Продукція > GOFORD SEMICONDUCTOR > Всі товари виробника GOFORD SEMICONDUCTOR (1374) > Сторінка 22 з 23
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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GT130N10D3 | Goford Semiconductor |
 Description: MOSFET N-CH 100V 52A DFN3*3-8LPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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GT130N10D3 | Goford Semiconductor |
Description: MOSFET N-CH 100V 52A DFN3*3-8L Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V |
на замовлення 2860 шт: термін постачання 21-31 дні (днів) |
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| GT130N10D3 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 52A; 71W; DFN3x3-8 Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 71W Case: DFN3x3-8 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 18nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GT130N10D3 | Goford Semiconductor |
Description: MOSFET N-CH 100V 52A DFN3*3-8L Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| GT130N10F | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 45A; 41.7W; TO220F Type of transistor: N-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 41.7W Case: TO220F Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 18nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GT130N10F | GOFORD Semiconductor |
GT130N10F |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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GT130N10F | Goford Semiconductor |
Description: MOSFET N-CH 100V 45A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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GT130N10F | Goford Semiconductor |
Description: MOSFET N-CH 100V 45A 41.7W 12m( Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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GT130N10K | Goford Semiconductor |
Description: MOSFET N-CH 100V 60A 73.5W TO-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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GT130N10K | Goford Semiconductor |
Description: MOSFET N-CH 100V 60A 73.5W TO-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V |
на замовлення 2324 шт: термін постачання 21-31 дні (днів) |
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GT130N10M | Goford Semiconductor |
Description: MOSFET N-CH 100V 60A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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GT130N10M | Goford Semiconductor |
Description: MOSFET N-CH 100V 60A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT130N20M | Goford Semiconductor |
Description: MOSFET N-CH 200V 90A 250W TO-263 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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GT130N20M | Goford Semiconductor |
Description: MOSFET N-CH 200V 90A 250W TO-263 |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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GT130N20TL | Goford Semiconductor |
Description: MOSFET,N-CH,200V,95A,330W,TOLL-8 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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GT130N20TL | Goford Semiconductor |
Description: MOSFET,N-CH,200V,95A,330W,TOLL-8 |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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GT150N12T | Goford Semiconductor |
Description: MOSFET N-CH 120V 55A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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GT150N12T | Goford Semiconductor |
Description: MOSFET N-CH 120V 55A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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GT150N12T | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 55A; 96W; TO220 Case: TO220 Technology: SGT Drain current: 55A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Mounting: THT Power dissipation: 96W Gate charge: 25nC Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GT150N12T | GOFORD Semiconductor |
GT150N12T |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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GT180N12K | Goford Semiconductor |
Description: MOSFET N-CH 120V 70A 100W 10M(M Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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GT180N12K | Goford Semiconductor |
Description: MOSFET N-CH 120V 70A 100W 10M(M Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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GT180N12M | Goford Semiconductor |
Description: MOSFET N-CH 120V 55A 96W 17m(max Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT180N12M | Goford Semiconductor |
Description: MOSFET N-CH 120V 55A 96W TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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GT180N12M | Goford Semiconductor |
Description: MOSFET N-CH 120V 55A 96W TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V |
на замовлення 790 шт: термін постачання 21-31 дні (днів) |
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| GT180P08T | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT180P08T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220 Type of transistor: P-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: -80V Drain current: -89A Power dissipation: 245W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 103nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GT1K2N10I | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.3A Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Gate charge: 4.2nC Kind of channel: enhancement Technology: SGT Power dissipation: 1.6W |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| GT1K2P15M | GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| GT1K2P15M | GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| GT250P10M | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| GT250P10T | GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| GT250P10T | GOFORD Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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GT250P10T | Goford Semiconductor |
