Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117853) > Сторінка 190 з 1965
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPL60R299CPAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 11.1A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SN7002N H6327 | Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23 |
на замовлення 5339 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSC0901NSI | Infineon Technologies |
Description: MOSFET N-CH 30V 28A 8TDSON |
на замовлення 7499 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSC0904NSI | Infineon Technologies |
Description: MOSFET N-CH 30V 20A 8TDSON |
на замовлення 324 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSC22DN20NS3 G | Infineon Technologies |
Description: MOSFET N-CH 200V 7A 8TDSON |
на замовлення 11863 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSC883N03MSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 34V 19A TDSON-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSF030NE2LQ | Infineon Technologies |
Description: MOSFET N-CH 25V 24A WDSON-2 |
на замовлення 18003 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSF077N06NT3GXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 13A WDSON-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSO301SP H | Infineon Technologies |
Description: MOSFET P-CH 30V 12.6A 8DSO |
на замовлення 5810 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSZ018NE2LS | Infineon Technologies |
Description: MOSFET N-CH 25V 23A TSDSON-8 |
на замовлення 22633 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IPB037N06N3 G | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO263-3 |
на замовлення 2504 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IPB049N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 80A TO263-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPB097N08N3 G | Infineon Technologies |
Description: MOSFET N-CH 80V 70A TO263-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPB60R385CP | Infineon Technologies |
Description: MOSFET N-CH 600V 9A TO-263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IPB60R950C6 | Infineon Technologies |
Description: MOSFET N-CH 600V 4.4A TO263 |
на замовлення 2373 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IPB65R660CFD | Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO263 |
на замовлення 21116 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IPD068P03L3 G | Infineon Technologies |
Description: MOSFET P-CH 30V 70A TO252-3 |
на замовлення 6607 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IPD60R520C6 | Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO252 |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IPD65R600C6 | Infineon Technologies |
Description: MOSFET N-CH 650V 7.3A TO252 |
на замовлення 7909 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSB165N15NZ3 G | Infineon Technologies |
Description: MOSFET N-CH 150V 9A WDSON-2 |
на замовлення 9105 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SN7002N H6327 | Infineon Technologies |
Description: MOSFET N-CH 60V 200MA SOT23 |
на замовлення 5339 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSC084P03NS3GATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 14.9A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 105µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V |
на замовлення 8172 шт: термін постачання 21-31 дні (днів) |
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IPB042N10N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V |
на замовлення 19318 шт: термін постачання 21-31 дні (днів) |
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IFX8117MEVHTMA1 | Infineon Technologies |
Description: IC REG LDO ADJ 1A SOT223-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX24401TE V50 | Infineon Technologies |
Description: IC REG LDO 5V 0.3A TO252-5 |
на замовлення 5521 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IFX8117MEVHTMA1 | Infineon Technologies |
Description: IC REG LDO ADJ 1A SOT223-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX8117MEV50HTMA1 | Infineon Technologies | Description: IC REG LINEAR 5V 1A SOT223-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX91041EJV33XUMA1 | Infineon Technologies |
Description: IC REG BUCK 3.3V 1.8A DSO-8-27Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 370kHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-DSO-8-27 Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX91041EJV50XUMA1 | Infineon Technologies |
Description: IC REG BUCK 5V 1.8A DSO-8-27Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 370kHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-DSO-8-27 Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX24401TE V50 | Infineon Technologies |
Description: IC REG LDO 5V 0.3A TO252-5 |
на замовлення 5521 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IFX91041EJVXUMA1 | Infineon Technologies |
Description: IC REG BUCK ADJ 1.8A DSO-8-27Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 370kHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-DSO-8-27 Synchronous Rectifier: No Voltage - Output (Max): 16V Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 0.6V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX1021SJ | Infineon Technologies |
Description: IC TXRX LIN BUS 8DSO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IFX21004TNV51AKSA1 | Infineon Technologies |
Description: IC REG LINEAR 5V/15V TO220-5Packaging: Tube Package / Case: TO-220-5 Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA, 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 40V Number of Regulators: 2 Supplier Device Package: PG-TO220-5 Voltage - Output (Min/Fixed): 5V, 15V Part Status: Obsolete PSRR: 55dB (100Hz), 50dB (100Hz) Voltage Dropout (Max): 10V @ 100mA, 6V @ 30mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 3.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFSL4510PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 61A TO262 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFR4510PBF | Infineon Technologies |
