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FOD814A3SD FOD814A3SD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF809FE1C5EDE27&compId=FOD814A3SD.pdf?ci_sign=bf83b2faef97cea167a74eb28998b3550a92d0d1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 327 шт:
термін постачання 21-30 дні (днів)
12+36.15 грн
18+22.54 грн
50+20.38 грн
Мінімальне замовлення: 12
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FOD814SD FOD814SD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD70B13A2ABC749&compId=FOD8143SD.pdf?ci_sign=0e31396c0e9219ee900bd93cc4229b55f6c43208 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
11+39.59 грн
13+32.61 грн
14+29.17 грн
20+25.10 грн
50+22.30 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FOD814300W FOD814300W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED886929FF46CA70A18&compId=FOD814300W.PDF?ci_sign=f0daf47003923b42cc68ee7adcb69e3150363606 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
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FOD8143SD FOD8143SD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD70B13A2ABC749&compId=FOD8143SD.pdf?ci_sign=0e31396c0e9219ee900bd93cc4229b55f6c43208 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
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FOD814A300 ONSEMI fod814-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: PDIP4
Manufacturer series: FOD814
Max. off-state voltage: 6V
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FOD8160 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2ED30C7620C7&compId=FOD8160.pdf?ci_sign=ceca685dda512c38984046ec4d3231e4dc3eb0eb Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; SOP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP5
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
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FOD8163 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2ED30C7760C7&compId=FOD8163.pdf?ci_sign=846ac23c94f4122ee9dd662b4bc7c4e389f935a1 Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
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FOD8163R2 ONSEMI fod8163-d.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 5kV; 10Mbps; SOP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 5kV
Case: SOP6
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Slew rate: 40kV/μs
Transfer rate: 10Mbps
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1N5282TR ONSEMI 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
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NRVUB1620CTT4G ONSEMI murb1620ct-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
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NCP3020BDR2G NCP3020BDR2G ONSEMI ncp3020-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 130mA
Number of channels: 1
Operating voltage: 4.7...40V DC
Frequency: 530...670kHz
Topology: buck
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FDN304P FDN304P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E43BF7AAA95EA&compId=FDN304P.pdf?ci_sign=10a595ecf2c09516bc84c8a362e6a479130ccd43 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
14+32.71 грн
19+21.74 грн
50+15.11 грн
100+13.11 грн
250+10.95 грн
500+9.75 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MOCD223M MOCD223M ONSEMI MOCD223M.pdf description Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
на замовлення 2413 шт:
термін постачання 21-30 дні (днів)
7+66.28 грн
11+39.32 грн
25+34.05 грн
50+30.69 грн
100+27.73 грн
500+25.50 грн
Мінімальне замовлення: 7
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NCP1055ST136T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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BD244C BD244C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BEB86B0018AC9E28&compId=BD244x.pdf?ci_sign=67ac9aa11aad307602afc15c3ed2373aa69d5080 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MMSZ4701T1G MMSZ4701T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Tolerance: ±5%
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxT1G
Case: SOD123
на замовлення 981 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
107+3.76 грн
200+2.00 грн
500+1.42 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
LM2904N LM2904N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE992DCA4E8FB1058BF&compId=LM2904_LM258_LM358.pdf?ci_sign=97f2c7b0489921cce116a17d2f144ffb2e9b87d8 Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Case: DIP8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
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NTMTS001N06CTXG ONSEMI ntmts001n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBT3906DW1T1G MBT3906DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=E1C051B73AFBB2F1A6F5005056AB5A8F&compId=mbt3906.pdf?ci_sign=26e32666265289c5b995f5de9786af893ee7a106 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 4784 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
81+4.96 грн
133+3.01 грн
500+2.20 грн
1000+1.97 грн
3000+1.69 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SS39 SS39 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Max. forward voltage: 0.85V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 90V
Max. forward impulse current: 100A
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)
9+50.78 грн
10+42.68 грн
11+39.80 грн
25+35.81 грн
100+29.65 грн
250+28.61 грн
Мінімальне замовлення: 9
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MC33275ST-5.0T3G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-5.0R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.0G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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MC33275D-3.3R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.0R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275MN-3.0R2G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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KSC3265YMTF KSC3265YMTF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3D7D5C1ECE0D6&compId=KSC3265.PDF?ci_sign=0769cdcc54200b5ae80e980163e3c4cabb93bb3c Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: NPN
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 25V
Current gain: 160...320
Frequency: 120MHz
Polarisation: bipolar
Mounting: SMD
