Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 24 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| TPCP8701(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 3A 8PS |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| TPCP8901(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 1A/0.8A 8PS |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| TPCP8F01(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH PNP 20V PS-8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| TPD1044F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC IPS LOW SIDE 41V 1A PS-8Part Status: Active Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PS-8 (2.9x2.4) Ratio - Input:Output: 1:1 Current - Output (Max): 1A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 3V ~ 6V Input Type: Non-Inverting Rds On (Typ): 440mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 125°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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U1GWJ49(TE12L,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A PW-MINICurrent - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -40°C ~ 125°C Supplier Device Package: PW-MINI Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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U20DL2C48A(TE24L,Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 20A TO220SMReverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Supplier Device Package: TO-220SM Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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U20FL2C48A(TE24L,Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 300V 20A TO220SM |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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U20GL2C48A(TE24L,Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 400V 20A TO220SM |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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U5DL2C48A(TE24R,Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 5A TO220SM |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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TK10A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 10A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK13A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 13A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK6A60D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TK72A08N1,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 75V 80A TO220SISPackage / Case: TO-220-3 Full Pack Packaging: Bulk Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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TPC6111(TE85L,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A VS-6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TPC8042(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 18A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP (5.5x6.0) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPC8045-H(TE12L,QM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 18A 8-SOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TPC8051-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 13A 8-SOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TPCA8026(TE12L,Q,M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 45A 8SOPVgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPCA8045-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 46A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPCA8051-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 28A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPCP8005-H(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 11A PS-8Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PS-8 (2.9x2.4) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPC6111(TE85L,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 5.5A VS-6 |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TPC8045-H(TE12L,QM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 18A 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPC8048-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 16A 8SOPPackage / Case: 8-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP (5.5x6.0) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPC8051-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 13A 8-SOP |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TPCA8026(TE12L,Q,M | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 45A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 1171 шт: термін постачання 21-31 дні (днів) |
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TPCA8045-H(T2L1,VM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 46A 8SOPPart Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPCP8005-H(TE85L,F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 11A PS-8Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PS-8 (2.9x2.4) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPC8045-H(TE12L,QM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 18A 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TPC8051-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 13A 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLEGD1060(T18) | Toshiba Semiconductor and Storage |
Description: LED GREEN 2MINIPLCC SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLBD1060(T18) | Toshiba Semiconductor and Storage |
Description: LED BLUE 2MINIPLCC SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TLEGE1100B(T11) | Toshiba Semiconductor and Storage |
Description: LED GREEN 2PLCC SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| TLBE1100B(T11) | Toshiba Semiconductor and Storage |
Description: LED BLUE 2PLCC SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| TLBD1100B(T11) | Toshiba Semiconductor and Storage |
Description: LED BLUE SMDLens Size: 2.40mm Dia Lens Style: Round with Flat Top Supplier Device Package: SMD Wavelength - Dominant: 470nm Wavelength - Peak: 468nm Height (Max): 2.10mm Current - Test: 20mA Voltage - Forward (Vf) (Typ): 3.3V Configuration: Standard Millicandela Rating: 70mcd Mounting Type: Surface Mount Size / Dimension: 3.20mm L x 2.80mm W Color: Blue Package / Case: 2-PLCC Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
| TLBA1100B(T11) | Toshiba Semiconductor and Storage |
