| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MJB44H11T4G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSE44H11 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N3442G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 10A Power dissipation: 117W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 800kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FQPF11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC14520BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: binary up counter Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Number of inputs: 3 Family: HEF4000B |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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NCV333ASN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5 Type of integrated circuit: operational amplifier Bandwidth: 350kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.15V/μs Integrated circuit features: zero-drift Input offset voltage: 30µV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 400pA |
на замовлення 2814 шт: термін постачання 14-30 дні (днів) |
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| KA1M0565RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 2.2Ω Duty cycle factor: 74...80% Kind of package: tube Power: 140W Operating voltage: 10...25V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC858CLT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Frequency: 100MHz Current gain: 420...800 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BC858CDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Mounting: SMD Frequency: 100MHz Current gain: 420...800 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BC858CLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74VHC4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N4933G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4933RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 300ns Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDA24N40F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN Gate-source voltage: ±30V Pulsed drain current: 92A Power dissipation: 235W Drain-source voltage: 400V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO3PN Kind of package: tube Polarisation: unipolar Gate charge: 60nC On-state resistance: 0.19Ω Drain current: 13.8A |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
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| SMF05T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; ESD; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6...7.2V Max. forward impulse current: 1A Peak pulse power dissipation: 0.2kW Semiconductor structure: common anode Version: ESD Mounting: SMD Case: SC88A Max. off-state voltage: 5V Leakage current: 5µA Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMUN2111LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
на замовлення 16844 шт: термін постачання 14-30 дні (днів) |
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SMMUN2111LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 1520 шт: термін постачання 14-30 дні (днів) |
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MMUN2111LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMMUN2111LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC34151DR2G | ONSEMI |
Category: Gates, inverters Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: -1.5...1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 14ns Pulse fall time: 16ns Maximum output current: 1.5A Supply voltage: 6.5...18V Kind of output: MOSFET driver Power dissipation: 0.56W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| GBPC3506W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5242B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: bulk |
на замовлення 2676 шт: термін постачання 14-30 дні (днів) |
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1N5242BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: reel; tape |
на замовлення 835 шт: термін постачання 14-30 дні (днів) |
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| 1N5247BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 17V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1N5240BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; reel,tape; CASE017AG; single diode Mounting: THT Tolerance: ±5% Case: CASE017AG Kind of package: reel; tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Manufacturer series: 1N52xxB Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5243B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5243BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1N5240B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5241BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5242B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5244B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5244BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5246BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5249BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 19V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NST489AMT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6 Mounting: SMD Case: TSOP6 Power dissipation: 0.535W Polarisation: bipolar Type of transistor: NPN Current gain: 300...900 Kind of package: reel; tape Frequency: 200MHz Collector current: 2A Collector-emitter voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FMBA14 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.7W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Frequency: 1.25MHz |
на замовлення 1423 шт: термін постачання 14-30 дні (днів) |
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| NSBA144EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA143EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963 Case: SOT963 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 269mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA143EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA143EF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA143TDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA143TF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA144EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ Case: SOT963 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 269mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA144TF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 120...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA144WDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSBA144WF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 297mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
NRVBA140NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. forward impulse current: 30A Kind of package: reel; tape Max. load current: 2A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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|
BAS31 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Semiconductor structure: double series Case: SOT23 Capacitance: 35pF Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Max. forward voltage: 1.25V Power dissipation: 0.35W Max. off-state voltage: 120V Load current: 0.2A Kind of package: reel; tape |
на замовлення 192 шт: термін постачання 14-30 дні (днів) |
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BAS35 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Semiconductor structure: common anode; double Case: SOT23 Capacitance: 35pF Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 2A Max. forward voltage: 1.25V Power dissipation: 0.35W Max. off-state voltage: 120V Load current: 0.2A Kind of package: reel; tape |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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BAS31-D87Z | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 200mA; 50ns; SOT23; Ufmax: 1V Mounting: SMD Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Max. forward impulse current: 0.2A Max. forward voltage: 1V Max. off-state voltage: 120V Load current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
MC74HC540ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 8 Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Technology: CMOS; TTL Quiescent current: 160µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC540ADWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 8 Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Technology: CMOS; TTL Quiescent current: 160µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MM74HC540MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: tube Number of channels: 8 Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Technology: CMOS Quiescent current: 160µA |
товару немає в наявності |
Мінімальне замовлення: 1825 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC540MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 8 Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Technology: CMOS Quiescent current: 160µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
MJE15030 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
|
MJE15030G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 473 шт: термін постачання 14-30 дні (днів) |
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MC14066BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO16; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 30µA Number of inputs: 4 Supply voltage: 3...18V DC Kind of integrated circuit: multiplexer Type of integrated circuit: analog switch Technology: CMOS Case: SO16 Number of channels: 4 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC14060BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Technology: CMOS Mounting: SMD Case: SO16 Family: HEF4000B |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| MJB44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
| KSE44H11 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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В кошику
од. на суму грн.
