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S70M GeneSiC Semiconductor s70k.pdf Rectifier Diode Switching 1KV 70A 2-Pin DO-5
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FR70J05 GeneSiC Semiconductor fr70b05.pdf Diode Switching 600V 70A 2-Pin DO-5
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S70JR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 600V 70A 2-Pin DO-5
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S70DR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 200V 70A 2-Pin DO-5
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S70V GeneSiC Semiconductor s70vr.pdf Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
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S70BR GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 100V 70A 2-Pin DO-5
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S70B GeneSiC Semiconductor s70g.pdf Rectifier Diode Switching 100V 70A 2-Pin DO-5
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MBR6040R GeneSiC Semiconductor 36162614700956272mbr6020_thru_mbr6040r.pdf Rectifier Diode Schottky 40V 60A 2-Pin DO-5
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G3R20MT12K G3R20MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571AC80C7&compId=G3R20MT12K.pdf?ci_sign=24c5cc08cfe874c5b61f676ade8dcc0043159f11 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
1+2431.76 грн
2+2134.60 грн
10+2081.57 грн
30+2052.28 грн
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G3R30MT12K G3R30MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B2C0C7&compId=G3R30MT12K.pdf?ci_sign=417d67b664418281382a923165baa7b388c1663a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
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G3R40MT12K G3R40MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E540C7&compId=G3R40MT12K.pdf?ci_sign=d330f694272859cc9115703241ced6feb09b3bf0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
1+1113.17 грн
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G3R75MT12K G3R75MT12K GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEF60C7&compId=G3R75MT12K.pdf?ci_sign=4ade885997dd7890cf368c2735032911b1ba9f38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 461 шт:
термін постачання 21-30 дні (днів)
1+600.91 грн
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G2R1000MT17J G2R1000MT17J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5006EA960C7&compId=G2R1000MT17J.pdf?ci_sign=9f1568725f74f7b947922ae5bebc5e8f409c5571 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Case: TO263-7
Kind of channel: enhancement
Technology: G2R™; SiC
на замовлення 188 шт:
термін постачання 21-30 дні (днів)
1+434.70 грн
3+358.54 грн
7+350.62 грн
10+337.17 грн
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G3R20MT12N G3R20MT12N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571ADC0C7&compId=G3R20MT12N.pdf?ci_sign=867d61cd446a78630c72e74f61a8649267248476 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
1+3761.43 грн
100+3358.21 грн
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G3R20MT17N G3R20MT17N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B040C7&compId=G3R20MT17N.pdf?ci_sign=afc1eeace1efd0fdabc1ddaf96306901c2848764 Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+8242.25 грн
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G3R75MT12D G3R75MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793EB80C7&compId=G3R75MT12D.pdf?ci_sign=15ac56251724ba4e0af9a71a5fc5a4fda96229ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
1+708.31 грн
4+641.88 грн
10+617.35 грн
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GD02MPS12E GD02MPS12E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6E40C7&compId=GD02MPS12E.pdf?ci_sign=35f99afe0f7cc4f7f81495afcfd21ad04d45fadd Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
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GB01SLT12-252 GB01SLT12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793F200C7&compId=GB01SLT12-252.pdf?ci_sign=3f8bd99f926ff4342ef6ac1189e760174984f563 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 1A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
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GB02SLT12-252 GB02SLT12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1C2A0C7&compId=GB02SLT12-252.pdf?ci_sign=735707e6339eeaaa7c2480d77ead93404157f8fe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
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GC05MPS12-252 GC05MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778BAE0C7&compId=GC05MPS12-252.pdf?ci_sign=1244ebf80f49eec2e95eb1a36754093090b0ef8f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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GC08MPS12-252 GC08MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D480C7&compId=GC08MPS12-252.pdf?ci_sign=7bd27eb2a318d5ff13acac126c512bd7e6afa233 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 60A