Description: LED BLUE SMDConfiguration: Standard Millicandela Rating: 7mcd Mounting Type: Surface Mount Size / Dimension: 3.20mm L x 2.80mm W Color: Blue Package / Case: 2-PLCC Packaging: Tape & Reel (TR) Lens Size: 2.40mm Dia Lens Style: Round with Flat Top Part Status: Obsolete Supplier Device Package: SMD Wavelength - Dominant: 465nm Wavelength - Peak: 428nm Height (Max): 2.10mm Current - Test: 10mA Voltage - Forward (Vf) (Typ): 3.7V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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SSM3K7002FUT5LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 0.2A USM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SSM6N7002FUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.2A US6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TCR5SB18A(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC REG LDO 1.8V 0.15A SMV |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TCR5SB25A(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC REG LDO 2.5V 0.15A SMV |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TCR5SB28A(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC REG LDO 2.8V 0.15A SMV |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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TCR5SB30A(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 150MA SMV Protection Features: Over Current Voltage Dropout (Max): 0.19V @ 50mA PSRR: 80dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 3V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 75 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TCR5SB33A(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 150MA SMV Protection Features: Over Current Voltage Dropout (Max): 0.19V @ 50mA PSRR: 80dB (1kHz) Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SMV Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 75 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SSM3K36FS(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: MOSF N CHANNEL 20V500MA SSM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SSM3J36FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 330MA SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V |
на замовлення 318000 шт: термін постачання 21-31 дні (днів) |
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TC75S101F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.5 V Current - Output / Channel: 1.5 mA Number of Circuits: 1 Supplier Device Package: SMV Voltage - Input Offset: 1.2 mV Current - Input Bias: 0.1 pA Slew Rate: 0.15V/µs Current - Supply: 63µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSF07S30U(TPH3,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 700MA USC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DSF05S30U(TPH3,F) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 500MA USC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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1SS309(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SMVCurrent - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMV Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 4 Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) |
на замовлення 366000 шт: термін постачання 21-31 дні (днів) |
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2SA1091-R(TPE2,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 300V 0.1A TO-92 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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2SA1313YT5LFT | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.5A S-MINI |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
| TCM9001MD(ES) | Toshiba Semiconductor and Storage |
Description: SENSOR IMAGE CMOS CAMERACUBE |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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TPCA8028-H(TE12LQM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 50A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLEGD1060(T18) | Toshiba Semiconductor and Storage |
Description: LED GREEN 2MINIPLCC SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLBD1060(T18) | Toshiba Semiconductor and Storage |
Description: LED BLUE 2MINIPLCC SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TMP95C061BFG(Z) | Toshiba Semiconductor and Storage |
Description: IC MCU 16BIT ROMLESS 100QFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TMPM330FDFG(C) | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 512KB FLASH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 79 Supplier Device Package: 100-LQFP (14x14) Peripherals: POR, WDT Connectivity: I2C, SIO, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 12x10b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -20°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 512KB (512K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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TL12W03-D(T30) | Toshiba Semiconductor and Storage |
Description: LED COOL WHITE 6500K 2SMD |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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TL12W03-N(T30) | Toshiba Semiconductor and Storage |
Description: LED COOL WHITE 5000K 2SMD |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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TL12W03-D(T30) | Toshiba Semiconductor and Storage |
Description: LED COOL WHITE 6500K 2SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| TPCP8701(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 3A 8PS
Description: TRANS 2NPN 50V 3A 8PS
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPCP8901(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 1A/0.8A 8PS
Description: TRANS NPN/PNP 50V 1A/0.8A 8PS
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPCP8F01(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PNP 20V PS-8
Description: MOSFET N-CH PNP 20V PS-8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPD1044F(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC IPS LOW SIDE 41V 1A PS-8
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PS-8 (2.9x2.4)
Ratio - Input:Output: 1:1
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 3V ~ 6V
Input Type: Non-Inverting
Rds On (Typ): 440mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 125°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: IC IPS LOW SIDE 41V 1A PS-8
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PS-8 (2.9x2.4)
Ratio - Input:Output: 1:1
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 3V ~ 6V
Input Type: Non-Inverting
Rds On (Typ): 440mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 125°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| U1GWJ49(TE12L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A PW-MINI
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: PW-MINI
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A PW-MINI
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: PW-MINI
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| U20DL2C48A(TE24L,Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 20A TO220SM
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: TO-220SM
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Description: DIODE ARRAY GP 200V 20A TO220SM
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Supplier Device Package: TO-220SM
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
товару немає в наявності
В кошику
од. на суму грн.
