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AL14SXB60EE Toshiba Semiconductor and Storage ehdd-al14sxb-product-overview.pdf Description: AL14SX 600GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 600GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
товару немає в наявності
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TK46A08N1,S4X TK46A08N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13149&prodName=TK46A08N1 Description: MOSFET N-CH 80V 46A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
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2SJ438(AISIN,A,Q) 2SJ438(AISIN,A,Q) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438(AISIN,Q,M) 2SJ438(AISIN,Q,M) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438(CANO,Q,M) 2SJ438(CANO,Q,M) Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,MDKQ(J 2SJ438,MDKQ(J Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,MDKQ(M 2SJ438,MDKQ(M Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,Q(J 2SJ438,Q(J Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,Q(M 2SJ438,Q(M Toshiba Semiconductor and Storage 2SJ438_2009-09-29.pdf Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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7UL1T34FS,LF(B 7UL1T34FS,LF(B Toshiba Semiconductor and Storage datasheet_en_20220203.pdf?did=141151 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
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7UL1T34FS,LF(B 7UL1T34FS,LF(B Toshiba Semiconductor and Storage datasheet_en_20220203.pdf?did=141151 Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
на замовлення 8955 шт:
термін постачання 21-31 дні (днів)
10+36.43 грн
16+20.81 грн
25+17.03 грн
100+11.97 грн
250+10.00 грн
500+8.78 грн
1000+7.64 грн
2500+6.55 грн
5000+5.89 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MN09ACA18T Toshiba Semiconductor and Storage cHDD-MN09-Product-Overview_r1a.pdf Description: MN09 NAS 18TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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TBD62304AFNG,EL TBD62304AFNG,EL Toshiba Semiconductor and Storage TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG Description: IC PWR DRIVER N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
2+181.34 грн
10+112.43 грн
100+76.78 грн
500+57.73 грн
1000+53.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TC7MPB9307FT(EL) TC7MPB9307FT(EL) Toshiba Semiconductor and Storage Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+13.17 грн
6000+11.86 грн
10000+11.04 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TC7MPB9307FT(EL) TC7MPB9307FT(EL) Toshiba Semiconductor and Storage Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
9+37.26 грн
11+30.70 грн
25+28.64 грн
100+21.50 грн
250+19.96 грн
500+16.89 грн
1000+12.84 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TC7SPB9307TU,LF(CT TC7SPB9307TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
товару немає в наявності
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TC7SPB9307TU,LF(CT TC7SPB9307TU,LF(CT Toshiba Semiconductor and Storage TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
на замовлення 2919 шт:
термін постачання 21-31 дні (днів)
11+32.29 грн
13+24.80 грн
25+22.71 грн
100+15.86 грн
250+14.37 грн
500+11.89 грн
1000+8.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
TLP3145(TP,F TLP3145(TP,F Toshiba Semiconductor and Storage datasheet_en_20230620.pdf?did=59691 Description: SSR RELAY SPST-NO 400MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: CSA, cUL, UL
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 2 Ohms
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)
2+291.47 грн
10+189.94 грн
100+143.46 грн
500+117.40 грн
1000+112.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MKZ10V,LM(B MKZ10V,LM(B Toshiba Semiconductor and Storage Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.56 грн
6000+2.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MKZ10V,LM(B MKZ10V,LM(B Toshiba Semiconductor and Storage Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
23+14.90 грн
26+12.68 грн
27+12.09 грн
100+6.49 грн
250+4.81 грн
500+3.99 грн
1000+2.68 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TPH2R805PL,LQ TPH2R805PL,LQ Toshiba Semiconductor and Storage TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
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TPH2R805PL,LQ TPH2R805PL,LQ Toshiba Semiconductor and Storage TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
3+157.33 грн
10+96.32 грн
100+65.15 грн
500+48.59 грн
1000+44.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
74LCX541FT(AE) 74LCX541FT(AE) Toshiba Semiconductor and Storage docget.jsp?did=15179&prodName=74LCX541FT Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+13.66 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74LCX541FT(AE) 74LCX541FT(AE) Toshiba Semiconductor and Storage docget.jsp?did=15179&prodName=74LCX541FT Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 3867 шт:
термін постачання 21-31 дні (днів)
6+62.10 грн
10+35.72 грн
25+29.54 грн
100+21.09 грн
250+17.83 грн
500+15.83 грн
1000+13.92 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MG08SDP600A Toshiba Semiconductor and Storage eHDD-MG08-D_Product-Manual_r0.pdf Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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TPD4165K,F TPD4165K,F Toshiba Semiconductor and Storage TPD4165K_datasheet_en_20240115.pdf?did=156295&prodName=TPD4165K Description: 600V, IPD, 3A, HDIP30
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+515.88 грн
15+369.99 грн
30+350.26 грн
105+303.17 грн
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TC74VHC08F(EL,K,F) TC74VHC08F(EL,K,F) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FK(EL,K) TC74VHC08FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FK(EL,K) TC74VHC08FK(EL,K) Toshiba Semiconductor and Storage Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FTELM TC74VHC08FTELM Toshiba Semiconductor and Storage TC74VHC08F,FN,FT,FK.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FTELM TC74VHC08FTELM Toshiba Semiconductor and Storage TC74VHC08F,FN,FT,FK.pdf Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TPH8R808QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
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TPH8R808QM,LQ Toshiba Semiconductor and Storage Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
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TK5P60W5,RVQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+39.93 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TK5P60W5,RVQ Toshiba Semiconductor and Storage Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
