infineon Technologies Canada Inc. Description: GS-065-030-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-6-LT-MR GS-065-030-6-LT-MR Infineon Technologies Canada Inc. Description: GS-065-030-6-LT-MR
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-6-LT-MR GS-065-030-6-LT-MR Infineon Technologies Canada Inc. Description: GS-065-030-6-LT-MR
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-6-LT-TR GS-065-030-6-LT-TR Infineon Technologies Canada Inc. Description: GS-065-030-6-LT-TR
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-030-LL-MR GS-065-030-LL-MR Infineon Technologies Canada Inc. Description: GS-065-030-LL-MR
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-060-5-B-A-MR GS-065-060-5-B-A-MR Infineon Technologies Canada Inc. Description: GS-065-060-5-B-A-MR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-060-5-B-A-MR GS-065-060-5-B-A-MR Infineon Technologies Canada Inc. Description: GS-065-060-5-B-A-MR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-060-5-B-A-TR GS-065-060-5-B-A-TR Infineon Technologies Canada Inc. Description: GS-065-060-5-B-A-TR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-060-5-T-A-MR GS-065-060-5-T-A-MR Infineon Technologies Canada Inc. Description: GS-065-060-5-T-A-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-060-5-T-A-MR GS-065-060-5-T-A-MR Infineon Technologies Canada Inc. Description: GS-065-060-5-T-A-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
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GS-065-060-5-T-A-TR GS-065-060-5-T-A-TR Infineon Technologies Canada Inc. Description: GS-065-060-5-T-A-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товару немає в наявності
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GS61004B-TR GS61004B-TR Infineon Technologies Canada Inc. Description: GS61004B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS61008P-TR GS61008P-TR Infineon Technologies Canada Inc. Description: GS61008P-TR
Packaging: Tape & Reel (TR)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS61008T-MR GS61008T-MR Infineon Technologies Canada Inc. Description: GS61008T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS61008T-MR GS61008T-MR Infineon Technologies Canada Inc. Description: GS61008T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+716.11 грн
10+481.83 грн
100+432.06 грн
В кошику  од. на суму  грн.
GS61008T-TR GS61008T-TR Infineon Technologies Canada Inc. Description: GS61008T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GS66502B-MR GS66502B-MR Infineon Technologies Canada Inc. Description: GS66502B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS66502B-MR GS66502B-MR Infineon Technologies Canada Inc. Description: GS66502B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
1+1070.43 грн
10+753.04 грн
100+616.60 грн
В кошику  од. на суму  грн.
GS66502B-TR GS66502B-TR Infineon Technologies Canada Inc. Description: GS66502B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS66504B-MR GS66504B-MR Infineon Technologies Canada Inc. Description: GS66504B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+680.97 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-004-1-L-MR
GS-065-004-1-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-004-1-L-MR
GS-065-004-1-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
товару немає в наявності
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GS-065-004-1-L-TR
GS-065-004-1-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-1-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-004-6-L-MR
GS-065-004-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+129.10 грн
500+115.01 грн
750+107.04 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-004-6-L-MR
GS-065-004-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+289.75 грн
10+182.56 грн
100+145.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS-065-004-6-L-TR
GS-065-004-6-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-1-L-MR
GS-065-008-1-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-1-L-MR
GS-065-008-1-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-1-L-TR
GS-065-008-1-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-1-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 1.4V @ 1.74mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-008-6-L-MR
GS-065-008-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+199.10 грн
500+187.51 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-008-6-L-MR
GS-065-008-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
на замовлення 942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.90 грн
10+282.77 грн
100+211.04 грн
В кошику  од. на суму  грн.
GS-065-008-6-L-TR
GS-065-008-6-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-1-L-MR
GS-065-011-1-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-1-L-MR
GS-065-011-1-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+530.66 грн
10+345.43 грн
100+251.44 грн
В кошику  од. на суму  грн.
GS-065-011-1-L-TR
GS-065-011-1-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-1-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-2-L-MR
GS-065-011-2-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+458.64 грн
10+296.24 грн
100+213.50 грн
В кошику  од. на суму  грн.