| U20FL2C48A(TE24L,Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 300V 20A TO220SM
Description: DIODE ARRAY GP 300V 20A TO220SM
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| U20GL2C48A(TE24L,Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 20A TO220SM
Description: DIODE ARRAY GP 400V 20A TO220SM
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| U5DL2C48A(TE24R,Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 5A TO220SM
Description: DIODE ARRAY GP 200V 5A TO220SM
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TK10A60D(STA4,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TK13A60D(STA4,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 13A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Packaging: Tube
Description: MOSFET N-CH 600V 13A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TK6A60D(STA4,Q,M) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 600V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| TK72A08N1,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 80A TO220SIS
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Description: MOSFET N-CH 75V 80A TO220SIS
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 8200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
на замовлення 62 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.02 грн |
| 50+ | 111.76 грн |
| TPC6111(TE85L,F,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
Description: MOSFET P-CH 20V 5.5A VS-6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPC8042(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 18A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 18A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TPC8045-H(TE12L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 18A 8-SOP
Description: MOSFET N-CH 40V 18A 8-SOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPC8051-H(TE12L,Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 13A 8-SOP
Description: MOSFET N-CH 80V 13A 8-SOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TPCA8026(TE12L,Q,M |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Description: MOSFET N-CH 30V 45A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| TPCA8045-H(T2L1,VM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 46A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 46A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TPCA8051-H(T2L1,VM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 28A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 28A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| TPCP8005-H(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TPC6111(TE85L,F,M) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A VS-6
Description: MOSFET P-CH 20V 5.5A VS-6
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TPC8045-H(TE12L,QM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 18A 8-SOP
Description: MOSFET N-CH 40V 18A 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
| TPC8048-H(TE12L,Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 16A 8SOP
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 16A 8SOP
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| TPC8051-H(TE12L,Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 13A 8-SOP
Description: MOSFET N-CH 80V 13A 8-SOP
на замовлення 320 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TPCA8026(TE12L,Q,M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.18 грн |
| 10+ | 113.06 грн |
| 100+ | 77.66 грн |
| 500+ | 58.67 грн |
| 1000+ | 54.10 грн |
| TPCA8045-H(T2L1,VM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 46A 8SOP
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 40V 46A 8SOP
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
товару немає в наявності
В кошику
од. на суму грн.
| TPCP8005-H(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A PS-8
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PS-8 (2.9x2.4)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| TPC8045-H(TE12L,QM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 18A 8-SOP
Description: MOSFET N-CH 40V 18A 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
| TPC8051-H(TE12L,Q) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 13A 8-SOP
Description: MOSFET N-CH 80V 13A 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
| TLEGD1060(T18) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED GREEN 2MINIPLCC SMD
Description: LED GREEN 2MINIPLCC SMD
товару немає в наявності
В кошику
од. на суму грн.
| TLBD1060(T18) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE 2MINIPLCC SMD
Description: LED BLUE 2MINIPLCC SMD
товару немає в наявності
В кошику
од. на суму грн.
| TLEGE1100B(T11) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED GREEN 2PLCC SMD
Description: LED GREEN 2PLCC SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TLBE1100B(T11) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE 2PLCC SMD
Description: LED BLUE 2PLCC SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TLBD1100B(T11) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE SMD
Lens Size: 2.40mm Dia
Lens Style: Round with Flat Top
Supplier Device Package: SMD
Wavelength - Dominant: 470nm
Wavelength - Peak: 468nm
Height (Max): 2.10mm
Current - Test: 20mA
Voltage - Forward (Vf) (Typ): 3.3V
Configuration: Standard
Millicandela Rating: 70mcd
Mounting Type: Surface Mount
Size / Dimension: 3.20mm L x 2.80mm W
Color: Blue
Package / Case: 2-PLCC
Packaging: Tape & Reel (TR)
Description: LED BLUE SMD
Lens Size: 2.40mm Dia
Lens Style: Round with Flat Top
Supplier Device Package: SMD
Wavelength - Dominant: 470nm
Wavelength - Peak: 468nm
Height (Max): 2.10mm
Current - Test: 20mA
Voltage - Forward (Vf) (Typ): 3.3V
Configuration: Standard
Millicandela Rating: 70mcd
Mounting Type: Surface Mount
Size / Dimension: 3.20mm L x 2.80mm W
Color: Blue
Package / Case: 2-PLCC
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TLBA1100B(T11) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE SMD
Configuration: Standard
Millicandela Rating: 7mcd
Mounting Type: Surface Mount
Size / Dimension: 3.20mm L x 2.80mm W
Color: Blue
Package / Case: 2-PLCC
Packaging: Tape & Reel (TR)
Lens Size: 2.40mm Dia
Lens Style: Round with Flat Top
Part Status: Obsolete
Supplier Device Package: SMD
Wavelength - Dominant: 465nm
Wavelength - Peak: 428nm
Height (Max): 2.10mm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 3.7V
Description: LED BLUE SMD
Configuration: Standard
Millicandela Rating: 7mcd
Mounting Type: Surface Mount
Size / Dimension: 3.20mm L x 2.80mm W
Color: Blue
Package / Case: 2-PLCC
Packaging: Tape & Reel (TR)
Lens Size: 2.40mm Dia
Lens Style: Round with Flat Top
Part Status: Obsolete
Supplier Device Package: SMD
Wavelength - Dominant: 465nm
Wavelength - Peak: 428nm
Height (Max): 2.10mm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 3.7V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SSM3K7002FUT5LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 0.2A USM
Description: MOSFET N-CH 60V 0.2A USM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6N7002FUTE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A US6
Description: MOSFET 2N-CH 60V 0.2A US6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR5SB18A(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.15A SMV
Description: IC REG LDO 1.8V 0.15A SMV
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR5SB25A(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.5V 0.15A SMV
Description: IC REG LDO 2.5V 0.15A SMV
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR5SB28A(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.15A SMV
Description: IC REG LDO 2.8V 0.15A SMV
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCR5SB30A(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 150MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.19V @ 50mA
PSRR: 80dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3V 150MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.19V @ 50mA
PSRR: 80dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TCR5SB33A(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 150MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.19V @ 50mA
PSRR: 80dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3.3V 150MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.19V @ 50mA
PSRR: 80dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 75 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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| SSM3K36FS(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSF N CHANNEL 20V500MA SSM
Description: MOSF N CHANNEL 20V500MA SSM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Мінімальне замовлення: 3000 шт В кошику од. на суму грн.
