Продукція > GOFORD SEMICONDUCTOR > Всі товари виробника GOFORD SEMICONDUCTOR (830) > Сторінка 10 з 14
Фото | Назва | Виробник | Інформація |
Доступність |
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G630J | Goford Semiconductor |
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3. Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V |
на замовлення 735 шт: термін постачання 21-31 дні (днів) |
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G630J | Goford Semiconductor |
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3. Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G65P06D5 | Goford Semiconductor |
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V |
товар відсутній |
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G65P06D5 | Goford Semiconductor |
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V |
товар відсутній |
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G65P06F | Goford Semiconductor | Description: P-CH, -60V, 65A, RD(MAX)<18M@-10 |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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G65P06K | Goford Semiconductor |
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3. Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G65P06K | Goford Semiconductor |
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3. Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V FET Feature: Standard Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V |
на замовлення 8666 шт: термін постачання 21-31 дні (днів) |
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G65P06T | Goford Semiconductor |
Description: P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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G66 | Goford Semiconductor |
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G66 | Goford Semiconductor |
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V |
товар відсутній |
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G6N02L | Goford Semiconductor |
Description: MOSFET N-CH 20V 6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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G6P06 | Goford Semiconductor |
Description: P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V FET Feature: Standard Power Dissipation (Max): 4.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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G6P06 | Goford Semiconductor |
Description: P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V FET Feature: Standard Power Dissipation (Max): 4.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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G700P06D3 | Goford Semiconductor |
Description: P-60V,-18A,RD(MAX)<70M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V |
товар відсутній |
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G700P06D3 | Goford Semiconductor |
Description: P-60V,-18A,RD(MAX)<70M@-10V,VTH- Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V |
на замовлення 1590 шт: термін постачання 21-31 дні (днів) |
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G700P06D5 | Goford Semiconductor |
Description: P-60V,-25A,RD(MAX)<70M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 30 V |
товар відсутній |
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G700P06D5 | Goford Semiconductor |
Description: P-60V,-25A,RD(MAX)<70M@-10V,VTH- Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 30 V |
на замовлення 4854 шт: термін постачання 21-31 дні (днів) |
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G700P06H | Goford Semiconductor |
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V FET Feature: Standard Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V |
на замовлення 4940 шт: термін постачання 21-31 дні (днів) |
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G700P06H | Goford Semiconductor |
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V FET Feature: Standard Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G700P06J | Goford Semiconductor |
Description: P-60V,-23A,RD(MAX)<70M@-10V,VTH- Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V FET Feature: Standard Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 30 V |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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G700P06LL | Goford Semiconductor |
Description: MOSFET P-CH 60V 5A SOT-23-6L Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V FET Feature: Standard Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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G700P06T | Goford Semiconductor |
Description: MOSFET P-CH 60V 25A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G700P06T | Goford Semiconductor |
Description: P-60V,25A,RD<70M@-10V,VTH1V~-2.5 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1428 pF @ 30 V |
на замовлення 123 шт: термін постачання 21-31 дні (днів) |
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G70N04T | Goford Semiconductor |
Description: MOSFET N-CH 40V 70A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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G70P02K | Goford Semiconductor |
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)< Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V FET Feature: Standard Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G70P02K | Goford Semiconductor |
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)< Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V FET Feature: Standard Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V |
на замовлення 3509 шт: термін постачання 21-31 дні (днів) |
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G75P04D5I | Goford Semiconductor |
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6414 pF @ 20 V |
товар відсутній |
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G75P04FI | Goford Semiconductor |
Description: P-40V,-60A,RD(MAX)<7M@-10V,VTH-1 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6275 pF @ 20 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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G75P04K | Goford Semiconductor |
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V |
