| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BCP56-10T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
на замовлення 2326 шт: термін постачання 21-30 дні (днів) |
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NDS332P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.74Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 5nC |
на замовлення 2655 шт: термін постачання 21-30 дні (днів) |
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MMBFJ310LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 24mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 1803 шт: термін постачання 21-30 дні (днів) |
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MBR20200CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.9V Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14015BDG | ONSEMI |
Category: Shift registersDescription: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B Operating temperature: -55...125°C Mounting: SMD Number of inputs: 3 Supply voltage: 3...18V DC Case: SOIC16 Kind of integrated circuit: 4bit; shift register Type of integrated circuit: digital Kind of package: tube Technology: CMOS Number of channels: 2 Family: HEF4000B |
на замовлення 115 шт: термін постачання 21-30 дні (днів) |
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MC14015BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B Case: SOIC16 Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Technology: CMOS Operating temperature: -55...125°C Number of channels: 2 Number of inputs: 3 Supply voltage: 3...18V DC Family: HEF4000B Kind of integrated circuit: 4bit; shift register |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TL431AILPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: bulk Maximum output current: 0.1A |
на замовлення 892 шт: термін постачання 21-30 дні (днів) |
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TL431CLPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: bulk Maximum output current: 0.1A |
на замовлення 898 шт: термін постачання 21-30 дні (днів) |
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NSI45020AT1G | ONSEMI |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Output current: 20mA Number of channels: 1 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V DC Power dissipation: 0.46W Operating current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54CLT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape |
на замовлення 2659 шт: термін постачання 21-30 дні (днів) |
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FOD817C3SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
на замовлення 1367 шт: термін постачання 21-30 дні (днів) |
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74AC138MTC | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 3; SMD; TSSOP16; AC; AC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 3 Mounting: SMD Case: TSSOP16 Manufacturer series: AC Family: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74AC138MTCX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; SMD; TSSOP16; AC; AC Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: TSSOP16 Family: AC Kind of package: reel; tape Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 2...6V DC Manufacturer series: AC Kind of integrated circuit: decoder; demultiplexer |
на замовлення 394 шт: термін постачання 21-30 дні (днів) |
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FQB8N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 30A Power dissipation: 147W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74VHC04MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC Type of integrated circuit: digital Number of channels: hex; 6 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: VHC Kind of package: reel; tape Number of inputs: 1 Kind of gate: NOT |
на замовлення 2376 шт: термін постачання 21-30 дні (днів) |
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MC33152PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Supply voltage: 6.1...18V DC Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Kind of package: tube Kind of output: non-inverting |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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MC14093BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Case: SO14 Operating temperature: -55...125°C Family: HEF4000B Technology: CMOS Kind of gate: NAND Number of channels: quad; 4 Kind of input: with Schmitt trigger Quiescent current: 30µA Number of inputs: 2 Supply voltage: 3...18V DC Kind of package: tube |
на замовлення 172 шт: термін постачання 21-30 дні (днів) |
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MC14093BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape Type of integrated circuit: digital Mounting: SMD Case: SO14 Family: HEF4000B Technology: CMOS Kind of gate: NAND Number of channels: quad; 4 Kind of input: with Schmitt trigger Number of inputs: 2 Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74ACT245SCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Operating temperature: -40...85°C Case: SO20 Mounting: SMD Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bidirectional; transceiver Kind of output: 3-state Manufacturer series: ACT Technology: CMOS; TTL Type of integrated circuit: digital |
на замовлення 273 шт: термін постачання 21-30 дні (днів) |
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74ACT245MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT Operating temperature: -40...85°C Case: TSSOP20 Mounting: SMD Kind of package: reel; tape Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bidirectional; transceiver Kind of output: 3-state Manufacturer series: ACT Technology: CMOS; TTL Type of integrated circuit: digital |
на замовлення 1196 шт: термін постачання 21-30 дні (днів) |
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74ACT245SC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT Operating temperature: -40...85°C Case: SO20-W Mounting: SMD Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Number of channels: 8 Kind of integrated circuit: bidirectional; transceiver Kind of output: 3-state Manufacturer series: ACT Technology: CMOS; TTL Type of integrated circuit: digital |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| NRVTSS3100ET3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.995V Max. forward impulse current: 90A Kind of package: reel; tape Max. load current: 6A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MOC3061M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
на замовлення 1084 шт: термін постачання 21-30 дні (днів) |
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MOC3061SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: Gull wing 6 Trigger current: 15mA Mounting: SMD Number of channels: 1 Slew rate: 1.5kV/μs Manufacturer series: MOC3061M |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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BAV103 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.5W Max. load current: 0.6A Capacitance: 5pF |
на замовлення 1603 шт: термін постачання 21-30 дні (днів) |
