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Фото Назва Виробник Інформація Доступність
Ціна
P6KE100CA P6KE100CA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588AE3CB11BC2E469&compId=P6KE100CA.pdf?ci_sign=56df8edde414d78572ad8af1c67e796f6e15ff8c Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
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NCP1054ST100T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.53A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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SS38 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
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FSQ0165RLX ONSEMI FAIR-S-A0001818196-1.pdf?t.download=true&u=5oefqw fsq0365-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 900mA; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.9A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 10Ω
Power: 13W
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FSQ0165RN FSQ0165RN ONSEMI fsq0365-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 900mA; 650V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.9A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 10Ω
Power: 13W
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1N4148-T50R 1N4148-T50R ONSEMI 1n914-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
148+2.95 грн
250+1.61 грн
348+1.16 грн
500+0.98 грн
Мінімальне замовлення: 148
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MBR1H100SFT3G ONSEMI mbr1h100sf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
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2V7002KT1G 2V7002KT1G ONSEMI 2n7002k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 997 шт:
термін постачання 21-30 дні (днів)
72+6.08 грн
90+4.52 грн
106+3.81 грн
500+1.86 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
J211-D74Z J211-D74Z ONSEMI J210-12%2CMMBFJ210-12.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 7mA; 0.35W; TO92; Igt: 10mA
Gate-source voltage: -25V
Drain current: 7mA
Gate current: 10mA
Power dissipation: 0.35W
Kind of package: Ammo Pack
Polarisation: unipolar
Mounting: THT
Type of transistor: N-JFET
Case: TO92
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MJ21195G ONSEMI mj21195-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Power dissipation: 250W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Kind of package: in-tray
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO3
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MJE182G MJE182G ONSEMI MJE172G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
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FGB3040G2-F085C ONSEMI fgx3040g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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MBRB20H100CTT4G ONSEMI mbr20h100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.73V
Max. load current: 10A
Max. forward impulse current: 250A
Kind of package: reel; tape
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NXH450B100H4Q2F2PG ONSEMI nxh450b100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
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1SMA5931BT3G 1SMA5931BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 918 шт:
термін постачання 21-30 дні (днів)
20+21.72 грн
27+15.09 грн
50+10.97 грн
100+9.60 грн
250+7.99 грн
500+7.10 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SZ1SMA5931BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FQT13N06TF FQT13N06TF ONSEMI fqt13n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
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FQT13N06LTF FQT13N06LTF ONSEMI fqt13n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
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FQPF13N06L FQPF13N06L ONSEMI fqpf13n06l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 7.1A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
Polarisation: unipolar
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NCP702SN33T1G ONSEMI ncp702-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCP702SN30T1G ONSEMI ncp702-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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FDC640P FDC640P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE3841FF295E28&compId=FDC640P.pdf?ci_sign=e62acd6897641b8745afb63ed3ad2ad103632860 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 13nC
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
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FDC6303N FDC6303N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE0F75C557BE28&compId=FDC6303N.pdf?ci_sign=1d586807abcac5c816657450307e9ea2e72e5c87 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
10+45.18 грн
14+30.33 грн
50+20.41 грн
100+17.18 грн
250+13.88 грн
500+12.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FDC6327C FDC6327C ONSEMI fdc6327c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1732 шт:
термін постачання 21-30 дні (днів)
7+66.90 грн
10+50.10 грн
50+37.35 грн
100+32.59 грн
500+24.61 грн
1000+22.35 грн
1500+21.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDC655BN FDC655BN ONSEMI FDC655BN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
12+39.10 грн
15+27.75 грн
50+20.25 грн