Description: MOSFET P-CH 100V 56A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 173.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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GT250P10T | Goford Semiconductor |
Description: MOSFET P-CH 100V 56A 173.6W 30m( Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 173.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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GT2K0P20K | Goford Semiconductor |
Description: MOSFET P-CH 200V 18A Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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GT2K0P20K | Goford Semiconductor |
Description: MOSFET P-CH 200V 18A Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V Power Dissipation (Max): 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
на замовлення 1817 шт: термін постачання 21-31 дні (днів) |
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GT2K0P20K | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -18A; 138W; TO252 Mounting: SMD Gate-source voltage: ±20V Case: TO252 Power dissipation: 138W Gate charge: 70nC Polarisation: unipolar Technology: SGT Drain current: -18A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GT2K0P20K | GOFORD Semiconductor |
GT2K0P20K |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| GT2K0P20M | GOFORD Semiconductor | GT2K0P20M |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| GT2K0P20M | GOFORD Semiconductor | GT2K0P20M |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| GT2K0P20T | GOFORD Semiconductor | GT2K0P20T |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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GT2K0P20T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220 Type of transistor: P-MOSFET Mounting: THT Power dissipation: 138W Gate charge: 70nC Polarisation: unipolar Technology: SGT Drain current: -19A Kind of channel: enhancement Drain-source voltage: -200V Gate-source voltage: ±20V Case: TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GT2K6P15K | Goford Semiconductor |
Description: MOSFET P-CH 150V 11A TO-252-3 |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
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| GT2K6P15K | GOFORD Semiconductor |
GT2K6P15K |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| GT2K6P15K | GOFORD Semiconductor |
GT2K6P15K |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GT2K6P15K | Goford Semiconductor |
Description: MOSFET P-CH 150V 11A TO-252-3 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| GT2K6P15S | GOFORD Semiconductor | GT2K6P15S |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| GT2K6P15S | GOFORD Semiconductor | GT2K6P15S |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| GT2K6P15T | GOFORD Semiconductor | GT2K6P15T |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| GT2K6P15T | GOFORD Semiconductor | GT2K6P15T |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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GT400P10K | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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GT400P10K | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V |
на замовлення 1610 шт: термін постачання 21-31 дні (днів) |
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GT400P10K | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| GT400P10K | GOFORD Semiconductor |
GT400P10K |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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GT400P10M | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| GT400P10M | GOFORD Semiconductor |
GT400P10M |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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GT400P10M | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT400P10M | Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT400P10T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO220 Mounting: THT Power dissipation: 106W Gate charge: 46nC Polarisation: unipolar Technology: SGT Drain current: -35A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TO220 |
товару немає в наявності |
В кошику од. на суму грн. |
| GT130N10D3 |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| GT130N10D3 |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
на замовлення 2860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.02 грн |
| 10+ | 62.75 грн |
| 100+ | 41.78 грн |
| 500+ | 30.77 грн |
| 1000+ | 28.05 грн |
| GT130N10D3 |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 52A; 71W; DFN3x3-8
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 52A; 71W; DFN3x3-8
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
товару немає в наявності
В кошику
од. на суму грн.
| GT130N10D3 |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.49 грн |
| GT130N10F |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 45A; 41.7W; TO220F
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 41.7W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 45A; 41.7W; TO220F
Type of transistor: N-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 41.7W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
товару немає в наявності
В кошику
од. на суму грн.
