Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13496) > Сторінка 162 з 225
| Фото | Назва | Виробник | Інформація |
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SSM3J168F,LXHF | Toshiba Semiconductor and Storage |
 Description: SMOS LOW RON VDS:-60V VGSS:+10/-Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: S-Mini Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSM3J168F,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON VDS:-60V VGSS:+10/- Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: S-Mini Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 9308 шт: термін постачання 21-31 дні (днів) |
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| SSM3J356R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -2A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| SSM3J356R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -2A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 7878 шт: термін постачання 21-31 дні (днів) |
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| SSM3J351R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -3.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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| SSM3J351R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -3.5A SOT23 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 27269 шт: термін постачання 21-31 дні (днів) |
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TC78H651FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (4) Applications: General Purpose Technology: DMOS Voltage - Load: 1.8V ~ 6V Supplier Device Package: 16-TSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC78H651FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (4) Applications: General Purpose Technology: DMOS Voltage - Load: 1.8V ~ 6V Supplier Device Package: 16-TSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 5994 шт: термін постачання 21-31 дні (днів) |
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TB62269FTAG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 32VQFN |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB62269FTAG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 32VQFN |
на замовлення 4040 шт: термін постачання 21-31 дні (днів) |
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GT20N135SRA,S1E | Toshiba Semiconductor and Storage |
Description: IGBT 1350V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Switching Energy: -, 700µJ (off) Test Condition: 300V, 40A, 39Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 80 A Power - Max: 312 W |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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SSM3K56FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 4089000 шт: термін постачання 21-31 дні (днів) |
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SSM3K56FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 4090975 шт: термін постачання 21-31 дні (днів) |
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SSM6K810R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6K810R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4930 шт: термін постачання 21-31 дні (днів) |
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SSM6J808R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6J808R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6932 шт: термін постачання 21-31 дні (днів) |
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TCR2EN33,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.3V IOUT=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2EN33,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.3V IOUT=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
на замовлення 981 шт: термін постачання 21-31 дні (днів) |
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TCR2LN33,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA 4-SDFN Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN33,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA 4-SDFN Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 2634 шт: термін постачання 21-31 дні (днів) |
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TCR3RM33A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 33V 300MA 4DFNC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM33A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 33V 300MA 4DFNC |
на замовлення 6356 шт: термін постачання 21-31 дні (днів) |
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TCR3UF33A,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.287V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TCR3UF33A,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.287V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 15754 шт: термін постачання 21-31 дні (днів) |
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SSM6G18NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2A 6UDFN |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM6G18NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2A 6UDFN |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM5H08TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.5A UFV Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UFV Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM5H08TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.5A UFV Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UFV Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
| TCD1205DG(8Z,W) | Toshiba Semiconductor and Storage |
Description: CCD IMAGE SENSOR INTEGRATED CIRC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF2B5M5CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.3VWM 15VC CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 37W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DF2B5M5CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.3VWM 15VC CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 37W Power Line Protection: No |
на замовлення 6209 шт: термін постачання 21-31 дні (днів) |
