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NCV8502PDW33R2G NCV8502PDW33R2G onsemi ncv8502-d.pdf Description: IC REG LINEAR 3.3V 150MA 16SOIC
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NCV8502PDW50R2G NCV8502PDW50R2G onsemi ncv8502-d.pdf Description: IC REG LINEAR 5V 150MA 16SOIC
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NCV8502PDW80R2G NCV8502PDW80R2G onsemi ncv8502-d.pdf Description: IC REG LINEAR 8V 150MA 16SOIC
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NGB18N40CLBT4G NGB18N40CLBT4G onsemi NGB18N40CLBT4-D.pdf Description: IGBT 430V 18A 115W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NGP15N41CLG NGP15N41CLG onsemi NGD_NGB_NGP15N41CL_ACL.pdf Description: IGBT 440V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 6.5A, 1kOhm
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 107 W
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NL17SV08XV5T2G NL17SV08XV5T2G onsemi nl17sv08-d.pdf Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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NL27WZ04DTT1G NL27WZ04DTT1G onsemi nl27wz04-d.pdf Description: IC INVERTER 2CH 2-INP 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ06DFT2G NL27WZ06DFT2G onsemi nl27wz06-d.pdf Description: IC INVERTER 2CH 2-INP SC88
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 2
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 3ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
3000+3.34 грн
6000+2.86 грн
9000+2.68 грн
15000+2.32 грн
21000+2.21 грн
30000+2.10 грн
75000+1.82 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ07DTT1G NL27WZ07DTT1G onsemi nl27wz07-d.pdf Description: IC BUFFER NON-INVERT 5.5V 6TSOP
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+8.75 грн
6000+7.91 грн
15000+7.40 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ14DTT1G NL27WZ14DTT1G onsemi nl27wz14-d.pdf Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.8V ~ 3.6V
Input Logic Level - Low: 0.4V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NL27WZ16DFT2G NL27WZ16DFT2G onsemi nl27wz16-d.pdf Description: IC BUFFER NON-INVERT 5.5V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+3.23 грн
6000+2.77 грн
9000+2.59 грн
15000+2.24 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ16DTT1G NL27WZ16DTT1G onsemi nl27wz16-d.pdf Description: IC BUFFER NON-INVERT 5.5V 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 6-TSOP
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+7.62 грн
6000+6.86 грн
15000+6.30 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZU04DFT2G NL27WZU04DFT2G onsemi nl27wzu04-d.pdf Description: IC INVERTER 2CH 2-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 2
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+1.68 грн
6000+1.56 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZU04DTT1G NL27WZU04DTT1G onsemi nl27wzu04-d.pdf Description: IC INVERTER 2CH 2-INP 6TSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Supplier Device Package: 6-TSOP
Number of Inputs: 2
Current - Output High, Low: 16mA, 16mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.68 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL7SZ18DFT2G NL7SZ18DFT2G onsemi nl7sz18-d.pdf Description: IC DEMUX 1 X 1:2 SC88/SC70-6
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.47 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NLAS44599MNG NLAS44599MNG onsemi nlas44599-d.pdf Description: IC SWITCH DPDT X 2 25OHM 16QFN
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tube
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10µA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 5ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -90dB @ 100kHz
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 175MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
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NLAS4599DTT1G NLAS4599DTT1G onsemi nlas4599-d.pdf Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 220MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NLAST4599DTT1G NLAST4599DTT1G onsemi nlast4599-d.pdf Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 200MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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NSB1706DMW5T1G NSB1706DMW5T1G onsemi nsb1706dmw5t1-d.pdf Description: TRANS PREBIAS 2NPN 50V SC-88A
