Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117840) > Сторінка 188 з 1964

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Ціна
BSF030NE2LQ BSF030NE2LQ Infineon Technologies BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588 Description: MOSFET N-CH 25V 24A WDSON-2
на замовлення 18003 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSF077N06NT3GXUMA1 BSF077N06NT3GXUMA1 Infineon Technologies BSF077N06NT3_G.pdf Description: MOSFET N-CH 60V 13A WDSON-2
товару немає в наявності
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BSO080P03NS3EGXUMA1 BSO080P03NS3EGXUMA1 Infineon Technologies BSO080P03NS3EG.pdf Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03SHXUMA1 BSO080P03SHXUMA1 Infineon Technologies BSO080P03S_Rev1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b3af1f250a4b Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 2107 шт:
термін постачання 21-31 дні (днів)
2+184.33 грн
10+113.83 грн
100+77.80 грн
500+58.53 грн
1000+53.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSO130P03SHXUMA1 BSO130P03SHXUMA1 Infineon Technologies BSO130P03S+H_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd8012872a532b15410 Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 6668 шт:
термін постачання 21-31 дні (днів)
4+101.97 грн
10+61.86 грн
100+41.05 грн
500+30.12 грн
1000+27.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSO201SPHXUMA1 BSO201SPHXUMA1 Infineon Technologies BSO201SP_H_1.32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304325afd6e001261dc80c426058 Description: MOSFET P-CH 20V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 9652 шт:
термін постачання 21-31 дні (днів)
3+146.68 грн
10+90.64 грн
100+61.58 грн
500+46.11 грн
1000+44.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSO203PHXUMA1 BSO203PHXUMA1 Infineon Technologies BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11 Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO203SPHXUMA1 BSO203SPHXUMA1 Infineon Technologies BSO203SP_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b483bb050b22 Description: MOSFET P-CH 20V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO301SP H BSO301SP H Infineon Technologies BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac Description: MOSFET P-CH 30V 12.6A 8DSO
на замовлення 5810 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSO613SPVGHUMA1 BSO613SPVGHUMA1 Infineon Technologies BSO613SPVG.pdf Description: MOSFET P-CH 60V 3.44A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSP320SL6433HTMA1 BSP320SL6433HTMA1 Infineon Technologies BSP320S.pdf Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSZ018NE2LS BSZ018NE2LS Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A TSDSON-8
на замовлення 22633 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 Infineon Technologies BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2 Description: MOSFET N-CH 25V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
на замовлення 24323 шт:
термін постачання 21-31 дні (днів)
3+152.17 грн
10+94.27 грн
100+64.17 грн
500+48.11 грн
1000+44.22 грн
2000+40.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 2238 шт:
термін постачання 21-31 дні (днів)
3+129.42 грн
10+79.61 грн
100+53.71 грн
500+39.99 грн
1000+37.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ036NE2LSATMA1 BSZ036NE2LSATMA1 Infineon Technologies BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869 Description: MOSFET N-CH 25V 16A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
на замовлення 14557 шт:
термін постачання 21-31 дні (днів)
4+87.07 грн
10+45.47 грн
100+32.82 грн
500+27.69 грн
1000+24.60 грн
2000+23.13 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 Infineon Technologies BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
на замовлення 21940 шт:
термін постачання 21-31 дні (днів)
6+61.97 грн
10+36.94 грн
100+24.01 грн
500+17.31 грн
1000+15.63 грн
2000+14.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ065N03LSATMA1 BSZ065N03LSATMA1 Infineon Technologies BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 14092 шт:
термін постачання 21-31 дні (днів)
4+78.44 грн
10+47.13 грн
100+30.83 грн
500+22.36 грн
1000+20.24 грн
2000+18.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ086P03NS3GATMA1 BSZ086P03NS3GATMA1 Infineon Technologies BSZ086P03NS3+G_2.0.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a30431ff9881501203d3a5e7d17a9 Description: MOSFET P-CH 30V 13.5A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 3694 шт:
термін постачання 21-31 дні (днів)
4+90.20 грн
10+54.84 грн
100+36.08 грн
500+26.31 грн
1000+22.92 грн
2000+21.83 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ086P03NS3EGATMA1 BSZ086P03NS3EGATMA1 Infineon Technologies BSZ086P03NS3E+G_2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431ff9881501203d5e6a1717c9 Description: MOSFET P-CH 30V 13.5A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 13863 шт:
термін постачання 21-31 дні (днів)
4+90.99 грн
