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TCR3UM33A,LF(SE TCR3UM33A,LF(SE Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A&returnFlg=false Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
TCR3UM33A,LF(SE TCR3UM33A,LF(SE Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A&returnFlg=false Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)
9+38.49 грн
14+22.39 грн
25+18.37 грн
100+12.98 грн
250+10.87 грн
500+9.57 грн
1000+8.34 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
7UL1G00FU,LF 7UL1G00FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70727&prodName=7UL1G00FU Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
7UL1G00FU,LF 7UL1G00FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70727&prodName=7UL1G00FU Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 5511 шт:
термін постачання 21-31 дні (днів)
37+8.64 грн
55+5.52 грн
63+4.81 грн
100+3.80 грн
250+3.47 грн
500+3.26 грн
1000+3.05 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
7UL1G17FU,LF 7UL1G17FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70729&prodName=7UL1G17FU Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+3.10 грн
6000+2.88 грн
9000+2.83 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
7UL1G17FU,LF 7UL1G17FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70729&prodName=7UL1G17FU Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 10646 шт:
термін постачання 21-31 дні (днів)
37+8.64 грн
55+5.52 грн
63+4.81 грн
100+3.80 грн
250+3.47 грн
500+3.26 грн
1000+3.05 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
SSM10N954L,EFF SSM10N954L,EFF Toshiba Semiconductor and Storage docget.jsp?did=70605&prodName=SSM10N954L Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SSM10N954L,EFF SSM10N954L,EFF Toshiba Semiconductor and Storage docget.jsp?did=70605&prodName=SSM10N954L Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
на замовлення 9825 шт:
термін постачання 21-31 дні (днів)
5+65.99 грн
10+47.35 грн
100+39.69 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
2SC3668-O,T2CLAF(J 2SC3668-O,T2CLAF(J Toshiba Semiconductor and Storage 2SC3668_2009-12-21.pdf Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
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2SC3665-Y,T2YNSF(J 2SC3665-Y,T2YNSF(J Toshiba Semiconductor and Storage 2SC3665.pdf Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
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2SC3668-Y,F2PANF(J 2SC3668-Y,F2PANF(J Toshiba Semiconductor and Storage 2SC3668_2009-12-21.pdf Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
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2SC3668-Y,T2F(M 2SC3668-Y,T2F(M Toshiba Semiconductor and Storage 2SC3668_2009-12-21.pdf Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2SC3668-Y,T2F(J 2SC3668-Y,T2F(J Toshiba Semiconductor and Storage 2SC3668_2009-12-21.pdf Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
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2SC3665-Y(T2NSW,FM 2SC3665-Y(T2NSW,FM Toshiba Semiconductor and Storage 2SC3665.pdf Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику  од. на суму  грн.
2SC3665-Y,T2F(J 2SC3665-Y,T2F(J Toshiba Semiconductor and Storage 2SC3665.pdf Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику  од. на суму  грн.
2SC3668-Y,T2WNLF(J 2SC3668-Y,T2WNLF(J Toshiba Semiconductor and Storage 2SC3668_2009-12-21.pdf Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2SC3665-Y,T2NSF(J 2SC3665-Y,T2NSF(J Toshiba Semiconductor and Storage 2SC3665.pdf Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику  од. на суму  грн.
2SC4738-GR,LXHF 2SC4738-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.09 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SC4738-GR,LXHF 2SC4738-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19314&prodName=2SC4738 Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3952 шт:
термін постачання 21-31 дні (днів)
16+20.42 грн
26+11.95 грн
100+7.45 грн
500+5.16 грн
1000+4.57 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
TLP3407SRA4(TP,E TLP3407SRA4(TP,E Toshiba Semiconductor and Storage TLP3407SRA4_datasheet_en_20210910.pdf?did=139688&prodName=TLP3407SRA4 Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
TLP3407SRA4(TP,E TLP3407SRA4(TP,E Toshiba Semiconductor and Storage TLP3407SRA4_datasheet_en_20210910.pdf?did=139688&prodName=TLP3407SRA4 Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Cut Tape (CT)
товару немає в наявності
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TLP3823F(F TLP3823F(F Toshiba Semiconductor and Storage docget.jsp?did=57854&prodName=TLP3823 Description: SSR RELAY SPST-NO 3A 0-100V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CUS10I40A(TE85L,QM Toshiba Semiconductor and Storage docget.jsp?did=14634&prodName=CUS10I40A Description: DIODE SCHOTTKY 40V 1A US-FLAT
товару немає в наявності
В кошику  од. на суму  грн.