| GT130N10F |
|
Виробник: GOFORD Semiconductor
GT130N10F
GT130N10F
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 413+ | 35.77 грн |
| GT130N10F |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 45A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
Description: MOSFET N-CH 100V 45A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.20 грн |
| GT130N10F |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 45A 41.7W 12m(
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
Description: MOSFET N-CH 100V 45A 41.7W 12m(
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 25.94 грн |
| GT130N10K |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GT130N10K |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
на замовлення 2324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.02 грн |
| 10+ | 65.14 грн |
| 100+ | 43.34 грн |
| 500+ | 31.87 грн |
| 1000+ | 29.04 грн |
| GT130N10M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
Description: MOSFET N-CH 100V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.37 грн |
| 10+ | 81.98 грн |
| GT130N10M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
Description: MOSFET N-CH 100V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 42.61 грн |
| GT130N20M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 200V 90A 250W TO-263
Description: MOSFET N-CH 200V 90A 250W TO-263
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GT130N20M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 200V 90A 250W TO-263
Description: MOSFET N-CH 200V 90A 250W TO-263
на замовлення 248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.07 грн |
| 10+ | 195.80 грн |
| 50+ | 151.90 грн |
| 100+ | 129.30 грн |
| GT130N20TL |
|
Виробник: Goford Semiconductor
Description: MOSFET,N-CH,200V,95A,330W,TOLL-8
Description: MOSFET,N-CH,200V,95A,330W,TOLL-8
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| GT130N20TL |
|
Виробник: Goford Semiconductor
Description: MOSFET,N-CH,200V,95A,330W,TOLL-8
Description: MOSFET,N-CH,200V,95A,330W,TOLL-8
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 325.04 грн |
| 10+ | 206.41 грн |
| 50+ | 160.53 грн |
| 100+ | 136.77 грн |
| GT150N12T |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 29.49 грн |
| GT150N12T |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.04 грн |
| 10+ | 71.67 грн |
| 100+ | 55.72 грн |
| GT150N12T |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 55A; 96W; TO220
Case: TO220
Technology: SGT
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: THT
Power dissipation: 96W
Gate charge: 25nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 55A; 96W; TO220
Case: TO220
Technology: SGT
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: THT
Power dissipation: 96W
Gate charge: 25nC
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| GT150N12T |
|
Виробник: GOFORD Semiconductor
GT150N12T
GT150N12T
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 375+ | 39.31 грн |
| GT180N12K |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GT180N12K |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.22 грн |
| 10+ | 64.68 грн |
| 100+ | 43.14 грн |
| 500+ | 31.81 грн |
| 1000+ | 29.01 грн |
| GT180N12M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 55A 96W 17m(max
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
Description: MOSFET N-CH 120V 55A 96W 17m(max
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 27.26 грн |
| GT180N12M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| GT180N12M |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.98 грн |
| 10+ | 77.21 грн |
| 100+ | 51.76 грн |
| GT180P08T |
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 220+ | 67.13 грн |
| GT180P08T |
Виробник: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -89A
Power dissipation: 245W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -89A
Power dissipation: 245W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| GT1K2N10I |
Виробник: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 4.2nC
Kind of channel: enhancement
Technology: SGT
Power dissipation: 1.6W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.3A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 4.2nC
Kind of channel: enhancement
Technology: SGT
Power dissipation: 1.6W
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.66 грн |
| 11+ | 41.10 грн |
| 25+ | 22.05 грн |
| 100+ | 9.51 грн |
| 500+ | 5.71 грн |
| 1000+ | 4.94 грн |
| 3000+ | 4.21 грн |
| GT1K2P15M |
|
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 303+ | 48.80 грн |
| GT1K2P15M |
|
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 48.55 грн |
| GT250P10M |
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 75.58 грн |
| GT250P10T |
|
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 67.62 грн |
| GT250P10T |
|
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 72.14 грн |
| GT250P10T |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 56A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
Description: MOSFET P-CH 100V 56A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.27 грн |
| 50+ | 90.04 грн |
