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IPB034N06L3GATMA1 IPB034N06L3GATMA1 Infineon Technologies IPP037N06L3_Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4561341f7d38 Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 IPB035N08N3GATMA1 Infineon Technologies IPP037N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae8426111565b Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
1+374.70 грн
10+240.52 грн
100+171.92 грн
500+133.88 грн
В кошику  од. на суму  грн.
IPB037N06N3 G IPB037N06N3 G Infineon Technologies IPB037N06N3+G+_Rev1.01.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c2d4f447647 Description: MOSFET N-CH 60V 90A TO263-3
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB039N04LGATMA1 IPB039N04LGATMA1 Infineon Technologies IP%28B%2CP%29039N04L_G.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB041N04NGATMA1 IPB041N04NGATMA1 Infineon Technologies IPB%2CIPP041N04N_G.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB049N06L3GATMA1 IPB049N06L3GATMA1 Infineon Technologies IPx049,52N06L3_G.pdf Description: MOSFET N-CH 60V 80A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB049NE7N3GATMA1 IPB049NE7N3GATMA1 Infineon Technologies IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
2+234.19 грн
10+155.07 грн
100+112.44 грн
500+87.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N06N3GATMA1 IPB054N06N3GATMA1 Infineon Technologies IPP_B057N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b439f1d4d93 Description: MOSFET N-CH 60V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
2+185.65 грн
10+115.30 грн
100+79.06 грн
500+59.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N08N3GATMA1 IPB054N08N3GATMA1 Infineon Technologies IPP057N08N3_Rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117cf0cf5951d06 Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
2+193.31 грн
10+120.47 грн
100+82.79 грн
500+62.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB065N15N3GATMA1 IPB065N15N3GATMA1 Infineon Technologies IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
на замовлення 1383 шт:
термін постачання 21-31 дні (днів)
1+484.56 грн
10+314.08 грн
100+229.63 грн
В кошику  од. на суму  грн.
IPB067N08N3GATMA1 IPB067N08N3GATMA1 Infineon Technologies %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
на замовлення 5287 шт:
термін постачання 21-31 дні (днів)
2+228.23 грн
10+151.46 грн
100+109.91 грн
500+85.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB075N04LGATMA1 IPB075N04LGATMA1 Infineon Technologies IPB075N04L_G.pdf Description: MOSFET N-CH 40V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB081N06L3GATMA1 IPB081N06L3GATMA1 Infineon Technologies IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2 Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
на замовлення 5113 шт:
термін постачання 21-31 дні (днів)
4+89.42 грн
10+68.23 грн
100+49.50 грн
500+44.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPB083N10N3GATMA1 IPB083N10N3GATMA1 Infineon Technologies IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
на замовлення 4488 шт:
термін постачання 21-31 дні (днів)
2+181.39 грн
10+111.28 грн
100+87.56 грн
500+66.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB090N06N3GATMA1 IPB090N06N3GATMA1 Infineon Technologies IPP_B093N06N3_Rev1.0.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c3043a67656 Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB097N08N3 G IPB097N08N3 G Infineon Technologies IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619 Description: MOSFET N-CH 80V 70A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB107N20NAATMA1 IPB107N20NAATMA1 Infineon Technologies IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3 Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
1+705.12 грн
10+467.27 грн
100+347.41 грн
В кошику  од. на суму  грн.
IPB108N15N3GATMA1 IPB108N15N3GATMA1 Infineon Technologies Infineon-IPP_I111N15N3_IPB108N15N3-DS-v02_02-EN.pdf?fileId=db3a304325305e6d01254a5795541b4f Description: MOSFET N-CH 150V 83A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
на замовлення 4534 шт:
термін постачання 21-31 дні (днів)
2+301.47 грн
10+190.83 грн
100+134.30 грн
500+113.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB144N12N3GATMA1 IPB144N12N3GATMA1 Infineon Technologies IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01 Description: MOSFET N-CH 120V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
2+220.56 грн
10+137.77 грн
100+95.35 грн
500+72.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB530N15N3GATMA1 IPB530N15N3GATMA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
товару немає в наявності
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IPB60R099C6ATMA1 IPB60R099C6ATMA1 Infineon Technologies IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Description: MOSFET N-CH 600V 37.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
1+548.43 грн
10+356.23 грн
100+259.09 грн
В кошику  од. на суму  грн.
