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MC79M08CDTRKG MC79M08CDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
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MMSZ4709T1G MMSZ4709T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 10nA
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)
63+6.95 грн
100+4.03 грн
120+3.39 грн
188+2.15 грн
500+1.65 грн
Мінімальне замовлення: 63
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SZMMSZ4709T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Leakage current: 10nA
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MMBF4392 ONSEMI MMBF4392.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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MBR140ESFT1G ONSEMI mbr140esf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
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MURF1620CTG ONSEMI murf1620ct-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 100A
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NDS7002A NDS7002A ONSEMI pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB3DEABF5F16F60D4&compId=NDS7002A.pdf?ci_sign=c2271d8c443c04ca247b1a740b6cbbb50bc25bcd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3063 шт:
термін постачання 21-30 дні (днів)
42+10.43 грн
59+6.86 грн
80+5.10 грн
100+4.46 грн
500+3.32 грн
1000+2.93 грн
1500+2.90 грн
Мінімальне замовлення: 42
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LM7815CT LM7815CT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38EC69C91292909E4&compId=LM7812.pdf?ci_sign=0e569da6a9ee7abe9bd6a679075eabee006ec050 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 17.5...30V
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ESD7104MUTAG ONSEMI esd7104-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: HDMI; USB
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
12+39.10 грн
15+27.43 грн
75+21.22 грн
100+20.41 грн
300+18.31 грн
Мінімальне замовлення: 12
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BC640-16G BC640-16G ONSEMI Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 800mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: TO92
Mounting: THT
Power: 0.8W
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NCV8403ASTT1G NCV8403ASTT1G ONSEMI ncv8403-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 123mΩ
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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FDMQ8403 ONSEMI fdmq8403-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x4
Kind of package: reel; tape
Case: WDFN12
Drain-source voltage: 100V
Pulsed drain current: 12A
Drain current: 6A
Gate charge: 5nC
On-state resistance: 191mΩ
Power dissipation: 17W
Gate-source voltage: ±20V
Polarisation: unipolar
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FDN86265P ONSEMI fdn86265p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -150V
Drain current: -0.8A
On-state resistance: 2.2Ω
Power dissipation: 1.5W
Gate-source voltage: ±25V
Polarisation: unipolar
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FDMA86265P ONSEMI fdma86265p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 2.4W; WDFN6
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN6
Drain-source voltage: -150V
Pulsed drain current: -2A
Drain current: -1A
Gate charge: 2.8nC
On-state resistance: 1.2mΩ
Power dissipation: 2.4W
Gate-source voltage: ±25V
Polarisation: unipolar
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NCP1052ST136T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 30Ω
Operating voltage: 7.5...10V DC
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NCP1052ST44T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 30Ω
Operating voltage: 7.5...10V DC
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NCP1053ST136T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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NCP1053ST44T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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NCP1055ST100T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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FDMC86262P ONSEMI fdmc86262p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Gate charge: 9.1nC
On-state resistance: 307mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -35A
Drain current: -2A
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FDMC86259P ONSEMI fdmc86259p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Gate charge: 32nC
On-state resistance: 178mΩ
Power dissipation: 62W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -13A
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FDMC86260 ONSEMI fdmc86260-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 135A; 54W; WDFN8
Gate charge: 15nC
On-state resistance: 34mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 135A
Drain current: 25A
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FDMC86261P ONSEMI fdmc86261p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Gate charge: 24nC
On-state resistance: 269mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -9A
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FDMC8622 ONSEMI fdmc8622-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Gate charge: 7.3nC
On-state resistance: 98mΩ
Power dissipation: 31W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 30A
Drain current: 16A
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FDMC86240 ONSEMI fdmc86240-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8
On-state resistance: 97mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
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FDMC86244 ONSEMI fdmc86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 12A
Drain current: 9.4A
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FDMC86248 ONSEMI fdmc86248-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33
Gate charge: 9nC
On-state resistance: 183mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 15A
Drain current: 13A
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FDMC86260ET150 ONSEMI fdmc86260et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Gate charge: 21nC
On-state resistance: 69mΩ
Power dissipation: 65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 116A
Drain current: 18A
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NC7WZ07P6X-L22347 ONSEMI nc7wz07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
3000+5.82 грн
Мінімальне замовлення: 3000
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NCP785AH33T1G NCP785AH33T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 3.3V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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KSC3503DS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3E2A8C8B880D6&compId=KSC3503.pdf?ci_sign=5ce3c82ed6b4a3736eced6edb7e71a43288e9305 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO
Mounting: THT
Collector-emitter voltage: 300V
Current gain: 60...120
Type of transistor: NPN
Frequency: 150MHz
Case: TO126ISO
Kind of package: bulk
Collector current: 0.1A
Pulsed collector current: 0.2A
Polarisation: bipolar
Power dissipation: 7W
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FDMS003N08C ONSEMI fdms003n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS003N08LHTWG ONSEMI nvmys003n08lh-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 132A; Idm: 900A; 68W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 132A