Kind of package: reel; tape
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GC10MPS12-252 GC10MPS12-252 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D740C7&compId=GC10MPS12-252.pdf?ci_sign=831fa413bb78ef0fd5d403c7ff076878496d51ca Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
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GD10MPS12E GeneSiC SEMICONDUCTOR GD10MPS12E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 18A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.9V
Max. forward impulse current: 64A
Kind of package: reel; tape
Max. load current: 33A
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GE04MPS06E GeneSiC SEMICONDUCTOR GE04MPS06E.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.75V
Max. forward impulse current: 22A
Kind of package: reel; tape
Max. load current: 11A
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GE06MPS06E GE06MPS06E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E8A0C7&compId=GE06MPS06E.pdf?ci_sign=b9d56ecc1d522c59d92d3ddf7cdc04261d57ca19 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
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GE08MPS06E GE08MPS06E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F711291E40C7&compId=GE08MPS06E.pdf?ci_sign=957031edcd4d7dc3fb58511501e4b979b8d996c4 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Kind of package: reel; tape
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GE10MPS06E GE10MPS06E GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F7D2B0E1A0C7&compId=GE10MPS06E.pdf?ci_sign=c5b7c131c2664c7e3bcbb0c939f5acf31b45bf7d Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Kind of package: reel; tape
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GC02MPS12-220 GC02MPS12-220 GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B9A0C7&compId=GC02MPS12-220.pdf?ci_sign=5b7cd32c33a073a9b17522300153aa93377d3d17 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 2A
Max. forward impulse current: 16A
Max. off-state voltage: 1.2kV
Case: TO220-2
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
5+85.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
G3R350MT12D G3R350MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B400C7&compId=G3R350MT12D.pdf?ci_sign=b08bdf2e36df35986c19da23f6988a87e11ba7b7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
на замовлення 374 шт:
термін постачання 21-30 дні (днів)
2+277.01 грн
Мінімальне замовлення: 2
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GD20MPS12H GD20MPS12H GeneSiC SEMICONDUCTOR GD20MPS12H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
на замовлення 545 шт:
термін постачання 21-30 дні (днів)
1+483.28 грн
3+417.90 грн
7+394.94 грн
30+386.24 грн
120+379.91 грн
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GD10MPS12H GeneSiC SEMICONDUCTOR GD10MPS12H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
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GD2X100MPS06N GD2X100MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+3394.07 грн
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GD2X30MPS06N GD2X30MPS06N GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55 Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1512.93 грн
В кошику  од. на суму  грн.
GD20MPS12A GD20MPS12A GeneSiC SEMICONDUCTOR GD20MPS12A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
на замовлення 1107 шт:
термін постачання 21-30 дні (днів)
2+410.83 грн
4+303.13 грн
9+286.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
G3R450MT17D G3R450MT17D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E680C7&compId=G3R450MT17D.pdf?ci_sign=623c2d7bc68ab7ce63fe93b60466746ffbe3ca5f Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
на замовлення 407 шт:
термін постачання 21-30 дні (днів)
1+487.55 грн
3+355.37 грн
8+336.38 грн
В кошику  од. на суму  грн.
G3R450MT17J G3R450MT17J GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E7C0C7&compId=G3R450MT17J.pdf?ci_sign=fb6f69167c3c5663eef111d5bcd6739f8e8e0312 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
на замовлення 841 шт:
термін постачання 21-30 дні (днів)
1+460.27 грн
В кошику  од. на суму  грн.
G3R40MT12D G3R40MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1B0A0C7&compId=G3R40MT12D.pdf?ci_sign=80928ea7e4b37e0193cc95578c620c2ccb46972c Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
на замовлення 671 шт:
термін постачання 21-30 дні (днів)
1+1105.50 грн
3+970.34 грн
30+933.14 грн
В кошику  од. на суму  грн.
G3R160MT12D G3R160MT12D GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3060C7&compId=G3R160MT12D.pdf?ci_sign=086ae24aaa3e50a514892fe6bd224ecc7bfc54d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
на замовлення 845 шт:
термін постачання 21-30 дні (днів)
1+440.67 грн
3+378.32 грн
7+368.83 грн
30+355.37 грн
В кошику  од. на суму  грн.