IPB60R125C6ATMA1 IPB60R125C6ATMA1 Infineon Technologies IPB60R125C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc2012400cb0d9d5d2d Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
1+393.44 грн
10+252.50 грн
100+180.66 грн
500+163.22 грн
В кошику  од. на суму  грн.
IPB60R160C6ATMA1 IPB60R160C6ATMA1 Infineon Technologies IPB60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123ffdae47e5c35 Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
2+311.69 грн
10+197.63 грн
100+139.38 грн
500+119.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R165CPATMA1 IPB60R165CPATMA1 Infineon Technologies IPB60R165CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd38f48fc Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 3574 шт:
термін постачання 21-31 дні (днів)
1+345.75 грн
10+220.10 грн
100+156.19 грн
500+136.84 грн
В кошику  од. на суму  грн.
IPB60R299CPATMA1 IPB60R299CPATMA1 Infineon Technologies IPB60R299CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d30161ca0c0b Description: MOSFET N-CH 600V 11A TO263-3
товару немає в наявності
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IPB60R385CP IPB60R385CP Infineon Technologies IPB60R385CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e836749df Description: MOSFET N-CH 600V 9A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R520CPATMA1 IPB60R520CPATMA1 Infineon Technologies IPB60R520CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792e20dc045d Description: MOSFET N-CH 600V 6.8A TO-263
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R600C6ATMA1 IPB60R600C6ATMA1 Infineon Technologies IPx60R600C6.pdf Description: MOSFET N-CH 600V 7.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
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IPB60R950C6 IPB60R950C6 Infineon Technologies IPB60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a8282c217d66 Description: MOSFET N-CH 600V 4.4A TO263
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB65R110CFDATMA1 IPB65R110CFDATMA1 Infineon Technologies Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
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IPB65R280C6ATMA1 IPB65R280C6ATMA1 Infineon Technologies IPx65R280C6.pdf Description: MOSFET N-CH 650V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товару немає в наявності
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IPB65R310CFDATMA1 IPB65R310CFDATMA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPB65R600C6ATMA1 IPB65R600C6ATMA1 Infineon Technologies DS_448_IPx65R600C6.pdf Description: MOSFET N-CH 650V 7.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
товару немає в наявності
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IPB65R660CFD IPB65R660CFD Infineon Technologies IPA65R660CFD2.41.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a30432e0bea21012e14dccc656df9 Description: MOSFET N-CH 650V 6A TO263
на замовлення 21116 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD038N04NGBTMA1 IPD038N04NGBTMA1 Infineon Technologies IPD038N04N_G.pdf Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
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IPD042P03L3GBTMA1 IPD042P03L3GBTMA1 Infineon Technologies Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
товару немає в наявності
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IPD053N06N3GBTMA1 IPD053N06N3GBTMA1 Infineon Technologies IPD053N06N3_G.pdf Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
товару немає в наявності
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IPD068P03L3 G IPD068P03L3 G Infineon Technologies Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94 Description: MOSFET P-CH 30V 70A TO252-3
на замовлення 6607 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD088N06N3GBTMA1 IPD088N06N3GBTMA1 Infineon Technologies IPD088N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b2351db4d5c Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товару немає в наявності
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IPD180N10N3GBTMA1 IPD180N10N3GBTMA1 Infineon Technologies IPD180N10N3_G.pdf Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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IPD250N06N3GBTMA1 IPD250N06N3GBTMA1 Infineon Technologies IPD250N06N3_G.pdf Description: MOSFET N-CH 60V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товару немає в наявності
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IPD530N15N3GBTMA1 IPD530N15N3GBTMA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
товару немає в наявності
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IPD60R520C6 IPD60R520C6 Infineon Technologies Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a Description: MOSFET N-CH 600V 8.1A TO252
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD60R520CPBTMA1 IPD60R520CPBTMA1 Infineon Technologies IPD60R520CP.pdf Description: MOSFET N-CH 600V 6.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
товару немає в наявності
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IPD60R600CPBTMA1 IPD60R600CPBTMA1 Infineon Technologies Infineon-IPD60R600CP-DS-v02_01-en.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012385657d1567e3 Description: MOSFET N-CH 600V 6.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD90R1K2C3BTMA1 IPD90R1K2C3BTMA1 Infineon Technologies IPD90R1K2C3.pdf Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
SPD50N03S2L06GBTMA1 SPD50N03S2L06GBTMA1 Infineon Technologies SPD50N03S2L-06G.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
2N7002DWH6327XTSA1 2N7002DWH6327XTSA1 Infineon Technologies 2N7002DW_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431a5c32f2011ad94ed41363f2 Description: MOSFET 2N-CH 60V 0.3A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 108804 шт:
термін постачання 21-31 дні (днів)
16+22.14 грн
26+13.04 грн
100+8.18 грн
500+5.66 грн
1000+5.01 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BSB012NE2LX BSB012NE2LX Infineon Technologies BSB012NE2LX.pdf Description: MOSFET N-CH 25V 37A/170A 2WDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 Infineon Technologies BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577 Description: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 Infineon Technologies BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838 Description: MOSFET N-CH 60V 22A/90A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 102µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
на замовлення 6668 шт:
термін постачання 21-31 дні (днів)
2+286.99 грн
10+180.74 грн
100+126.31 грн
500+96.71 грн
1000+89.70 грн
2000+84.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB044N08NN3GXUMA1 BSB044N08NN3GXUMA1 Infineon Technologies BSB044N08NN3+G_Rev+1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30435819ae2e012e385cde7b70d4 Description: MOSFET N-CH 80V 18A/90A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+329.57 грн
10+209.61 грн
100+148.60 грн
500+115.04 грн
1000+109.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB056N10NN3GXUMA1 BSB056N10NN3GXUMA1 Infineon Technologies BSB056N10NN3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30442e152e91012e390b9a631459 Description: MOSFET N-CH 100V 9A/83A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
2+308.28 грн
10+194.11 грн
100+136.04 грн
500+104.39 грн
1000+96.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843 Description: MOSFET N-CH 150V 9A WDSON-2
на замовлення 9105 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSB280N15NZ3GXUMA1 BSB280N15NZ3GXUMA1 Infineon Technologies BSB280N15NZ3+G+Rev+2.4_.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b0b544c3852 Description: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC009NE2LSATMA1 BSC009NE2LSATMA1 Infineon Technologies infineon-bsc009ne2ls-datasheet-en.pdf?fileId=db3a304332d040720132dd4232240e1d Description: MOSFET N-CH 25V 41A/255A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)
3+150.73 грн
10+92.75 грн
100+62.77 грн
500+46.83 грн
1000+44.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 Infineon Technologies BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
на замовлення 14695 шт:
термін постачання 21-31 дні (днів)
3+160.95 грн
10+99.23 грн
100+67.43 грн
500+50.50 грн
1000+48.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC011N03LSIATMA1 BSC011N03LSIATMA1 Infineon Technologies BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66 Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 13296 шт:
термін постачання 21-31 дні (днів)
3+149.03 грн
10+91.35 грн
100+61.82 грн
500+46.13 грн
1000+43.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 Infineon Technologies BSC014NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b0024571b1 Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
на замовлення 11218 шт:
термін постачання 21-31 дні (днів)
3+147.33 грн
10+90.21 грн
100+60.97 грн
500+45.44 грн
1000+42.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC018NE2LSIATMA1 BSC018NE2LSIATMA1 Infineon Technologies BSC018NE2LSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b8abf971c2 Description: MOSFET N-CH 25V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
на замовлення 9250 шт:
термін постачання 21-31 дні (днів)
3+114.97 грн
10+90.29 грн
100+70.22 грн
500+55.86 грн
1000+45.50 грн
2000+42.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB034N06L3GATMA1 IPP037N06L3_Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4561341f7d38
IPB034N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB035N08N3GATMA1 IPP037N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae8426111565b
IPB035N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
на замовлення 1230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.70 грн
10+240.52 грн
100+171.92 грн
500+133.88 грн
В кошику  од. на суму  грн.
IPB037N06N3 G IPB037N06N3+G+_Rev1.01.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c2d4f447647
IPB037N06N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
на замовлення 2504 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPB039N04LGATMA1 IP%28B%2CP%29039N04L_G.pdf
IPB039N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB041N04NGATMA1 IPB%2CIPP041N04N_G.pdf
IPB041N04NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB049N06L3GATMA1 IPx049,52N06L3_G.pdf
IPB049N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB049NE7N3GATMA1 IPB049NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a517a48e0bb9
IPB049NE7N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.19 грн
10+155.07 грн
100+112.44 грн
500+87.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N06N3GATMA1 IPP_B057N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b439f1d4d93
IPB054N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.65 грн
10+115.30 грн
100+79.06 грн
500+59.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB054N08N3GATMA1 IPP057N08N3_Rev1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117cf0cf5951d06
IPB054N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 40 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.31 грн
10+120.47 грн
100+82.79 грн
500+62.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB065N15N3GATMA1 IPB065N15N3+G_Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0379d1225c
IPB065N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
на замовлення 1383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+484.56 грн
10+314.08 грн
100+229.63 грн
В кошику  од. на суму  грн.