10+55.22 грн
100+36.38 грн
500+26.58 грн
1000+24.14 грн
2000+22.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ0909NSATMA1 BSZ0909NSATMA1 Infineon Technologies BSZ0909NS_rev3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128827726205408 Description: MOSFET N-CH 34V 9A/36A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 41067 шт:
термін постачання 21-31 дні (днів)
6+59.61 грн
10+35.43 грн
100+22.95 грн
500+16.50 грн
1000+14.87 грн
2000+13.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ240N12NS3GATMA1 BSZ240N12NS3GATMA1 Infineon Technologies BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038 Description: MOSFET N-CH 120V 37A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ42DN25NS3GATMA1 BSZ42DN25NS3GATMA1 Infineon Technologies BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 10958 шт:
термін постачання 21-31 дні (днів)
4+83.15 грн
10+53.33 грн
100+41.90 грн
500+36.88 грн
1000+33.73 грн
2000+33.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUZ31 H3045A BUZ31 H3045A Infineon Technologies BUZ31%20H3045A.pdf Description: MOSFET N-CH 200V 14.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
на замовлення 879 шт:
термін постачання 21-31 дні (днів)
4+78.44 грн
10+62.92 грн
100+56.00 грн
500+49.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPB019N06L3GATMA1 IPB019N06L3GATMA1 Infineon Technologies IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
на замовлення 7156 шт:
термін постачання 21-31 дні (днів)
1+343.56 грн
10+219.27 грн
100+155.68 грн
500+120.63 грн
В кошику  од. на суму  грн.
IPB020N04NGATMA1 IPB020N04NGATMA1 Infineon Technologies IPB020N04N_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431936bc4b0119382c70a859ed Description: MOSFET N-CH 40V 140A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO263-7-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 Infineon Technologies IPB020NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121e31c838554d3 Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 7434 шт:
термін постачання 21-31 дні (днів)
1+462.01 грн
10+298.96 грн
100+216.28 грн
500+171.22 грн
В кошику  од. на суму  грн.
IPB023N04NGATMA1 IPB023N04NGATMA1 Infineon Technologies Infineon-IPB023N04N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e01239f000f097121 Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB029N06N3GATMA1 IPB029N06N3GATMA1 Infineon Technologies IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8 Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 24609 шт:
термін постачання 21-31 дні (днів)
2+168.64 грн
10+113.83 грн
100+79.93 грн
500+66.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB030N08N3GATMA1 IPB030N08N3GATMA1 Infineon Technologies IPB030N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae88a47a856b1 Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
1+320.03 грн
10+203.34 грн
100+144.09 грн
500+111.48 грн
В кошику  од. на суму  грн.
IPB034N06L3GATMA1 IPB034N06L3GATMA1 Infineon Technologies IPP037N06L3_Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4561341f7d38 Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 IPB035N08N3GATMA1 Infineon Technologies IPP037N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae8426111565b Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
1+355.33 грн
10+227.58 грн
100+162.66 грн
В кошику  од. на суму  грн.
IPB037N06N3 G IPB037N06N3 G Infineon Technologies IPB037N06N3+G+_Rev1.01.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c2d4f447647 Description: MOSFET N-CH 60V 90A TO263-3
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB039N04LGATMA1 IPB039N04LGATMA1 Infineon Technologies IP%28B%2CP%29039N04L_G.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB041N04NGATMA1 IPB041N04NGATMA1 Infineon Technologies IPB%2CIPP041N04N_G.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB049N06L3GATMA1 IPB049N06L3GATMA1 Infineon Technologies IPx049,52N06L3_G.pdf Description: MOSFET N-CH 60V 80A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB049NE7N3GATMA1 IPB049NE7N3GATMA1 Infineon Technologies IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
2+215.71 грн
10+142.83 грн
100+103.56 грн
500+80.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N06N3GATMA1 IPB054N06N3GATMA1 Infineon Technologies IPP_B057N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b439f1d4d93 Description: MOSFET N-CH 60V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
2+171.00 грн
10+106.20 грн
100+72.82 грн
500+54.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N08N3GATMA1 IPB054N08N3GATMA1 Infineon Technologies IPP057N08N3_Rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117cf0cf5951d06 Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
2+178.06 грн
10+110.96 грн
100+76.26 грн
500+57.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Infineon Technologies IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)
1+489.46 грн
10+317.02 грн
100+229.80 грн
500+197.78 грн
В кошику  од. на суму  грн.