Pulsed drain current: 900A
Power dissipation: 68W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMA1032CZ ONSEMI fdma1032cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.7/-3.1A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 68/95mΩ
Mounting: SMD
Gate charge: 4/7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
16+28.67 грн
18+23.72 грн
100+20.98 грн
500+18.80 грн
1000+17.83 грн
Мінімальне замовлення: 16
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FDMS86310 ONSEMI fdms86310-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
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FDWS9509L-F085 FDWS9509L-F085 ONSEMI fdws9509l-f085-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Kind of package: reel; tape
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
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NCV274DTBR2G ONSEMI tlv271-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP14; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 2.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
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NCV4274CDT50RKG ONSEMI ncv4274c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV4274ADT50RKG ONSEMI ncv4274-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV33274ADTBR2G ONSEMI mc33272a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...125°C
Input offset voltage: 3.5mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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FDWS86368-F085 ONSEMI fdws86368_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 80V
Power dissipation: 214W
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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NJW3281G NJW3281G ONSEMI njw3281-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+288.45 грн
3+239.61 грн
10+212.18 грн
Мінімальне замовлення: 2
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MC14175BDG MC14175BDG ONSEMI mc14175b-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
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MC14175BDR2G MC14175BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE731120D3&compId=MC14175B-D.pdf?ci_sign=b7dd74e03d88fae8cf600b693e7652b4af9b83dc Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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GBU6M GBU6M ONSEMI GBU6x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 726 шт:
термін постачання 21-30 дні (днів)
7+63.42 грн
10+54.05 грн
Мінімальне замовлення: 7
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NRVB120VLSFT1G NRVB120VLSFT1G ONSEMI mbr120vlsft1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.34V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 20V
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
на замовлення 3124 шт:
термін постачання 21-30 дні (днів)
12+36.49 грн
16+26.46 грн
17+23.80 грн
100+16.46 грн
500+12.83 грн
Мінімальне замовлення: 12
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NRVBS260NT3G ONSEMI mbrs260t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 2A
Case: SMB
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Application: automotive industry
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LP2951CM LP2951CM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DD6D7807130745&compId=LP2951.pdf?ci_sign=6e2aa03d8d69e3036aff8e12dea545e0db4b7277 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.26÷28V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.26...28V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 6...28V
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MMQA5V6T1G MMQA5V6T1G ONSEMI mmqa-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74-6
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Version: ESD
Tolerance: ±5%
Breakdown voltage: 5.6V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
23+19.11 грн
29+14.04 грн
32+12.67 грн
50+9.60 грн
100+8.39 грн
500+5.97 грн
1000+5.49 грн
Мінімальне замовлення: 23
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NVH640S75L4SPB ONSEMI Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SSDC33
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 640A
Case: SSDC33
Application: automotive industry
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.28kA
Mechanical mounting: screw
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FSV20100V ONSEMI fsv20100v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
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DTC115TM3T5G ONSEMI dtc115t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Collector-emitter voltage: 50V
Current gain: 160...350
Quantity in set/package: 8000pcs.
Base resistor: 100kΩ
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NVR4501NT1G NVR4501NT1G ONSEMI pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E63E79CB0B20D4&compId=NxR4501N.PDF?ci_sign=180ebdc299f6e6ce523ffcbfd17d89734c695aba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2351 шт:
термін постачання 21-30 дні (днів)
9+48.65 грн
15+27.67 грн
100+18.07 грн
250+15.49 грн
500+13.88 грн
1000+12.50 грн
Мінімальне замовлення: 9
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NCP1060AP100G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.3A
Number of channels: 1
On-state resistance: 41Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
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NCP1063AP100G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.78A
Number of channels: 1
On-state resistance: 14Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
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NCP1079AAP100G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.05A
Number of channels: 1
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Case: DIP8
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MC14516BDR2G MC14516BDR2G ONSEMI mc14516b-d.pdf Category: Counters/dividers
Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Kind of integrated circuit: binary up/down counter
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
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NCP1361AABAYSNT1G ONSEMI ncp1361-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: TSOP6
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
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NCP1366AABAYDR2G ONSEMI ncp1361-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: SO7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
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MC14511BDR2G MC14511BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5440D3&compId=MC14511B-D.pdf?ci_sign=acfd7a2110c91ec19fb2dbfa5dbf8a2f2b15eddd Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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MC79M08CDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M08CDTRKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
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MMSZ4709T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4709T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 10nA
на замовлення 1971 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.95 грн
100+4.03 грн
120+3.39 грн
188+2.15 грн
500+1.65 грн
Мінімальне замовлення: 63