100+17.51 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FDC653N FDC653N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE3B8B1706DE28&compId=FDC653N.pdf?ci_sign=35c36290ed188157eb81f3277826b6f37045f50a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)
15+30.41 грн
25+26.38 грн
100+24.77 грн
500+23.80 грн
Мінімальне замовлення: 15
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FDC6326L ONSEMI fdc6326l-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.125Ω
Number of channels: 1
Output current: 1.8A
Control voltage: 2.5...8V DC
Supply voltage: 3...20V DC
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NTGS4111PT1G ONSEMI ntgs4111p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: P-MOSFET
Case: TSOP6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 60mΩ
Kind of channel: enhancement
Power dissipation: 1.25W
Gate-source voltage: ±20V
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FDD8880 FDD8880 ONSEMI FDD8880-D.PDF 64b0486c2f3a4a516ccac44ee08f9abc.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)
6+77.33 грн
7+63.90 грн
10+56.72 грн
50+36.39 грн
100+29.85 грн
500+28.08 грн
Мінімальне замовлення: 6
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FDD8876 FDD8876 ONSEMI FDD%2CFDU8876.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2031 шт:
термін постачання 21-30 дні (днів)
7+63.42 грн
8+55.67 грн
25+52.44 грн
100+50.83 грн
Мінімальне замовлення: 7
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NCV8752BMX18TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV8752BMX28TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MBRS190T3G MBRS190T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDE98BC9B6CFA8&compId=MBRS190T3G-DTE.PDF?ci_sign=6de0e8a819e2919bbd902030ef5b7d0049c9bac9 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
на замовлення 1352 шт:
термін постачання 21-30 дні (днів)
16+28.67 грн
19+22.27 грн
20+20.57 грн
50+17.02 грн
100+15.41 грн
500+11.86 грн
1000+11.78 грн
Мінімальне замовлення: 16
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MM74HCT541MTC MM74HCT541MTC ONSEMI FAIRS24758-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
5+92.10 грн
10+41.39 грн
25+37.51 грн
75+33.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MM74HCT541WM MM74HCT541WM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDC613E0508745&compId=MM74HCT541.pdf?ci_sign=8c05d150340de01a0af7599dba3aad963ad78f11 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
Manufacturer series: HCT
на замовлення 131 шт:
термін постачання 21-30 дні (днів)
5+97.31 грн
10+53.09 грн
25+38.24 грн
38+35.98 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74HCT541ADWG MC74HCT541ADWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADACA0D3&compId=MC74HCT541A-D.pdf?ci_sign=691c79a0c0361597893cc799d332b6f01c297db6 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
на замовлення 227 шт:
термін постачання 21-30 дні (днів)
7+69.51 грн
10+45.99 грн
25+41.95 грн
38+41.14 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC74VHCT541ADWG MC74VHCT541ADWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63425305720D3&compId=MC74VHCT541A-D.pdf?ci_sign=0ccf27ca1e9c10a0cfb49a922cf36b7db2cfe683 Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS,TTL; SMD; SO20WB; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Family: VHCT
Manufacturer series: VHCT
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
5+92.10 грн
10+58.09 грн
25+50.02 грн
38+46.79 грн
114+40.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74HCT541ADWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADADE0D3&compId=MC74HCT541A-D.pdf?ci_sign=87c977aa03e4549167b1973ecded9dc34ae66e56 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
товару немає в наявності
В кошику  од. на суму  грн.
MM74HCT541WMX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634A970CE40D3&compId=MM74HCT541-D.pdf?ci_sign=21b2fde7088b58534466c1e25633ee9e829e7ff0 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
товару немає в наявності
В кошику  од. на суму  грн.
MC74HCT541ADTR2G MC74HCT541ADTR2G ONSEMI mc74hct541a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Manufacturer series: HCT
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В кошику  од. на суму  грн.
MM74HCT541MTCX MM74HCT541MTCX ONSEMI mm74hct541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
товару немає в наявності
В кошику  од. на суму  грн.
MC74VHCT541ADTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634253055E0D3&compId=MC74VHCT541A-D.pdf?ci_sign=3ee31107c738dd54a62943e00bbf02b283f22f3e Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Family: VHCT
Manufacturer series: VHCT
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В кошику  од. на суму  грн.
MC74VHCT541ADTRG MC74VHCT541ADTRG ONSEMI mc74vhct541a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
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В кошику  од. на суму  грн.
MJ11012G MJ11012G ONSEMI MJ11012G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 30A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 30A
Kind of transistor: Darlington
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В кошику  од. на суму  грн.
NCV7805BDTRKG ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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В кошику  од. на суму  грн.
NCV7805BD2TR4G ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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В кошику  од. на суму  грн.