| NJW44H11G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
товару немає в наявності
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од. на суму грн.
| NJVMJB44H11T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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В кошику
од. на суму грн.
| 2N3442G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
товару немає в наявності
В кошику
од. на суму грн.
| FQPF11N40C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC14520BDWR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Number of inputs: 3
Family: HEF4000B
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Number of inputs: 3
Family: HEF4000B
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NCV333ASN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
на замовлення 2814 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.01 грн |
| 12+ | 36.57 грн |
| 13+ | 32.78 грн |
| 25+ | 28.50 грн |
| 50+ | 26.68 грн |
| KA1M0565RYDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 74...80%
Kind of package: tube
Power: 140W
Operating voltage: 10...25V DC
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| BC858CLT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
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| BC858CDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
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| BC858CLT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MC74VHC4051DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 1N4933G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| 1N4933RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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| FDA24N40F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Gate-source voltage: ±30V
Pulsed drain current: 92A
Power dissipation: 235W
Drain-source voltage: 400V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO3PN
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.19Ω
Drain current: 13.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Gate-source voltage: ±30V
Pulsed drain current: 92A
Power dissipation: 235W
Drain-source voltage: 400V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO3PN
Kind of package: tube
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 0.19Ω
Drain current: 13.8A
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.98 грн |
| 10+ | 214.13 грн |
| SMF05T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; ESD; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Version: ESD
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.2V; 1A; 200W; common anode; ESD; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...7.2V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.2kW
Semiconductor structure: common anode
Version: ESD
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Leakage current: 5µA
Number of channels: 4
Kind of package: reel; tape
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| MMUN2111LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
на замовлення 16844 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.87 грн |
| 74+ | 5.60 грн |
| 109+ | 3.80 грн |
| 129+ | 3.20 грн |
| 250+ | 2.52 грн |
| 500+ | 2.08 грн |
| 1000+ | 1.72 грн |
| 3000+ | 1.24 грн |
| 6000+ | 1.00 грн |
| SMMUN2111LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 1520 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 69+ | 6.01 грн |
| 116+ | 3.57 грн |
| 500+ | 2.88 грн |
| MMUN2111LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SMMUN2111LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MC34151DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Kind of output: MOSFET driver
Power dissipation: 0.56W
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Kind of output: MOSFET driver
Power dissipation: 0.56W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GBPC3506W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| 1N5242B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
на замовлення 2676 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 125+ | 3.29 грн |
| 230+ | 1.80 грн |
| 258+ | 1.60 грн |
| 500+ | 1.49 грн |
| 1000+ | 1.41 грн |
| 2000+ | 1.34 грн |
| 1N5242BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: reel; tape
на замовлення 835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.10 грн |
| 90+ | 4.61 грн |
| 109+ | 3.79 грн |
| 225+ | 1.84 грн |
| 247+ | 1.67 грн |
| 500+ | 1.52 грн |
| 1N5247BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 17V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 1N5240BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; reel,tape; CASE017AG; single diode
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Manufacturer series: 1N52xxB
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; reel,tape; CASE017AG; single diode
Mounting: THT
Tolerance: ±5%
Case: CASE017AG
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Manufacturer series: 1N52xxB
Semiconductor structure: single diode
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В кошику
од. на суму грн.