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MC74AC74DG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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MC74AC74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: TTL Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC33153DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: SO8 Output current: -2...1A Output voltage: 2...13.9V Number of channels: 1 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...105°C Impulse rise time: 55ns Pulse fall time: 55ns Kind of package: reel; tape Kind of output: inverting Protection: over current OCP; short circuit protection SCP; undervoltage UVP |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
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BAV99LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1V Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
на замовлення 67562 шт: термін постачання 21-30 дні (днів) |
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SBAV99LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| FCD7N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FCA47N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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FCA47N60-F109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCH47N60-F133 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Case: TO92 Formed Power dissipation: 0.9W Collector current: 1A Collector-emitter voltage: 160V Current gain: 160...320 Frequency: 50MHz Polarisation: bipolar Kind of package: Ammo Pack Type of transistor: PNP |
на замовлення 2136 шт: термін постачання 21-30 дні (днів) |
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BC546ABU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Current gain: 110...450 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 3147 шт: термін постачання 21-30 дні (днів) |
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BC546BTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC546BTF | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
на замовлення 5642 шт: термін постачання 21-30 дні (днів) |
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BC546CTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.625W Case: TO92 Formed Current gain: 110...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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MMBFJ177LT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA On-state resistance: 300Ω Type of transistor: P-JFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain current: 1.5mA Gate current: 50mA Power dissipation: 0.225W Gate-source voltage: 30V |
на замовлення 10610 шт: термін постачання 21-30 дні (днів) |
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MJL21194G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Frequency: 4MHz Kind of package: tube |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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| ISL9V3040S3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5818G | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: CASE59 Max. forward voltage: 0.875V Max. forward impulse current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS9926A | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 739 шт: термін постачання 21-30 дні (днів) |
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FDD8N50NZTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.9A Pulsed drain current: 26A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N5401YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100...400MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC32725TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 160...400 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 2949 шт: термін постачання 21-30 дні (днів) |
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BC327BU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 45V; 0.8A; 0.625/1.5W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.625/1.5W Case: TO92 Current gain: 40...630 Mounting: THT Kind of package: bulk Frequency: 260MHz |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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1N4002G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 1287 шт: термін постачання 21-30 дні (днів) |
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1N4002RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 5000pcs. |
на замовлення 4927 шт: термін постачання 21-30 дні (днів) |
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RS1M | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Power dissipation: 1.19W Features of semiconductor devices: fast switching; glass passivated |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
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NRVHPRS1MFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FQI4N90TU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.65A Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 16.8A Power dissipation: 140W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NGTB40N120FL3WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Type of transistor: IGBT Power dissipation: 227W Case: TO247-3 Mounting: THT Gate charge: 212nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 160A |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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MOC3023SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver Type of optocoupler: optotriac Insulation voltage: 5kV Kind of output: without zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 957 шт: термін постачання 21-30 дні (днів) |
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MOC3023SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver Type of optocoupler: optotriac Insulation voltage: 5kV Kind of output: without zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Output voltage: 400V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3023SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver Type of optocoupler: optotriac Insulation voltage: 5kV Kind of output: without zero voltage crossing driver Case: Gull wing 6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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MOC3023TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Trigger current: 5mA Mounting: THT Number of channels: 1 Output voltage: 400V Manufacturer series: MOC302XM |
на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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1N5407RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 200A; DO27 Case: DO27 Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Kind of package: reel; tape |
на замовлення 589 шт: термін постачання 21-30 дні (днів) |
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| BCP56-10T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 2326 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.22 грн |
| 21+ | 19.65 грн |
| 100+ | 13.91 грн |
| 200+ | 12.53 грн |
| 500+ | 11.00 грн |
| 1000+ | 10.03 грн |
| 2000+ | 9.46 грн |
| NDS332P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 2655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.71 грн |
| 16+ | 26.12 грн |
| 50+ | 19.89 грн |
| 100+ | 17.55 грн |
| 250+ | 15.04 грн |
| 500+ | 13.42 грн |
| 1000+ | 12.05 грн |
| 1500+ | 11.32 грн |
| MMBFJ310LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1803 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.48 грн |
| 25+ | 16.66 грн |
| 30+ | 13.67 грн |
| 100+ | 10.35 грн |
| 250+ | 8.65 грн |
| 500+ | 7.60 грн |
| 1000+ | 7.12 грн |
| MBR20200CTG | ![]() |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 20A
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од. на суму грн.
