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MC74HCT4051ADG MC74HCT4051ADG ONSEMI MC74HCT4051A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
на замовлення 234 шт:
термін постачання 21-30 дні (днів)
6+76.31 грн
10+42.76 грн
25+35.43 грн
48+31.23 грн
96+27.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
M74HCT4051ADTR2G ONSEMI MC74HCT4051A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
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MC74HCT4051ADR2G MC74HCT4051ADR2G ONSEMI MC74HCT4051A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
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FDMT80080DC ONSEMI fdmt80080dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSV10100V ONSEMI fsv10100v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
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NE592D8R2G NE592D8R2G ONSEMI ne592-d.pdf Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Bandwidth: 120MHz
Kind of package: reel; tape
Input bias current: 40µA
Voltage supply range: ± 8V DC
Gain: 100V/V; 400V/V
Input offset current: 6µA
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S210 ONSEMI ss29-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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S210FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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FDP42AN15A0 FDP42AN15A0 ONSEMI FDP42AN15A0.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Gate charge: 39nC
On-state resistance: 0.107Ω
Gate-source voltage: ±20V
Drain current: 24A
Power dissipation: 150W
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
3+204.98 грн
5+149.96 грн
10+131.01 грн
50+106.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MM3Z18VB ONSEMI MM3Z9V1B.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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MM3Z18VC ONSEMI MM3Z9V1C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
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QSD2030F QSD2030F ONSEMI QSD2030F.pdf Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Type of photoelement: photodiode
на замовлення 1966 шт:
термін постачання 21-30 дні (днів)
11+41.71 грн
14+30.16 грн
25+24.31 грн
50+20.19 грн
100+17.55 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
QSD2030 QSD2030 ONSEMI QSD2030-D.PDF Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Type of photoelement: photodiode
на замовлення 471 шт:
термін постачання 21-30 дні (днів)
18+25.73 грн
24+17.22 грн
28+15.24 грн
100+12.85 грн
250+11.45 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DTC114EET1G DTC114EET1G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.2/0.3W
на замовлення 713 шт:
термін постачання 21-30 дні (днів)
46+9.76 грн
62+6.67 грн
99+4.17 грн
123+3.36 грн
500+2.16 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
DTC114YET1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
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DTC114EM3T5G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
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DTC114YM3T5G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
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NSV1SS400T1G ONSEMI 1ss400t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
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1N5353BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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FAN3224TMX FAN3224TMX ONSEMI fan3223-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Technology: MillerDrive™
Output current: -4.3...2.8A
Pulse fall time: 17ns
Impulse rise time: 20ns
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)
5+102.05 грн
10+65.09 грн
25+56.03 грн
100+48.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FAN3224CMX FAN3224CMX ONSEMI fan3223-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Technology: MillerDrive™
Output current: -4.3...2.8A
Pulse fall time: 17ns
Impulse rise time: 20ns
на замовлення 2488 шт:
термін постачання 21-30 дні (днів)
4+121.57 грн
5+107.12 грн
25+97.23 грн
100+91.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
4N32M 4N32M ONSEMI 4N32M.pdf 4N32M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 993 шт:
термін постачання 21-30 дні (днів)
12+38.16 грн
17+25.54 грн
25+23.48 грн
50+22.08 грн
100+20.68 грн
500+18.13 грн
Мінімальне замовлення: 12
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4N32SM 4N32SM ONSEMI 4N32SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
9+50.58 грн
13+33.70 грн
25+29.99 грн
50+27.44 грн
100+26.20 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDC637AN FDC637AN ONSEMI FDC637AN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2258 шт:
термін постачання 21-30 дні (днів)
8+63.00 грн
11+38.15 грн
