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ISO1H816GAUMA1 ISO1H816GAUMA1 Infineon Technologies ISO1H816_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f700bb736a89 Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Packaging: Cut Tape (CT)
Features: Auto Restart, Galvanic Isolation, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
1+599.24 грн
10+447.46 грн
25+415.17 грн
100+356.34 грн
250+340.48 грн
В кошику  од. на суму  грн.
ISO1I811TXUMA1 ISO1I811TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845 Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+230.52 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ISO1I813TXUMA1 ISO1I813TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 8
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+269.11 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ISO1I811TXUMA1 ISO1I811TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845 Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 6843 шт:
термін постачання 21-31 дні (днів)
1+459.98 грн
10+397.27 грн
25+375.53 грн
100+305.43 грн
250+289.77 грн
500+260.01 грн
1000+215.69 грн
В кошику  од. на суму  грн.
ISO1I813TXUMA1 ISO1I813TXUMA1 Infineon Technologies Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 8
на замовлення 6595 шт:
термін постачання 21-31 дні (днів)
1+492.61 грн
10+428.53 грн
25+408.64 грн
100+332.99 грн
250+318.02 грн
500+289.96 грн
1000+248.41 грн
В кошику  од. на суму  грн.
IRFTS8342TRPBF IRFTS8342TRPBF Infineon Technologies irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1 Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+10.06 грн
6000+9.09 грн
9000+8.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLH7134TRPBF IRLH7134TRPBF Infineon Technologies IRLH7134PbF.pdf Description: MOSFET N-CH 40V 26A/85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS6342TRPBF IRLTS6342TRPBF Infineon Technologies irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+10.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFTS9342TRPBF IRFTS9342TRPBF Infineon Technologies irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3 Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+10.48 грн
6000+9.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLTS2242TRPBF IRLTS2242TRPBF Infineon Technologies irlts2242pbf.pdf?fileId=5546d462533600a401535671e9a12718 Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+9.00 грн
6000+8.32 грн
9000+7.98 грн
15000+7.48 грн
21000+7.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR812TRPBF IRFR812TRPBF Infineon Technologies irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128 Description: MOSFET N-CH 500V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR812PBF IRFR812PBF Infineon Technologies irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128 Description: MOSFET N-CH 500V 3.6A DPAK
товару немає в наявності
В кошику  од. на суму  грн.
IRFR825TRPBF IRFR825TRPBF Infineon Technologies irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR825PBF IRFR825PBF Infineon Technologies irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7107TRPBF IRFH7107TRPBF Infineon Technologies IRFH7107PbF.pdf Description: MOSFET N-CH 75V 14A/75A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFTS8342TRPBF IRFTS8342TRPBF Infineon Technologies irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1 Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
на замовлення 13943 шт:
термін постачання 21-31 дні (днів)
9+38.99 грн
13+23.99 грн
100+12.52 грн
500+11.69 грн
1000+10.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRLH7134TRPBF IRLH7134TRPBF Infineon Technologies IRLH7134PbF.pdf Description: MOSFET N-CH 40V 26A/85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS6342TRPBF IRLTS6342TRPBF Infineon Technologies irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 4483 шт:
термін постачання 21-31 дні (днів)
8+40.59 грн
12+25.98 грн
100+16.97 грн
500+12.05 грн
1000+10.80 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRFTS9342TRPBF IRFTS9342TRPBF Infineon Technologies irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3 Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
на замовлення 9702 шт:
термін постачання 21-31 дні (днів)
7+46.16 грн
11+28.12 грн
100+14.40 грн
500+12.75 грн
1000+11.49 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRLTS2242TRPBF IRLTS2242TRPBF Infineon Technologies irlts2242pbf.pdf?fileId=5546d462533600a401535671e9a12718 Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
на замовлення 34314 шт:
термін постачання 21-31 дні (днів)
8+44.57 грн
11+28.35 грн
100+14.19 грн
500+12.64 грн
1000+11.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRFR825TRPBF IRFR825TRPBF Infineon Technologies irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a Description: MOSFET N-CH 500V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
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IRFH7107TR2PBF IRFH7107TR2PBF Infineon Technologies IRFH7107PbF.pdf Description: MOSFET N-CH 75V 14A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
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CY14V101Q3-SFXI CY14V101Q3-SFXI Infineon Technologies Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
1+1248.63 грн
10+1113.03 грн
25+1097.85 грн
50+1017.35 грн
100+938.27 грн
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CY7C1021DV33-10ZSXA CY7C1021DV33-10ZSXA Infineon Technologies Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 44TSOP II
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CY7C1263XV18-633BZXC CY7C1263XV18-633BZXC Infineon Technologies Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1265XV18-600BZXC CY7C1265XV18-600BZXC Infineon Technologies Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 600 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1440AV25-250BZXI CY7C1440AV25-250BZXI Infineon Technologies Infineon-CY7C1440AV25_CY7C1446AV25_36-Mbit_(1_M_36_512_K_72)_Pipelined_Sync_SRAM_Datasheet-AdditionalTechnicalInformation-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec469bb39d8 Description: IC SRAM 36MBIT PARALLEL 165FBGA
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CY7C1470BV25-250BZXC CY7C1470BV25-250BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
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CY7C1565XV18-633BZXC CY7C1565XV18-633BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1568XV18-600BZXC CY7C1568XV18-600BZXC Infineon Technologies Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750 Description: IC SRAM 72MBIT PAR 165FBGA
