Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119475) > Сторінка 1975 з 1992

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IM393X6E2XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IM393X6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IM393X6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IQE013N04LM6ATMA1 INFINEON TECHNOLOGIES Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
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CY8C9520A-24PVXI INFINEON TECHNOLOGIES Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Category: Unclassified
Description: CY8C9520A-24PVXI
на замовлення 495 шт:
термін постачання 14-30 дні (днів)
47+107.69 грн
Мінімальне замовлення: 47
В кошику  од. на суму  грн.
AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES AUIRGP4062D.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
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BB85702VH7902XTSA1 BB85702VH7902XTSA1 INFINEON TECHNOLOGIES BB837_BB857.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 0.45...7.2pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Mounting: SMD
Case: SC79
на замовлення 2002 шт:
термін постачання 14-30 дні (днів)
20+23.33 грн
25+17.17 грн
28+15.42 грн
100+11.00 грн
500+8.67 грн
1000+8.25 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRFP4229PBF IRFP4229PBF INFINEON TECHNOLOGIES irfp4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 173 шт:
термін постачання 14-30 дні (днів)
3+144.99 грн
10+135.83 грн
25+130.83 грн
100+122.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFP4768PBFXKMA1 IRFP4768PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
2+341.01 грн
10+213.32 грн
25+185.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP4321PBF IRFP4321PBF INFINEON TECHNOLOGIES irfp4321pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
3+177.68 грн
10+146.66 грн
25+137.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TD120N16SOFHPSA1 TD120N16SOFHPSA1 INFINEON TECHNOLOGIES TD120N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
1+2119.62 грн
5+1811.56 грн
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BCR129WH6327 BCR129WH6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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BCR129E6327 BCR129E6327 INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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BFN24E6327 BFN24E6327 INFINEON TECHNOLOGIES BFN24.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
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BCR133E6327 BCR133E6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
34+13.46 грн
50+9.23 грн
100+7.77 грн
200+6.41 грн
250+6.02 грн
400+5.32 грн
500+4.99 грн
1000+4.15 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BCR133SH6327 BCR133SH6327 INFINEON TECHNOLOGIES BCR133.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
на замовлення 15003 шт:
термін постачання 14-30 дні (днів)
49+9.33 грн
72+5.80 грн
250+4.62 грн
1000+4.47 грн
3000+4.37 грн
Мінімальне замовлення: 49
В кошику  од. на суму  грн.
BCR133WH6327XTSA1 INFINEON TECHNOLOGIES bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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CY7C1360C-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1360C-200AXCT INFINEON TECHNOLOGIES ?docID=39999 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100AXE INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1361C-100AXET INFINEON TECHNOLOGIES ?docID=50329 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100BZXE INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: FBGA165
Kind of package: in-tray
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CY7C1361C-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 133MHz
Case: TQFP100
Kind of package: in-tray
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XDPL8221XUMA1 XDPL8221XUMA1 INFINEON TECHNOLOGIES XDPL8221.pdf Category: Drivers - integrated circuits
Description: IC: driver; flyback; AC/DC switcher,LED driver; PG-DSO-16; 260uA
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: AC/DC switcher; LED driver
Case: PG-DSO-16
Output current: 260µA
Mounting: SMD
Operating voltage: 6...24V DC
Frequency: 66MHz
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IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 20mΩ
Power dissipation: 150W
Drain current: 50A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 402 шт:
термін постачання 14-30 дні (днів)
3+202.81 грн
10+99.16 грн
50+83.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES IPW60R170CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES IPP60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
2+257.55 грн
10+169.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES irfml8244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
на замовлення 3496 шт:
термін постачання 14-30 дні (днів)
30+15.26 грн
34+12.33 грн
38+11.25 грн
100+7.92 грн
500+6.42 грн
1000+5.92 грн
3000+5.25 грн
Мінімальне замовлення: 30
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IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
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IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
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IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ CP
Pulsed drain current: 27A
Gate-source voltage: ±20V
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IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
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IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES IPA60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
3+221.65 грн
Мінімальне замовлення: 3
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IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES IPA60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
