Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117841) > Сторінка 193 з 1965

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AUIRLU3110Z AUIRLU3110Z Infineon Technologies AUIRL%28R%2CU%293110Z.pdf Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
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AUIRLZ44ZS AUIRLZ44ZS Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 55V 51A SMD DPAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
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AUIRS20161S AUIRS20161S Infineon Technologies AUIRS20161S.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.4V ~ 6.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 200ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AUIRS2092S AUIRS2092S Infineon Technologies auirs2092s.pdf?fileId=5546d462533600a4015355bf314b15a3 Description: IC AMP CLASS D MONO 16SOIC
Features: Depop
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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AUIRS2332J AUIRS2332J Infineon Technologies AUIRS2332J.pdf Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AUIRS2334S AUIRS2334S Infineon Technologies AUIRS2334S.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AUIRS44261S AUIRS44261S Infineon Technologies AUIRS44261S.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.8V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IR11452SPBF Infineon Technologies Description: IC PFC ONE CYCLE CONTROL 8SOIC
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IRF1902GPBF IRF1902GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 20V 4.2A 8SO
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IRF3710ZGPBF IRF3710ZGPBF Infineon Technologies IRF3710ZGPBF.pdf Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRF4104GPBF IRF4104GPBF Infineon Technologies IRF4104GPBF.pdf Description: MOSFET N CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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IRFS3207ZTRRPBF IRFS3207ZTRRPBF Infineon Technologies irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161 Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
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IRF7946TRPBF IRF7946TRPBF Infineon Technologies irf7946pbf.pdf?fileId=5546d462533600a40153560cc0a41d43 Description: MOSFET N-CH 40V 90A DIRECTFET MX
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
на замовлення 57600 шт:
термін постачання 21-31 дні (днів)
4800+63.62 грн
Мінімальне замовлення: 4800
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IRFH7004TRPBF IRFH7004TRPBF Infineon Technologies irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2 Description: MOSFET N-CH 40V 100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
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IRFH7110TRPBF IRFH7110TRPBF Infineon Technologies IRFH7110PbF.pdf Description: MOSFET N-CH 100V 11A/58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
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IPA50R950CE IPA50R950CE Infineon Technologies INFN-S-A0002220388-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 4.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 25.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPA50R280CE IPA50R280CE Infineon Technologies DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751 Description: MOSFET N-CH 500V 13A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 30.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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IPA50R500CE IPA50R500CE Infineon Technologies INFN-S-A0002220388-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 7.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
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IPP50R500CEXKSA1 IPP50R500CEXKSA1 Infineon Technologies Infineon-IPP50R500CE-DS-v02_03-EN.pdf?fileId=5546d4624cb7f111014d429958596d9f Description: MOSFET N-CH 500V 7.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
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XMC4500E144F1024ABXQSA1 XMC4500E144F1024ABXQSA1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 1MB FLASH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, SPI, UART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LFBGA-144-10
Number of I/O: 91
DigiKey Programmable: Not Verified
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XMC4500F100K1024ABXQSA1 XMC4500F100K1024ABXQSA1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 1MB FLASH 100LQFP
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XMC4500F100F1024ABXQMA1 XMC4500F100F1024ABXQMA1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-11
Number of I/O: 55
DigiKey Programmable: Not Verified
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XMC4500F144F1024ABXQMA1 XMC4500F144F1024ABXQMA1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
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XMC4500-F144K1024 AB XMC4500-F144K1024 AB Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
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IPD50P04P4L11ATMA1 IPD50P04P4L11ATMA1 Infineon Technologies Infineon-IPD50P04P4L_11-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304329a0f6ee0129db9d1df05c58&ack=t Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BTS121AE3045ANTMA1 BTS121AE3045ANTMA1 Infineon Technologies BTS121A.pdf Description: MOSFET N CH 100V 22A TO-220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BTS7710GNUMA1 BTS7710GNUMA1 Infineon Technologies BTS%207710%20G.pdf Description: IC HALF BRIDGE DRIVER PDSO28
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28-14
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
2500+19.22 грн
5000+17.08 грн
7500+15.47 грн
17500+14.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2ED020I12FIXUMA1 2ED020I12FIXUMA1 Infineon Technologies Datasheet_2ED020I12_FI_V1+0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40959d401de Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+152.65 грн
2000+143.56 грн
3000+141.84 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SLB9635TT12FW316XUMA1 SLB9635TT12FW316XUMA1 Infineon Technologies SLB%209635%20TT1.2.pdf Description: IC SECURITY TPM I2C 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-TSSOP-28
Part Status: Not For New Designs
Number of I/O: 2
DigiKey Programmable: Not Verified
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SLB 9635 TT1.2 FW3.17 SLB 9635 TT1.2 FW3.17 Infineon Technologies Description: IC SPECIALIZED
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMBTA 06 LT1 MMBTA 06 LT1 Infineon Technologies smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d Description: TRANS NPN 80V 500MA SOT23
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE7259GNT TLE7259GNT Infineon Technologies fundamentals-of-power-semiconductors Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 300 mV
Duplex: Full
товару немає в наявності
В кошику  од. на суму  грн.
