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IPD053N06NATMA1 IPD053N06NATMA1 Infineon Technologies IPD053N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c22c4c3499f Description: MOSFET N-CH 60V 18A/45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 6381 шт:
термін постачання 21-31 дні (днів)
3+147.33 грн
10+90.53 грн
100+61.14 грн
500+45.56 грн
1000+42.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 4897 шт:
термін постачання 21-31 дні (днів)
3+151.58 грн
10+93.57 грн
100+63.34 грн
500+47.32 грн
1000+44.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+43.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 32718 шт:
термін постачання 21-31 дні (днів)
2+271.66 грн
10+171.39 грн
100+119.98 грн
500+99.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NSATMA1 Infineon Technologies BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 16418 шт:
термін постачання 21-31 дні (днів)
3+153.29 грн
10+136.79 грн
100+96.68 грн
500+73.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC039N06NSATMA1 BSC039N06NSATMA1 Infineon Technologies BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7 Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 5325 шт:
термін постачання 21-31 дні (днів)
2+170.32 грн
10+104.80 грн
100+71.35 грн
500+53.52 грн
1000+51.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSZ042N06NSATMA1 BSZ042N06NSATMA1 Infineon Technologies BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 11667 шт:
термін постачання 21-31 дні (днів)
5+68.13 грн
10+54.21 грн
100+48.41 грн
500+44.57 грн
1000+43.24 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC028N06NSATMA1 BSC028N06NSATMA1 Infineon Technologies BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9 Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 62262 шт:
термін постачання 21-31 дні (днів)
2+206.94 грн
10+129.08 грн
100+88.96 грн
500+68.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
товару немає в наявності
В кошику  од. на суму  грн.
IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
4+103.04 грн
10+62.98 грн
100+41.79 грн
500+30.69 грн
1000+27.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP50R380CEXKSA1 IPP50R380CEXKSA1 Infineon Technologies IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0 Description: MOSFET N-CH 500V 9.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 517 шт:
термін постачання 21-31 дні (днів)
4+110.71 грн
50+50.38 грн
100+46.85 грн
500+34.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA50R800CE IPA50R800CE Infineon Technologies IPA50R800CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304339d29c450139d82a1c8656be Description: MOSFET N-CH 500V 5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товару немає в наявності
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IDH05G65C5XKSA1 IDH05G65C5XKSA1 Infineon Technologies IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e Description: DIODE SIL CARB 650V 5A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
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IDH08G65C5XKSA1 IDH08G65C5XKSA1 Infineon Technologies IDH08G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a068f5352012b Description: DIODE SIL CARB 650V 8A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 280 µA @ 650 V
товару немає в наявності
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IDW30G65C5FKSA1 IDW30G65C5FKSA1 Infineon Technologies IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca Description: DIODE SIC 650V 30A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
товару немає в наявності
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IDW40G65C5FKSA1 IDW40G65C5FKSA1 Infineon Technologies IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Description: DIODE SIC 650V 40A PGTO24731
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 650 V
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IPA50R190CE IPA50R190CE Infineon Technologies IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb Description: MOSFET N-CH 500V 18.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
товару немає в наявності
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IPA50R650CE IPA50R650CE Infineon Technologies IPA50R650CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d4d1cdd003a9 Description: MOSFET N-CH 500V 6.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товару немає в наявності
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IPA50R380CE IPA50R380CE Infineon Technologies IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0 Description: MOSFET N-CH 500V 9.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товару немає в наявності
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IDH20G65C5XKSA1 IDH20G65C5XKSA1 Infineon Technologies IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6 Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDW10G65C5FKSA1 IDW10G65C5FKSA1 Infineon Technologies IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Description: DIODE SIC 650V 10A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDH03G65C5XKSA1 IDH03G65C5XKSA1 Infineon Technologies IDH03G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b1013a0316abfd58ff Description: DIODE SIL CARB 650V 3A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
IDH06G65C5XKSA1 IDH06G65C5XKSA1 Infineon Technologies IDH06G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a0353dadb5970 Description: DIODE SCHOTTKY 650V 6A TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDH04G65C5XKSA1 IDH04G65C5XKSA1 Infineon Technologies IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947 Description: DIODE SIL CARB 650V 4A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IDW12G65C5 IDW12G65C5 Infineon Technologies IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f Description: DIODE SCHOTTKY 650V 12A TO247-3
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IDW16G65C5 IDW16G65C5 Infineon Technologies IDW16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30433899edae0138a478b3db208c Description: DIODE SCHOTTKY 650V 16A TO247-3
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IDW20G65C5FKSA1 IDW20G65C5FKSA1 Infineon Technologies IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Description: DIODE SCHOTTKY 650V 20A TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
IDH09G65C5XKSA1 IDH09G65C5XKSA1 Infineon Technologies IDH09G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a069a60db0147 Description: DIODE SIL CARB 650V 9A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A
Current - Reverse Leakage @ Vr: 310 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW50R190CEFKSA1 IPW50R190CEFKSA1 Infineon Technologies IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb Description: MOSFET N-CH 500V 18.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R800CEBTMA1 IPD50R800CEBTMA1 Infineon Technologies Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2 Description: MOSFET N CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товару немає в наявності