на замовлення 2331 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
52+7.75 грн
73+5.48 грн
100+4.75 грн
500+3.47 грн
1000+3.05 грн
1500+2.84 грн
Мінімальне замовлення: 32
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NXH800H120L7QDSG ONSEMI nxh800h120l7qdsg-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge,NTC thermistor
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 800A
Case: PIM11
Application: for UPS; Inverter
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
Technology: SiC
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SZ1SMB5914BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDMC89521L ONSEMI fdmc89521l-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Gate charge: 24nC
On-state resistance: 27mΩ
Drain current: 8.2A
Power dissipation: 16W
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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NCV1413BDR2G NCV1413BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F8427E3C0F4C469&compId=MC1413BDG.PDF?ci_sign=e737d51d4eaf8f18d72f80713685830a5df7b71c Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry; for inductive load
Kind of package: reel; tape
Input voltage: 30V
на замовлення 2272 шт:
термін постачання 21-30 дні (днів)
8+58.53 грн
11+37.01 грн
25+32.45 грн
100+26.70 грн
250+23.58 грн
Мінімальне замовлення: 8
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FDLL333 ONSEMI FDH300-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Features of semiconductor devices: small signal
Type of diode: switching
Semiconductor structure: single diode
Case: SOD80
Kind of package: reel; tape
Max. forward voltage: 1.1V
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NVMTS0D6N04CLTXG ONSEMI nvmts0d6n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 554.5A; Idm: 900A; 122.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 554.5A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS0D6N04CTXG ONSEMI nvmts0d6n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 533A; Idm: 900A; 122.7W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 533A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 480µΩ
Mounting: SMD
Gate charge: 187nC
Kind of package: reel; tape
Kind of channel: enhancement
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NV25640DTHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF95E0D5&compId=NV25080-D.pdf?ci_sign=23500e7460fb21c7ea53d0f4eba6107d94cd3659 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
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NV25640DWHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF9720D5&compId=NV25080-D.pdf?ci_sign=b60380137d4770a8ff1cc9cb62ac1c59ee8a0801 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
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MRS1504T3G MRS1504T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD89A19822A66C60D2&compId=MRS1504T3G.PDF?ci_sign=d4f21f2bd350896ee3ac5d23b2709a813d91c461 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Type of diode: rectifying
Load current: 1.5A
Max. forward voltage: 1.02V
Max. load current: 3A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 50A
на замовлення 1778 шт:
термін постачання 21-30 дні (днів)
36+12.05 грн
45+8.95 грн
48+8.39 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
GBPC15005 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC15005W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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EGF1D EGF1D ONSEMI EGF1D-D.PDF egf1d-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 15pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 2W
Kind of package: reel; tape
на замовлення 5463 шт:
термін постачання 21-30 дні (днів)
11+42.18 грн
15+26.70 грн
50+21.58 грн
100+19.74 грн
250+17.50 грн
500+15.91 грн
1000+15.75 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NC7SB3257P6X ONSEMI nc7sb3257-d.pdf Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; IN: 2; CMOS
Mounting: SMD
Technology: CMOS
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 1
Number of inputs: 2
Supply voltage: 4...5V DC
Case: SC70-6
Kind of integrated circuit: demultiplexer; multiplexer
Kind of output: SPDT
Type of integrated circuit: analog switch
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GBPC2502 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: connectors FASTON
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GBPC2502W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC-W
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: wire Ø 1.0mm
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MJF31CG ONSEMI mjf31c-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 30W
Case: TO220FP
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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NTA4001NT1G NTA4001NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A05DC8338C745&compId=NTA4001N.PDF?ci_sign=158eea1d141787f6bae3bfa25c215b650f3c3e32 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
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NSVBC857BTT1G ONSEMI bc857btt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Current gain: 220...475
Collector-emitter voltage: 45V
Application: automotive industry
Frequency: 100MHz
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NTA4151PT1G ONSEMI nta4151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.301W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SBAW56TT1G ONSEMI baw56tt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50µA
Load current: 0.2A
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
Max. off-state voltage: 70V
Application: automotive industry
Semiconductor structure: common anode; double
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 6ns
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FDPF12N50T FDPF12N50T ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B3A35528DD2A17&compId=FDP12N50.pdf?ci_sign=2d34bc5657a95a8e6474b335ed20b5e8739aabf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
4+113.50 грн
10+99.91 грн
50+90.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDB12N50TM ONSEMI fdb12n50tm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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FAN7392MX ONSEMI fan7392-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP16
