Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13489) > Сторінка 178 з 225
| Фото | Назва | Виробник | Інформація |
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RN2406,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 5800 шт: термін постачання 21-31 дні (днів) |
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RN2306,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN2306,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 2892 шт: термін постачання 21-31 дні (днів) |
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2SC2873-Y(TE12L,ZC | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A PW-MINIPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PW-MINI Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC2873-Y(TE12L,ZC | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 2A PW-MINIPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PW-MINI Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC2881-Y(TE12L,ZC | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.8A PW-MINIPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PW-MINI Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC2881-Y(TE12L,ZC | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.8A PW-MINIPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PW-MINI Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 3365 шт: термін постачання 21-31 дні (днів) |
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TPC8132,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 7A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TPC8132,LQ(S | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 200µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V |
на замовлення 1316 шт: термін постачання 21-31 дні (днів) |
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TB6640FTG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVER, 40V, 3A, QPackaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 3V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 38V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB6640FTG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVER, 40V, 3A, QPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (2) Voltage - Supply: 3V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 38V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 3983 шт: термін постачання 21-31 дні (днів) |
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74HC4066D | Toshiba Semiconductor and Storage |
Description: IC MUX QUAD 1:1 80OHM 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 80Ohm -3db Bandwidth: 200MHz Supplier Device Package: 14-SOIC Voltage - Supply, Single (V+): 2V ~ 12V Crosstalk: -60dB @ 1MHz Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm (Typ) Switch Time (Ton, Toff) (Max): 12ns, 12ns Channel Capacitance (CS(off), CD(off)): 3pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 4 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TLP3825(LF5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.5A 0-200VPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 1.5 A Supplier Device Package: 8-SMD Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 500 mOhms |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TLP3825F(LF4,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1.5A 0-200VPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 1.5 A Supplier Device Package: 8-SMD Part Status: Active Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 500 mOhms |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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| TLP3823(LF5,F | Toshiba Semiconductor and Storage |
Description: PHOTORELAY; HIGH ION / LOW RON; |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TLP3823F(LF4,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-100VPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 3 A Supplier Device Package: 8-SMD Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 150 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CRZ12(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 12V 700MW SFLATPackaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: S-FLAT (1.6x3.5) Power - Max: 700 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRZ12(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 12V 700MW SFLATPackaging: Cut Tape (CT) Tolerance: ±10% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: S-FLAT (1.6x3.5) Power - Max: 700 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 8 V |
на замовлення 510 шт: термін постачання 21-31 дні (днів) |
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74LCX125FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-TSSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LCX125FT | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-TSSOP Part Status: Active |
на замовлення 3240 шт: термін постачання 21-31 дні (днів) |
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TLP351(TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 3750Vrms Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP351(TP1,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 3750Vrms Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 3302 шт: термін постачання 21-31 дні (днів) |
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GT40RR21(STA1,E | Toshiba Semiconductor and Storage |
Description: IGBT 1200V 40A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 600 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A Supplier Device Package: TO-3P(N) Switching Energy: -, 540µJ (off) Test Condition: 280V, 40A, 10Ohm, 20V Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 230 W |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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TPH4R50ANH1,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH4R50ANH1,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
на замовлення 5337 шт: термін постачання 21-31 дні (днів) |
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CRH01(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 1A SFLATPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRH01(TE85R,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 1A SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2358 шт: термін постачання 21-31 дні (днів) |