GD30MPS06H GD30MPS06H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E4E0C7&compId=GD30MPS06H.pdf?ci_sign=bc0db00698f6eb923b7417426a9d9ec5d86880bb Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
2+398.90 грн
7+353.79 грн
30+340.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GD10MPS17H GD10MPS17H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F720C7&compId=GD10MPS17H.pdf?ci_sign=b05d9cf7c1fa201ac9405cf96058e406639b928a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
на замовлення 361 шт:
термін постачання 21-30 дні (днів)
1+553.18 грн
3+455.89 грн
6+431.35 грн
120+414.73 грн
В кошику  од. на суму  грн.
GD15MPS17H GD15MPS17H GeneSiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B12914258020D2&compId=GD15MPS17H.pdf?ci_sign=14d1367c5878ff582f81892e248f6526f04652cf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
на замовлення 458 шт:
термін постачання 21-30 дні (днів)
1+696.37 грн
В кошику  од. на суму  грн.
S70M s70k.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 1KV 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
FR70J05 fr70b05.pdf
Виробник: GeneSiC Semiconductor
Diode Switching 600V 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
S70JR s70g.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 600V 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
S70DR s70g.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 200V 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
S70V s70vr.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 1.4KV 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
S70BR s70g.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
S70B s70g.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Switching 100V 70A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
MBR6040R 36162614700956272mbr6020_thru_mbr6040r.pdf
Виробник: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 60A 2-Pin DO-5
товару немає в наявності
В кошику  од. на суму  грн.
G3R20MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571AC80C7&compId=G3R20MT12K.pdf?ci_sign=24c5cc08cfe874c5b61f676ade8dcc0043159f11
G3R20MT12K
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 219nC
On-state resistance: 20mΩ
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 542W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2431.76 грн
2+2134.60 грн
10+2081.57 грн
30+2052.28 грн
В кошику  од. на суму  грн.
G3R30MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B2C0C7&compId=G3R30MT12K.pdf?ci_sign=417d67b664418281382a923165baa7b388c1663a
G3R30MT12K
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 155nC
On-state resistance: 30mΩ
Drain current: 63A
Pulsed drain current: 200A
Power dissipation: 400W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
товару немає в наявності
В кошику  од. на суму  грн.
G3R40MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E540C7&compId=G3R40MT12K.pdf?ci_sign=d330f694272859cc9115703241ced6feb09b3bf0
G3R40MT12K
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 106nC
On-state resistance: 40mΩ
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1113.17 грн
В кошику  од. на суму  грн.
G3R75MT12K pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6421FEF60C7&compId=G3R75MT12K.pdf?ci_sign=4ade885997dd7890cf368c2735032911b1ba9f38
G3R75MT12K
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 54nC
On-state resistance: 75mΩ
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247-4
на замовлення 461 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+600.91 грн
В кошику  од. на суму  грн.
G2R1000MT17J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5006EA960C7&compId=G2R1000MT17J.pdf?ci_sign=9f1568725f74f7b947922ae5bebc5e8f409c5571
G2R1000MT17J
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 54W; TO263-7
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
On-state resistance: 1Ω
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 54W
Drain-source voltage: 1.7kV
Case: TO263-7
Kind of channel: enhancement
Technology: G2R™; SiC
на замовлення 188 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+434.70 грн
3+358.54 грн
7+350.62 грн
10+337.17 грн
В кошику  од. на суму  грн.
G3R20MT12N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571ADC0C7&compId=G3R20MT12N.pdf?ci_sign=867d61cd446a78630c72e74f61a8649267248476
G3R20MT12N
Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 74A; SOT227B; screw; Idm: 240A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 74A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 240A
Power dissipation: 365W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3761.43 грн
100+3358.21 грн
В кошику  од. на суму  грн.
G3R20MT17N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B040C7&compId=G3R20MT17N.pdf?ci_sign=afc1eeace1efd0fdabc1ddaf96306901c2848764
G3R20MT17N
Виробник: GeneSiC SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 70A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 70A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 300A
Power dissipation: 523W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Mechanical mounting: screw
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+8242.25 грн
В кошику  од. на суму  грн.