RN1908FE,LXHF(CT RN1908FE,LXHF(CT Toshiba Semiconductor and Storage RN1908FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1908FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+5.22 грн
8000+4.61 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
RN1908FE,LXHF(CT RN1908FE,LXHF(CT Toshiba Semiconductor and Storage RN1908FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1908FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
15+21.21 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
RN1908,LXHF(CT RN1908,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+6.87 грн
6000+6.07 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
RN1908,LXHF(CT RN1908,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
13+25.92 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
TCR5RG33A,LF TCR5RG33A,LF Toshiba Semiconductor and Storage TCR5RG09A_datasheet_en_20240308.pdf?did=70203&prodName=TCR5RG09A Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+10.42 грн
10000+9.31 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TCR5RG33A,LF TCR5RG33A,LF Toshiba Semiconductor and Storage TCR5RG09A_datasheet_en_20240308.pdf?did=70203&prodName=TCR5RG09A Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 16468 шт:
термін постачання 21-31 дні (днів)
7+51.85 грн
11+29.58 грн
25+24.39 грн
100+17.37 грн
250+14.65 грн
500+12.97 грн
1000+11.38 грн
2500+9.88 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
TC7SB66CFU,LF(CT TC7SB66CFU,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=8403&prodName=TC7SB67CFU Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+7.26 грн
6000+6.78 грн
9000+6.68 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TC7SB66CFU,LF(CT TC7SB66CFU,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=8403&prodName=TC7SB67CFU Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 13719 шт:
термін постачання 21-31 дні (днів)
18+18.07 грн
25+12.10 грн
29+10.71 грн
100+8.61 грн
250+7.93 грн
500+7.52 грн
1000+7.07 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
SSM3J378R,LF SSM3J378R,LF Toshiba Semiconductor and Storage datasheet_en_20220119.pdf?did=59205 Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+5.78 грн
6000+5.44 грн
9000+4.82 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM3J378R,LF SSM3J378R,LF Toshiba Semiconductor and Storage datasheet_en_20220119.pdf?did=59205 Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
на замовлення 13676 шт:
термін постачання 21-31 дні (днів)
12+26.71 грн
17+17.93 грн
100+9.02 грн
500+7.50 грн
1000+5.84 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
SSM3J35CT,L3F SSM3J35CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=11272&prodName=SSM3J35CT Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SSM3J35CT,L3F SSM3J35CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=11272&prodName=SSM3J35CT Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
на замовлення 3009 шт:
термін постачання 21-31 дні (днів)
17+18.85 грн
28+11.20 грн
100+6.96 грн
500+4.80 грн
1000+4.24 грн
2000+3.77 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
TK065U65Z,RQ TK065U65Z,RQ Toshiba Semiconductor and Storage TK065U65Z.pdf Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+261.01 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
TK065U65Z,RQ TK065U65Z,RQ Toshiba Semiconductor and Storage TK065U65Z.pdf Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 5672 шт:
термін постачання 21-31 дні (днів)
1+589.17 грн
10+387.76 грн
100+307.65 грн
В кошику  од. на суму  грн.
SSM3K72KFS,LXHF SSM3K72KFS,LXHF Toshiba Semiconductor and Storage docget.jsp?did=35722&prodName=SSM3K72KFS Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.43 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM3K72KFS,LXHF SSM3K72KFS,LXHF Toshiba Semiconductor and Storage docget.jsp?did=35722&prodName=SSM3K72KFS Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 6695 шт:
термін постачання 21-31 дні (днів)
15+21.21 грн
25+12.56 грн
100+7.83 грн
500+5.42 грн
1000+4.80 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SSM6N62TU,LXHF SSM6N62TU,LXHF Toshiba Semiconductor and Storage SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU Description: MOSFET 2N-CH 20V 0.8A UF6
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6N62TU,LXHF SSM6N62TU,LXHF Toshiba Semiconductor and Storage SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU Description: MOSFET 2N-CH 20V 0.8A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
10+32.99 грн
12+27.16 грн
100+18.84 грн
500+13.81 грн
1000+11.22 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
TPN7R006PL,L1Q TPN7R006PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=53588&prodName=TPN7R006PL Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.81 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TPN7R006PL,L1Q TPN7R006PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=53588&prodName=TPN7R006PL Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
на замовлення 6313 шт:
термін постачання 21-31 дні (днів)
4+100.55 грн
10+61.12 грн
100+40.57 грн
500+29.77 грн
1000+27.10 грн
2000+24.85 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
TLP781(Y-TP6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TLP781(D4GRL-LF6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Number of Channels: 1
Part Status: Obsolete
товару немає в наявності
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TLP781(D4-GB-LF6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TLP781(DLT-HR,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP781(BLL-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(D4GRH-LF6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(D4-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
