Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 179 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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RN2131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms Resistors Included: R1 Only |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2131MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms Resistors Included: R1 Only |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(GBTPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(GBTPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 4CH TRANS 16-SOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3578 шт: термін постачання 21-31 дні (днів) |
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TLP187(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH DARL 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SOP Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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TLP187(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH DARL 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SOP Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 26535 шт: термін постачання 21-31 дні (днів) |
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2SC2712-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A S-MINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC2712-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 3563 шт: термін постачання 21-31 дні (днів) |
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TB67H450AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC BRUSHED MOTOR DRVR 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 44V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
на замовлення 73500 шт: термін постачання 21-31 дні (днів) |
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TB67H450AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC BRUSHED MOTOR DRVR 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 44V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
на замовлення 76079 шт: термін постачання 21-31 дні (днів) |
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| TLP188(GB,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR COUPLER; DC INPUT,VCEPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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TLP628M(LF5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 1073 шт: термін постачання 21-31 дні (днів) |
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TLP628M(LF1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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TLP628M(GB-LF1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tube Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TLP628MF(GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.400", 10.16mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 193 шт: термін постачання 21-31 дні (днів) |
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TLP628M(GB,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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TLP628M(GB-LF5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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TLP628M(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 350V Turn On / Turn Off Time (Typ): 10µs, 10µs Rise / Fall Time (Typ): 5.5µs, 10µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
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TK110E65Z,S1X | Toshiba Semiconductor and Storage |
Description: 650V DTMOS VI TO-220 110MOHMInput Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 1.02mA Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power Dissipation (Max): 190W (Tc) |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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RN2105,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM, |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2105,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM, |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2106,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM, |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2106,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM, |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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RN2102,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K, |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2102,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K, |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RN2105MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2105MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESM |
на замовлення 6627 шт: термін постачання 21-31 дні (днів) |
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RN2105,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2105,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
на замовлення 5709 шт: термін постачання 21-31 дні (днів) |
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RN2108,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM, |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2108,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM, |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2102MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER= |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2102MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER= |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2101,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMQualification: AEC-Q101 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2101,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMTransistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 5986 шт: термін постачання 21-31 дні (днів) |
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RN2101,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMResistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM, |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2104,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM, |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2107MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2107MFV,L3F(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 15080 шт: термін постачання 21-31 дні (днів) |
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RN2108,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2108,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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RN2107,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMSupplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2107,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2109,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2109,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TTC015B,Q | Toshiba Semiconductor and Storage |
Description: TRANS NPN 80V 2A TO-126NPower - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: TO-126N Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Tray |
на замовлення 329 шт: термін постачання 21-31 дні (днів) |
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RN2903,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA US6Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Qualification: AEC-Q101 Grade: Automotive Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2903,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2PNP 50V 100MA US6Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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TAR5S16U(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.6V 200MA UFVProtection Features: Over Current, Over Temperature PSRR: 70dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.6V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Tape & Reel (TR) Current - Supply (Max): 850 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TAR5S16U(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.6V 200MA UFVCurrent - Supply (Max): 850 µA Protection Features: Over Current, Over Temperature PSRR: 70dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.6V Supplier Device Package: UFV Number of Regulators: 1 Voltage - Input (Max): 15V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Cut Tape (CT) |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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| TLP9148J(YZK-TL,F) | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2066(TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 3.6V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-MFSOP, 5 Lead Rise / Fall Time (Typ): 5ns, 4ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2066(V4-TPL,F) | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2066(V4-TPR,F) | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2066(TPR,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 3.6V Voltage - Forward (Vf) (Typ): 1.6V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-MFSOP, 5 Lead Rise / Fall Time (Typ): 5ns, 4ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 1 Current - Output / Channel: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLP5752(D4-LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP5752(LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tube Voltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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TLP5752H(LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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TLP5752H(D4LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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| RN2131MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN2131MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Resistors Included: R1 Only