G3R75MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793EB80C7&compId=G3R75MT12D.pdf?ci_sign=15ac56251724ba4e0af9a71a5fc5a4fda96229ad
G3R75MT12D
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
Case: TO247-3
On-state resistance: 75mΩ
Pulsed drain current: 80A
Power dissipation: 207W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 54nC
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+708.31 грн
4+641.88 грн
10+617.35 грн
В кошику  од. на суму  грн.
GD02MPS12E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6DAEE6E40C7&compId=GD02MPS12E.pdf?ci_sign=35f99afe0f7cc4f7f81495afcfd21ad04d45fadd
GD02MPS12E
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GB01SLT12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793F200C7&compId=GB01SLT12-252.pdf?ci_sign=3f8bd99f926ff4342ef6ac1189e760174984f563
GB01SLT12-252
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 1A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GB02SLT12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1C2A0C7&compId=GB02SLT12-252.pdf?ci_sign=735707e6339eeaaa7c2480d77ead93404157f8fe
GB02SLT12-252
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GC05MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778BAE0C7&compId=GC05MPS12-252.pdf?ci_sign=1244ebf80f49eec2e95eb1a36754093090b0ef8f
GC05MPS12-252
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GC08MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D480C7&compId=GC08MPS12-252.pdf?ci_sign=7bd27eb2a318d5ff13acac126c512bd7e6afa233
GC08MPS12-252
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 60A
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
GC10MPS12-252 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6A750D740C7&compId=GC10MPS12-252.pdf?ci_sign=831fa413bb78ef0fd5d403c7ff076878496d51ca
GC10MPS12-252
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
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GD10MPS12E GD10MPS12E.pdf
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 18A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 18A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.9V
Max. forward impulse current: 64A
Kind of package: reel; tape
Max. load current: 33A
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GE04MPS06E GE04MPS06E.pdf
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.75V
Max. forward impulse current: 22A
Kind of package: reel; tape
Max. load current: 11A
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GE06MPS06E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E8A0C7&compId=GE06MPS06E.pdf?ci_sign=b9d56ecc1d522c59d92d3ddf7cdc04261d57ca19
GE06MPS06E
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
GE08MPS06E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F711291E40C7&compId=GE08MPS06E.pdf?ci_sign=957031edcd4d7dc3fb58511501e4b979b8d996c4
GE08MPS06E
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
GE10MPS06E pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F7D2B0E1A0C7&compId=GE10MPS06E.pdf?ci_sign=c5b7c131c2664c7e3bcbb0c939f5acf31b45bf7d
GE10MPS06E
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
GC02MPS12-220 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F6B778B9A0C7&compId=GC02MPS12-220.pdf?ci_sign=5b7cd32c33a073a9b17522300153aa93377d3d17
GC02MPS12-220
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 2A
Max. forward impulse current: 16A
Max. off-state voltage: 1.2kV
Case: TO220-2
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
G3R350MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F54571B400C7&compId=G3R350MT12D.pdf?ci_sign=b08bdf2e36df35986c19da23f6988a87e11ba7b7
G3R350MT12D
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Drain-source voltage: 1.2kV
Drain current: 8A
Case: TO247-3
On-state resistance: 0.35Ω
Pulsed drain current: 16A
Power dissipation: 74W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 12nC
на замовлення 374 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+277.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GD20MPS12H GD20MPS12H.pdf
GD20MPS12H
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 27A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
на замовлення 545 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+483.28 грн
3+417.90 грн
7+394.94 грн
30+386.24 грн
120+379.91 грн
В кошику  од. на суму  грн.
GD10MPS12H GD10MPS12H.pdf
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.9V
товару немає в наявності
В кошику  од. на суму  грн.
GD2X100MPS06N pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B0D7831F3880D2&compId=GD2X100MPS06N.pdf?ci_sign=1b2ed4d223639b685bea14afaa75997f05600f5d
GD2X100MPS06N
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.8V
Load current: 108A x2
Max. load current: 231A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 650V
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3394.07 грн
В кошику  од. на суму  грн.