| GT250P10T |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 56A 173.6W 30m(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
Description: MOSFET P-CH 100V 56A 173.6W 30m(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 49.72 грн |
| GT2K0P20K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 200V 18A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Description: MOSFET P-CH 200V 18A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GT2K0P20K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 200V 18A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Description: MOSFET P-CH 200V 18A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
на замовлення 1817 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.96 грн |
| 10+ | 84.90 грн |
| 50+ | 63.89 грн |
| 100+ | 53.57 грн |
| 500+ | 42.38 грн |
| GT2K0P20K |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -18A; 138W; TO252
Mounting: SMD
Gate-source voltage: ±20V
Case: TO252
Power dissipation: 138W
Gate charge: 70nC
Polarisation: unipolar
Technology: SGT
Drain current: -18A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -18A; 138W; TO252
Mounting: SMD
Gate-source voltage: ±20V
Case: TO252
Power dissipation: 138W
Gate charge: 70nC
Polarisation: unipolar
Technology: SGT
Drain current: -18A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| GT2K0P20K |
|
Виробник: GOFORD Semiconductor
GT2K0P20K
GT2K0P20K
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.28 грн |
| GT2K0P20M |
Виробник: GOFORD Semiconductor
GT2K0P20M
GT2K0P20M
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 33.02 грн |
| GT2K0P20M |
Виробник: GOFORD Semiconductor
GT2K0P20M
GT2K0P20M
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 39.61 грн |
| GT2K0P20T |
Виробник: GOFORD Semiconductor
GT2K0P20T
GT2K0P20T
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 47.47 грн |
| GT2K0P20T |
Виробник: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220
Type of transistor: P-MOSFET
Mounting: THT
Power dissipation: 138W
Gate charge: 70nC
Polarisation: unipolar
Technology: SGT
Drain current: -19A
Kind of channel: enhancement
Drain-source voltage: -200V
Gate-source voltage: ±20V
Case: TO220
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -200V; -19A; 138W; TO220
Type of transistor: P-MOSFET
Mounting: THT
Power dissipation: 138W
Gate charge: 70nC
Polarisation: unipolar
Technology: SGT
Drain current: -19A
Kind of channel: enhancement
Drain-source voltage: -200V
Gate-source voltage: ±20V
Case: TO220
товару немає в наявності
В кошику
од. на суму грн.
| GT2K6P15K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 150V 11A TO-252-3
Description: MOSFET P-CH 150V 11A TO-252-3
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.05 грн |
| 10+ | 52.53 грн |
| GT2K6P15K |
|
Виробник: GOFORD Semiconductor
GT2K6P15K
GT2K6P15K
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 21.72 грн |
| GT2K6P15K |
|
Виробник: GOFORD Semiconductor
GT2K6P15K
GT2K6P15K
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 21.72 грн |
| GT2K6P15K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 150V 11A TO-252-3
Description: MOSFET P-CH 150V 11A TO-252-3
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GT2K6P15S |
Виробник: GOFORD Semiconductor
GT2K6P15S
GT2K6P15S
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 18.38 грн |
| GT2K6P15S |
Виробник: GOFORD Semiconductor
GT2K6P15S
GT2K6P15S
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 18.38 грн |
| GT2K6P15T |
Виробник: GOFORD Semiconductor
GT2K6P15T
GT2K6P15T
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 31.06 грн |
| GT2K6P15T |
Виробник: GOFORD Semiconductor
GT2K6P15T
GT2K6P15T
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 31.06 грн |
| GT400P10K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GT400P10K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
на замовлення 1610 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.20 грн |
| 10+ | 90.13 грн |
| 100+ | 70.08 грн |
| 500+ | 55.74 грн |
| 1000+ | 45.40 грн |
| GT400P10K |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 37.23 грн |
| GT400P10K |
|
Виробник: GOFORD Semiconductor
GT400P10K
GT400P10K
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 52.68 грн |
| GT400P10M |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 45.26 грн |
| GT400P10M |
|
Виробник: GOFORD Semiconductor
GT400P10M
GT400P10M
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 63.98 грн |
| GT400P10M |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 69.34 грн |
| GT400P10M |
|
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.79 грн |
| 10+ | 99.13 грн |
| 100+ | 78.91 грн |
| GT400P10T |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO220
Mounting: THT
Power dissipation: 106W
Gate charge: 46nC
Polarisation: unipolar
Technology: SGT
Drain current: -35A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TO220
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO220
Mounting: THT
Power dissipation: 106W
Gate charge: 46nC
Polarisation: unipolar
Technology: SGT
Drain current: -35A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: TO220
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