Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121558) > Сторінка 1997 з 2026

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IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES irfh9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Polarisation: unipolar
Case: PQFN5X6
на замовлення 2916 шт:
термін постачання 14-30 дні (днів)
4+115.60 грн
10+77.99 грн
50+62.90 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFHM9331TRPBF IRFHM9331TRPBF INFINEON TECHNOLOGIES irfhm9331pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Power dissipation: 2.8W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 787 шт:
термін постачання 14-30 дні (днів)
9+54.91 грн
25+39.58 грн
50+34.55 грн
100+29.86 грн
250+24.66 грн
500+21.30 грн
650+20.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRFH7440TRPBF IRFH7440TRPBF INFINEON TECHNOLOGIES IRFH7440TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 3134 шт:
термін постачання 14-30 дні (днів)
4+112.90 грн
6+83.03 грн
10+72.12 грн
50+64.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFH4234TRPBF IRFH4234TRPBF INFINEON TECHNOLOGIES irfh4234pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 22A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
на замовлення 1486 шт:
термін постачання 14-30 дні (днів)
24+18.97 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
IRFH8324TRPBF IRFH8324TRPBF INFINEON TECHNOLOGIES irfh8324pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5020TRPBF IRFH5020TRPBF INFINEON TECHNOLOGIES irfh5020pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN5X6
Kind of package: reel
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 5.1A
Drain-source voltage: 200V
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IRFH5300TRPBF IRFH5300TRPBF INFINEON TECHNOLOGIES irfh5300pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES irfh5250pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5110TRPBF IRFH5110TRPBF INFINEON TECHNOLOGIES irfh5110pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Power dissipation: 3.6W
Mounting: SMD
Kind of package: reel
Case: PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Kind of channel: enhancement
Technology: HEXFET®
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IRFH5025TRPBF IRFH5025TRPBF INFINEON TECHNOLOGIES irfh5025pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFHM830TRPBF IRFHM830TRPBF INFINEON TECHNOLOGIES irfhm830pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: PQFN3.3X3.3
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Power dissipation: 2.7W
Drain current: 21A
Drain-source voltage: 30V
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IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES irfh5250dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5007TRPBF IRFH5007TRPBF INFINEON TECHNOLOGIES irfh5007pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302TRPBF IRFH5302TRPBF INFINEON TECHNOLOGIES irfh5302pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5304TRPBF IRFH5304TRPBF INFINEON TECHNOLOGIES irfh5304pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8201TRPBF IRFH8201TRPBF INFINEON TECHNOLOGIES IRFH8201TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7085TRPBF INFINEON TECHNOLOGIES irfh7085pbf.pdf?fileId=5546d462533600a40153561eb50c1ed6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 147A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 147A
Power dissipation: 156W
Case: PQFN8
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
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IRFH4210DTRPBF IRFH4210DTRPBF INFINEON TECHNOLOGIES irfh4210dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
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IRFH4251DTRPBF IRFH4251DTRPBF INFINEON TECHNOLOGIES irfh4251dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
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IRFH5053TRPBF IRFH5053TRPBF INFINEON TECHNOLOGIES irfh5053pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5210TRPBF IRFH5210TRPBF INFINEON TECHNOLOGIES irfh5210pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5215TRPBF IRFH5215TRPBF INFINEON TECHNOLOGIES irfh5215pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5301TRPBF IRFH5301TRPBF INFINEON TECHNOLOGIES irfh5301pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302DTRPBF IRFH5302DTRPBF INFINEON TECHNOLOGIES irfh5302dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH6200TRPBF IRFH6200TRPBF INFINEON TECHNOLOGIES irfh6200pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7004TRPBF INFINEON TECHNOLOGIES irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
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IRFH7446TRPBF IRFH7446TRPBF INFINEON TECHNOLOGIES IRFH7446TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 65nC
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Gate-source voltage: ±20V
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IRFH7545TRPBF INFINEON TECHNOLOGIES irfh7545pbf.pdf?fileId=5546d462533600a40153561f1e511ef1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
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IRFH7921TRPBF IRFH7921TRPBF INFINEON TECHNOLOGIES irfh7921pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7934TRPBF IRFH7934TRPBF INFINEON TECHNOLOGIES irfh7934pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8303TRPBF IRFH8303TRPBF INFINEON TECHNOLOGIES IRFH8303TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8307TRPBF IRFH8307TRPBF INFINEON TECHNOLOGIES IRFH8307TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES IRFH8311TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8316TRPBF IRFH8316TRPBF INFINEON TECHNOLOGIES IRFH8316TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES IRFH8321TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES irfh8325pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ISZ0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 65W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