IPB067N08N3GATMA1 %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf
IPB067N08N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
на замовлення 5287 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.23 грн
10+151.46 грн
100+109.91 грн
500+85.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB075N04LGATMA1 IPB075N04L_G.pdf
IPB075N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB081N06L3GATMA1 IPP_B084N06L3_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b4592273f7db2
IPB081N06L3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
на замовлення 5113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.42 грн
10+68.23 грн
100+49.50 грн
500+44.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPB083N10N3GATMA1 IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPB083N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
на замовлення 4488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+181.39 грн
10+111.28 грн
100+87.56 грн
500+66.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB090N06N3GATMA1 IPP_B093N06N3_Rev1.0.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a304317a7483601182c3043a67656
IPB090N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB097N08N3 G IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619
IPB097N08N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO263-3
товару немає в наявності
В кошику  од. на суму  грн.
IPB107N20NAATMA1 IPP110N20NA_IPB107N20NA+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a3043300464130130307ce52a20a3
IPB107N20NAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+705.12 грн
10+467.27 грн
100+347.41 грн
В кошику  од. на суму  грн.
IPB108N15N3GATMA1 Infineon-IPP_I111N15N3_IPB108N15N3-DS-v02_02-EN.pdf?fileId=db3a304325305e6d01254a5795541b4f
IPB108N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 83A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 160µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
на замовлення 4534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+301.47 грн
10+190.83 грн
100+134.30 грн
500+113.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB144N12N3GATMA1 IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01
IPB144N12N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 56A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 61µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.56 грн
10+137.77 грн
100+95.35 грн
500+72.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB530N15N3GATMA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPB530N15N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R099C6ATMA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPB60R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+548.43 грн
10+356.23 грн
100+259.09 грн
В кошику  од. на суму  грн.
IPB60R125C6ATMA1 IPB60R125C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc2012400cb0d9d5d2d
IPB60R125C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+393.44 грн
10+252.50 грн
100+180.66 грн
500+163.22 грн
В кошику  од. на суму  грн.
IPB60R160C6ATMA1 IPB60R160C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304323b87bc20123ffdae47e5c35
IPB60R160C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
на замовлення 1965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+311.69 грн
10+197.63 грн
100+139.38 грн
500+119.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R165CPATMA1 IPB60R165CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dd38f48fc
IPB60R165CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
на замовлення 3574 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+345.75 грн
10+220.10 грн
100+156.19 грн
500+136.84 грн
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IPB60R299CPATMA1 IPB60R299CP_rev2.0.pdf?folderId=db3a304314dca38901152837f87d12ad&fileId=db3a30431689f4420116d30161ca0c0b
IPB60R299CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
товару немає в наявності
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IPB60R385CP IPB60R385CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e836749df
IPB60R385CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO-263
товару немає в наявності
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IPB60R520CPATMA1 IPB60R520CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792e20dc045d
IPB60R520CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO-263
товару немає в наявності
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IPB60R600C6ATMA1 IPx60R600C6.pdf
IPB60R600C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPB60R950C6 IPB60R950C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30432239cccd0122a8282c217d66
IPB60R950C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO263
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)
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IPB65R110CFDATMA1 Infineon-IPX65R110CFD-DS-v02_06-en.pdf?fileId=db3a30433004641301306abd8e2041b1
IPB65R110CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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IPB65R280C6ATMA1 IPx65R280C6.pdf
IPB65R280C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPB65R310CFDATMA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPB65R310CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPB65R600C6ATMA1 DS_448_IPx65R600C6.pdf
IPB65R600C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPB65R660CFD IPA65R660CFD2.41.pdf?folderId=db3a3043163797a6011637d4e912003c&fileId=db3a30432e0bea21012e14dccc656df9
IPB65R660CFD
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO263
на замовлення 21116 шт:
термін постачання 21-31 дні (днів)
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IPD038N04NGBTMA1 IPD038N04N_G.pdf
IPD038N04NGBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
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IPD042P03L3GBTMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
IPD042P03L3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 15 V
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IPD053N06N3GBTMA1 IPD053N06N3_G.pdf
IPD053N06N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
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IPD068P03L3 G Infineon-IPD068P03L3_G-DS-v02_01-en.pdf?fileId=db3a30432313ff5e01232cc234f07d94