GRULM317LBDR2G ONSEMI Category: Unclassified
Description: GRULM317LBDR2G
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
2500+11.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NTD6414ANT4G ONSEMI ntd6414an-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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SS14 SS14 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
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В кошику  од. на суму  грн.
NCP380HSN05AAT1G NCP380HSN05AAT1G ONSEMI ncp380-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Number of channels: 1
Mounting: SMD
Active logical level: high
Case: TSOP5
Kind of package: reel; tape
Kind of output: P-Channel
Control voltage: 0...5.5V DC
On-state resistance: 135mΩ
Output current: 0.5A
Supply voltage: 2.5...5.5V DC
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
7+63.42 грн
11+38.72 грн
25+32.19 грн
100+23.96 грн
250+23.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCP308SN180T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Case: TSOP6
Operating temperature: -40...125°C
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Supply voltage: 1.6...5.5V DC
Threshold on-voltage: 1.67V
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MJF18008G ONSEMI mje18008-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Type of transistor: NPN
Mounting: THT
Case: TO220FP
Power dissipation: 45W
Collector current: 8A
Current gain: 14...34
Collector-emitter voltage: 450V
Frequency: 13MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
3+169.42 грн
10+141.99 грн
50+124.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MMBF2201NT1G MMBF2201NT1G ONSEMI mmbf2201nt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Pulsed drain current: 750A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
21+20.85 грн
25+16.14 грн
29+14.28 грн
50+10.08 грн
100+8.63 грн
500+6.70 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
NCP130AMX210TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130BMX210TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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MMBF4392 ONSEMI MMBF4392.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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MBR140ESFT1G ONSEMI mbr140esf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
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ESD7104MUTAG ONSEMI esd7104-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: HDMI; USB
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
12+39.10 грн
15+27.43 грн
75+21.22 грн
100+20.41 грн
300+18.31 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NCV8403ASTT1G NCV8403ASTT1G ONSEMI ncv8403-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 123mΩ
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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FDMQ8403 ONSEMI fdmq8403-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x4
Kind of package: reel; tape
Case: WDFN12
Drain-source voltage: 100V
Pulsed drain current: 12A
Drain current: 6A
Gate charge: 5nC
On-state resistance: 191mΩ
Power dissipation: 17W
Gate-source voltage: ±20V
Polarisation: unipolar
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P6KE100CA pVersion=0046&contRep=ZT&docId=005056AB752F1EE588AE3CB11BC2E469&compId=P6KE100CA.pdf?ci_sign=56df8edde414d78572ad8af1c67e796f6e15ff8c
P6KE100CA
Виробник: ONSEMI
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
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NCP1054ST100T3G ncp1050-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.53A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
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SS38 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
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FSQ0165RLX FAIR-S-A0001818196-1.pdf?t.download=true&u=5oefqw fsq0365-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 900mA; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.9A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 10Ω
Power: 13W
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FSQ0165RN fsq0365-d.pdf
FSQ0165RN
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 900mA; 650V; 67kHz; Ch: 1; DIP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.9A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 10Ω
Power: 13W
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1N4148-T50R 1n914-d.pdf
1N4148-T50R
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
на замовлення 656 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
148+2.95 грн
250+1.61 грн
348+1.16 грн
500+0.98 грн
Мінімальне замовлення: 148
В кошику  од. на суму  грн.