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ISC0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 INFINEON TECHNOLOGIES BSF450NE7NH3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFIZ44NPBF IRFIZ44NPBF INFINEON TECHNOLOGIES irfiz44n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
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IRFI4410ZPBF IRFI4410ZPBF INFINEON TECHNOLOGIES IRFI4410ZPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
3+163.47 грн
10+129.15 грн
50+121.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFI4321PBF IRFI4321PBF INFINEON TECHNOLOGIES irfi4321pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
4+147.22 грн
10+129.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFI1310NPBF IRFI1310NPBF INFINEON TECHNOLOGIES irfi1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFI4229PBF IRFI4229PBF INFINEON TECHNOLOGIES irfi4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFI4212H-117PXKMA1 INFINEON TECHNOLOGIES irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 44A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
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IPB180P04P403ATMA1 IPB180P04P403ATMA1 INFINEON TECHNOLOGIES IPB180P04P403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -180A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
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ICL5101XUMA1 ICL5101XUMA1 INFINEON TECHNOLOGIES ICL5101-DTE.pdf Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
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S6E2C5AJ0AGB1000A INFINEON TECHNOLOGIES download Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 1870 шт:
термін постачання 14-30 дні (днів)
168+1363.77 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
S6E2CCAJ0AGB1000A INFINEON TECHNOLOGIES download Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 3878 шт:
термін постачання 14-30 дні (днів)
168+1602.21 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
IRF630NPBF IRF630NPBF INFINEON TECHNOLOGIES irf630n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
7+68.64 грн
11+39.50 грн
25+31.20 грн
50+30.11 грн
100+29.10 грн
250+27.84 грн
500+26.84 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF630NSTRLPBF IRF630NSTRLPBF INFINEON TECHNOLOGIES irf630npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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ITS6080SEPDXUMA1 INFINEON TECHNOLOGIES infineon-its6080s-ep-d-datasheet-en.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+140.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES irll024n.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 2.1W
Gate-source voltage: ±16V
Drain-source voltage: 55V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 10.4nC
On-state resistance: 65mΩ
Drain current: 4.4A
на замовлення 487 шт:
термін постачання 14-30 дні (днів)
8+63.22 грн
11+40.67 грн
50+28.85 грн
100+24.99 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF300P226 IRF300P226 INFINEON TECHNOLOGIES IRF300P226.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
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IRF300P227 IRF300P227 INFINEON TECHNOLOGIES IRF300P227.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
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IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES irfp054n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 328 шт:
термін постачання 14-30 дні (днів)
3+214.95 грн
10+114.06 грн
25+99.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C68013A-56PVXC INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral description Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY7C68013A-56PVXCT INFINEON TECHNOLOGIES Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56
Type of integrated circuit: USB controller
Interface: 8/16bit BUS; GPIO; I2C; UART
Memory: 16kB FLASH
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY8C5888AXI-LP096 CY8C5888AXI-LP096 INFINEON TECHNOLOGIES infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 80MHz
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CY8C5888LTI-LP097 INFINEON TECHNOLOGIES infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 64kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 80MHz
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IRFH9310TRPBF irfh9310pbf.pdf
IRFH9310TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Kind of package: reel
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Polarisation: unipolar
Case: PQFN5X6
на замовлення 2916 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+115.60 грн
10+77.99 грн
50+62.90 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFHM9331TRPBF irfhm9331pbf.pdf
IRFHM9331TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Power dissipation: 2.8W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 787 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+54.91 грн
25+39.58 грн
50+34.55 грн
100+29.86 грн
250+24.66 грн
500+21.30 грн
650+20.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRFH7440TRPBF IRFH7440TRPBF.pdf
IRFH7440TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 85A
Power dissipation: 104W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 3134 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+112.90 грн
6+83.03 грн
10+72.12 грн
50+64.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRFH4234TRPBF irfh4234pbf.pdf
IRFH4234TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 22A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 22A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
