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2SK2777(Q) Toshiba Semiconductor and Storage 2SK2777%20Rev2009.pdf Description: MOSFET N-CH 600V 6A TO220FL
товар відсутній
2SK2777(SM,Q) 2SK2777(SM,Q) Toshiba Semiconductor and Storage 2SK2777%20Rev2009.pdf Description: MOSFET N-CH 600V 6A TO220SM
товар відсутній
2SK2777(TE24L,Q) 2SK2777(TE24L,Q) Toshiba Semiconductor and Storage 2SK2777%20Rev2009.pdf Description: MOSFET N-CH 600V 6A TO-220SM
товар відсутній
2SK2845(TE16L1,Q) 2SK2845(TE16L1,Q) Toshiba Semiconductor and Storage 2SK2845.pdf Description: MOSFET N-CH 900V 1A DP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 500mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
2SK2865(TE16L1,NQ) 2SK2865(TE16L1,NQ) Toshiba Semiconductor and Storage 2SK2865.pdf Description: MOSFET N-CH 600V 2A PW-MOLD
товар відсутній
2SK2866(F) 2SK2866(F) Toshiba Semiconductor and Storage 2SK2866.pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
товар відсутній
2SK2883(TE24L,Q) 2SK2883(TE24L,Q) Toshiba Semiconductor and Storage 2SK2883.pdf Description: MOSFET N-CH 800V 3A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
2SK2884(Q) Toshiba Semiconductor and Storage 2SK2884%20Rev2009.pdf Description: MOSFET N-CH 800V 5A TO220FL
товар відсутній
2SK2884(SM,Q) 2SK2884(SM,Q) Toshiba Semiconductor and Storage 2SK2884%20Rev2009.pdf Description: MOSFET N-CH 800V 5A TO220SM
товар відсутній
2SK2884(TE24L,Q) 2SK2884(TE24L,Q) Toshiba Semiconductor and Storage 2SK2884%20Rev2009.pdf Description: MOSFET N-CH 800V 5A TO220SM
товар відсутній
2SK2889(Q) Toshiba Semiconductor and Storage 2SK2889.pdf Description: MOSFET N-CH 600V 10A TO220FL
товар відсутній
2SK2949(TE24L,Q) 2SK2949(TE24L,Q) Toshiba Semiconductor and Storage 2SK2949.pdf Description: MOSFET N-CH 400V 10A TO220SM
товар відсутній
2SK2991(Q) Toshiba Semiconductor and Storage 2SK2991DS.pdf Description: MOSFET N-CH 500V 5A TO220FL
товар відсутній
2SK2991(SM,Q) 2SK2991(SM,Q) Toshiba Semiconductor and Storage 2SK2991DS.pdf Description: MOSFET N-CH 500V 5A TO220SM
товар відсутній
2SK2993(Q) Toshiba Semiconductor and Storage 2SK2993.pdf Description: MOSFET N-CH 250V 20A TO220FL
товар відсутній
2SK3313(Q) 2SK3313(Q) Toshiba Semiconductor and Storage 2SK3313_DS.pdf Description: MOSFET N-CH 500V 12A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
товар відсутній
2SK3342(TE16L1,NQ) 2SK3342(TE16L1,NQ) Toshiba Semiconductor and Storage 2SK3342.pdf Description: MOSFET N-CH 250V 4.5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
товар відсутній
2SK3387(TE24L,Q) Toshiba Semiconductor and Storage 2SK3387.pdf Description: MOSFET N-CH 150V 18A SC-97
товар відсутній
2SK3388(TE24L,Q) Toshiba Semiconductor and Storage 2SK3388.pdf Description: MOSFET N-CH 250V 20A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
товар відсутній
2SK3399(Q) Toshiba Semiconductor and Storage 2SK3399.pdf Description: MOSFET N-CH 600V 10A TO220FL
товар відсутній
2SK3403(Q) 2SK3403(Q) Toshiba Semiconductor and Storage 2SK3403.pdf Description: MOSFET N-CH 450V 13A TO220FL
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
2SK3437(Q) Toshiba Semiconductor and Storage 2SK3437.pdf Description: MOSFET N-CH 600V 10A TO220FL
товар відсутній
2SK3444(TE24L,Q) Toshiba Semiconductor and Storage docget.jsp?did=15860&prodName=2SK3444 Description: MOSFET N-CH 200V 25A SC-97
товар відсутній
2SK3462(TE16L1,NQ) 2SK3462(TE16L1,NQ) Toshiba Semiconductor and Storage 2SK3462.pdf Description: MOSFET N-CH 250V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 267 pF @ 10 V
товар відсутній
2SK3466(TE24L,Q) Toshiba Semiconductor and Storage 2SK3466.pdf Description: MOSFET N-CH 500V 5A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
товар відсутній
