Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 178 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
74LCX125FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 14TSSOPPart Status: Active Supplier Device Package: 14-TSSOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 4 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 3240 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TLP351(TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 3750Vrms Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TLP351(TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 3750Vrms Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 3078 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
GT40RR21(STA1,E | Toshiba Semiconductor and Storage |
Description: IGBT 1200V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 540µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 230 W |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TPH4R50ANH1,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TPH4R50ANH1,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
на замовлення 5167 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
CRH01(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 1A SFLATCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
|
CRH01(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 1A SFLATReverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: S-FLAT (1.6x3.5) Current - Average Rectified (Io): 1A Technology: Standard |
на замовлення 1148 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN105,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.05V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN105,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.05V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TCR2EN125,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.25V IOUT=200MAPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 1.25V Control Features: Enable Voltage Dropout (Max): 0.55V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
| TCR2EN125,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.25V IOUT=200MAPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 1.25V Control Features: Enable Voltage Dropout (Max): 0.55V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
|
TCR2LN32,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2LN32,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 9880 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN15,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.5V IOUT=200MA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2EN15,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.2V I=200MA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2LN12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.2V I=200MA |
на замовлення 7470 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT1.0V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT1.0V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN13,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.3V I=200MA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2LN13,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.3V I=200MA |
на замовлення 9998 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN25,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MAPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.36V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN25,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MAPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.36V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN285,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.85V IOUT=200MA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2EN285,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.85V IOUT=200MA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN32,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN32,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNVoltage Dropout (Max): 0.28V @ 150mA Control Features: Enable Voltage - Output (Min/Fixed): 3.2V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 2 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN11,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.1V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN11,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.1V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN08,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.8V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN08,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.8V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN31,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.1V I=200MA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2LN31,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.1V I=200MA |
на замовлення 9400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2EN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNProtection Features: Over Current Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA Control Features: Enable Voltage - Output (Min/Fixed): 2.1V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
TCR2EN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNProtection Features: Over Current Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA Control Features: Enable Voltage - Output (Min/Fixed): 2.1V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 60 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN09,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.9V I=200MAPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.46V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCR2LN09,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.9V I=200MAProtection Features: Over Current Voltage Dropout (Max): 1.46V @ 150mA Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 0.9V Supplier Device Package: 4-SDFN (0.8x0.8) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 2 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
MSZ30V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC SMINIPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Voltage - Breakdown (Min): 28V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 4A (8/20µs) Capacitance @ Frequency: 21pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
MSZ30V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC SMINIPower Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Voltage - Breakdown (Min): 28V Unidirectional Channels: 1 Supplier Device Package: S-Mini Voltage - Reverse Standoff (Typ): 30V Current - Peak Pulse (10/1000µs): 4A (8/20µs) Capacitance @ Frequency: 21pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TC74HC157AP(F) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 4 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-DIP |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
|
GT40QR21(STA1,E,D | Toshiba Semiconductor and Storage |
Description: IGBT 1200V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 290µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 230 W |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
74VHC174FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SGL 6-BIT 16-TSSOPBPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 120 MHz Input Capacitance: 4 pF Supplier Device Package: 16-TSSOPB Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF Grade: Automotive Number of Bits per Element: 6 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| 74LCX374FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