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IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 6.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 6.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IDH16G65C5XKSA1 IDH16G65C5XKSA1 Infineon Technologies IDH16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06c7efb201a1 Description: DIODE SCHOTTKY 650V 16A TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R380CEBTMA1 IPD50R380CEBTMA1 Infineon Technologies Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товару немає в наявності
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IRFH7446TRPBF IRFH7446TRPBF Infineon Technologies irfh7446pbf.pdf?fileId=5546d462533600a40153561f17701eef Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
4000+42.46 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF7820TRPBF IRF7820TRPBF Infineon Technologies infineon-irf7820-datasheet-en.pdf Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+38.51 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFR7440TRPBF IRFR7440TRPBF Infineon Technologies irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
на замовлення 1586 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRFS7437TRLPBF IRFS7437TRLPBF Infineon Technologies irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Description: MOSFET N CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+55.75 грн
1600+49.62 грн
2400+47.55 грн
4000+43.90 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFS7437-7PPBF IRFS7437-7PPBF Infineon Technologies irfs7437-7ppbf.pdf?fileId=5546d462533600a40153563a851321d0 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
товару немає в наявності
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IRFR7440PBF IRFR7440PBF Infineon Technologies irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Description: MOSFET N CH 40V 90A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7446TR2PBF IRFH7446TR2PBF Infineon Technologies irfh7446pbf.pdf?fileId=5546d462533600a40153561f17701eef Description: MOSFET N CH 40V 85A PQFN 5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7440TRLPBF IRFS7440TRLPBF Infineon Technologies irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Description: MOSFET N CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
800+48.35 грн
1600+42.93 грн
2400+41.08 грн
4000+37.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFSL7437PBF IRFSL7437PBF Infineon Technologies irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)
2+183.95 грн
50+87.12 грн
100+78.33 грн
500+59.06 грн
1000+54.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS7437PBF IRFS7437PBF Infineon Technologies irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Description: MOSFET N CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
товару немає в наявності
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IRFS7437TRL7PP IRFS7437TRL7PP Infineon Technologies irfs7437-7ppbf.pdf?fileId=5546d462533600a40153563a851321d0 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
товару немає в наявності
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IRFS7440PBF IRFS7440PBF Infineon Technologies irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Description: MOSFET N CH 40V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
товару немає в наявності
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IRFS7440TRLPBF IRFS7440TRLPBF Infineon Technologies irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Description: MOSFET N CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 6261 шт:
термін постачання 21-31 дні (днів)
3+154.14 грн
10+94.55 грн
100+64.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFH7440TR2PBF IRFH7440TR2PBF Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
товару немає в наявності
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IRFS7437TRL7PP IRFS7437TRL7PP Infineon Technologies irfs7437-7ppbf.pdf?fileId=5546d462533600a40153563a851321d0 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
2+219.71 грн
10+137.44 грн
100+95.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS7437TRLPBF IRFS7437TRLPBF Infineon Technologies irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2 Description: MOSFET N CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 6214 шт:
термін постачання 21-31 дні (днів)
2+173.73 грн
10+107.43 грн
100+73.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC014N04LSATMA1 BSC014N04LSATMA1 Infineon Technologies DS_BSC014N04LS_2_1.PDF?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552e99a8147f1 Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+37.75 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+89.77 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NSATMA1 Infineon Technologies BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+71.64 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC028N06NSATMA1 BSC028N06NSATMA1 Infineon Technologies BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9 Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
5000+62.19 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC039N06NSATMA1 BSC039N06NSATMA1 Infineon Technologies BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7 Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+47.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ023N04LSATMA1 BSZ023N04LSATMA1 Infineon Technologies BSZ023N04LS.pdf Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 20 V
товару немає в наявності
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BSZ042N06NSATMA1 BSZ042N06NSATMA1 Infineon Technologies BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+39.09 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPD50R280CEBTMA1 IPD50R280CEBTMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
товару немає в наявності
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IPD50R500CEBTMA1 IPD50R500CEBTMA1 Infineon Technologies dgdl?fileId=db3a3043382e83730138514ff7881004 Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
товару немає в наявності
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IPD50R950CEBTMA1 IPD50R950CEBTMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товару немає в наявності
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IPD053N06NATMA1 IPD053N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c22c4c3499f
IPD053N06NATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 6381 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.33 грн
10+90.53 грн
100+61.14 грн
500+45.56 грн
1000+42.78 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 4897 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.58 грн