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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NTBG022N120M3S ONSEMI ntbg022n120m3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
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NTHL022N120M3S ONSEMI nthl022n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; Idm: 275A; 174W
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 137nC
On-state resistance: 44mΩ
Drain current: 62A
Pulsed drain current: 275A
Drain-source voltage: 1.2kV
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NVBG022N120M3S ONSEMI nvbg022n120m3s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
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TIL113M TIL113M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD30200517A0C7&compId=TIL113M-ONS.pdf?ci_sign=68308da7f654ffebc74c9c3fbfcd8cd671903616 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
Turn-on time: 5µs
CTR@If: 300%@10mA
Turn-off time: 0.1ms
на замовлення 972 шт:
термін постачання 21-30 дні (днів)
8+59.39 грн
10+45.40 грн
50+27.57 грн
100+22.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MCT6 MCT6 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C171050DD8A0C7&compId=MCT6-ONS.pdf?ci_sign=2f20e3f61d85f5d56f105a039a9b794bb02885d0 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
на замовлення 486 шт:
термін постачання 21-30 дні (днів)
9+49.92 грн
12+33.97 грн
25+29.33 грн
50+26.38 грн
100+24.06 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MCT61 MCT61 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE897E522F3826313D7&compId=MCT61.pdf?ci_sign=894094fab4fbd704ce9fb919faf9c75ff26987bc Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 50%@5mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
9+49.92 грн
12+35.41 грн
25+31.01 грн
50+28.13 грн
100+25.66 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MCT6S ONSEMI MCT62-D.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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MCT6SD ONSEMI MCT62-D.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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NCP110AMX100TBG ONSEMI ncp110-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.1A
Output voltage: 1V
Voltage drop: 0.13V
Input voltage: 1.1...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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FOD814A3SD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF809FE1C5EDE27&compId=FOD814A3SD.pdf?ci_sign=bf83b2faef97cea167a74eb28998b3550a92d0d1
FOD814A3SD
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 327 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.15 грн
18+22.54 грн
50+20.38 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FOD814SD pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD70B13A2ABC749&compId=FOD8143SD.pdf?ci_sign=0e31396c0e9219ee900bd93cc4229b55f6c43208
FOD814SD
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.59 грн
13+32.61 грн
14+29.17 грн
20+25.10 грн
50+22.30 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FOD814300W pVersion=0046&contRep=ZT&docId=005056AB752F1ED886929FF46CA70A18&compId=FOD814300W.PDF?ci_sign=f0daf47003923b42cc68ee7adcb69e3150363606
FOD814300W
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
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FOD8143SD pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CD70B13A2ABC749&compId=FOD8143SD.pdf?ci_sign=0e31396c0e9219ee900bd93cc4229b55f6c43208
FOD8143SD
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 20-300%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
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FOD814A300 fod814-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: PDIP4
Manufacturer series: FOD814
Max. off-state voltage: 6V
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FOD8160 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2ED30C7620C7&compId=FOD8160.pdf?ci_sign=ceca685dda512c38984046ec4d3231e4dc3eb0eb
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; SOP5
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP5
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
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FOD8163 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2ED30C7760C7&compId=FOD8163.pdf?ci_sign=846ac23c94f4122ee9dd662b4bc7c4e389f935a1
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷7.5V; logic; SOP6; Ch: 1; FOD8163; 40kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 22ns
Turn-off time: 9ns
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Output voltage: -500mV...7.5V
Slew rate: 40kV/μs
Transfer rate: 10Mbps
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FOD8163R2 fod8163-d.pdf
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 5kV; 10Mbps; SOP6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 5kV
Case: SOP6
Max. off-state voltage: 5V
Manufacturer series: FOD8163
Slew rate: 40kV/μs
Transfer rate: 10Mbps
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1N5282TR 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
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NRVUB1620CTT4G murb1620ct-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 0.895V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
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NCP3020BDR2G ncp3020-d.pdf
NCP3020BDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 130mA
Number of channels: 1
Operating voltage: 4.7...40V DC
Frequency: 530...670kHz
Topology: buck
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FDN304P pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E43BF7AAA95EA&compId=FDN304P.pdf?ci_sign=10a595ecf2c09516bc84c8a362e6a479130ccd43
FDN304P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.71 грн
19+21.74 грн
50+15.11 грн
100+13.11 грн
250+10.95 грн
500+9.75 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MOCD223M description MOCD223M.pdf
MOCD223M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
на замовлення 2413 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.28 грн
11+39.32 грн
25+34.05 грн
50+30.69 грн
100+27.73 грн