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SZMMSZ4709T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Leakage current: 10nA
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MMBF4392 MMBF4392.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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MBR140ESFT1G mbr140esf-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
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MURF1620CTG murf1620ct-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 100A; TO220FP; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 100A
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NDS7002A pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB3DEABF5F16F60D4&compId=NDS7002A.pdf?ci_sign=c2271d8c443c04ca247b1a740b6cbbb50bc25bcd
NDS7002A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3063 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.43 грн
59+6.86 грн
80+5.10 грн
100+4.46 грн
500+3.32 грн
1000+2.93 грн
1500+2.90 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
LM7815CT pVersion=0046&contRep=ZT&docId=005056AB752F1ED38EC69C91292909E4&compId=LM7812.pdf?ci_sign=0e569da6a9ee7abe9bd6a679075eabee006ec050
LM7815CT
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Input voltage: 17.5...30V
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ESD7104MUTAG esd7104-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: HDMI; USB
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+39.10 грн
15+27.43 грн
75+21.22 грн
100+20.41 грн
300+18.31 грн
Мінімальне замовлення: 12
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BC640-16G
BC640-16G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 800mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Case: TO92
Mounting: THT
Power: 0.8W
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NCV8403ASTT1G ncv8403-d.pdf
NCV8403ASTT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 123mΩ
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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FDMQ8403 fdmq8403-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x4
Kind of package: reel; tape
Case: WDFN12
Drain-source voltage: 100V
Pulsed drain current: 12A
Drain current: 6A
Gate charge: 5nC
On-state resistance: 191mΩ
Power dissipation: 17W
Gate-source voltage: ±20V
Polarisation: unipolar
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FDN86265P fdn86265p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -150V
Drain current: -0.8A
On-state resistance: 2.2Ω
Power dissipation: 1.5W
Gate-source voltage: ±25V
Polarisation: unipolar
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FDMA86265P fdma86265p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 2.4W; WDFN6
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN6
Drain-source voltage: -150V
Pulsed drain current: -2A
Drain current: -1A
Gate charge: 2.8nC
On-state resistance: 1.2mΩ
Power dissipation: 2.4W
Gate-source voltage: ±25V
Polarisation: unipolar
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NCP1052ST136T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 30Ω
Operating voltage: 7.5...10V DC
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NCP1052ST44T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 30Ω
Operating voltage: 7.5...10V DC
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NCP1053ST136T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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NCP1053ST44T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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NCP1055ST100T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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FDMC86262P fdmc86262p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Gate charge: 9.1nC
On-state resistance: 307mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -35A
Drain current: -2A
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FDMC86259P fdmc86259p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Gate charge: 32nC
On-state resistance: 178mΩ
Power dissipation: 62W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -13A
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FDMC86260 fdmc86260-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 135A; 54W; WDFN8
Gate charge: 15nC
On-state resistance: 34mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 135A
Drain current: 25A
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FDMC86261P fdmc86261p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Gate charge: 24nC
On-state resistance: 269mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -9A
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FDMC8622 fdmc8622-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Gate charge: 7.3nC
On-state resistance: 98mΩ
Power dissipation: 31W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 30A
Drain current: 16A
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FDMC86240 fdmc86240-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8
On-state resistance: 97mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
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FDMC86244 fdmc86244-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 12A
Drain current: 9.4A
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FDMC86248 fdmc86248-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33
Gate charge: 9nC
On-state resistance: 183mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 15A
Drain current: 13A
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FDMC86260ET150 fdmc86260et150-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Gate charge: 21nC
On-state resistance: 69mΩ
Power dissipation: 65W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 150V
Pulsed drain current: 116A
Drain current: 18A
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NC7WZ07P6X-L22347 nc7wz07-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+5.82 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NCP785AH33T1G ncp785a-d.pdf
NCP785AH33T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 3.3V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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KSC3503DS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3E2A8C8B880D6&compId=KSC3503.pdf?ci_sign=5ce3c82ed6b4a3736eced6edb7e71a43288e9305
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 7W; TO126ISO
Mounting: THT
Collector-emitter voltage: 300V
Current gain: 60...120
Type of transistor: NPN
Frequency: 150MHz
Case: TO126ISO
Kind of package: bulk
Collector current: 0.1A
Pulsed collector current: 0.2A
Polarisation: bipolar
Power dissipation: 7W
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FDMS003N08C fdms003n08c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS003N08LHTWG nvmys003n08lh-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 132A; Idm: 900A; 68W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 132A
Pulsed drain current: 900A
Power dissipation: 68W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMA1032CZ fdma1032cz-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.7/-3.1A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 68/95mΩ
Mounting: SMD
Gate charge: 4/7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.67 грн
18+23.72 грн
100+20.98 грн