IPB067N08N3GATMA1 IPB067N08N3GATMA1 Infineon Technologies %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
на замовлення 5287 шт:
термін постачання 21-31 дні (днів)
2+210.22 грн
10+139.51 грн
100+101.24 грн
500+79.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB075N04LGATMA1 IPB075N04LGATMA1 Infineon Technologies IPB075N04L_G.pdf Description: MOSFET N-CH 40V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB081N06L3GATMA1 IPB081N06L3GATMA1 Infineon Technologies IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2 Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
3+133.35 грн
10+82.18 грн
100+55.52 грн
500+41.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB083N10N3GATMA1 IPB083N10N3GATMA1 Infineon Technologies IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
2+167.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB090N06N3GATMA1 IPB090N06N3GATMA1 Infineon Technologies IPP_B093N06N3_Rev1.0.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c3043a67656 Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB097N08N3 G IPB097N08N3 G Infineon Technologies IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619 Description: MOSFET N-CH 80V 70A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB107N20NAATMA1 IPB107N20NAATMA1 Infineon Technologies IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3 Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
1+649.47 грн
10+430.39 грн
100+319.99 грн
В кошику  од. на суму  грн.
IPB108N15N3GATMA1 IPB108N15N3GATMA1 Infineon Technologies Infineon-IPP_I111N15N3_IPB108N15N3-DS-v02_02-EN.pdf?fileId=db3a304325305e6d01254a5795541b4f Description: MOSFET N-CH 150V 83A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
на замовлення 4534 шт:
термін постачання 21-31 дні (днів)
2+277.67 грн
10+175.77 грн
100+123.70 грн
500+104.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB144N12N3GATMA1 IPB144N12N3GATMA1 Infineon Technologies IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01 Description: MOSFET N-CH 120V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
2+203.16 грн
10+126.90 грн
100+87.82 грн
500+66.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB530N15N3GATMA1 IPB530N15N3GATMA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R099C6ATMA1 IPB60R099C6ATMA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
1+505.15 грн
10+328.12 грн
100+238.64 грн
В кошику  од. на суму  грн.
IPB60R125C6ATMA1 IPB60R125C6ATMA1 Infineon Technologies IPB60R125C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc2012400cb0d9d5d2d Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
1+362.39 грн
10+232.57 грн
100+166.40 грн
500+150.34 грн
В кошику  од. на суму  грн.
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Infineon Technologies IPB60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123ffdae47e5c35 Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
2+287.09 грн
10+182.04 грн
100+128.38 грн
500+109.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R165CPATMA1 IPB60R165CPATMA1 Infineon Technologies IPB60R165CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd38f48fc Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 5090 шт:
термін постачання 21-31 дні (днів)
2+311.40 грн
10+198.13 грн
100+140.60 грн
500+123.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R299CPATMA1 IPB60R299CPATMA1 Infineon Technologies IPB60R299CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d30161ca0c0b Description: MOSFET N-CH 600V 11A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R385CP IPB60R385CP Infineon Technologies IPB60R385CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e836749df Description: MOSFET N-CH 600V 9A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R520CPATMA1 IPB60R520CPATMA1 Infineon Technologies IPB60R520CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792e20dc045d Description: MOSFET N-CH 600V 6.8A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R600C6ATMA1 IPB60R600C6ATMA1 Infineon Technologies IPx60R600C6.pdf Description: MOSFET N-CH 600V 7.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R950C6 IPB60R950C6 Infineon Technologies IPB60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a8282c217d66 Description: MOSFET N-CH 600V 4.4A TO263
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB65R110CFDATMA1 IPB65R110CFDATMA1 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
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BSF030NE2LQ BSF030NE2LQ_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a8f0792588
BSF030NE2LQ
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A WDSON-2
на замовлення 18003 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSF077N06NT3GXUMA1 BSF077N06NT3_G.pdf
BSF077N06NT3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13A WDSON-2
товару немає в наявності
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BSO080P03NS3EGXUMA1 BSO080P03NS3EG.pdf
BSO080P03NS3EGXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03SHXUMA1 BSO080P03S_Rev1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b3af1f250a4b
BSO080P03SHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 2107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.33 грн
10+113.83 грн
100+77.80 грн
500+58.53 грн
1000+53.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSO130P03SHXUMA1 BSO130P03S+H_Rev1.3.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd8012872a532b15410
BSO130P03SHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO150N03MDGXUMA1 BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c
BSO150N03MDGXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 6668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.97 грн
10+61.86 грн
100+41.05 грн
500+30.12 грн
1000+27.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSO201SPHXUMA1 BSO201SP_H_1.32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304325afd6e001261dc80c426058
BSO201SPHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 9652 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.68 грн
10+90.64 грн
100+61.58 грн
500+46.11 грн
1000+44.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSO203PHXUMA1 BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11
