Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13260) > Сторінка 28 з 221
| Фото | Назва | Виробник | Інформація |
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| TB62217AFG(O) | Toshiba Semiconductor and Storage |
 Description: IC MOTOR DRIVER SER 64HQFP |
товар відсутній |
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TK100F04K3(TE24L,Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 100A TO-220SM |
товар відсутній |
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TK13A65U(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 6.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
товар відсутній |
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TK3A60DA(Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 2.5A TO-220SIS |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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TK4A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 4A TO220SIS |
товар відсутній |
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TK50P03M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 50A DP Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
товар відсутній |
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TK50P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 50A DP Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
товар відсутній |
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TK5A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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TK6A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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TK8A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 8A TO220SIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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TLP166J(V4,C,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 2.5KV TRIAC 6MFSOP |
товар відсутній |
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TLP2095(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PSH PULL 6MFSOP-5 |
товар відсутній |
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TLP2098(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV PSH PULL 6MFSOP-5 |
товар відсутній |
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TLP2105(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 20V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 5Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 30ns, 30ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Number of Channels: 2 Current - Output / Channel: 25 mA |
товар відсутній |
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TLP2108(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO |
товар відсутній |
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TLP2116(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 15ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 2 Current - Output / Channel: 10 mA |
товар відсутній |
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TLP2166A(F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 3.63V Voltage - Forward (Vf) (Typ): 1.65V Data Rate: 15MBd Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 15mA Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 5ns, 5ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Number of Channels: 2 Current - Output / Channel: 10 mA |
товар відсутній |
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TLP227G(F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 120MA 0-350V Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.15VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 120 mA Supplier Device Package: 4-DIP Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 35 Ohms |
товар відсутній |
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TLP285(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товар відсутній |
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TLP358(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER 6A 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Push-Pull, Totem Pole Mounting Type: Through Hole Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Supplier Device Package: 8-DIP Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 6 A |
товар відсутній |
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.jpg "TLP512(F)") |
TLP512(F) | Toshiba Semiconductor and Storage | Description: OPTOISOLATOR 2.5KV TRANS 6-DIP |
товар відсутній |
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TLP591B(C,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 2.5KV PHVOLT 6-DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Output Type: Photovoltaic Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Current - Output / Channel: 24µA Voltage - Isolation: 2500Vrms Supplier Device Package: 6-DIP, 5 Lead Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 3ms Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 7786 шт: термін постачання 21-31 дні (днів) |
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TPCC8001-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
товар відсутній |
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TPCC8002-H(TE12L,Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
товар відсутній |
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TPCC8002-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
товар відсутній |
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TPCC8003-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 13A 8TSON |
товар відсутній |
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TPCC8005-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 26A 8TSON |
товар відсутній |
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TPCC8006-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
товар відсутній |
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TPCC8103(TE12L,QM) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 18A 8TSON |
товар відсутній |
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TPCC8A01-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 21A 8TSON |
товар відсутній |
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TPCP8004(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 8.3A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PS-8 (2.9x2.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V |
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TPCP8103-H(TE85LFM | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 4.8A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PS-8 (2.9x2.4) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
товар відсутній |
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1SV281(TPH3,F) | Toshiba Semiconductor and Storage |
Description: DIODE VCO V/UHF 10V ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: ESC Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 2.0 |
на замовлення 2230 шт: термін постачання 21-31 дні (днів) |
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CMF04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
