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IRF4104SPBF IRF4104SPBF Infineon Technologies irf4104pbf.pdf?fileId=5546d462533600a4015355e3193d1979 description Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IRFS17N20DPBF IRFS17N20DPBF Infineon Technologies irfb17n20dpbf.pdf Description: MOSFET N-CH 200V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRG4BC10UDPBF IRG4BC10UDPBF Infineon Technologies irg4bc10udpbf.pdf?fileId=5546d462533600a40153563f006c2246 Description: IGBT 600V 8.5A 38W TO220AB
Power - Max: 38 W
Current - Collector Pulsed (Icm): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8.5 A
Part Status: Obsolete
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 140µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 40ns/87ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge: 15 nC
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IRFB4215PBF IRFB4215PBF Infineon Technologies IRFB4215PbF.pdf Description: MOSFET N-CH 60V 115A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 54A, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG4BC10UPBF IRG4BC10UPBF Infineon Technologies IRG4BC10UDPbF.pdf Description: IGBT 600V 8.5A 38W TO220AB
Power - Max: 38 W
Current - Collector Pulsed (Icm): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8.5 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 140µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 40ns/87ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRF3315LPBF IRF3315LPBF Infineon Technologies irf3315spbf.pdf Description: MOSFET N-CH 150V 21A TO262
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IRFS33N15DPBF IRFS33N15DPBF Infineon Technologies irfs33n15dpbf.pdf?fileId=5546d462533600a4015356369887216f Description: MOSFET N-CH 150V 33A D2PAK
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IRL1104SPBF IRL1104SPBF Infineon Technologies IRL1104(S,L)PbF.pdf Description: MOSFET N-CH 40V 104A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRL1104PBF IRL1104PBF Infineon Technologies IRL1104PbF.pdf Description: MOSFET N-CH 40V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRL1104LPBF IRL1104LPBF Infineon Technologies IRL1104(S,L)PbF.pdf Description: MOSFET N-CH 40V 104A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRFS23N20DPBF IRFS23N20DPBF Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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IRF4905PBF IRF4905PBF Infineon Technologies irf4905pbf.pdf?fileId=5546d462533600a4015355e329b1197e Description: MOSFET P-CH 55V 74A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 41976 шт:
термін постачання 21-31 дні (днів)
2+227.82 грн
50+109.13 грн
100+98.42 грн
500+74.77 грн
1000+69.11 грн
2000+66.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF3415PBF IRF3415PBF Infineon Technologies irf3415pbf.pdf?fileId=5546d462533600a4015355df20e21919 Description: MOSFET N-CH 150V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 2303 шт:
термін постачання 21-31 дні (днів)
2+176.68 грн
10+109.17 грн
100+74.52 грн
500+56.03 грн
1000+51.56 грн
2000+47.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLI3705NPBF IRLI3705NPBF Infineon Technologies irli3705npbf.pdf?fileId=5546d462533600a401535663deb625b9 Description: MOSFET N-CH 55V 52A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IRF5210PBF IRF5210PBF Infineon Technologies irf5210pbf.pdf?fileId=5546d462533600a4015355e3576b198b Description: MOSFET P-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 24A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 12011 шт:
термін постачання 21-31 дні (днів)
2+271.99 грн
50+132.97 грн
100+120.40 грн
500+92.34 грн
1000+85.70 грн
2000+80.13 грн
5000+74.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL3502PBF IRL3502PBF Infineon Technologies IRL3502PbF.pdf Description: MOSFET N-CH 20V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG4BC20KPBF IRG4BC20KPBF Infineon Technologies IRG4BC20KPbF.pdf Description: IGBT 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 150µJ (on), 250µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
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IRG4BC20FPBF IRG4BC20FPBF Infineon Technologies irg4bc20fpbf.pdf?fileId=5546d462533600a40153563f29032251 Description: IGBT 600V 16A TO-220AB
Current - Collector Pulsed (Icm): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 70µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 24ns/190ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 60 W
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IRFB41N15DPBF IRFB41N15DPBF Infineon Technologies irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16 description Description: MOSFET N-CH 150V 41A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG4BC10KDPBF IRG4BC10KDPBF Infineon Technologies IRG4BC10KDPbF.pdf Description: IGBT 600V 9A 38W TO220AB
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 250µJ (on), 140µJ (off)
Td (on/off) @ 25°C: 49ns/97ns
Supplier Device Package: TO-220AB
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IRL3502SPBF IRL3502SPBF Infineon Technologies IRL3502SPbF.pdf Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRF1404ZPBF IRF1404ZPBF Infineon Technologies IRSDS19311-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
3+146.46 грн
10+90.37 грн
100+61.08 грн
Мінімальне замовлення: 3 шт
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IRL2910PBF IRL2910PBF Infineon Technologies irl2910pbf.pdf?fileId=5546d462533600a40153565b9013250b description Description: MOSFET N-CH 100V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRFS4710PBF IRFS4710PBF Infineon Technologies irfb4710pbf.pdf?fileId=5546d462533600a4015356166c541e46 Description: MOSFET N-CH 100V 75A D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
IRG4BC20UPBF IRG4BC20UPBF Infineon Technologies IRG4BC20U.pdf description Description: IGBT 600V 13A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 100µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 21ns/86ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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IRG4BC20WPBF IRG4BC20WPBF Infineon Technologies Infineon-IRG4BC20W-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f8f5b226b Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
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В кошику  од. на суму  грн.