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CY7C1568XV18-633BZXC CY7C1568XV18-633BZXC Infineon Technologies Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750 Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1612KV18-250BZXI CY7C1612KV18-250BZXI Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+21416.83 грн
10+18969.02 грн
25+18334.08 грн
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CY7C1612KV18-300BZXI CY7C1612KV18-300BZXI Infineon Technologies Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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CY7C1613KV18-300BZI CY7C1613KV18-300BZI Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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CY7C1615KV18-250BZXC CY7C1615KV18-250BZXC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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CY7C1618KV18-300BZXC CY7C1618KV18-300BZXC Infineon Technologies Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
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CY7C1643KV18-450BZI CY7C1643KV18-450BZI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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CY7C1645KV18-400BZXI CY7C1645KV18-400BZXI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+23370.54 грн
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CY7C1645KV18-450BZXI CY7C1645KV18-450BZXI Infineon Technologies download Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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CY7C1650KV18-450BZC CY7C1650KV18-450BZC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
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CY7C1663KV18-550BZXC CY7C1663KV18-550BZXC Infineon Technologies Infineon-CY7C1663KV18_CY7C1665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec224e7370c&utm_source=cypress&utm_medium=referral&utm_campaig Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
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CY7C1670KV18-450BZXC CY7C1670KV18-450BZXC Infineon Technologies Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
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CY7C2262XV18-366BZXC CY7C2262XV18-366BZXC Infineon Technologies Infineon-CY7C2262XV18_CY7C2264XV18_36-Mbit_QDR(R)_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec28c84377c Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2264XV18-366BZXC CY7C2264XV18-366BZXC Infineon Technologies Infineon-CY7C2262XV18_CY7C2264XV18_36-Mbit_QDR(R)_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec28c84377c Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2265XV18-633BZXC CY7C2265XV18-633BZXC Infineon Technologies Infineon-CY7C2263XV18_CY7C2265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec292d63783 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C2564XV18-366BZXC CY7C2564XV18-366BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C2564XV18-450BZXC CY7C2564XV18-450BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C2665KV18-450BZI CY7C2665KV18-450BZI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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CY7C2665KV18-450BZXI CY7C2665KV18-450BZXI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2665KV18-550BZI CY7C2665KV18-550BZI Infineon Technologies Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C2670KV18-550BZI CY7C2670KV18-550BZI Infineon Technologies Infineon-CY7C2670KV18_144-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec247eb3736 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BSC082N10LSGATMA1 BSC082N10LSGATMA1 Infineon Technologies BSC082N10LS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a6011647faad240719 Description: MOSFET N-CH 100V 13.8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
на замовлення 4960 шт:
термін постачання 21-31 дні (днів)
2+265.80 грн
10+166.98 грн
100+116.69 грн
500+89.32 грн
1000+82.84 грн
2000+80.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC0901NSI BSC0901NSI Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A 8TDSON
на замовлення 7499 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0904NSI BSC0904NSI Infineon Technologies BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef Description: MOSFET N-CH 30V 20A 8TDSON
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0906NSATMA1 BSC0906NSATMA1 Infineon Technologies BSC0906NS_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f0130986c816b2f8c Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
на замовлення 7624 шт:
термін постачання 21-31 дні (днів)
5+65.26 грн
10+39.08 грн
100+25.38 грн
500+18.27 грн
1000+16.48 грн
2000+14.97 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 Infineon Technologies BSC109N10NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b897500128247bdae36f3f Description: MOSFET N-CH 100V 63A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 29461 шт:
термін постачання 21-31 дні (днів)
3+154.39 грн
10+94.80 грн
100+64.17 грн
500+47.93 грн
1000+45.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC196N10NSGATMA1 BSC196N10NSGATMA1 Infineon Technologies BSC196N10NS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601164800549d071f Description: MOSFET N-CH 100V 8.5A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
3+124.15 грн
10+76.40 грн
100+51.38 грн
500+38.15 грн
1000+34.91 грн
2000+32.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC22DN20NS3 G BSC22DN20NS3 G Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A 8TDSON
на замовлення 11863 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 Infineon Technologies BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
на замовлення 13381 шт:
термін постачання 21-31 дні (днів)
2+175.08 грн
10+108.36 грн
100+73.89 грн
500+55.51 грн
1000+54.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC882N03MSGATMA1 BSC882N03MSGATMA1 Infineon Technologies BSC882N03MS_G.pdf Description: MOSFET N-CH 34V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
ISO1H816GAUMA1 ISO1H816_V01.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a304320d39d590120f700bb736a89
ISO1H816GAUMA1
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 DSO-36
Packaging: Cut Tape (CT)
Features: Auto Restart, Galvanic Isolation, Status Flag
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 35V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:8
Supplier Device Package: PG-DSO-36
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+599.24 грн
10+447.46 грн
25+415.17 грн
100+356.34 грн
250+340.48 грн
В кошику  од. на суму  грн.