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G75P04K | Goford Semiconductor |
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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G75P04K | GOFORD Semiconductor | P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G75P04KI | Goford Semiconductor |
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6586 pF @ 20 V |
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G75P04S | Goford Semiconductor |
Description: MOSFET P-CH 40V 11A SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V FET Feature: Standard Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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G75P04SI | Goford Semiconductor |
Description: P-40V,-11A,RD(MAX)<8M@-10V,VTH-1 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6509 pF @ 20 V |
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G75P04TI | Goford Semiconductor |
Description: P-40V,-70A,RD(MAX)<7M@-10V,VTH-1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6407 pF @ 20 V |
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G7K2N20HE | Goford Semiconductor |
Description: MOSFET N-CH ESD 200V 2A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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G7K2N20HE | Goford Semiconductor |
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V |
на замовлення 692 шт: термін постачання 21-31 дні (днів) |
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G7K2N20HE | Goford Semiconductor |
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V |
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G7K2N20LLE | Goford Semiconductor |
Description: MOSFET N-CH ESD 200V 2A SOT-23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V FET Feature: Standard Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 100 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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G7P03D2 | Goford Semiconductor |
Description: P-30V,-7A,RD(MAX)<20.5M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 1A, 10V Power Dissipation (Max): 1.3W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
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G7P03L | Goford Semiconductor |
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
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G7P03L | GOFORD Semiconductor | P-Channel Enhancement Mode Power MOSFET |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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G7P03L | Goford Semiconductor |
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
на замовлення 3241 шт: термін постачання 21-31 дні (днів) |
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G7P03L | Goford Semiconductor |
Description: MOSFET P-CH 30V 7A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 1.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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G7P03S | GOFORD Semiconductor | P-Channel Trench MOSFET |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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G7P03S | Goford Semiconductor |
Description: MOSFET P-CH 30V 9A SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V FET Feature: Standard Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1253 pF @ 15 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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G800N06H | Goford Semiconductor |
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V |
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G800N06H | Goford Semiconductor |
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.2W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
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G800N06S2 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3912 шт: термін постачання 21-31 дні (днів) |
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G800N06S2 | Goford Semiconductor |
Description: MOSFET 2N-CH 60V 3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOP |
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G80N03K | Goford Semiconductor |
Description: N30V, 80A,RD<6.5M@10V,VTH1.0V~2. Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V |
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G80N03K | Goford Semiconductor |
Description: MOSFET N-CH 30V 80A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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G80N03K | Goford Semiconductor |
Description: N30V, 80A,RD<6.5M@10V,VTH1.0V~2. Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V |
на замовлення 2462 шт: термін постачання 21-31 дні (днів) |
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G86N06K | Goford Semiconductor |
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G86N06K | Goford Semiconductor |
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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G86N06K | Goford Semiconductor |
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G900P15D5 | Goford Semiconductor |
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V FET Feature: Standard Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75 Drain to Source Voltage (Vdss): 150 V |
товар відсутній |
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G900P15D5 | Goford Semiconductor |
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V FET Feature: Standard Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
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G900P15K | Goford Semiconductor |
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V FET Feature: Standard Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V |
товар відсутній |
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G900P15K | Goford Semiconductor |
Description: MOSFET P-CH 150V 50A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V FET Feature: Standard Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G630J |
Виробник: Goford Semiconductor
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
на замовлення 735 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.3 грн |
10+ | 51.77 грн |
