Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13432) > Сторінка 26 з 224
Фото | Назва | Виробник | Інформація |
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SSM6L35FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM6L36FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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SSM6N35FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N37CTD(TPL3) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N44FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 |
на замовлення 92000 шт: термін постачання 21-31 дні (днів) |
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SSM6P15FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SSM6P35FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6P41FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM3J114TU(T5L,T) | Toshiba Semiconductor and Storage |
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на замовлення 5158 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SSM3J120TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3J129TU(TE85L) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3J130TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
на замовлення 104998 шт: термін постачання 21-31 дні (днів) |
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SSM3J321T(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3J46CTB(TPL3) | Toshiba Semiconductor and Storage |
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на замовлення 25072 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SSM3K123TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
на замовлення 12928 шт: термін постачання 21-31 дні (днів) |
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SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3K316T(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSM Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3K318T(T5L,F,T) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM4K27CT(TPL3) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage |
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на замовлення 2666 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SSM5H12TU(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6J51TUTE85LF | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6K211FE,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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SSM6L35FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 27310 шт: термін постачання 21-31 дні (днів) |
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SSM6L36FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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SSM6N35FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N37CTD(TPL3) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N44FE,LM | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 |
на замовлення 97585 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002BFE(T5L,F | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6N7002BFU(T5L,F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: US6 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6P15FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 13290 шт: термін постачання 21-31 дні (днів) |
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SSM6P35FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6P41FE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 11392 шт: термін постачання 21-31 дні (днів) |
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SSM3J129TU(TE85L) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3K318T(T5L,F,T) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6J51TUTE85LF | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RN1403T5LFT | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA78L09F(TE12L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 9V Part Status: Obsolete PSRR: 44dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA78L10F(TE12L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 10V Part Status: Obsolete PSRR: 43dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA78L12F(TE12L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 12V Part Status: Obsolete PSRR: 41dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA78L15F(TE12L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 15V Part Status: Obsolete PSRR: 40dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA78L24F(TE12L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -30°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PW-MINI (SOT-89) Voltage - Output (Min/Fixed): 24V Part Status: Obsolete PSRR: 35dB (120Hz) Protection Features: Over Current, Over Temperature Current - Supply (Max): 6.5 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48015BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48025BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48033BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48S05AF(T6L1,Q) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA4800AF(T6L1,Q) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA4805BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA4808BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA4809BF(T6L1,NQ) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48L025F(TE12L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48L02F(TE12L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TA48M025F(T6L1,SNQ | Toshiba Semiconductor and Storage |
![]() |
товару немає в наявності |
В кошику од. на суму грн. |
SSM6L35FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 5.12 грн |
8000+ | 4.72 грн |
12000+ | 4.08 грн |
SSM6L36FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 4.62 грн |
SSM6N35FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6N37CTD(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
Description: MOSFET 2N-CH 20V 0.25A CST6D
товару немає в наявності
В кошику
од. на суму грн.
SSM6N42FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6N44FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
на замовлення 92000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 4.23 грн |
8000+ | 3.81 грн |
12000+ | 3.72 грн |
20000+ | 3.47 грн |
28000+ | 3.39 грн |
40000+ | 3.38 грн |
SSM6P15FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 6.69 грн |
8000+ | 5.37 грн |
12000+ | 5.25 грн |
SSM6P35FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6P41FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 7.69 грн |
8000+ | 7.31 грн |
SSM3J114TU(T5L,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
Description: MOSFET P-CH 20V 1.8A UFM
на замовлення 5158 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SSM3J120TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
Description: MOSFET P-CH 20V 4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
SSM3J129TU(TE85L) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Description: MOSFET P-CH 20V 4.6A UFM
товару немає в наявності
В кошику
од. на суму грн.
SSM3J130TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 104998 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.20 грн |
13+ | 24.45 грн |
100+ | 16.60 грн |
500+ | 12.19 грн |
1000+ | 11.07 грн |
SSM3J321T(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
SSM3J46CTB(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A CST3B
Description: MOSFET P-CH 20V 2A CST3B
на замовлення 25072 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SSM3K123TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 12928 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.18 грн |
12+ | 25.60 грн |
100+ | 16.47 грн |
500+ | 12.06 грн |
1000+ | 10.30 грн |
SSM3K315T(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Description: MOSFET N-CH 30V 6A TSM
товару немає в наявності
В кошику
од. на суму грн.
SSM3K316T(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: MOSFET N-CH 30V 4A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
SSM3K318T(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
товару немає в наявності
В кошику
од. на суму грн.
SSM4K27CT(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V .5A CST4
Description: MOSFET N-CH 20V .5A CST4
товару немає в наявності
В кошику
од. на суму грн.
SSM5G10TU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
Description: MOSFET P-CH 20V 1.5A UFV
на замовлення 2666 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SSM5H12TU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Description: MOSFET N-CH 30V 1.9A UFV
товару немає в наявності
В кошику
од. на суму грн.
SSM6J409TU(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
SSM6J51TUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Description: MOSFET P-CH 12V 4A UF6
товару немає в наявності
В кошику
од. на суму грн.
