| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| CAV25128VE-GT3 | ONSEMI |
 Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 10MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
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| CAV25128YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 10MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI |
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MMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 2.7V Manufacturer series: MMSZ52xxB |
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| SZMMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 2.7V Manufacturer series: MMSZ52xxB Application: automotive industry |
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| NTMFS6H852NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFS6H852NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFS6H852NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
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| UJ4SC075018B7S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 52A Pulsed drain current: 208A Power dissipation: 259W Case: TO263-7 Gate-source voltage: -25...25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
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| UJ4SC075018L8S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 53A Pulsed drain current: 208A Power dissipation: 349W Case: H-PDSO-F8 Gate-source voltage: -25...25V On-state resistance: 37mΩ Mounting: SMD Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
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1N4936 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
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| BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
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| UJ3D1725K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.7kV Load current: 25A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1700V Max. forward impulse current: 163A Power dissipation: 69.8W Kind of package: tube |
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MMBF5457 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 3mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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| MMSZ5226CT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxC |
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| MC33152VDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: 1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...85°C Supply voltage: 6.1...18V |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NTP095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
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| NTP095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
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| NVB095N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTHL095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
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| NTHL095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.8A Pulsed drain current: 90A Power dissipation: 272W Case: TO247 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
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| NTMT095N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTPF095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
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FQD13N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
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FOD3182 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
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| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...25V Turn-off time: 55ns Turn-on time: 75ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
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| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Manufacturer series: FOD3180 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 15kV/μs |
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| FOD3182SDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Manufacturer series: FOD3182 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 50kV/μs |
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1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
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MM3Z4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Mounting: SMD Type of transistor: N-JFET Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: -40V Drain current: 8mA Gate current: 50mA Power dissipation: 0.25W On-state resistance: 60Ω |
на замовлення 902 шт: термін постачання 21-30 дні (днів) |
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| CS51414EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of integrated circuit: DC/DC converter Case: SO8 Type of integrated circuit: PMIC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NCP160BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.105V Output current: 0.25A |
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| NCP160AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.105V Output current: 0.25A |
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| NCP161AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD Manufacturer series: NCP161 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.185V Output current: 0.45A |
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| NCP161BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD Manufacturer series: NCP161 Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Voltage drop: 0.185V Output current: 0.45A |
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| NCV1117DT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NXH240B120H3Q1P1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32 Electrical mounting: Press-Fit Application: for UPS; Inverter Type of semiconductor module: IGBT Case: PIM32 Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 92A Pulsed collector current: 276A Max. off-state voltage: 1.2kV Technology: SiC Semiconductor structure: SiC diode/transistor |
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FDD86252 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 103mΩ Gate-source voltage: ±20V Drain current: 27A Power dissipation: 89W Drain-source voltage: 150V Technology: PowerTrench® |
на замовлення 2327 шт: термін постачання 21-30 дні (днів) |
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FDS6673BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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FDMC8651 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 27.2nC On-state resistance: 9.3mΩ Gate-source voltage: ±12V Drain current: 20A Drain-source voltage: 30V Power dissipation: 41W |
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| DTA123EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 8...15 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
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| DTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.6W Current gain: 8...15 Quantity in set/package: 8000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
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| DTA123JET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 80...140 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar |
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MBRF30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.93V Max. forward impulse current: 250A Kind of package: tube Max. load current: 30A |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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| MBR30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Semiconductor structure: common cathode; double Case: TO220AB Type of diode: Schottky rectifying Kind of package: tube Mounting: THT Max. forward voltage: 0.8V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 250A |
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| MBR30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5x6 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA |
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| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Application: automotive industry |
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| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.9V Load current: 30A Max. load current: 60A Max. off-state voltage: 100V Max. forward impulse current: 0.3kA Application: automotive industry |
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 |
SB540 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 500pF Kind of package: reel; tape Power dissipation: 5W |
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| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX84C Application: automotive industry |
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| SZBZX84C10ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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| STD5406NT4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Pulsed drain current: 150A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
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| NXH003P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 350A Pulsed drain current: 700A Drain-source voltage: 1.2kV Power dissipation: 979W Topology: MOSFET half-bridge Kind of package: in-tray |
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| NXH003P120M3F2PTNG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 435A Pulsed drain current: 870A Drain-source voltage: 1.2kV Power dissipation: 1482W Topology: MOSFET half-bridge Kind of package: in-tray |
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| NXH007F120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB Case: PIM34 Mechanical mounting: screw Topology: H-bridge Technology: SiC Kind of package: in-tray Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Drain-source voltage: 1.2kV Pulsed drain current: 447A Drain current: 149A Gate-source voltage: -10...22V On-state resistance: 15.9mΩ Power dissipation: 353W Semiconductor structure: transistor/transistor |