Description: MOSFET N CH 100V 56A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF7946TR1PBF | Infineon Technologies |
Description: MOSFET N CH 40V 90A DIRECTFET MXPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFB7434PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
на замовлення 882 шт: термін постачання 21-31 дні (днів) |
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IRFB7437PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V |
на замовлення 2241 шт: термін постачання 21-31 дні (днів) |
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IRFB7446PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V |
на замовлення 1837 шт: термін постачання 21-31 дні (днів) |
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IRFP7430PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 366W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
на замовлення 517 шт: термін постачання 21-31 дні (днів) |
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IRFB4510PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 62A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 37A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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IRFS4510PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 61A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFI4510GPBF | Infineon Technologies |
Description: MOSFET N CH 100V 35A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 21A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Full-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2998 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFR4510TRPBF | Infineon Technologies |
Description: MOSFET N CH 100V 56A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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IRFU4510PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 56A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: IPAK (TO-251AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V |
на замовлення 1310 шт: термін постачання 21-31 дні (днів) |
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IRFB7440PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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IRF7946TR1PBF | Infineon Technologies |
Description: MOSFET N CH 40V 90A DIRECTFET MXPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IRFH7004TR2PBF | Infineon Technologies |
Description: MOSFET N CH 40V 100A PQFN5X6Packaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IRFH7110TR2PBF | Infineon Technologies |
Description: MOSFET N CH 100V 11A PQFN5X6Packaging: Cut Tape (CT) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IRFR4510TRPBF | Infineon Technologies |
Description: MOSFET N CH 100V 56A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V |
на замовлення 19350 шт: термін постачання 21-31 дні (днів) |
|
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| PRG832801-8B | Infineon Technologies | Description: M2 GANG PROGRAMMER 4X40+4X56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PRG833701-4A | Infineon Technologies | Description: COMMANCHE2 GANG PROG IR3563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PRG833701-4B | Infineon Technologies |
Description: COMMANCHE2 GANG PROG IR3566Packaging: Box Type: Programmer Contents: Board(s) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SVID002 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED SVIDPackaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
CHL8550CRT | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 35 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 10ns, 8ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 1V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AUIPS1031RTRL | Infineon Technologies |
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: TO-252AA (DPAK) Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AUIPS1041LTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AUIPS1042GTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-906 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AUIPS1052GTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.1A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-906 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
AUIPS2031RTRL | Infineon Technologies |
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPL60R299CPAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 600V 11.1A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SN7002N H6327 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23
Description: MOSFET N-CH 60V 200MA SOT23
на замовлення 5339 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC0901NSI |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A 8TDSON
Description: MOSFET N-CH 30V 28A 8TDSON
на замовлення 7499 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC0904NSI |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8TDSON
Description: MOSFET N-CH 30V 20A 8TDSON
на замовлення 324 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC22DN20NS3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A 8TDSON
Description: MOSFET N-CH 200V 7A 8TDSON
на замовлення 11863 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC883N03MSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 19A TDSON-8
Description: MOSFET N-CH 34V 19A TDSON-8
товару немає в наявності
В кошику
од. на суму грн.
| BSF030NE2LQ |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 24A WDSON-2
Description: MOSFET N-CH 25V 24A WDSON-2
на замовлення 18003 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSF077N06NT3GXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13A WDSON-2
Description: MOSFET N-CH 60V 13A WDSON-2
товару немає в наявності
В кошику
од. на суму грн.