ISO1I811TXUMA1 Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845
ISO1I811TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+230.52 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ISO1I813TXUMA1 Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe
ISO1I813TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 8
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+269.11 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ISO1I811TXUMA1 Preliminary_Datasheet_ISO1I811T_V1_0.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ea425a4012ed83864253845
ISO1I811TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Part Status: Active
Number of Channels: 8
на замовлення 6843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+459.98 грн
10+397.27 грн
25+375.53 грн
100+305.43 грн
250+289.77 грн
500+260.01 грн
1000+215.69 грн
В кошику  од. на суму  грн.
ISO1I813TXUMA1 Preliminary_Datasheet_ISO1I813T_V10.pdf?folderId=db3a30431b3e89eb011b8dbc543010a5&fileId=db3a30432ee77f32012f0ae5c60a10fe
ISO1I813TXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOL 500VAC 8CH SPI 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.85V ~ 5.5V
Technology: Magnetic Coupling
Voltage - Isolation: 500VAC
Inputs - Side 1/Side 2: 8/0
Supplier Device Package: 48-TSSOP
Common Mode Transient Immunity (Min): 25kV/µs
Isolated Power: No
Channel Type: Unidirectional
Number of Channels: 8
на замовлення 6595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+492.61 грн
10+428.53 грн
25+408.64 грн
100+332.99 грн
250+318.02 грн
500+289.96 грн
1000+248.41 грн
В кошику  од. на суму  грн.
IRFTS8342TRPBF irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1
IRFTS8342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.06 грн
6000+9.09 грн
9000+8.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLH7134TRPBF IRLH7134PbF.pdf
IRLH7134TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS6342TRPBF irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a
IRLTS6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFTS9342TRPBF irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3
IRFTS9342TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.48 грн
6000+9.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLTS2242TRPBF irlts2242pbf.pdf?fileId=5546d462533600a401535671e9a12718
IRLTS2242TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.00 грн
6000+8.32 грн
9000+7.98 грн
15000+7.48 грн
21000+7.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR812TRPBF irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128
IRFR812TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
товару немає в наявності
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IRFR812PBF irfr812pbf.pdf?fileId=5546d462533600a401535635d2f02128
IRFR812PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A DPAK
товару немає в наявності
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IRFR825TRPBF irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a
IRFR825TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
товару немає в наявності
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IRFR825PBF irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a
IRFR825PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
товару немає в наявності
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IRFH7107TRPBF IRFH7107PbF.pdf
IRFH7107TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
товару немає в наявності
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IRFTS8342TRPBF irfts8342pbf.pdf?fileId=5546d462533600a40153563ae3bd21f1
IRFTS8342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
на замовлення 13943 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.99 грн
13+23.99 грн
100+12.52 грн
500+11.69 грн
1000+10.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRLH7134TRPBF IRLH7134PbF.pdf
IRLH7134TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 26A/85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS6342TRPBF irlts6342pbf.pdf?fileId=5546d462533600a401535671f35a271a
IRLTS6342TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8.3A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 25 V
на замовлення 4483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.59 грн
12+25.98 грн
100+16.97 грн
500+12.05 грн
1000+10.80 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRFTS9342TRPBF irfts9342pbf.pdf?fileId=5546d462533600a40153563aeabc21f3
IRFTS9342TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 25 V
на замовлення 9702 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.16 грн
11+28.12 грн
100+14.40 грн
500+12.75 грн
1000+11.49 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRLTS2242TRPBF irlts2242pbf.pdf?fileId=5546d462533600a401535671e9a12718
IRLTS2242TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 10 V
на замовлення 34314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.57 грн
11+28.35 грн
100+14.19 грн
500+12.64 грн
1000+11.53 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRFR825TRPBF irfr825pbf.pdf?fileId=5546d462533600a401535635dbec212a
IRFR825TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7107TR2PBF IRFH7107PbF.pdf
IRFH7107TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
товару немає в наявності
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CY14V101Q3-SFXI Infineon-CY14V101Q3-SFXI-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0382a34be
CY14V101Q3-SFXI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
на замовлення 660 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1248.63 грн
10+1113.03 грн
25+1097.85 грн
50+1017.35 грн
100+938.27 грн
В кошику  од. на суму  грн.