IPD068P03L3 G
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 70A TO252-3
на замовлення 6607 шт:
термін постачання 21-31 дні (днів)
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IPD088N06N3GBTMA1 IPD088N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2b2351db4d5c
IPD088N06N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
товару немає в наявності
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IPD180N10N3GBTMA1 IPD180N10N3_G.pdf
IPD180N10N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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IPD250N06N3GBTMA1 IPD250N06N3_G.pdf
IPD250N06N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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IPD530N15N3GBTMA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPD530N15N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
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IPD60R520C6 Infineon-IPD60R520C6-DS-v02_02-EN.pdf?fileId=db3a30433ee50ba8013eeb469c71164a
IPD60R520C6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO252
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
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IPD60R520CPBTMA1 IPD60R520CP.pdf
IPD60R520CPBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
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IPD60R600CPBTMA1 Infineon-IPD60R600CP-DS-v02_01-en.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012385657d1567e3
IPD60R600CPBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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IPD90R1K2C3BTMA1 IPD90R1K2C3.pdf
IPD90R1K2C3BTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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SPD50N03S2L06GBTMA1 SPD50N03S2L-06G.pdf
SPD50N03S2L06GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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2N7002DWH6327XTSA1 2N7002DW_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431a5c32f2011ad94ed41363f2
2N7002DWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 0.3A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 108804 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+22.14 грн
26+13.04 грн
100+8.18 грн
500+5.66 грн
1000+5.01 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BSB012NE2LX BSB012NE2LX.pdf
BSB012NE2LX
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 37A/170A 2WDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSB013NE2LXIXUMA1 BSB013NE2LXI_Rev+2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432e398416012e47a158802577
BSB013NE2LXIXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
BSB028N06NN3GXUMA1 BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838
BSB028N06NN3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 22A/90A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 102µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
на замовлення 6668 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.99 грн
10+180.74 грн
100+126.31 грн
500+96.71 грн
1000+89.70 грн
2000+84.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB044N08NN3GXUMA1 BSB044N08NN3+G_Rev+1.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30435819ae2e012e385cde7b70d4
BSB044N08NN3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 18A/90A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 97µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+329.57 грн
10+209.61 грн
100+148.60 грн
500+115.04 грн
1000+109.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB056N10NN3GXUMA1 BSB056N10NN3+G_Rev+2.4_.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30442e152e91012e390b9a631459
BSB056N10NN3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9A/83A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+308.28 грн
10+194.11 грн
100+136.04 грн
500+104.39 грн
1000+96.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB165N15NZ3 G BSB165N15NZ3+G+Rev+2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b04a1353843
BSB165N15NZ3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 9A WDSON-2
на замовлення 9105 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSB280N15NZ3GXUMA1 BSB280N15NZ3+G+Rev+2.4_.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432e779412012e7b0b544c3852
BSB280N15NZ3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC009NE2LSATMA1 infineon-bsc009ne2ls-datasheet-en.pdf?fileId=db3a304332d040720132dd4232240e1d
BSC009NE2LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/255A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 255A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 12 V
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.73 грн
10+92.75 грн
100+62.77 грн
500+46.83 грн
1000+44.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC010NE2LSIATMA1 BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de
BSC010NE2LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
на замовлення 14695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.95 грн
10+99.23 грн
100+67.43 грн
500+50.50 грн
1000+48.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC011N03LSIATMA1 BSC011N03LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013097dfdcc22f66
BSC011N03LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 13296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.03 грн
10+91.35 грн
100+61.82 грн
500+46.13 грн
1000+43.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC014NE2LSIATMA1 BSC014NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b0024571b1
BSC014NE2LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
на замовлення 11218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.33 грн
10+90.21 грн
100+60.97 грн
500+45.44 грн
1000+42.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC018NE2LSIATMA1 BSC018NE2LSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f013093b8abf971c2
BSC018NE2LSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 29A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
на замовлення 9250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.97 грн
10+90.29 грн
100+70.22 грн
500+55.86 грн
1000+45.50 грн
2000+42.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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