GD2X30MPS06N pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F860C7&compId=GD2X30MPS06N.pdf?ci_sign=efe1bfcbb3de999f478691de546827d7c91eaa55
GD2X30MPS06N
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Features of semiconductor devices: MPS
Kind of package: tube
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Technology: SiC
Reverse recovery time: 10ns
Max. forward voltage: 1.5V
Load current: 30A x2
Max. load current: 60A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 650V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1512.93 грн
В кошику  од. на суму  грн.
GD20MPS12A GD20MPS12A.pdf
GD20MPS12A
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 29A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.9V
Max. forward impulse current: 128A
Kind of package: tube
Max. load current: 67A
Features of semiconductor devices: MPS
на замовлення 1107 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+410.83 грн
4+303.13 грн
9+286.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
G3R450MT17D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E680C7&compId=G3R450MT17D.pdf?ci_sign=623c2d7bc68ab7ce63fe93b60466746ffbe3ca5f
G3R450MT17D
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Drain-source voltage: 1.7kV
Case: TO247-3
на замовлення 407 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+487.55 грн
3+355.37 грн
8+336.38 грн
В кошику  од. на суму  грн.
G3R450MT17J pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F5E793E7C0C7&compId=G3R450MT17J.pdf?ci_sign=fb6f69167c3c5663eef111d5bcd6739f8e8e0312
G3R450MT17J
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 91W
Kind of package: tube
Kind of channel: enhancement
Technology: G3R™; SiC
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 18nC
On-state resistance: 0.45Ω
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 91W
Drain-source voltage: 1.7kV
Case: TO263-7
на замовлення 841 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+460.27 грн
В кошику  од. на суму  грн.
G3R40MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F604D1B0A0C7&compId=G3R40MT12D.pdf?ci_sign=80928ea7e4b37e0193cc95578c620c2ccb46972c
G3R40MT12D
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
Case: TO247-3
On-state resistance: 40mΩ
Pulsed drain current: 140A
Power dissipation: 333W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 106nC
на замовлення 671 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1105.50 грн
3+970.34 грн
30+933.14 грн
В кошику  од. на суму  грн.
G3R160MT12D pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F57F1B3060C7&compId=G3R160MT12D.pdf?ci_sign=086ae24aaa3e50a514892fe6bd224ecc7bfc54d3
G3R160MT12D
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 40A; 123W
Drain-source voltage: 1.2kV
Drain current: 16A
Case: TO247-3
On-state resistance: 0.16Ω
Pulsed drain current: 40A
Power dissipation: 123W
Technology: G3R™; SiC
Gate-source voltage: -5...15V
Kind of package: tube
Mounting: THT
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 28nC
на замовлення 845 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+440.67 грн
3+378.32 грн
7+368.83 грн
30+355.37 грн
В кошику  од. на суму  грн.
GD30MPS06H pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F77752E4E0C7&compId=GD30MPS06H.pdf?ci_sign=bc0db00698f6eb923b7417426a9d9ec5d86880bb
GD30MPS06H
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Kind of package: tube
Features of semiconductor devices: MPS
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+398.90 грн
7+353.79 грн
30+340.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GD10MPS17H pVersion=0046&contRep=ZT&docId=005056AB90B41EDB87B5F71CC1F720C7&compId=GD10MPS17H.pdf?ci_sign=b05d9cf7c1fa201ac9405cf96058e406639b928a
GD10MPS17H
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 42A
Features of semiconductor devices: MPS
на замовлення 361 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+553.18 грн
3+455.89 грн
6+431.35 грн
120+414.73 грн
В кошику  од. на суму  грн.
GD15MPS17H pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84B12914258020D2&compId=GD15MPS17H.pdf?ci_sign=14d1367c5878ff582f81892e248f6526f04652cf
GD15MPS17H
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.7kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 120A
Kind of package: tube
Max. load current: 63A
Features of semiconductor devices: MPS
на замовлення 458 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+696.37 грн
В кошику  од. на суму  грн.
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