1+457.67 грн
3+365.81 грн
10+294.15 грн
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IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES IPA60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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1ED020I12B2XUMA1 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
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S29GL512T10TFI010 S29GL512T10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI040 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI043 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 5643 шт:
термін постачання 14-30 дні (днів)
34+13.46 грн
41+10.17 грн
47+8.92 грн
57+7.33 грн
100+5.41 грн
500+3.77 грн
1000+3.16 грн
3000+2.76 грн
Мінімальне замовлення: 34
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SMBT3906E6327HTSA1 SMBT3906E6327HTSA1 INFINEON TECHNOLOGIES SMBT3906E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 1570 шт:
термін постачання 14-30 дні (днів)
39+11.67 грн
63+6.67 грн
77+5.43 грн
100+4.92 грн
250+4.27 грн
500+3.76 грн
1000+3.32 грн
Мінімальне замовлення: 39
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CY8C4125LTI-M445 CY8C4125LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4127LTI-M475 CY8C4127LTI-M475 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4245LTI-M445 CY8C4245LTI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CY8C4247LTI-M475 CY8C4247LTI-M475 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CY8C4248LTI-L475 CY8C4248LTI-L475 INFINEON TECHNOLOGIES CY8C4246AZI-L423.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CYUSB3304-68LTXC INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: IC: interface; SMD; 0÷70°C; QFN68; Kind of ciruit: USB controller
Type of integrated circuit: interface
Interface: I2C
Case: QFN68
Mounting: SMD
Operating temperature: 0...70°C
Kind of integrated circuit: USB controller
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AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES AIKW75N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1 INFINEON TECHNOLOGIES ITS4200SMEOHUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
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ITS4200SMEPHUMA1 INFINEON TECHNOLOGIES ITS4200SMEP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 1.4A
Number of channels: 1
Supply voltage: 11...45V DC
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IM393X6E2XKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IM393X6E3XKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IM393X6EXKLA1 Infineon-IM393-X6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d9a3578e9
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Kind of package: tube
Protection: undervoltage UVP
Operating voltage: 13.5...16.5/0...450V DC
Voltage class: 600V
Frequency: 20kHz
Technology: CIPOS™ Tiny
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IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
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CY8C9520A-24PVXI Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
Виробник: INFINEON TECHNOLOGIES
Category: Unclassified
Description: CY8C9520A-24PVXI
на замовлення 495 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
47+107.69 грн
Мінімальне замовлення: 47
В кошику  од. на суму  грн.
AUIRGP4062D AUIRGP4062D.pdf
AUIRGP4062D
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
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BB85702VH7902XTSA1 BB837_BB857.pdf
BB85702VH7902XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 0.45...7.2pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Mounting: SMD
Case: SC79
на замовлення 2002 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.33 грн
25+17.17 грн
28+15.42 грн
100+11.00 грн
500+8.67 грн
1000+8.25 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRFP4229PBF irfp4229pbf.pdf
IRFP4229PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 173 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+144.99 грн
10+135.83 грн
25+130.83 грн
100+122.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFP4768PBFXKMA1 Infineon-IRFP4768-DS-v02_00-EN.pdf?fileId=5546d462533600a40153562c959b2021
IRFP4768PBFXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Pulsed drain current: 370A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+341.01 грн
10+213.32 грн
25+185.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP4321PBF irfp4321pbf.pdf
IRFP4321PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+177.68 грн
10+146.66 грн
25+137.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TD120N16SOFHPSA1 TD120N16SOF.pdf
TD120N16SOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2119.62 грн
5+1811.56 грн
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BCR129WH6327 BCR129.pdf
BCR129WH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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BCR129E6327 BCR129.pdf
BCR129E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
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BFN24E6327 BFN24.pdf
BFN24E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 250V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
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BCR133E6327 BCR133.pdf
BCR133E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.46 грн
50+9.23 грн
100+7.77 грн
200+6.41 грн
250+6.02 грн
400+5.32 грн
500+4.99 грн
1000+4.15 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BCR133SH6327 BCR133.pdf
BCR133SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
на замовлення 15003 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
49+9.33 грн
72+5.80 грн
250+4.62 грн
1000+4.47 грн
3000+4.37 грн
Мінімальне замовлення: 49
В кошику  од. на суму  грн.
