| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMBD1401 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 2724 шт: термін постачання 21-30 дні (днів) |
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MMBD1403 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: double series Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1404 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 834 шт: термін постачання 21-30 дні (днів) |
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MMBD1404A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Max. forward voltage: 1.25V Max. forward impulse current: 2A Max. off-state voltage: 175V Kind of package: reel; tape Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.6A Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD1405 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 2pF Reverse recovery time: 50ns Leakage current: 0.1µA Load current: 0.2A Power dissipation: 0.35W |
на замовлення 2728 шт: термін постачання 21-30 дні (днів) |
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2N3904BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 4866 шт: термін постачання 21-30 дні (днів) |
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2N3904TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 771 шт: термін постачання 21-30 дні (днів) |
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BSS138L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 11319 шт: термін постачання 21-30 дні (днів) |
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BSS138LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 16797 шт: термін постачання 21-30 дні (днів) |
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BSS138LT3G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 8482 шт: термін постачання 21-30 дні (днів) |
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BSS138W | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.21A Power dissipation: 0.34W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 5.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2759 шт: термін постачання 21-30 дні (днів) |
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MMBFJ113 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA Kind of package: reel; tape Type of transistor: N-JFET Mounting: SMD Case: SOT23 Polarisation: unipolar Gate-source voltage: -35V Drain current: 2mA Gate current: 50mA Power dissipation: 0.35W On-state resistance: 100Ω |
на замовлення 2955 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Leakage current: 50µA Kind of package: reel; tape Power dissipation: 0.5W |
на замовлення 9341 шт: термін постачання 21-30 дні (днів) |
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LM2904DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
на замовлення 7472 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Power dissipation: 116W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 180nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Power dissipation: 116W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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| FGAF40N60UFDTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 150nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 160A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC78LC33NTRG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 53mV Output voltage: 3.3V Output current: 80mA Case: TSOT23-5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 4.3...12V |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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BCP53-10T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 1253 шт: термін постачання 21-30 дні (днів) |
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BCP53-16T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 1064 шт: термін постачання 21-30 дні (днів) |
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LM2574DW-ADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: SO16-W Mounting: SMD Topology: buck Number of channels: 1 Kind of package: reel; tape |
на замовлення 791 шт: термін постачання 21-30 дні (днів) |
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LM2574N-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 654 шт: термін постачання 21-30 дні (днів) |
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BC856BDW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 6649 шт: термін постачання 21-30 дні (днів) |
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BC856BDW1T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BLT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BLT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC856BM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265W Case: SOT723 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1981 шт: термін постачання 21-30 дні (днів) |
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MMBT2222ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 55846 шт: термін постачання 21-30 дні (днів) |
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MMBT2222ALT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222ATT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 2578 шт: термін постачання 21-30 дні (днів) |
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MMBT2222AWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 6639 шт: термін постачання 21-30 дні (днів) |
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MMBT2222AWT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5408RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA Mounting: THT Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: reel; tape Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 1798 шт: термін постачання 21-30 дні (днів) |
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FOD3120 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 35kV/μs |
на замовлення 622 шт: термін постачання 21-30 дні (днів) |
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FOD3120SD | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5kV Case: Gull wing 8 Slew rate: 35kV/μs |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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FOD3120SDV | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: IGBT driver Insulation voltage: 5kV Case: Gull wing 8 Slew rate: 35kV/μs Turn-on time: 60ns Turn-off time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC132DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of gate: NAND Kind of input: with Schmitt trigger Family: AC Number of inputs: 2 Kind of package: tube |