| BSO301SP H |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Description: MOSFET P-CH 30V 12.6A 8DSO
на замовлення 5810 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSZ018NE2LS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 23A TSDSON-8
Description: MOSFET N-CH 25V 23A TSDSON-8
на замовлення 22633 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPB037N06N3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
Description: MOSFET N-CH 60V 90A TO263-3
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPB049N06L3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
Description: MOSFET N-CH 60V 80A TO263-3
товару немає в наявності
В кошику
од. на суму грн.
| IPB097N08N3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO263-3
Description: MOSFET N-CH 80V 70A TO263-3
товару немає в наявності
В кошику
од. на суму грн.
| IPB60R385CP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO-263
Description: MOSFET N-CH 600V 9A TO-263
товару немає в наявності
В кошику
од. на суму грн.
| IPB60R950C6 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO263
Description: MOSFET N-CH 600V 4.4A TO263
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPB65R660CFD |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO263
Description: MOSFET N-CH 650V 6A TO263
на замовлення 21116 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPD068P03L3 G |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Description: MOSFET P-CH 30V 70A TO252-3
на замовлення 6607 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPD60R520C6 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252
Description: MOSFET N-CH 600V 8.1A TO252
на замовлення 51 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPD65R600C6 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252
Description: MOSFET N-CH 650V 7.3A TO252
на замовлення 7909 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSB165N15NZ3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 9A WDSON-2
Description: MOSFET N-CH 150V 9A WDSON-2
на замовлення 9105 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SN7002N H6327 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23
Description: MOSFET N-CH 60V 200MA SOT23
на замовлення 5339 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC084P03NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 8172 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.38 грн |
| 10+ | 67.75 грн |
| 100+ | 45.11 грн |
| 500+ | 33.20 грн |
| 1000+ | 30.26 грн |
| 2000+ | 27.79 грн |
| IPB042N10N3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
на замовлення 19318 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.23 грн |
| 10+ | 124.03 грн |
| 100+ | 85.19 грн |
| 500+ | 64.36 грн |
| IFX8117MEVHTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LDO ADJ 1A SOT223-4
Description: IC REG LDO ADJ 1A SOT223-4
товару немає в наявності
В кошику
од. на суму грн.
| IFX24401TE V50 |
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Виробник: Infineon Technologies
Description: IC REG LDO 5V 0.3A TO252-5
Description: IC REG LDO 5V 0.3A TO252-5
на замовлення 5521 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IFX8117MEVHTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LDO ADJ 1A SOT223-4
Description: IC REG LDO ADJ 1A SOT223-4
товару немає в наявності
В кошику
од. на суму грн.
| IFX8117MEV50HTMA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 1A SOT223-4
Description: IC REG LINEAR 5V 1A SOT223-4
товару немає в наявності
В кошику
од. на суму грн.
| IFX91041EJV33XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 1.8A DSO-8-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8-27
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
Description: IC REG BUCK 3.3V 1.8A DSO-8-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8-27
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IFX91041EJV50XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 1.8A DSO-8-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8-27
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Description: IC REG BUCK 5V 1.8A DSO-8-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8-27
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
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В кошику
од. на суму грн.
| IFX24401TE V50 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LDO 5V 0.3A TO252-5
Description: IC REG LDO 5V 0.3A TO252-5
на замовлення 5521 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IFX91041EJVXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 1.8A DSO-8-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8-27
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
Description: IC REG BUCK ADJ 1.8A DSO-8-27
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8-27
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IFX1021SJ |
![]() |
Виробник: Infineon Technologies
Description: IC TXRX LIN BUS 8DSO
Description: IC TXRX LIN BUS 8DSO
товару немає в наявності
В кошику
од. на суму грн.
| IFX21004TNV51AKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V/15V TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA, 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 40V
Number of Regulators: 2
Supplier Device Package: PG-TO220-5
Voltage - Output (Min/Fixed): 5V, 15V
Part Status: Obsolete
PSRR: 55dB (100Hz), 50dB (100Hz)
Voltage Dropout (Max): 10V @ 100mA, 6V @ 30mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 3.5 mA
Description: IC REG LINEAR 5V/15V TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA, 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 40V
Number of Regulators: 2
Supplier Device Package: PG-TO220-5
Voltage - Output (Min/Fixed): 5V, 15V
Part Status: Obsolete
PSRR: 55dB (100Hz), 50dB (100Hz)
Voltage Dropout (Max): 10V @ 100mA, 6V @ 30mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 3.5 mA
товару немає в наявності
В кошику
од. на суму грн.