10+93.57 грн
100+63.34 грн
500+47.32 грн
1000+44.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+43.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSC014N06NSATMA1 BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd
BSC014N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 32718 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+271.66 грн
10+171.39 грн
100+119.98 грн
500+99.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c
BSC016N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 16418 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.29 грн
10+136.79 грн
100+96.68 грн
500+73.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC039N06NSATMA1 BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7
BSC039N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 5325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.32 грн
10+104.80 грн
100+71.35 грн
500+53.52 грн
1000+51.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSZ042N06NSATMA1 BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd
BSZ042N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 11667 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+68.13 грн
10+54.21 грн
100+48.41 грн
500+44.57 грн
1000+43.24 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSC028N06NSATMA1 BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9
BSC028N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 62262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.94 грн
10+129.08 грн
100+88.96 грн
500+68.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
товару немає в наявності
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IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.04 грн
10+62.98 грн
100+41.79 грн
500+30.69 грн
1000+27.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP50R380CEXKSA1 IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0
IPP50R380CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 517 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+110.71 грн
50+50.38 грн
100+46.85 грн
500+34.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA50R800CE IPA50R800CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a304339d29c450139d82a1c8656be
IPA50R800CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товару немає в наявності
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IDH05G65C5XKSA1 IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e
IDH05G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
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IDH08G65C5XKSA1 IDH08G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a068f5352012b
IDH08G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 8A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 280 µA @ 650 V
товару немає в наявності
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IDW30G65C5FKSA1 IDW30G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4b3a2b221ca
IDW30G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 650V 30A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
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IDW40G65C5FKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 650V 40A PGTO24731
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 650 V
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IPA50R190CE IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb
IPA50R190CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
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IPA50R650CE IPA50R650CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d4d1cdd003a9
IPA50R650CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товару немає в наявності
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IPA50R380CE IPx50R380CE_2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432e398416012e5273936c15b0
IPA50R380CE
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 9.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товару немає в наявності
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IDH20G65C5XKSA1 IDH20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06d5f79701c6
IDH20G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 650 V
товару немає в наявності
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IDW10G65C5FKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 650V 10A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 650 V
товару немає в наявності
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IDH03G65C5XKSA1 IDH03G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b1013a0316abfd58ff
IDH03G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 3A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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IDH06G65C5XKSA1 IDH06G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a0353dadb5970
IDH06G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 6A TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDH04G65C5XKSA1 IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947
IDH04G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 4A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
товару немає в наявності
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IDW12G65C5 IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f
IDW12G65C5
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 12A TO247-3
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IDW16G65C5 IDW16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30433899edae0138a478b3db208c
IDW16G65C5
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 16A TO247-3
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IDW20G65C5FKSA1 IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5
IDW20G65C5FKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 20A TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
IDH09G65C5XKSA1 IDH09G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a069a60db0147
IDH09G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 9A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A
Current - Reverse Leakage @ Vr: 310 µA @ 650 V
товару немає в наявності
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IPW50R190CEFKSA1 IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb
IPW50R190CEFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
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IPD50R800CEBTMA1 Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2
IPD50R800CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N CH 500V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
товару немає в наявності
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IPD50R650CEBTMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R650CEBTMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO252-3
товару немає в наявності
В кошику  од. на суму  грн.