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TLP781(D4,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(TP6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(D4-YH-LF6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(D4-BLL,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(YH-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(D4-YH-TP6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
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TLP781(D4-GRL-FD,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP781(D4GRH-TP6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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TLP781(D4-BL-TP6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
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TLP781(D4-GRL,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TCR3UM33A,LF(SE docget.jsp?did=63293&prodName=TCR3UM085A&returnFlg=false
TCR3UM33A,LF(SE
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
TCR3UM33A,LF(SE docget.jsp?did=63293&prodName=TCR3UM085A&returnFlg=false
TCR3UM33A,LF(SE
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.273V @ 300mA
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
9+38.49 грн
14+22.39 грн
25+18.37 грн
100+12.98 грн
250+10.87 грн
500+9.57 грн
1000+8.34 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
7UL1G00FU,LF docget.jsp?did=70727&prodName=7UL1G00FU
7UL1G00FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
7UL1G00FU,LF docget.jsp?did=70727&prodName=7UL1G00FU
7UL1G00FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 5511 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
37+8.64 грн
55+5.52 грн
63+4.81 грн
100+3.80 грн
250+3.47 грн
500+3.26 грн
1000+3.05 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
7UL1G17FU,LF docget.jsp?did=70729&prodName=7UL1G17FU
7UL1G17FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+3.10 грн
6000+2.88 грн
9000+2.83 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
7UL1G17FU,LF docget.jsp?did=70729&prodName=7UL1G17FU
7UL1G17FU,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 3.6V USV
Supplier Device Package: USV
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 10646 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
37+8.64 грн
55+5.52 грн
63+4.81 грн
100+3.80 грн
250+3.47 грн
500+3.26 грн
1000+3.05 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
SSM10N954L,EFF docget.jsp?did=70605&prodName=SSM10N954L
SSM10N954L,EFF
Виробник: Toshiba Semiconductor and Storage
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
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Мінімальне замовлення: 10000 шт
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SSM10N954L,EFF docget.jsp?did=70605&prodName=SSM10N954L
SSM10N954L,EFF
Виробник: Toshiba Semiconductor and Storage
Description: COMMON-DRAIN NCH MOSFET, 12V, 13
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TCSPAC-153001
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
на замовлення 9825 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5+65.99 грн
10+47.35 грн
100+39.69 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
2SC3668-O,T2CLAF(J 2SC3668_2009-12-21.pdf
2SC3668-O,T2CLAF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
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2SC3665-Y,T2YNSF(J 2SC3665.pdf
2SC3665-Y,T2YNSF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
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2SC3668-Y,F2PANF(J 2SC3668_2009-12-21.pdf
2SC3668-Y,F2PANF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
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2SC3668-Y,T2F(M 2SC3668_2009-12-21.pdf
2SC3668-Y,T2F(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
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2SC3668-Y,T2F(J 2SC3668_2009-12-21.pdf
2SC3668-Y,T2F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
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2SC3665-Y(T2NSW,FM 2SC3665.pdf
2SC3665-Y(T2NSW,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
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2SC3665-Y,T2F(J 2SC3665.pdf
2SC3665-Y,T2F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
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2SC3668-Y,T2WNLF(J 2SC3668_2009-12-21.pdf
2SC3668-Y,T2WNLF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A MSTM
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: MSTM
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
2SC3665-Y,T2NSF(J 2SC3665.pdf
2SC3665-Y,T2NSF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800MA 120V SC71
товару немає в наявності
В кошику  од. на суму  грн.
2SC4738-GR,LXHF docget.jsp?did=19314&prodName=2SC4738
2SC4738-GR,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+4.09 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SC4738-GR,LXHF docget.jsp?did=19314&prodName=2SC4738
2SC4738-GR,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Qualification: AEC-Q101
на замовлення 3952 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
16+20.42 грн
26+11.95 грн
100+7.45 грн
500+5.16 грн
1000+4.57 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
TLP3407SRA4(TP,E TLP3407SRA4_datasheet_en_20210910.pdf?did=139688&prodName=TLP3407SRA4
TLP3407SRA4(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
TLP3407SRA4(TP,E TLP3407SRA4_datasheet_en_20210910.pdf?did=139688&prodName=TLP3407SRA4
TLP3407SRA4(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 600MA 0-60V
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 Ohms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: S-VSON16T (2x6.25)
Load Current: 600 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 16-LDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TLP3823F(F docget.jsp?did=57854&prodName=TLP3823
TLP3823F(F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CUS10I40A(TE85L,QM docget.jsp?did=14634&prodName=CUS10I40A
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A US-FLAT
товару немає в наявності
В кошику  од. на суму  грн.