2SK3662(F) 2SK3662(F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 35A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V
товар відсутній
2SK3667(Q) 2SK3667(Q) Toshiba Semiconductor and Storage docget.jsp?did=1771&prodName=2SK3667 Description: MOSFET N-CH 600V 7.5A TO220SIS
товар відсутній
2SK3669(TE16L1,NQ) 2SK3669(TE16L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=755&prodName=2SK3669 Description: MOSFET N-CH 100V 10A PW-MOLD
товар відсутній
2SK3700(F) 2SK3700(F) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 900V 5A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
2+157.82 грн
10+ 126.03 грн
25+ 121.96 грн
100+ 94.17 грн
Мінімальне замовлення: 2
2SK3798(Q,M) 2SK3798(Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SK3798 Description: MOSFET N-CH 900V 4A TO220SIS
товар відсутній
2SK3799(Q) 2SK3799(Q) Toshiba Semiconductor and Storage docget.jsp?did=2256&prodName=2SK3799 Description: MOSFET N-CH 900V 8A TO220SIS
товар відсутній
2SK3842(TE24L,Q) Toshiba Semiconductor and Storage docget.jsp?did=996&prodName=2SK3842 Description: MOSFET N-CH 60V 75A SC-97
товар відсутній
2SK3844(Q) 2SK3844(Q) Toshiba Semiconductor and Storage 2SK3844.pdf Description: MOSFET N-CH 60V 45A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 10 V
товар відсутній
2SK3845(Q) 2SK3845(Q) Toshiba Semiconductor and Storage docget.jsp?did=998&prodName=2SK3845 Description: MOSFET N-CH 60V 70A TO-3PN
товар відсутній
2SK3863(TE16L1,Q) 2SK3863(TE16L1,Q) Toshiba Semiconductor and Storage 2SK3863.pdf Description: MOSFET N-CH 500V 5A DP
товар відсутній
2SK3868(Q,M) 2SK3868(Q,M) Toshiba Semiconductor and Storage 2SK3868.pdf Description: MOSFET N-CH 500V 5A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
товар відсутній
2SK3879(TE24L,Q) 2SK3879(TE24L,Q) Toshiba Semiconductor and Storage 2SK3879.pdf Description: MOSFET N-CH 800V 6.5A TO220SM
товар відсутній
2SK3906(Q) 2SK3906(Q) Toshiba Semiconductor and Storage 2SK3906.pdf Description: MOSFET N-CH 600V 20A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 25 V
товар відсутній
2SK3907(Q) 2SK3907(Q) Toshiba Semiconductor and Storage 2SK3907.pdf Description: MOSFET N-CH 500V 23A TO-3PN
товар відсутній
2SK3936(Q) 2SK3936(Q) Toshiba Semiconductor and Storage 2SK3936.pdf Description: MOSFET N-CH 500V 23A TO-3PN
товар відсутній
2SK3940(Q) 2SK3940(Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 75V 70A TO-3PN
товар відсутній
2SK4015(Q) 2SK4015(Q) Toshiba Semiconductor and Storage 2SK4015.pdf Description: MOSFET N-CH 600V 10A TO-220SIS
товар відсутній
2SK4016(Q) 2SK4016(Q) Toshiba Semiconductor and Storage 2SK4016.pdf Description: MOSFET N-CH 600V 13A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
товар відсутній
2SK4017(Q) 2SK4017(Q) Toshiba Semiconductor and Storage Mosfets_Prod_Guide.pdf Description: MOSFET N-CH 60V 5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
товар відсутній
2SK4021(Q) 2SK4021(Q) Toshiba Semiconductor and Storage 2SK4021.pdf Description: MOSFET N-CH 250V 4.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
товар відсутній
2SK4034(TE24L,Q) Toshiba Semiconductor and Storage 2SK4034.pdf Description: MOSFET N-CH 60V 75A SC-97
товар відсутній
30FWJ2C48M(Q) Toshiba Semiconductor and Storage 30FWJ2C48M,U30FWJ2C48M.pdf Description: DIODE ARRAY SCHOTTKY 30V TO220FL
товар відсутній
30JL2C41(F) 30JL2C41(F) Toshiba Semiconductor and Storage docget.jsp?pid=30JL2C41&lang=en&type=datasheet Description: DIODE ARRAY GP 600V 30A TO3P
товар відсутній
CMZM16(TE12N,Q) Toshiba Semiconductor and Storage Description: DIODE ZENER 16V 1W MFLAT
товар відсутній
CRF03(TE85L,Q,M) CRF03(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?did=1574&prodName=CRF03 Description: DIODE GEN PURP 600V 700MA SFLAT