500+25.50 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCP1055ST136T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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BD244C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BEB86B0018AC9E28&compId=BD244x.pdf?ci_sign=67ac9aa11aad307602afc15c3ed2373aa69d5080
BD244C
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MMSZ4701T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4701T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Tolerance: ±5%
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxT1G
Case: SOD123
на замовлення 981 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
107+3.76 грн
200+2.00 грн
500+1.42 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
LM2904N pVersion=0046&contRep=ZT&docId=005056AB82531EE992DCA4E8FB1058BF&compId=LM2904_LM258_LM358.pdf?ci_sign=97f2c7b0489921cce116a17d2f144ffb2e9b87d8
LM2904N
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Case: DIP8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
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NTMTS001N06CTXG ntmts001n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBT3906DW1T1G pVersion=0046&contRep=ZT&docId=E1C051B73AFBB2F1A6F5005056AB5A8F&compId=mbt3906.pdf?ci_sign=26e32666265289c5b995f5de9786af893ee7a106
MBT3906DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
на замовлення 4784 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
81+4.96 грн
133+3.01 грн
500+2.20 грн
1000+1.97 грн
3000+1.69 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
SS39 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
SS39
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Max. forward voltage: 0.85V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 90V
Max. forward impulse current: 100A
на замовлення 2773 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.78 грн
10+42.68 грн
11+39.80 грн
25+35.81 грн
100+29.65 грн
250+28.61 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MC33275ST-5.0T3G mc33275-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-5.0R2G mc33275-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.0G mc33275-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
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MC33275D-3.3R2G mc33275-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275D-3.0R2G mc33275-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC33275MN-3.0R2G mc33275-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; DFN8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.3A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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KSC3265YMTF pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3D7D5C1ECE0D6&compId=KSC3265.PDF?ci_sign=0769cdcc54200b5ae80e980163e3c4cabb93bb3c
KSC3265YMTF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: NPN
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.2W
Collector current: 0.8A
Collector-emitter voltage: 25V
Current gain: 160...320
Frequency: 120MHz
Polarisation: bipolar
Mounting: SMD
на замовлення 2331 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
52+7.75 грн
73+5.48 грн
100+4.75 грн
500+3.47 грн
1000+3.05 грн
1500+2.84 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
NXH800H120L7QDSG nxh800h120l7qdsg-d.pdf
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge,NTC thermistor
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 800A
Case: PIM11
Application: for UPS; Inverter
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
Technology: SiC
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SZ1SMB5914BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDMC89521L fdmc89521l-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8.2A; Idm: 40A; 16W; Power33
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Gate charge: 24nC
On-state resistance: 27mΩ
Drain current: 8.2A
Power dissipation: 16W
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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NCV1413BDR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F8427E3C0F4C469&compId=MC1413BDG.PDF?ci_sign=e737d51d4eaf8f18d72f80713685830a5df7b71c
NCV1413BDR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry; for inductive load
Kind of package: reel; tape
Input voltage: 30V
на замовлення 2272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.53 грн
11+37.01 грн
25+32.45 грн
100+26.70 грн
250+23.58 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDLL333 FDH300-D.PDF
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1.1V; reel,tape
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Features of semiconductor devices: small signal
Type of diode: switching
Semiconductor structure: single diode
Case: SOD80
Kind of package: reel; tape
Max. forward voltage: 1.1V
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NVMTS0D6N04CLTXG nvmts0d6n04cl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 554.5A; Idm: 900A; 122.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 554.5A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMTS0D6N04CTXG nvmts0d6n04c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 533A; Idm: 900A; 122.7W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 533A
Pulsed drain current: 900A
Power dissipation: 122.7W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 480µΩ
Mounting: SMD
Gate charge: 187nC
Kind of package: reel; tape
Kind of channel: enhancement
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NV25640DTHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF95E0D5&compId=NV25080-D.pdf?ci_sign=23500e7460fb21c7ea53d0f4eba6107d94cd3659
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
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NV25640DWHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E42BF9720D5&compId=NV25080-D.pdf?ci_sign=b60380137d4770a8ff1cc9cb62ac1c59ee8a0801
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...150°C
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 10MHz
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MRS1504T3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD89A19822A66C60D2&compId=MRS1504T3G.PDF?ci_sign=d4f21f2bd350896ee3ac5d23b2709a813d91c461
MRS1504T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Type of diode: rectifying
Load current: 1.5A
Max. forward voltage: 1.02V