| 1N5243B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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В кошику
од. на суму грн.
| 1N5243BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 1N5240B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5241BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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В кошику
од. на суму грн.
| 1N5242B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
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В кошику
од. на суму грн.
| 1N5244B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
товару немає в наявності
В кошику
од. на суму грн.
| 1N5244BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 14V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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В кошику
од. на суму грн.
| 1N5246BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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В кошику
од. на суму грн.
| 1N5249BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 19V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 19V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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В кошику
од. на суму грн.
| NST489AMT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Power dissipation: 0.535W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 300...900
Kind of package: reel; tape
Frequency: 200MHz
Collector current: 2A
Collector-emitter voltage: 30V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Power dissipation: 0.535W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 300...900
Kind of package: reel; tape
Frequency: 200MHz
Collector current: 2A
Collector-emitter voltage: 30V
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од. на суму грн.
| FMBA14 |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.25MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.25MHz
на замовлення 1423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 209+ | 2.13 грн |
| 220+ | 1.88 грн |
| 228+ | 1.81 грн |
| 500+ | 1.72 грн |
| NSBA144EDXV6T1G |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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од. на суму грн.
| NSBA143EDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143EF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143TDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA143TF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144EDP6T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144TF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144WDXV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NSBA144WF3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
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| NRVBA140NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
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| BAS31 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: double series
Case: SOT23
Capacitance: 35pF
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 120V
Load current: 0.2A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: double series
Case: SOT23
Capacitance: 35pF
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 120V
Load current: 0.2A
Kind of package: reel; tape
на замовлення 192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.51 грн |
| 36+ | 11.53 грн |
| 41+ | 10.21 грн |
| 50+ | 8.73 грн |
| 100+ | 6.01 грн |
| BAS35 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: common anode; double
Case: SOT23
Capacitance: 35pF
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 120V
Load current: 0.2A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Semiconductor structure: common anode; double
Case: SOT23
Capacitance: 35pF
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 120V
Load current: 0.2A
Kind of package: reel; tape
на замовлення 461 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.30 грн |
| 36+ | 11.69 грн |
| 40+ | 10.54 грн |
| 44+ | 9.39 грн |
| 100+ | 8.15 грн |
| 250+ | 7.58 грн |
| BAS31-D87Z |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 200mA; 50ns; SOT23; Ufmax: 1V
Mounting: SMD
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Max. off-state voltage: 120V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 200mA; 50ns; SOT23; Ufmax: 1V
Mounting: SMD
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Max. forward impulse current: 0.2A
Max. forward voltage: 1V
Max. off-state voltage: 120V
Load current: 0.2A
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| MC74HC540ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
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Мінімальне замовлення: 2500 шт
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| MC74HC540ADWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
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Мінімальне замовлення: 3000 шт
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| MM74HC540MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 160µA
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Мінімальне замовлення: 1825 шт
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| MM74HC540MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 8
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Technology: CMOS
Quiescent current: 160µA
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Мінімальне замовлення: 2500 шт
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| MJE15030 |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MJE15030G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 473 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 128.61 грн |
| 10+ | 68.36 грн |
| MC14066BDR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO16; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of integrated circuit: multiplexer
Type of integrated circuit: analog switch
Technology: CMOS
Case: SO16
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO16; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 30µA
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of integrated circuit: multiplexer
Type of integrated circuit: analog switch
Technology: CMOS
Case: SO16
Number of channels: 4
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Мінімальне замовлення: 2500 шт
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| MC14060BDR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.