на замовлення 379 шт: термін постачання 21-30 дні (днів) |
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BCP56-16T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
на замовлення 8684 шт: термін постачання 21-30 дні (днів) |
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BCP56-16T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
на замовлення 2720 шт: термін постачання 21-30 дні (днів) |
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SBCP56-16T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002K | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.27A Pulsed drain current: 5A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 4423 шт: термін постачання 21-30 дні (днів) |
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2N7002KT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2979 шт: термін постачання 21-30 дні (днів) |
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2N7002KW | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Power dissipation: 0.3W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A Version: ESD |
на замовлення 2918 шт: термін постачання 21-30 дні (днів) |
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1N4742A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
на замовлення 465 шт: термін постачання 21-30 дні (днів) |
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1N4742ATR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
на замовлення 991 шт: термін постачання 21-30 дні (днів) |
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FOD817B | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Mounting: THT Kind of output: transistor Turn-off time: 4µs Turn-on time: 4µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 130-260%@5mA Insulation voltage: 5kV Case: DIP4 Manufacturer series: FOD817 Type of optocoupler: optocoupler |
на замовлення 1954 шт: термін постачання 21-30 дні (днів) |
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FOD817B300 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Mounting: THT Kind of output: transistor Turn-off time: 4µs Turn-on time: 4µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 130-260%@5mA Insulation voltage: 5kV Case: DIP4 Manufacturer series: FOD817 Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD817B3SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Mounting: SMD Kind of output: transistor Turn-off time: 4µs Turn-on time: 4µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 130-260%@5mA Insulation voltage: 5kV Case: SO4 Manufacturer series: FOD817 Type of optocoupler: optocoupler |
на замовлення 1808 шт: термін постачання 21-30 дні (днів) |
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FOD817BS | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Mounting: SMD Kind of output: transistor Turn-off time: 4µs Turn-on time: 4µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 130-260%@5mA Insulation voltage: 5kV Case: SO4 Manufacturer series: FOD817 Type of optocoupler: optocoupler |
на замовлення 3560 шт: термін постачання 21-30 дні (днів) |
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FOD817BSD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Mounting: SMD Kind of output: transistor Turn-off time: 4µs Turn-on time: 4µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 130-260%@5mA Insulation voltage: 5kV Case: SO4 Manufacturer series: FOD817 Type of optocoupler: optocoupler |
на замовлення 725 шт: термін постачання 21-30 дні (днів) |
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LM317TG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 1.5A Case: TO220-3 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Heatsink thickness: 0.51...0.61mm Manufacturer series: LM317 Kind of package: tube |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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| CAT24C16C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C16C5ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT24C16HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CAT24C16WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
на замовлення 467 шт: термін постачання 21-30 дні (днів) |
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74AC14MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Kind of input: with Schmitt trigger Family: AC Kind of package: reel; tape Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 2...6V DC |
на замовлення 1538 шт: термін постачання 21-30 дні (днів) |
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74AC14SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Kind of input: with Schmitt trigger Family: AC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA Number of inputs: 1 Supply voltage: 2...6V DC |
на замовлення 563 шт: термін постачання 21-30 дні (днів) |
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74AC14SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AC Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. |
| MMBD1401 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 2724 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.45 грн |
| 65+ | 6.31 грн |
| 78+ | 5.24 грн |
| 100+ | 4.79 грн |
| 500+ | 3.87 грн |
| MMBD1403 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
товару немає в наявності
В кошику
од. на суму грн.
| MMBD1404 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 834 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 42+ | 9.70 грн |
| 46+ | 8.90 грн |
| 59+ | 6.86 грн |
| 100+ | 6.07 грн |
| 500+ | 4.51 грн |
| MMBD1404A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
товару немає в наявності
В кошику
од. на суму грн.
| MMBD1405 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
на замовлення 2728 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 39+ | 10.59 грн |
| 51+ | 7.97 грн |
| 100+ | 7.01 грн |
| 500+ | 5.29 грн |
| 1000+ | 4.67 грн |
| 2N3904BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 4866 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 32+ | 12.94 грн |
| 36+ | 11.24 грн |
| 54+ | 7.49 грн |
| 100+ | 6.28 грн |
| 500+ | 4.33 грн |
| 1000+ | 3.78 грн |