IDH16G65C5XKSA1 IDH16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a30433a047ba0013a06c7efb201a1
IDH16G65C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 650V 16A TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IPD50R380CEBTMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
IPD50R380CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
товару немає в наявності
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IRFH7446TRPBF irfh7446pbf.pdf?fileId=5546d462533600a40153561f17701eef
IRFH7446TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+42.46 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRF7820TRPBF infineon-irf7820-datasheet-en.pdf
IRF7820TRPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+38.51 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFR7440TRPBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
IRFR7440TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
на замовлення 1586 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRFS7437TRLPBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFS7437TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+55.75 грн
1600+49.62 грн
2400+47.55 грн
4000+43.90 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFS7437-7PPBF irfs7437-7ppbf.pdf?fileId=5546d462533600a40153563a851321d0
IRFS7437-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
товару немає в наявності
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IRFR7440PBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
IRFR7440PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 90A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 25 V
товару немає в наявності
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IRFH7446TR2PBF irfh7446pbf.pdf?fileId=5546d462533600a40153561f17701eef
IRFH7446TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 85A PQFN 5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7440TRLPBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFS7440TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+48.35 грн
1600+42.93 грн
2400+41.08 грн
4000+37.04 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IRFSL7437PBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFSL7437PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 1197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.95 грн
50+87.12 грн
100+78.33 грн
500+59.06 грн
1000+54.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS7437PBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFS7437PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7437TRL7PP irfs7437-7ppbf.pdf?fileId=5546d462533600a40153563a851321d0
IRFS7437TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
товару немає в наявності
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IRFS7440PBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFS7440PBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7440TRLPBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFS7440TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
на замовлення 6261 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.14 грн
10+94.55 грн
100+64.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFH7440TR2PBF irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
IRFH7440TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 85A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4574 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS7437TRL7PP irfs7437-7ppbf.pdf?fileId=5546d462533600a40153563a851321d0
IRFS7437TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.71 грн
10+137.44 грн
100+95.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFS7437TRLPBF irfs7437pbf.pdf?fileId=5546d462533600a40153563a8ca421d2
IRFS7437TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7330 pF @ 25 V
на замовлення 6214 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.73 грн
10+107.43 грн
100+73.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC014N04LSATMA1 DS_BSC014N04LS_2_1.PDF?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552e99a8147f1
BSC014N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+37.75 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC014N06NSATMA1 BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd
BSC014N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+89.77 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c
BSC016N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+71.64 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC028N06NSATMA1 BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9
BSC028N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+62.19 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC039N06NSATMA1 BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7
BSC039N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+47.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ023N04LSATMA1 BSZ023N04LS.pdf
BSZ023N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 20 V
товару немає в наявності
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BSZ042N06NSATMA1 BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd
BSZ042N06NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+39.09 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPD50R280CEBTMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
товару немає в наявності
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IPD50R500CEBTMA1 dgdl?fileId=db3a3043382e83730138514ff7881004
IPD50R500CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
товару немає в наявності
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IPD50R950CEBTMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPD50R950CEBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
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