Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13489) > Сторінка 218 з 225
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TC7WH14FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 3CH 3-INP 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: 8-SSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
на замовлення 6567 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
MG08SDA800E | Toshiba Semiconductor and Storage |
Description: MG08 8TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| MG08SDA600E | Toshiba Semiconductor and Storage |
Description: MG08 6TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
TK125N60Z1,S1F | Toshiba Semiconductor and Storage |
Description: 6OOV DTMOS6 TO-247 125MOHMPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 730µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| TLP3545A(LF1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.5A 0-40VPackaging: Bulk Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 4 A Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 60 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TC7WH08FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 2CH 2-INP 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 34325 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
2SA1941-O(Q) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 140V 10A TO-3PPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(N) Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 60A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 60A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V |
на замовлення 2113 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 30A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
SSM6K818R,LF | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
SSM6K818R,LF | Toshiba Semiconductor and Storage |
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: 6-TSOP-F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 5583 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| TC62D748AFG,EL | Toshiba Semiconductor and Storage |
Description: CONSTANT CURRENT PANEL LED DRIVEPackaging: Cut Tape (CT) Package / Case: 24-SOP (0.236", 6.00mm Width) Mounting Type: Surface Mount Number of Outputs: 16 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: LED Lighting Current - Output / Channel: 90mA Internal Switch(s): No Topology: Shift Register Supplier Device Package: 24-SSOP Dimming: No Voltage - Supply (Min): 3.3V Voltage - Supply (Max): 5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| XPHR7904PS,L1XHQ | Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| XPHR7904PS,L1XHQ | Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TLP387(E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH DARL 6-SOPackaging: Tube Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67H401FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRIVER 4.75V-5.25V 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: Parallel, PWM Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - AC, DC: Brushed DC |
на замовлення 10565 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67S101AFTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Tape & Reel (TR) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TB67S101AFTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48WQFNPackaging: Cut Tape (CT) Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-WQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4 |
на замовлення 3875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67S285FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (8) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67S285FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: Parallel, Serial Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (8) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
TB67S539SFTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: Logic Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 33V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 33V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
TB67S539SFTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.8A Interface: Logic Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 33V Applications: General Purpose Technology: DMOS Voltage - Load: 4.5V ~ 33V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67H480FNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR CONTROL DRIVER IC,Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TB67H480FNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR CONTROL DRIVER IC,Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
на замовлення 1890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67H481FNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR CONTROL DRIVER IC,Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TB67H481FNG,EL | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR CONTROL DRIVER IC,Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1 |
на замовлення 3513 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TB67S589FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TB67S589FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1Packaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3383 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TC74AC02FTEL | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TC74HC125AFELF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 14-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TC74HC14AFELF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 6CH 1INP 14SOPFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
на замовлення 2592 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN4904FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN4904FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN4904FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN4904FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN2310,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
RN2310,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 2987 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN4905FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN4905FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
XPJ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGLPackaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
XPJ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGLPackaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
2SC4207-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
RN1313,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USMPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: USM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