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TCR2LN105,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.05V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN105,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG VOUT=1.05V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN125,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.25V IOUT=200MAPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 1.25V Control Features: Enable Voltage Dropout (Max): 0.55V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| TCR2EN125,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.25V IOUT=200MAPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 1.25V Control Features: Enable Voltage Dropout (Max): 0.55V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN32,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN32,LSF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 9880 шт: термін постачання 21-31 дні (днів) |
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TCR2EN15,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.5V IOUT=200MA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2EN15,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.5V IOUT=200MA |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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TCR2LN12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.2V I=200MA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN12,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.2V I=200MA |
на замовлення 7470 шт: термін постачання 21-31 дні (днів) |
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TCR2LN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT1.0V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN10,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT1.0V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN13,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.3V I=200MA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN13,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.3V I=200MA |
на замовлення 9998 шт: термін постачання 21-31 дні (днів) |
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TCR2LN25,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MAPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.36V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN25,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.5V I=200MAPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.36V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2EN285,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.85V IOUT=200MA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2EN285,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=2.85V IOUT=200MA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN32,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN32,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN11,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.1V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN11,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=1.1V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN08,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.8V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN08,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.8V I=200MA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN31,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.1V I=200MA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2LN31,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.1V I=200MA |
на замовлення 9400 шт: термін постачання 21-31 дні (днів) |
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TCR2EN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.1V Control Features: Enable Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2EN21,LF(SE | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.1V 200MA 4-SDFNPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 2.1V Control Features: Enable Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA Protection Features: Over Current |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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TCR2LN09,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.9V I=200MAPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.46V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LN09,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=0.9V I=200MAPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.46V @ 150mA Protection Features: Over Current |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MSZ30V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MSZ30V,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 30VWM 47.5VC SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 21pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: S-Mini Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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TC74HC157AP(F) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 4 X 2:1 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 4 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-DIP |
товару немає в наявності |
В кошику од. на суму грн. |
| RN2406,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 23+ | 13.95 грн |
| 100+ | 8.72 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.35 грн |
| RN2306,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RN2306,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 2892 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 28+ | 11.40 грн |
| 100+ | 7.63 грн |
| 500+ | 5.49 грн |
| 1000+ | 4.94 грн |
| 2SC2873-Y(TE12L,ZC |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SC2873-Y(TE12L,ZC |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 2A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
на замовлення 6 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 2SC2881-Y(TE12L,ZC |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.8A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS NPN 120V 0.8A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 14.20 грн |
| 2000+ | 12.38 грн |
| 3000+ | 11.73 грн |
| 2SC2881-Y(TE12L,ZC |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.8A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS NPN 120V 0.8A PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PW-MINI
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 3365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.00 грн |
| 10+ | 31.90 грн |
| 100+ | 20.57 грн |
| 500+ | 14.71 грн |
| TPC8132,LQ(S |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
Description: MOSFET P-CH 40V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