100+26.61 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES3J ES3J ONSEMI ES3J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 427 шт:
термін постачання 21-30 дні (днів)
22+20.41 грн
50+16.07 грн
100+14.91 грн
Мінімальне замовлення: 22
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GBU8M GBU8M ONSEMI GBU8x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FQAF11N90C FQAF11N90C ONSEMI FQAF11N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Gate-source voltage: ±30V
Power dissipation: 120W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Technology: QFET®
Mounting: THT
Case: TO3PF
Kind of package: tube
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FFSH15120ADN-F155 ONSEMI FAIR-S-A0002366372-1.pdf?t.download=true&u=5oefqw ffsh15120adn-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Kind of package: tube
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MJL21194G MJL21194G ONSEMI MJL21193G.PDF description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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NTMFSC011N08M7 ONSEMI ntmfsc011n08m7-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7660AS ONSEMI fdms7660as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 83W
Pulsed drain current: 150A
Kind of channel: enhancement
Gate charge: 90nC
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
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1N5358BG 1N5358BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5358BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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FSB50450S FSB50450S ONSEMI fsb50450s-d.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 1.5A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 10W
Case: SPM5D-023
Collector-emitter voltage: 500V
Frequency: 15kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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1N4007 1N4007 ONSEMI 1N4007-FAI.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
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MMBT2907A MMBT2907A ONSEMI MMBT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NCV317LBDR2G NCV317LBDR2G ONSEMI LM317L_NCV317L.PDF Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Tolerance: ±1.5%
Operating temperature: -40...125°C
Input voltage: 1.2...40V
Manufacturer series: NCV317L
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NCV317LBZG NCV317LBZG ONSEMI lm317l-d.pdf ONSM-S-A0003065618-1.pdf?t.download=true&u=5oefqw Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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NCV317LBZRAG NCV317LBZRAG ONSEMI lm317l-d.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FDLL914 ONSEMI 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
Power dissipation: 0.5W
Max. load current: 0.4A
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FDLL914A ONSEMI 1n914-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD80
Max. forward voltage: 1V
Kind of package: reel; tape
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FDLL914B ONSEMI 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD80
Max. forward voltage: 1V
Kind of package: reel; tape
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MMSZ5248CT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
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SZMMSZ5248ET1G ONSEMI MMSZ52xxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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SZMMSZ5248BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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RS1J RS1J ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
на замовлення 486 шт:
термін постачання 21-30 дні (днів)
23+19.52 грн
33+12.77 грн
41+10.05 грн
50+8.40 грн
100+7.09 грн
250+6.67 грн
Мінімальне замовлення: 23
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RS1JFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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RS1JFP ONSEMI rs1mfp-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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NRVHPRS1JFA NRVHPRS1JFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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KSD880YTU ONSEMI KSD880.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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FGH40T120SMD FGH40T120SMD ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+624.70 грн
10+498.50 грн
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FGY60T120SQDN FGY60T120SQDN ONSEMI fgy60t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+750.70 грн
3+664.12 грн
В кошику  од. на суму  грн.
FGY75T120SQDN FGY75T120SQDN ONSEMI fgy75t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+741.83 грн
В кошику  од. на суму  грн.
