Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (12996) > Сторінка 26 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 6A TSM |
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SSM3K316T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 4A TSM |
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SSM3K318T(T5L,F,T) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 2.5A TSM |
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SSM3K7002BSU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 200MA USM |
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SSM4K27CTTPL3 | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V .5A CST4 |
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SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.5A UFV |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSM5H12TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 1.9A UFV |
товар відсутній |
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SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 9.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V |
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SSM6J51TUTE85LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 12V 4A UF6 |
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SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.8A ES6 |
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SSM6K211FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3.2A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM6L35FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM6L36FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.5A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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SSM6N35FE,LM | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.18A ES6 |
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SSM6N37CTD(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.25A CST6D |
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SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.8A ES6 |
товар відсутній |
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SSM6N44FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 |
на замовлення 88000 шт: термін постачання 21-31 дні (днів) |
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SSM6P15FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: ES6 Part Status: Active |
товар відсутній |
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SSM6P35FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.1A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
товар відсутній |
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SSM6P41FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.72A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SSM3J114TU(T5L,T) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.8A UFM |
на замовлення 5158 шт: термін постачання 21-31 дні (днів) |
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SSM3J120TU,LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 4A UFM |
на замовлення 4849 шт: термін постачання 21-31 дні (днів) |
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SSM3J129TU(TE85L) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 4.6A UFM |
товар відсутній |
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SSM3J130TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4.4A UFM Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
на замовлення 123927 шт: термін постачання 21-31 дні (днів) |
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SSM3J307T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 5A TSM |
товар відсутній |
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SSM3J321T(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.2A TSM Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V |
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SSM3J46CTB(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 2A CST3B |
на замовлення 25072 шт: термін постачання 21-31 дні (днів) |
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SSM3K123TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 4.2A UFM Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V |
на замовлення 397 шт: термін постачання 21-31 дні (днів) |
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SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 6A TSM |
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SSM3K316T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 4A TSM |
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SSM3K318T(T5L,F,T) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 2.5A TSM |
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SSM3K7002BSU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 200MA USM |
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SSM4K27CT(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V .5A CST4 |
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SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.5A UFV |
на замовлення 2666 шт: термін постачання 21-31 дні (днів) |
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SSM5H12TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 1.9A UFV |
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SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 9.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V |
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SSM6J51TUTE85LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 12V 4A UF6 |
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SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.8A ES6 |
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SSM6K211FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3.2A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
на замовлення 11977 шт: термін постачання 21-31 дні (днів) |
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SSM6L35FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 27310 шт: термін постачання 21-31 дні (днів) |
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SSM6L36FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.5A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 101076 шт: термін постачання 21-31 дні (днів) |
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SSM6N35FE,LM | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.18A ES6 |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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SSM6N37CTD(TPL3) | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.25A CST6D |
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SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.8A ES6 |
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SSM6N44FE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 |
на замовлення 92917 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002BFE(T5L,F | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 60V 0.2A ES6 |
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SSM6N7002BFU(T5L,F | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.1V @ 250µA Supplier Device Package: US6 Part Status: Obsolete |
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SSM6P15FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 30V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 1156 шт: термін постачання 21-31 дні (днів) |
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SSM6P35FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
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SSM6P41FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET 2P-CH 20V 0.72A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 720mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 |
на замовлення 17614 шт: термін постачання 21-31 дні (днів) |
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SSM3J120TU,LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 4A UFM |
на замовлення 4849 шт: термін постачання 21-31 дні (днів) |
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SSM3J129TU(TE85L) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 4.6A UFM |
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SSM3K315T(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 6A TSM |
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SSM3K318T(T5L,F,T) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 60V 2.5A TSM |
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SSM4K27CTTPL3 | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V .5A CST4 |