IRF1405ZLPBF IRF1405ZLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 558 шт:
термін постачання 21-31 дні (днів)
2+296.79 грн
50+145.94 грн
100+132.38 грн
500+101.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF1405ZPBF IRF1405ZPBF Infineon Technologies infineon-irf1405z-datasheet-en.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
2+294.46 грн
50+144.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
64-2092PBF 64-2092PBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRL1404LPBF IRL1404LPBF Infineon Technologies irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2 Description: MOSFET N-CH 40V 160A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
IRL2505PBF IRL2505PBF Infineon Technologies irl2505pbf.pdf?fileId=5546d462533600a40153565b6c032500 description Description: MOSFET N-CH 55V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRG4BC20W-SPBF IRG4BC20W-SPBF Infineon Technologies irg4bc20w-spbf.pdf?fileId=5546d462533600a40153563f9783226d Description: IGBT 600V 13A 60W D2PAK
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Gate Charge: 26 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 60µJ (on), 80µJ (off)
Td (on/off) @ 25°C: 22ns/110ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRG4BC15UDPBF IRG4BC15UDPBF Infineon Technologies irg4bc15udpbf.pdf?fileId=5546d462533600a40153563f0fa2224a Description: IGBT 600V 14A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
товару немає в наявності
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IRF1405PBF IRF1405PBF Infineon Technologies irf1405pbf.pdf?fileId=5546d462533600a4015355db084a18bb Description: MOSFET N-CH 55V 169A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
на замовлення 11275 шт:
термін постачання 21-31 дні (днів)
2+188.30 грн
50+89.13 грн
100+80.16 грн
500+60.44 грн
1000+55.69 грн
2000+51.70 грн
5000+46.60 грн
10000+45.30 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF1404PBF IRF1404PBF Infineon Technologies irf1404pbf.pdf?fileId=5546d462533600a4015355dae92618b0 Description: MOSFET N-CH 40V 202A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
2+167.38 грн
50+78.50 грн
100+70.43 грн
500+52.83 грн
1000+48.57 грн
2000+44.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL3103SPBF IRL3103SPBF Infineon Technologies irl3103spbf.pdf?fileId=5546d462533600a40153565bb8702516 Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRGB14C40LPBF IRGB14C40LPBF Infineon Technologies IRG%28S%2CSL%2914C40L%2C%20IRGB14C40LPbF.pdf description Description: IGBT 430V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
товару немає в наявності
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IRG4BH20K-LPBF IRG4BH20K-LPBF Infineon Technologies irg4bh20k-lpbf.pdf?fileId=5546d462533600a40153564356a822a5 description Description: IGBT 1200V 11A TO-262
Power - Max: 60 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 28 nC
Test Condition: 960V, 5A, 50Ohm, 15V
Switching Energy: 450µJ (on), 440µJ (off)
Td (on/off) @ 25°C: 23ns/93ns
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRFB31N20DPBF IRFB31N20DPBF Infineon Technologies irfb31n20dpbf.pdf?fileId=5546d462533600a40153561547951df1 Description: MOSFET N-CH 200V 31A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS31N20DPBF IRFS31N20DPBF Infineon Technologies irfb31n20dpbf.pdf?fileId=5546d462533600a40153561547951df1 Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFI1010NPBF IRFI1010NPBF Infineon Technologies IRFI1010NPbF.pdf Description: MOSFET N-CH 55V 49A TO220AB FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.