RN1908FE,LXHF(CT RN1908FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1908FE
RN1908FE,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Qualification: AEC-Q101
Grade: Automotive
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4000+5.22 грн
8000+4.61 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
RN1908FE,LXHF(CT RN1908FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1908FE
RN1908FE,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
15+21.21 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
RN1908,LXHF(CT docget.jsp?did=18826&prodName=RN1908
RN1908,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+6.87 грн
6000+6.07 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
RN1908,LXHF(CT docget.jsp?did=18826&prodName=RN1908
RN1908,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=2
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
13+25.92 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
TCR5RG33A,LF TCR5RG09A_datasheet_en_20240308.pdf?did=70203&prodName=TCR5RG09A
TCR5RG33A,LF
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+10.42 грн
10000+9.31 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TCR5RG33A,LF TCR5RG09A_datasheet_en_20240308.pdf?did=70203&prodName=TCR5RG09A
TCR5RG33A,LF
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 3.3V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
на замовлення 16468 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
7+51.85 грн
11+29.58 грн
25+24.39 грн
100+17.37 грн
250+14.65 грн
500+12.97 грн
1000+11.38 грн
2500+9.88 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
TC7SB66CFU,LF(CT docget.jsp?did=8403&prodName=TC7SB67CFU
TC7SB66CFU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+7.26 грн
6000+6.78 грн
9000+6.68 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TC7SB66CFU,LF(CT docget.jsp?did=8403&prodName=TC7SB67CFU
TC7SB66CFU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NC X 1 7OHM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 7Ohm
Supplier Device Package: USV
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
на замовлення 13719 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
18+18.07 грн
25+12.10 грн
29+10.71 грн
100+8.61 грн
250+7.93 грн
500+7.52 грн
1000+7.07 грн
Мінімальне замовлення: 18 шт
В кошику  од. на суму  грн.
SSM3J378R,LF datasheet_en_20220119.pdf?did=59205
SSM3J378R,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+5.78 грн
6000+5.44 грн
9000+4.82 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM3J378R,LF datasheet_en_20220119.pdf?did=59205
SSM3J378R,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
на замовлення 13676 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
12+26.71 грн
17+17.93 грн
100+9.02 грн
500+7.50 грн
1000+5.84 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
SSM3J35CT,L3F docget.jsp?did=11272&prodName=SSM3J35CT
SSM3J35CT,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SSM3J35CT,L3F docget.jsp?did=11272&prodName=SSM3J35CT
SSM3J35CT,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CHANNEL 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
на замовлення 3009 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
17+18.85 грн
28+11.20 грн
100+6.96 грн
500+4.80 грн
1000+4.24 грн
2000+3.77 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
TK065U65Z,RQ TK065U65Z.pdf
TK065U65Z,RQ
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
2000+261.01 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
TK065U65Z,RQ TK065U65Z.pdf
TK065U65Z,RQ
Виробник: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=270W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 5672 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
1+589.17 грн
10+387.76 грн
100+307.65 грн
В кошику  од. на суму  грн.
SSM3K72KFS,LXHF docget.jsp?did=35722&prodName=SSM3K72KFS
SSM3K72KFS,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+4.43 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM3K72KFS,LXHF docget.jsp?did=35722&prodName=SSM3K72KFS
SSM3K72KFS,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 6695 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
15+21.21 грн
25+12.56 грн
100+7.83 грн
500+5.42 грн
1000+4.80 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
SSM6N62TU,LXHF SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU
SSM6N62TU,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6N62TU,LXHF SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU
SSM6N62TU,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 1455 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
10+32.99 грн
12+27.16 грн
100+18.84 грн
500+13.81 грн
1000+11.22 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
TPN7R006PL,L1Q docget.jsp?did=53588&prodName=TPN7R006PL
TPN7R006PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+24.81 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
TPN7R006PL,L1Q docget.jsp?did=53588&prodName=TPN7R006PL
TPN7R006PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 54A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
на замовлення 6313 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+100.55 грн
10+61.12 грн
100+40.57 грн
500+29.77 грн
1000+27.10 грн
2000+24.85 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
TLP781(Y-TP6,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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TLP781(D4GRL-LF6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Number of Channels: 1
Part Status: Obsolete
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TLP781(D4-GB-LF6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(DLT-HR,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP781(BLL-LF6,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(D4GRH-LF6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(D4-LF6,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
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TLP781(D4,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(TP6,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(D4-YH-LF6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(D4-BLL,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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TLP781(YH-LF6,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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TLP781(D4-YH-TP6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
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TLP781(D4-GRL-FD,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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TLP781(D4GRH-TP6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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TLP781(D4-BL-TP6,F TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
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TLP781(D4-GRL,F) TLP781(F).pdf
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
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