CY7C1021DV33-10ZSXA Infineon-CY7C1021DV33_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ca4237bd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021DV33-10ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
товару немає в наявності
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CY7C1263XV18-633BZXC Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772
CY7C1263XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1265XV18-600BZXC Infineon-CY7C1263XV18_CY7C1265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec281113772
CY7C1265XV18-600BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 600 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1440AV25-250BZXI Infineon-CY7C1440AV25_CY7C1446AV25_36-Mbit_(1_M_36_512_K_72)_Pipelined_Sync_SRAM_Datasheet-AdditionalTechnicalInformation-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec469bb39d8
CY7C1440AV25-250BZXI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1470BV25-250BZXC download
CY7C1470BV25-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1565XV18-633BZXC download
CY7C1565XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1568XV18-600BZXC Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750
CY7C1568XV18-600BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1568XV18-633BZXC Infineon-CY7C1568XV18_CY7C1570XV18_72-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec25d123750
CY7C1568XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1612KV18-250BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-250BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21416.83 грн
10+18969.02 грн
25+18334.08 грн
В кошику  од. на суму  грн.
CY7C1612KV18-300BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1612KV18-300BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1613KV18-300BZI Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1613KV18-300BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1615KV18-250BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1615KV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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CY7C1618KV18-300BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
CY7C1618KV18-300BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
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CY7C1643KV18-450BZI download
CY7C1643KV18-450BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1645KV18-400BZXI download
CY7C1645KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+23370.54 грн
В кошику  од. на суму  грн.
CY7C1645KV18-450BZXI download
CY7C1645KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1650KV18-450BZC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1650KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1663KV18-550BZXC Infineon-CY7C1663KV18_CY7C1665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec224e7370c&utm_source=cypress&utm_medium=referral&utm_campaig
CY7C1663KV18-550BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1670KV18-450BZXC Infineon-CY7C1668KV18_CY7C1670KV18_144-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec29fe53791
CY7C1670KV18-450BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2262XV18-366BZXC Infineon-CY7C2262XV18_CY7C2264XV18_36-Mbit_QDR(R)_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec28c84377c
CY7C2262XV18-366BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2264XV18-366BZXC Infineon-CY7C2262XV18_CY7C2264XV18_36-Mbit_QDR(R)_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec28c84377c
CY7C2264XV18-366BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2265XV18-633BZXC Infineon-CY7C2263XV18_CY7C2265XV18_36-Mbit_QDR_II+_Xtreme_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec292d63783
CY7C2265XV18-633BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2564XV18-366BZXC download
CY7C2564XV18-366BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 366 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C2564XV18-450BZXC download
CY7C2564XV18-450BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2665KV18-450BZI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2665KV18-450BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2665KV18-450BZXI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2665KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2665KV18-550BZI Infineon-CY7C2663KV18_CY7C2665KV18_144-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec22b793711
CY7C2665KV18-550BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C2670KV18-550BZI Infineon-CY7C2670KV18_144-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec247eb3736
CY7C2670KV18-550BZI
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BSC082N10LSGATMA1 BSC082N10LS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a6011647faad240719
BSC082N10LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13.8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
на замовлення 4960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+265.80 грн
10+166.98 грн
100+116.69 грн
500+89.32 грн
1000+82.84 грн
2000+80.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC0901NSI BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSI
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A 8TDSON
на замовлення 7499 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0904NSI BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef
BSC0904NSI
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8TDSON
на замовлення 324 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC0906NSATMA1 BSC0906NS_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f0130986c816b2f8c
BSC0906NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
на замовлення 7624 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+65.26 грн
10+39.08 грн
100+25.38 грн
500+18.27 грн
1000+16.48 грн
2000+14.97 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC109N10NS3GATMA1 BSC109N10NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b897500128247bdae36f3f
BSC109N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 63A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 46A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 29461 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.39 грн
10+94.80 грн
100+64.17 грн
500+47.93 грн
1000+45.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC196N10NSGATMA1 BSC196N10NS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601164800549d071f
BSC196N10NSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.5A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
на замовлення 4996 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.15 грн
10+76.40 грн
100+51.38 грн
500+38.15 грн
1000+34.91 грн
2000+32.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC22DN20NS3 G BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
BSC22DN20NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TDSON
на замовлення 11863 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC360N15NS3GATMA1 BSC360N15NS3_Rev2.0.pdf?folderId=db3a304325305e6d01254a567c041b4e&fileId=db3a304328c6bd5c012936a5026a2e2c
BSC360N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 75 V
на замовлення 13381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.08 грн
10+108.36 грн
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BSC882N03MSGATMA1 BSC882N03MS_G.pdf
BSC882N03MSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
товару немає в наявності
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