RN1313,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: USM Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| HDEPY21GEA51 | Toshiba Semiconductor and Storage |
Description: LINEAR IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| HDEPY21GEB51 | Toshiba Semiconductor and Storage |
Description: LINEAR IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TDS4A212MX,ELF | Toshiba Semiconductor and Storage |
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDTFeatures: Break-Before-Make, USB 3.2 Packaging: Tape & Reel (TR) Package / Case: 16-XFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: DisplayPort, PCIe, Thunderbolt, USB On-State Resistance (Max): 15Ohm -3db Bandwidth: 26.2GHz Supplier Device Package: 16-XQFN (2.4x1.6) Voltage - Supply, Single (V+): 1.6V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TDS4A212MX,ELF | Toshiba Semiconductor and Storage |
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDTFeatures: Break-Before-Make, USB 3.2 Packaging: Cut Tape (CT) Package / Case: 16-XFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: DisplayPort, PCIe, Thunderbolt, USB On-State Resistance (Max): 15Ohm -3db Bandwidth: 26.2GHz Supplier Device Package: 16-XQFN (2.4x1.6) Voltage - Supply, Single (V+): 1.6V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 514 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TDS4B212MX,ELF | Toshiba Semiconductor and Storage |
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDTFeatures: Break-Before-Make, USB 3.2 Packaging: Tape & Reel (TR) Package / Case: 16-XFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: DisplayPort, PCIe, Thunderbolt, USB On-State Resistance (Max): 15Ohm -3db Bandwidth: 27.5GHz Supplier Device Package: 16-XQFN (2.4x1.6) Voltage - Supply, Single (V+): 1.6V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TDS4B212MX,ELF | Toshiba Semiconductor and Storage |
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDTFeatures: Break-Before-Make, USB 3.2 Packaging: Cut Tape (CT) Package / Case: 16-XFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: DisplayPort, PCIe, Thunderbolt, USB On-State Resistance (Max): 15Ohm -3db Bandwidth: 27.5GHz Supplier Device Package: 16-XQFN (2.4x1.6) Voltage - Supply, Single (V+): 1.6V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
на замовлення 3393 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
74LCX540FT | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 3.6V 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLP170D(TP,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-200VPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -55°C ~ 125°C Termination Style: Gull Wing Load Current: 200 mA Approval Agency: CSA, cUR, UR, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLP170D(TP,F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-200VPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -55°C ~ 125°C Termination Style: Gull Wing Load Current: 200 mA Approval Agency: CSA, cUR, UR, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
на замовлення 8870 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLP172GAM(E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400VPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 110 mA Approval Agency: cUR, UR, VDE Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 65 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TLP172GAM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-400VPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: Gull Wing Load Current: 110 mA Approval Agency: cUR, UR, VDE Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 65 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| AL15SEB12EQ | Toshiba Semiconductor and Storage |
Description: AL15SE 1200GBPackaging: Bulk Size / Dimension: 100.45mm x 70.10mm x 15.00mm Memory Size: 1.2TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 2.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TLP383(D4GB-TL,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR OPTOCOUPLER LOW CURREPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLP383(D4GB-TL,E | Toshiba Semiconductor and Storage |
Description: TRANSISTOR OPTOCOUPLER LOW CURREPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 7826 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| SSM3J15CT,L3F | Toshiba Semiconductor and Storage |
Description: SMALL LOW RON PCH MOSFETS VDSS:-Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
| TC7WH14FK,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
на замовлення 6567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.25 грн |
| 39+ | 8.37 грн |
| 44+ | 7.37 грн |
| 100+ | 5.89 грн |
| 250+ | 5.39 грн |
| 500+ | 5.09 грн |
| 1000+ | 4.77 грн |
| MG08SDA800E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MG08 8TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 8TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 23271.58 грн |
| MG08SDA600E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 20821.38 грн |
| TK125N60Z1,S1F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 6OOV DTMOS6 TO-247 125MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
Description: 6OOV DTMOS6 TO-247 125MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 300 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 366.83 грн |
| TLP3545A(LF1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.5A 0-40V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Description: SSR RELAY SPST-NO 3.5A 0-40V
Packaging: Bulk
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
товару немає в наявності
В кошику
од. на суму грн.
| TC7WH08FU,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 34325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.25 грн |
| 39+ | 8.37 грн |
| 44+ | 7.37 грн |
| 100+ | 5.89 грн |
| 250+ | 5.39 грн |
| 500+ | 5.09 грн |
| 1000+ | 4.77 грн |
| 2SA1941-O(Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 140V 10A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: TRANS PNP 140V 10A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
товару немає в наявності
В кошику
од. на суму грн.
| TJ60S06M3L(T6L1,NQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| TJ60S06M3L(T6L1,NQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Description: MOSFET P-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
на замовлення 2113 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.53 грн |
| 10+ | 114.03 грн |
| 100+ | 86.86 грн |
| 500+ | 71.97 грн |
| TJ30S06M3L(T6L1,NQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SSM6K818R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.21 грн |
| SSM6K818R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
Description: N-CH MOSFET 30V, +/-20V, 15A ,0.