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7UL1T04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP USV Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.1V ~ 0.4V Input Logic Level - Low: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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7UL1T04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP USV Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.1V ~ 0.4V Input Logic Level - Low: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 10338 шт: термін постачання 21-31 дні (днів) |
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7UL1G14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1-INP USV Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1-INP USV Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 12192 шт: термін постачання 21-31 дні (днів) |
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DF2S6M5CT,L3F | Toshiba Semiconductor and Storage |
Description: UNIDIRECTIONAL ESD DIODE VRWM:5. Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 37W Power Line Protection: No |
товару немає в наявності |
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DF2S6M5CT,L3F | Toshiba Semiconductor and Storage |
Description: UNIDIRECTIONAL ESD DIODE VRWM:5. Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 37W Power Line Protection: No |
на замовлення 9555 шт: термін постачання 21-31 дні (днів) |
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TLP3475SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Tape & Reel (TR) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 250 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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TLP3475SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Cut Tape (CT) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 250 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 710 шт: термін постачання 21-31 дні (днів) |
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TLP3412SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Tape & Reel (TR) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 250 mA Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP3412SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Cut Tape (CT) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 250 mA Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 1601 шт: термін постачання 21-31 дні (днів) |
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GT30N135SRA,S1E | Toshiba Semiconductor and Storage |
Description: IGBT 1350V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A Supplier Device Package: TO-247 Switching Energy: -, 1.3mJ (off) Test Condition: 300V, 60A, 39Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 348 W |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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74VHC9273FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 100 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 8 |
товару немає в наявності |
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74VHC9273FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 100 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 2049 шт: термін постачання 21-31 дні (днів) |
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74VHCV574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 16mA, 16mA Trigger Type: Positive Edge Clock Frequency: 135 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHCV574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 16mA, 16mA Trigger Type: Positive Edge Clock Frequency: 135 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Bits per Element: 8 |
на замовлення 4948 шт: термін постачання 21-31 дні (днів) |
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TB9051FTG,EL | Toshiba Semiconductor and Storage |
Description: MOTOR CONTROLLER SINGLE CHANNEL Packaging: Tape & Reel (TR) Package / Case: 28-PowerQFN Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 5.5V Technology: Bi-CMOS Supplier Device Package: 28-QFN (6x6) Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1841 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TB9051FTG,EL | Toshiba Semiconductor and Storage |
Description: MOTOR CONTROLLER SINGLE CHANNEL Packaging: Cut Tape (CT) Package / Case: 28-PowerQFN Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 5.5V Technology: Bi-CMOS Supplier Device Package: 28-QFN (6x6) Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1841 шт: термін постачання 21-31 дні (днів) |
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1SS372(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USM Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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1SS372(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USM Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 10017 шт: термін постачання 21-31 дні (днів) |
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TCR3RM10A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 1.0V 300MA 4DFNC Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 1V Control Features: Current Limit, Enable Part Status: Active Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR3RM10A,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG 1.0V 300MA 4DFNC Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 12 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFNC (1x1) Voltage - Output (Min/Fixed): 1V Control Features: Current Limit, Enable Part Status: Active Protection Features: Over Current, Over Temperature |
на замовлення 9950 шт: термін постачання 21-31 дні (днів) |
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SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 1.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM6P39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 1.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
на замовлення 8608 шт: термін постачання 21-31 дні (днів) |
