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TPCA8028-H(TE12LQM TPCA8028-H(TE12LQM Toshiba Semiconductor and Storage docget.jsp?did=11150&prodName=TPCA8028-H Description: MOSFET N-CH 30V 50A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
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TLEGD1060(T18) TLEGD1060(T18) Toshiba Semiconductor and Storage TLBD,TLEGD1060(T18).pdf Description: LED GREEN 2MINIPLCC SMD
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TLBD1060(T18) TLBD1060(T18) Toshiba Semiconductor and Storage TLBD,TLEGD1060(T18).pdf Description: LED BLUE 2MINIPLCC SMD
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TMP95C061BFG(Z) TMP95C061BFG(Z) Toshiba Semiconductor and Storage docget.jsp?did=11445&prodName=TMP95C061BFG Description: IC MCU 16BIT ROMLESS 100QFP
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TMPM330FDFG(C) TMPM330FDFG(C) Toshiba Semiconductor and Storage datasheet_en_20230731.pdf?did=586 Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+400.95 грн
10+320.28 грн
25+297.49 грн
200+241.15 грн
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TL12W03-D(T30) TL12W03-D(T30) Toshiba Semiconductor and Storage TL12W03-D(T30).pdf Description: LED COOL WHITE 6500K 2SMD
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TL12W03-N(T30) TL12W03-N(T30) Toshiba Semiconductor and Storage TL12W03-N(T30).pdf Description: LED COOL WHITE 5000K 2SMD
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TL12W03-D(T30) TL12W03-D(T30) Toshiba Semiconductor and Storage TL12W03-D(T30).pdf Description: LED COOL WHITE 6500K 2SMD
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TL12W03-N(T30) TL12W03-N(T30) Toshiba Semiconductor and Storage TL12W03-N(T30).pdf Description: LED COOL WHITE 5000K 2SMD
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TMPA900CMXBG(EY) Toshiba Semiconductor and Storage Description: IC MCU 32BIT 32K FLASH 289FPGA
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TLP170A(TP,F) TLP170A(TP,F) Toshiba Semiconductor and Storage TLP170A_datasheet_en_20190617.pdf?did=306&prodName=TLP170A Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
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TLP3902(TPR,U,F) TLP3902(TPR,U,F) Toshiba Semiconductor and Storage Description: OPTOISO 2.5KV 1CH PHVOLT 6-MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 600µs, 2ms
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP163J(TPR,U,C,F) Toshiba Semiconductor and Storage TLP163J_datasheet_en_20190610.pdf?did=22389&prodName=TLP163J Description: OPTOISOLATOR 2.5KV TRIAC 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-MFSOP, 4 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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TLP170G(TP,F) TLP170G(TP,F) Toshiba Semiconductor and Storage TLP170G_datasheet_en_20190617.pdf?did=321&prodName=TLP170G Description: SSR RELAY SPST-NO 100MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 100 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
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TLP116A(E TLP116A(E Toshiba Semiconductor and Storage TLP116A.pdf Description: OPTOISO 3.75KV PUSH PULL SO6-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.58V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
3+111.87 грн
10+67.78 грн
Мінімальне замовлення: 3
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TLP105(F) TLP105(F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP117(F) TLP117(F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP109(E TLP109(E Toshiba Semiconductor and Storage TLP109%28IGM%29_datasheet_en_20190920.pdf?did=2465&prodName=TLP109(IGM) Description: OPTOISO 3.75KV TRANS 6-SO 5 LEAD
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.64V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 6-SO, 5 Lead
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
3+112.69 грн
10+68.18 грн
125+46.21 грн
Мінімальне замовлення: 3
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TLP700(F) TLP700(F) Toshiba Semiconductor and Storage Description: OPTOISO 5KV 1CH GATE DVR 6SDIP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 1.5A, 1.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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TLP715(F) TLP715(F) Toshiba Semiconductor and Storage Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP718(F) TLP718(F) Toshiba Semiconductor and Storage docget.jsp?did=22613&prodName=TLP718 Description: OPTOISO 5KV PUSH PULL 6DIP GW