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
Qualification: AEC-Q101
на замовлення 5583 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.63 грн |
| 10+ | 50.39 грн |
| 100+ | 33.00 грн |
| 500+ | 23.96 грн |
| 1000+ | 21.70 грн |
| TC62D748AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: CONSTANT CURRENT PANEL LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5V
Description: CONSTANT CURRENT PANEL LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.83 грн |
| 10+ | 77.98 грн |
| 25+ | 65.32 грн |
| 100+ | 47.86 грн |
| 250+ | 41.26 грн |
| 500+ | 37.20 грн |
| 1000+ | 33.24 грн |
| XPHR7904PS,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| XPHR7904PS,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
Description: 40V UMOS9-H SOP ADVANCE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 3W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TLP387(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.45 грн |
| 10+ | 40.51 грн |
| 125+ | 28.91 грн |
| TB67H401FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
Description: IC MTR DRIVER 4.75V-5.25V 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - AC, DC: Brushed DC
на замовлення 10565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.52 грн |
| 10+ | 226.70 грн |
| 25+ | 208.69 грн |
| 100+ | 177.17 грн |
| 250+ | 168.27 грн |
| 500+ | 162.91 грн |
| 1000+ | 155.90 грн |
| TB67S101AFTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
товару немає в наявності
В кошику
од. на суму грн.
| TB67S101AFTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
на замовлення 3875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.81 грн |
| 10+ | 153.66 грн |
| 25+ | 140.69 грн |
| 100+ | 118.71 грн |
| 250+ | 112.34 грн |
| 500+ | 108.50 грн |
| 1000+ | 103.62 грн |
| TB67S285FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 159.98 грн |
| TB67S285FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel, Serial
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 436.38 грн |
| 10+ | 275.58 грн |
| 25+ | 237.81 грн |
| 100+ | 182.97 грн |
| 250+ | 163.17 грн |
| 500+ | 150.98 грн |
| 1000+ | 142.20 грн |
| TB67S539SFTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
В кошику
од. на суму грн.
| TB67S539SFTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.8A
Interface: Logic
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 33V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 4.5V ~ 33V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.24 грн |
| 10+ | 84.28 грн |
| 25+ | 76.64 грн |
| 100+ | 63.98 грн |
| 250+ | 60.20 грн |
| 500+ | 57.92 грн |
| 1000+ | 55.12 грн |
| TB67H480FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
товару немає в наявності
В кошику
од. на суму грн.
| TB67H480FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
на замовлення 1890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.00 грн |
| 10+ | 92.02 грн |
| 25+ | 83.76 грн |
| 100+ | 70.03 грн |
| 250+ | 65.95 грн |
| 500+ | 63.49 грн |
| 1000+ | 60.45 грн |
| TB67H481FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
товару немає в наявності
В кошику
од. на суму грн.
| TB67H481FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
Description: BRUSHED MOTOR CONTROL DRIVER IC,
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1
на замовлення 3513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.93 грн |
| 10+ | 81.73 грн |
| 25+ | 74.25 грн |
| 100+ | 61.95 грн |
| 250+ | 58.28 грн |
| 500+ | 56.05 грн |
| 1000+ | 53.34 грн |
| TB67S589FNG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
В кошику
од. на суму грн.
| TB67S589FNG(O,EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3383 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.58 грн |
| 10+ | 121.60 грн |
| 25+ | 111.03 грн |
| 100+ | 93.31 грн |
| 250+ | 88.12 грн |
| 500+ | 84.99 грн |
| 1000+ | 81.06 грн |
| TC74AC02FTEL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
товару немає в наявності
В кошику
од. на суму грн.
| TC74HC125AFELF |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-SOP
Description: IC BUFFER NON-INVERT 6V 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 14-SOP
товару немає в наявності
В кошику
од. на суму грн.
| TC74HC14AFELF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
на замовлення 2592 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.75 грн |
| 12+ | 26.63 грн |
| 25+ | 23.86 грн |
| 100+ | 19.49 грн |
| 250+ | 18.12 грн |
| 500+ | 17.28 грн |
| 1000+ | 16.54 грн |
| RN4904FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 5.89 грн |
| 8000+ | 5.14 грн |
| RN4904FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.98 грн |
| RN4904FE,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 3.09 грн |
| RN4904FE,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.56 грн |
| 33+ | 9.73 грн |
| 100+ | 6.02 грн |
| 500+ | 4.14 грн |
| 1000+ | 3.65 грн |
| 2000+ | 3.23 грн |
| RN2310,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RN2310,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.84 грн |
| 22+ | 14.83 грн |
| 100+ | 9.28 грн |
| 500+ | 6.45 грн |
| 1000+ | 5.72 грн |
| RN4905FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 6.41 грн |
| 8000+ | 5.60 грн |
| RN4905FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.47 грн |
| XPJ1R004PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 73.81 грн |
| XPJ1R004PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; MOSFET 1MOHM; L-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 147.99 грн |
| 25+ | 125.76 грн |
| 100+ | 94.43 грн |
| 250+ | 82.84 грн |
| 500+ | 75.71 грн |
| 2SC4207-BL(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
товару немає в наявності
В кошику
од. на суму грн.