| IRFSL4510PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 61A TO262
Description: MOSFET N-CH 100V 61A TO262
товару немає в наявності
В кошику
од. на суму грн.
| IRFR4510PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Description: MOSFET N CH 100V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF7946TR1PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 90A DIRECTFET MX
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
Description: MOSFET N CH 40V 90A DIRECTFET MX
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFB7434PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 882 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.84 грн |
| 50+ | 105.63 грн |
| 100+ | 95.44 грн |
| 500+ | 72.81 грн |
| IRFB7437PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 2241 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.33 грн |
| 50+ | 67.42 грн |
| 100+ | 60.43 грн |
| 500+ | 45.18 грн |
| 1000+ | 41.47 грн |
| 2000+ | 38.35 грн |
| IRFB7446PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
на замовлення 1837 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.95 грн |
| 50+ | 51.57 грн |
| 100+ | 46.01 грн |
| 500+ | 34.02 грн |
| 1000+ | 31.07 грн |
| IRFP7430PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 366W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 366W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 517 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.83 грн |
| 25+ | 147.23 грн |
| 100+ | 120.38 грн |
| 500+ | 92.78 грн |
| IRFB4510PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
Description: MOSFET N-CH 100V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IRFS4510PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFI4510GPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 35A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 21A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2998 pF @ 50 V
Description: MOSFET N CH 100V 35A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 21A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2998 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFR4510TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Description: MOSFET N CH 100V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 41.50 грн |
| 4000+ | 37.97 грн |
| IRFU4510PBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Description: MOSFET N-CH 100V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
на замовлення 1310 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.55 грн |
| 75+ | 81.49 грн |
| 150+ | 73.55 грн |
| 525+ | 58.43 грн |
| 1050+ | 53.84 грн |
| IRFB7440PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.64 грн |
| 50+ | 59.54 грн |
| 100+ | 53.24 грн |
| 500+ | 39.59 грн |
| IRF7946TR1PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 40V 90A DIRECTFET MX
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
Description: MOSFET N CH 40V 90A DIRECTFET MX
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
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| IRFH7004TR2PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 40V 100A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
Description: MOSFET N CH 40V 100A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
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| IRFH7110TR2PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 100V 11A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
Description: MOSFET N CH 100V 11A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
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| IRFR4510TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 100V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
Description: MOSFET N CH 100V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 38A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3031 pF @ 50 V
на замовлення 19350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.31 грн |
| 10+ | 76.82 грн |
| 100+ | 59.75 грн |
| 500+ | 45.52 грн |
| 1000+ | 43.61 грн |
| PRG832801-8B |
Виробник: Infineon Technologies
Description: M2 GANG PROGRAMMER 4X40+4X56
Description: M2 GANG PROGRAMMER 4X40+4X56
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| PRG833701-4A |
Виробник: Infineon Technologies
Description: COMMANCHE2 GANG PROG IR3563
Description: COMMANCHE2 GANG PROG IR3563
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| PRG833701-4B |
![]() |
Виробник: Infineon Technologies
Description: COMMANCHE2 GANG PROG IR3566
Packaging: Box
Type: Programmer
Contents: Board(s)
Part Status: Active
Description: COMMANCHE2 GANG PROG IR3566
Packaging: Box
Type: Programmer
Contents: Board(s)
Part Status: Active
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| CHL8550CRT |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 10ns, 8ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 10ns, 8ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| AUIPS1031RTRL |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252AA (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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| AUIPS1041LTR |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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| AUIPS1042GTR |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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| AUIPS1052GTR |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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| AUIPS2031RTRL |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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