| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NSVBC847BTT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar On-state resistance: 1.2mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 100W Drain current: 203A Case: DFN5x6 Kind of channel: enhancement |
на замовлення 875 шт: термін постачання 21-30 дні (днів) |
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| 2SB1201S-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.8W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14027BDR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Supply voltage: 3...18V DC Case: SO16 Kind of integrated circuit: JK flip-flop Type of integrated circuit: digital Number of channels: 2 Trigger: negative-edge-triggered |
на замовлення 2300 шт: термін постачання 21-30 дні (днів) |
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| NVLJWS022N06CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 90A Power dissipation: 14W Case: WDFNW6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KSA1013YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Case: TO92 Formed Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: Ammo Pack Type of transistor: PNP |
на замовлення 1791 шт: термін постачання 21-30 дні (днів) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: bulk Type of transistor: PNP |
на замовлення 5904 шт: термін постачання 21-30 дні (днів) |
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FDD4685 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -32A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 893 шт: термін постачання 21-30 дні (днів) |
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| FDMA910PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W Kind of channel: enhancement Mounting: SMD Case: MicroFET Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -45A Drain-source voltage: -20V Drain current: -9.4A Gate charge: 29nC On-state resistance: 34mΩ Power dissipation: 2.4W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDME910PZT | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.1W; uDFN6 Kind of channel: enhancement Mounting: SMD Case: uDFN6 Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A On-state resistance: 36mΩ Power dissipation: 2.1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT5179 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 2GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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fds9945 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 324 шт: термін постачання 21-30 дні (днів) |
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| DTC144TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 120...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX85C12-T50R | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5380BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 120V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 801 шт: термін постачання 21-30 дні (днів) |
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| 1N5380BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 120V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD8314 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP6; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: SOP6 Turn-on time: 60ns Turn-off time: 40ns Slew rate: 50kV/μs Max. off-state voltage: 5V Manufacturer series: FOD8314 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD8314TR2 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOP6; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 5kV Case: SOP6 Slew rate: 50kV/μs Output voltage: 35V Max. off-state voltage: 5V Manufacturer series: FOD8314 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Number of channels: 1 Output current: 1A Voltage drop: 1.3V Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
на замовлення 2435 шт: термін постачання 21-30 дні (днів) |
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| BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
на замовлення 1925 шт: термін постачання 21-30 дні (днів) |
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FPF1003A | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP6 On-state resistance: 42mΩ Supply voltage: 1.2...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side |
на замовлення 440 шт: термін постачання 21-30 дні (днів) |
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FDC6324L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Type of integrated circuit: power switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SuperSOT-6 Supply voltage: 3...20V DC Control voltage: 1.5...8V DC Kind of package: reel; tape Kind of integrated circuit: high-side |
на замовлення 2969 шт: термін постачання 21-30 дні (днів) |
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NCP380HSN05AAT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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NTJD1155LT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88 Type of integrated circuit: power switch Output current: 1.3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC88 On-state resistance: 130/320mΩ Supply voltage: 1.8...8V DC Control voltage: 1.5...8V DC Kind of package: reel; tape Kind of integrated circuit: high-side |
на замовлення 647 шт: термін постачання 21-30 дні (днів) |
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NCP382HD05AAR2G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.5A; Ch: 2; P-Channel; SMD; SO8 Type of integrated circuit: power switch Output current: 0.5A Number of channels: 2 Kind of output: P-Channel Mounting: SMD Case: SO8 On-state resistance: 0.14Ω Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 3.5mV Slew rate: 7V/μs Voltage supply range: ± 5...18V DC; 10...36V DC Bandwidth: 16MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: low noise |
на замовлення 4232 шт: термін постачання 21-30 дні (днів) |
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MC33072DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 7mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual; 2 Input offset current: 300nA Input bias current: 0.7µA |
на замовлення 1974 шт: термін постачання 21-30 дні (днів) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 3mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 |
на замовлення 859 шт: термін постачання 21-30 дні (днів) |
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MC33071DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 7mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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MC33072ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 5mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual; 2 Input offset current: 300nA Input bias current: 0.7µA |
на замовлення 2350 шт: термін постачання 21-30 дні (днів) |