100+ | 39.68 грн |
500+ | 29.43 грн |
G630J |
Виробник: Goford Semiconductor
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 19.2 грн |
G65P06D5 |
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
товар відсутній
G65P06D5 |
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
товар відсутній
G65P06F |
Виробник: Goford Semiconductor
Description: P-CH, -60V, 65A, RD(MAX)<18M@-10
Description: P-CH, -60V, 65A, RD(MAX)<18M@-10
на замовлення 135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.81 грн |
10+ | 108.1 грн |
100+ | 86.83 грн |
G65P06K |
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 38.15 грн |
5000+ | 34.99 грн |
G65P06K |
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
на замовлення 8666 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 92.31 грн |
10+ | 72.68 грн |
100+ | 56.52 грн |
500+ | 44.96 грн |
1000+ | 36.63 грн |
G65P06T |
Виробник: Goford Semiconductor
Description: P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Description: P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.08 грн |
10+ | 84.2 грн |
G66 |
Виробник: Goford Semiconductor
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.88 грн |
G66 |
Виробник: Goford Semiconductor
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
товар відсутній
G6N02L |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Description: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)G6P06 |
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<96M@-10V,RD(MAX)<14
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
FET Feature: Standard
Power Dissipation (Max): 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
Description: P60V,RD(MAX)<96M@-10V,RD(MAX)<14
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
FET Feature: Standard
Power Dissipation (Max): 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 9.45 грн |
8000+ | 8.64 грн |
12000+ | 8.02 грн |
G6P06 |
Виробник: Goford Semiconductor
Description: P60V,RD(MAX)<96M@-10V,RD(MAX)<14
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
FET Feature: Standard
Power Dissipation (Max): 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
Description: P60V,RD(MAX)<96M@-10V,RD(MAX)<14
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
FET Feature: Standard
Power Dissipation (Max): 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.06 грн |
13+ | 23.04 грн |
100+ | 16.04 грн |
500+ | 11.76 грн |
1000+ | 9.56 грн |
2000+ | 8.54 грн |
G700P06D3 |
Виробник: Goford Semiconductor
Description: P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
Description: P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
товар відсутній
G700P06D3 |
Виробник: Goford Semiconductor
Description: P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
Description: P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.71 грн |
12+ | 25.67 грн |
100+ | 15.43 грн |
500+ | 13.41 грн |
1000+ | 9.12 грн |
G700P06D5 |
Виробник: Goford Semiconductor
Description: P-60V,-25A,RD(MAX)<70M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 30 V
Description: P-60V,-25A,RD(MAX)<70M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 30 V
товар відсутній
G700P06D5 |
Виробник: Goford Semiconductor
Description: P-60V,-25A,RD(MAX)<70M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 30 V
Description: P-60V,-25A,RD(MAX)<70M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 30 V
на замовлення 4854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.97 грн |
11+ | 27.74 грн |
100+ | 19.24 грн |
500+ | 14.09 грн |
1000+ | 11.46 грн |
2000+ | 10.24 грн |
G700P06H |
Виробник: Goford Semiconductor
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.97 грн |
12+ | 25.1 грн |
100+ | 15.07 грн |
500+ | 13.09 грн |
1000+ | 8.9 грн |
G700P06H |
Виробник: Goford Semiconductor
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 9.07 грн |
G700P06J |
Виробник: Goford Semiconductor
Description: P-60V,-23A,RD(MAX)<70M@-10V,VTH-
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 30 V
Description: P-60V,-23A,RD(MAX)<70M@-10V,VTH-
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 30 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.28 грн |
12+ | 24.82 грн |
100+ | 17.24 грн |
G700P06LL |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 5A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V
Description: MOSFET P-CH 60V 5A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.4 грн |
G700P06T |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET P-CH 60V 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 15.14 грн |
G700P06T |
Виробник: Goford Semiconductor
Description: P-60V,25A,RD<70M@-10V,VTH1V~-2.5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1428 pF @ 30 V
Description: P-60V,25A,RD<70M@-10V,VTH1V~-2.5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1428 pF @ 30 V
на замовлення 123 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.79 грн |
50+ | 36.17 грн |
100+ | 26.26 грн |
G70N04T |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 40V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 18.07 грн |
G70P02K |
Виробник: Goford Semiconductor
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.26 грн |
G70P02K |
Виробник: Goford Semiconductor
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
FET Feature: Standard
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 10 V
на замовлення 3509 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.13 грн |
10+ | 44.31 грн |
100+ | 34.46 грн |
500+ | 27.42 грн |
1000+ | 22.33 грн |
G75P04D5I |
Виробник: Goford Semiconductor
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6414 pF @ 20 V
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6414 pF @ 20 V
товар відсутній
G75P04FI |
Виробник: Goford Semiconductor
Description: P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6275 pF @ 20 V
Description: P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6275 pF @ 20 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 97.48 грн |
10+ | 83.7 грн |
G75P04K |
Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
товар відсутній
G75P04K |
Виробник: Goford Semiconductor
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.65 грн |
10+ | 88.11 грн |