|
|
TLP2710(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.9V (Max) Data Rate: 5MBd Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 11ns, 13ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 1 Current - Output / Channel: 10 mA |
на замовлення 106 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCK22925G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6EFault Protection: Reverse Current Supplier Device Package: 6-WCSPE (0.80x1.2) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.1V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 25mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TCK22925G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6EFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 25mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WCSPE (0.80x1.2) Fault Protection: Reverse Current |
на замовлення 29063 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
74HCT4053D | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDT X 3 110OHM 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 110Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 4.5V ~ 5.5V Crosstalk: -90dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 5Ohm (Typ) Switch Time (Ton, Toff) (Max): 45ns, 59ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
74HCT4053D | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDT X 3 110OHM 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 110Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 4.5V ~ 5.5V Crosstalk: -90dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 5Ohm (Typ) Switch Time (Ton, Toff) (Max): 45ns, 59ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
на замовлення 6193 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BAV70,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARR GP 100V 215MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
|
BAV70,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARR GP 100V 215MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
на замовлення 11930 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
| TLP785(TELS,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER TRANS OUT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
CUZ30V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC USCPackaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
CUZ30V,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
на замовлення 1357 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK25S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 25A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
TK25S06N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 25A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2381 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
BAS516,H3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 100V 250MA ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
BAS516,H3F | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 100V 250MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
RN1131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms Resistors Included: R1 Only |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||
|
RN1131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms Resistors Included: R1 Only |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
| 74LCX125FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Part Status: Active
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Part Status: Active
Supplier Device Package: 14-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 3240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.16 грн |
| 11+ | 28.40 грн |
| 25+ | 23.40 грн |
| 100+ | 16.62 грн |
| 250+ | 13.99 грн |
| 500+ | 12.38 грн |
| 1000+ | 10.84 грн |
| TLP351(TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 45.34 грн |
| 3000+ | 41.66 грн |
| TLP351(TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 3078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 73.68 грн |
| 100+ | 55.61 грн |
| 500+ | 44.68 грн |
| GT40RR21(STA1,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 363.16 грн |
| 25+ | 202.22 грн |
| TPH4R50ANH1,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 38.01 грн |
| TPH4R50ANH1,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
на замовлення 5167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 142.73 грн |
| 10+ | 87.81 грн |
| 100+ | 59.40 грн |
| 500+ | 44.35 грн |
| 1000+ | 42.04 грн |
| CRH01(TE85R,Q,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 200V 1A SFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CRH01(TE85R,Q,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Technology: Standard
Description: DIODE STANDARD 200V 1A SFLAT
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Technology: Standard
на замовлення 1148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.78 грн |
| 11+ | 27.95 грн |
| 100+ | 17.91 грн |
| 500+ | 12.73 грн |
| 1000+ | 11.42 грн |
| TCR2LN105,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.05V I=200MA
Description: LDO REG VOUT=1.05V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.05 грн |
| TCR2LN105,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.05V I=200MA
Description: LDO REG VOUT=1.05V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 14+ | 22.91 грн |
| 25+ | 20.65 грн |
| 100+ | 13.40 грн |
| 250+ | 11.29 грн |
| 500+ | 9.17 грн |
| 1000+ | 6.94 грн |
| 2500+ | 6.24 грн |
| 5000+ | 5.90 грн |
| TCR2EN125,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.27 грн |
| TCR2EN125,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 16+ | 19.93 грн |
| 25+ | 18.02 грн |
| 100+ | 11.68 грн |
| 250+ | 9.84 грн |
| 500+ | 7.99 грн |
| 1000+ | 6.05 грн |
| 2500+ | 5.44 грн |
| 5000+ | 5.14 грн |
| TCR2LN32,LSF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN32,LSF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 9880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.69 грн |
| 39+ | 8.02 грн |
| 44+ | 7.06 грн |
| 100+ | 5.63 грн |
| 250+ | 5.15 грн |
| 500+ | 4.87 грн |
| 1000+ | 4.56 грн |
| 2500+ | 4.31 грн |
| 5000+ | 4.16 грн |
| TCR2EN15,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2EN15,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN12,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V I=200MA
Description: LDO REG VOUT=1.2V I=200MA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN12,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V I=200MA
Description: LDO REG VOUT=1.2V I=200MA
на замовлення 7470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT1.0V I=200MA
Description: LDO REG VOUT1.0V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.48 грн |
| TCR2LN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT1.0V I=200MA
Description: LDO REG VOUT1.0V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN13,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.3V I=200MA
Description: LDO REG VOUT=1.3V I=200MA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN13,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.3V I=200MA
Description: LDO REG VOUT=1.3V I=200MA
на замовлення 9998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN25,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 4.25 грн |