| MC14015BDG |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 4bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 2
Family: HEF4000B
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 4bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 2
Family: HEF4000B
на замовлення 115 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 26.44 грн |
| MC14015BDR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Operating temperature: -55...125°C
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Case: SOIC16
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Technology: CMOS
Operating temperature: -55...125°C
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
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В кошику
од. на суму грн.
| TL431AILPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
на замовлення 892 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.45 грн |
| 17+ | 24.42 грн |
| 25+ | 21.83 грн |
| 100+ | 20.62 грн |
| TL431CLPG | ![]() |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
на замовлення 898 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.09 грн |
| 17+ | 24.75 грн |
| 19+ | 22.08 грн |
| 25+ | 19.00 грн |
| 50+ | 17.22 грн |
| 100+ | 15.85 грн |
| 250+ | 15.69 грн |
| NSI45020AT1G |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 20mA
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 20mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 20mA
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 20mA
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од. на суму грн.
| BAT54CLT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
на замовлення 2659 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.23 грн |
| 109+ | 3.72 грн |
| 125+ | 3.23 грн |
| 167+ | 2.43 грн |
| 191+ | 2.13 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.33 грн |
| FOD817C3SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
на замовлення 1367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.61 грн |
| 21+ | 19.49 грн |
| 50+ | 15.45 грн |
| 100+ | 13.99 грн |
| 500+ | 12.05 грн |
| 74AC138MTC |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 3; SMD; TSSOP16; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 3; SMD; TSSOP16; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
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од. на суму грн.
| 74AC138MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; SMD; TSSOP16; AC; AC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Family: AC
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; SMD; TSSOP16; AC; AC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Family: AC
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
на замовлення 394 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.84 грн |
| 15+ | 28.47 грн |
| 25+ | 27.74 грн |
| FQB8N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| 74VHC04MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Number of channels: hex; 6
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: VHC
Kind of package: reel; tape
Number of inputs: 1
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Number of channels: hex; 6
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: VHC
Kind of package: reel; tape
Number of inputs: 1
Kind of gate: NOT
на замовлення 2376 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.61 грн |
| 21+ | 19.49 грн |
| 25+ | 17.63 грн |
| 100+ | 15.12 грн |
| 250+ | 13.67 грн |
| 1000+ | 11.64 грн |
| 1900+ | 10.92 грн |
| MC33152PG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Supply voltage: 6.1...18V DC
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Supply voltage: 6.1...18V DC
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Kind of output: non-inverting
на замовлення 146 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.67 грн |
| 6+ | 76.02 грн |
| 10+ | 68.74 грн |
| 25+ | 64.69 грн |
| MC14093BDG | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Quiescent current: 30µA
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Quiescent current: 30µA
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: tube
на замовлення 172 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 22+ | 19.00 грн |
| 25+ | 16.98 грн |
| 55+ | 15.69 грн |
| 110+ | 14.64 грн |
| MC14093BDR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape
Type of integrated circuit: digital
Mounting: SMD
Case: SO14
Family: HEF4000B
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
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| 74ACT245SCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Operating temperature: -40...85°C
Case: SO20
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Operating temperature: -40...85°C
Case: SO20
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
на замовлення 273 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.02 грн |
| 10+ | 50.14 грн |
| 25+ | 45.29 грн |
| 50+ | 42.86 грн |
| 100+ | 42.05 грн |
| 74ACT245MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: TSSOP20
Mounting: SMD
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: TSSOP20
Mounting: SMD
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
на замовлення 1196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.99 грн |
| 12+ | 36.31 грн |
| 25+ | 32.83 грн |
| 50+ | 30.65 грн |
| 100+ | 28.87 грн |
| 250+ | 27.01 грн |
| 500+ | 25.80 грн |
| 1000+ | 24.75 грн |