товар відсутній
CRY91(TE85L,Q,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CRY62 Description: DIODE ZENER 9.1V 700MW SFLAT
товар відсутній
GT10G131(TE12L,Q) GT10G131(TE12L,Q) Toshiba Semiconductor and Storage GT10G131.pdf Description: IGBT 400V 1W 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
Supplier Device Package: 8-SOP (5.5x6.0)
Td (on/off) @ 25°C: 3.1µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 1 W
товар відсутній
GT10J312(Q) GT10J312(Q) Toshiba Semiconductor and Storage GT10J312.pdf Description: IGBT 600V 10A 60W TO220SM
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 60 W
товар відсутній
GT60N321(Q) Toshiba Semiconductor and Storage Description: IGBT 1000V 60A 170W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.5 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 330ns/700ns
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 170 W
товар відсутній
GT30J121(Q) GT30J121(Q) Toshiba Semiconductor and Storage docget.jsp?did=16680&prodName=GT30J121 Description: IGBT 600V 30A 170W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1mJ (on), 800µJ (off)
Test Condition: 300V, 30A, 24Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 170 W
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
2+232.47 грн
10+ 200.79 грн
25+ 189.79 грн
100+ 154.37 грн
Мінімальне замовлення: 2
GT30J324(Q) GT30J324(Q) Toshiba Semiconductor and Storage docget.jsp?did=16689&prodName=GT30J324 Description: IGBT 600V 30A 170W TO3PN
товар відсутній
GT50J121(Q) Toshiba Semiconductor and Storage Description: IGBT 600V 50A 240W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Test Condition: 300V, 50A, 13Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 240 W
товар відсутній
GT60M303(Q) Toshiba Semiconductor and Storage docget.jsp?did=16726&prodName=GT60M303 Description: IGBT 900V 60A 170W TO3P LH
товар відсутній
MP4020(F) Toshiba Semiconductor and Storage MP4020.pdf Description: TRANS 4NPN DARL 60V 2A 10SIP
товар відсутній
MP4411(Q) Toshiba Semiconductor and Storage MP4411.pdf Description: MOSFET 4N-CH 100V 3A 12-SIP
товар відсутній
2SK2777(Q) 2SK2777%20Rev2009.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220FL
товар відсутній
2SK2777(SM,Q) 2SK2777%20Rev2009.pdf
2SK2777(SM,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220SM
товар відсутній
2SK2777(TE24L,Q) 2SK2777%20Rev2009.pdf
2SK2777(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO-220SM
товар відсутній
2SK2845(TE16L1,Q) 2SK2845.pdf
2SK2845(TE16L1,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 1A DP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 9Ohm @ 500mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
2SK2865(TE16L1,NQ) 2SK2865.pdf
2SK2865(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 2A PW-MOLD
товар відсутній
2SK2866(F) 2SK2866.pdf
2SK2866(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
товар відсутній
2SK2883(TE24L,Q) 2SK2883.pdf
2SK2883(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 3A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
2SK2884(Q) 2SK2884%20Rev2009.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 5A TO220FL
товар відсутній
2SK2884(SM,Q) 2SK2884%20Rev2009.pdf
2SK2884(SM,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 5A TO220SM
товар відсутній
2SK2884(TE24L,Q) 2SK2884%20Rev2009.pdf
2SK2884(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 5A TO220SM
товар відсутній
2SK2889(Q) 2SK2889.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220FL
товар відсутній
2SK2949(TE24L,Q) 2SK2949.pdf
2SK2949(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 400V 10A TO220SM
товар відсутній
2SK2991(Q) 2SK2991DS.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220FL