4+96.88 грн
10+76.07 грн
100+59.15 грн
500+47.06 грн
1000+38.33 грн
Мінімальне замовлення: 4
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TK16G60W5,RVQ TK16G60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14277&prodName=TK16G60W5 Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+137.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TK16G60W5,RVQ TK16G60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14277&prodName=TK16G60W5 Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1288 шт:
термін постачання 21-31 дні (днів)
2+316.32 грн
10+201.10 грн
100+141.79 грн
500+128.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK14V65W,LQ TK14V65W,LQ Toshiba Semiconductor and Storage TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
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TK14V65W,LQ TK14V65W,LQ Toshiba Semiconductor and Storage TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
1+400.78 грн
10+256.92 грн
100+183.53 грн
500+142.89 грн
1000+138.94 грн
В кошику  од. на суму  грн.
TK25V60X5,LQ TK25V60X5,LQ Toshiba Semiconductor and Storage docget.jsp?did=15560&prodName=TK25V60X5 Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
товару немає в наявності
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TK25V60X5,LQ TK25V60X5,LQ Toshiba Semiconductor and Storage docget.jsp?did=15560&prodName=TK25V60X5 Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 2483 шт:
термін постачання 21-31 дні (днів)
1+510.08 грн
10+331.31 грн
100+240.82 грн
500+193.87 грн
В кошику  од. на суму  грн.
DCL540C01(T,E DCL540C01(T,E Toshiba Semiconductor and Storage DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+218.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540C01(T,E DCL540C01(T,E Toshiba Semiconductor and Storage DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)
1+488.55 грн
10+332.51 грн
100+272.36 грн
500+215.48 грн
В кошику  од. на суму  грн.
DCL540L01(T,E DCL540L01(T,E Toshiba Semiconductor and Storage DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+200.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540L01(T,E DCL540L01(T,E Toshiba Semiconductor and Storage DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+438.87 грн
10+296.07 грн
100+230.90 грн
500+192.53 грн
В кошику  од. на суму  грн.
DCL540H01(T,E DCL540H01(T,E Toshiba Semiconductor and Storage DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+218.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540H01(T,E DCL540H01(T,E Toshiba Semiconductor and Storage DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+488.55 грн
10+332.51 грн
100+272.36 грн
500+215.48 грн
В кошику  од. на суму  грн.
DCL540D01(T,E DCL540D01(T,E Toshiba Semiconductor and Storage DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+218.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540D01(T,E DCL540D01(T,E Toshiba Semiconductor and Storage DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01 Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+488.55 грн
10+332.51 грн
100+272.36 грн
500+215.48 грн
В кошику  од. на суму  грн.
TC62D776CFNAG,CEBH Toshiba Semiconductor and Storage TC62D776CFNAG_10-01-14.pdf Description: IC LED DRIVER
Packaging: Bulk
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
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TPH3R003PL,LQ TPH3R003PL,LQ Toshiba Semiconductor and Storage TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
товару немає в наявності
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TPH3R003PL,LQ TPH3R003PL,LQ Toshiba Semiconductor and Storage TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
4+105.16 грн
10+63.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
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TJ60S04M3L(T6L1,NQ TJ60S04M3L(T6L1,NQ Toshiba Semiconductor and Storage TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L Description: MOSFET P-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
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CMZ13(TE12L,Q,M) CMZ13(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
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CMZ13(TE12L,Q,M) CMZ13(TE12L,Q,M) Toshiba Semiconductor and Storage CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12 Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
9+39.75 грн
10+32.53 грн
100+22.64 грн
500+16.59 грн
1000+13.48 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MG04SCA40EA Toshiba Semiconductor and Storage eHDD-MG04SCAxxEx-product-overview.pdf Description: HDD 4TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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MG04SCA60EA Toshiba Semiconductor and Storage eHDD-MG04SCAxxEx-product-overview.pdf Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
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TOTX1350A(F) Toshiba Semiconductor and Storage TOTX1350F.pdf Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
товару немає в наявності
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TOTX1350A(V,F) Toshiba Semiconductor and Storage TOTX1350F.pdf Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
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AL14SXB60EE ehdd-al14sxb-product-overview.pdf
Виробник: Toshiba Semiconductor and Storage
Description: AL14SX 600GB
Packaging: Bulk
Size / Dimension: 100.45mm x 70.10mm x 15.00mm
Memory Size: 600GB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 2.5"
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TK46A08N1,S4X docget.jsp?did=13149&prodName=TK46A08N1
TK46A08N1,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 46A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
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2SJ438(AISIN,A,Q) 2SJ438_2009-09-29.pdf
2SJ438(AISIN,A,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438(AISIN,Q,M) 2SJ438_2009-09-29.pdf
2SJ438(AISIN,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438(CANO,Q,M) 2SJ438_2009-09-29.pdf
2SJ438(CANO,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,MDKQ(J 2SJ438_2009-09-29.pdf
2SJ438,MDKQ(J
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,MDKQ(M 2SJ438_2009-09-29.pdf
2SJ438,MDKQ(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
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2SJ438,Q(J 2SJ438_2009-09-29.pdf
2SJ438,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товару немає в наявності
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2SJ438,Q(M 2SJ438_2009-09-29.pdf