SP370-23-106-0 SP370-23-106-0 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PEPS/TPMS 315/434MZ DSOSP14-6
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.236", 6.05mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Type: Passive Entry/Start, TPMS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Supplier Device Package: P-DSOSP-14-6
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+452.66 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SLE5542M32XHSA2 Infineon Technologies SLE_5542.pdf Description: IC MEMORY
товару немає в наявності
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TCA505BGGEGXUMA1 TCA505BGGEGXUMA1 Infineon Technologies TCA505BG.pdf Description: IC SWITCH PROXIMITY INDCT 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16-1
Part Status: Obsolete
Current - Supply: 550 µA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BTS121AE3045ANTMA1 BTS121AE3045ANTMA1 Infineon Technologies BTS121A.pdf Description: MOSFET N CH 100V 22A TO-220AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товару немає в наявності
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SLB 9635 TT1.2 FW3.17 SLB 9635 TT1.2 FW3.17 Infineon Technologies Description: IC SPECIALIZED
на замовлення 11457 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLB 9635 TT1.2 FW3.17 SLB 9635 TT1.2 FW3.17 Infineon Technologies Description: IC SPECIALIZED
на замовлення 11457 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMBTA 06 LT1 MMBTA 06 LT1 Infineon Technologies smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d Description: TRANS NPN 80V 500MA SOT23
на замовлення 33112 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMBTA 06 LT1 MMBTA 06 LT1 Infineon Technologies smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d Description: TRANS NPN 80V 500MA SOT23
на замовлення 33112 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE7259GNT TLE7259GNT Infineon Technologies fundamentals-of-power-semiconductors Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 300 mV
Duplex: Full
товару немає в наявності
В кошику  од. на суму  грн.
SP370-23-106-0 SP370-23-106-0 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PEPS/TPMS 315/434MZ DSOSP14-6
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.236", 6.05mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Type: Passive Entry/Start, TPMS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Supplier Device Package: P-DSOSP-14-6
на замовлення 1718 шт:
термін постачання 21-31 дні (днів)
1+748.31 грн
10+562.58 грн
25+523.00 грн
100+449.95 грн
250+430.47 грн
500+418.73 грн
В кошику  од. на суму  грн.
SLE5542M32XHSA2 Infineon Technologies SLE_5542.pdf Description: IC MEMORY
на замовлення 18390 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLE5542M32XHSA2 Infineon Technologies SLE_5542.pdf Description: IC MEMORY
на замовлення 18390 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 28599 шт:
термін постачання 21-31 дні (днів)
8+40.00 грн
10+30.74 грн
100+23.14 грн
500+19.45 грн
1000+18.12 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
2ED020I12FIXUMA1 2ED020I12FIXUMA1 Infineon Technologies Datasheet_2ED020I12_FI_V1+0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40959d401de Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3475 шт:
термін постачання 21-31 дні (днів)
2+272.97 грн
10+198.43 грн
25+182.31 грн
100+154.52 грн
250+146.63 грн
500+145.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD50P04P4L11ATMA1 IPD50P04P4L11ATMA1 Infineon Technologies Infineon-IPD50P04P4L_11-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304329a0f6ee0129db9d1df05c58&ack=t Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IR3894MTR1PBF IR3894MTR1PBF Infineon Technologies ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f Description: IC REG BUCK ADJ 12A 16PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 16-PowerQFN
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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IR3895MTR1PBF IR3895MTR1PBF Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: IC REG BUCK ADJ 16A 16PQFN
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IR3897MTR1PBF IR3897MTR1PBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
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IRDC3894 IRDC3894 Infineon Technologies irdc3894.pdf_fileid=5546d462533600a40153569f79de2c61.pdf Description: BOARD EVAL SUPIRBUCK IR3894
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 12A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3894
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1810.37 грн
В кошику  од. на суму  грн.
