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TA76431FR(TE12L,F) TA76431FR(TE12L,F) Toshiba Semiconductor and Storage TA76431F,FR.pdf Description: IC VREF SHUNT ADJ PW-MINI
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TA76432FC(TE85L,F) TA76432FC(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18380&prodName=TA76432FC Description: IC VREF SHUNT ADJ SMV
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TA76L431FT(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=18376&prodName=TA76431F Description: IC VREF SHUNT ADJ UFV
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TA78L012AP(TPE6,F) TA78L012AP(TPE6,F) Toshiba Semiconductor and Storage TA78L05PF_TA78L15PF_e080422.pdf Description: IC REG LDO 12V 0.15A LSTM
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TA78L10F(TE12L,F) TA78L10F(TE12L,F) Toshiba Semiconductor and Storage TA78LxxF.pdf Description: IC REG LINEAR 10V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 10V
Part Status: Obsolete
PSRR: 43dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L24F(TE12L,F) TA78L24F(TE12L,F) Toshiba Semiconductor and Storage TA78LxxF.pdf Description: IC REG LINEAR 24V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 35dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TK10A60D(Q,M) TK10A60D(Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK10A60D Description: MOSFET N-CH 600V 10A TO220SIS
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TK15A50D(Q,M) TK15A50D(Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK15A50D Description: MOSFET N-CH 500V 15A TO220SIS
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TK5A50D(Q,M) TK5A50D(Q,M) Toshiba Semiconductor and Storage docget.jsp?did=21792&prodName=TK5A50D Description: MOSFET N-CH 500V 5A TO220SIS
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TK5A50D(STA4,Q,M) TK5A50D(STA4,Q,M) Toshiba Semiconductor and Storage TK5A50D_datasheet_en_20131101.pdf?did=21792&prodName=TK5A50D Description: MOSFET N-CH 500V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
4+88.33 грн
Мінімальне замовлення: 4
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TPC6501(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20762&prodName=TPC6501 Description: TRANS NPN 10V 2A VS6
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TPC8026(TE12L,Q,M) TPC8026(TE12L,Q,M) Toshiba Semiconductor and Storage TPC8026.pdf Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 6.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
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TPC8036-H(TE12L,QM TPC8036-H(TE12L,QM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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TPC8118(TE12L,Q,M) TPC8118(TE12L,Q,M) Toshiba Semiconductor and Storage docget.jsp?pid=TPC8118&lang=en&type=datasheet Description: MOSFET P-CH 30V 13A 8-SOIC
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TPCA8025(TE12L,Q,M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
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TPCA8036-H(TE12L,Q Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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TPCA8A02-H(TE12LQM Toshiba Semiconductor and Storage docget.jsp?pid=TPCA8A02-H&lang=en&type=datasheet Description: MOSFET N-CH 30V 34A 8SOP ADV
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TPCA8A04-H(TE12L,Q Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 44A 8SOP ADV
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TPCP8003-H(TE85L,F Toshiba Semiconductor and Storage TPCP8003-H_en_datasheet_070622.pdf Description: MOSFET N-CH 100V 2.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
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TPCP8102(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7161&prodName=TPCP8102 Description: MOSFET P-CH 20V 7.3A PS-8
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TPCP8701(TE85L,F) Toshiba Semiconductor and Storage TPCP8701.pdf Description: TRANS 2NPN 50V 3A 8PS
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TPCP8901(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22558&prodName=TPCP8901 Description: TRANS NPN/PNP 50V 1A/0.8A 8PS
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TPCP8F01(TE85L,F) Toshiba Semiconductor and Storage TPCP8F01.pdf Description: MOSFET N-CH PNP 20V PS-8
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TPD1044F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=10911&prodName=TPD1044F Description: IC IPS LOW SIDE 41V 1A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 440mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PS-8 (2.9x2.4)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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U1GWJ49(TE12L,F) U1GWJ49(TE12L,F) Toshiba Semiconductor and Storage U1GWJ49.pdf Description: DIODE SCHOTTKY 40V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PW-MINI
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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U20DL2C48A(TE24L,Q U20DL2C48A(TE24L,Q Toshiba Semiconductor and Storage 20,U20(D,F)L2C48A.pdf Description: DIODE ARRAY GP 200V 20A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220SM
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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U20FL2C48A(TE24L,Q U20FL2C48A(TE24L,Q Toshiba Semiconductor and Storage 20,U20(D,F)L2C48A.pdf Description: DIODE ARRAY GP 300V 20A TO220SM
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U20GL2C48A(TE24L,Q U20GL2C48A(TE24L,Q Toshiba Semiconductor and Storage U20GL2C48A.pdf Description: DIODE ARRAY GP 400V 20A TO220SM
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U5DL2C48A(TE24R,Q U5DL2C48A(TE24R,Q Toshiba Semiconductor and Storage 5xL2C48A.pdf Description: DIODE ARRAY GP 200V 5A TO220SM
