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TK8A65D(STA4,Q,M) TK8A65D(STA4,Q,M) Toshiba Semiconductor and Storage TK8A65D_datasheet_en_20131101.pdf?did=22772&prodName=TK8A65D Description: MOSFET N-CH 650V 8A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
2+199.75 грн
Мінімальне замовлення: 2
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TLP166J(V4,C,F) TLP166J(V4,C,F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV TRIAC 1CH 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 2500Vrms
Approval Agency: UR, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-MFSOP, 4 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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TLP2095(F) TLP2095(F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: AC, DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2098(F) TLP2098(F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: AC, DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2105(F) TLP2105(F) Toshiba Semiconductor and Storage TLP2105_datasheet_en_20191119.pdf?did=12361&prodName=TLP2105 Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 25 mA
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TLP2108(F) TLP2108(F) Toshiba Semiconductor and Storage docget.jsp?did=12344&prodName=TLP2108 Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
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TLP2116(F) TLP2116(F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
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TLP2166A(F) TLP2166A(F) Toshiba Semiconductor and Storage TLP2166A_datasheet_en_20190603.pdf?did=12349&prodName=TLP2166A Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.63V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 5ns, 5ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
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TLP227G(F) TLP227G(F) Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 120MA 0-350V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 35 Ohms
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TLP285(TP,F) TLP285(TP,F) Toshiba Semiconductor and Storage Description: OPTOISOLATOR 3.75KV TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP358(F) TLP358(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER 6A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
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TLP512(F) TLP512(F) Toshiba Semiconductor and Storage Description: OPTOISOLATOR 2.5KV TRANS 6-DIP
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TLP591B(C,F) TLP591B(C,F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 1CH PHVOLT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-DIP, 5 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 7753 шт:
термін постачання 21-31 дні (днів)
2+202.93 грн
50+119.38 грн
100+111.69 грн
500+91.98 грн
1000+89.99 грн
Мінімальне замовлення: 2
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TPCC8001-H(TE12LQM TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage TPCC8001-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8002-H(TE12L,Q TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8002-H(TE12LQM TPCC8002-H(TE12LQM Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8003-H(TE12LQM TPCC8003-H(TE12LQM Toshiba Semiconductor and Storage TPCC8003-H.pdf Description: MOSFET N-CH 30V 13A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 6.5A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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TPCC8005-H(TE12LQM TPCC8005-H(TE12LQM Toshiba Semiconductor and Storage TPCC8005-H.pdf Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPCC8006-H(TE12LQM TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage TPCC8006-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
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TPCC8103(TE12L,QM) TPCC8103(TE12L,QM) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8103 Description: MOSFET P-CH 30V 18A 8TSON
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TPCC8A01-H(TE12LQM TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
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TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
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TPCP8103-H(TE85LFM TPCP8103-H(TE85LFM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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1SV281(TPH3,F) 1SV281(TPH3,F) Toshiba Semiconductor and Storage 1SV281_datasheet_en_20140301.pdf?did=2798&prodName=1SV281 Description: DIODE VCO V/UHF 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.0
на замовлення 18195 шт:
термін постачання 21-31 дні (днів)
13+26.26 грн
19+16.71 грн
100+11.96 грн
500+8.38 грн
1000+6.45 грн
2000+6.38 грн
Мінімальне замовлення: 13
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CMF04(TE12L,Q,M) CMF04(TE12L,Q,M) Toshiba Semiconductor and Storage Description: DIODE STANDARD 800V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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CMF05(TE12L,Q,M) CMF05(TE12L,Q,M) Toshiba Semiconductor and Storage CMF05_2-17-10.pdf Description: DIODE STANDARD 1000V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
на замовлення 23980 шт:
термін постачання 21-31 дні (днів)
7+47.75 грн
12+27.74 грн
100+18.27 грн
500+13.29 грн
1000+12.65 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMH05A(TE12L,Q,M) CMH05A(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=685&prodName=CMH05A Description: DIODE GEN PURP 400V 1A MFLAT
на замовлення 8411 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CMH08A(TE12L,Q,M) CMH08A(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=688&prodName=CMH08A Description: DIODE GEN PURP 400V 2A MFLAT