BSO203PHXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO203SPHXUMA1 BSO203SP_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b483bb050b22
BSO203SPHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO301SP H BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac
BSO301SP H
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
на замовлення 5810 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSO613SPVGHUMA1 BSO613SPVG.pdf
BSO613SPVGHUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 3.44A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSP320SL6433HTMA1 BSP320S.pdf
BSP320SL6433HTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSZ018NE2LS BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LS
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 23A TSDSON-8
на замовлення 22633 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSZ018NE2LSIATMA1 BSZ018NE2LSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093cc4a9471d2
BSZ018NE2LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
на замовлення 24323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.17 грн
10+94.27 грн
100+64.17 грн
500+48.11 грн
1000+44.22 грн
2000+40.94 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ019N03LSATMA1 BSZ019N03LS_Rev+2.1.pdf?folderId=db3a304326dfb1300126fb3bec803f1a&fileId=db3a304326dfb1300126fb7ddf173f4e
BSZ019N03LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A . 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta). 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
на замовлення 2238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.42 грн
10+79.61 грн
100+53.71 грн
500+39.99 грн
1000+37.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSZ036NE2LSATMA1 BSZ036NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed92706043869
BSZ036NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 16A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 12 V
на замовлення 14557 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.07 грн
10+45.47 грн
100+32.82 грн
500+27.69 грн
1000+24.60 грн
2000+23.13 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ060NE2LSATMA1 BSZ060NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ec927cb360e1f
BSZ060NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 12A/44A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 12 V
на замовлення 21940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.97 грн
10+36.94 грн
100+24.01 грн
500+17.31 грн
1000+15.63 грн
2000+14.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ065N03LSATMA1 BSZ065N03LS_Rev2.1_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ea425a4012ed7fbc0b23834
BSZ065N03LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 14092 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.44 грн
10+47.13 грн
100+30.83 грн
500+22.36 грн
1000+20.24 грн
2000+18.45 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ086P03NS3GATMA1 BSZ086P03NS3+G_2.0.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a30431ff9881501203d3a5e7d17a9
BSZ086P03NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 13.5A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 3694 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.20 грн
10+54.84 грн
100+36.08 грн
500+26.31 грн
1000+22.92 грн
2000+21.83 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ086P03NS3EGATMA1 BSZ086P03NS3E+G_2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431ff9881501203d5e6a1717c9
BSZ086P03NS3EGATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 13.5A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 13863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.99 грн
10+55.22 грн
100+36.38 грн
500+26.58 грн
1000+24.14 грн
2000+22.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSZ0909NSATMA1 BSZ0909NS_rev3.2.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a3043284aacd80128827726205408
BSZ0909NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 9A/36A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 41067 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.61 грн
10+35.43 грн
100+22.95 грн
500+16.50 грн
1000+14.87 грн
2000+13.50 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSZ240N12NS3GATMA1 BSZ240N12NS3+Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432a40a650012a42f3057a0038
BSZ240N12NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 37A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ42DN25NS3GATMA1 BSZ42DN25NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15e5a93b1a8b
BSZ42DN25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 5A TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 425mOhm @ 2.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TSDSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 10958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.15 грн
10+53.33 грн
100+41.90 грн
500+36.88 грн
1000+33.73 грн
2000+33.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUZ31 H3045A BUZ31%20H3045A.pdf
BUZ31 H3045A
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 14.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
на замовлення 879 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.44 грн
10+62.92 грн
100+56.00 грн
500+49.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPB019N06L3GATMA1 IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b
IPB019N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 196µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
на замовлення 7156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+343.56 грн
10+219.27 грн
100+155.68 грн
500+120.63 грн
В кошику  од. на суму  грн.
IPB020N04NGATMA1 IPB020N04N_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431936bc4b0119382c70a859ed
IPB020N04NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 140A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO263-7-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB020NE7N3GATMA1 IPB020NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121e31c838554d3
IPB020NE7N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 7434 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.01 грн
10+298.96 грн
100+216.28 грн
500+171.22 грн
В кошику  од. на суму  грн.