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+4.07 грн
6000+3.52 грн
9000+3.32 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSBA114EDXV6T5G NSBA114EDXV6T5G onsemi NSBA114EDXV6-D.pdf Description: TRANS 2PNP PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NSBA114YDXV6T1G NSBA114YDXV6T1G onsemi dta114yd-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT563
Part Status: Active
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
4000+9.03 грн
8000+8.21 грн
12000+7.49 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC114EDXV6T5G NSBC114EDXV6T5G onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
 Мінімальне замовлення: 8000 шт
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NSBC114TDXV6T5G NSBC114TDXV6T5G onsemi dtc114td-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
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NSBC123JPDXV6T5G NSBC123JPDXV6T5G onsemi dtc123jp-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NSBC124XDXV6T1G NSBC124XDXV6T1G onsemi dtc124xd-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC144EDXV6T5G NSBC144EDXV6T5G onsemi dtc144ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NSBC144EPDXV6T5G NSBC144EPDXV6T5G onsemi dtc144ep-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
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NSL12AWT1G NSL12AWT1G onsemi nsl12aw-d.pdf Description: TRANS PNP 12V 2A SC88/SC70-6
Power - Max: 450 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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NSQA6V8AW5T2G NSQA6V8AW5T2G onsemi nsqa6v8aw5t2-d.pdf Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
3000+12.16 грн
6000+10.73 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSR0320XV6T5G NSR0320XV6T5G onsemi nsr0320xv6t1-d.pdf Description: DIODE SCHOTTKY 23V 1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-563
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 23 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
товару немає в наявності
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NST3946DXV6T5G NST3946DXV6T5G onsemi nst3946dxv6t1-d.pdf Description: TRANS NPN/PNP 40V 200MA SOT-563
Part Status: Obsolete
Supplier Device Package: SOT-563
Frequency - Transition: 300MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NTB13N10T4G NTB13N10T4G onsemi ntb13n10-d.pdf Description: MOSFET N-CH 100V 13A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64.7W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
товару немає в наявності
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NTB18N06LT4G NTB18N06LT4G onsemi ntp18n06l-d.pdf Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товару немає в наявності
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NTB18N06T4G NTB18N06T4G onsemi ntp18n06-d.pdf Description: MOSFET N-CH 60V 15A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
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NTB23N03RT4G NTB23N03RT4G onsemi ntb23n03r-d.pdf Description: MOSFET N-CH 25V 23A D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
NTB25P06T4G NTB25P06T4G onsemi ntb25p06-d.pdf Description: MOSFET P-CH 60V 27.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+71.61 грн
1600+64.08 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB30N06LT4G NTB30N06LT4G onsemi ntp30n06l-d.pdf Description: MOSFET N-CH 60V 30A D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB30N20T4G NTB30N20T4G onsemi ntb30n20-d.pdf Description: MOSFET N-CH 200V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB45N06LT4G NTB45N06LT4G onsemi ntp45n06l-d.pdf Description: MOSFET N-CH 60V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTB45N06T4G NTB45N06T4G onsemi ntb45n06-d.pdf Description: MOSFET N-CH 60V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTB60N06LT4G NTB60N06LT4G onsemi ntp60n06l-d.pdf Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB60N06T4G NTB60N06T4G onsemi ntb60n06-d.pdf Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
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В кошику  од. на суму  грн.
