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NVB099N65S3 ONSEMI nvb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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NTHL019N65S3H ONSEMI nthl019n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 ONSEMI fcmt099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 75A
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FCPF099N65S3 ONSEMI fcpf099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Pulsed drain current: 75A
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NTZD5110NT1G NTZD5110NT1G ONSEMI ntzd5110n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BYW80-200G BYW80-200G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Reverse recovery time: 35ns
на замовлення 1360 шт:
термін постачання 21-30 дні (днів)
8+57.40 грн
10+45.34 грн
Мінімальне замовлення: 8
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NCP1336BDR2G NCP1336BDR2G ONSEMI ncp1336-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
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NCP1338DR2G ONSEMI ncp1338-d.pdf ONSM-S-A0011139603-1.pdf?t.download=true&u=ovmfp3 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
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MJE15029G MJE15029G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Collector current: 8A
Power dissipation: 50W
Collector-emitter voltage: 120V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
3+142.39 грн
10+111.37 грн
11+90.69 грн
29+85.91 грн
Мінімальне замовлення: 3
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LMV931SN3T1G ONSEMI lmv931-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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LMV931SQ3T2G ONSEMI lmv931-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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NCP163ASN330T1G NCP163ASN330T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
на замовлення 1349 шт:
термін постачання 21-30 дні (днів)
15+29.98 грн
18+22.91 грн
20+20.36 грн
25+17.50 грн
66+14.16 грн
182+13.36 грн
Мінімальне замовлення: 15
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NB3M8302CDR2G NB3M8302CDR2G ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
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NB3M8302CDG ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
98+160.20 грн
196+133.64 грн
Мінімальне замовлення: 98
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SZMMSZ4680T1G SZMMSZ4680T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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NTLJF3117PT1G ONSEMI ntljf3117p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMT064N65S3H ONSEMI ntmt064n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN5211T1G MUN5211T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C2091FB92040CE&compId=MUN2211.PDF?ci_sign=414c3c3e3685fa2f362efb0e2f3ec37af6d380b4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 544 шт:
термін постачання 21-30 дні (днів)
42+10.28 грн
65+6.20 грн
105+3.80 грн
500+2.77 грн
Мінімальне замовлення: 42
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SMUN5211T1G SMUN5211T1G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
38+10.34 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
MUN5211DW1T1G MUN5211DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1455BDF25C0CE&compId=MUN5211DW1.PDF?ci_sign=3cf432a5e8d799c49791300d0639c0541b0793dd Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Current gain: 60
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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SMUN5211DW1T1G SMUN5211DW1T1G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SMUN5211T3G SMUN5211T3G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NSVMUN5211DW1T2G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 35...60
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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MELSMUN5211T3G ONSEMI Category: Unclassified
Description: MELSMUN5211T3G
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
10000+2.66 грн
Мінімальне замовлення: 10000
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VEOSMUN5211T1G ONSEMI Category: Unclassified
Description: VEOSMUN5211T1G
на замовлення 81000 шт:
термін постачання 21-30 дні (днів)
6000+1.17 грн
Мінімальне замовлення: 6000
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MC74LVX573DTG MC74LVX573DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB036680D3&compId=MC74LVX573-D.pdf?ci_sign=387d5e6055f2989f2b0e3d704ad1a8ef93aa8da2 Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
5+95.95 грн
10+53.22 грн
25+37.79 грн
69+35.72 грн
150+34.37 грн
Мінімальне замовлення: 5
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MC74LVX573DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB0367C0D3&compId=MC74LVX573-D.pdf?ci_sign=e276c4a6d63eaf6621406c4b95ad6ef8f041d6c1 Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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NCP431BISNT1G NCP431BISNT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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NCP432BISNT1G NCP432BISNT1G ONSEMI ncp431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G MJ11033G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD07A9B690C2469&compId=MJ11032G.PDF?ci_sign=7f6b0e43d6d7b9d29a2a21851b22e79b9d1bb499 description Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: PNP
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 120V
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
1+793.29 грн
2+716.74 грн
4+677.76 грн
10+650.71 грн
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1SMB5940BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Case: SMB
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SZ1SMB5940BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Case: SMB
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NCP1397ADR2G NCP1397ADR2G ONSEMI ncp1397-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
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MUN5235T1G MUN5235T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE88FAAC1C7779EB3D2&compId=mun2235.pdf?ci_sign=acd83ed011384d5d85e267c949aaa1af22e5d958 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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74AC04MTCX 74AC04MTCX ONSEMI 74ACT04-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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74AC04SCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A72440D3&compId=74ACT04-D.pdf?ci_sign=b17e55d78a46ae3e5863f355d403b04d7efb3c83 Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
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1SMA5932BT3G 1SMA5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2987 шт:
термін постачання 21-30 дні (днів)
18+23.99 грн
21+19.33 грн
50+14.56 грн
100+12.65 грн
113+8.27 грн
310+7.88 грн
2000+7.56 грн
Мінімальне замовлення: 18
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SZ1SMA5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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LP2951CD-3.0R2G ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV2951ACD3.3R2G ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV2951ACDR2G ONSEMI lp2950-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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SZBZX84B6V8LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Leakage current: 2µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: BZX84B
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