IRF1010NSPBF IRF1010NSPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 description Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFI1310NPBF IRFI1310NPBF Infineon Technologies irfi1310npbf.pdf?fileId=5546d462533600a401535623bd4b1f69 Description: MOSFET N-CH 100V 24A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 3603 шт:
термін постачання 21-31 дні (днів)
2+208.45 грн
50+98.47 грн
100+88.52 грн
500+66.68 грн
1000+61.41 грн
2000+56.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL1004PBF IRL1004PBF Infineon Technologies irl1004pbf.pdf?fileId=5546d462533600a40153565b184224e4 Description: MOSFET N-CH 40V 130A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+289.04 грн
50+142.20 грн
100+129.03 грн
500+99.43 грн
1000+92.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRG4BC20SDPBF IRG4BC20SDPBF Infineon Technologies irg4bc20sdpbf.pdf?fileId=5546d462533600a40153563f5de2225f description Description: IGBT 600V 19A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 10A, 50Ohm, 15V
Switching Energy: 320µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 62ns/690ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRFS41N15DPBF IRFS41N15DPBF Infineon Technologies irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16 Description: MOSFET N-CH 150V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
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IR2183PBF IR2183PBF Infineon Technologies infineon-ir2183-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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IRL3103D1PBF IRL3103D1PBF Infineon Technologies irl3103d1pbf.pdf Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IR2184PBF IR2184PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
2+272.77 грн
10+198.34 грн
50+172.63 грн
100+154.52 грн
250+146.61 грн
500+141.85 грн
1000+135.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL3705NPBF IRL3705NPBF Infineon Technologies irl3705npbf.pdf?fileId=5546d462533600a40153565f31232534 description Description: MOSFET N-CH 55V 89A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 2379 шт:
термін постачання 21-31 дні (днів)
3+154.21 грн
10+95.07 грн
100+64.44 грн
500+48.16 грн
1000+44.20 грн
2000+40.87 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL1004SPBF IRL1004SPBF Infineon Technologies irl1004spbf.pdf?fileId=5546d462533600a40153565b1f5b24e6 Description: MOSFET N-CH 40V 130A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRG4BC30S-SPBF IRG4BC30S-SPBF Infineon Technologies IRG4BC30S-SPbF.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRG4BC30U-SPBF IRG4BC30U-SPBF Infineon Technologies IRG4BC30U-SPbF.pdf Description: IGBT 600V 23A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 480V, 12A, 23Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 17ns/78ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRG4BC30K-SPBF IRG4BC30K-SPBF Infineon Technologies IRG4BC30K-S.pdf description Description: IGBT 600V 28A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 67 nC
Test Condition: 480V, 16A, 23Ohm, 15V
Switching Energy: 360µJ (on), 510µJ (off)
Td (on/off) @ 25°C: 26ns/130ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRF1607PBF IRF1607PBF Infineon Technologies IRF1607PbF.pdf Description: MOSFET N-CH 75V 142A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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IRF2807SPBF IRF2807SPBF Infineon Technologies irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4 description Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IRLI2203NPBF IRLI2203NPBF Infineon Technologies IRLI2203NPbF.pdf Description: MOSFET N-CH 30V 61A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 500 шт
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IRG4BC20KDPBF IRG4BC20KDPBF Infineon Technologies IRG4BC20KDPbF.pdf Description: IGBT 600V 16A TO-220AB
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
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IRG4IBC20KDPBF IRG4IBC20KDPBF Infineon Technologies irg4ibc20kdpbf.pdf?fileId=5546d462533600a401535643777122ad Description: IGBT 600V 11.5A TO220AB FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11.5 A
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRG4BC20UD-SPBF IRG4BC20UD-SPBF Infineon Technologies irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267 Description: IGBT 600V 13A 60W D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 160µJ (on), 130µJ (off)
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IRF4104SPBF description irf4104pbf.pdf?fileId=5546d462533600a4015355e3193d1979
IRF4104SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRFS17N20DPBF irfb17n20dpbf.pdf
IRFS17N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IRG4BC10UDPBF irg4bc10udpbf.pdf?fileId=5546d462533600a40153563f006c2246
IRG4BC10UDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W TO220AB
Power - Max: 38 W
Current - Collector Pulsed (Icm): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8.5 A
Part Status: Obsolete
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 140µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 40ns/87ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge: 15 nC
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IRFB4215PBF IRFB4215PbF.pdf
IRFB4215PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 115A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 54A, 10V
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG4BC10UPBF IRG4BC10UDPbF.pdf
IRG4BC10UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W TO220AB
Power - Max: 38 W
Current - Collector Pulsed (Icm): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8.5 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 140µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 40ns/87ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRF3315LPBF irf3315spbf.pdf
IRF3315LPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO262
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 400 шт
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IRFS33N15DPBF irfs33n15dpbf.pdf?fileId=5546d462533600a4015356369887216f
IRFS33N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
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IRL1104SPBF IRL1104(S,L)PbF.pdf
IRL1104SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 104A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRL1104PBF IRL1104PbF.pdf