| 74ACT245SC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: SO20-W
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: SO20-W
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.19 грн |
| 10+ | 44.88 грн |
| NRVTSS3100ET3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.995V
Max. forward impulse current: 90A
Kind of package: reel; tape
Max. load current: 6A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.995V
Max. forward impulse current: 90A
Kind of package: reel; tape
Max. load current: 6A
Application: automotive industry
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| MOC3061M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.22 грн |
| 15+ | 27.74 грн |
| MOC3061SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Slew rate: 1.5kV/μs
Manufacturer series: MOC3061M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Slew rate: 1.5kV/μs
Manufacturer series: MOC3061M
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 101.02 грн |
| 10+ | 60.65 грн |
| 50+ | 49.33 грн |
| BAV103 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Capacitance: 5pF
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 82+ | 4.93 грн |
| 100+ | 4.46 грн |
| 250+ | 3.82 грн |
| 500+ | 3.36 грн |
| MC74AC74DG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
на замовлення 189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.84 грн |
| 18+ | 23.61 грн |
| 25+ | 21.51 грн |
| 55+ | 19.97 грн |
| MC74AC74DR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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| MC74AC74DTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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| MC33153DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT gate driver; SO8; -2÷1A; 2÷13.9V; Ch: 1; 11÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO8
Output current: -2...1A
Output voltage: 2...13.9V
Number of channels: 1
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...105°C
Impulse rise time: 55ns
Pulse fall time: 55ns
Kind of package: reel; tape
Kind of output: inverting
Protection: over current OCP; short circuit protection SCP; undervoltage UVP
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 206.40 грн |
| 10+ | 122.92 грн |
| 25+ | 104.32 грн |
| 50+ | 93.00 грн |
| 100+ | 88.15 грн |
| BAV99LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
на замовлення 67562 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.35 грн |
| 125+ | 3.23 грн |
| 173+ | 2.35 грн |
| 250+ | 1.67 грн |
| 500+ | 1.46 грн |
| 1000+ | 1.29 грн |
| 3000+ | 1.08 грн |
| 6000+ | 0.98 грн |
| 15000+ | 0.87 грн |
| SBAV99LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 67+ | 5.66 грн |
| FCD7N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FCA47N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 911.81 грн |
| 10+ | 726.19 грн |
| FCA47N60-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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| FCH47N60-F133 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 735.90 грн |
| KSA1013YTA |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Collector-emitter voltage: 160V
Current gain: 160...320
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Collector-emitter voltage: 160V
Current gain: 160...320
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
на замовлення 2136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.19 грн |
| 18+ | 23.29 грн |
| 100+ | 15.28 грн |
| 250+ | 13.10 грн |
| 500+ | 11.81 грн |
| 1000+ | 11.24 грн |
| BC546ABU |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 110...450
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 110...450
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 3147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.55 грн |
| 40+ | 10.27 грн |
| 57+ | 7.12 грн |
| 100+ | 6.04 грн |
| 200+ | 5.15 грн |
| 500+ | 4.20 грн |
| 1000+ | 3.73 грн |
| BC546BTA |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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| BC546BTF |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 5642 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.06 грн |
| 46+ | 8.90 грн |
| 65+ | 6.26 грн |
| 100+ | 5.35 грн |
| 500+ | 3.83 грн |
| 1000+ | 3.39 грн |
| 2000+ | 3.03 грн |
| 4000+ | 2.83 грн |
| BC546CTA |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 110...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 110...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 48+ | 8.49 грн |
| 62+ | 6.55 грн |
| 100+ | 5.18 грн |
| MMBFJ177LT1G |
![]() |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain current: 1.5mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
On-state resistance: 300Ω
Type of transistor: P-JFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain current: 1.5mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
на замовлення 10610 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 24+ | 16.98 грн |
| 27+ | 15.04 грн |
| 50+ | 11.24 грн |
| 100+ | 9.87 грн |
| 250+ | 8.41 грн |
| 500+ | 7.44 грн |
| 1000+ | 7.36 грн |
| MJL21194G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Frequency: 4MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Frequency: 4MHz
Kind of package: tube
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 366.64 грн |
| 10+ | 239.37 грн |
| ISL9V3040S3ST |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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од. на суму грн.