| SSM3J36FS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Description: MOSFET P-CH 20V 330MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
на замовлення 318000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.47 грн |
| 6000+ | 2.99 грн |
| 9000+ | 2.82 грн |
| 15000+ | 2.45 грн |
| 21000+ | 2.34 грн |
| 30000+ | 2.24 грн |
| TC75S101F(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 1.5 mA
Number of Circuits: 1
Supplier Device Package: SMV
Voltage - Input Offset: 1.2 mV
Current - Input Bias: 0.1 pA
Slew Rate: 0.15V/µs
Current - Supply: 63µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 1.5 mA
Number of Circuits: 1
Supplier Device Package: SMV
Voltage - Input Offset: 1.2 mV
Current - Input Bias: 0.1 pA
Slew Rate: 0.15V/µs
Current - Supply: 63µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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од. на суму грн.
| DSF07S30U(TPH3,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 700MA USC
Description: DIODE SCHOTTKY 30V 700MA USC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DSF05S30U(TPH3,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Description: DIODE SCHOTTKY 30V 500MA USC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1SS309(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SMV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 4 Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 80V 100MA SMV
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMV
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 4 Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
на замовлення 366000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.90 грн |
| 6000+ | 3.74 грн |
| 2SA1091-R(TPE2,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A TO-92
Description: TRANS PNP 300V 0.1A TO-92
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SA1313YT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Description: TRANS PNP 50V 0.5A S-MINI
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TCM9001MD(ES) |
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Виробник: Toshiba Semiconductor and Storage
Description: SENSOR IMAGE CMOS CAMERACUBE
Description: SENSOR IMAGE CMOS CAMERACUBE
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TPCA8028-H(TE12LQM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 50A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 50A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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| TLEGD1060(T18) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED GREEN 2MINIPLCC SMD
Description: LED GREEN 2MINIPLCC SMD
товару немає в наявності
В кошику
од. на суму грн.
| TLBD1060(T18) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED BLUE 2MINIPLCC SMD
Description: LED BLUE 2MINIPLCC SMD
товару немає в наявності
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од. на суму грн.
| TMP95C061BFG(Z) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 16BIT ROMLESS 100QFP
Description: IC MCU 16BIT ROMLESS 100QFP
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| TMPM330FDFG(C) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 512KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 79
Supplier Device Package: 100-LQFP (14x14)
Peripherals: POR, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 12x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -20°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 32BIT 512KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 79
Supplier Device Package: 100-LQFP (14x14)
Peripherals: POR, WDT
Connectivity: I2C, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 12x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -20°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 388.46 грн |
| 10+ | 310.31 грн |
| 25+ | 288.23 грн |
| 200+ | 233.64 грн |
| TL12W03-D(T30) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 6500K 2SMD
Description: LED COOL WHITE 6500K 2SMD
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| TL12W03-N(T30) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 5000K 2SMD
Description: LED COOL WHITE 5000K 2SMD
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| TL12W03-D(T30) |
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Виробник: Toshiba Semiconductor and Storage
Description: LED COOL WHITE 6500K 2SMD
Description: LED COOL WHITE 6500K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
























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