IRL1104PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRL1104LPBF IRL1104(S,L)PbF.pdf
IRL1104LPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 104A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3445 pF @ 25 V
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IRFS23N20DPBF irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFS23N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товару немає в наявності
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IRF4905PBF irf4905pbf.pdf?fileId=5546d462533600a4015355e329b1197e
IRF4905PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 74A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 41976 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+227.82 грн
50+109.13 грн
100+98.42 грн
500+74.77 грн
1000+69.11 грн
2000+66.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF3415PBF irf3415pbf.pdf?fileId=5546d462533600a4015355df20e21919
IRF3415PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 2303 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+176.68 грн
10+109.17 грн
100+74.52 грн
500+56.03 грн
1000+51.56 грн
2000+47.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLI3705NPBF irli3705npbf.pdf?fileId=5546d462533600a401535663deb625b9
IRLI3705NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 52A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IRF5210PBF irf5210pbf.pdf?fileId=5546d462533600a4015355e3576b198b
IRF5210PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 24A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 12011 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+271.99 грн
50+132.97 грн
100+120.40 грн
500+92.34 грн
1000+85.70 грн
2000+80.13 грн
5000+74.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL3502PBF IRL3502PbF.pdf
IRL3502PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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IRG4BC20KPBF IRG4BC20KPbF.pdf
IRG4BC20KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 150µJ (on), 250µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
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IRG4BC20FPBF irg4bc20fpbf.pdf?fileId=5546d462533600a40153563f29032251
IRG4BC20FPBF
Виробник: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Current - Collector Pulsed (Icm): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 70µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 24ns/190ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 60 W
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В кошику  од. на суму  грн.
IRFB41N15DPBF description irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16
IRFB41N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 41A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRG4BC10KDPBF IRG4BC10KDPbF.pdf
IRG4BC10KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 9A 38W TO220AB
Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9 A
Part Status: Obsolete
Gate Charge: 19 nC
Test Condition: 480V, 5A, 100Ohm, 15V
Switching Energy: 250µJ (on), 140µJ (off)
Td (on/off) @ 25°C: 49ns/97ns
Supplier Device Package: TO-220AB
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IRL3502SPBF IRL3502SPbF.pdf
IRL3502SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRF1404ZPBF IRSDS19311-1.pdf?t.download=true&u=5oefqw
IRF1404ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+146.46 грн
10+90.37 грн
100+61.08 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL2910PBF description irl2910pbf.pdf?fileId=5546d462533600a40153565b9013250b
IRL2910PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRFS4710PBF irfb4710pbf.pdf?fileId=5546d462533600a4015356166c541e46
IRFS4710PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 75A D2PAK
товару немає в наявності
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IRG4BC20UPBF description IRG4BC20U.pdf
IRG4BC20UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 100µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 21ns/86ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
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IRG4BC20WPBF Infineon-IRG4BC20W-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f8f5b226b
IRG4BC20WPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
товару немає в наявності
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IRF1405ZLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 558 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+296.79 грн
50+145.94 грн
100+132.38 грн
500+101.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF1405ZPBF infineon-irf1405z-datasheet-en.pdf
IRF1405ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+294.46 грн
50+144.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
64-2092PBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
64-2092PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRL1404LPBF irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2
IRL1404LPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
IRL2505PBF description irl2505pbf.pdf?fileId=5546d462533600a40153565b6c032500
IRL2505PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 104A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRG4BC20W-SPBF irg4bc20w-spbf.pdf?fileId=5546d462533600a40153563f9783226d
IRG4BC20W-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A 60W D2PAK
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Gate Charge: 26 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 60µJ (on), 80µJ (off)
Td (on/off) @ 25°C: 22ns/110ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
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IRG4BC15UDPBF irg4bc15udpbf.pdf?fileId=5546d462533600a40153563f0fa2224a
IRG4BC15UDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 14A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
товару немає в наявності
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IRF1405PBF irf1405pbf.pdf?fileId=5546d462533600a4015355db084a18bb
IRF1405PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 169A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
на замовлення 11275 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+188.30 грн
50+89.13 грн
100+80.16 грн
500+60.44 грн
1000+55.69 грн
2000+51.70 грн
5000+46.60 грн
10000+45.30 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF1404PBF irf1404pbf.pdf?fileId=5546d462533600a4015355dae92618b0
IRF1404PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 202A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+167.38 грн
50+78.50 грн
100+70.43 грн