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| TPC8132,LQ(S |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
Description: MOSFET P-CH 40V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 10 V
на замовлення 1316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.62 грн |
| 10+ | 68.81 грн |
| 100+ | 45.91 грн |
| 500+ | 33.86 грн |
| 1000+ | 30.89 грн |
| TB6640FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER, 40V, 3A, Q
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: BRUSHED MOTOR DRIVER, 40V, 3A, Q
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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| TB6640FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVER, 40V, 3A, Q
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: BRUSHED MOTOR DRIVER, 40V, 3A, Q
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 3983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.52 грн |
| 10+ | 129.02 грн |
| 25+ | 117.92 грн |
| 100+ | 99.17 грн |
| 250+ | 93.69 грн |
| 500+ | 90.40 грн |
| 1000+ | 86.24 грн |
| 74HC4066D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
Description: IC MUX QUAD 1:1 80OHM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 80Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 14-SOIC
Voltage - Supply, Single (V+): 2V ~ 12V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Typ)
Switch Time (Ton, Toff) (Max): 12ns, 12ns
Channel Capacitance (CS(off), CD(off)): 3pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 12.26 грн |
| 5000+ | 11.46 грн |
| TLP3825(LF5,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.5 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.5 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 604.48 грн |
| 50+ | 422.39 грн |
| TLP3825F(LF4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.5 A
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
Description: SSR RELAY SPST-NO 1.5A 0-200V
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 1.5 A
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 500 mOhms
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 424.79 грн |
| TLP3823(LF5,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTORELAY; HIGH ION / LOW RON;
Description: PHOTORELAY; HIGH ION / LOW RON;
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| TLP3823F(LF4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 150 mOhms
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3 A
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 150 mOhms
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| CRZ12(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Description: DIODE ZENER 12V 700MW SFLAT
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
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| CRZ12(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 12V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Description: DIODE ZENER 12V 700MW SFLAT
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: S-FLAT (1.6x3.5)
Power - Max: 700 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.82 грн |
| 10+ | 32.13 грн |
| 100+ | 20.73 грн |
| 500+ | 14.83 грн |
| 74LCX125FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Part Status: Active
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| 74LCX125FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Part Status: Active
на замовлення 3240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.34 грн |
| 11+ | 29.66 грн |
| 25+ | 24.43 грн |
| 100+ | 17.35 грн |
| 250+ | 14.61 грн |
| 500+ | 12.92 грн |
| 1000+ | 11.32 грн |
| TLP351(TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 47.87 грн |
| 3000+ | 43.97 грн |
| TLP351(TP1,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 3302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.44 грн |
| 10+ | 77.82 грн |
| 100+ | 58.70 грн |
| 500+ | 47.17 грн |
| GT40RR21(STA1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
Description: IGBT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 600 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
Supplier Device Package: TO-3P(N)
Switching Energy: -, 540µJ (off)
Test Condition: 280V, 40A, 10Ohm, 20V
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 230 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 379.25 грн |
| 25+ | 211.18 грн |
| TPH4R50ANH1,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 39.69 грн |
| TPH4R50ANH1,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET 100V 4.5MOHM SOP-ADV(N)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
на замовлення 5337 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.05 грн |
| 10+ | 91.70 грн |
| 100+ | 62.03 грн |
| 500+ | 46.32 грн |
| 1000+ | 43.91 грн |
| CRH01(TE85R,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| CRH01(TE85R,Q,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2358 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.26 грн |
| 14+ | 23.92 грн |
| 100+ | 17.92 грн |
| 500+ | 12.86 грн |
| 1000+ | 11.52 грн |
| TCR2LN105,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.05V I=200MA
Description: LDO REG VOUT=1.05V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.32 грн |
| TCR2LN105,LF(SE |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.05V I=200MA
Description: LDO REG VOUT=1.05V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.29 грн |
| 14+ | 23.92 грн |
| 25+ | 21.56 грн |
| 100+ | 13.99 грн |
| 250+ | 11.79 грн |
| 500+ | 9.58 грн |
| 1000+ | 7.25 грн |
| 2500+ | 6.52 грн |
| 5000+ | 6.16 грн |
| TCR2EN125,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.51 грн |
| TCR2EN125,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=1.25V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 1.25V
Control Features: Enable
Voltage Dropout (Max): 0.55V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.98 грн |
| 16+ | 20.81 грн |
| 25+ | 18.82 грн |
| 100+ | 12.20 грн |
| 250+ | 10.27 грн |
| 500+ | 8.35 грн |
| 1000+ | 6.32 грн |
| 2500+ | 5.68 грн |
| 5000+ | 5.37 грн |
| TCR2LN32,LSF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN32,LSF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 9880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.25 грн |
| 39+ | 8.37 грн |
| 44+ | 7.37 грн |
| 100+ | 5.87 грн |
| 250+ | 5.38 грн |
| 500+ | 5.08 грн |
| 1000+ | 4.76 грн |
| 2500+ | 4.50 грн |
| 5000+ | 4.35 грн |
| TCR2EN15,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
товару немає в наявності
В кошику
од. на суму грн.