FGH40T120SMD-F155 FGH40T120SMD-F155 ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+867.83 грн
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NXH400N100H4Q2F2PG ONSEMI nxh400n100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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NXH450B100H4Q2F2PG ONSEMI nxh450b100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
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FQPF3N80C FQPF3N80C ONSEMI FQPF3N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Gate charge: 16.5nC
Power dissipation: 39W
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
4+125.12 грн
50+80.75 грн
Мінімальне замовлення: 4
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FQP3N80C FQP3N80C ONSEMI FAIRS47784-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Power dissipation: 107W
Pulsed drain current: 12A
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SBC847BWT1G SBC847BWT1G ONSEMI BC84x.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 8120 шт:
термін постачання 21-30 дні (днів)
125+3.55 грн
152+2.72 грн
220+1.88 грн
257+1.61 грн
500+1.12 грн
1000+1.00 грн
3000+0.82 грн
6000+0.81 грн
Мінімальне замовлення: 125
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MC74HCT4051ADG MC74HCT4051A-D.pdf
MC74HCT4051ADG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: tube
на замовлення 234 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.31 грн
10+42.76 грн
25+35.43 грн
48+31.23 грн
96+27.69 грн
Мінімальне замовлення: 6
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M74HCT4051ADTR2G MC74HCT4051A-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
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MC74HCT4051ADR2G MC74HCT4051A-D.pdf
MC74HCT4051ADR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 2...6V DC; 2...12V DC
Kind of package: reel; tape
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FDMT80080DC fdmt80080dc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSV10100V fsv10100v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
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NE592D8R2G ne592-d.pdf
NE592D8R2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Bandwidth: 120MHz
Kind of package: reel; tape
Input bias current: 40µA
Voltage supply range: ± 8V DC
Gain: 100V/V; 400V/V
Input offset current: 6µA
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S210 ss29-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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S210FA ss29fa-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
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FDP42AN15A0 FDP42AN15A0.pdf
FDP42AN15A0
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Gate charge: 39nC
On-state resistance: 0.107Ω
Gate-source voltage: ±20V
Drain current: 24A
Power dissipation: 150W
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: TO220AB
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+204.98 грн
5+149.96 грн
10+131.01 грн
50+106.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MM3Z18VB MM3Z9V1B.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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MM3Z18VC MM3Z9V1C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 18V; SMD; reel,tape; SOD323F; single diode; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
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QSD2030F QSD2030F.pdf
QSD2030F
Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Type of photoelement: photodiode
на замовлення 1966 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.71 грн
14+30.16 грн
25+24.31 грн
50+20.19 грн
100+17.55 грн
Мінімальне замовлення: 11
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QSD2030 QSD2030-D.PDF
QSD2030
Виробник: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Type of photoelement: photodiode
на замовлення 471 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.73 грн
24+17.22 грн
28+15.24 грн
100+12.85 грн
250+11.45 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DTC114EET1G dtc114e-d.pdf
DTC114EET1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.2/0.3W
на замовлення 713 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.76 грн
62+6.67 грн
99+4.17 грн
123+3.36 грн
500+2.16 грн
Мінімальне замовлення: 46
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DTC114YET1G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
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DTC114EM3T5G dtc114e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
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DTC114YM3T5G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
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NSV1SS400T1G 1ss400t1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD523
Max. forward voltage: 1.2V
Kind of package: reel; tape
Application: automotive industry
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1N5353BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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FAN3224TMX fan3223-d.pdf
FAN3224TMX
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Technology: MillerDrive™
Output current: -4.3...2.8A
Pulse fall time: 17ns
Impulse rise time: 20ns
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.05 грн
10+65.09 грн
25+56.03 грн
100+48.61 грн
Мінімальне замовлення: 5
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FAN3224CMX fan3223-d.pdf
FAN3224CMX
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Technology: MillerDrive™
Output current: -4.3...2.8A
Pulse fall time: 17ns
Impulse rise time: 20ns
на замовлення 2488 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.57 грн
5+107.12 грн
25+97.23 грн
100+91.46 грн
Мінімальне замовлення: 4
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4N32M 4N32M.pdf 4N32M.pdf
4N32M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 993 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.16 грн
17+25.54 грн
25+23.48 грн
50+22.08 грн
100+20.68 грн
500+18.13 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
4N32SM 4N32SM.pdf
4N32SM
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Number of channels: 1
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.58 грн
13+33.70 грн
25+29.99 грн
50+27.44 грн
100+26.20 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDC637AN FDC637AN.pdf