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TLP108(F) TLP108(F) Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
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ULN2003AFWG,O,N,E ULN2003AFWG,O,N,E Toshiba Semiconductor and Storage docget.jsp?did=7063&prodName=ULN2003APG Description: IC PWR RELAY 7NPN 1:1 16SOL
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ULN2803AFWG,C,EL ULN2803AFWG,C,EL Toshiba Semiconductor and Storage Description: TRANS 8NPN DARL 50V 0.5A 18SOL
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Transistor Type: 8 NPN Darlington
Operating Temperature: -40°C ~ 85°C (TA)
Power - Max: 480mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 18-SOP
Part Status: Obsolete
Number of Inputs: 8
Number of Circuits: 8
Logic Type: NPN
Voltage - Supply: 2.5V ~ 30V
Current - Output High, Low: 268mA, 90mA
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1SS381,L3F 1SS381,L3F Toshiba Semiconductor and Storage Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
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TD62004AFG,N,EL TD62004AFG,N,EL Toshiba Semiconductor and Storage Description: IC TRANSCEIVER 7/0 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 50V
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Part Status: Obsolete
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SSM3J114TU(T5L,T) SSM3J114TU(T5L,T) Toshiba Semiconductor and Storage docget.jsp?did=6714&prodName=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
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SSM3J120TU,LF SSM3J120TU,LF Toshiba Semiconductor and Storage SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU Description: MOSFET P-CH 20V 4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
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SSM3J129TU(TE85L) SSM3J129TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU Description: MOSFET P-CH 20V 4.6A UFM
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SSM3J130TU,LF SSM3J130TU,LF Toshiba Semiconductor and Storage SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
3000+10.93 грн
6000+9.72 грн
9000+9.31 грн
15000+8.43 грн
Мінімальне замовлення: 3000
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SSM3J307T(TE85L,F) SSM3J307T(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 10 V
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SSM3J321T(TE85L,F) SSM3J321T(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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SSM3J46CTB(TPL3) SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=1707&prodName=SSM3J46CTB Description: MOSFET P-CH 20V 2A CST3B
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
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SSM3K123TU,LF SSM3K123TU,LF Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+9.53 грн
6000+8.56 грн
9000+7.95 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM3K315T(TE85L,F) SSM3K315T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K315T Description: MOSFET N-CH 30V 6A TSM
товару немає в наявності
В кошику  од. на суму  грн.
SSM3K316T(TE85L,F) SSM3K316T(TE85L,F) Toshiba Semiconductor and Storage SSM3K316T.pdf Description: MOSFET N-CH 30V 4A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SSM3K318T(T5L,F,T) SSM3K318T(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
товару немає в наявності
В кошику  од. на суму  грн.
SSM3K7002BSU,LF SSM3K7002BSU,LF Toshiba Semiconductor and Storage SSM3K7002BSU.pdf Description: MOSFET N-CH 60V 200MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SSM4K27CTTPL3 SSM4K27CTTPL3 Toshiba Semiconductor and Storage SSM4K27CT_datasheet_en_20140301.pdf?did=5965&prodName=SSM4K27CT Description: MOSFET N-CH 20V 500MA CST4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 205mOhm @ 250mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 1mA
Supplier Device Package: CST4 (1.2x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SSM5G10TU(TE85L,F) SSM5G10TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM5G10TU Description: MOSFET P-CH 20V 1.5A UFV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM5H12TU(TE85L,F) SSM5H12TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=12336&prodName=SSM5H12TU Description: MOSFET N-CH 30V 1.9A UFV
товару немає в наявності
В кошику  од. на суму  грн.