MBR1H100SFT3G mbr1h100sf-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
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2V7002KT1G 2n7002k-d.pdf
2V7002KT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 997 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.08 грн
90+4.52 грн
106+3.81 грн
500+1.86 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
J211-D74Z J210-12%2CMMBFJ210-12.pdf
J211-D74Z
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 7mA; 0.35W; TO92; Igt: 10mA
Gate-source voltage: -25V
Drain current: 7mA
Gate current: 10mA
Power dissipation: 0.35W
Kind of package: Ammo Pack
Polarisation: unipolar
Mounting: THT
Type of transistor: N-JFET
Case: TO92
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MJ21195G mj21195-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Power dissipation: 250W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Kind of package: in-tray
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO3
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MJE182G MJE172G.PDF
MJE182G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
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FGB3040G2-F085C fgx3040g2-f085c-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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MBRB20H100CTT4G mbr20h100ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.73V
Max. load current: 10A
Max. forward impulse current: 250A
Kind of package: reel; tape
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NXH450B100H4Q2F2PG nxh450b100h4q2f2-d.pdf
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
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1SMA5931BT3G 1SMA59xxBT3.PDF
1SMA5931BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 918 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.72 грн
27+15.09 грн
50+10.97 грн
100+9.60 грн
250+7.99 грн
500+7.10 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SZ1SMA5931BT3G 1SMA59xxBT3.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 18V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FQT13N06TF fqt13n06-d.pdf
FQT13N06TF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
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FQT13N06LTF fqt13n06l-d.pdf
FQT13N06LTF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2.24A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 11.2A
Polarisation: unipolar
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FQPF13N06L fqpf13n06l-d.pdf
FQPF13N06L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 7.1A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 40A
Polarisation: unipolar
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NCP702SN33T1G ncp702-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCP702SN30T1G ncp702-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.2A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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FDC640P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE3841FF295E28&compId=FDC640P.pdf?ci_sign=e62acd6897641b8745afb63ed3ad2ad103632860
FDC640P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 13nC
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate-source voltage: ±12V
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
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FDC6303N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE0F75C557BE28&compId=FDC6303N.pdf?ci_sign=1d586807abcac5c816657450307e9ea2e72e5c87
FDC6303N
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+45.18 грн
14+30.33 грн
50+20.41 грн
100+17.18 грн
250+13.88 грн
500+12.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FDC6327C fdc6327c-d.pdf
FDC6327C
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1732 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.90 грн
10+50.10 грн
50+37.35 грн
100+32.59 грн
500+24.61 грн
1000+22.35 грн
1500+21.22 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDC655BN FDC655BN.pdf
FDC655BN
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+39.10 грн
15+27.75 грн
50+20.25 грн
100+17.51 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FDC653N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE3B8B1706DE28&compId=FDC653N.pdf?ci_sign=35c36290ed188157eb81f3277826b6f37045f50a
FDC653N
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+30.41 грн
25+26.38 грн
100+24.77 грн
500+23.80 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
FDC6326L fdc6326l-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.125Ω
Number of channels: 1
Output current: 1.8A
Control voltage: 2.5...8V DC
Supply voltage: 3...20V DC
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NTGS4111PT1G ntgs4111p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Polarisation: unipolar
Kind of package: reel; tape
Type of transistor: P-MOSFET
Case: TSOP6
Mounting: SMD
Drain-source voltage: -30V
Drain current: -2.7A
On-state resistance: 60mΩ
Kind of channel: enhancement
Power dissipation: 1.25W
Gate-source voltage: ±20V
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FDD8880 FDD8880-D.PDF 64b0486c2f3a4a516ccac44ee08f9abc.pdf
FDD8880
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.33 грн
7+63.90 грн
10+56.72 грн
50+36.39 грн
100+29.85 грн
500+28.08 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDD8876 FDD%2CFDU8876.pdf
FDD8876
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2031 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.42 грн
8+55.67 грн
25+52.44 грн
100+50.83 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCV8752BMX18TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV8752BMX28TCG ncv8752-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MBRS190T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDE98BC9B6CFA8&compId=MBRS190T3G-DTE.PDF?ci_sign=6de0e8a819e2919bbd902030ef5b7d0049c9bac9
MBRS190T3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
на замовлення 1352 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.67 грн
19+22.27 грн
20+20.57 грн
50+17.02 грн
100+15.41 грн
500+11.86 грн
1000+11.78 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
MM74HCT541MTC FAIRS24758-1.pdf?t.download=true&u=5oefqw
MM74HCT541MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+92.10 грн
10+41.39 грн
25+37.51 грн
75+33.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MM74HCT541WM pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDC613E0508745&compId=MM74HCT541.pdf?ci_sign=8c05d150340de01a0af7599dba3aad963ad78f11