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| NXH008T120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 15mΩ Drain current: 127A Pulsed drain current: 387A Drain-source voltage: 1.2kV Power dissipation: 371W Topology: 3-level inverter TNPC Kind of package: in-tray |
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| NXH011F120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 21.9mΩ Drain current: 105A Pulsed drain current: 316A Drain-source voltage: 1.2kV Power dissipation: 244W Topology: H-bridge Kind of package: in-tray |
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| NXH011T120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 28.1mΩ Drain current: 91A Pulsed drain current: 273A Drain-source voltage: 1.2kV Power dissipation: 272W Topology: 3-level inverter TNPC Kind of package: in-tray |
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| NXH400N100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42 Type of semiconductor module: IGBT Semiconductor structure: SiC diode/transistor Max. off-state voltage: 1kV Collector current: 400A Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Technology: SiC Mechanical mounting: screw Case: PIM42 |
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| M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Manufacturer series: HCT Kind of package: reel; tape Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of inputs: 5 Technology: CMOS; TTL Type of integrated circuit: digital Family: HCT |
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| CAV25128VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
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| CAV25128YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 10MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
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| MMSZ5223BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
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| SZMMSZ5223BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 2.7V
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| NTMFS6H852NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS6H852NLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS6H852NLWFT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 208A
Power dissipation: 27W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 13.1mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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| UJ4SC075018B7S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 259W
Case: TO263-7
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 52A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 259W
Case: TO263-7
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| UJ4SC075018L8S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 53A
Pulsed drain current: 208A
Power dissipation: 349W
Case: H-PDSO-F8
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 53A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 53A
Pulsed drain current: 208A
Power dissipation: 349W
Case: H-PDSO-F8
Gate-source voltage: -25...25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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| 1N4936 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59-10,DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| BC638TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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| UJ3D1725K2 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1700V
Max. forward impulse current: 163A
Power dissipation: 69.8W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 25A; TO247-2; 69.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 25A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1700V
Max. forward impulse current: 163A
Power dissipation: 69.8W
Kind of package: tube
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| MMBF5457 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 1988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.12 грн |
| 33+ | 12.89 грн |
| 100+ | 11.89 грн |
| 250+ | 11.31 грн |
| 500+ | 10.23 грн |
| 1000+ | 9.81 грн |
| MMSZ5226CT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
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| MC33152VDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 68.96 грн |
| NTP095N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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| NTP095N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| NVB095N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTHL095N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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| NTHL095N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| NTMT095N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF095N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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| FQD13N10TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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| FOD3182 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
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| FOD3180 |
|
Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
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| FOD3180TV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
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| FOD3182SDV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
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| 1N4004 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
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| MM3Z4V7T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.27 грн |
| 88+ | 4.99 грн |
| BSR58 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
на замовлення 902 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.76 грн |
| 21+ | 19.96 грн |
| 50+ | 11.89 грн |
| 100+ | 10.23 грн |
| 500+ | 7.40 грн |
| CS51414EDR8G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.52 грн |
| 10+ | 108.94 грн |
| 25+ | 99.79 грн |
| 50+ | 98.96 грн |
| NCP160BFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
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| NCP160AFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
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| NCP161AFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
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| NCP161BFCS514T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
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| NCV1117DT50RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NXH240B120H3Q1P1G |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
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| FDD86252 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
на замовлення 2327 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.23 грн |
| 10+ | 64.87 грн |
| 25+ | 62.37 грн |
| 100+ | 56.55 грн |
| 250+ | 54.06 грн |
| FDS6673BZ | |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.81 грн |
| 10+ | 57.63 грн |
| 25+ | 51.56 грн |
| 100+ | 43.24 грн |
| 250+ | 38.50 грн |
| 500+ | 37.92 грн |
| FDMC8651 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
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| DTA123EET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123EM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123JET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
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| MBRF30H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.93V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.93V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.68 грн |
| 10+ | 86.49 грн |
| 50+ | 72.35 грн |
| MBR30H100CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
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| MBR30H100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
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| NRVB30H100MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
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| NRVB30H100MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
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| SB540 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
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| SZBZX84C10LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C10ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| STD5406NT4G-VF01 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 150A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 150A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NXH003P120M3F2PTHG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
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| NXH003P120M3F2PTNG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
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| NXH007F120M3F2PTHG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Case: PIM34
Mechanical mounting: screw
Topology: H-bridge
Technology: SiC
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Drain-source voltage: 1.2kV
Pulsed drain current: 447A
Drain current: 149A
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Power dissipation: 353W
Semiconductor structure: transistor/transistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Case: PIM34
Mechanical mounting: screw
Topology: H-bridge
Technology: SiC
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Drain-source voltage: 1.2kV
Pulsed drain current: 447A
Drain current: 149A
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Power dissipation: 353W
Semiconductor structure: transistor/transistor
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| NXH008T120M3F2PTHG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
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| NXH011F120M3F2PTHG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
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| NXH011T120M3F2PTHG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
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| NXH400N100H4Q2F2PG |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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| M74HCT4852ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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