SSM6J409TU(TE85L,F SSM6J409TU(TE85L,F Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
товару немає в наявності
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SSM6J51TUTE85LF SSM6J51TUTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J51TU Description: MOSFET P-CH 12V 4A UF6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6J53FE(TE85L,F) SSM6J53FE(TE85L,F) Toshiba Semiconductor and Storage SSM6J53FE.pdf Description: MOSFET P-CH 20V 1.8A ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6K211FE,LF SSM6K211FE,LF Toshiba Semiconductor and Storage SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+10.45 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6L35FE,LM SSM6L35FE,LM Toshiba Semiconductor and Storage SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
4000+5.26 грн
8000+4.84 грн
12000+4.18 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6L36FE,LM SSM6L36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11738&prodName=SSM6L36FE Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)
4000+4.74 грн
8000+4.24 грн
12000+4.04 грн
20000+3.77 грн
28000+3.59 грн
40000+3.54 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6N35FE,LM SSM6N35FE,LM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N37CTD(TPL3) SSM6N37CTD(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=968&prodName=SSM6N37CTD Description: MOSFET 2N-CH 20V 0.25A CST6D
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N42FE(TE85L,F) SSM6N42FE(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N44FE,LM SSM6N44FE,LM Toshiba Semiconductor and Storage docget.jsp?did=366&prodName=SSM6N44FE Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
на замовлення 92000 шт:
термін постачання 21-31 дні (днів)
4000+4.34 грн
8000+3.91 грн
12000+3.82 грн
20000+3.57 грн
28000+3.48 грн
40000+3.47 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6P15FE(TE85L,F) SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage SSM6P15FE_datasheet_en_20220224.pdf?did=22741&prodName=SSM6P15FE Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
4000+6.87 грн
8000+5.51 грн
12000+5.39 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6P35FE(TE85L,F) SSM6P35FE(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6P41FE(TE85L,F) SSM6P41FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=584&prodName=SSM6P41FE Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+7.89 грн
8000+7.50 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM3J114TU(T5L,T) SSM3J114TU(T5L,T) Toshiba Semiconductor and Storage docget.jsp?did=6714&prodName=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
на замовлення 5158 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM3J120TU,LF SSM3J120TU,LF Toshiba Semiconductor and Storage SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU Description: MOSFET P-CH 20V 4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
товару немає в наявності
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SSM3J129TU(TE85L) SSM3J129TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU Description: MOSFET P-CH 20V 4.6A UFM
товару немає в наявності
В кошику  од. на суму  грн.
SSM3J130TU,LF SSM3J130TU,LF Toshiba Semiconductor and Storage SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 104998 шт:
термін постачання 21-31 дні (днів)
9+39.20 грн
13+25.08 грн
100+17.03 грн
500+12.51 грн
1000+11.36 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SSM3J321T(TE85L,F) SSM3J321T(TE85L,F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SSM3J46CTB(TPL3) SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=1707&prodName=SSM3J46CTB Description: MOSFET P-CH 20V 2A CST3B
на замовлення 25072 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TPCA8028-H(TE12LQM docget.jsp?did=11150&prodName=TPCA8028-H
TPCA8028-H(TE12LQM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 50A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
товару немає в наявності
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TLEGD1060(T18) TLBD,TLEGD1060(T18).pdf
TLEGD1060(T18)
Виробник: Toshiba Semiconductor and Storage
Description: LED GREEN 2MINIPLCC SMD
товару немає в наявності
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TLBD1060(T18) TLBD,TLEGD1060(T18).pdf
TLBD1060(T18)
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE 2MINIPLCC SMD
товару немає в наявності
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TMP95C061BFG(Z) docget.jsp?did=11445&prodName=TMP95C061BFG
TMP95C061BFG(Z)
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 16BIT ROMLESS 100QFP
товару немає в наявності
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TMPM330FDFG(C) datasheet_en_20230731.pdf?did=586
TMPM330FDFG(C)
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+400.95 грн
10+320.28 грн
25+297.49 грн
200+241.15 грн
В кошику  од. на суму  грн.