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CRY75(TE85L,Q,M) CRY75(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRY62 Description: DIODE ZENER 7.5V 700MW SFLAT
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CRY82(TE85L,Q,M) CRY82(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=3175&prodName=CRY82 Description: DIODE ZENER 8.2V 700MW SFLAT
товару немає в наявності
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SSM3K106TU(TE85L) SSM3K106TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU Description: MOSFET N-CH 20V 1.2A UFM
товару немає в наявності
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SSM3K15CT(TPL3) SSM3K15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT Description: MOSFET N-CH 30V 0.1A CST3
на замовлення 13926 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM3K15FS,LF SSM3K15FS,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
товару немає в наявності
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SSM3K303T(TE85L,F) SSM3K303T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K303T Description: MOSFET N-CH 30V 2.9A TSM
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
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SSM3K35MFV(TPL3) SSM3K35MFV(TPL3) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 180MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
товару немає в наявності
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SSM6J206FE(TE85L,F SSM6J206FE(TE85L,F Toshiba Semiconductor and Storage SSM6J206FE.pdf Description: MOSFET P-CH 20V 2A ES6
на замовлення 7491 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM6J207FE,LF SSM6J207FE,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 30V 1.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
на замовлення 3875 шт:
термін постачання 21-31 дні (днів)
9+38.99 грн
14+23.14 грн
100+14.79 грн
500+10.47 грн
1000+9.35 грн
2000+8.44 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SSM6K202FE,LF SSM6K202FE,LF Toshiba Semiconductor and Storage SSM6K202FE_datasheet_en_20220203.pdf?did=7258&prodName=SSM6K202FE Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 15376 шт:
термін постачання 21-31 дні (днів)
9+36.61 грн
11+30.19 грн
100+22.53 грн
500+16.61 грн
1000+12.84 грн
2000+11.70 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SSM6N15AFE,LM SSM6N15AFE,LM Toshiba Semiconductor and Storage SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 3255 шт:
термін постачання 21-31 дні (днів)
13+25.47 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
TA48L033F(TE12L,F) TA48L033F(TE12L,F) Toshiba Semiconductor and Storage Description: IC REG LINEAR 3.3V 150MA PW-MINI
товару немає в наявності
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TB62217AFG Toshiba Semiconductor and Storage TB62217AFG_DS.pdf Description: IC MOTOR DRIVER SER 64HQFP
товару немає в наявності
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TK50P03M1(T6RSS-Q) TK50P03M1(T6RSS-Q) Toshiba Semiconductor and Storage Description: MOSFET N-CH 30V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
товару немає в наявності
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TK50P04M1(T6RSS-Q) TK50P04M1(T6RSS-Q) Toshiba Semiconductor and Storage TK50P04M1_datasheet_en_20160217.pdf?did=1376&prodName=TK50P04M1 Description: MOSFET N-CH 40V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8001-H(TE12LQM TPCC8001-H(TE12LQM Toshiba Semiconductor and Storage TPCC8001-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
товару немає в наявності
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TPCC8002-H(TE12L,Q TPCC8002-H(TE12L,Q Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8002-H(TE12LQM TPCC8002-H(TE12LQM Toshiba Semiconductor and Storage TPCC8002-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8005-H(TE12LQM TPCC8005-H(TE12LQM Toshiba Semiconductor and Storage TPCC8005-H.pdf Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8006-H(TE12LQM TPCC8006-H(TE12LQM Toshiba Semiconductor and Storage TPCC8006-H.pdf Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
TPCC8008(TE12L,QM) TPCC8008(TE12L,QM) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 25A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
товару немає в наявності
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TPCC8103(TE12L,QM) TPCC8103(TE12L,QM) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPCC8103 Description: MOSFET P-CH 30V 18A 8TSON
на замовлення 2818 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TPCC8A01-H(TE12LQM TPCC8A01-H(TE12LQM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
товару немає в наявності
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TPCP8004(TE85L,F) TPCP8004(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
товару немає в наявності
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TPCP8103-H(TE85LFM TPCP8103-H(TE85LFM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
CMH05A(TE12L,Q,M) CMH05A(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=685&prodName=CMH05A Description: DIODE GEN PURP 400V 1A MFLAT
на замовлення 8411 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CMH08A(TE12L,Q,M) CMH08A(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=688&prodName=CMH08A Description: DIODE GEN PURP 400V 2A MFLAT
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CRY75(TE85L,Q,M) CRY75(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRY62 Description: DIODE ZENER 7.5V 700MW SFLAT
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM3K106TU(TE85L) SSM3K106TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU Description: MOSFET N-CH 20V 1.2A UFM
товару немає в наявності
В кошику  од. на суму  грн.
SSM3K15CT(TPL3) SSM3K15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT Description: MOSFET N-CH 30V 0.1A CST3
товару немає в наявності
В кошику  од. на суму  грн.