| TCR2LN25,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 16+ | 20.16 грн |
| 25+ | 18.20 грн |
| 100+ | 11.79 грн |
| 250+ | 9.93 грн |
| 500+ | 8.07 грн |
| 1000+ | 6.11 грн |
| 2500+ | 5.50 грн |
| 5000+ | 5.19 грн |
| TCR2EN285,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V IOUT=200MA
Description: LDO REG VOUT=2.85V IOUT=200MA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2EN285,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V IOUT=200MA
Description: LDO REG VOUT=2.85V IOUT=200MA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN32,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 4.55 грн |
| TCR2LN32,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.2V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Voltage Dropout (Max): 0.28V @ 150mA
Control Features: Enable
Voltage - Output (Min/Fixed): 3.2V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.72 грн |
| 17+ | 18.33 грн |
| 25+ | 15.00 грн |
| 100+ | 10.53 грн |
| 250+ | 8.79 грн |
| 500+ | 7.72 грн |
| 1000+ | 6.71 грн |
| 2500+ | 5.76 грн |
| 5000+ | 5.18 грн |
| TCR2LN11,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
Description: LDO REG VOUT=1.1V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.48 грн |
| TCR2LN11,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
Description: LDO REG VOUT=1.1V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN08,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
Description: LDO REG VOUT=0.8V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.48 грн |
| TCR2LN08,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
Description: LDO REG VOUT=0.8V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2LN31,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Description: LDO REG VOUT=3.1V I=200MA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2LN31,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Description: LDO REG VOUT=3.1V I=200MA
на замовлення 9400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 20.69 грн |
| 25+ | 18.69 грн |
| 100+ | 12.14 грн |
| 250+ | 10.22 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.28 грн |
| 2500+ | 5.65 грн |
| 5000+ | 5.34 грн |
| TCR2EN21,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR2EN21,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.89 грн |
| 40+ | 7.79 грн |
| 45+ | 6.87 грн |
| 100+ | 5.49 грн |
| 250+ | 5.02 грн |
| 500+ | 4.75 грн |
| 1000+ | 4.44 грн |
| 2500+ | 4.20 грн |
| 5000+ | 4.06 грн |
| TCR2LN09,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 5.82 грн |
| TCR2LN09,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Protection Features: Over Current
Voltage Dropout (Max): 1.46V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 0.9V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: LDO REG VOUT=0.9V I=200MA
Protection Features: Over Current
Voltage Dropout (Max): 1.46V @ 150mA
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 0.9V
Supplier Device Package: 4-SDFN (0.8x0.8)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 2 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.13 грн |
| 14+ | 22.07 грн |
| 25+ | 19.88 грн |
| 100+ | 12.90 грн |
| 250+ | 10.86 грн |
| 500+ | 8.83 грн |
| 1000+ | 6.68 грн |
| 2500+ | 6.01 грн |
| 5000+ | 5.68 грн |
| MSZ30V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TVS DIODE 30VWM 47.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.05 грн |
| MSZ30V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE 30VWM 47.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 20+ | 15.96 грн |
| 100+ | 7.76 грн |
| 500+ | 6.07 грн |
| 1000+ | 4.22 грн |
| TC74HC157AP(F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| GT40QR21(STA1,E,D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 290µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 230 W
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 359.99 грн |
| 25+ | 200.76 грн |
| 74VHC174FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 6-BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
Description: IC FF D-TYPE SGL 6-BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74LCX374FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP2710(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.9V (Max)
Data Rate: 5MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 11ns, 13ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.25 грн |
| 10+ | 72.84 грн |
| TCK22925G,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Fault Protection: Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 25mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Fault Protection: Reverse Current
Supplier Device Package: 6-WCSPE (0.80x1.2)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 25mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 12.23 грн |
| 10000+ | 10.85 грн |
| 15000+ | 10.38 грн |
| 25000+ | 9.25 грн |
| TCK22925G,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Reverse Current
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Reverse Current
на замовлення 29063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.51 грн |
| 10+ | 33.14 грн |
| 100+ | 21.36 грн |
| 500+ | 15.28 грн |
| 1000+ | 13.75 грн |
| 2000+ | 12.45 грн |
| 74HCT4053D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 8.47 грн |
| 5000+ | 7.91 грн |
| 74HCT4053D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 110OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 110Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 45ns, 59ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
на замовлення 6193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.83 грн |
| 23+ | 13.83 грн |
| 25+ | 12.28 грн |
| 100+ | 9.91 грн |
| 250+ | 9.14 грн |
| 500+ | 8.68 грн |
| 1000+ | 8.16 грн |
| BAV70,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.53 грн |
| 6000+ | 2.17 грн |
| 9000+ | 2.04 грн |
| BAV70,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 11930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.69 грн |
| 41+ | 7.56 грн |
| 100+ | 4.65 грн |
| 500+ | 3.17 грн |
| 1000+ | 2.78 грн |
| TLP785(TELS,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Description: PHOTOCOUPLER TRANS OUT
товару немає в наявності
В кошику
од. на суму грн.
| CUZ30V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CUZ30V,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 47.5VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
на замовлення 1357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.31 грн |
| 46+ | 6.72 грн |
| 100+ | 3.89 грн |
| 500+ | 3.53 грн |
| 1000+ | 3.34 грн |
| TK25S06N1L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 25.92 грн |
| TK25S06N1L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 25A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 97.53 грн |
| 10+ | 59.25 грн |
| 100+ | 39.33 грн |
| 500+ | 28.90 грн |
| 1000+ | 26.32 грн |
| BAS516,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BAS516,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE STANDARD 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| RN1131MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 1.93 грн |
| RN1131MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.10 грн |
| 45+ | 6.80 грн |
| 100+ | 4.20 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.51 грн |
| 2000+ | 2.21 грн |

















