Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13538) > Сторінка 147 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TB62208FG,C,8,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TK110A65Z,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 24A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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| TLP732(GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732F(D4-BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4GRH-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-GB-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4GRH-LF5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-GB-LF4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GB-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(BL-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-NEMIC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GB-LF4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GB-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GRH-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GR-LF4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GR-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(GR-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-GRL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4GRL-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732F(D4-BL-T4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4GRH-TP5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4COS-LF2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-GR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP732(D4-GB-LF1,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TW070J120B,S1Q | Toshiba Semiconductor and Storage |
Description: SICFET N-CH 1200V 36A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V FET Feature: Standard Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5.8V @ 20mA Supplier Device Package: TO-3P(N) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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74VHC163FT | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 4-BIT 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: -40°C ~ 125°C (TA) Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-TSSOPB Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC163FT | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 4-BIT 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: -40°C ~ 125°C (TA) Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-TSSOPB Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC78H670FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IN 20V, 2.0Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Serial Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.5V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 16V Supplier Device Package: 16-VQFN (3x3) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC78H670FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IN 20V, 2.0Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Serial Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.5V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 2.5V ~ 16V Supplier Device Package: 16-VQFN (3x3) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 Part Status: Active |
на замовлення 454 шт: термін постачання 21-31 дні (днів) |
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XPH3R206NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 70A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XPH3R206NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 70A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8977 шт: термін постачання 21-31 дні (днів) |
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TK170V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 18A 5DFNPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TK125V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 24A 5DFNPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TK125V65Z,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 24A 5DFNPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.02mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V |
на замовлення 9890 шт: термін постачання 21-31 дні (днів) |
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TJ30S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 30A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TJ30S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 30A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3504 шт: термін постачання 21-31 дні (днів) |
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TCR3UG18A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LIN 1.8V 300MA 4-WCSP-FPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.457V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR3UG18A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LIN 1.8V 300MA 4-WCSP-FPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.457V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
на замовлення 3297 шт: термін постачання 21-31 дні (днів) |
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TCR3UG33A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA 4WCSP-FPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.273V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3UG33A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA 4WCSP-FPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP-F (0.65x0.65) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.273V @ 300mA Protection Features: Inrush Current, Over Current, Thermal Shutdown |
на замовлення 17107 шт: термін постачання 21-31 дні (днів) |
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TLP240A(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 500MA 0-60VPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 500 mA Approval Agency: CQC, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2 Ohms |
на замовлення 498 шт: термін постачання 21-31 дні (днів) |
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TLP240A(LF1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 500MA 0-60VPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 500 mA Approval Agency: CQC, cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB6615PG,8 | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR DRIVER IC PB-FREEPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 400mA Operating Temperature: -30°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 0V ~ 26V Supplier Device Package: 16-DIP Motor Type - Stepper: Unipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TBD62381AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1Ohm Voltage - Load: 0V ~ 50V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TBD62381AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPPackaging: Cut Tape (CT) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C Output Configuration: Low Side Rds On (Typ): 1Ohm Voltage - Load: 0V ~ 50V Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP |
на замовлення 1395 шт: термін постачання 21-31 дні (днів) |
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TCR3UM175A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.75V 300MA 4DFN |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TCR3UM175A,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.75V 300MA 4DFN |
на замовлення 19860 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TCR5BM11,L3F | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.1V 500MA 5DFNB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR5BM11,L3F | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.1V 500MA 5DFNB |
на замовлення 9825 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SSM5H16TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 1.9A UFVPackaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFV Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM5H16TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 1.9A UFVPackaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFV Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V |
на замовлення 6473 шт: термін постачання 21-31 дні (днів) |
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TJ8S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TJ8S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TJ10S04M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3780 шт: термін постачання 21-31 дні (днів) |
|
| TB62208FG,C,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TK110A65Z,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: MOSFET N-CH 650V 24A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 433.59 грн |
| TLP732(GR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732F(D4-BL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4GRH-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-GB-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4GRH-LF5,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-GB-LF4,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GB-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(BL-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-NEMIC,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GB-LF4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GB,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GB-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GRH-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GR-LF4,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GR-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(GR-LF1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-GRL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4GRL-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732F(D4-BL-T4,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4GRH-TP5,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-GB,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4COS-LF2,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-GR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-LF2,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TLP732(D4-GB-LF1,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| TW070J120B,S1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SICFET N-CH 1200V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
FET Feature: Standard
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5.8V @ 20mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
Description: SICFET N-CH 1200V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
FET Feature: Standard
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5.8V @ 20mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2232.42 грн |
| 10+ | 1909.92 грн |
| 100+ | 1670.48 грн |
| 74VHC163FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC163FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C (TA)
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-TSSOPB
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
товару немає в наявності
В кошику
од. на суму грн.