500+52.83 грн
1000+48.57 грн
2000+44.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL3103SPBF irl3103spbf.pdf?fileId=5546d462533600a40153565bb8702516
IRL3103SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
товару немає в наявності
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IRGB14C40LPBF description IRG%28S%2CSL%2914C40L%2C%20IRGB14C40LPbF.pdf
IRGB14C40LPBF
Виробник: Infineon Technologies
Description: IGBT 430V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
товару немає в наявності
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IRG4BH20K-LPBF description irg4bh20k-lpbf.pdf?fileId=5546d462533600a40153564356a822a5
IRG4BH20K-LPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO-262
Power - Max: 60 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 28 nC
Test Condition: 960V, 5A, 50Ohm, 15V
Switching Energy: 450µJ (on), 440µJ (off)
Td (on/off) @ 25°C: 23ns/93ns
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRFB31N20DPBF irfb31n20dpbf.pdf?fileId=5546d462533600a40153561547951df1
IRFB31N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 31A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
товару немає в наявності
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IRFS31N20DPBF irfb31n20dpbf.pdf?fileId=5546d462533600a40153561547951df1
IRFS31N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V
Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 25 V
товару немає в наявності
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IRFI1010NPBF IRFI1010NPbF.pdf
IRFI1010NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB FP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
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IRF1010NSPBF description Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFI1310NPBF irfi1310npbf.pdf?fileId=5546d462533600a401535623bd4b1f69
IRFI1310NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 24A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
на замовлення 3603 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+208.45 грн
50+98.47 грн
100+88.52 грн
500+66.68 грн
1000+61.41 грн
2000+56.98 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL1004PBF irl1004pbf.pdf?fileId=5546d462533600a40153565b184224e4
IRL1004PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 130A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+289.04 грн
50+142.20 грн
100+129.03 грн
500+99.43 грн
1000+92.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRG4BC20SDPBF description irg4bc20sdpbf.pdf?fileId=5546d462533600a40153563f5de2225f
IRG4BC20SDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 19A TO-220AB
Power - Max: 60 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 10A, 50Ohm, 15V
Switching Energy: 320µJ (on), 2.58mJ (off)
Td (on/off) @ 25°C: 62ns/690ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRFS41N15DPBF irfb41n15dpbf.pdf?fileId=5546d462533600a401535615d3b61e16
IRFS41N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 25 V
товару немає в наявності
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IR2183PBF infineon-ir2183-datasheet-en.pdf
IR2183PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRL3103D1PBF irl3103d1pbf.pdf
IRL3103D1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IR2184PBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR2184PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1074 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+272.77 грн
10+198.34 грн
50+172.63 грн
100+154.52 грн
250+146.61 грн
500+141.85 грн
1000+135.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRL3705NPBF description irl3705npbf.pdf?fileId=5546d462533600a40153565f31232534
IRL3705NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 89A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 2379 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+154.21 грн
10+95.07 грн
100+64.44 грн
500+48.16 грн
1000+44.20 грн
2000+40.87 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRL1004SPBF irl1004spbf.pdf?fileId=5546d462533600a40153565b1f5b24e6
IRL1004SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 130A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
товару немає в наявності
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IRG4BC30S-SPBF IRG4BC30S-SPbF.pdf
IRG4BC30S-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRG4BC30U-SPBF IRG4BC30U-SPbF.pdf
IRG4BC30U-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 23 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 480V, 12A, 23Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 17ns/78ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRG4BC30K-SPBF description IRG4BC30K-S.pdf
IRG4BC30K-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A 100W D2PAK
Power - Max: 100 W
Current - Collector Pulsed (Icm): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 67 nC
Test Condition: 480V, 16A, 23Ohm, 15V
Switching Energy: 360µJ (on), 510µJ (off)
Td (on/off) @ 25°C: 26ns/130ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRF1607PBF IRF1607PbF.pdf
IRF1607PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 142A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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IRF2807SPBF description irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4
IRF2807SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IRLI2203NPBF IRLI2203NPbF.pdf
IRLI2203NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 61A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Мінімальне замовлення: 500 шт
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IRG4BC20KDPBF IRG4BC20KDPbF.pdf
IRG4BC20KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 16A TO-220AB
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
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IRG4IBC20KDPBF irg4ibc20kdpbf.pdf?fileId=5546d462533600a401535643777122ad
IRG4IBC20KDPBF
Виробник: Infineon Technologies
Description: IGBT 600V 11.5A TO220AB FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 11.5 A
Part Status: Obsolete
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRG4BC20UD-SPBF irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267
IRG4BC20UD-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A 60W D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 13 A
Part Status: Obsolete
Gate Charge: 27 nC
Test Condition: 480V, 6.5A, 50Ohm, 15V
Switching Energy: 160µJ (on), 130µJ (off)
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