| 1N5818G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
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од. на суму грн.
| FDS9926A |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.64 грн |
| 13+ | 32.51 грн |
| 15+ | 28.79 грн |
| 50+ | 22.08 грн |
| 100+ | 19.89 грн |
| 250+ | 17.31 грн |
| 500+ | 16.58 грн |
| FDD8N50NZTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 2N5401YTA |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...400MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...400MHz
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од. на суму грн.
| BC32725TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 2949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 41+ | 9.87 грн |
| 60+ | 6.79 грн |
| 100+ | 5.71 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.51 грн |
| 2000+ | 3.15 грн |
| BC327BU |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625/1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 40...630
Mounting: THT
Kind of package: bulk
Frequency: 260MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625/1.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 40...630
Mounting: THT
Kind of package: bulk
Frequency: 260MHz
на замовлення 114 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.98 грн |
| 44+ | 9.38 грн |
| 100+ | 5.34 грн |
| 1N4002G |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1287 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.45 грн |
| 72+ | 5.66 грн |
| 100+ | 4.24 грн |
| 500+ | 3.36 грн |
| 1000+ | 3.11 грн |
| 1N4002RLG |
![]() |
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
на замовлення 4927 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 49+ | 8.41 грн |
| 70+ | 5.84 грн |
| 100+ | 5.00 грн |
| 250+ | 4.11 грн |
| 500+ | 3.59 грн |
| 1000+ | 3.16 грн |
| RS1M |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 36+ | 11.48 грн |
| 50+ | 8.49 грн |
| 100+ | 7.44 грн |
| 250+ | 6.15 грн |
| 500+ | 5.42 грн |
| 1000+ | 5.09 грн |
| NRVHPRS1MFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| FQI4N90TU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 16.8A
Power dissipation: 140W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 16.8A
Power dissipation: 140W
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| NGTB40N120FL3WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Power dissipation: 227W
Case: TO247-3
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Type of transistor: IGBT
Power dissipation: 227W
Case: TO247-3
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 637.49 грн |
| 3+ | 532.11 грн |
| 10+ | 469.84 грн |
| 30+ | 422.94 грн |
| MOC3023SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 957 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.90 грн |
| 14+ | 29.27 грн |
| 25+ | 27.01 грн |
| 50+ | 25.23 грн |
| 100+ | 23.53 грн |
| 500+ | 19.73 грн |
| MOC3023SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Output voltage: 400V
товару немає в наявності
В кошику
од. на суму грн.
| MOC3023SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: Gull wing 6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.67 грн |
| 14+ | 30.57 грн |
| 50+ | 27.17 грн |
| MOC3023TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 64 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.45 грн |
| 10+ | 46.34 грн |
| 1N5407RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 200A; DO27
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 200A; DO27
Case: DO27
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
на замовлення 589 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.03 грн |
| 29+ | 14.07 грн |
| 33+ | 12.62 грн |
| 100+ | 9.30 грн |









