TL12W03-D(T30) TL12W03-D(T30).pdf
TL12W03-D(T30)
Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 6500K 2SMD
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TL12W03-N(T30) TL12W03-N(T30).pdf
TL12W03-N(T30)
Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 5000K 2SMD
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TL12W03-D(T30) TL12W03-D(T30).pdf
TL12W03-D(T30)
Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 6500K 2SMD
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TL12W03-N(T30) TL12W03-N(T30).pdf
TL12W03-N(T30)
Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 5000K 2SMD
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TMPA900CMXBG(EY)
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 32K FLASH 289FPGA
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TLP170A(TP,F) TLP170A_datasheet_en_20190617.pdf?did=306&prodName=TLP170A
TLP170A(TP,F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 400 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
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TLP3902(TPR,U,F)
TLP3902(TPR,U,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 1CH PHVOLT 6-MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 600µs, 2ms
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP163J(TPR,U,C,F) TLP163J_datasheet_en_20190610.pdf?did=22389&prodName=TLP163J
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 2.5KV TRIAC 6MFSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 2500Vrms
Approval Agency: UR
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-MFSOP, 4 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
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TLP170G(TP,F) TLP170G_datasheet_en_20190617.pdf?did=321&prodName=TLP170G
TLP170G(TP,F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 100MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 100 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
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TLP116A(E TLP116A.pdf
TLP116A(E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL SO6-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.58V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.87 грн
10+67.78 грн
Мінімальне замовлення: 3
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TLP105(F)
TLP105(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP117(F)
TLP117(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 10 mA
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TLP109(E TLP109%28IGM%29_datasheet_en_20190920.pdf?did=2465&prodName=TLP109(IGM)
TLP109(E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 5 LEAD
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.64V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 6-SO, 5 Lead
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.69 грн
10+68.18 грн
125+46.21 грн
Мінімальне замовлення: 3
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TLP700(F)
TLP700(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SDIP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 1.5A, 1.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
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TLP715(F)
TLP715(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6-SDIP GW
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SDIP Gull Wing
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP718(F) docget.jsp?did=22613&prodName=TLP718
TLP718(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL 6DIP GW
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TLP108(F)
TLP108(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-MFSOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 20V
Voltage - Forward (Vf) (Typ): 1.57V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-MFSOP, 5 Lead
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 25 mA
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ULN2003AFWG,O,N,E docget.jsp?did=7063&prodName=ULN2003APG
ULN2003AFWG,O,N,E
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR RELAY 7NPN 1:1 16SOL
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ULN2803AFWG,C,EL
ULN2803AFWG,C,EL
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 8NPN DARL 50V 0.5A 18SOL
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Transistor Type: 8 NPN Darlington
Operating Temperature: -40°C ~ 85°C (TA)
Power - Max: 480mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Supplier Device Package: 18-SOP
Part Status: Obsolete
Number of Inputs: 8
Number of Circuits: 8
Logic Type: NPN
Voltage - Supply: 2.5V ~ 30V
Current - Output High, Low: 268mA, 90mA
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1SS381,L3F
1SS381,L3F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE RF SWITCH 30V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: ESC
Current - Max: 100 mA
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TD62004AFG,N,EL
TD62004AFG,N,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 7/0 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0V ~ 50V
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Part Status: Obsolete
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SSM3J114TU(T5L,T) docget.jsp?did=6714&prodName=SSM3J114TU
SSM3J114TU(T5L,T)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
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SSM3J120TU,LF SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU
SSM3J120TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
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SSM3J129TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU
SSM3J129TU(TE85L)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
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SSM3J130TU,LF SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU
SSM3J130TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.93 грн
6000+9.72 грн
9000+9.31 грн
15000+8.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM3J307T(TE85L,F) Mosfets_Prod_Guide.pdf
SSM3J307T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 10 V
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SSM3J321T(TE85L,F) Mosfets_Prod_Guide.pdf
SSM3J321T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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SSM3J46CTB(TPL3) docget.jsp?did=1707&prodName=SSM3J46CTB
SSM3J46CTB(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A CST3B
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
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SSM3K123TU,LF Mosfets_Prod_Guide.pdf
SSM3K123TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.53 грн
6000+8.56 грн
9000+7.95 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM3K315T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K315T
SSM3K315T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A TSM
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SSM3K316T(TE85L,F) SSM3K316T.pdf
SSM3K316T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
товару немає в наявності
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SSM3K318T(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
товару немає в наявності
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SSM3K7002BSU,LF SSM3K7002BSU.pdf
SSM3K7002BSU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
товару немає в наявності
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SSM4K27CTTPL3 SSM4K27CT_datasheet_en_20140301.pdf?did=5965&prodName=SSM4K27CT
SSM4K27CTTPL3
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA CST4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 205mOhm @ 250mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 1mA
Supplier Device Package: CST4 (1.2x0.8)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 10 V
товару немає в наявності
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SSM5G10TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM5G10TU
SSM5G10TU(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.5A UFV
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM5H12TU(TE85L,F) docget.jsp?did=12336&prodName=SSM5H12TU
SSM5H12TU(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
товару немає в наявності
В кошику  од. на суму  грн.