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FDPC8011S ONSEMI fdpc8011s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDPC8012S ONSEMI fdpc8012s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDPC8013S ONSEMI fdpc8013s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDPC8016S ONSEMI fdpc8016s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDD13AN06A0-F085 ONSEMI fdd13an06_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC008N08C ONSEMI fdmc008n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FPDB40PH60B ONSEMI fpdb40ph60b-d.pdf Category: Unclassified
Description: FPDB40PH60B
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
10+1325.29 грн
30+1107.33 грн
Мінімальне замовлення: 10
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DFB20100 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Max. forward voltage: 1.1V
Version: flat
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
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NRVBB20100CTT4G ONSEMI mbrb20100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Max. forward voltage: 0.95V
Max. load current: 20A
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ESD7M5.0DT5G ONSEMI esd7m5.0d-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.4V; double,common anode; SOT723; reel,tape
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: common anode; double
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
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MOC8204SM MOC8204SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C03E8EA33A0D6&compId=MOC8204SM.pdf?ci_sign=07ed3e89b97a61c9db80bfe71004d7d4ae25e774 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 20%@10mA
Mounting: SMD
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
CTR@If: 20%@10mA
Insulation voltage: 4.17kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
6+83.10 грн
10+52.03 грн
Мінімальне замовлення: 6
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NRVBB41H100CTT4G ONSEMI mbr41h100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
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MC33179DTBR2G ONSEMI mc33178-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Number of channels: quad
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SZ1SMB5936BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FAN7385MX ONSEMI fan7385-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SOP14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -650...350mA
Pulse fall time: 70ns
Impulse rise time: 90ns
Voltage class: 600V
Technology: MillerDrive™
Number of channels: 2
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MC74VHCT08ADR2G MC74VHCT08ADR2G ONSEMI mc74vhc08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 40µA
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MC74VHCT08ADTR2G MC74VHCT08ADTR2G ONSEMI mc74vhc08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
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NTMFS5C410NLT1G ONSEMI ntmfs5c410nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVB099N65S3 nvb099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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NTHL019N65S3H nthl019n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 fcmt099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 75A
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FCPF099N65S3 fcpf099n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Pulsed drain current: 75A
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NTZD5110NT1G ntzd5110n-d.pdf
NTZD5110NT1G
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BYW80-200G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d
BYW80-200G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
Reverse recovery time: 35ns
на замовлення 1360 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.40 грн
10+45.34 грн
Мінімальне замовлення: 8
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NCP1336BDR2G ncp1336-d.pdf
NCP1336BDR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO14; 9÷28VDC
Mounting: SMD
Case: SO14
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9...28V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
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NCP1338DR2G ncp1338-d.pdf ONSM-S-A0011139603-1.pdf?t.download=true&u=ovmfp3
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Mounting: SMD
Case: SO7
Type of integrated circuit: PMIC
Operating temperature: 0...125°C
Output current: 0.5A
Number of channels: 1
Operating voltage: 9...18.6V DC
Frequency: 130kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
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MJE15029G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf
MJE15029G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Collector current: 8A
Power dissipation: 50W
Collector-emitter voltage: 120V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+142.39 грн
10+111.37 грн
11+90.69 грн
29+85.91 грн
Мінімальне замовлення: 3
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LMV931SN3T1G lmv931-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; TSOP5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: TSOP5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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LMV931SQ3T2G lmv931-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.5MHz; SC70-5; 1.8÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.5MHz
Mounting: SMT
Case: SC70-5
Slew rate: 480mV/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Voltage supply range: 1.8...5V DC
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Number of channels: single
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NCP163ASN330T1G ncp163-d.pdf
NCP163ASN330T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
на замовлення 1349 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.98 грн
18+22.91 грн
20+20.36 грн
25+17.50 грн
66+14.16 грн
182+13.36 грн
Мінімальне замовлення: 15
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NB3M8302CDR2G nb3m8302c-d.pdf
NB3M8302CDR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 4.6V DC
Technology: CMOS; TTL
Kind of integrated circuit: fanout buffer
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NB3M8302CDG nb3m8302c-d.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital
Type of integrated circuit: digital
на замовлення 490 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
98+160.20 грн
196+133.64 грн
Мінімальне замовлення: 98
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SZMMSZ4680T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
SZMMSZ4680T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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NTLJF3117PT1G ntljf3117p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMT064N65S3H ntmt064n65s3h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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MUN5211T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C2091FB92040CE&compId=MUN2211.PDF?ci_sign=414c3c3e3685fa2f362efb0e2f3ec37af6d380b4
MUN5211T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 544 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.28 грн
65+6.20 грн
105+3.80 грн
500+2.77 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMUN5211T1G dtc114e-d.pdf
SMUN5211T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
38+10.34 грн
Мінімальне замовлення: 38
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MUN5211DW1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1455BDF25C0CE&compId=MUN5211DW1.PDF?ci_sign=3cf432a5e8d799c49791300d0639c0541b0793dd
MUN5211DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.187W
