Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13489) > Сторінка 215 з 225
| Фото | Назва | Виробник | Інформація |
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TLP3052A(D4,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
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TLP3052AF(D4,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIPPackaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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7UL3G14FK,LF(B | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC SOT-765(US8) VCC:0.Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: US8 Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL3G14FK,LF(B | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC SOT-765(US8) VCC:0.Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: US8 Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
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| TCR1HF18B,LM(CT | Toshiba Semiconductor and Storage |
Description: 40V 150MA LDO LOW IQ 1UA SOT-25 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1.6 µA Voltage - Input (Max): 36V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable PSRR: 60dB (1kHz) Voltage Dropout (Max): 1.06V @ 150mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TCR1HF18B,LM(CT | Toshiba Semiconductor and Storage |
Description: 40V 150MA LDO LOW IQ 1UA SOT-25 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 1.6 µA Voltage - Input (Max): 36V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.8V Control Features: Current Limit, Enable PSRR: 60dB (1kHz) Voltage Dropout (Max): 1.06V @ 150mA Protection Features: Over Current, Over Temperature |
на замовлення 2945 шт: термін постачання 21-31 дні (днів) |
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TLP7830(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: IC OP AMP ISOLATION SO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: Modulator Data Interface: Serial Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V Resolution (Bits): 16 b Voltage Supply Source: Dual Supply Supplier Device Package: 8-SO Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLP3107(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3.3A 0-60VPackaging: Tube Package / Case: 6-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 3.3 A Supplier Device Package: 6-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 60 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK065Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: POWER MOSFET TRANSISTOR TO-247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.69mA Supplier Device Package: TO-247-4L(T) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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TC7SET00F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC7SET00F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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| TB67H481FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TB67H481FTG(O,EL) | Toshiba Semiconductor and Storage |
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S569FTG(O,R,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 34V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 10V ~ 40V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB67S569FTG(O,R,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 34V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 10V ~ 40V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3485 шт: термін постачання 21-31 дні (днів) |
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TB67S589FTG(O,R,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB67S589FTG(O,R,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3A Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 50V Supplier Device Package: 32-VQFN (5x5) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3432 шт: термін постачання 21-31 дні (днів) |
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TLP3083F(TP4,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing, 5 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 800 V Current - DC Forward (If) (Max): 50 mA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLP3083F(TP4,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing, 5 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 800 V Current - DC Forward (If) (Max): 50 mA |
на замовлення 5951 шт: термін постачання 21-31 дні (днів) |
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CRG07(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 700MA S-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 700mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CRG07(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 700MA S-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 700mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 4340 шт: термін постачання 21-31 дні (днів) |
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DCL541B01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) HIGH SPEED DIGITAL ISPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DCL541B01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) HIGH SPEED DIGITAL ISPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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DCL541A01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) HIGH SPEED DIGITAL ISPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DCL541A01(T,E | Toshiba Semiconductor and Storage |
Description: 4-CH (3:1) HIGH SPEED DIGITAL ISPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Type: General Purpose Operating Temperature: -40°C ~ 110°C Voltage - Supply: 2.25V ~ 5.5V Data Rate: 150Mbps Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Inputs - Side 1/Side 2: 3/1 Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 0.9ns, 0.9ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns Isolated Power: Yes Channel Type: Unidirectional Pulse Width Distortion (Max): 2.8ns Number of Channels: 4 |
на замовлення 1448 шт: термін постачання 21-31 дні (днів) |
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TLP3083F(LF4,F | Toshiba Semiconductor and Storage |
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;Packaging: Tube Package / Case: 6-SMD, Gull Wing, 5 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 800 V Current - DC Forward (If) (Max): 50 mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 1A M-FLATPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 1A M-FLATPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1507 шт: термін постачання 21-31 дні (днів) |
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TCD1103GFG(8Z,AA2) | Toshiba Semiconductor and Storage |
Description: IMAGE SENSOR CCD 16SMDPackaging: Tray Package / Case: 16-GLCC Module Type: CCD Operating Temperature: -25°C ~ 60°C Voltage - Supply: 3V ~ 4V Pixel Size: 5.5µm x 64µm Supplier Device Package: 16-GLCC (15.2x6) |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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CRS10I30C(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A SFLATPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 82pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CRS10I30C(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 82pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 4242 шт: термін постачання 21-31 дні (днів) |
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TCKE903NL,RF | Toshiba Semiconductor and Storage |
