Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 162 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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74VHCV574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPBPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 16mA, 16mA Trigger Type: Positive Edge Clock Frequency: 135 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHCV574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPBPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 16mA, 16mA Trigger Type: Positive Edge Clock Frequency: 135 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 4948 шт: термін постачання 21-31 дні (днів) |
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TB9051FTG,EL | Toshiba Semiconductor and Storage |
Description: MOTOR CONTROLLER SINGLE CHANNELMotor Type - AC, DC: Brushed DC Supplier Device Package: 28-QFN (6x6) Technology: Bi-CMOS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 125°C (TA) Interface: PWM Current - Output: 6A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 28-PowerQFN Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 1841 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1841 шт В кошику од. на суму грн. | ||||||||||||||||||
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TB9051FTG,EL | Toshiba Semiconductor and Storage |
Description: MOTOR CONTROLLER SINGLE CHANNELQualification: AEC-Q100 Grade: Automotive Motor Type - AC, DC: Brushed DC Supplier Device Package: 28-QFN (6x6) Technology: Bi-CMOS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 125°C (TA) Interface: PWM Current - Output: 6A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 28-PowerQFN Packaging: Cut Tape (CT) |
на замовлення 1841 шт: термін постачання 21-31 дні (днів) |
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1SS372(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USMPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USM Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1SS372(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USM Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 625 шт: термін постачання 21-31 дні (днів) |
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TCR3RM10A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 1.0V 300MA 4DFNCSupplier Device Package: 4-DFNC (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 12 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 1V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM10A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 1.0V 300MA 4DFNCProtection Features: Over Current, Over Temperature Part Status: Active Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 1V Supplier Device Package: 4-DFNC (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 12 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 9950 шт: термін постачання 21-31 дні (днів) |
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SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 1.5A UF6Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 1.5A UF6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
на замовлення 5483 шт: термін постачання 21-31 дні (днів) |
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RN1302,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Qualification: AEC-Q101 Grade: Automotive Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RN1302,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 2682 шт: термін постачання 21-31 дні (днів) |
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RN1303,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1303,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5890 шт: термін постачання 21-31 дні (днів) |
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TLP781(GRH-TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP781(GRL-TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TLP781(GRH,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERTurn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TCK126BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK126BG,LF | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOUPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 4-XFBGA, CSPBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 343mOhm Input Type: Non-Inverting Voltage - Load: 1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSPG (0.65x0.65) Part Status: Active |
на замовлення 9514 шт: термін постачання 21-31 дні (днів) |
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TBD62308AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16HSOPPackaging: Tape & Reel (TR) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 370mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 16-HSOP |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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TBD62308AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16HSOPPackaging: Cut Tape (CT) Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 370mOhm Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 16-HSOP |
на замовлення 4955 шт: термін постачання 21-31 дні (днів) |
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TCR3UM30A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.273V @ 300mA Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR3UM30A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTVoltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.273V @ 300mA Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 |
на замовлення 19995 шт: термін постачання 21-31 дні (днів) |
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TCR3UM33A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.273V @ 300mA Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TCR3UM33A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTProtection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.273V @ 300mA Control Features: Current Limit, Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 680 nA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1738 шт: термін постачання 21-31 дні (днів) |
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7UL1G00FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP USVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: USV Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G00FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP USVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: USV Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 5511 шт: термін постачання 21-31 дні (днів) |
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7UL1G17FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVSupplier Device Package: USV Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Input Type: Schmitt Trigger Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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7UL1G17FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTING 3.6V USVSupplier Device Package: USV Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Input Type: Schmitt Trigger Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 10646 шт: термін постачання 21-31 дні (днів) |
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SSM10N954L,EFF | Toshiba Semiconductor and Storage |
Description: COMMON-DRAIN NCH MOSFET, 12V, 13Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TCSPAC-153001 Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM10N954L,EFF | Toshiba Semiconductor and Storage |
Description: COMMON-DRAIN NCH MOSFET, 12V, 13Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TCSPAC-153001 Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V |
на замовлення 9825 шт: термін постачання 21-31 дні (днів) |
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2SC3668-O,T2CLAF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A MSTMPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: MSTM Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: SC-71 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3665-Y,T2YNSF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 800MA 120V SC71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3668-Y,F2PANF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A MSTMPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: MSTM Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: SC-71 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3668-Y,T2F(M | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A MSTMPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: MSTM Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: SC-71 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3668-Y,T2F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A MSTMPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: MSTM Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: SC-71 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3665-Y(T2NSW,FM | Toshiba Semiconductor and Storage |