на замовлення 1486 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
24+18.97 грн
Мінімальне замовлення: 24
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IRFH8324TRPBF irfh8324pbf.pdf
IRFH8324TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5020TRPBF irfh5020pbf.pdf
IRFH5020TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN5X6
Kind of package: reel
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 5.1A
Drain-source voltage: 200V
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IRFH5300TRPBF irfh5300pbf.pdf
IRFH5300TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5250TRPBF irfh5250pbf.pdf
IRFH5250TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5110TRPBF irfh5110pbf.pdf
IRFH5110TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Power dissipation: 3.6W
Mounting: SMD
Kind of package: reel
Case: PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Kind of channel: enhancement
Technology: HEXFET®
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IRFH5025TRPBF irfh5025pbf.pdf
IRFH5025TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFHM830TRPBF irfhm830pbf.pdf
IRFHM830TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Technology: HEXFET®
Kind of channel: enhancement
Polarisation: unipolar
Case: PQFN3.3X3.3
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Power dissipation: 2.7W
Drain current: 21A
Drain-source voltage: 30V
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IRFH5250DTRPBF irfh5250dpbf.pdf
IRFH5250DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5007TRPBF irfh5007pbf.pdf
IRFH5007TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302TRPBF irfh5302pbf.pdf
IRFH5302TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5304TRPBF irfh5304pbf.pdf
IRFH5304TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8201TRPBF IRFH8201TRPBF.pdf
IRFH8201TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 324A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7085TRPBF irfh7085pbf.pdf?fileId=5546d462533600a40153561eb50c1ed6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 147A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 147A
Power dissipation: 156W
Case: PQFN8
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
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IRFH4210DTRPBF irfh4210dpbf.pdf
IRFH4210DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
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IRFH4251DTRPBF irfh4251dpbf.pdf
IRFH4251DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Trade name: FastIRFET
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IRFH5053TRPBF irfh5053pbf.pdf
IRFH5053TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.3A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.3A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5210TRPBF irfh5210pbf.pdf
IRFH5210TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IRFH5215TRPBF irfh5215pbf.pdf
IRFH5215TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5301TRPBF irfh5301pbf.pdf
IRFH5301TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5302DTRPBF irfh5302dpbf.pdf
IRFH5302DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IRFH6200TRPBF irfh6200pbf.pdf
IRFH6200TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7004TRPBF irfh7004pbf.pdf?fileId=5546d462533600a40153561ea3e51ed2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 1247A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 164A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1247A
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IRFH7446TRPBF IRFH7446TRPBF.pdf
IRFH7446TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 117A
Power dissipation: 78W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 65nC
On-state resistance: 3.3mΩ
Trade name: StrongIRFET
Gate-source voltage: ±20V
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IRFH7545TRPBF irfh7545pbf.pdf?fileId=5546d462533600a40153561f1e511ef1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 54A; Idm: 340A; 83W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 54A
Power dissipation: 83W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 340A
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IRFH7921TRPBF description irfh7921pbf.pdf
IRFH7921TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 3.1W; PQFN8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 3.1W
Case: PQFN8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH7934TRPBF irfh7934pbf.pdf
IRFH7934TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8303TRPBF IRFH8303TRPBF.pdf
IRFH8303TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8307TRPBF IRFH8307TRPBF.pdf
IRFH8307TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF.pdf
IRFH8311TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8316TRPBF IRFH8316TRPBF.pdf
IRFH8316TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8321TRPBF IRFH8321TRPBF.pdf
IRFH8321TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8325TRPBF irfh8325pbf.pdf
IRFH8325TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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ISZ0702NLSATMA1 Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 65W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Power dissipation: 65W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
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ISC0702NLSATMA1 Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 135A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSF450NE7NH3XUMA1 BSF450NE7NH3-DTE.pdf
BSF450NE7NH3XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 15A
Power dissipation: 18W
Case: CanPAK™ S; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFIZ44NPBF irfiz44n.pdf
IRFIZ44NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 28A
Power dissipation: 38W
Case: TO220FP