SSM3K303T(TE85L,F) SSM3K303T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K303T Description: MOSFET N-CH 30V 2.9A TSM
товару немає в наявності
В кошику  од. на суму  грн.
SSM6J206FE(TE85L,F SSM6J206FE(TE85L,F Toshiba Semiconductor and Storage SSM6J206FE.pdf Description: MOSFET P-CH 20V 2A ES6
на замовлення 7491 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TK8A65D(STA4,Q,M) TK8A65D_datasheet_en_20131101.pdf?did=22772&prodName=TK8A65D
TK8A65D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 8A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+199.75 грн
Мінімальне замовлення: 2
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TLP166J(V4,C,F)
TLP166J(V4,C,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRIAC 1CH 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 2500Vrms
Approval Agency: UR, VDE
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-MFSOP, 4 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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TLP2095(F)
TLP2095(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: AC, DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2098(F)
TLP2098(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: AC, DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2105(F) TLP2105_datasheet_en_20191119.pdf?did=12361&prodName=TLP2105
TLP2105(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 2
Current - Output / Channel: 25 mA
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TLP2108(F) docget.jsp?did=12344&prodName=TLP2108
TLP2108(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
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TLP2116(F)
TLP2116(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
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TLP2166A(F) TLP2166A_datasheet_en_20190603.pdf?did=12349&prodName=TLP2166A
TLP2166A(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 3.63V
Voltage - Forward (Vf) (Typ): 1.65V
Data Rate: 15MBd
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 5ns, 5ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 2
Current - Output / Channel: 10 mA
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TLP227G(F)
TLP227G(F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-350V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 120 mA
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 35 Ohms
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TLP285(TP,F)
TLP285(TP,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS 4-SOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP358(F)
TLP358(F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER 6A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
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TLP512(F)
TLP512(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRANS 6-DIP
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TLP591B(C,F)
TLP591B(C,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 1CH PHVOLT 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Current - Output / Channel: 24µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-DIP, 5 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 3ms
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 7753 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.93 грн
50+119.38 грн
100+111.69 грн
500+91.98 грн
1000+89.99 грн
Мінімальне замовлення: 2
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TPCC8001-H(TE12LQM TPCC8001-H.pdf
TPCC8001-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8002-H(TE12L,Q TPCC8002-H.pdf
TPCC8002-H(TE12L,Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8002-H(TE12LQM TPCC8002-H.pdf
TPCC8002-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
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TPCC8003-H(TE12LQM TPCC8003-H.pdf
TPCC8003-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 16.9mOhm @ 6.5A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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TPCC8005-H(TE12LQM TPCC8005-H.pdf
TPCC8005-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPCC8006-H(TE12LQM TPCC8006-H.pdf
TPCC8006-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
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TPCC8103(TE12L,QM) docget.jsp?type=datasheet&lang=en&pid=TPCC8103
TPCC8103(TE12L,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON
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TPCC8A01-H(TE12LQM Mosfets_Prod_Guide.pdf
TPCC8A01-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
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TPCP8004(TE85L,F) Mosfets_Prod_Guide.pdf
TPCP8004(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
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TPCP8103-H(TE85LFM Mosfets_Prod_Guide.pdf
TPCP8103-H(TE85LFM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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1SV281(TPH3,F) 1SV281_datasheet_en_20140301.pdf?did=2798&prodName=1SV281
1SV281(TPH3,F)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE VCO V/UHF 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.0
на замовлення 18195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.26 грн
19+16.71 грн
100+11.96 грн
500+8.38 грн
1000+6.45 грн
2000+6.38 грн
Мінімальне замовлення: 13
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CMF04(TE12L,Q,M)
CMF04(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 800V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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CMF05(TE12L,Q,M) CMF05_2-17-10.pdf
CMF05(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 1000V 500MA MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
на замовлення 23980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.75 грн
12+27.74 грн
100+18.27 грн
500+13.29 грн
1000+12.65 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMH05A(TE12L,Q,M) docget.jsp?did=685&prodName=CMH05A
CMH05A(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
на замовлення 8411 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CMH08A(TE12L,Q,M) docget.jsp?did=688&prodName=CMH08A
CMH08A(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 2A MFLAT
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)
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CRY75(TE85L,Q,M) docget.jsp?type=datasheet&lang=en&pid=CRY62
CRY75(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 7.5V 700MW SFLAT
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CRY82(TE85L,Q,M) docget.jsp?did=3175&prodName=CRY82
CRY82(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 8.2V 700MW SFLAT
товару немає в наявності