товар відсутній
2SK2991(SM,Q) 2SK2991DS.pdf
2SK2991(SM,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SM
товар відсутній
2SK2993(Q) 2SK2993.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A TO220FL
товар відсутній
2SK3313(Q) 2SK3313_DS.pdf
2SK3313(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 10 V
товар відсутній
2SK3342(TE16L1,NQ) 2SK3342.pdf
2SK3342(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 4.5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
товар відсутній
2SK3387(TE24L,Q) 2SK3387.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 18A SC-97
товар відсутній
2SK3388(TE24L,Q) 2SK3388.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 20A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 10 V
товар відсутній
2SK3399(Q) 2SK3399.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220FL
товар відсутній
2SK3403(Q) 2SK3403.pdf
2SK3403(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 450V 13A TO220FL
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
2SK3437(Q) 2SK3437.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220FL
товар відсутній
2SK3444(TE24L,Q) docget.jsp?did=15860&prodName=2SK3444
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 25A SC-97
товар відсутній
2SK3462(TE16L1,NQ) 2SK3462.pdf
2SK3462(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 267 pF @ 10 V
товар відсутній
2SK3466(TE24L,Q) 2SK3466.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A 4TFP
Packaging: Tape & Reel (TR)
Package / Case: SC-97
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 4-TFP (9.2x9.2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
товар відсутній
2SK3662(F) Mosfets_Prod_Guide.pdf
2SK3662(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 35A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V
товар відсутній
2SK3667(Q) docget.jsp?did=1771&prodName=2SK3667
2SK3667(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7.5A TO220SIS
товар відсутній
2SK3669(TE16L1,NQ) docget.jsp?did=755&prodName=2SK3669
2SK3669(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 10A PW-MOLD
товар відсутній
2SK3700(F) Mosfets_Prod_Guide.pdf
2SK3700(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 5A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+157.82 грн
10+ 126.03 грн
25+ 121.96 грн
100+ 94.17 грн
Мінімальне замовлення: 2
2SK3798(Q,M) docget.jsp?type=datasheet&lang=en&pid=2SK3798
2SK3798(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 4A TO220SIS
товар відсутній
2SK3799(Q) docget.jsp?did=2256&prodName=2SK3799
2SK3799(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 8A TO220SIS
товар відсутній
2SK3842(TE24L,Q) docget.jsp?did=996&prodName=2SK3842
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 75A SC-97
товар відсутній
2SK3844(Q) 2SK3844.pdf
2SK3844(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 45A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12400 pF @ 10 V
товар відсутній
2SK3845(Q) docget.jsp?did=998&prodName=2SK3845
2SK3845(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A TO-3PN
товар відсутній
2SK3863(TE16L1,Q) 2SK3863.pdf
2SK3863(TE16L1,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A DP
товар відсутній
2SK3868(Q,M) 2SK3868.pdf
2SK3868(Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 5A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
товар відсутній
2SK3879(TE24L,Q) 2SK3879.pdf
2SK3879(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6.5A TO220SM
товар відсутній
2SK3906(Q) 2SK3906.pdf
2SK3906(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 25 V
товар відсутній
2SK3907(Q) 2SK3907.pdf
2SK3907(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 23A TO-3PN
товар відсутній
2SK3936(Q) 2SK3936.pdf