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| MC33077DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 37MHz; Ch: 2; ±2.5÷18VDC; SO8; 1.5mV Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 1.5mV Slew rate: 11V/μs Voltage supply range: ± 2.5...18V DC Bandwidth: 37MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: low noise Input offset current: 240nA Input bias current: 1.2µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33039DR2G | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC Mounting: SMD Operating voltage: 5.5...9V DC Operating temperature: -40...85°C Output current: 10mA Application: universal Kind of integrated circuit: brushless motor controller Kind of package: reel; tape Case: SO8 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33035DWR2G | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Mounting: SMD Operating voltage: 10...30V DC Operating temperature: -40...85°C Output current: 0.1A Application: universal Topology: H-bridge Kind of integrated circuit: brushless motor controller Kind of package: reel; tape Case: SO24 Type of integrated circuit: driver Number of channels: 3 Supply voltage: 0...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC3303DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 10mV Slew rate: 0.6V/μs Voltage supply range: ± 1.5...18V DC; 3...36V DC Bandwidth: 1MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Input offset current: 250nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33071ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 7mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: SO8 Type of integrated circuit: operational amplifier Number of channels: single; 1 Input offset current: 300nA Input bias current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 5mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Input offset current: 300nA Input bias current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 7mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: TSSOP14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Input offset current: 300nA Input bias current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 7mV Slew rate: 13V/μs Voltage supply range: ± 1.5...22V DC; 3...44V DC Bandwidth: 4.5MHz Kind of package: reel; tape Case: TSSOP14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 Input offset current: 300nA Input bias current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 200V |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of transistor: Darlington Type of transistor: PNP Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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74AC04SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Mounting: SMD Number of channels: hex; 6 Case: SO14 Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 Supply voltage: 2...6V DC Family: AC Kind of package: tube Type of integrated circuit: digital Kind of gate: NOT |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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MM74HCT74M | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Mounting: SMD Number of channels: 2 Case: SO14 Manufacturer series: HCT Trigger: positive-edge-triggered Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Kind of integrated circuit: D flip-flop Technology: CMOS Type of integrated circuit: digital |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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74LVX04M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA; LVX Mounting: SMD Number of channels: hex; 6 Case: SO14 Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 Supply voltage: 2...3.6V DC Family: LVX Kind of package: reel; tape Type of integrated circuit: digital Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| US2DA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1.5A; 50ns; SMA; Ufmax: 1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape |
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|
NRVUS2DA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1.5A; 50ns; SMA; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.5A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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|
74LVT2244MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; BiCMOS; SMD Mounting: SMD Operating temperature: -40...85°C Case: TSSOP20 Number of channels: 8 Supply voltage: 2.7...3.6V DC Kind of integrated circuit: buffer; line driver; non-inverting Kind of output: 3-state Technology: BiCMOS Type of integrated circuit: digital |
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| NCS2202SN2T1G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5 Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Delay time: 1.08µs Operating voltage: 0.85...6V Mounting: SMT Case: SOT23-5 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Kind of output: open drain Input bias current: 1pA Application: automotive industry |
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| FCD380N60E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| FCP380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
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| FCP380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
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| NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
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| FCPF380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
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|
BAV70LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Max. load current: 0.5A |
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| NCP335FCT2G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP4 On-state resistance: 0.42Ω Kind of package: reel; tape Supply voltage: 1.2...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
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|
MC33151DG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: SMD Operating temperature: -40...85°C Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Supply voltage: 6.5...18V DC Output current: -1.5...1.5A Kind of package: tube Case: SO8 Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: MOSFET gate driver Kind of output: inverting |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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|
MC33151PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
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В кошику од. на суму грн. | ||||||||||||||||||
|
MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: inverting Protection: undervoltage UVP |
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В кошику од. на суму грн. |
| NSVBC847BTT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NTMFS5C604NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 100W
Drain current: 203A
Case: DFN5x6
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 100W
Drain current: 203A
Case: DFN5x6
Kind of channel: enhancement
на замовлення 875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 213.85 грн |
| 10+ | 128.54 грн |