2SJ438,Q(M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-220NIS
товару немає в наявності
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7UL1T34FS,LF(B datasheet_en_20220203.pdf?did=141151
7UL1T34FS,LF(B
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
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7UL1T34FS,LF(B datasheet_en_20220203.pdf?did=141151
7UL1T34FS,LF(B
Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
на замовлення 8955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.43 грн
16+20.81 грн
25+17.03 грн
100+11.97 грн
250+10.00 грн
500+8.78 грн
1000+7.64 грн
2500+6.55 грн
5000+5.89 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MN09ACA18T cHDD-MN09-Product-Overview_r1a.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MN09 NAS 18TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
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TBD62304AFNG,EL TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG
TBD62304AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+181.34 грн
10+112.43 грн
100+76.78 грн
500+57.73 грн
1000+53.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TC7MPB9307FT(EL)
TC7MPB9307FT(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+13.17 грн
6000+11.86 грн
10000+11.04 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TC7MPB9307FT(EL)
TC7MPB9307FT(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 20-TSSOP
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.26 грн
11+30.70 грн
25+28.64 грн
100+21.50 грн
250+19.96 грн
500+16.89 грн
1000+12.84 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TC7SPB9307TU,LF(CT TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU
TC7SPB9307TU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
товару немає в наявності
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TC7SPB9307TU,LF(CT TC7SPB9307TU_datasheet_en_20220907.pdf?did=21130&prodName=TC7SPB9307TU
TC7SPB9307TU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: UF6
на замовлення 2919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+32.29 грн
13+24.80 грн
25+22.71 грн
100+15.86 грн
250+14.37 грн
500+11.89 грн
1000+8.77 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
TLP3145(TP,F datasheet_en_20230620.pdf?did=59691
TLP3145(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: CSA, cUL, UL
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 2 Ohms
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+291.47 грн
10+189.94 грн
100+143.46 грн
500+117.40 грн
1000+112.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MKZ10V,LM(B
MKZ10V,LM(B
Виробник: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.56 грн
6000+2.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MKZ10V,LM(B
MKZ10V,LM(B
Виробник: Toshiba Semiconductor and Storage
Description: 10V ZENER DIODE, SOT23 PD (MAX):
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.90 грн
26+12.68 грн
27+12.09 грн
100+6.49 грн
250+4.81 грн
500+3.99 грн
1000+2.68 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
TPH2R805PL,LQ TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL
TPH2R805PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
товару немає в наявності
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TPH2R805PL,LQ TPH2R805PL_datasheet_en_20161226.pdf?did=56261&prodName=TPH2R805PL
TPH2R805PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.33 грн
10+96.32 грн
100+65.15 грн
500+48.59 грн
1000+44.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
74LCX541FT(AE) docget.jsp?did=15179&prodName=74LCX541FT
74LCX541FT(AE)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+13.66 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74LCX541FT(AE) docget.jsp?did=15179&prodName=74LCX541FT
74LCX541FT(AE)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOPB
на замовлення 3867 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.10 грн
10+35.72 грн
25+29.54 грн
100+21.09 грн
250+17.83 грн
500+15.83 грн
1000+13.92 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MG08SDP600A eHDD-MG08-D_Product-Manual_r0.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MG08 6TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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TPD4165K,F TPD4165K_datasheet_en_20240115.pdf?did=156295&prodName=TPD4165K
TPD4165K,F
Виробник: Toshiba Semiconductor and Storage
Description: 600V, IPD, 3A, HDIP30
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+515.88 грн
15+369.99 грн
30+350.26 грн
105+303.17 грн
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TC74VHC08F(EL,K,F)
TC74VHC08F(EL,K,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FK(EL,K)
TC74VHC08FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FK(EL,K)
TC74VHC08FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FTELM TC74VHC08F,FN,FT,FK.pdf
TC74VHC08FTELM
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TC74VHC08FTELM TC74VHC08F,FN,FT,FK.pdf
TC74VHC08FTELM
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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TPH8R808QM,LQ
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
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TPH8R808QM,LQ
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 8.8MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 40 V
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 26A, 10V
Power Dissipation (Max): 3W (Ta), 109W (Tc)
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TK5P60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+39.93 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
TK5P60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.88 грн
10+76.07 грн
100+59.15 грн
500+47.06 грн
1000+38.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TK16G60W5,RVQ docget.jsp?did=14277&prodName=TK16G60W5
TK16G60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+137.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TK16G60W5,RVQ docget.jsp?did=14277&prodName=TK16G60W5
TK16G60W5,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+316.32 грн
10+201.10 грн
100+141.79 грн
500+128.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK14V65W,LQ TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W
TK14V65W,LQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
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TK14V65W,LQ TK14V65W_datasheet_en_20151223.pdf?did=30287&prodName=TK14V65W
TK14V65W,LQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+400.78 грн
10+256.92 грн
100+183.53 грн
500+142.89 грн
1000+138.94 грн
В кошику  од. на суму  грн.