Max. load current: 3A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 50A
на замовлення 1778 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.05 грн
45+8.95 грн
48+8.39 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
GBPC15005 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC15005W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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EGF1D EGF1D-D.PDF egf1d-d.pdf
EGF1D
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 15pF
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 2W
Kind of package: reel; tape
на замовлення 5463 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.18 грн
15+26.70 грн
50+21.58 грн
100+19.74 грн
250+17.50 грн
500+15.91 грн
1000+15.75 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NC7SB3257P6X nc7sb3257-d.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; IN: 2; CMOS
Mounting: SMD
Technology: CMOS
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 1
Number of inputs: 2
Supply voltage: 4...5V DC
Case: SC70-6
Kind of integrated circuit: demultiplexer; multiplexer
Kind of output: SPDT
Type of integrated circuit: analog switch
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GBPC2502 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: connectors FASTON
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GBPC2502W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 25A
Case: GBPC-W
Type of bridge rectifier: single-phase
Version: square
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 200V
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Leads: wire Ø 1.0mm
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MJF31CG mjf31c-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 30W
Case: TO220FP
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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NTA4001NT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A05DC8338C745&compId=NTA4001N.PDF?ci_sign=158eea1d141787f6bae3bfa25c215b650f3c3e32
NTA4001NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
On-state resistance: 3.5Ω
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Drain current: 0.238A
Power dissipation: 0.3W
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NSVBC857BTT1G bc857btt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Current gain: 220...475
Collector-emitter voltage: 45V
Application: automotive industry
Frequency: 100MHz
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NTA4151PT1G nta4151p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.301W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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SBAW56TT1G baw56tt1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50µA
Load current: 0.2A
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
Max. off-state voltage: 70V
Application: automotive industry
Semiconductor structure: common anode; double
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 6ns
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FDPF12N50T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B3A35528DD2A17&compId=FDP12N50.pdf?ci_sign=2d34bc5657a95a8e6474b335ed20b5e8739aabf0
FDPF12N50T
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.50 грн
10+99.91 грн
50+90.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDB12N50TM fdb12n50tm-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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FAN7392MX fan7392-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP16
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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NTBG022N120M3S ntbg022n120m3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
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NTHL022N120M3S nthl022n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; Idm: 275A; 174W
Type of transistor: N-MOSFET
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 137nC
On-state resistance: 44mΩ
Drain current: 62A
Pulsed drain current: 275A
Drain-source voltage: 1.2kV
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NVBG022N120M3S nvbg022n120m3s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W
Type of transistor: N-MOSFET
Power dissipation: 220W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 142nC
On-state resistance: 44mΩ
Drain current: 71A
Pulsed drain current: 297A
Drain-source voltage: 1.2kV
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TIL113M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD30200517A0C7&compId=TIL113M-ONS.pdf?ci_sign=68308da7f654ffebc74c9c3fbfcd8cd671903616
TIL113M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
Turn-on time: 5µs
CTR@If: 300%@10mA
Turn-off time: 0.1ms
на замовлення 972 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.39 грн
10+45.40 грн
50+27.57 грн
100+22.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MCT6 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C171050DD8A0C7&compId=MCT6-ONS.pdf?ci_sign=2f20e3f61d85f5d56f105a039a9b794bb02885d0
MCT6
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
на замовлення 486 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.92 грн
12+33.97 грн
25+29.33 грн
50+26.38 грн
100+24.06 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MCT61 pVersion=0046&contRep=ZT&docId=005056AB752F1EE897E522F3826313D7&compId=MCT61.pdf?ci_sign=894094fab4fbd704ce9fb919faf9c75ff26987bc
MCT61
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 50%@5mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.92 грн
12+35.41 грн
25+31.01 грн
50+28.13 грн
100+25.66 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MCT6S MCT62-D.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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MCT6SD MCT62-D.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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NCP110AMX100TBG ncp110-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1V; 100mA; XDFN4; SMD
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP110
Case: XDFN4
Type of integrated circuit: voltage regulator
Output current: 0.1A
Output voltage: 1V
Voltage drop: 0.13V
Input voltage: 1.1...5.5V
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
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