| 100+ | 91.46 грн |
| 500+ | 83.22 грн |
| 2SB1201S-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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| MC14027BDR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 3...18V DC
Case: SO16
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 3...18V DC
Case: SO16
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
на замовлення 2300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.49 грн |
| 16+ | 26.86 грн |
| 18+ | 24.14 грн |
| 25+ | 21.01 грн |
| 50+ | 19.12 грн |
| 100+ | 17.63 грн |
| 200+ | 16.48 грн |
| 250+ | 16.15 грн |
| 500+ | 15.33 грн |
| NVLJWS022N06CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| KSA1013YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
на замовлення 1791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.59 грн |
| 18+ | 24.22 грн |
| 100+ | 14.01 грн |
| 250+ | 11.70 грн |
| 500+ | 11.45 грн |
| KSA1013YBU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
на замовлення 5904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.14 грн |
| 15+ | 29.17 грн |
| 100+ | 17.80 грн |
| 500+ | 13.27 грн |
| 1000+ | 13.18 грн |
| FDD4685 |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -32A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -32A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 893 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.64 грн |
| 7+ | 62.62 грн |
| 10+ | 52.73 грн |
| 25+ | 51.91 грн |
| FDMA910PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Kind of channel: enhancement
Mounting: SMD
Case: MicroFET
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -20V
Drain current: -9.4A
Gate charge: 29nC
On-state resistance: 34mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Kind of channel: enhancement
Mounting: SMD
Case: MicroFET
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -20V
Drain current: -9.4A
Gate charge: 29nC
On-state resistance: 34mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
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| FDME910PZT |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.1W; uDFN6
Kind of channel: enhancement
Mounting: SMD
Case: uDFN6
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 36mΩ
Power dissipation: 2.1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.1W; uDFN6
Kind of channel: enhancement
Mounting: SMD
Case: uDFN6
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 36mΩ
Power dissipation: 2.1W
Gate-source voltage: ±8V
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| MMBT5179 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
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| fds9945 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 324 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.37 грн |
| 12+ | 35.84 грн |
| 25+ | 31.81 грн |
| 50+ | 28.43 грн |
| 100+ | 25.30 грн |
| DTC144TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 120...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 120...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 47kΩ
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| BZX85C12-T50R |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
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| 1N5380BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.07 грн |
| 24+ | 17.80 грн |
| 27+ | 15.66 грн |
| 32+ | 13.27 грн |
| 50+ | 12.36 грн |
| 1N5380BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| FOD8314 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 60ns
Turn-off time: 40ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8314
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 60ns
Turn-off time: 40ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8314
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| FOD8314TR2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOP6
Slew rate: 50kV/μs
Output voltage: 35V
Max. off-state voltage: 5V
Manufacturer series: FOD8314
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOP6
Slew rate: 50kV/μs
Output voltage: 35V
Max. off-state voltage: 5V
Manufacturer series: FOD8314
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| MC7918CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
на замовлення 2435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.59 грн |
| 15+ | 27.93 грн |
| 25+ | 22.99 грн |
| 50+ | 19.94 грн |
| 100+ | 18.70 грн |
| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
на замовлення 1925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.30 грн |
| 33+ | 12.85 грн |
| 100+ | 7.41 грн |
| 500+ | 5.15 грн |
| 1000+ | 4.60 грн |
| FPF1003A |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 42mΩ
Supply voltage: 1.2...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 42mΩ
Supply voltage: 1.2...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.41 грн |
| 23+ | 18.13 грн |
| 25+ | 17.30 грн |
| 100+ | 16.48 грн |
| FDC6324L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 2969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.28 грн |
| 17+ | 24.47 грн |
| NCP380HSN05AAT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.58 грн |
| 14+ | 29.91 грн |
| 25+ | 28.34 грн |
| NTJD1155LT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.17 грн |
| 21+ | 20.35 грн |
| 50+ | 14.83 грн |
| 100+ | 14.34 грн |
| NCP382HD05AAR2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.48 грн |
| 15+ | 29.25 грн |
| MC33079DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Voltage supply range: ± 5...18V DC; 10...36V DC
Bandwidth: 16MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Voltage supply range: ± 5...18V DC; 10...36V DC
Bandwidth: 16MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: low noise
на замовлення 4232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.30 грн |
| 27+ | 15.41 грн |
| 30+ | 14.01 грн |
| 100+ | 12.11 грн |
| 250+ | 11.37 грн |
| 500+ | 10.96 грн |
| MC33072DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
на замовлення 1974 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.51 грн |
| 21+ | 20.43 грн |
| 23+ | 18.37 грн |
| 26+ | 15.99 грн |
| 100+ | 13.43 грн |
| 250+ | 12.19 грн |
| 500+ | 11.54 грн |
| 1000+ | 11.12 грн |
| MC33074DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 3mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 3mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
на замовлення 859 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.93 грн |
| 13+ | 34.19 грн |
| 15+ | 29.25 грн |
| 25+ | 26.61 грн |
| 100+ | 25.38 грн |
| MC33071DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| 15+ | 28.51 грн |
| MC33072ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
на замовлення 2350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.17 грн |
| 20+ | 20.85 грн |
| 25+ | 18.37 грн |
| 100+ | 15.24 грн |
| 250+ | 13.43 грн |
| 500+ | 12.36 грн |
| MC33077DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; Ch: 2; ±2.5÷18VDC; SO8; 1.5mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low noise