500+18.80 грн
1000+17.83 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
FDMS86310 fdms86310-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 100A; 96W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 7.2mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 80V
Power dissipation: 96W
Pulsed drain current: 100A
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FDWS9509L-F085 fdws9509l-f085-d.pdf
FDWS9509L-F085
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Kind of package: reel; tape
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain current: -65A
Drain-source voltage: -40V
Gate charge: 67nC
On-state resistance: 13mΩ
Gate-source voltage: ±16V
Power dissipation: 107W
Application: automotive industry
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NCV274DTBR2G tlv271-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP14; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 2.4V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 2.7...36V DC
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 0.2nA
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NCV4274CDT50RKG ncv4274c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV4274ADT50RKG ncv4274-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: DPAK
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV33274ADTBR2G mc33272a-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...125°C
Input offset voltage: 3.5mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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FDWS86368-F085 fdws86368_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Polarisation: unipolar
Gate charge: 57nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 80V
Power dissipation: 214W
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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NJW3281G njw3281-d.pdf
NJW3281G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+288.45 грн
3+239.61 грн
10+212.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MC14175BDG mc14175b-d.pdf
MC14175BDG
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Trigger: positive-edge-triggered
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MC14175BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627EE731120D3&compId=MC14175B-D.pdf?ci_sign=b7dd74e03d88fae8cf600b693e7652b4af9b83dc
MC14175BDR2G
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; SMD; SOIC16; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
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GBU6M GBU6x.PDF
GBU6M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 726 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.42 грн
10+54.05 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NRVB120VLSFT1G mbr120vlsft1-d.pdf
NRVB120VLSFT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Max. forward voltage: 0.34V
Load current: 1A
Max. forward impulse current: 45A
Max. off-state voltage: 20V
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: single diode
на замовлення 3124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.49 грн
16+26.46 грн
17+23.80 грн
100+16.46 грн
500+12.83 грн
Мінімальне замовлення: 12
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NRVBS260NT3G mbrs260t3-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Load current: 2A
Case: SMB
Max. forward voltage: 0.55V
Max. forward impulse current: 60A
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Application: automotive industry
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LP2951CM pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DD6D7807130745&compId=LP2951.pdf?ci_sign=6e2aa03d8d69e3036aff8e12dea545e0db4b7277
LP2951CM
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.26÷28V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.26...28V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 6...28V
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MMQA5V6T1G mmqa-d.pdf
MMQA5V6T1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; Ch: 4; ±5%
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74-6
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Application: universal
Version: ESD
Tolerance: ±5%
Breakdown voltage: 5.6V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.11 грн
29+14.04 грн
32+12.67 грн
50+9.60 грн
100+8.39 грн
500+5.97 грн
1000+5.49 грн
Мінімальне замовлення: 23
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NVH640S75L4SPB
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; SSDC33
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 640A
Case: SSDC33
Application: automotive industry
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.28kA
Mechanical mounting: screw
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FSV20100V fsv20100v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 270A
Kind of package: reel; tape
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DTC115TM3T5G dtc115t-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Collector-emitter voltage: 50V
Current gain: 160...350
Quantity in set/package: 8000pcs.
Base resistor: 100kΩ
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NVR4501NT1G pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB8E63E79CB0B20D4&compId=NxR4501N.PDF?ci_sign=180ebdc299f6e6ce523ffcbfd17d89734c695aba
NVR4501NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2351 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.65 грн
15+27.67 грн
100+18.07 грн
250+15.49 грн
500+13.88 грн
1000+12.50 грн
Мінімальне замовлення: 9
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NCP1060AP100G ncp1060-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.3A
Number of channels: 1
On-state resistance: 41Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
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NCP1063AP100G ncp1060-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.78A
Number of channels: 1
On-state resistance: 14Ω
Operating voltage: 7...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Case: DIP7
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NCP1079AAP100G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.05A
Number of channels: 1
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Case: DIP8
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MC14516BDR2G mc14516b-d.pdf
MC14516BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Kind of integrated circuit: binary up/down counter
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
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NCP1361AABAYSNT1G ncp1361-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: TSOP6
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
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NCP1366AABAYDR2G ncp1361-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Operating temperature: -40...125°C
Output current: -300...500mA
Number of channels: 1
Operating voltage: 6.5...26V DC
Frequency: 75...85kHz
Case: SO7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
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MC14511BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5440D3&compId=MC14511B-D.pdf?ci_sign=acfd7a2110c91ec19fb2dbfa5dbf8a2f2b15eddd
MC14511BDR2G
Виробник: ONSEMI
Category: Latches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
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