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TK10A60D(STA4,Q,M) TK10A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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TK13A60D(STA4,Q,M) TK13A60D(STA4,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 600V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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TK6A60D(STA4,Q,M) TK6A60D(STA4,Q,M) Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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TK72A08N1,S4X TK72A08N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13152&prodName=TK72A08N1 Description: MOSFET N-CH 75V 80A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
2+256.25 грн
Мінімальне замовлення: 2
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TPC6111(TE85L,F,M) TPC6111(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?did=439&prodName=TPC6111 Description: MOSFET P-CH 20V 5.5A VS-6
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TPC8042(TE12L,Q,M) TPC8042(TE12L,Q,M) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPC8045-H(TE12L,QM TPC8045-H(TE12L,QM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8045-H Description: MOSFET N-CH 40V 18A 8-SOP
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TPC8051-H(TE12L,Q) TPC8051-H(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8051-H Description: MOSFET N-CH 80V 13A 8-SOP
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TPCA8026(TE12L,Q,M TPCA8026(TE12L,Q,M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 45A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
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TPCA8045-H(T2L1,VM TPCA8045-H(T2L1,VM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 40V 46A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCA8051-H(T2L1,VM TPCA8051-H(T2L1,VM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 80V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCP8005-H(TE85L,F TPCP8005-H(TE85L,F Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC6111(TE85L,F,M) TPC6111(TE85L,F,M) Toshiba Semiconductor and Storage docget.jsp?did=439&prodName=TPC6111 Description: MOSFET P-CH 20V 5.5A VS-6
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TPC8045-H(TE12L,QM TPC8045-H(TE12L,QM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8045-H Description: MOSFET N-CH 40V 18A 8-SOP
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TPC8048-H(TE12L,Q) TPC8048-H(TE12L,Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 16A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPC8051-H(TE12L,Q) TPC8051-H(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8051-H Description: MOSFET N-CH 80V 13A 8-SOP
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TPCA8026(TE12L,Q,M TPCA8026(TE12L,Q,M Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 45A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)
3+139.27 грн
10+111.35 грн
100+88.65 грн
500+70.40 грн
1000+59.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPCA8045-H(T2L1,VM TPCA8045-H(T2L1,VM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 40V 46A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCA8051-H(T2L1,VM TPCA8051-H(T2L1,VM Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 80V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCP8005-H(TE85L,F TPCP8005-H(TE85L,F Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 30V 11A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8045-H(TE12L,QM TPC8045-H(TE12L,QM Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8045-H Description: MOSFET N-CH 40V 18A 8-SOP
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TPC8051-H(TE12L,Q) TPC8051-H(TE12L,Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TPC8051-H Description: MOSFET N-CH 80V 13A 8-SOP
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TLEGD1060(T18) TLEGD1060(T18) Toshiba Semiconductor and Storage TLBD,TLEGD1060(T18).pdf Description: LED GREEN 2MINIPLCC SMD
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TLBD1060(T18) TLBD1060(T18) Toshiba Semiconductor and Storage TLBD,TLEGD1060(T18).pdf Description: LED BLUE 2MINIPLCC SMD
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TLEGE1100B(T11) Toshiba Semiconductor and Storage TLxxE1100B(T11)_Rev2008.pdf Description: LED GREEN 2PLCC SMD
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TLBE1100B(T11) Toshiba Semiconductor and Storage TLxxE1100B(T11)_Rev2008.pdf Description: LED BLUE 2PLCC SMD
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TLBD1100B(T11) Toshiba Semiconductor and Storage TLxxD1100B%28T11%29_Rev2012.pdf Description: LED BLUE SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-PLCC
Color: Blue
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 20mA
Height (Max): 2.10mm
Wavelength - Peak: 468nm
Wavelength - Dominant: 470nm
Supplier Device Package: SMD
Lens Style: Round with Flat Top
Lens Size: 2.40mm Dia
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TLBA1100B(T11) Toshiba Semiconductor and Storage TLBA1100B(T11)_datasheet_en_20120202.pdf?did=8898&prodName=TLBA1100B(T11) Description: LED BLUE SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-PLCC
Color: Blue
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.7V
Current - Test: 10mA
Height (Max): 2.10mm
Wavelength - Peak: 428nm
Wavelength - Dominant: 465nm
Supplier Device Package: SMD
Part Status: Obsolete
Lens Style: Round with Flat Top
Lens Size: 2.40mm Dia
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SSM3K7002FUT5LF SSM3K7002FUT5LF Toshiba Semiconductor and Storage docget.jsp?did=22726&prodName=SSM3K7002FU Description: MOSFET N-CH 60V 0.2A USM
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SSM6N7002FUTE85LF SSM6N7002FUTE85LF Toshiba Semiconductor and Storage docget.jsp?did=22727&prodName=SSM6N7002FU Description: MOSFET 2N-CH 60V 0.2A US6
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TCR5SB18A(T5L,F,T) TCR5SB18A(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5SB15 Description: IC REG LDO 1.8V 0.15A SMV
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TA76431FR(TE12L,F) TA76431F,FR.pdf
TA76431FR(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC VREF SHUNT ADJ PW-MINI