Description: EFUSE IC , 4A/23V FAST PROTECTIOFeatures: Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCKE903NL,RF | Toshiba Semiconductor and Storage |
Description: EFUSE IC , 4A/23V FAST PROTECTIOFeatures: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
на замовлення 2326 шт: термін постачання 21-31 дні (днів) |
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TCKE905ANA,RF | Toshiba Semiconductor and Storage |
Description: EFUSE IC 4A/23V FAST PROTECTIONFeatures: Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCKE905ANA,RF | Toshiba Semiconductor and Storage |
Description: EFUSE IC 4A/23V FAST PROTECTIONFeatures: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 34mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 23V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WSON (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
на замовлення 2446 шт: термін постачання 21-31 дні (днів) |
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7UL3G17FK,LF | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC SOT-765(US8) VCC:0.Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: US8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL3G17FK,LF | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC SOT-765(US8) VCC:0.Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: US8 |
на замовлення 5935 шт: термін постачання 21-31 дні (днів) |
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TC74VHC541FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC BUFF NON-INVERT 5.5V 20-VSSOPPackaging: Tape & Reel (TR) Package / Case: 20-VFSOP (0.118", 3.00mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-VSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC74VHC541FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC BUFF NON-INVERT 5.5V 20-VSSOPPackaging: Cut Tape (CT) Package / Case: 20-VFSOP (0.118", 3.00mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-VSSOP |
на замовлення 2131 шт: термін постачання 21-31 дні (днів) |
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TCR3DF40,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4V 300MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 4V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.22V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR3DF40,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 4V 300MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 4V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.22V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 3258 шт: термін постачання 21-31 дні (днів) |
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TCR3DG18,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 300MA 4WCSPEPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.365V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR3DG18,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 300MA 4WCSPEPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.365V @ 300mA Protection Features: Inrush Current, Over Current, Over Temperature |
на замовлення 4793 шт: термін постачання 21-31 дні (днів) |
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TK60S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK60S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V |
на замовлення 1755 шт: термін постачання 21-31 дні (днів) |
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| TCR3DM25,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.29V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TCR3DM25,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.29V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 3874 шт: термін постачання 21-31 дні (днів) |
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TPN2R805PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 80A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 2.67W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TPN2R805PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 80A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 2.67W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 300µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V |
на замовлення 4661 шт: термін постачання 21-31 дні (днів) |
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TPW3R70APL,L1Q | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DSOPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPW3R70APL,L1Q | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DSOPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
на замовлення 8092 шт: термін постачання 21-31 дні (днів) |
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TJ15S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 15A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TJ15S06M3L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 15A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6014 шт: термін постачання 21-31 дні (днів) |
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| DF6S25P3NU,LF(B | Toshiba Semiconductor and Storage |
Description: LF ESD PROTECTION DIODES 21V, SO Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 650pF @ 1MHz Current - Peak Pulse (10/1000µs): 110A (8/20µs) Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: 6-UDFNB (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.5V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 5060W (5.06kW) Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| DF6S25P3NU,LF(B | Toshiba Semiconductor and Storage |
Description: LF ESD PROTECTION DIODES 21V, SO Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 650pF @ 1MHz Current - Peak Pulse (10/1000µs): 110A (8/20µs) Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: 6-UDFNB (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.5V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 5060W (5.06kW) Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HN1B01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 120MHz, 150MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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HN1B01FU-GR,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 120MHz, 150MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5948 шт: термін постачання 21-31 дні (днів) |
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HN1B01FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 120MHz, 150MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HN1B01FU-Y,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 120MHz, 150MHz Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5778 шт: термін постачання 21-31 дні (днів) |
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RN1911,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: US6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| TLP3052A(D4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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| TLP3052AF(D4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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| 7UL3G14FK,LF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.93 грн |
| 7UL3G14FK,LF(B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: US8
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.71 грн |
| 15+ | 21.75 грн |
| 25+ | 19.89 грн |
| 100+ | 13.89 грн |
| 250+ | 12.59 грн |
| 500+ | 10.42 грн |
| 1000+ | 7.69 грн |
| TCR1HF18B,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
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| TCR1HF18B,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