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RN1302,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1302,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 2682 шт: термін постачання 21-31 дні (днів) |
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RN1303,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1303,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 5890 шт: термін постачання 21-31 дні (днів) |
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TLP781(GRH-TP6,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| SSM3J168F,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.91 грн |
| SSM3J168F,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
на замовлення 9308 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 13+ | 27.25 грн |
| 100+ | 16.40 грн |
| 500+ | 10.44 грн |
| 1000+ | 8.75 грн |
| SSM3J356R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.94 грн |
| 6000+ | 8.73 грн |
| SSM3J356R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
на замовлення 7878 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.46 грн |
| 13+ | 26.76 грн |
| 100+ | 17.11 грн |
| 500+ | 12.14 грн |
| 1000+ | 10.87 грн |
| SSM3J351R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.72 грн |
| 6000+ | 13.93 грн |
| 9000+ | 13.31 грн |
| 15000+ | 11.84 грн |
| 21000+ | 11.73 грн |
| SSM3J351R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
на замовлення 27269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.90 грн |
| 10+ | 40.22 грн |
| 100+ | 26.10 грн |
| 500+ | 18.81 грн |
| 1000+ | 16.98 грн |
| TC78H651FNG(O,EL) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 49.75 грн |
| TC78H651FNG(O,EL) |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.50 грн |
| 10+ | 101.01 грн |
| 25+ | 95.84 грн |
| 100+ | 73.87 грн |
| 250+ | 69.05 грн |
| 500+ | 61.02 грн |
| 1000+ | 47.38 грн |
| TB62269FTAG,EL |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 32VQFN
Description: IC MOTOR DRIVER 32VQFN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 107.00 грн |
| TB62269FTAG,EL |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 32VQFN
Description: IC MOTOR DRIVER 32VQFN
на замовлення 4040 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.99 грн |
| 10+ | 192.93 грн |
| 25+ | 182.02 грн |
| 100+ | 145.55 грн |
| 250+ | 136.66 грн |
| 500+ | 119.58 грн |
| 1000+ | 97.46 грн |
| GT20N135SRA,S1E |
|
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
Description: IGBT 1350V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 274.45 грн |
| 10+ | 198.96 грн |
| 30+ | 180.04 грн |
| SSM3K56FS,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 4089000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.18 грн |
| 6000+ | 3.63 грн |
| 9000+ | 3.42 грн |
| 15000+ | 3.00 грн |
| 21000+ | 2.87 грн |
| 30000+ | 2.75 грн |
| 75000+ | 2.65 грн |
| SSM3K56FS,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 4090975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.16 грн |
| 24+ | 13.87 грн |
| 100+ | 8.69 грн |
| 500+ | 6.03 грн |
| 1000+ | 5.34 грн |
| SSM6K810R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.40 грн |
| SSM6K810R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.76 грн |
| 10+ | 51.78 грн |
| 100+ | 33.92 грн |
| 500+ | 24.62 грн |
| 1000+ | 22.29 грн |
| SSM6J808R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.21 грн |
| SSM6J808R,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6932 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.48 грн |
| 10+ | 53.19 грн |
| 100+ | 34.97 грн |
| 500+ | 25.46 грн |
| 1000+ | 23.09 грн |
| TCR2EN33,LF(SE |
|
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2EN33,LF(SE |
|
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
на замовлення 981 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.59 грн |
| 14+ | 23.87 грн |
| 25+ | 21.51 грн |
| 100+ | 13.95 грн |
| 250+ | 11.75 грн |
| 500+ | 9.55 грн |
| TCR2LN33,LF(SE |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN33,LF(SE |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 2634 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.74 грн |
| 16+ | 21.47 грн |
| 25+ | 17.57 грн |
| 100+ | 12.35 грн |
| 250+ | 10.31 грн |
| 500+ | 9.06 грн |
| 1000+ | 7.88 грн |
| 2500+ | 6.76 грн |
| TCR3RM33A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 33V 300MA 4DFNC
Description: LDO REG 33V 300MA 4DFNC
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM33A,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 33V 300MA 4DFNC
Description: LDO REG 33V 300MA 4DFNC
на замовлення 6356 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 42.02 грн |
| 10+ | 33.04 грн |
| 25+ | 30.19 грн |
| 100+ | 21.10 грн |
| 250+ | 19.12 грн |
| 500+ | 15.82 грн |
| 1000+ | 11.67 грн |
| 2500+ | 10.70 грн |
| 5000+ | 10.05 грн |
| TCR3UF33A,LM(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.37 грн |
| 6000+ | 6.88 грн |
| 9000+ | 6.77 грн |
| 15000+ | 6.24 грн |
| TCR3UF33A,LM(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 15754 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.01 грн |
| 28+ | 11.98 грн |
| 32+ | 10.60 грн |
| 100+ | 8.51 грн |
| 250+ | 7.83 грн |
| 500+ | 7.42 грн |
| 1000+ | 6.96 грн |
| SSM6G18NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A 6UDFN
Description: MOSFET P-CH 20V 2A 6UDFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM6G18NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A 6UDFN
Description: MOSFET P-CH 20V 2A 6UDFN
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM5H08TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Description: MOSFET N-CH 20V 1.5A UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SSM5H08TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Description: MOSFET N-CH 20V 1.5A UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCD1205DG(8Z,W) |
|
Виробник: Toshiba Semiconductor and Storage
Description: CCD IMAGE SENSOR INTEGRATED CIRC
Description: CCD IMAGE SENSOR INTEGRATED CIRC
товару немає в наявності
В кошику
од. на суму грн.