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Gate charge: 43.3nC
On-state resistance: 24mΩ
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IRFI4410ZPBF IRFI4410ZPBF.pdf
IRFI4410ZPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 975 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+163.47 грн
10+129.15 грн
50+121.60 грн
Мінімальне замовлення: 3
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IRFI4321PBF irfi4321pbf.pdf
IRFI4321PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+147.22 грн
10+129.99 грн
Мінімальне замовлення: 4
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IRFI1310NPBF irfi1310n.pdf
IRFI1310NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFI4229PBF irfi4229pbf.pdf
IRFI4229PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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IRFI4212H-117PXKMA1 irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.8A; Idm: 44A; 7W; TO220-5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 44A
Power dissipation: 7W
Case: TO220-5
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Half-Bridge Power MOSFET
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IPB180P04P403ATMA1 IPB180P04P403.pdf
IPB180P04P403ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -180A
Power dissipation: 150W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhancement
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ICL5101XUMA1 ICL5101-DTE.pdf
ICL5101XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; resonant LLC; PG-DSO-16-23; 700mA; Ch: 1; dead time
Type of integrated circuit: driver
Topology: resonant LLC
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-16-23
Output current: 0.7A
Number of channels: 1
Integrated circuit features: dead time
Mounting: SMD
Operating voltage: 8.6...17.5V DC
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S6E2C5AJ0AGB1000A download
Виробник: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 1870 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
168+1363.77 грн
Мінімальне замовлення: 168
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S6E2CCAJ0AGB1000A download
Виробник: INFINEON TECHNOLOGIES
Category: ST microcontrollers
Description: IC: ARM microcontroller; 200MHz; 2MBFLASH; ARM; Core: 32-bit
на замовлення 3878 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
168+1602.21 грн
Мінімальне замовлення: 168
В кошику  од. на суму  грн.
IRF630NPBF description irf630n.pdf
IRF630NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 23.3nC
Kind of package: tube
на замовлення 751 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+68.64 грн
11+39.50 грн
25+31.20 грн
50+30.11 грн
100+29.10 грн
250+27.84 грн
500+26.84 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRF630NSTRLPBF irf630npbf.pdf
IRF630NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 82W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 82W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; 8A; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 80mΩ
Output current: 8A
Active logical level: high
Kind of output: N-Channel
Case: PG-TSDSO-14
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+140.89 грн
Мінімальне замовлення: 3000
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IRLL024NTRPBF description irll024n.pdf
IRLL024NTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 2.1W
Gate-source voltage: ±16V
Drain-source voltage: 55V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 10.4nC
On-state resistance: 65mΩ
Drain current: 4.4A
на замовлення 487 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+63.22 грн
11+40.67 грн
50+28.85 грн
100+24.99 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IRF300P226 IRF300P226.pdf
IRF300P226
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 53A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 53A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 191nC
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IRF300P227 IRF300P227.pdf
IRF300P227
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 300V; 35A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 107nC
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IRFP054NPBF irfp054n.pdf
IRFP054NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 328 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+214.95 грн
10+114.06 грн
25+99.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C68013A-56PVXC description Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 16bit,8bit,I2C,USB 2.0; 3÷3.6VDC; SO56
Type of integrated circuit: USB controller
Interface: 8bit; 16bit; I2C; USB 2.0
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY7C68013A-56PVXCT Infineon-CY7C68013A_CY7C68014A_CY7C68015A_CY7C68016A_EZ-USB_FX2LP_USB_Microcontroller_High-Speed_USB_Peripheral_Controller-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec9f7974252&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB controller; 8/16bit BUS,GPIO,I2C,UART; 16kBFLASH; SO56
Type of integrated circuit: USB controller
Interface: 8/16bit BUS; GPIO; I2C; UART
Memory: 16kB FLASH
Supply voltage: 3...3.6V DC
Case: SO56
Integrated circuit features: USB peripheral driver
Mounting: SMD
Operating temperature: 0...70°C
Number of inputs/outputs: 24
Kind of core: 8-bit
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CY8C5888AXI-LP096 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5888AXI-LP096
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 80MHz
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CY8C5888LTI-LP097 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 80MHz; QFN68; 64kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 64kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 80MHz
товару немає в наявності
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