Description: TRANS NPN 800MA 120V SC71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3665-Y,T2F(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 800MA 120V SC71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3668-Y,T2WNLF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A MSTMPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: MSTM Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: SC-71 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3665-Y,T2NSF(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 800MA 120V SC71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC4738-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC4738-GR,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 120 mW Qualification: AEC-Q101 |
на замовлення 3952 шт: термін постачання 21-31 дні (днів) |
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| TLP3407SRA4(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 600MA 0-60V Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) On-State Resistance (Max): 300 Ohms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: S-VSON16T (2x6.25) Load Current: 600 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.4VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 16-LDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||||||
| TLP3407SRA4(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 600MA 0-60V Operating Temperature: -40°C ~ 110°C Relay Type: Photo-Coupled Relay (Photorelay) On-State Resistance (Max): 300 Ohms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: S-VSON16T (2x6.25) Load Current: 600 mA Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.4VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 16-LDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TLP3823F(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-100V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
| CUS10I40A(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A US-FLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RN1908FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRQualification: AEC-Q101 Grade: Automotive Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1908FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRSupplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Qualification: AEC-Q101 Grade: Automotive Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1908,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1908,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TCR5RG33A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 3.3VPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR5RG33A,LF | Toshiba Semiconductor and Storage |
Description: LDO REG, IOUT: 500MA VOUT: 3.3VPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
на замовлення 16468 шт: термін постачання 21-31 дні (днів) |
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TC7SB66CFU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST-NC X 1 7OHM USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 7Ohm Supplier Device Package: USV Voltage - Supply, Single (V+): 1.65V ~ 5.5V Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TC7SB66CFU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST-NC X 1 7OHM USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 7Ohm Supplier Device Package: USV Voltage - Supply, Single (V+): 1.65V ~ 5.5V Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1µA Part Status: Active Number of Circuits: 1 |
на замовлення 13719 шт: термін постачання 21-31 дні (днів) |
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SSM3J378R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +6V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3J378R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +6V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
на замовлення 13676 шт: термін постачання 21-31 дні (днів) |
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SSM3J35CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CHANNEL 20V 100MA CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SSM3J35CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CHANNEL 20V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V |
на замовлення 2784 шт: термін постачання 21-31 дні (днів) |
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TK065U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=270W F=1MHZPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.69mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TK065U65Z,RQ | Toshiba Semiconductor and Storage |
Description: DTMOS VI TOLL PD=270W F=1MHZPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.69mA Supplier Device Package: TOLL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V |
на замовлення 1575 шт: термін постачання 21-31 дні (днів) |
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| 74VHCV574FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 12.36 грн |
| 74VHCV574FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 32.46 грн |
| 25+ | 26.80 грн |
| 100+ | 19.12 грн |
| 250+ | 16.17 грн |
| 500+ | 14.34 грн |
| 1000+ | 12.61 грн |
| TB9051FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: MOTOR CONTROLLER SINGLE CHANNEL
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 28-QFN (6x6)
Technology: Bi-CMOS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 6A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 28-PowerQFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: MOTOR CONTROLLER SINGLE CHANNEL
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 28-QFN (6x6)
Technology: Bi-CMOS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 6A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 28-PowerQFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)
| TB9051FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: MOTOR CONTROLLER SINGLE CHANNEL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 28-QFN (6x6)
Technology: Bi-CMOS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 6A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 28-PowerQFN
Packaging: Cut Tape (CT)
Description: MOTOR CONTROLLER SINGLE CHANNEL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 28-QFN (6x6)
Technology: Bi-CMOS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Current - Output: 6A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 28-PowerQFN
Packaging: Cut Tape (CT)
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 702.07 грн |
| 10+ | 457.20 грн |
| 25+ | 400.18 грн |
| 100+ | 315.12 грн |
| 250+ | 285.45 грн |
| 500+ | 284.91 грн |
| 1SS372(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1SS372(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 22+ | 14.03 грн |
| 100+ | 8.77 грн |
| 500+ | 6.08 грн |
| TCR3RM10A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 1.0V 300MA 4DFNC
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 12 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1V
Description: LDO REG 1.0V 300MA 4DFNC
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 12 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3RM10A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 1.0V 300MA 4DFNC
Protection Features: Over Current, Over Temperature
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 12 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: LDO REG 1.0V 300MA 4DFNC
Protection Features: Over Current, Over Temperature
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 4-DFNC (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 12 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 9950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 12+ | 27.09 грн |
| 25+ | 22.27 грн |
| 100+ | 15.81 грн |
| 250+ | 13.30 грн |
| 500+ | 11.76 грн |
| 1000+ | 10.30 грн |
| 2500+ | 8.93 грн |
| 5000+ | 8.09 грн |
| SSM6P39TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6P39TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
на замовлення 5483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 12+ | 26.04 грн |
| 100+ | 16.63 грн |
| 500+ | 11.79 грн |
| 1000+ | 10.56 грн |
| RN1302,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1302,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 2682 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 23+ | 13.43 грн |
| 100+ | 8.42 грн |
| 500+ | 5.85 грн |
| 1000+ | 5.19 грн |
| RN1303,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.48 грн |
| RN1303,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.47 грн |
| 23+ | 13.43 грн |
| 100+ | 8.42 грн |
| 500+ | 5.85 грн |
| 1000+ | 5.19 грн |
| TLP781(GRH-TP6,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| TLP781(GRL-TP6,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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од. на суму грн.