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.10 грн |
| 45+ | 6.80 грн |
| 100+ | 4.20 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.51 грн |
| 2000+ | 2.21 грн |
| TLP293-4(GBTPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 44.30 грн |
| TLP293-4(GBTPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3578 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 73.68 грн |
| 100+ | 55.56 грн |
| 500+ | 44.59 грн |
| 1000+ | 42.12 грн |
| TLP187(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH DARL 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH DARL 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 28.07 грн |
| 6000+ | 25.79 грн |
| 9000+ | 25.16 грн |
| 15000+ | 22.94 грн |
| 21000+ | 22.54 грн |
| TLP187(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH DARL 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH DARL 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SOP
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 26535 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 50.17 грн |
| 100+ | 37.15 грн |
| 500+ | 29.43 грн |
| 1000+ | 27.65 грн |
| 2SC2712-BL,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.42 грн |
| 2SC2712-BL,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 3563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.89 грн |
| 42+ | 7.41 грн |
| 100+ | 4.57 грн |
| 500+ | 3.12 грн |
| 1000+ | 2.74 грн |
| TB67H450AFNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
на замовлення 73500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3500+ | 26.35 грн |
| 7000+ | 24.78 грн |
| 10500+ | 24.48 грн |
| 17500+ | 22.67 грн |
| 24500+ | 22.48 грн |
| TB67H450AFNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC BRUSHED MOTOR DRVR 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 44V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
на замовлення 76079 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.09 грн |
| 10+ | 39.40 грн |
| 25+ | 35.46 грн |
| 100+ | 29.21 грн |
| 250+ | 27.27 грн |
| 500+ | 26.10 грн |
| 1000+ | 24.75 грн |
| TLP188(GB,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR COUPLER; DC INPUT,VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR COUPLER; DC INPUT,VCE
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.26 грн |
| 10+ | 37.49 грн |
| 125+ | 24.60 грн |
| TLP628M(LF5,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 1073 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| 100+ | 30.47 грн |
| 500+ | 23.99 грн |
| 1000+ | 22.48 грн |
| TLP628M(LF1,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| TLP628M(GB-LF1,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| TLP628MF(GB,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| 100+ | 30.47 грн |
| TLP628M(GB,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| TLP628M(GB-LF5,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| TLP628M(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 350V
Turn On / Turn Off Time (Typ): 10µs, 10µs
Rise / Fall Time (Typ): 5.5µs, 10µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.85 грн |
| 10+ | 41.46 грн |
| 100+ | 30.47 грн |
| TK110E65Z,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: 650V DTMOS VI TO-220 110MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 190W (Tc)
Description: 650V DTMOS VI TO-220 110MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 190W (Tc)
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 298.93 грн |
| RN2105,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.26 грн |
| RN2105,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=2.2KOHM,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 16+ | 20.23 грн |
| 100+ | 11.47 грн |
| 500+ | 7.12 грн |
| 1000+ | 5.46 грн |
| RN2106,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2106,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 16+ | 20.23 грн |
| 100+ | 11.47 грн |
| 500+ | 7.12 грн |
| 1000+ | 5.46 грн |
| RN2102,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 5.26 грн |
| RN2102,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
Description: AUTO AEC-Q SINGLE PNP Q1BSR=10K,
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.75 грн |
| 16+ | 20.23 грн |
| 100+ | 11.47 грн |
| 500+ | 7.12 грн |
| 1000+ | 5.46 грн |
| RN2105MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN2105MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Description: TRANS PREBIAS PNP 50V 0.1A VESM
на замовлення 6627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 15.07 грн |
| 23+ | 13.29 грн |
| 100+ | 7.23 грн |
| 500+ | 4.18 грн |
| 1000+ | 2.85 грн |
| 2000+ | 2.42 грн |
| RN2105,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.02 грн |
| RN2105,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 5709 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.65 грн |
| 24+ | 12.83 грн |
| 100+ | 6.80 грн |
| 500+ | 4.20 грн |
| 1000+ | 2.86 грн |
| RN2108,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2108,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=22KOHM,
товару немає в наявності
В кошику
од. на суму грн.
| RN2102MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| RN2102MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
Description: AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
товару немає в наявності
В кошику
од. на суму грн.
| RN2101,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.40 грн |
| RN2101,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 5986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 19+ | 16.49 грн |
| 100+ | 8.32 грн |
| 500+ | 6.37 грн |
| 1000+ | 4.73 грн |
| RN2101,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RN2104,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2104,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
Description: AUTO AEC-Q TR PNP Q1BSR=47KOHM,
товару немає в наявності
В кошику
од. на суму грн.
| RN2107MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 1.74 грн |
| RN2107MFV,L3F(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 15080 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.10 грн |
| 49+ | 6.34 грн |
| 100+ | 3.91 грн |
| 500+ | 2.66 грн |
| 1000+ | 2.33 грн |
| 2000+ | 2.06 грн |
| RN2108,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2108,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.65 грн |
| 24+ | 12.83 грн |
| 100+ | 6.80 грн |
| 500+ | 4.20 грн |
| 1000+ | 2.86 грн |
| RN2107,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2107,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RN2109,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2109,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Description: TRANS PREBIAS PNP 50V 0.1A SSM
товару немає в наявності
В кошику
од. на суму грн.
| TTC015B,Q |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 2A TO-126N
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-126N
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tray
Description: TRANS NPN 80V 2A TO-126N
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-126N
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tray
на замовлення 329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 71.36 грн |
| 10+ | 42.91 грн |
| 250+ | 24.15 грн |
| RN2903,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2903,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.37 грн |
| 21+ | 14.81 грн |
| 100+ | 9.31 грн |
| 500+ | 6.49 грн |
| 1000+ | 5.76 грн |
| TAR5S16U(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.6V 200MA UFV
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Current - Supply (Max): 850 µA
Description: IC REG LINEAR 1.6V 200MA UFV
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Current - Supply (Max): 850 µA
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Мінімальне замовлення: 3000 шт
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| TAR5S16U(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.6V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 1.6V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.6V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.58 грн |
| 10+ | 39.25 грн |
| TLP9148J(YZK-TL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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| TLP2066(TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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| TLP2066(V4-TPL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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| TLP2066(V4-TPR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
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В кошику
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| TLP2066(TPR,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.6V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 5ns, 4ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 10 mA
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| TLP5752(D4-LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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од. на суму грн.
| TLP5752(LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 164.93 грн |
| 10+ | 114.61 грн |
| TLP5752H(LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.80 грн |
| 10+ | 92.54 грн |
| 125+ | 69.00 грн |
| TLP5752H(D4LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.80 грн |
| 10+ | 92.54 грн |
| 125+ | 69.00 грн |

