100+ | 68.7 грн |
500+ | 53.26 грн |
1000+ | 42.05 грн |
G75P04K |
Виробник: GOFORD Semiconductor
P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252
P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 29.68 грн |
G75P04KI |
Виробник: Goford Semiconductor
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6586 pF @ 20 V
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6586 pF @ 20 V
товар відсутній
G75P04S |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 40V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
FET Feature: Standard
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET P-CH 40V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
FET Feature: Standard
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 23.36 грн |
G75P04SI |
Виробник: Goford Semiconductor
Description: P-40V,-11A,RD(MAX)<8M@-10V,VTH-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6509 pF @ 20 V
Description: P-40V,-11A,RD(MAX)<8M@-10V,VTH-1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6509 pF @ 20 V
товар відсутній
G75P04TI |
Виробник: Goford Semiconductor
Description: P-40V,-70A,RD(MAX)<7M@-10V,VTH-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6407 pF @ 20 V
Description: P-40V,-70A,RD(MAX)<7M@-10V,VTH-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6407 pF @ 20 V
товар відсутній
G7K2N20HE |
Виробник: Goford Semiconductor
Description: MOSFET N-CH ESD 200V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH ESD 200V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 7.36 грн |
G7K2N20HE |
Виробник: Goford Semiconductor
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
на замовлення 692 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.23 грн |
12+ | 25.1 грн |
100+ | 15.04 грн |
500+ | 13.07 грн |
G7K2N20HE |
Виробник: Goford Semiconductor
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
товар відсутній
G7K2N20LLE |
Виробник: Goford Semiconductor
Description: MOSFET N-CH ESD 200V 2A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 100 V
Description: MOSFET N-CH ESD 200V 2A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 100 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5 грн |
15000+ | 4.42 грн |
G7P03D2 |
Виробник: Goford Semiconductor
Description: P-30V,-7A,RD(MAX)<20.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: P-30V,-7A,RD(MAX)<20.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
G7P03L |
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
товар відсутній
G7P03L |
Виробник: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.74 грн |
15000+ | 5.26 грн |
30000+ | 4.79 грн |
G7P03L |
Виробник: Goford Semiconductor
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 3241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.23 грн |
13+ | 22.61 грн |
100+ | 11.41 грн |
500+ | 9.49 грн |
1000+ | 7.39 грн |
G7P03L |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET P-CH 30V 7A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 1.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.86 грн |
15000+ | 4.29 грн |
30000+ | 3.9 грн |
G7P03S |
Виробник: GOFORD Semiconductor
P-Channel Trench MOSFET
P-Channel Trench MOSFET
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 8.06 грн |
16000+ | 7.58 грн |
32000+ | 7.1 грн |
G7P03S |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1253 pF @ 15 V
Description: MOSFET P-CH 30V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1253 pF @ 15 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 6.81 грн |
16000+ | 6.14 грн |
32000+ | 5.79 грн |
G800N06H |
Виробник: Goford Semiconductor
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
товар відсутній
G800N06H |
Виробник: Goford Semiconductor
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.28 грн |
14+ | 20.91 грн |
100+ | 10.53 грн |
500+ | 8.76 грн |
1000+ | 6.82 грн |
G800N06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3912 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.76 грн |
13+ | 23.68 грн |
100+ | 14.18 грн |
500+ | 12.32 грн |
1000+ | 8.38 грн |
2000+ | 7.71 грн |
G800N06S2 |
Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
товар відсутній
G80N03K |
Виробник: Goford Semiconductor
Description: N30V, 80A,RD<6.5M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V
Description: N30V, 80A,RD<6.5M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V
товар відсутній
G80N03K |
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 80A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 80A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 12.41 грн |
G80N03K |
Виробник: Goford Semiconductor
Description: N30V, 80A,RD<6.5M@10V,VTH1.0V~2.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V
Description: N30V, 80A,RD<6.5M@10V,VTH1.0V~2.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V
на замовлення 2462 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.87 грн |
10+ | 47.43 грн |
100+ | 32.83 грн |
500+ | 25.74 грн |
1000+ | 21.91 грн |
G86N06K |
Виробник: Goford Semiconductor
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 21.05 грн |
G86N06K |
Виробник: Goford Semiconductor
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 81.97 грн |
10+ | 70.48 грн |
100+ | 54.96 грн |
500+ | 42.61 грн |
1000+ | 33.64 грн |
G86N06K |
Виробник: Goford Semiconductor
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 4A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 34.74 грн |
G900P15D5 |
Виробник: Goford Semiconductor
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
Drain to Source Voltage (Vdss): 150 V
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
Drain to Source Voltage (Vdss): 150 V
товар відсутній
G900P15D5 |
Виробник: Goford Semiconductor
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.08 грн |
10+ | 84.27 грн |
100+ | 65.55 грн |
500+ | 52.14 грн |
1000+ | 42.47 грн |
2000+ | 39.98 грн |
G900P15K |
Виробник: Goford Semiconductor
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
товар відсутній
G900P15K |
Виробник: Goford Semiconductor
Description: MOSFET P-CH 150V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
Description: MOSFET P-CH 150V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 38.85 грн |