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TA76432FC(TE85L,F) docget.jsp?did=18380&prodName=TA76432FC
TA76432FC(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC VREF SHUNT ADJ SMV
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TA76L431FT(TE85L,F docget.jsp?did=18376&prodName=TA76431F
Виробник: Toshiba Semiconductor and Storage
Description: IC VREF SHUNT ADJ UFV
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TA78L012AP(TPE6,F) TA78L05PF_TA78L15PF_e080422.pdf
TA78L012AP(TPE6,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 12V 0.15A LSTM
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TA78L10F(TE12L,F) TA78LxxF.pdf
TA78L10F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 10V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 10V
Part Status: Obsolete
PSRR: 43dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TA78L24F(TE12L,F) TA78LxxF.pdf
TA78L24F(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 24V 150MA PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PW-MINI (SOT-89)
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 35dB (120Hz)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6.5 mA
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TK10A60D(Q,M) docget.jsp?type=datasheet&lang=en&pid=TK10A60D
TK10A60D(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
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TK15A50D(Q,M) docget.jsp?type=datasheet&lang=en&pid=TK15A50D
TK15A50D(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 15A TO220SIS
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TK5A50D(Q,M) docget.jsp?did=21792&prodName=TK5A50D
TK5A50D(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SIS
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TK5A50D(STA4,Q,M) TK5A50D_datasheet_en_20131101.pdf?did=21792&prodName=TK5A50D
TK5A50D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.33 грн
Мінімальне замовлення: 4
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TPC6501(TE85L,F) docget.jsp?did=20762&prodName=TPC6501
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 10V 2A VS6
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TPC8026(TE12L,Q,M) TPC8026.pdf
TPC8026(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 6.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
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TPC8036-H(TE12L,QM Mosfets_Prod_Guide.pdf
TPC8036-H(TE12L,QM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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TPC8118(TE12L,Q,M) docget.jsp?pid=TPC8118&lang=en&type=datasheet
TPC8118(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 13A 8-SOIC
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TPCA8025(TE12L,Q,M Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
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TPCA8036-H(TE12L,Q Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
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TPCA8A02-H(TE12LQM docget.jsp?pid=TPCA8A02-H&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 34A 8SOP ADV
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TPCA8A04-H(TE12L,Q Mosfets_Prod_Guide.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 44A 8SOP ADV
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TPCP8003-H(TE85L,F TPCP8003-H_en_datasheet_070622.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 2.2A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.1A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
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TPCP8102(TE85L,F) docget.jsp?did=7161&prodName=TPCP8102
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 7.3A PS-8
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TPCP8701(TE85L,F) TPCP8701.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 3A 8PS
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TPCP8901(TE85L,F) docget.jsp?did=22558&prodName=TPCP8901
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 1A/0.8A 8PS
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TPCP8F01(TE85L,F) TPCP8F01.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PNP 20V PS-8
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TPD1044F(TE85L,F) docget.jsp?did=10911&prodName=TPD1044F
Виробник: Toshiba Semiconductor and Storage
Description: IC IPS LOW SIDE 41V 1A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 440mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PS-8 (2.9x2.4)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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U1GWJ49(TE12L,F) U1GWJ49.pdf
U1GWJ49(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PW-MINI
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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U20DL2C48A(TE24L,Q 20,U20(D,F)L2C48A.pdf
U20DL2C48A(TE24L,Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 20A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220SM
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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U20FL2C48A(TE24L,Q 20,U20(D,F)L2C48A.pdf
U20FL2C48A(TE24L,Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 300V 20A TO220SM
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U20GL2C48A(TE24L,Q U20GL2C48A.pdf
U20GL2C48A(TE24L,Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 20A TO220SM
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U5DL2C48A(TE24R,Q 5xL2C48A.pdf
U5DL2C48A(TE24R,Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 5A TO220SM
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TK10A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK10A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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TK13A60D(STA4,Q,M) Mosfets_Prod_Guide.pdf
TK13A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 13A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
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TK6A60D(STA4,Q,M)