IRDC3895 IRDC3895 Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: BOARD EVAL SUPIRBUCK IR3895
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 16A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3895
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
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IR3895MTR1PBF IR3895MTR1PBF Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: IC REG BUCK ADJ 16A 16PQFN
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IR3897MTR1PBF IR3897MTR1PBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
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IRF7342D2TRPBF IRF7342D2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 55V 3.4A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товару немає в наявності
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IRLR3110ZTRPBF IRLR3110ZTRPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 21684 шт:
термін постачання 21-31 дні (днів)
3+149.03 грн
10+91.92 грн
100+62.20 грн
500+46.43 грн
1000+42.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRLR3705ZTRPBF IRLR3705ZTRPBF Infineon Technologies irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 20400 шт:
термін постачання 21-31 дні (днів)
3+134.92 грн
10+82.94 грн
100+55.80 грн
500+41.47 грн
1000+37.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR25600SPBF IR25600SPBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
товару немає в наявності
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IR25601STRPBF IR25601STRPBF Infineon Technologies Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
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AUIRLU3110Z AUIRL%28R%2CU%293110Z.pdf
AUIRLU3110Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
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AUIRLZ44ZS Part_Number_Guide_Web.pdf
AUIRLZ44ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A SMD DPAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
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AUIRS20161S AUIRS20161S.pdf
AUIRS20161S
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.4V ~ 6.5V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 200ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AUIRS2092S auirs2092s.pdf?fileId=5546d462533600a4015355bf314b15a3
AUIRS2092S
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Features: Depop
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
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AUIRS2332J AUIRS2332J.pdf
AUIRS2332J
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AUIRS2334S AUIRS2334S.pdf
AUIRS2334S
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AUIRS44261S AUIRS44261S.pdf
AUIRS44261S
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.8V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 25ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Grade: Automotive
Part Status: Obsolete
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IR11452SPBF
Виробник: Infineon Technologies
Description: IC PFC ONE CYCLE CONTROL 8SOIC
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IRF1902GPBF IR_PartNumberingSystem.pdf
IRF1902GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 4.2A 8SO
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IRF3710ZGPBF IRF3710ZGPBF.pdf
IRF3710ZGPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRF4104GPBF IRF4104GPBF.pdf
IRF4104GPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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IRFS3207ZTRRPBF irfs3207zpbf.pdf?fileId=5546d462533600a40153563679b62161
IRFS3207ZTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
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IRF7946TRPBF irf7946pbf.pdf?fileId=5546d462533600a40153560cc0a41d43
IRF7946TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A DIRECTFET MX
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
на замовлення 57600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4800+63.62 грн
Мінімальне замовлення: 4800
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IRFH7004TRPBF irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2
IRFH7004TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
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IRFH7110TRPBF IRFH7110PbF.pdf
IRFH7110TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
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IPA50R950CE INFN-S-A0002220388-1.pdf?t.download=true&u=5oefqw
IPA50R950CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 25.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPA50R280CE DS_IPA50R280CE_2_2.pdf?fileId=5546d4614815da880148594e0dbc1751
IPA50R280CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 30.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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IPA50R500CE INFN-S-A0002220388-1.pdf?t.download=true&u=5oefqw
IPA50R500CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
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IPP50R500CEXKSA1 Infineon-IPP50R500CE-DS-v02_03-EN.pdf?fileId=5546d4624cb7f111014d429958596d9f
IPP50R500CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
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XMC4500E144F1024ABXQSA1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4500E144F1024ABXQSA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, SPI, UART, USB
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LFBGA-144-10
Number of I/O: 91
DigiKey Programmable: Not Verified
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XMC4500F100K1024ABXQSA1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4500F100K1024ABXQSA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100LQFP
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XMC4500F100F1024ABXQMA1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4500F100F1024ABXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-11
Number of I/O: 55
DigiKey Programmable: Not Verified
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XMC4500F144F1024ABXQMA1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4500F144F1024ABXQMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
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XMC4500-F144K1024 AB Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4500-F144K1024 AB
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-18
Number of I/O: 91
DigiKey Programmable: Not Verified
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IPD50P04P4L11ATMA1 Infineon-IPD50P04P4L_11-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304329a0f6ee0129db9d1df05c58&ack=t
IPD50P04P4L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BTS121AE3045ANTMA1 BTS121A.pdf
BTS121AE3045ANTMA1
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 22A TO-220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товару немає в наявності
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BTS7710GNUMA1 BTS%207710%20G.pdf
BTS7710GNUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER PDSO28
Packaging: Tape & Reel (TR)
Features: Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28-14
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
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IPD135N03LGATMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD135N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+19.22 грн
5000+17.08 грн
7500+15.47 грн
17500+14.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2ED020I12FIXUMA1 Datasheet_2ED020I12_FI_V1+0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40959d401de
2ED020I12FIXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+152.65 грн
2000+143.56 грн
3000+141.84 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SLB9635TT12FW316XUMA1 SLB%209635%20TT1.2.pdf
SLB9635TT12FW316XUMA1
Виробник: Infineon Technologies
Description: IC SECURITY TPM I2C 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-TSSOP-28
Part Status: Not For New Designs
Number of I/O: 2
DigiKey Programmable: Not Verified
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SLB 9635 TT1.2 FW3.17
SLB 9635 TT1.2 FW3.17
Виробник: Infineon Technologies
Description: IC SPECIALIZED
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMBTA 06 LT1 smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d
MMBTA 06 LT1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 500MA SOT23
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE7259GNT fundamentals-of-power-semiconductors
TLE7259GNT
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 300 mV
Duplex: Full
товару немає в наявності
В кошику  од. на суму  грн.
