Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (128844) > Сторінка 2114 з 2148
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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| TLE42662GHTMA2 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| TLE42664GHTMA2 | INFINEON TECHNOLOGIES |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator Type of integrated circuit: voltage regulator |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
| BTS5215LAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch Type of integrated circuit: power switch |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
|
BFR380FH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3 Mounting: SMD Case: TSFP-3 Collector-emitter voltage: 15V Power dissipation: 0.38W Polarisation: bipolar Kind of transistor: RF Type of transistor: NPN Kind of package: reel; tape Frequency: 14GHz Collector current: 80mA |
на замовлення 5583 шт: термін постачання 14-30 дні (днів) |
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| BFR380FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| BFR380L3E6327XTMA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar Mounting: SMD Polarisation: bipolar Type of transistor: NPN |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||
| IR21363JTRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| IR21363STRPBF | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: IC: driver Type of integrated circuit: driver |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
|
CY8C23533-24LQXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; QFN32; 250BSRAM,8kBFLASH Operating temperature: -40...85°C Number of inputs/outputs: 26 Type of integrated circuit: PSoC microcontroller Clock frequency: 24MHz Kind of core: 8-bit Memory: 250B SRAM; 8kB FLASH Case: QFN32 Interface: GPIO; I2C; SPI; UART Mounting: SMD Supply voltage: 3...5.25V DC |
товару немає в наявності |
Мінімальне замовлення: 980 шт В кошику од. на суму грн. | ||||||||||
| S29GL128P11FFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: CFI; parallel |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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S29GL128P90FFIR20 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| BAS16WH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching Type of diode: switching |
товару немає в наявності |
Мінімальне замовлення: 50000 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021D-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021DV33-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 17 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021DV33-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| CY7C1041G-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 17 шт В кошику од. на суму грн. | |||||||||||
| CY7C1041G-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| CY7C1041G30-10VXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 17 шт В кошику од. на суму грн. | |||||||||||
| CY7C1041G30-10VXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021D-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 4.5...5.5V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CY7C1021D-10ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021DV33-10BVXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021DV33-10ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating voltage: 3...3.6V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
| CY7C1021DV33-10BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 3...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
|
BFP540H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343 Type of transistor: NPN Collector current: 80mA Mounting: SMD Collector-emitter voltage: 4.5V Power dissipation: 0.25W Polarisation: bipolar Technology: SIEGET™ Kind of transistor: RF Kind of package: reel; tape Case: SOT343 Frequency: 33GHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| BFP540ESDH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| S25HS512TDPBHI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||
| S25HS512TDPMHI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 1.7...2V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||
| S25HS512TFABHI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 166MHz Operating voltage: 1.7...2V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||
| S25HS512TFANHI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 166MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S25HS512TFANHI013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 166MHz Operating voltage: 1.7...2V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
|
IPT60R065S7XTMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A Type of transistor: N-MOSFET Technology: CoolMOS™ S7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 126A Power dissipation: 167W Case: TO220 Gate-source voltage: ±20V On-state resistance: 137mΩ Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
| IPLK60R360PFD7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||
| IPL65R165CFDAUMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R185P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 19A; 81W; VSON4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Power dissipation: 81W Case: VSON4 On-state resistance: 0.149Ω Mounting: SMD Kind of channel: enhancement Gate charge: 25nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
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IPL60R104C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 122W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: SMD Kind of channel: enhancement Gate charge: 42nC |
на замовлення 2550 шт: термін постачання 14-30 дні (днів) |
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IPL60R085P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 154W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 154W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 51nC Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPL60R075CFD7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 189W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.149Ω Mounting: SMD Kind of channel: enhancement Gate charge: 67nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPL60R105P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 137W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of channel: enhancement Gate charge: 45nC Version: ESD Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Version: ESD Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPL60R210P6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPL60R285P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 59W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 59W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.285Ω Mounting: SMD Kind of channel: enhancement Gate charge: 18nC Version: ESD Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IPL60R650P6SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Power dissipation: 56.8W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IPL60R060CFD7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R065C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R075CFD7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R095CFD7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R125C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R140CFD7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| IPL60R160CFD7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
|
IPL60R180P6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.4A Power dissipation: 176W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IPL60R185C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
|
IPL60R185CFD7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 85W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.346Ω Mounting: SMD Kind of channel: enhancement Gate charge: 28nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IPL60R185CFD7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
|
IPL60R199CPAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16.4A Power dissipation: 139W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IPL60R1K5C6SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 26.6W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IPL60R299CPAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11.1A; 96W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 11.1A Power dissipation: 96W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IPL60R2K1C6SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 21.6W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.3A Power dissipation: 21.6W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IPL60R365P7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; 46W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 46W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.365Ω Mounting: SMD Kind of channel: enhancement Gate charge: 13nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| TLE42662GHTMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TLE42664GHTMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BTS5215LAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BFR380FH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Mounting: SMD
Case: TSFP-3
Collector-emitter voltage: 15V
Power dissipation: 0.38W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Frequency: 14GHz
Collector current: 80mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSFP-3
Mounting: SMD
Case: TSFP-3
Collector-emitter voltage: 15V
Power dissipation: 0.38W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Frequency: 14GHz
Collector current: 80mA
на замовлення 5583 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.74 грн |
| 22+ | 19.53 грн |
| 100+ | 11.72 грн |
| 500+ | 8.56 грн |
| BFR380FH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BFR380L3E6327XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| IR21363JTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IR21363STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Drivers - integrated circuits
Description: IC: driver
Type of integrated circuit: driver
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY8C23533-24LQXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN32; 250BSRAM,8kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 26
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 250B SRAM; 8kB FLASH
Case: QFN32
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Supply voltage: 3...5.25V DC
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN32; 250BSRAM,8kBFLASH
Operating temperature: -40...85°C
Number of inputs/outputs: 26
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Kind of core: 8-bit
Memory: 250B SRAM; 8kB FLASH
Case: QFN32
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Supply voltage: 3...5.25V DC
товару немає в наявності
Мінімальне замовлення: 980 шт
В кошику
од. на суму грн.