| TCR2EN15,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
Description: LDO REG VOUT=1.5V IOUT=200MA
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN12,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V I=200MA
Description: LDO REG VOUT=1.2V I=200MA
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN12,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.2V I=200MA
Description: LDO REG VOUT=1.2V I=200MA
на замовлення 7470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT1.0V I=200MA
Description: LDO REG VOUT1.0V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.72 грн |
| TCR2LN10,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT1.0V I=200MA
Description: LDO REG VOUT1.0V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN13,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.3V I=200MA
Description: LDO REG VOUT=1.3V I=200MA
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN13,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.3V I=200MA
Description: LDO REG VOUT=1.3V I=200MA
на замовлення 9998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN25,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.44 грн |
| TCR2LN25,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=2.5V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.36V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.98 грн |
| 16+ | 21.05 грн |
| 25+ | 19.01 грн |
| 100+ | 12.32 грн |
| 250+ | 10.37 грн |
| 500+ | 8.43 грн |
| 1000+ | 6.38 грн |
| 2500+ | 5.74 грн |
| 5000+ | 5.42 грн |
| TCR2EN285,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V IOUT=200MA
Description: LDO REG VOUT=2.85V IOUT=200MA
товару немає в наявності
В кошику
од. на суму грн.
| TCR2EN285,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.85V IOUT=200MA
Description: LDO REG VOUT=2.85V IOUT=200MA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN32,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.75 грн |
| TCR2LN32,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 17+ | 19.14 грн |
| 25+ | 15.66 грн |
| 100+ | 10.99 грн |
| 250+ | 9.18 грн |
| 500+ | 8.07 грн |
| 1000+ | 7.01 грн |
| 2500+ | 6.02 грн |
| 5000+ | 5.41 грн |
| TCR2LN11,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
Description: LDO REG VOUT=1.1V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.72 грн |
| TCR2LN11,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V I=200MA
Description: LDO REG VOUT=1.1V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN08,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
Description: LDO REG VOUT=0.8V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.72 грн |
| TCR2LN08,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.8V I=200MA
Description: LDO REG VOUT=0.8V I=200MA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2LN31,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Description: LDO REG VOUT=3.1V I=200MA
товару немає в наявності
В кошику
од. на суму грн.
| TCR2LN31,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.1V I=200MA
Description: LDO REG VOUT=3.1V I=200MA
на замовлення 9400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 15+ | 21.61 грн |
| 25+ | 19.52 грн |
| 100+ | 12.68 грн |
| 250+ | 10.67 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.56 грн |
| 2500+ | 5.91 грн |
| 5000+ | 5.58 грн |
| TCR2EN21,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2EN21,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Protection Features: Over Current
Description: IC REG LINEAR 2.1V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.1V
Control Features: Enable
Voltage Dropout (Max): 0.29V @ 300mA, 0.3V @ 300mA
Protection Features: Over Current
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.42 грн |
| 40+ | 8.13 грн |
| 45+ | 7.18 грн |
| 100+ | 5.73 грн |
| 250+ | 5.25 грн |
| 500+ | 4.96 грн |
| 1000+ | 4.64 грн |
| 2500+ | 4.39 грн |
| 5000+ | 4.24 грн |
| TCR2LN09,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.08 грн |
| TCR2LN09,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=0.9V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.46V @ 150mA
Protection Features: Over Current
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.47 грн |
| 14+ | 23.04 грн |
| 25+ | 20.76 грн |
| 100+ | 13.47 грн |
| 250+ | 11.34 грн |
| 500+ | 9.22 грн |
| 1000+ | 6.97 грн |
| 2500+ | 6.28 грн |
| 5000+ | 5.93 грн |
| MSZ30V,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.23 грн |
| MSZ30V,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 30VWM 47.5VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.84 грн |
| 20+ | 16.67 грн |
| 100+ | 8.10 грн |
| 500+ | 6.34 грн |
| 1000+ | 4.41 грн |
| TC74HC157AP(F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
Description: IC MULTIPLEXER 4 X 2:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 4
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-DIP
товару немає в наявності
В кошику
од. на суму грн.
