Current gain: 60
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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SMUN5211DW1T1G dtc114ed-d.pdf
SMUN5211DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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SMUN5211T3G dtc114e-d.pdf
SMUN5211T3G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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NSVMUN5211DW1T2G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 35...60
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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MELSMUN5211T3G
Виробник: ONSEMI
Category: Unclassified
Description: MELSMUN5211T3G
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+2.66 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
VEOSMUN5211T1G
Виробник: ONSEMI
Category: Unclassified
Description: VEOSMUN5211T1G
на замовлення 81000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6000+1.17 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
MC74LVX573DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB036680D3&compId=MC74LVX573-D.pdf?ci_sign=387d5e6055f2989f2b0e3d704ad1a8ef93aa8da2
MC74LVX573DTG
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 158 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+95.95 грн
10+53.22 грн
25+37.79 грн
69+35.72 грн
150+34.37 грн
Мінімальне замовлення: 5
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MC74LVX573DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632AB0367C0D3&compId=MC74LVX573-D.pdf?ci_sign=e276c4a6d63eaf6621406c4b95ad6ef8f041d6c1
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; LVX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
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NCP431BISNT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0
NCP431BISNT1G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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NCP432BISNT1G ncp431-d.pdf
NCP432BISNT1G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD07A9B690C2469&compId=MJ11032G.PDF?ci_sign=7f6b0e43d6d7b9d29a2a21851b22e79b9d1bb499
MJ11033G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: PNP
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 120V
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+793.29 грн
2+716.74 грн
4+677.76 грн
10+650.71 грн
В кошику  од. на суму  грн.
1SMB5940BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Case: SMB
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SZ1SMB5940BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Case: SMB
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NCP1397ADR2G ncp1397-d.pdf
NCP1397ADR2G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
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MUN5235T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE88FAAC1C7779EB3D2&compId=mun2235.pdf?ci_sign=acd83ed011384d5d85e267c949aaa1af22e5d958
MUN5235T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.31W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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74AC04MTCX 74ACT04-D.PDF
74AC04MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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74AC04SCX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A72440D3&compId=74ACT04-D.pdf?ci_sign=b17e55d78a46ae3e5863f355d403b04d7efb3c83
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
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1SMA5932BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5932BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2987 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.99 грн
21+19.33 грн
50+14.56 грн
100+12.65 грн
113+8.27 грн
310+7.88 грн
2000+7.56 грн
Мінімальне замовлення: 18
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SZ1SMA5932BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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LP2951CD-3.0R2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV2951ACD3.3R2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV2951ACDR2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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SZBZX84B6V8LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Leakage current: 2µA
Application: automotive industry
Kind of package: reel; tape
Manufacturer series: BZX84B
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
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FDPC8011S fdpc8011s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDPC8012S fdpc8012s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDPC8013S fdpc8013s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDPC8016S fdpc8016s-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Kind of channel: enhancement
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FDD13AN06A0-F085 fdd13an06_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC008N08C fdmc008n08c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FPDB40PH60B fpdb40ph60b-d.pdf
Виробник: ONSEMI
Category: Unclassified
Description: FPDB40PH60B
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+1325.29 грн
30+1107.33 грн
Мінімальне замовлення: 10
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DFB20100 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Electrical mounting: THT
Max. forward voltage: 1.1V
Version: flat
Type of bridge rectifier: single-phase
Max. forward impulse current: 250A
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NRVBB20100CTT4G mbrb20100ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Max. forward voltage: 0.95V
Max. load current: 20A
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ESD7M5.0DT5G esd7m5.0d-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.4V; double,common anode; SOT723; reel,tape
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: common anode; double
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
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MOC8204SM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C03E8EA33A0D6&compId=MOC8204SM.pdf?ci_sign=07ed3e89b97a61c9db80bfe71004d7d4ae25e774
MOC8204SM
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 20%@10mA
Mounting: SMD
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
CTR@If: 20%@10mA
Insulation voltage: 4.17kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.10 грн
10+52.03 грн
Мінімальне замовлення: 6
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NRVBB41H100CTT4G mbr41h100ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
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MC33179DTBR2G mc33178-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Number of channels: quad
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SZ1SMB5936BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 30V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FAN7385MX fan7385-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SOP14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -650...350mA
Pulse fall time: 70ns
Impulse rise time: 90ns
Voltage class: 600V
Technology: MillerDrive™
Number of channels: 2
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MC74VHCT08ADR2G mc74vhc08-d.pdf
MC74VHCT08ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 40µA
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MC74VHCT08ADTR2G mc74vhc08-d.pdf
MC74VHCT08ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
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NTMFS5C410NLT1G ntmfs5c410nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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