SSM6J409TU(TE85L,F Mosfets_Prod_Guide.pdf
SSM6J409TU(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
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SSM6J51TUTE85LF docget.jsp?type=datasheet&lang=en&pid=SSM6J51TU
SSM6J51TUTE85LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 4A UF6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6J53FE(TE85L,F) SSM6J53FE.pdf
SSM6J53FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6K211FE,LF SSM6K211FE_datasheet_en_20140301.pdf?did=12358&prodName=SSM6K211FE
SSM6K211FE,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+10.45 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6L35FE,LM SSM6L16FE_datasheet_en_20140301.pdf?did=1226&prodName=SSM6L16FE
SSM6L35FE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+5.26 грн
8000+4.84 грн
12000+4.18 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6L36FE,LM docget.jsp?did=11738&prodName=SSM6L36FE
SSM6L36FE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+4.74 грн
8000+4.24 грн
12000+4.04 грн
20000+3.77 грн
28000+3.59 грн
40000+3.54 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6N35FE,LM Mosfets_Prod_Guide.pdf
SSM6N35FE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.18A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
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SSM6N37CTD(TPL3) docget.jsp?did=968&prodName=SSM6N37CTD
SSM6N37CTD(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.25A CST6D
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N42FE(TE85L,F) Mosfets_Prod_Guide.pdf
SSM6N42FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N44FE,LM docget.jsp?did=366&prodName=SSM6N44FE
SSM6N44FE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: ES6
на замовлення 92000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+4.34 грн
8000+3.91 грн
12000+3.82 грн
20000+3.57 грн
28000+3.48 грн
40000+3.47 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6P15FE(TE85L,F) SSM6P15FE_datasheet_en_20220224.pdf?did=22741&prodName=SSM6P15FE
SSM6P15FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: ES6
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+6.87 грн
8000+5.51 грн
12000+5.39 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM6P35FE(TE85L,F) Mosfets_Prod_Guide.pdf
SSM6P35FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.1A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товару немає в наявності
В кошику  од. на суму  грн.
SSM6P41FE(TE85L,F) docget.jsp?did=584&prodName=SSM6P41FE
SSM6P41FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.72A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 720mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+7.89 грн
8000+7.50 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
SSM3J114TU(T5L,T) docget.jsp?did=6714&prodName=SSM3J114TU
SSM3J114TU(T5L,T)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
на замовлення 5158 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM3J120TU,LF SSM3J120TU_datasheet_en_20140301.pdf?did=6719&prodName=SSM3J120TU
SSM3J120TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1484 pF @ 10 V
товару немає в наявності
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SSM3J129TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J129TU
SSM3J129TU(TE85L)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.6A UFM
товару немає в наявності
В кошику  од. на суму  грн.
SSM3J130TU,LF SSM3J130TU_datasheet_en_20140301.pdf?did=481&prodName=SSM3J130TU
SSM3J130TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
на замовлення 104998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.20 грн
13+25.08 грн
100+17.03 грн
500+12.51 грн
1000+11.36 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SSM3J321T(TE85L,F) Mosfets_Prod_Guide.pdf
SSM3J321T(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSM
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SSM3J46CTB(TPL3) docget.jsp?did=1707&prodName=SSM3J46CTB
SSM3J46CTB(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A CST3B
на замовлення 25072 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
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