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SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.5A UFV |
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SSM6J51TUTE85LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 12V 4A UF6 |
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SSM6J53FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 1.8A ES6 |
товар відсутній |
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SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: MOSFET 2N-CH 20V 0.8A ES6 |
товар відсутній |
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RN1403T5LFT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 200MW SMINI |
товар відсутній |
SSM3K315T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Description: MOSFET N-CH 30V 6A TSM
товар відсутній
SSM3K316T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A TSM
Description: MOSFET N-CH 30V 4A TSM
товар відсутній
SSM3K318T(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
товар відсутній
SSM3K7002BSU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA USM
Description: MOSFET N-CH 60V 200MA USM
товар відсутній
SSM4K27CTTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V .5A CST4
Description: MOSFET N-CH 20V .5A CST4
товар відсутній
SSM5G10TU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
Description: MOSFET P-CH 20V 1.5A UFV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)SSM5H12TU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Description: MOSFET N-CH 30V 1.9A UFV
товар відсутній
SSM6J409TU(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
товар відсутній
SSM6J51TUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Description: MOSFET P-CH 12V 4A UF6
товар відсутній
SSM6J53FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Description: MOSFET P-CH 20V 1.8A ES6
товар відсутній
SSM6K211FE,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 9.15 грн |
8000+ | 8.45 грн |
SSM6L35FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.59 грн |
8000+ | 4.23 грн |
12000+ | 3.66 грн |
SSM6L36FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 5.15 грн |
8000+ | 4.74 грн |
12000+ | 4.1 грн |
28000+ | 3.78 грн |
SSM6N35FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Description: MOSFET 2N-CH 20V 0.18A ES6
товар відсутній
SSM6N37CTD(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
Description: MOSFET 2N-CH 20V 0.25A CST6D
товар відсутній
SSM6N42FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Description: MOSFET 2N-CH 20V 0.8A ES6
товар відсутній
SSM6N44FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 4.89 грн |
8000+ | 4.5 грн |
12000+ | 3.9 грн |
28000+ | 3.59 грн |
SSM6P15FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
товар відсутній
SSM6P35FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товар відсутній
SSM6P41FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 8.11 грн |
8000+ | 7.49 грн |
SSM3J114TU(T5L,T) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
Description: MOSFET P-CH 20V 1.8A UFM
на замовлення 5158 шт:
термін постачання 21-31 дні (днів)SSM3J120TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Description: MOSFET P-CH 20V 4A UFM
на замовлення 4849 шт:
термін постачання 21-31 дні (днів)SSM3J129TU(TE85L) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Description: MOSFET P-CH 20V 4.6A UFM
товар відсутній
SSM3J130TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 123927 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.25 грн |
12+ | 23.98 грн |
100+ | 16.66 грн |
500+ | 12.21 грн |
1000+ | 9.92 грн |
SSM3J307T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A TSM
Description: MOSFET P-CH 20V 5A TSM
товар відсутній
SSM3J321T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
товар відсутній
SSM3J46CTB(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A CST3B
Description: MOSFET P-CH 20V 2A CST3B
на замовлення 25072 шт:
термін постачання 21-31 дні (днів)SSM3K123TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 397 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.96 грн |
11+ | 27.14 грн |
100+ | 18.47 грн |
SSM3K315T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Description: MOSFET N-CH 30V 6A TSM
товар відсутній
SSM3K316T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A TSM
Description: MOSFET N-CH 30V 4A TSM
товар відсутній
SSM3K318T(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
товар відсутній
SSM3K7002BSU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA USM
Description: MOSFET N-CH 60V 200MA USM
товар відсутній
SSM4K27CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V .5A CST4
Description: MOSFET N-CH 20V .5A CST4
товар відсутній
SSM5G10TU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
Description: MOSFET P-CH 20V 1.5A UFV
на замовлення 2666 шт:
термін постачання 21-31 дні (днів)SSM5H12TU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Description: MOSFET N-CH 30V 1.9A UFV
товар відсутній
SSM6J409TU(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
товар відсутній
SSM6J51TUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Description: MOSFET P-CH 12V 4A UF6
товар відсутній
SSM6J53FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Description: MOSFET P-CH 20V 1.8A ES6
товар відсутній
SSM6K211FE,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 11977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.54 грн |
11+ | 25.35 грн |
100+ | 15.21 грн |
500+ | 13.21 грн |
1000+ | 8.98 грн |
2000+ | 8.27 грн |
SSM6L35FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 27310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.69 грн |
16+ | 17.25 грн |
100+ | 8.68 грн |
500+ | 6.65 грн |
1000+ | 4.93 грн |
2000+ | 4.15 грн |
SSM6L36FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 101076 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.54 грн |
15+ | 19.31 грн |
100+ | 9.74 грн |
500+ | 7.46 грн |
1000+ | 5.53 грн |
2000+ | 4.65 грн |
SSM6N35FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Description: MOSFET 2N-CH 20V 0.18A ES6
на замовлення 9 шт:
термін постачання 21-31 дні (днів)SSM6N37CTD(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
Description: MOSFET 2N-CH 20V 0.25A CST6D
товар відсутній
SSM6N42FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Description: MOSFET 2N-CH 20V 0.8A ES6
товар відсутній
SSM6N44FE,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
на замовлення 92917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.11 грн |
15+ | 18.35 грн |
100+ | 9.25 грн |
500+ | 7.08 грн |
1000+ | 5.26 грн |
2000+ | 4.42 грн |
SSM6N7002BFE(T5L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Description: MOSFET 2N-CH 60V 0.2A ES6
товар відсутній
SSM6N7002BFU(T5L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 0.2A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: US6
Part Status: Obsolete
товар відсутній
SSM6P15FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 1156 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.97 грн |
14+ | 20.48 грн |
100+ | 10.31 грн |
500+ | 8.57 грн |
1000+ | 6.67 грн |
SSM6P35FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товар відсутній
SSM6P41FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 17614 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.68 грн |
13+ | 22.47 грн |
100+ | 13.48 грн |
500+ | 11.71 грн |
1000+ | 7.96 грн |
2000+ | 7.33 грн |
SSM3J120TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Description: MOSFET P-CH 20V 4A UFM
на замовлення 4849 шт:
термін постачання 21-31 дні (днів)SSM3J129TU(TE85L) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
Description: MOSFET P-CH 20V 4.6A UFM
товар відсутній
SSM3K315T(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
Description: MOSFET N-CH 30V 6A TSM
товар відсутній
SSM3K318T(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Description: MOSFET N-CH 60V 2.5A TSM
товар відсутній
SSM4K27CTTPL3 |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V .5A CST4
Description: MOSFET N-CH 20V .5A CST4
товар відсутній
SSM5G10TU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
Description: MOSFET P-CH 20V 1.5A UFV
товар відсутній
SSM6J51TUTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
Description: MOSFET P-CH 12V 4A UF6
товар відсутній
SSM6J53FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
Description: MOSFET P-CH 20V 1.8A ES6
товар відсутній
SSM6N42FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Description: MOSFET 2N-CH 20V 0.8A ES6
товар відсутній
RN1403T5LFT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 200MW SMINI
Description: TRANS PREBIAS NPN 200MW SMINI
товар відсутній