| TLP781(GRH,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Description: PHOTOCOUPLER
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
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| TCK126BG,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 7.54 грн |
| TCK126BG,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
на замовлення 9514 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 25+ | 12.39 грн |
| 28+ | 10.98 грн |
| 100+ | 8.86 грн |
| 250+ | 8.17 грн |
| 500+ | 7.75 грн |
| 1000+ | 7.28 грн |
| 2500+ | 6.92 грн |
| TBD62308AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Description: IC PWR SWITCH N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 43.94 грн |
| TBD62308AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Description: IC PWR SWITCH N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 370mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
на замовлення 4955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 155.76 грн |
| 10+ | 96.11 грн |
| 100+ | 65.32 грн |
| 500+ | 48.92 грн |
| TCR3UM30A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.52 грн |
| TCR3UM30A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
на замовлення 19995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 14+ | 22.09 грн |
| 25+ | 18.12 грн |
| 100+ | 12.80 грн |
| 250+ | 10.72 грн |
| 500+ | 9.44 грн |
| 1000+ | 8.23 грн |
| 2500+ | 7.09 грн |
| 5000+ | 6.38 грн |
| TCR3UM33A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3UM33A,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 14+ | 22.09 грн |
| 25+ | 18.12 грн |
| 100+ | 12.80 грн |
| 250+ | 10.72 грн |
| 500+ | 9.44 грн |
| 1000+ | 8.23 грн |
| 7UL1G00FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G00FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 5511 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.52 грн |
| 55+ | 5.45 грн |
| 63+ | 4.75 грн |
| 100+ | 3.75 грн |
| 250+ | 3.42 грн |
| 500+ | 3.22 грн |
| 1000+ | 3.01 грн |
| 7UL1G17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.06 грн |
| 6000+ | 2.84 грн |
| 9000+ | 2.79 грн |
| 7UL1G17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 10646 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.52 грн |
| 55+ | 5.45 грн |
| 63+ | 4.75 грн |
| 100+ | 3.75 грн |
| 250+ | 3.42 грн |
| 500+ | 3.22 грн |
| 1000+ | 3.01 грн |
| SSM10N954L,EFF |
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Виробник: Toshiba Semiconductor and Storage
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SSM10N954L,EFF |
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Виробник: Toshiba Semiconductor and Storage
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
на замовлення 9825 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.09 грн |
| 10+ | 46.71 грн |
| 100+ | 39.15 грн |
| 2SC3668-O,T2CLAF(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3665-Y,T2YNSF(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3668-Y,F2PANF(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3668-Y,T2F(M |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3668-Y,T2F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3665-Y(T2NSW,FM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3665-Y,T2F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3668-Y,T2WNLF(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3665-Y,T2NSF(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4738-GR,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.04 грн |
| 2SC4738-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3952 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.15 грн |
| 26+ | 11.79 грн |
| 100+ | 7.35 грн |
| 500+ | 5.09 грн |
| 1000+ | 4.51 грн |
| TLP3407SRA4(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| TLP3407SRA4(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLP3823F(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Description: SSR RELAY SPST-NO 3A 0-100V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| CUS10I40A(TE85L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A US-FLAT
Description: DIODE SCHOTTKY 40V 1A US-FLAT
товару немає в наявності
В кошику
од. на суму грн.
| RN1908FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.15 грн |
| 8000+ | 4.55 грн |
| RN1908FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| RN1908,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.78 грн |
| 6000+ | 5.99 грн |
| RN1908,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| TCR5RG33A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 10.28 грн |
| 10000+ | 9.18 грн |
| TCR5RG33A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 16468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.14 грн |
| 11+ | 29.18 грн |
| 25+ | 24.06 грн |
| 100+ | 17.14 грн |
| 250+ | 14.45 грн |
| 500+ | 12.80 грн |
| 1000+ | 11.22 грн |
| 2500+ | 9.75 грн |
| TC7SB66CFU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.16 грн |
| 6000+ | 6.69 грн |
| 9000+ | 6.59 грн |
| TC7SB66CFU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 13719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 25+ | 11.94 грн |
| 29+ | 10.57 грн |
| 100+ | 8.49 грн |
| 250+ | 7.83 грн |
| 500+ | 7.42 грн |
| 1000+ | 6.97 грн |
| SSM3J378R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.70 грн |
| 6000+ | 5.37 грн |
| 9000+ | 4.76 грн |
| SSM3J378R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
на замовлення 13676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 17+ | 17.69 грн |
| 100+ | 8.90 грн |
| 500+ | 7.40 грн |
| 1000+ | 5.76 грн |
| SSM3J35CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SSM3J35CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.37 грн |
| 27+ | 11.42 грн |
| 100+ | 7.07 грн |
| 500+ | 4.88 грн |
| 1000+ | 4.31 грн |
| 2000+ | 3.83 грн |
| TK065U65Z,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TK065U65Z,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 516.86 грн |
| 10+ | 336.39 грн |
| 100+ | 245.01 грн |
| 500+ | 220.41 грн |




