| S29GL128P11FFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 557.51 грн |
| 5+ | 494.42 грн |
| 25+ | 448.72 грн |
| S29GL128P90FFIR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| BSR315PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BAS16WH6433XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
товару немає в наявності
Мінімальне замовлення: 50000 шт
В кошику
од. на суму грн.
| CY7C1021D-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CY7C1021DV33-10VXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 17 шт
В кошику
од. на суму грн.
| CY7C1021DV33-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CY7C1041G-10VXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 4.5...5.5V DC
товару немає в наявності
Мінімальне замовлення: 17 шт
В кошику
од. на суму грн.
| CY7C1041G-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CY7C1041G30-10VXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2.2...3.6V DC
товару немає в наявності
Мінімальне замовлення: 17 шт
В кошику
од. на суму грн.
| CY7C1041G30-10VXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CY7C1021D-10ZSXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 4.5...5.5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 4.5÷5.5V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 4.5...5.5V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| CY7C1021D-10ZSXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY7C1021DV33-10BVXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику
од. на суму грн.
| CY7C1021DV33-10ZSXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY7C1021DV33-10BVXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BFP540H6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 4.5V
Power dissipation: 0.25W
Polarisation: bipolar
Technology: SIEGET™
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 33GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 80mA; 0.25W; SOT343
Type of transistor: NPN
Collector current: 80mA
Mounting: SMD
Collector-emitter voltage: 4.5V
Power dissipation: 0.25W
Polarisation: bipolar
Technology: SIEGET™
Kind of transistor: RF
Kind of package: reel; tape
Case: SOT343
Frequency: 33GHz
товару немає в наявності
В кошику
од. на суму грн.
| BFP540ESDH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| S25HS512TDPBHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S25HS512TDPMHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| S25HS512TFABHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S25HS512TFANHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S25HS512TFANHI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 166MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IPT60R065S7XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPLK60R360PFD7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPL65R165CFDAUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R185P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; 81W; VSON4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 81W
Case: VSON4
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; 81W; VSON4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 81W
Case: VSON4
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R104C7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
на замовлення 2550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 396.43 грн |
| 5+ | 283.36 грн |
| 10+ | 256.77 грн |
| 25+ | 226.02 грн |
| 50+ | 218.54 грн |
| IPL60R085P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 154W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 154W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 154W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 154W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R075CFD7 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 189W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 189W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 67nC
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R105P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Version: ESD
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Version: ESD
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R125P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R210P6AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R285P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 59W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 59W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.285Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Version: ESD
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 59W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 59W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.285Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 18nC
Version: ESD
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R650P6SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R060CFD7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R065C7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R075CFD7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R095CFD7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R125C7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R140CFD7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| IPL60R160CFD7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R180P6AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
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| IPL60R185C7AUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R185CFD7 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.346Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.346Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R185CFD7AUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPL60R199CPAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.4A
Power dissipation: 139W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.4A
Power dissipation: 139W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
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| IPL60R1K5C6SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 26.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 26.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of channel: enhancement
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| IPL60R299CPAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.1A; 96W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.1A
Power dissipation: 96W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11.1A; 96W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11.1A
Power dissipation: 96W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of channel: enhancement
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| IPL60R2K1C6SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 21.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 21.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.3A; 21.6W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.3A
Power dissipation: 21.6W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of channel: enhancement
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| IPL60R365P7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 46W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 46W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 46W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 46W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.365Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Version: ESD
товару немає в наявності
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од. на суму грн.