 Description: DIODE GEN PURP 800V 500MA M-FLATPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CMF05(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 1KV 500MA M-FLAT Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
на замовлення 25678 шт: термін постачання 21-31 дні (днів) |
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CMH05A(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 1A MFLAT |
на замовлення 8411 шт: термін постачання 21-31 дні (днів) |
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.JPG "CMH08A(TE12L,Q,M)") |
CMH08A(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 2A MFLAT |
на замовлення 3494 шт: термін постачання 21-31 дні (днів) |
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CRY75(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 7.5V 700MW SFLAT |
на замовлення 4441 шт: термін постачання 21-31 дні (днів) |
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.jpg "CRY82(TE85L,Q,M)") |
CRY82(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE ZENER 8.2V 700MW SFLAT |
товар відсутній |
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SSM3K106TU(TE85L) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.2A UFM |
товар відсутній |
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SSM3K15CT(TPL3) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 0.1A CST3 |
на замовлення 13926 шт: термін постачання 21-31 дні (днів) |
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SSM3K15FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SSM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V |
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SSM3K303T(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.9A TSM |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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SSM3K35MFV(TPL3) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 180MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V |
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SSM6J206FE(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2A ES6 |
на замовлення 7491 шт: термін постачання 21-31 дні (днів) |
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SSM6J207FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 1.4A ES6 |
на замовлення 7641 шт: термін постачання 21-31 дні (днів) |
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SSM6K202FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 2.3A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
на замовлення 15376 шт: термін постачання 21-31 дні (днів) |
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SSM6N15AFE,LM | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 0.1A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: ES6 Part Status: Active |
на замовлення 3255 шт: термін постачання 21-31 дні (днів) |
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TA48L033F(TE12L,F) | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3.3V 150MA PW-MINI |
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| TB62217AFG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER SER 64HQFP |
товар відсутній |
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TK50P03M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 50A DP Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 200µA Supplier Device Package: D-Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
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TK50P04M1(T6RSS-Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 50A DP Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 500µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
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TLP285(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
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TPCC8001-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
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TPCC8002-H(TE12L,Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
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TPCC8002-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
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TPCC8003-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 13A 8TSON |
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TPCC8005-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 26A 8TSON |
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TPCC8006-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 22A 8TSON |
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TPCC8008(TE12L,QM) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 25A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1A Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V |
товар відсутній |
| TB62217AFG(O) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER SER 64HQFP
Description: IC MOTOR DRIVER SER 64HQFP
товар відсутній
| TK100F04K3(TE24L,Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A TO-220SM
Description: MOSFET N-CH 40V 100A TO-220SM
товар відсутній
| TK13A65U(STA4,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: MOSFET N-CH 650V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
товар відсутній
| TK3A60DA(Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2.5A TO-220SIS
Description: MOSFET N-CH 600V 2.5A TO-220SIS
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| TK4A60D(STA4,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 4A TO220SIS
Description: MOSFET N-CH 600V 4A TO220SIS
товар відсутній
| TK50P03M1(T6RSS-Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 50A DP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Description: MOSFET N-CH 30V 50A DP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
товар відсутній
| TK50P04M1(T6RSS-Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 50A DP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET N-CH 40V 50A DP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
товар відсутній
| TK5A65D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 650V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.45 грн |
| 10+ | 99.55 грн |
| TK6A65D(STA4,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.45 грн |
| TK8A65D(STA4,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 8A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 650V 8A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.24 грн |
| TLP166J(V4,C,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRIAC 6MFSOP
Description: OPTOISOLATOR 2.5KV TRIAC 6MFSOP
товар відсутній
| TLP2095(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PSH PULL 6MFSOP-5
Description: OPTOISO 3.75KV PSH PULL 6MFSOP-5
товар відсутній
| TLP2098(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PSH PULL 6MFSOP-5
Description: OPTOISO 3.75KV PSH PULL 6MFSOP-5
товар відсутній
| TLP2105(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 25 mA
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 25 mA
товар відсутній
| TLP2108(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
товар відсутній