NTB75N03L09T4G NTB75N03L09T4G onsemi ntp75n03l09-d.pdf Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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NTB75N03RT4G NTB75N03RT4G onsemi ntb75n03r-d.pdf Description: MOSFET N-CH 25V 9.7A/75A D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
NTB75N06T4G NTB75N06T4G onsemi ntb75n06-d.pdf Description: MOSFET N-CH 60V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTD18N06LT4G NTD18N06LT4G onsemi ntd18n06l-d.pdf Description: MOSFET N-CH 60V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+31.68 грн
5000+28.37 грн
7500+27.48 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD18N06T4G NTD18N06T4G onsemi ntd18n06-d.pdf Description: MOSFET N-CH 60V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD20N03L27T4G NTD20N03L27T4G onsemi NTD20N03L27%2CNVD20N03L27.pdf Description: MOSFET N-CH 30V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4188 шт:
термін постачання 21-31 дні (днів)
3+110.76 грн
10+67.73 грн
100+45.22 грн
500+33.39 грн
1000+30.48 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD20N06T4G NTD20N06T4G onsemi ntd20n06-d.pdf Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+43.89 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD20P06LT4G NTD20P06LT4G onsemi ntd20p06l-d.pdf Description: MOSFET P-CH 60V 15.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
на замовлення 8689 шт:
термін постачання 21-31 дні (днів)
3+110.76 грн
10+67.81 грн
100+45.32 грн
500+33.49 грн
1000+30.58 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD24N06T4G NTD24N06T4G onsemi ntd24n06-d.pdf Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
товару немає в наявності
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NTD25P03L1G NTD25P03L1G onsemi ntd25p03l-d.pdf Description: MOSFET P-CH 30V 25A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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NTD2955T4G NTD2955T4G onsemi ntd2955-d.pdf Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 55W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 53727 шт:
термін постачання 21-31 дні (днів)
3+128.17 грн
10+78.55 грн
100+52.71 грн
500+39.07 грн
1000+35.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD3055-094T4G NTD3055-094T4G onsemi ntd3055-094-d.pdf Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 6A, 10V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 24931 шт:
термін постачання 21-31 дні (днів)
4+98.10 грн
10+59.50 грн
100+39.39 грн
500+28.86 грн
1000+26.26 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NTD3055-150T4G NTD3055-150T4G onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+25.05 грн
5000+22.33 грн
7500+21.42 грн
12500+19.47 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD3055L104T4G NTD3055L104T4G onsemi ntd3055l104-d.pdf Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 24523 шт:
термін постачання 21-31 дні (днів)
3+114.72 грн
10+70.09 грн
100+46.76 грн
500+34.50 грн
1000+31.48 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD3055L170T4G NTD3055L170T4G onsemi ntd3055l170-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Qualification: AEC-Q101
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NTD32N06LT4G NTD32N06LT4G onsemi ntd32n06l-d.pdf Description: MOSFET N-CH 60V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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NTD32N06T4G NTD32N06T4G onsemi ntd32n06-d.pdf Description: MOSFET N-CH 60V 32A DPAK
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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NTD4302T4G NTD4302T4G onsemi ntd4302-d.pdf Description: MOSFET N-CH 30V 8.4A/68A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NCV8502PDW33R2G ncv8502-d.pdf
NCV8502PDW33R2G
Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 16SOIC
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NCV8502PDW50R2G ncv8502-d.pdf
NCV8502PDW50R2G
Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 16SOIC
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NCV8502PDW80R2G ncv8502-d.pdf
NCV8502PDW80R2G
Виробник: onsemi
Description: IC REG LINEAR 8V 150MA 16SOIC
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NGB18N40CLBT4G NGB18N40CLBT4-D.pdf
NGB18N40CLBT4G
Виробник: onsemi
Description: IGBT 430V 18A 115W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NGP15N41CLG NGD_NGB_NGP15N41CL_ACL.pdf
NGP15N41CLG
Виробник: onsemi
Description: IGBT 440V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.2V @ 4V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 6.5A, 1kOhm
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 107 W
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NL17SV08XV5T2G nl17sv08-d.pdf
NL17SV08XV5T2G
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 2.3ns @ 3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 900 nA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NL27WZ04DTT1G nl27wz04-d.pdf
NL27WZ04DTT1G
Виробник: onsemi
Description: IC INVERTER 2CH 2-INP 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ06DFT2G nl27wz06-d.pdf
NL27WZ06DFT2G
Виробник: onsemi
Description: IC INVERTER 2CH 2-INP SC88
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 2
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 3ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+3.34 грн
6000+2.86 грн
9000+2.68 грн
15000+2.32 грн
21000+2.21 грн
30000+2.10 грн
75000+1.82 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ07DTT1G nl27wz07-d.pdf