SP370-23-106-0 fundamentals-of-power-semiconductors
SP370-23-106-0
Виробник: Infineon Technologies
Description: IC PEPS/TPMS 315/434MZ DSOSP14-6
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.236", 6.05mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Type: Passive Entry/Start, TPMS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Supplier Device Package: P-DSOSP-14-6
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+452.66 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SLE5542M32XHSA2 SLE_5542.pdf
Виробник: Infineon Technologies
Description: IC MEMORY
товару немає в наявності
В кошику  од. на суму  грн.
TCA505BGGEGXUMA1 TCA505BG.pdf
TCA505BGGEGXUMA1
Виробник: Infineon Technologies
Description: IC SWITCH PROXIMITY INDCT 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16-1
Part Status: Obsolete
Current - Supply: 550 µA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BTS121AE3045ANTMA1 BTS121A.pdf
BTS121AE3045ANTMA1
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 22A TO-220AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товару немає в наявності
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SLB 9635 TT1.2 FW3.17
SLB 9635 TT1.2 FW3.17
Виробник: Infineon Technologies
Description: IC SPECIALIZED
на замовлення 11457 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLB 9635 TT1.2 FW3.17
SLB 9635 TT1.2 FW3.17
Виробник: Infineon Technologies
Description: IC SPECIALIZED
на замовлення 11457 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMBTA 06 LT1 smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d
MMBTA 06 LT1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 500MA SOT23
на замовлення 33112 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMBTA 06 LT1 smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d
MMBTA 06 LT1
Виробник: Infineon Technologies
Description: TRANS NPN 80V 500MA SOT23
на замовлення 33112 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE7259GNT fundamentals-of-power-semiconductors
TLE7259GNT
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 300 mV
Duplex: Full
товару немає в наявності
В кошику  од. на суму  грн.
SP370-23-106-0 fundamentals-of-power-semiconductors
SP370-23-106-0
Виробник: Infineon Technologies
Description: IC PEPS/TPMS 315/434MZ DSOSP14-6
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.236", 6.05mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Type: Passive Entry/Start, TPMS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Supplier Device Package: P-DSOSP-14-6
на замовлення 1718 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+748.31 грн
10+562.58 грн
25+523.00 грн
100+449.95 грн
250+430.47 грн
500+418.73 грн
В кошику  од. на суму  грн.
SLE5542M32XHSA2 SLE_5542.pdf
Виробник: Infineon Technologies
Description: IC MEMORY
на замовлення 18390 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SLE5542M32XHSA2 SLE_5542.pdf
Виробник: Infineon Technologies
Description: IC MEMORY
на замовлення 18390 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD135N03LGATMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD135N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
на замовлення 28599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.00 грн
10+30.74 грн
100+23.14 грн
500+19.45 грн
1000+18.12 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
2ED020I12FIXUMA1 Datasheet_2ED020I12_FI_V1+0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40959d401de
2ED020I12FIXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.97 грн
10+198.43 грн
25+182.31 грн
100+154.52 грн
250+146.63 грн
500+145.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD50P04P4L11ATMA1 Infineon-IPD50P04P4L_11-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304329a0f6ee0129db9d1df05c58&ack=t
IPD50P04P4L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IR3894MTR1PBF ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f
IR3894MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 16-PowerQFN
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
товару немає в наявності
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IR3895MTR1PBF ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IR3895MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 16A 16PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IR3897MTR1PBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IRDC3894 irdc3894.pdf_fileid=5546d462533600a40153569f79de2c61.pdf
IRDC3894
Виробник: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3894
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 12A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3894
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1810.37 грн
В кошику  од. на суму  грн.
IRDC3895 ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IRDC3895
Виробник: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3895
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 16A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3895
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
товару немає в наявності
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IR3895MTR1PBF ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IR3895MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 16A 16PQFN
товару немає в наявності
В кошику  од. на суму  грн.
IR3897MTR1PBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
товару немає в наявності
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IRF7342D2TRPBF IR_PartNumberingSystem.pdf
IRF7342D2TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 3.4A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
товару немає в наявності
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IRLR3110ZTRPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLR3110ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 21684 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.03 грн
10+91.92 грн
100+62.20 грн
500+46.43 грн
1000+42.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRLR3705ZTRPBF irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d
IRLR3705ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 20400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.92 грн
10+82.94 грн
100+55.80 грн
500+41.47 грн
1000+37.96 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR25600SPBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR25601STRPBF Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8
IR25601STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
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