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SSM3K106TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU
SSM3K106TU(TE85L)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.2A UFM
товару немає в наявності
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SSM3K15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT
SSM3K15CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 0.1A CST3
на замовлення 13926 шт:
термін постачання 21-31 дні (днів)
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SSM3K15FS,LF Mosfets_Prod_Guide.pdf
SSM3K15FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
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SSM3K303T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K303T
SSM3K303T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.9A TSM
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
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SSM3K35MFV(TPL3) Mosfets_Prod_Guide.pdf
SSM3K35MFV(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
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SSM6J206FE(TE85L,F SSM6J206FE.pdf
SSM6J206FE(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A ES6
на замовлення 7491 шт:
термін постачання 21-31 дні (днів)
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SSM6J207FE,LF Mosfets_Prod_Guide.pdf
SSM6J207FE,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
на замовлення 3875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.99 грн
14+23.14 грн
100+14.79 грн
500+10.47 грн
1000+9.35 грн
2000+8.44 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SSM6K202FE,LF SSM6K202FE_datasheet_en_20220203.pdf?did=7258&prodName=SSM6K202FE
SSM6K202FE,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.3A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 15376 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.61 грн
11+30.19 грн
100+22.53 грн
500+16.61 грн
1000+12.84 грн
2000+11.70 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SSM6N15AFE,LM SSM6N15AFE_datasheet_en_20140301.pdf?did=5870&prodName=SSM6N15AFE
SSM6N15AFE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 3255 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.47 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
TA48L033F(TE12L,F)
TA48L033F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 150MA PW-MINI
товару немає в наявності
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TB62217AFG TB62217AFG_DS.pdf
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER SER 64HQFP
товару немає в наявності
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TK50P03M1(T6RSS-Q)
TK50P03M1(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
товару немає в наявності
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TK50P04M1(T6RSS-Q) TK50P04M1_datasheet_en_20160217.pdf?did=1376&prodName=TK50P04M1
TK50P04M1(T6RSS-Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 50A DP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
товару немає в наявності
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TPCC8001-H(TE12LQM TPCC8001-H.pdf
TPCC8001-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
товару немає в наявності
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TPCC8002-H(TE12L,Q TPCC8002-H.pdf
TPCC8002-H(TE12L,Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
товару немає в наявності
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TPCC8002-H(TE12LQM TPCC8002-H.pdf
TPCC8002-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
товару немає в наявності
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TPCC8005-H(TE12LQM TPCC8005-H.pdf
TPCC8005-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
товару немає в наявності
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TPCC8006-H(TE12LQM TPCC8006-H.pdf
TPCC8006-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 22A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
товару немає в наявності
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TPCC8008(TE12L,QM) Mosfets_Prod_Guide.pdf
TPCC8008(TE12L,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 25A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 12.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
товару немає в наявності
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TPCC8103(TE12L,QM) docget.jsp?type=datasheet&lang=en&pid=TPCC8103
TPCC8103(TE12L,QM)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 18A 8TSON
на замовлення 2818 шт:
термін постачання 21-31 дні (днів)
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TPCC8A01-H(TE12LQM Mosfets_Prod_Guide.pdf
TPCC8A01-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 21A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
товару немає в наявності
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TPCP8004(TE85L,F) Mosfets_Prod_Guide.pdf
TPCP8004(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 8.3A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V
товару немає в наявності
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TPCP8103-H(TE85LFM Mosfets_Prod_Guide.pdf
TPCP8103-H(TE85LFM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 4.8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
товару немає в наявності
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CMH05A(TE12L,Q,M) docget.jsp?did=685&prodName=CMH05A
CMH05A(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 1A MFLAT
на замовлення 8411 шт:
термін постачання 21-31 дні (днів)
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CMH08A(TE12L,Q,M) docget.jsp?did=688&prodName=CMH08A
CMH08A(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 2A MFLAT
на замовлення 3494 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
CRY75(TE85L,Q,M) docget.jsp?type=datasheet&lang=en&pid=CRY62
CRY75(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 7.5V 700MW SFLAT
на замовлення 4441 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM3K106TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3K106TU
SSM3K106TU(TE85L)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.2A UFM
товару немає в наявності
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SSM3K15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K15CT
SSM3K15CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 0.1A CST3
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SSM3K303T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K303T
SSM3K303T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.9A TSM
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SSM6J206FE(TE85L,F SSM6J206FE.pdf
SSM6J206FE(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A ES6
на замовлення 7491 шт:
термін постачання 21-31 дні (днів)
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