GS-065-011-2-L-MR
GS-065-011-2-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-2-L-TR
GS-065-011-2-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-2-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-L-MR
GS-065-011-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-L-MR
GS-065-011-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-LR-MR
GS-065-011-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+450.36 грн
10+304.61 грн
100+228.54 грн
В кошику  од. на суму  грн.
GS-065-011-6-LR-MR
GS-065-011-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+216.06 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-011-6-LR-TR
GS-065-011-6-LR-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-011-6-L-TR
GS-065-011-6-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-011-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-L-MR
GS-065-014-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-L-MR
GS-065-014-6-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-LR-MR
GS-065-014-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-LR-MR
GS-065-014-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+562.95 грн
10+385.21 грн
100+292.46 грн
В кошику  од. на суму  грн.
GS-065-014-6-LR-TR
GS-065-014-6-LR-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-014-6-L-TR
GS-065-014-6-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-018-2-L-MR
GS-065-018-2-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-018-2-L-MR
GS-065-018-2-L-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+747.56 грн
10+493.63 грн
100+372.27 грн
В кошику  од. на суму  грн.
GS-065-018-2-L-TR
GS-065-018-2-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-018-2-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS-065-018-6-LR-MR
GS-065-018-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+368.01 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS-065-018-6-LR-MR
GS-065-018-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+686.30 грн
10+473.46 грн
100+363.38 грн
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GS-065-018-6-LR-TR
GS-065-018-6-LR-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-018-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
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GS-065-030-2-L-TR
GS-065-030-2-L-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-2-L-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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GS-065-030-6-LL-TR
GS-065-030-6-LL-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LL-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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GS-065-030-6-LR-MR
GS-065-030-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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GS-065-030-6-LR-MR
GS-065-030-6-LR-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+987.65 грн
10+693.17 грн
100+561.12 грн
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GS-065-030-6-LR-TR
GS-065-030-6-LR-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LR-TR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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GS-065-030-6-LT-MR
GS-065-030-6-LT-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LT-MR
Packaging: Cut Tape (CT)
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GS-065-030-6-LT-MR
GS-065-030-6-LT-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LT-MR
Packaging: Tape & Reel (TR)
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GS-065-030-6-LT-TR
GS-065-030-6-LT-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-6-LT-TR
Packaging: Tape & Reel (TR)
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GS-065-030-LL-MR
GS-065-030-LL-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-030-LL-MR
Packaging: Tape & Reel (TR)
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GS-065-060-5-B-A-MR
GS-065-060-5-B-A-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-060-5-B-A-MR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
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GS-065-060-5-B-A-MR
GS-065-060-5-B-A-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-060-5-B-A-MR
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
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GS-065-060-5-B-A-TR
GS-065-060-5-B-A-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-060-5-B-A-TR
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
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GS-065-060-5-T-A-MR
GS-065-060-5-T-A-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-060-5-T-A-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
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GS-065-060-5-T-A-MR
GS-065-060-5-T-A-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-060-5-T-A-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
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GS-065-060-5-T-A-TR
GS-065-060-5-T-A-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-060-5-T-A-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
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GS61004B-TR
GS61004B-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS61004B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
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GS61008P-TR
GS61008P-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS61008P-TR
Packaging: Tape & Reel (TR)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
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GS61008T-MR
GS61008T-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS61008T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
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GS61008T-MR
GS61008T-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS61008T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+716.11 грн
10+481.83 грн
100+432.06 грн
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GS61008T-TR
GS61008T-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS61008T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
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GS66502B-MR
GS66502B-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS66502B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
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GS66502B-MR
GS66502B-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS66502B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1070.43 грн
10+753.04 грн
100+616.60 грн
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GS66502B-TR
GS66502B-TR
Виробник: Infineon Technologies Canada Inc.
Description: GS66502B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
товару немає в наявності
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GS66504B-MR
GS66504B-MR
Виробник: Infineon Technologies Canada Inc.
Description: GS66504B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+680.97 грн
Мінімальне замовлення: 250
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