| TC78H670FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TC78H670FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
на замовлення 454 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.80 грн |
| 10+ | 61.58 грн |
| 25+ | 55.79 грн |
| 100+ | 46.35 грн |
| 250+ | 43.49 грн |
| XPH3R206NC,L1XHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 47.07 грн |
| XPH3R206NC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8977 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.43 грн |
| 10+ | 92.93 грн |
| 100+ | 64.69 грн |
| 500+ | 52.71 грн |
| 1000+ | 52.07 грн |
| TK170V65Z,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 105.58 грн |
| TK125V65Z,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 180.40 грн |
| TK125V65Z,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
на замовлення 9890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 444.46 грн |
| 10+ | 288.83 грн |
| 100+ | 212.63 грн |
| TJ30S06M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 31.72 грн |
| TJ30S06M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.78 грн |
| 10+ | 70.64 грн |
| 100+ | 47.39 грн |
| 500+ | 35.10 грн |
| 1000+ | 32.09 грн |
| TCR3UG18A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
товару немає в наявності
В кошику
од. на суму грн.
| TCR3UG18A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.457V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
на замовлення 3297 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.65 грн |
| 24+ | 12.57 грн |
| 27+ | 11.10 грн |
| 100+ | 8.95 грн |
| 250+ | 8.24 грн |
| 500+ | 7.82 грн |
| 1000+ | 7.35 грн |
| 2500+ | 6.98 грн |
| TCR3UG33A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.14 грн |
| 10000+ | 8.03 грн |
| TCR3UG33A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
на замовлення 17107 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.62 грн |
| 12+ | 27.09 грн |
| 25+ | 22.33 грн |
| 100+ | 15.88 грн |
| 250+ | 13.37 грн |
| 500+ | 11.82 грн |
| 1000+ | 10.35 грн |
| 2500+ | 8.97 грн |
| TLP240A(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 500 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 500 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
на замовлення 498 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.10 грн |
| 10+ | 91.21 грн |
| 100+ | 69.46 грн |
| TLP240A(LF1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 500 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 500 mA
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
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од. на суму грн.
| TB6615PG,8 |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR DRIVER IC PB-FREE
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 26V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: STEPPING MOTOR DRIVER IC PB-FREE
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 26V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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од. на суму грн.
| TBD62381AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 76.37 грн |
| TBD62381AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 1395 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.00 грн |
| 10+ | 144.41 грн |
| 100+ | 100.56 грн |
| 500+ | 81.47 грн |
| TCR3UM175A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.75V 300MA 4DFN
Description: IC REG LINEAR 1.75V 300MA 4DFN
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCR3UM175A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.75V 300MA 4DFN
Description: IC REG LINEAR 1.75V 300MA 4DFN
на замовлення 19860 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCR5BM11,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Description: IC REG LINEAR 1.1V 500MA 5DFNB
товару немає в наявності
В кошику
од. на суму грн.
| TCR5BM11,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Description: IC REG LINEAR 1.1V 500MA 5DFNB
на замовлення 9825 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM5H16TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Description: MOSFET N-CH 30V 1.9A UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.45 грн |
| SSM5H16TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Description: MOSFET N-CH 30V 1.9A UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
на замовлення 6473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.51 грн |
| 12+ | 25.89 грн |
| 100+ | 16.51 грн |
| 500+ | 11.71 грн |
| 1000+ | 10.48 грн |
| TJ8S06M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: MOSFET P-CH 60V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| TJ8S06M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: MOSFET P-CH 60V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| TJ10S04M3L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 26.30 грн |



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