| DF2B5M5CT,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2B5M5CT,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 6209 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.73 грн |
| 26+ | 12.72 грн |
| 100+ | 5.57 грн |
| 500+ | 4.97 грн |
| 1000+ | 4.51 грн |
| 2000+ | 4.48 грн |
| 5000+ | 4.38 грн |
| 7UL1T04FU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.01 грн |
| 6000+ | 3.73 грн |
| 7UL1T04FU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 10338 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 11.15 грн |
| 48+ | 7.02 грн |
| 54+ | 6.18 грн |
| 100+ | 4.89 грн |
| 250+ | 4.47 грн |
| 500+ | 4.21 грн |
| 1000+ | 3.93 грн |
| 7UL1G14FU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.39 грн |
| 7UL1G14FU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 12192 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.43 грн |
| 55+ | 6.03 грн |
| 63+ | 5.25 грн |
| 100+ | 4.15 грн |
| 250+ | 3.79 грн |
| 500+ | 3.56 грн |
| 1000+ | 3.33 грн |
| DF2S6M5CT,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2S6M5CT,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
на замовлення 9555 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.87 грн |
| 28+ | 11.98 грн |
| 100+ | 8.08 грн |
| 500+ | 5.82 грн |
| 1000+ | 5.23 грн |
| 2000+ | 4.72 грн |
| 5000+ | 4.09 грн |
| TLP3475SRHA4(TPE |
|
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 912.50 грн |
| TLP3475SRHA4(TPE |
|
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1471.72 грн |
| 10+ | 1123.20 грн |
| 100+ | 982.23 грн |
| TLP3412SRHA4(TPE |
|
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 925.68 грн |
| TLP3412SRHA4(TPE |
|
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1544.62 грн |
| 10+ | 1137.41 грн |
| 100+ | 956.92 грн |
| GT30N135SRA,S1E |
|
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1350V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Supplier Device Package: TO-247
Switching Energy: -, 1.3mJ (off)
Test Condition: 300V, 60A, 39Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 348 W
Description: IGBT 1350V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Supplier Device Package: TO-247
Switching Energy: -, 1.3mJ (off)
Test Condition: 300V, 60A, 39Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 348 W
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 337.91 грн |
| 10+ | 246.44 грн |
| 30+ | 223.35 грн |
| 74VHC9273FT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC9273FT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 2049 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.74 грн |
| 10+ | 33.94 грн |
| 25+ | 31.09 грн |
| 100+ | 21.72 грн |
| 250+ | 19.68 грн |
| 500+ | 16.29 грн |
| 1000+ | 12.01 грн |
| 74VHCV574FT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 13.68 грн |
| 74VHCV574FT |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 16mA, 16mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Bits per Element: 8
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.61 грн |
| 10+ | 35.93 грн |
| 25+ | 29.67 грн |
| 100+ | 21.17 грн |
| 250+ | 17.89 грн |
| 500+ | 15.87 грн |
| 1000+ | 13.95 грн |
| TB9051FTG,EL |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOTOR CONTROLLER SINGLE CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Technology: Bi-CMOS
Supplier Device Package: 28-QFN (6x6)
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: MOTOR CONTROLLER SINGLE CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Technology: Bi-CMOS
Supplier Device Package: 28-QFN (6x6)
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TB9051FTG,EL |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOTOR CONTROLLER SINGLE CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 28-PowerQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Technology: Bi-CMOS
Supplier Device Package: 28-QFN (6x6)
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: MOTOR CONTROLLER SINGLE CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 28-PowerQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Technology: Bi-CMOS
Supplier Device Package: 28-QFN (6x6)
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 777.03 грн |
| 10+ | 506.02 грн |
| 25+ | 442.90 грн |
| 100+ | 348.77 грн |
| 250+ | 315.93 грн |
| 500+ | 315.33 грн |
| 1SS372(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.50 грн |
| 6000+ | 4.15 грн |
| 1SS372(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 10017 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.73 грн |
| 20+ | 16.85 грн |
| 100+ | 8.51 грн |
| 500+ | 6.52 грн |
| 1000+ | 4.84 грн |
| TCR3RM10A,LF(SE |
|
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 1.0V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
Description: LDO REG 1.0V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
товару немає в наявності
В кошику
од. на суму грн.
| TCR3RM10A,LF(SE |
|
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG 1.0V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
Description: LDO REG 1.0V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 1V
Control Features: Current Limit, Enable
Part Status: Active
Protection Features: Over Current, Over Temperature
на замовлення 9950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.46 грн |
| 12+ | 29.98 грн |
| 25+ | 24.64 грн |
| 100+ | 17.49 грн |
| 250+ | 14.72 грн |
| 500+ | 13.01 грн |
| 1000+ | 11.40 грн |
| 2500+ | 9.88 грн |
| 5000+ | 8.95 грн |
| SSM6P39TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.90 грн |
| SSM6P39TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Description: MOSFET 2P-CH 20V 1.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
на замовлення 8608 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 48.03 грн |
| 12+ | 28.58 грн |
| 100+ | 18.23 грн |
| 500+ | 12.92 грн |
| 1000+ | 11.57 грн |
| RN1302,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RN1302,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 2682 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 23+ | 14.87 грн |
| 100+ | 9.32 грн |
| 500+ | 6.48 грн |
| 1000+ | 5.74 грн |
| RN1303,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.85 грн |
| RN1303,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 5890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 23+ | 14.87 грн |
| 100+ | 9.32 грн |
| 500+ | 6.48 грн |
| 1000+ | 5.74 грн |
| TLP781(GRH-TP6,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.