| TLP2116(F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
товар відсутній
| TLP2166A(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.63V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 5ns, 5ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.63V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 5ns, 5ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
товар відсутній
| TLP227G(F) |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-350V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 35 Ohms
Description: SSR RELAY SPST-NO 120MA 0-350V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 35 Ohms
товар відсутній
| TLP285(TP,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товар відсутній
| TLP358(F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER 6A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Description: PHOTOCOUPLER 6A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
товар відсутній
| TLP512(F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRANS 6-DIP
Description: OPTOISOLATOR 2.5KV TRANS 6-DIP
товар відсутній
| TLP591B(C,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV PHVOLT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-DIP, 5 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 2.5KV PHVOLT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-DIP, 5 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 7786 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.34 грн |
| 10+ | 114.11 грн |
| 100+ | 91.13 грн |
| TPCC8001-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8002-H(TE12L,Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8002-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8003-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8TSON
Description: MOSFET N-CH 30V 13A 8TSON
товар відсутній
| TPCC8005-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 26A 8TSON
Description: MOSFET N-CH 30V 26A 8TSON
товар відсутній
| TPCC8006-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8103(TE12L,QM) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON
Description: MOSFET P-CH 30V 18A 8TSON
товар відсутній
| TPCC8A01-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8TSON
Description: MOSFET N-CH 30V 21A 8TSON
товар відсутній
| TPCP8004(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
товар відсутній
| TPCP8103-H(TE85LFM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
товар відсутній
| 1SV281(TPH3,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE VCO V/UHF 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.0
Description: DIODE VCO V/UHF 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.0
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 18+ | 17.66 грн |
| 100+ | 11.17 грн |
| 500+ | 7.83 грн |
| 1000+ | 6.97 грн |
| 2000+ | 6.25 грн |
| CMF04(TE12L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 800V 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Description: DIODE GEN PURP 800V 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| CMF05(TE12L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 1KV 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Description: DIODE GEN PURP 1KV 500MA M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
на замовлення 25678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.76 грн |
| 10+ | 31.55 грн |
| 100+ | 21.46 грн |
| 500+ | 15.11 грн |
| 1000+ | 11.33 грн |
| CMH05A(TE12L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
Description: DIODE GEN PURP 400V 1A MFLAT
на замовлення 8411 шт:
термін постачання 21-31 дні (днів)| CMH08A(TE12L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 2A MFLAT
Description: DIODE GEN PURP 400V 2A MFLAT
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)| CRY75(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 7.5V 700MW SFLAT
Description: DIODE ZENER 7.5V 700MW SFLAT
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)| CRY82(TE85L,Q,M) |
|
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 8.2V 700MW SFLAT
Description: DIODE ZENER 8.2V 700MW SFLAT
товар відсутній
| SSM3K106TU(TE85L) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.2A UFM
Description: MOSFET N-CH 20V 1.2A UFM
товар відсутній
| SSM3K15CT(TPL3) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 0.1A CST3
Description: MOSFET N-CH 30V 0.1A CST3
на замовлення 13926 шт:
термін постачання 21-31 дні (днів)| SSM3K15FS,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
товар відсутній
| SSM3K303T(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.9A TSM
Description: MOSFET N-CH 30V 2.9A TSM
на замовлення 132 шт:
термін постачання 21-31 дні (днів)| SSM3K35MFV(TPL3) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Description: MOSFET N-CH 20V 180MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
товар відсутній
| SSM6J206FE(TE85L,F |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A ES6
Description: MOSFET P-CH 20V 2A ES6
на замовлення 7491 шт:
термін постачання 21-31 дні (днів)| SSM6J207FE,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A ES6
Description: MOSFET P-CH 30V 1.4A ES6
на замовлення 7641 шт:
термін постачання 21-31 дні (днів)| SSM6K202FE,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 15376 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.05 грн |
| 11+ | 29.74 грн |
| 100+ | 22.19 грн |
| 500+ | 16.36 грн |
| 1000+ | 12.64 грн |
| 2000+ | 11.53 грн |
| SSM6N15AFE,LM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 3255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| TA48L033F(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 150MA PW-MINI
Description: IC REG LINEAR 3.3V 150MA PW-MINI
товар відсутній
| TB62217AFG |
|
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER SER 64HQFP
Description: IC MOTOR DRIVER SER 64HQFP
товар відсутній
| TK50P03M1(T6RSS-Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Description: MOSFET N-CH 30V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: D-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
товар відсутній
| TK50P04M1(T6RSS-Q) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET N-CH 40V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
товар відсутній
| TLP285(TP,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товар відсутній
| TPCC8001-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8002-H(TE12L,Q |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8002-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8003-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8TSON
Description: MOSFET N-CH 30V 13A 8TSON
товар відсутній
| TPCC8005-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 26A 8TSON
Description: MOSFET N-CH 30V 26A 8TSON
товар відсутній
| TPCC8006-H(TE12LQM |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Description: MOSFET N-CH 30V 22A 8TSON
товар відсутній
| TPCC8008(TE12L,QM) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 25A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Description: MOSFET N-CH 30V 25A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
товар відсутній