TK6A60D(STA4,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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TK72A08N1,S4X docget.jsp?did=13152&prodName=TK72A08N1
TK72A08N1,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 80A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+256.25 грн
Мінімальне замовлення: 2
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TPC6111(TE85L,F,M) docget.jsp?did=439&prodName=TPC6111
TPC6111(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
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TPC8042(TE12L,Q,M) Mosfets_Prod_Guide.pdf
TPC8042(TE12L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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TPC8045-H(TE12L,QM docget.jsp?type=datasheet&lang=en&pid=TPC8045-H
TPC8045-H(TE12L,QM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 18A 8-SOP
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TPC8051-H(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TPC8051-H
TPC8051-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 13A 8-SOP
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TPCA8026(TE12L,Q,M Mosfets_Prod_Guide.pdf
TPCA8026(TE12L,Q,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
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TPCA8045-H(T2L1,VM Mosfets_Prod_Guide.pdf
TPCA8045-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 46A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCA8051-H(T2L1,VM Mosfets_Prod_Guide.pdf
TPCA8051-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 28A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCP8005-H(TE85L,F Mosfets_Prod_Guide.pdf
TPCP8005-H(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC6111(TE85L,F,M) docget.jsp?did=439&prodName=TPC6111
TPC6111(TE85L,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
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TPC8045-H(TE12L,QM docget.jsp?type=datasheet&lang=en&pid=TPC8045-H
TPC8045-H(TE12L,QM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 18A 8-SOP
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TPC8048-H(TE12L,Q) Mosfets_Prod_Guide.pdf
TPC8048-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 16A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP (5.5x6.0)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPC8051-H(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TPC8051-H
TPC8051-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 13A 8-SOP
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
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TPCA8026(TE12L,Q,M Mosfets_Prod_Guide.pdf
TPCA8026(TE12L,Q,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.27 грн
10+111.35 грн
100+88.65 грн
500+70.40 грн
1000+59.73 грн
Мінімальне замовлення: 3
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TPCA8045-H(T2L1,VM Mosfets_Prod_Guide.pdf
TPCA8045-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 46A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCA8051-H(T2L1,VM Mosfets_Prod_Guide.pdf
TPCA8051-H(T2L1,VM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 28A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
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TPCP8005-H(TE85L,F Mosfets_Prod_Guide.pdf
TPCP8005-H(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PS-8 (2.9x2.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
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TPC8045-H(TE12L,QM docget.jsp?type=datasheet&lang=en&pid=TPC8045-H
TPC8045-H(TE12L,QM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 18A 8-SOP
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TPC8051-H(TE12L,Q) docget.jsp?type=datasheet&lang=en&pid=TPC8051-H
TPC8051-H(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 13A 8-SOP
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TLEGD1060(T18) TLBD,TLEGD1060(T18).pdf
TLEGD1060(T18)
Виробник: Toshiba Semiconductor and Storage
Description: LED GREEN 2MINIPLCC SMD
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TLBD1060(T18) TLBD,TLEGD1060(T18).pdf
TLBD1060(T18)
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE 2MINIPLCC SMD
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TLEGE1100B(T11) TLxxE1100B(T11)_Rev2008.pdf
Виробник: Toshiba Semiconductor and Storage
Description: LED GREEN 2PLCC SMD
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TLBE1100B(T11) TLxxE1100B(T11)_Rev2008.pdf
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE 2PLCC SMD
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TLBD1100B(T11) TLxxD1100B%28T11%29_Rev2012.pdf
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-PLCC
Color: Blue
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 70mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 20mA
Height (Max): 2.10mm
Wavelength - Peak: 468nm
Wavelength - Dominant: 470nm
Supplier Device Package: SMD
Lens Style: Round with Flat Top
Lens Size: 2.40mm Dia
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TLBA1100B(T11) TLBA1100B(T11)_datasheet_en_20120202.pdf?did=8898&prodName=TLBA1100B(T11)
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-PLCC
Color: Blue
Size / Dimension: 3.20mm L x 2.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 7mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.7V
Current - Test: 10mA
Height (Max): 2.10mm
Wavelength - Peak: 428nm
Wavelength - Dominant: 465nm
Supplier Device Package: SMD
Part Status: Obsolete
Lens Style: Round with Flat Top
Lens Size: 2.40mm Dia
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SSM3K7002FUT5LF docget.jsp?did=22726&prodName=SSM3K7002FU
SSM3K7002FUT5LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 0.2A USM
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SSM6N7002FUTE85LF docget.jsp?did=22727&prodName=SSM6N7002FU
SSM6N7002FUTE85LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
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TCR5SB18A(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=TCR5SB15
TCR5SB18A(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.15A SMV
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