NL27WZ07DTT1G
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6TSOP
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+8.75 грн
6000+7.91 грн
15000+7.40 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ14DTT1G nl27wz14-d.pdf
NL27WZ14DTT1G
Виробник: onsemi
Description: IC INVERT SCHMITT 2CH 2INP 6TSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSOP
Input Logic Level - High: 1.8V ~ 3.6V
Input Logic Level - Low: 0.4V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ16DFT2G nl27wz16-d.pdf
NL27WZ16DFT2G
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+3.23 грн
6000+2.77 грн
9000+2.59 грн
15000+2.24 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZ16DTT1G nl27wz16-d.pdf
NL27WZ16DTT1G
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 6-TSOP
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+7.62 грн
6000+6.86 грн
15000+6.30 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZU04DFT2G nl27wzu04-d.pdf
NL27WZU04DFT2G
Виробник: onsemi
Description: IC INVERTER 2CH 2-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 2
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+1.68 грн
6000+1.56 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL27WZU04DTT1G nl27wzu04-d.pdf
NL27WZU04DTT1G
Виробник: onsemi
Description: IC INVERTER 2CH 2-INP 6TSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 5.6ns @ 5V, 50pF
Supplier Device Package: 6-TSOP
Number of Inputs: 2
Current - Output High, Low: 16mA, 16mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+7.68 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NL7SZ18DFT2G nl7sz18-d.pdf
NL7SZ18DFT2G
Виробник: onsemi
Description: IC DEMUX 1 X 1:2 SC88/SC70-6
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Demultiplexer
Circuit: 1 x 1:2
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+3.47 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NLAS44599MNG nlas44599-d.pdf
NLAS44599MNG
Виробник: onsemi
Description: IC SWITCH DPDT X 2 25OHM 16QFN
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tube
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10µA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 5ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -90dB @ 100kHz
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 175MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
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NLAS4599DTT1G nlas4599-d.pdf
NLAS4599DTT1G
Виробник: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 220MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NLAST4599DTT1G nlast4599-d.pdf
NLAST4599DTT1G
Виробник: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 200MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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NSB1706DMW5T1G nsb1706dmw5t1-d.pdf
NSB1706DMW5T1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SC-88A
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+4.07 грн
6000+3.52 грн
9000+3.32 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSBA114EDXV6T5G NSBA114EDXV6-D.pdf
NSBA114EDXV6T5G
Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NSBA114YDXV6T1G dta114yd-d.pdf
NSBA114YDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563
Part Status: Active
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4000+9.03 грн
8000+8.21 грн
12000+7.49 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC114EDXV6T5G dtc114ed-d.pdf
NSBC114EDXV6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSBC114TDXV6T5G dtc114td-d.pdf
NSBC114TDXV6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
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NSBC123JPDXV6T5G dtc123jp-d.pdf
NSBC123JPDXV6T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NSBC124XDXV6T1G dtc124xd-d.pdf
NSBC124XDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC144EDXV6T5G dtc144ed-d.pdf
NSBC144EDXV6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NSBC144EPDXV6T5G dtc144ep-d.pdf
NSBC144EPDXV6T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
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NSL12AWT1G nsl12aw-d.pdf
NSL12AWT1G
Виробник: onsemi
Description: TRANS PNP 12V 2A SC88/SC70-6
Power - Max: 450 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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NSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
NSQA6V8AW5T2G
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+12.16 грн
6000+10.73 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSR0320XV6T5G nsr0320xv6t1-d.pdf
NSR0320XV6T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 23V 1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-563
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 23 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
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NST3946DXV6T5G nst3946dxv6t1-d.pdf
NST3946DXV6T5G
Виробник: onsemi
Description: TRANS NPN/PNP 40V 200MA SOT-563
Part Status: Obsolete
Supplier Device Package: SOT-563
Frequency - Transition: 300MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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NTB13N10T4G ntb13n10-d.pdf
NTB13N10T4G
Виробник: onsemi
Description: MOSFET N-CH 100V 13A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64.7W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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NTB18N06LT4G ntp18n06l-d.pdf
NTB18N06LT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V