2SK3936(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 23A TO-3PN
товар відсутній
2SK3940(Q) Mosfets_Prod_Guide.pdf
2SK3940(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 70A TO-3PN
товар відсутній
2SK4015(Q) 2SK4015.pdf
2SK4015(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO-220SIS
товар відсутній
2SK4016(Q) 2SK4016.pdf
2SK4016(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 13A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
товар відсутній
2SK4017(Q) Mosfets_Prod_Guide.pdf
2SK4017(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
товар відсутній
2SK4021(Q) 2SK4021.pdf
2SK4021(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 4.5A PW-MOLD2
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
товар відсутній
2SK4034(TE24L,Q) 2SK4034.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 75A SC-97
товар відсутній
30FWJ2C48M(Q) 30FWJ2C48M,U30FWJ2C48M.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 30V TO220FL
товар відсутній
30JL2C41(F) docget.jsp?pid=30JL2C41&lang=en&type=datasheet
30JL2C41(F)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 600V 30A TO3P
товар відсутній
CMZM16(TE12N,Q)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 16V 1W MFLAT
товар відсутній
CRF03(TE85L,Q,M) docget.jsp?did=1574&prodName=CRF03
CRF03(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 700MA SFLAT
товар відсутній
CRY91(TE85L,Q,M) docget.jsp?type=datasheet&lang=en&pid=CRY62
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ZENER 9.1V 700MW SFLAT
товар відсутній
GT10G131(TE12L,Q) GT10G131.pdf
GT10G131(TE12L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 400V 1W 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
Supplier Device Package: 8-SOP (5.5x6.0)
Td (on/off) @ 25°C: 3.1µs/2µs
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 1 W
товар відсутній
GT10J312(Q) GT10J312.pdf
GT10J312(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 10A 60W TO220SM
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 60 W
товар відсутній
GT60N321(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 1000V 60A 170W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.5 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 330ns/700ns
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 170 W
товар відсутній
GT30J121(Q) docget.jsp?did=16680&prodName=GT30J121
GT30J121(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 30A 170W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Supplier Device Package: TO-3P(N)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1mJ (on), 800µJ (off)
Test Condition: 300V, 30A, 24Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 170 W
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+232.47 грн
10+ 200.79 грн
25+ 189.79 грн
100+ 154.37 грн
Мінімальне замовлення: 2
GT30J324(Q) docget.jsp?did=16689&prodName=GT30J324
GT30J324(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 30A 170W TO3PN
товар відсутній
GT50J121(Q)
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A 240W TO3P LH
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Supplier Device Package: TO-3P(LH)
Td (on/off) @ 25°C: 90ns/300ns
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Test Condition: 300V, 50A, 13Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 240 W
товар відсутній
GT60M303(Q) docget.jsp?did=16726&prodName=GT60M303
Виробник: Toshiba Semiconductor and Storage
Description: IGBT 900V 60A 170W TO3P LH
товар відсутній
MP4020(F) MP4020.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 4NPN DARL 60V 2A 10SIP
товар відсутній
MP4411(Q) MP4411.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 4N-CH 100V 3A 12-SIP
товар відсутній
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