SSM6J53FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Description: MOSFET P-CH 20V 1.8A ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6K211FE,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.38 грн |
13+ | 25.52 грн |
100+ | 17.07 грн |
500+ | 13.09 грн |
1000+ | 10.70 грн |
2000+ | 10.60 грн |
SSM6L35FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 27310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 28.65 грн |
16+ | 19.24 грн |
100+ | 9.69 грн |
500+ | 7.42 грн |
1000+ | 5.50 грн |
2000+ | 4.63 грн |
SSM6L36FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.26 грн |
20+ | 15.33 грн |
100+ | 9.63 грн |
500+ | 6.72 грн |
1000+ | 5.96 грн |
2000+ | 5.33 грн |
SSM6N35FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6N37CTD(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
Description: MOSFET 2N-CH 20V 0.25A CST6D
товару немає в наявності
В кошику
од. на суму грн.
SSM6N42FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6N44FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
на замовлення 97585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.47 грн |
21+ | 15.02 грн |
100+ | 9.43 грн |
500+ | 6.57 грн |
1000+ | 5.83 грн |
2000+ | 5.21 грн |
SSM6N7002BFE(T5L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Description: MOSFET 2N-CH 60V 0.2A ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6N7002BFU(T5L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
SSM6P15FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 13290 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.47 грн |
22+ | 14.48 грн |
100+ | 9.36 грн |
500+ | 7.27 грн |
1000+ | 6.62 грн |
SSM6P35FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику
од. на суму грн.
SSM6P41FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 11392 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.18 грн |
13+ | 24.83 грн |
100+ | 15.82 грн |
500+ | 11.21 грн |
1000+ | 10.03 грн |
2000+ | 9.04 грн |
SSM3J129TU(TE85L) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Description: MOSFET P-CH 20V 4.6A UFM
товару немає в наявності
В кошику
од. на суму грн.
SSM3K315T(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Description: MOSFET N-CH 30V 6A TSM
товару немає в наявності
В кошику
од. на суму грн.
SSM3K318T(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
товару немає в наявності
В кошику
од. на суму грн.
SSM5G10TU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
Description: MOSFET P-CH 20V 1.5A UFV
товару немає в наявності
В кошику
од. на суму грн.
SSM6J51TUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Description: MOSFET P-CH 12V 4A UF6
товару немає в наявності
В кошику
од. на суму грн.
SSM6J53FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Description: MOSFET P-CH 20V 1.8A ES6
товару немає в наявності
В кошику
од. на суму грн.
RN1403T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 200MW SMINI
Description: TRANS PREBIAS NPN 200MW SMINI
товару немає в наявності
В кошику
од. на суму грн.
TA78L09F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 44dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 9V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 44dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товару немає в наявності
В кошику
од. на суму грн.
TA78L10F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 10V
Part Status: Obsolete
PSRR: 43dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 10V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 10V
Part Status: Obsolete
PSRR: 43dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товару немає в наявності
В кошику
од. на суму грн.
TA78L12F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 12V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 12V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 41dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товару немає в наявності
В кошику
од. на суму грн.
TA78L15F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 15V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 40dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 15V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 40dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товару немає в наявності
В кошику
од. на суму грн.
TA78L24F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 24V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 35dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
Description: IC REG LINEAR 24V 150MA PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 35dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
товару немає в наявності
В кошику
од. на суму грн.
TA48015BF(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 1A PW-MOLD
Description: IC REG LINEAR 1.5V 1A PW-MOLD
товару немає в наявності
В кошику
од. на суму грн.
TA48025BF(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1A PW-MOLD
Description: IC REG LINEAR 2.5V 1A PW-MOLD
товару немає в наявності
В кошику
од. на суму грн.
TA48033BF(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 1A PWMOLD
Description: IC REG LINEAR 3.3V 1A PWMOLD
товару немає в наявності
В кошику
од. на суму грн.
TA48S05AF(T6L1,Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 1A 5HSIP
Description: IC REG LINEAR 5V 1A 5HSIP
товару немає в наявності
В кошику
од. на суму грн.
TA4800AF(T6L1,Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR POS ADJ 1A 5HSIP
Description: IC REG LINEAR POS ADJ 1A 5HSIP
товару немає в наявності
В кошику
од. на суму грн.
TA4805BF(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 1A PW-MOLD
Description: IC REG LINEAR 5V 1A PW-MOLD
товару немає в наявності
В кошику
од. на суму грн.
TA4808BF(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 1A PW-MOLD
Description: IC REG LINEAR 8V 1A PW-MOLD
товару немає в наявності
В кошику
од. на суму грн.
TA4809BF(T6L1,NQ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 1A PW-MOLD
Description: IC REG LINEAR 9V 1A PW-MOLD
товару немає в наявності
В кошику
од. на суму грн.
TA48L025F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 150MA PW-MINI
Description: IC REG LINEAR 2.5V 150MA PW-MINI
товару немає в наявності
В кошику
од. на суму грн.
TA48L02F(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 150MA PW-MINI
Description: IC REG LINEAR 2V 150MA PW-MINI
товару немає в наявності
В кошику
од. на суму грн.
TA48M025F(T6L1,SNQ |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 500MA PW-MOLD
Description: IC REG LINEAR 2.5V 500MA PW-MOLD
товару немає в наявності
В кошику
од. на суму грн.