Description: 40V 150MA LDO LOW IQ 1UA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 µA
Voltage - Input (Max): 36V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 1.06V @ 150mA
Protection Features: Over Current, Over Temperature
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.95 грн |
| 12+ | 29.11 грн |
| 25+ | 26.62 грн |
| 100+ | 18.60 грн |
| 250+ | 16.86 грн |
| 500+ | 13.95 грн |
| 1000+ | 10.29 грн |
| TLP7830(D4-TP4,E |
Виробник: Toshiba Semiconductor and Storage
Description: IC OP AMP ISOLATION SO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
Description: IC OP AMP ISOLATION SO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: Modulator
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V, 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SO
Number of Channels: 1
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| TLP3107(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3.3A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.3 A
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
Description: SSR RELAY SPST-NO 3.3A 0-60V
Packaging: Tube
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 3.3 A
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 60 mOhms
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| TK065Z65Z,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
Description: POWER MOSFET TRANSISTOR TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Supplier Device Package: TO-247-4L(T)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 570.21 грн |
| 25+ | 438.85 грн |
| TC7SET00F,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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| TC7SET00F,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 15+ | 22.56 грн |
| 25+ | 19.73 грн |
| 100+ | 11.99 грн |
| 250+ | 9.92 грн |
| 500+ | 7.94 грн |
| 1000+ | 5.99 грн |
| TB67H481FTG(O,EL) |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 74.23 грн |
| TB67H481FTG(O,EL) |
Виробник: Toshiba Semiconductor and Storage
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Description: BRUSHED MOTOR DRIVERS, 2-CH, 50V
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.50 грн |
| 10+ | 149.28 грн |
| 25+ | 128.35 грн |
| 100+ | 98.27 грн |
| 250+ | 87.48 грн |
| 500+ | 80.89 грн |
| 1000+ | 74.18 грн |
| TB67S569FTG(O,R,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
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| TB67S569FTG(O,R,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 40V, 2A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 34V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 40V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.76 грн |
| 10+ | 116.93 грн |
| 25+ | 106.75 грн |
| 100+ | 89.63 грн |
| 250+ | 84.60 грн |
| 500+ | 81.57 грн |
| 1000+ | 77.77 грн |
| TB67S589FTG(O,R,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
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| TB67S589FTG(O,R,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPER MOTOR DRIVER, 50V, 3A, 1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 50V
Supplier Device Package: 32-VQFN (5x5)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.51 грн |
| 10+ | 125.83 грн |
| 25+ | 114.96 грн |
| 100+ | 96.63 грн |
| 250+ | 91.27 грн |
| 500+ | 88.04 грн |
| 1000+ | 83.98 грн |
| TLP3083F(TP4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 60.06 грн |
| 2000+ | 55.10 грн |
| 3000+ | 53.69 грн |
| 5000+ | 48.90 грн |
| TLP3083F(TP4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 5951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.04 грн |
| 10+ | 93.40 грн |
| 100+ | 70.99 грн |
| 500+ | 57.31 грн |
| CRG07(TE85L,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.59 грн |
| CRG07(TE85L,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 700MA S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4340 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.39 грн |
| 16+ | 20.38 грн |
| 100+ | 10.29 грн |
| 500+ | 8.56 грн |
| 1000+ | 6.66 грн |
| DCL541B01(T,E |
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Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| DCL541B01(T,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 488.75 грн |
| 10+ | 332.53 грн |
| 100+ | 272.35 грн |
| 500+ | 215.47 грн |
| DCL541A01(T,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| DCL541A01(T,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
Description: 4-CH (3:1) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 488.75 грн |
| 10+ | 332.53 грн |
| 100+ | 272.35 грн |
| 500+ | 215.47 грн |
| TLP3083F(LF4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tube
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tube
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.20 грн |
| 50+ | 75.89 грн |
| CMH04(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| CMH04(TE12L,Q,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1507 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.67 грн |
| 13+ | 26.04 грн |
| 100+ | 16.60 грн |
| 500+ | 11.76 грн |
| 1000+ | 10.52 грн |
| TCD1103GFG(8Z,AA2) |
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Виробник: Toshiba Semiconductor and Storage
Description: IMAGE SENSOR CCD 16SMD
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
Description: IMAGE SENSOR CCD 16SMD
Packaging: Tray
Package / Case: 16-GLCC Module
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 3V ~ 4V
Pixel Size: 5.5µm x 64µm
Supplier Device Package: 16-GLCC (15.2x6)
на замовлення 90 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1111.03 грн |
| 5+ | 973.65 грн |
| 10+ | 937.66 грн |
| 25+ | 839.72 грн |
| 50+ | 812.17 грн |
| CRS10I30C(TE85L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.33 грн |
| CRS10I30C(TE85L,QM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 4242 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.83 грн |
| 13+ | 25.31 грн |
| 100+ | 16.12 грн |
| 500+ | 11.42 грн |
| 1000+ | 10.22 грн |
| TCKE903NL,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
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| TCKE903NL,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC , 4A/23V FAST PROTECTIO
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2326 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.42 грн |
| 10+ | 53.37 грн |
| 25+ | 48.20 грн |
| 100+ | 39.90 грн |
| 250+ | 37.35 грн |
| 500+ | 35.81 грн |
| 1000+ | 33.97 грн |
| TCKE905ANA,RF |
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Виробник: Toshiba Semiconductor and Storage
Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
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В кошику
од. на суму грн.
| TCKE905ANA,RF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Description: EFUSE IC 4A/23V FAST PROTECTION
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 34mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 23V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WSON (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
на замовлення 2446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.42 грн |
| 10+ | 53.37 грн |
| 25+ | 48.20 грн |
| 100+ | 39.90 грн |
| 250+ | 37.35 грн |
| 500+ | 35.81 грн |
| 1000+ | 33.97 грн |
| 7UL3G17FK,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.48 грн |
| 7UL3G17FK,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
Description: L-MOS LVP IC SOT-765(US8) VCC:0.