FDC637AN
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2258 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+63.00 грн
11+38.15 грн
100+26.61 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES3J ES3J.pdf
ES3J
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
на замовлення 427 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+20.41 грн
50+16.07 грн
100+14.91 грн
Мінімальне замовлення: 22
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GBU8M GBU8x.PDF
GBU8M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FQAF11N90C FQAF11N90C.pdf
FQAF11N90C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 1.1Ω
Drain current: 4.4A
Gate-source voltage: ±30V
Power dissipation: 120W
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Technology: QFET®
Mounting: THT
Case: TO3PF
Kind of package: tube
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FFSH15120ADN-F155 FAIR-S-A0002366372-1.pdf?t.download=true&u=5oefqw ffsh15120adn-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Kind of package: tube
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MJL21194G description MJL21193G.PDF
MJL21194G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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NTMFSC011N08M7 ntmfsc011n08m7-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7660AS fdms7660as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 83W
Pulsed drain current: 150A
Kind of channel: enhancement
Gate charge: 90nC
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
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1N5358BG 1N53xx.PDF
1N5358BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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1N5358BRLG description 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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FSB50450S fsb50450s-d.pdf
FSB50450S
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 1.5A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 10W
Case: SPM5D-023
Collector-emitter voltage: 500V
Frequency: 15kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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1N4007 1N4007-FAI.pdf
1N4007
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
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MMBT2907A MMBT2907A.pdf
MMBT2907A
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NCV317LBDR2G LM317L_NCV317L.PDF
NCV317LBDR2G
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Tolerance: ±1.5%
Operating temperature: -40...125°C
Input voltage: 1.2...40V
Manufacturer series: NCV317L
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NCV317LBZG lm317l-d.pdf ONSM-S-A0003065618-1.pdf?t.download=true&u=5oefqw
NCV317LBZG
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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NCV317LBZRAG lm317l-d.pdf
NCV317LBZRAG
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FDLL914 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
Power dissipation: 0.5W
Max. load current: 0.4A
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FDLL914A 1n914-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD80
Max. forward voltage: 1V
Kind of package: reel; tape
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FDLL914B 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD80
Max. forward voltage: 1V
Kind of package: reel; tape
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MMSZ5248CT1G MMSZ52xxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
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SZMMSZ5248ET1G MMSZ52xxET1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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SZMMSZ5248BT1G MMSZ52xxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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RS1J RS1x.pdf
RS1J
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
на замовлення 486 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.52 грн
33+12.77 грн
41+10.05 грн
50+8.40 грн
100+7.09 грн
250+6.67 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
RS1JFA rs1afa-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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RS1JFP rs1mfp-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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NRVHPRS1JFA rs1afa-d.pdf
NRVHPRS1JFA
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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KSD880YTU KSD880.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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FGH40T120SMD FGH40T120SMD.pdf
FGH40T120SMD
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+624.70 грн
10+498.50 грн
В кошику  од. на суму  грн.
FGY60T120SQDN fgy60t120sqdn-d.pdf
FGY60T120SQDN
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+750.70 грн
3+664.12 грн
В кошику  од. на суму  грн.
FGY75T120SQDN fgy75t120sqdn-d.pdf
FGY75T120SQDN
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+741.83 грн
В кошику  од. на суму  грн.
FGH40T120SMD-F155 FGH40T120SMD.pdf
FGH40T120SMD-F155
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+867.83 грн
В кошику  од. на суму  грн.
NXH400N100H4Q2F2PG nxh400n100h4q2f2-d.pdf
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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NXH450B100H4Q2F2PG nxh450b100h4q2f2-d.pdf
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
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FQPF3N80C FQPF3N80C.pdf
FQPF3N80C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Gate charge: 16.5nC
Power dissipation: 39W
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+125.12 грн
50+80.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQP3N80C FAIRS47784-1.pdf?t.download=true&u=5oefqw
FQP3N80C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Power dissipation: 107W
Pulsed drain current: 12A
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SBC847BWT1G BC84x.pdf
SBC847BWT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 8120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
125+3.55 грн
152+2.72 грн
220+1.88 грн
257+1.61 грн
500+1.12 грн
1000+1.00 грн
3000+0.82 грн
6000+0.81 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
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