IPB023N04NGATMA1 Infineon-IPB023N04N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e01239f000f097121
IPB023N04NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB029N06N3GATMA1 IPP032N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a84ff084cc8
IPB029N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 24609 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.64 грн
10+113.83 грн
100+79.93 грн
500+66.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB030N08N3GATMA1 IPB030N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae88a47a856b1
IPB030N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+320.03 грн
10+203.34 грн
100+144.09 грн
500+111.48 грн
В кошику  од. на суму  грн.
IPB034N06L3GATMA1 IPP037N06L3_Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4561341f7d38
IPB034N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 IPP037N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae8426111565b
IPB035N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+355.33 грн
10+227.58 грн
100+162.66 грн
В кошику  од. на суму  грн.
IPB037N06N3 G IPB037N06N3+G+_Rev1.01.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c2d4f447647
IPB037N06N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB039N04LGATMA1 IP%28B%2CP%29039N04L_G.pdf
IPB039N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB041N04NGATMA1 IPB%2CIPP041N04N_G.pdf
IPB041N04NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB049N06L3GATMA1 IPx049,52N06L3_G.pdf
IPB049N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB049NE7N3GATMA1 IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9
IPB049NE7N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.71 грн
10+142.83 грн
100+103.56 грн
500+80.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N06N3GATMA1 IPP_B057N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b439f1d4d93
IPB054N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+171.00 грн
10+106.20 грн
100+72.82 грн
500+54.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N08N3GATMA1 IPP057N08N3_Rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117cf0cf5951d06
IPB054N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.06 грн
10+110.96 грн
100+76.26 грн
500+57.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB065N15N3GATMA1 IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c
IPB065N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+489.46 грн
10+317.02 грн
100+229.80 грн
500+197.78 грн
В кошику  од. на суму  грн.
IPB067N08N3GATMA1 %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf
IPB067N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
на замовлення 5287 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.22 грн
10+139.51 грн
100+101.24 грн
500+79.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB075N04LGATMA1 IPB075N04L_G.pdf
IPB075N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB081N06L3GATMA1 IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2
IPB081N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.35 грн
10+82.18 грн
100+55.52 грн
500+41.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB083N10N3GATMA1 IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPB083N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB090N06N3GATMA1 IPP_B093N06N3_Rev1.0.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c3043a67656
IPB090N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB097N08N3 G IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619
IPB097N08N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB107N20NAATMA1 IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3
IPB107N20NAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+649.47 грн
10+430.39 грн
100+319.99 грн
В кошику  од. на суму  грн.
IPB108N15N3GATMA1 Infineon-IPP_I111N15N3_IPB108N15N3-DS-v02_02-EN.pdf?fileId=db3a304325305e6d01254a5795541b4f
IPB108N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 83A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
на замовлення 4534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+277.67 грн
10+175.77 грн
100+123.70 грн
500+104.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB144N12N3GATMA1 IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01
IPB144N12N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.16 грн
10+126.90 грн
100+87.82 грн
500+66.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB530N15N3GATMA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPB530N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R099C6ATMA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPB60R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+505.15 грн
10+328.12 грн
100+238.64 грн
В кошику  од. на суму  грн.
IPB60R125C6ATMA1 IPB60R125C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc2012400cb0d9d5d2d
IPB60R125C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+362.39 грн
10+232.57 грн
100+166.40 грн
500+150.34 грн
В кошику  од. на суму  грн.
IPB60R160C6ATMA1 IPB60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123ffdae47e5c35
IPB60R160C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+287.09 грн
10+182.04 грн
100+128.38 грн
500+109.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R165CPATMA1 IPB60R165CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd38f48fc
IPB60R165CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 5090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+311.40 грн
10+198.13 грн
100+140.60 грн
500+123.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R299CPATMA1 IPB60R299CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d30161ca0c0b
IPB60R299CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R385CP IPB60R385CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e836749df
IPB60R385CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R520CPATMA1 IPB60R520CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792e20dc045d
IPB60R520CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R600C6ATMA1 IPx60R600C6.pdf
IPB60R600C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R950C6 IPB60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a8282c217d66
IPB60R950C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO263
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB65R110CFDATMA1 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPB65R110CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
В кошику  од. на суму  грн.
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