| RN1313,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: USM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: USM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.30 грн |
| RN1313,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: USM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: USM
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.59 грн |
| 47+ | 6.86 грн |
| 100+ | 4.25 грн |
| 500+ | 2.89 грн |
| 1000+ | 2.53 грн |
| TDS4A212MX,ELF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 26.2GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 26.2GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| TDS4A212MX,ELF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 26.2GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 26.2GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 514 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.54 грн |
| 10+ | 69.21 грн |
| 25+ | 62.77 грн |
| 100+ | 52.21 грн |
| 250+ | 49.02 грн |
| 500+ | 47.10 грн |
| TDS4B212MX,ELF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 27.5GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 27.5GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| TDS4B212MX,ELF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 27.5GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: PCIE SWITCH 2:1 MUX/DE-MUX SPDT
Features: Break-Before-Make, USB 3.2
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: DisplayPort, PCIe, Thunderbolt, USB
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 27.5GHz
Supplier Device Package: 16-XQFN (2.4x1.6)
Voltage - Supply, Single (V+): 1.6V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
на замовлення 3393 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.54 грн |
| 10+ | 69.21 грн |
| 25+ | 62.77 грн |
| 100+ | 52.21 грн |
| 250+ | 49.02 грн |
| 500+ | 47.10 грн |
| 1000+ | 44.77 грн |
| 2500+ | 43.13 грн |
| 74LCX540FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.45 грн |
| 10+ | 35.72 грн |
| 25+ | 29.85 грн |
| 100+ | 21.72 грн |
| 250+ | 18.63 грн |
| 500+ | 16.73 грн |
| 1000+ | 14.90 грн |
| TLP170D(TP,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -55°C ~ 125°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: CSA, cUR, UR, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -55°C ~ 125°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: CSA, cUR, UR, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 69.59 грн |
| 5000+ | 64.71 грн |
| 7500+ | 63.40 грн |
| TLP170D(TP,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -55°C ~ 125°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: CSA, cUR, UR, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -55°C ~ 125°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: CSA, cUR, UR, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
на замовлення 8870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.68 грн |
| 10+ | 88.51 грн |
| 25+ | 84.49 грн |
| 50+ | 76.57 грн |
| 100+ | 73.96 грн |
| 250+ | 70.63 грн |
| 500+ | 67.09 грн |
| 1000+ | 64.79 грн |
| TLP172GAM(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 110 mA
Approval Agency: cUR, UR, VDE
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 65 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 110 mA
Approval Agency: cUR, UR, VDE
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 65 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| TLP172GAM(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 110 mA
Approval Agency: cUR, UR, VDE
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 65 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 110 mA
Approval Agency: cUR, UR, VDE
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 65 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| AL15SEB12EQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AL15SE 1200GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 1.2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
Description: AL15SE 1200GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 1.2TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
товару немає в наявності
В кошику
од. на суму грн.
| TLP383(D4GB-TL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER LOW CURRE
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR OPTOCOUPLER LOW CURRE
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.66 грн |
| 6000+ | 13.31 грн |
| TLP383(D4GB-TL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR OPTOCOUPLER LOW CURRE
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: TRANSISTOR OPTOCOUPLER LOW CURRE
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 7826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.14 грн |
| 10+ | 32.77 грн |
| 100+ | 21.51 грн |
| 500+ | 16.06 грн |
| 1000+ | 14.80 грн |
| SSM3J15CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: SMALL LOW RON PCH MOSFETS VDSS:-
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.05 грн |
| 20000+ | 2.67 грн |
