TK25V60X5,LQ docget.jsp?did=15560&prodName=TK25V60X5
TK25V60X5,LQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
товару немає в наявності
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TK25V60X5,LQ docget.jsp?did=15560&prodName=TK25V60X5
TK25V60X5,LQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DTM
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 2483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+510.08 грн
10+331.31 грн
100+240.82 грн
500+193.87 грн
В кошику  од. на суму  грн.
DCL540C01(T,E DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01
DCL540C01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+218.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540C01(T,E DCL540C01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540C01
DCL540C01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+488.55 грн
10+332.51 грн
100+272.36 грн
500+215.48 грн
В кошику  од. на суму  грн.
DCL540L01(T,E DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01
DCL540L01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+200.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540L01(T,E DCL540L01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540L01
DCL540L01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+438.87 грн
10+296.07 грн
100+230.90 грн
500+192.53 грн
В кошику  од. на суму  грн.
DCL540H01(T,E DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01
DCL540H01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+218.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540H01(T,E DCL540H01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540H01
DCL540H01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+488.55 грн
10+332.51 грн
100+272.36 грн
500+215.48 грн
В кошику  од. на суму  грн.
DCL540D01(T,E DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01
DCL540D01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+218.71 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
DCL540D01(T,E DCL540D01_datasheet_en_20230427.pdf?did=140763&prodName=DCL540D01
DCL540D01(T,E
Виробник: Toshiba Semiconductor and Storage
Description: 4-CH (4:0) HIGH SPEED DIGITAL IS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: General Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2.25V ~ 5.5V
Data Rate: 150Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Inputs - Side 1/Side 2: 4/0
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 0.9ns, 0.9ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 18.3ns, 18.3ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 2.8ns
Number of Channels: 4
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+488.55 грн
10+332.51 грн
100+272.36 грн
500+215.48 грн
В кошику  од. на суму  грн.
TC62D776CFNAG,CEBH TC62D776CFNAG_10-01-14.pdf
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER
Packaging: Bulk
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C
Applications: LED Lighting
Current - Output / Channel: 90mA
Internal Switch(s): No
Topology: Shift Register
Supplier Device Package: 24-SSOP
Dimming: No
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
товару немає в наявності
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TPH3R003PL,LQ TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL
TPH3R003PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
товару немає в наявності
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TPH3R003PL,LQ TPH3R003PL_datasheet_en_20161019.pdf?did=55430&prodName=TPH3R003PL
TPH3R003PL,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 88A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 4.5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3825 pF @ 15 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.16 грн
10+63.71 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TJ60S04M3L(T6L1,NQ TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
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TJ60S04M3L(T6L1,NQ TJ60S04M3L_datasheet_en_20200624.pdf?did=11301&prodName=TJ60S04M3L
TJ60S04M3L(T6L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
товару немає в наявності
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CMZ13(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ13(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
товару немає в наявності
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CMZ13(TE12L,Q,M) CMZ12_datasheet_en_20150515.pdf?did=21287&prodName=CMZ12
CMZ13(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 13V 2W MFLAT
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.75 грн
10+32.53 грн
100+22.64 грн
500+16.59 грн
1000+13.48 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MG04SCA40EA eHDD-MG04SCAxxEx-product-overview.pdf
Виробник: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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MG04SCA60EA eHDD-MG04SCAxxEx-product-overview.pdf
Виробник: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.60mm x 26.10mm
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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TOTX1350A(F) TOTX1350F.pdf
Виробник: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
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TOTX1350A(V,F) TOTX1350F.pdf
Виробник: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
товару немає в наявності
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