| 2N3904TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 771 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 63+ | 6.47 грн |
| 86+ | 4.72 грн |
| 100+ | 4.18 грн |
| 500+ | 3.34 грн |
| BSS138L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 11319 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.45 грн |
| 53+ | 7.68 грн |
| 67+ | 6.05 грн |
| 100+ | 5.41 грн |
| 250+ | 4.61 грн |
| 500+ | 4.06 грн |
| 1000+ | 3.53 грн |
| 3000+ | 2.77 грн |
| 6000+ | 2.34 грн |
| BSS138LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 16797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.55 грн |
| 44+ | 9.30 грн |
| 57+ | 7.21 грн |
| 100+ | 5.01 грн |
| 250+ | 4.12 грн |
| 500+ | 3.65 грн |
| 1000+ | 3.30 грн |
| 3000+ | 2.94 грн |
| 6000+ | 2.77 грн |
| BSS138LT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 8482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 46+ | 8.90 грн |
| 65+ | 6.31 грн |
| 104+ | 3.91 грн |
| BSS138W |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2759 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.90 грн |
| 33+ | 12.62 грн |
| 40+ | 10.35 грн |
| 60+ | 6.79 грн |
| 100+ | 5.87 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.45 грн |
| MMBFJ113 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
на замовлення 2955 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.13 грн |
| 26+ | 15.69 грн |
| 33+ | 12.62 грн |
| 50+ | 10.67 грн |
| 100+ | 9.14 грн |
| 250+ | 7.52 грн |
| 500+ | 6.63 грн |
| 1000+ | 6.31 грн |
| 1N4448TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 9341 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 125+ | 3.23 грн |
| 188+ | 2.15 грн |
| 228+ | 1.78 грн |
| 291+ | 1.39 грн |
| 500+ | 1.14 грн |
| 1000+ | 0.94 грн |
| 2000+ | 0.85 грн |
| LM2904DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
на замовлення 7472 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.29 грн |
| 45+ | 9.06 грн |
| 48+ | 8.47 грн |
| 75+ | 6.48 грн |
| 100+ | 6.19 грн |
| 1000+ | 4.44 грн |
| 1300+ | 4.29 грн |
| 2500+ | 4.15 грн |
| FGH40N60SFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 334.42 грн |
| 3+ | 293.55 грн |
| 10+ | 250.69 грн |
| 30+ | 193.27 грн |
| 90+ | 184.38 грн |
| FGH40N60SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
на замовлення 156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.36 грн |
| 3+ | 283.85 грн |
| 10+ | 249.88 грн |
| 30+ | 207.02 грн |
| 120+ | 194.08 грн |
| FGH40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
на замовлення 156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.50 грн |
| 10+ | 161.74 грн |
| 30+ | 145.56 грн |
| 120+ | 135.05 грн |
| FGAF40N60UFDTU |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
товару немає в наявності
В кошику
од. на суму грн.
| MC78LC33NTRG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 18+ | 23.61 грн |
| 20+ | 20.94 грн |
| 25+ | 20.86 грн |
| BCP53-10T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1253 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.93 грн |
| 17+ | 24.66 грн |
| 50+ | 17.47 грн |
| 100+ | 15.12 грн |
| 200+ | 13.34 грн |
| 500+ | 11.32 грн |
| 1000+ | 10.19 грн |
| BCP53-16T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1064 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 16+ | 26.04 грн |
| 18+ | 23.45 грн |
| 50+ | 15.20 грн |
| 100+ | 12.37 грн |
| 250+ | 10.19 грн |
| LM2574DW-ADJR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
на замовлення 791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.28 грн |
| 5+ | 114.02 грн |
| 10+ | 105.13 грн |
| 25+ | 97.04 грн |
| 50+ | 96.23 грн |
| LM2574N-5G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 457 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.41 грн |
| 10+ | 68.74 грн |
| 50+ | 59.03 грн |
| 100+ | 56.61 грн |
| 250+ | 55.80 грн |
| LM2574N-ADJG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 654 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.09 грн |
| 10+ | 78.44 грн |
| 50+ | 69.55 грн |
| BC856BDW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 6649 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 65+ | 6.31 грн |
| 88+ | 4.63 грн |
| 104+ | 3.90 грн |
| 500+ | 2.61 грн |
| 1000+ | 2.22 грн |
| 3000+ | 1.82 грн |
| BC856BDW1T3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BC856BLT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BC856BLT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| BC856BM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.45 грн |
| 52+ | 7.93 грн |
| 59+ | 6.95 грн |
| 105+ | 3.87 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.26 грн |
| MMBT2222ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 55846 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 84+ | 4.85 грн |
| 153+ | 2.65 грн |
| 500+ | 1.83 грн |
| 1000+ | 1.59 грн |
| 3000+ | 1.33 грн |
| 6000+ | 1.20 грн |
| 9000+ | 1.14 грн |
| 24000+ | 1.03 грн |
| MMBT2222ALT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2222ATT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 2578 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 148+ | 2.75 грн |
| 166+ | 2.44 грн |
| 176+ | 2.30 грн |
| 500+ | 2.00 грн |
| 1000+ | 1.88 грн |
| 1500+ | 1.81 грн |
| MMBT2222AWT1G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 6639 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 70+ | 5.82 грн |
| 105+ | 3.87 грн |
| 128+ | 3.18 грн |
| 500+ | 2.07 грн |
| 1000+ | 1.75 грн |
| 3000+ | 1.39 грн |
| 6000+ | 1.23 грн |
| MMBT2222AWT3G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| 1N5408RLG | ![]() |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 1798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 40+ | 10.19 грн |
| 50+ | 8.49 грн |
| 100+ | 7.76 грн |
| 200+ | 7.12 грн |
| 250+ | 6.95 грн |
| 500+ | 6.87 грн |
| FOD3120 |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 35kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 35kV/μs
на замовлення 622 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 129.76 грн |
| 10+ | 94.62 грн |
| 25+ | 82.48 грн |
| 50+ | 76.02 грн |
| FOD3120SD |
![]() |
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.37 грн |
| 5+ | 118.88 грн |
| 10+ | 108.36 грн |
| 100+ | 76.82 грн |
| 250+ | 63.89 грн |
| 500+ | 54.99 грн |
| FOD3120SDV |
![]() |
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
товару немає в наявності
В кошику
од. на суму грн.