Power Dissipation (Max): 48.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
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NTB18N06T4G ntp18n06-d.pdf
NTB18N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 15A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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NTB23N03RT4G ntb23n03r-d.pdf
NTB23N03RT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 23A D2PAK
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NTB25P06T4G ntb25p06-d.pdf
NTB25P06T4G
Виробник: onsemi
Description: MOSFET P-CH 60V 27.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
800+71.61 грн
1600+64.08 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB30N06LT4G ntp30n06l-d.pdf
NTB30N06LT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 30A D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB30N20T4G ntb30n20-d.pdf
NTB30N20T4G
Виробник: onsemi
Description: MOSFET N-CH 200V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB45N06LT4G ntp45n06l-d.pdf
NTB45N06LT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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NTB45N06T4G ntb45n06-d.pdf
NTB45N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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NTB60N06LT4G ntp60n06l-d.pdf
NTB60N06LT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NTB60N06T4G ntb60n06-d.pdf
NTB60N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
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NTB75N03L09T4G ntp75n03l09-d.pdf
NTB75N03L09T4G
Виробник: onsemi
Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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NTB75N03RT4G ntb75n03r-d.pdf
NTB75N03RT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 9.7A/75A D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1333 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
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NTB75N06T4G ntb75n06-d.pdf
NTB75N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
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NTD18N06LT4G ntd18n06l-d.pdf
NTD18N06LT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2500+31.68 грн
5000+28.37 грн
7500+27.48 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD18N06T4G ntd18n06-d.pdf
NTD18N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 18A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD20N03L27T4G NTD20N03L27%2CNVD20N03L27.pdf
NTD20N03L27T4G
Виробник: onsemi
Description: MOSFET N-CH 30V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 4188 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+110.76 грн
10+67.73 грн
100+45.22 грн
500+33.39 грн
1000+30.48 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD20N06T4G ntd20n06-d.pdf
NTD20N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2500+43.89 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD20P06LT4G ntd20p06l-d.pdf
NTD20P06LT4G
Виробник: onsemi
Description: MOSFET P-CH 60V 15.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
на замовлення 8689 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+110.76 грн
10+67.81 грн
100+45.32 грн
500+33.49 грн
1000+30.58 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD24N06T4G ntd24n06-d.pdf
NTD24N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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NTD25P03L1G ntd25p03l-d.pdf
NTD25P03L1G
Виробник: onsemi
Description: MOSFET P-CH 30V 25A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 75W (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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NTD2955T4G ntd2955-d.pdf
NTD2955T4G
Виробник: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 55W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
на замовлення 53727 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+128.17 грн
10+78.55 грн
100+52.71 грн
500+39.07 грн
1000+35.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD3055-094T4G ntd3055-094-d.pdf
NTD3055-094T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 6A, 10V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 24931 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+98.10 грн
10+59.50 грн
100+39.39 грн
500+28.86 грн
1000+26.26 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NTD3055-150T4G ntd3055-150-d.pdf
NTD3055-150T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2500+25.05 грн
5000+22.33 грн
7500+21.42 грн
12500+19.47 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD3055L104T4G ntd3055l104-d.pdf
NTD3055L104T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 24523 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3+114.72 грн
10+70.09 грн
100+46.76 грн
500+34.50 грн
1000+31.48 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
NTD3055L170T4G ntd3055l170-d.pdf
NTD3055L170T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Qualification: AEC-Q101
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NTD32N06LT4G ntd32n06l-d.pdf
NTD32N06LT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NTD32N06T4G ntd32n06-d.pdf
NTD32N06T4G
Виробник: onsemi
Description: MOSFET N-CH 60V 32A DPAK
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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NTD4302T4G ntd4302-d.pdf
NTD4302T4G
Виробник: onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
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