BCR133WH6327XTSA1 bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
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CY7C1360C-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1360C-200AXCT ?docID=39999
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 200MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100AXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: in-tray
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CY7C1361C-100AXET ?docID=50329
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: TQFP100
Kind of package: reel; tape
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CY7C1361C-100BZXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 100MHz
Case: FBGA165
Kind of package: in-tray
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CY7C1361C-133AXI Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Frequency: 133MHz
Case: TQFP100
Kind of package: in-tray
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XDPL8221XUMA1 XDPL8221.pdf
XDPL8221XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; flyback; AC/DC switcher,LED driver; PG-DSO-16; 260uA
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: AC/DC switcher; LED driver
Case: PG-DSO-16
Output current: 260µA
Mounting: SMD
Operating voltage: 6...24V DC
Frequency: 66MHz
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IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 20mΩ
Power dissipation: 150W
Drain current: 50A
Gate-source voltage: ±20V
Drain-source voltage: 150V
на замовлення 402 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+202.81 грн
10+99.16 грн
50+83.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R170CFD7 IPW60R170CFD7.pdf
IPW60R170CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
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IPP60R199CPXKSA1 IPP60R199CP-DTE.pdf
IPP60R199CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+257.55 грн
10+169.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFML8244TRPBF irfml8244pbf.pdf
IRFML8244TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
на замовлення 3496 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.26 грн
34+12.33 грн
38+11.25 грн
100+7.92 грн
500+6.42 грн
1000+5.92 грн
3000+5.25 грн
Мінімальне замовлення: 30
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IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
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IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
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IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Power dissipation: 83W
Case: PG-TO252
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ CP
Pulsed drain current: 27A
Gate-source voltage: ±20V
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IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
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IPA60R125C6XKSA1 IPA60R125C6-DTE.pdf
IPA60R125C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+221.65 грн
Мінімальне замовлення: 3
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IPA60R125CPXKSA1 IPA60R125CP-DTE.pdf
IPA60R125CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+457.67 грн
3+365.81 грн
10+294.15 грн
В кошику  од. на суму  грн.
IPA60R125P6XKSA1 IPA60R125P6-DTE.pdf
IPA60R125P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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1ED020I12B2XUMA1 infineon-1ed020i12-b2-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
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S29GL512T10TFI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL512T10TFI010
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
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S29GL01GT10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL01GT10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI040 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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S29GL512T10TFI043 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
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BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 5643 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.46 грн
41+10.17 грн
47+8.92 грн
57+7.33 грн
100+5.41 грн
500+3.77 грн
1000+3.16 грн
3000+2.76 грн
Мінімальне замовлення: 34
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SMBT3906E6327HTSA1 SMBT3906E6327.pdf
SMBT3906E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 1570 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.67 грн
63+6.67 грн
77+5.43 грн
100+4.92 грн
250+4.27 грн
500+3.76 грн
1000+3.32 грн
Мінімальне замовлення: 39
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CY8C4125LTI-M445 CY8C4125AZI-M443.pdf
CY8C4125LTI-M445
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4127LTI-M475 CY8C4125AZI-M443.pdf
CY8C4127LTI-M475
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
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CY8C4245LTI-M445 CY8C4245AZI-M443.pdf
CY8C4245LTI-M445
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CY8C4247LTI-M475 CY8C4245AZI-M443.pdf
CY8C4247LTI-M475
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CY8C4248LTI-L475 CY8C4246AZI-L423.pdf
CY8C4248LTI-L475
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
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CYUSB3304-68LTXC Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: IC: interface; SMD; 0÷70°C; QFN68; Kind of ciruit: USB controller
Type of integrated circuit: interface
Interface: I2C
Case: QFN68
Mounting: SMD
Operating temperature: 0...70°C
Kind of integrated circuit: USB controller
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AIKW75N60CTXKSA1 AIKW75N60CT.pdf
AIKW75N60CTXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1.pdf
ITS4200SMEOHUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
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ITS4200SMEPHUMA1 ITS4200SMEP.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 1.4A
Number of channels: 1
Supply voltage: 11...45V DC
товару немає в наявності
В кошику  од. на суму  грн.
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