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: US8
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.99 грн |
| 14+ | 24.02 грн |
| 25+ | 19.70 грн |
| 100+ | 13.92 грн |
| 250+ | 11.67 грн |
| 500+ | 10.28 грн |
| 1000+ | 8.98 грн |
| TC74VHC541FK(EL,K) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
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| TC74VHC541FK(EL,K) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
Description: IC BUFF NON-INVERT 5.5V 20-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-VSSOP
на замовлення 2131 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 12+ | 27.82 грн |
| 25+ | 24.87 грн |
| 100+ | 20.32 грн |
| 250+ | 18.88 грн |
| 500+ | 18.02 грн |
| 1000+ | 17.26 грн |
| TCR3DF40,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 4V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.75 грн |
| TCR3DF40,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 4V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 3258 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.60 грн |
| 41+ | 8.01 грн |
| 47+ | 6.99 грн |
| 100+ | 5.58 грн |
| 250+ | 5.11 грн |
| 500+ | 4.82 грн |
| 1000+ | 4.51 грн |
| TCR3DG18,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
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од. на суму грн.
| TCR3DG18,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.365V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.99 грн |
| 20+ | 16.42 грн |
| 25+ | 15.04 грн |
| 100+ | 10.51 грн |
| 250+ | 9.52 грн |
| 500+ | 7.88 грн |
| 1000+ | 5.81 грн |
| 2500+ | 5.69 грн |
| TK60S06K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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од. на суму грн.
| TK60S06K3L(T6L1,NQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
на замовлення 1755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 127.65 грн |
| 10+ | 102.54 грн |
| 100+ | 81.60 грн |
| 500+ | 64.80 грн |
| 1000+ | 54.98 грн |
| TCR3DM25,LF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
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од. на суму грн.
| TCR3DM25,LF(SE |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3874 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.11 грн |
| 13+ | 26.20 грн |
| 25+ | 23.65 грн |
| 100+ | 15.33 грн |
| 250+ | 12.91 грн |
| 500+ | 10.49 грн |
| 1000+ | 7.93 грн |
| 2500+ | 7.14 грн |
| TPN2R805PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
товару немає в наявності
В кошику
од. на суму грн.
| TPN2R805PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
Description: MOSFET N-CH 45V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V
Power Dissipation (Max): 2.67W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 22.5 V
на замовлення 4661 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.45 грн |
| 10+ | 62.59 грн |
| 100+ | 41.43 грн |
| 500+ | 30.37 грн |
| 1000+ | 27.62 грн |
| 2000+ | 25.31 грн |
| TPW3R70APL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 84.77 грн |
| TPW3R70APL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
на замовлення 8092 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 260.33 грн |
| 10+ | 163.76 грн |
| 100+ | 114.37 грн |
| 500+ | 93.77 грн |
| TJ15S06M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 31.45 грн |
| 4000+ | 28.00 грн |
| TJ15S06M3L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6014 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.21 грн |
| 10+ | 69.63 грн |
| 100+ | 46.24 грн |
| 500+ | 33.99 грн |
| 1000+ | 30.96 грн |
| DF6S25P3NU,LF(B |
Виробник: Toshiba Semiconductor and Storage
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.35 грн |
| 6000+ | 15.56 грн |
| DF6S25P3NU,LF(B |
Виробник: Toshiba Semiconductor and Storage
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.51 грн |
| 10+ | 38.01 грн |
| 25+ | 35.71 грн |
| 100+ | 27.36 грн |
| 250+ | 25.41 грн |
| 500+ | 21.63 грн |
| 1000+ | 17.02 грн |
| HN1B01FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.51 грн |
| HN1B01FU-GR,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5948 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 25+ | 13.10 грн |
| 100+ | 6.65 грн |
| 500+ | 5.09 грн |
| 1000+ | 3.78 грн |
| HN1B01FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| HN1B01FU-Y,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q PNP + NPN TR VCEO:-50
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz, 150MHz
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 25+ | 13.10 грн |
| 100+ | 6.65 грн |
| 500+ | 5.09 грн |
| 1000+ | 3.78 грн |
| RN1911,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Description: AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.81 грн |



