Input offset current: 240nA
Input bias current: 1.2µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; Ch: 2; ±2.5÷18VDC; SO8; 1.5mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low noise
Input offset current: 240nA
Input bias current: 1.2µA
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| MC33039DR2G |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC
Mounting: SMD
Operating voltage: 5.5...9V DC
Operating temperature: -40...85°C
Output current: 10mA
Application: universal
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC
Mounting: SMD
Operating voltage: 5.5...9V DC
Operating temperature: -40...85°C
Output current: 10mA
Application: universal
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
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| MC33035DWR2G |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Mounting: SMD
Operating voltage: 10...30V DC
Operating temperature: -40...85°C
Output current: 0.1A
Application: universal
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO24
Type of integrated circuit: driver
Number of channels: 3
Supply voltage: 0...40V DC
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Mounting: SMD
Operating voltage: 10...30V DC
Operating temperature: -40...85°C
Output current: 0.1A
Application: universal
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO24
Type of integrated circuit: driver
Number of channels: 3
Supply voltage: 0...40V DC
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од. на суму грн.
| MC3303DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Bandwidth: 1MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 250nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Bandwidth: 1MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 250nA
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од. на суму грн.
| MC33071ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
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| MC33074ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 300nA
Input bias current: 0.7µA
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| MC33074ADTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: TSSOP14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: TSSOP14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 300nA
Input bias current: 0.7µA
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| MC33074DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: TSSOP14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: TSSOP14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 300nA
Input bias current: 0.7µA
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| MJH11022G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 314.12 грн |
| 3+ | 268.61 грн |
| 10+ | 201.05 грн |
| MJH11020G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 340.74 грн |
| 10+ | 266.14 грн |
| MJH11021G |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 324.77 грн |
| 74AC04SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 21+ | 19.69 грн |
| 25+ | 18.46 грн |
| MM74HCT74M |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Mounting: SMD
Number of channels: 2
Case: SO14
Manufacturer series: HCT
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: D flip-flop
Technology: CMOS
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Mounting: SMD
Number of channels: 2
Case: SO14
Manufacturer series: HCT
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: D flip-flop
Technology: CMOS
Type of integrated circuit: digital
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.85 грн |
| 19+ | 22.25 грн |
| 74LVX04M |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA; LVX
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...3.6V DC
Family: LVX
Kind of package: reel; tape
Type of integrated circuit: digital
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA; LVX
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...3.6V DC
Family: LVX
Kind of package: reel; tape
Type of integrated circuit: digital
Kind of gate: NOT
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| US2DA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 50ns; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 50ns; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
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| NRVUS2DA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 50ns; SMA; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 50ns; SMA; Ufmax: 1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| 74LVT2244MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; BiCMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
Number of channels: 8
Supply voltage: 2.7...3.6V DC
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
Technology: BiCMOS
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; BiCMOS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
Number of channels: 8
Supply voltage: 2.7...3.6V DC
Kind of integrated circuit: buffer; line driver; non-inverting
Kind of output: 3-state
Technology: BiCMOS
Type of integrated circuit: digital
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| NCS2202SN2T1G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Delay time: 1.08µs
Operating voltage: 0.85...6V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Kind of output: open drain
Input bias current: 1pA
Application: automotive industry
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; SOT23-5
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Delay time: 1.08µs
Operating voltage: 0.85...6V
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Kind of output: open drain
Input bias current: 1pA
Application: automotive industry
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| FCD380N60E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FCP380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCP380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| NTD280N60S5Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCPF380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| BAV70LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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| NCP335FCT2G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
On-state resistance: 0.42Ω
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
On-state resistance: 0.42Ω
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| MC33151DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.5...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Supply voltage: 6.5...18V DC
Output current: -1.5...1.5A
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Kind of output: inverting
на замовлення 171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 85.19 грн |
| 10+ | 60.97 грн |
| 25+ | 57.68 грн |
| MC33151PG | ![]() |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
| MC33151DR2G |
![]() |
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.





