| MC74AC132DG |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 2
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 2
Kind of package: tube
на замовлення 379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.32 грн |
| 16+ | 25.31 грн |
| 25+ | 22.97 грн |
| 55+ | 21.35 грн |
| 110+ | 21.11 грн |
| BCP56-16T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 8684 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.58 грн |
| 19+ | 22.24 грн |
| 50+ | 16.42 грн |
| 100+ | 14.56 грн |
| 500+ | 11.08 грн |
| 1000+ | 9.95 грн |
| 2000+ | 9.06 грн |
| 3000+ | 8.57 грн |
| 5000+ | 8.01 грн |
| BCP56-16T3G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 2720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.71 грн |
| 17+ | 24.34 грн |
| 50+ | 16.74 грн |
| 100+ | 14.23 грн |
| 250+ | 11.64 грн |
| 500+ | 10.27 грн |
| 1000+ | 9.22 грн |
| SBCP56-16T1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| 2N7002K |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4423 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.16 грн |
| 38+ | 10.67 грн |
| 59+ | 6.94 грн |
| 100+ | 5.83 грн |
| 500+ | 4.06 грн |
| 1000+ | 3.59 грн |
| 2N7002KT1G |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2979 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.10 грн |
| 105+ | 3.88 грн |
| 111+ | 3.66 грн |
| 139+ | 2.91 грн |
| 159+ | 2.55 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.73 грн |
| 2N7002KW |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
на замовлення 2918 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 44+ | 9.38 грн |
| 63+ | 6.45 грн |
| 100+ | 5.48 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.50 грн |
| 1N4742A |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
на замовлення 465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 129+ | 3.15 грн |
| 153+ | 2.64 грн |
| 1N4742ATR |
![]() |
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
на замовлення 991 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 55+ | 7.44 грн |
| 65+ | 6.23 грн |
| 101+ | 4.03 грн |
| 121+ | 3.36 грн |
| 500+ | 2.63 грн |
| FOD817B |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
на замовлення 1954 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 25+ | 16.82 грн |
| 28+ | 14.88 грн |
| 100+ | 9.78 грн |
| 500+ | 8.17 грн |
| FOD817B300 |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| FOD817B3SD |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
на замовлення 1808 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.22 грн |
| 20+ | 21.03 грн |
| 50+ | 16.82 грн |
| 100+ | 15.12 грн |
| 500+ | 12.13 грн |
| FOD817BS |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
на замовлення 3560 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.16 грн |
| 31+ | 13.18 грн |
| 100+ | 9.70 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.28 грн |
| 2000+ | 6.79 грн |
| FOD817BSD |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
на замовлення 725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 22+ | 19.00 грн |
| 50+ | 15.20 грн |
| 100+ | 13.83 грн |
| 500+ | 10.92 грн |
| LM317TG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Manufacturer series: LM317
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Manufacturer series: LM317
Kind of package: tube
на замовлення 350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.93 грн |
| 15+ | 27.25 грн |
| 25+ | 25.07 грн |
| 50+ | 23.69 грн |
| 100+ | 22.56 грн |
| 250+ | 21.35 грн |
| CAT24C16C4ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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од. на суму грн.
| CAT24C16C5ATR |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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| CAT24C16HU4I-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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од. на суму грн.
| CAT24C16WI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
на замовлення 467 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.16 грн |
| 100+ | 16.09 грн |
| 250+ | 15.12 грн |
| 74AC14MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: AC
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Kind of input: with Schmitt trigger
Family: AC
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 2...6V DC
на замовлення 1538 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.67 грн |
| 14+ | 30.00 грн |
| 25+ | 25.55 грн |
| 100+ | 20.46 грн |
| 250+ | 18.36 грн |
| 74AC14SC | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
на замовлення 563 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.32 грн |
| 16+ | 25.80 грн |
| 25+ | 23.78 грн |
| 74AC14SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 1
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