MM74HCT541WM
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 80µA
Manufacturer series: HCT
на замовлення 131 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+97.31 грн
10+53.09 грн
25+38.24 грн
38+35.98 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74HCT541ADWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADACA0D3&compId=MC74HCT541A-D.pdf?ci_sign=691c79a0c0361597893cc799d332b6f01c297db6
MC74HCT541ADWG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
на замовлення 227 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+69.51 грн
10+45.99 грн
25+41.95 грн
38+41.14 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MC74VHCT541ADWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63425305720D3&compId=MC74VHCT541A-D.pdf?ci_sign=0ccf27ca1e9c10a0cfb49a922cf36b7db2cfe683
MC74VHCT541ADWG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS,TTL; SMD; SO20WB; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Family: VHCT
Manufacturer series: VHCT
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+92.10 грн
10+58.09 грн
25+50.02 грн
38+46.79 грн
114+40.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MC74HCT541ADWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADADE0D3&compId=MC74HCT541A-D.pdf?ci_sign=87c977aa03e4549167b1973ecded9dc34ae66e56
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
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MM74HCT541WMX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634A970CE40D3&compId=MM74HCT541-D.pdf?ci_sign=21b2fde7088b58534466c1e25633ee9e829e7ff0
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Manufacturer series: HCT
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MC74HCT541ADTR2G mc74hct541a-d.pdf
MC74HCT541ADTR2G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Manufacturer series: HCT
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MM74HCT541MTCX mm74hct541-d.pdf
MM74HCT541MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
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MC74VHCT541ADTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634253055E0D3&compId=MC74VHCT541A-D.pdf?ci_sign=3ee31107c738dd54a62943e00bbf02b283f22f3e
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Family: VHCT
Manufacturer series: VHCT
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MC74VHCT541ADTRG mc74vhct541a-d.pdf
MC74VHCT541ADTRG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: VHCT
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MJ11012G MJ11012G.PDF
MJ11012G
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 30A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector-emitter voltage: 60V
Collector current: 30A
Kind of transistor: Darlington
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NCV7805BDTRKG mc7800-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV7805BD2TR4G mc7800-d.pdf
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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GRULM317LBDR2G
Виробник: ONSEMI
Category: Unclassified
Description: GRULM317LBDR2G
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+11.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NTD6414ANT4G ntd6414an-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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SS14 SSxx.pdf
SS14
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
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NCP380HSN05AAT1G ncp380-d.pdf
NCP380HSN05AAT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Number of channels: 1
Mounting: SMD
Active logical level: high
Case: TSOP5
Kind of package: reel; tape
Kind of output: P-Channel
Control voltage: 0...5.5V DC
On-state resistance: 135mΩ
Output current: 0.5A
Supply voltage: 2.5...5.5V DC
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+63.42 грн
11+38.72 грн
25+32.19 грн
100+23.96 грн
250+23.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCP308SN180T1G ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: power on reset monitor (PoR)
Case: TSOP6
Operating temperature: -40...125°C
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Supply voltage: 1.6...5.5V DC
Threshold on-voltage: 1.67V
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MJF18008G mje18008-d.pdf
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Type of transistor: NPN
Mounting: THT
Case: TO220FP
Power dissipation: 45W
Collector current: 8A
Current gain: 14...34
Collector-emitter voltage: 450V
Frequency: 13MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+169.42 грн
10+141.99 грн
50+124.24 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MMBF2201NT1G mmbf2201nt1-d.pdf
MMBF2201NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 240mA; Idm: 750A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.24A
Pulsed drain current: 750A
Power dissipation: 0.15W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.85 грн
25+16.14 грн
29+14.28 грн
50+10.08 грн
100+8.63 грн
500+6.70 грн
Мінімальне замовлення: 21
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NCP130AMX210TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NCP130BMX210TCG ncp130-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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MMBF4392 MMBF4392.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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MBR140ESFT1G mbr140esf-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
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ESD7104MUTAG esd7104-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: HDMI; USB
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+39.10 грн
15+27.43 грн
75+21.22 грн
100+20.41 грн
300+18.31 грн
Мінімальне замовлення: 12
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NCV8403ASTT1G ncv8403-d.pdf
NCV8403ASTT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 15A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 123mΩ
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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FDMQ8403 fdmq8403-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x4
Kind of package: reel; tape
Case: WDFN12
Drain-source voltage: 100V
Pulsed drain current: 12A
Drain current: 6A
Gate charge: 5nC
On-state resistance: 191mΩ
Power dissipation: 17W
Gate-source voltage: ±20V
Polarisation: unipolar
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