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S25FL128LAGMFM013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGNFM010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGNFM013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFM010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SDSMFM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S29CD016J0MQFM010 INFINEON TECHNOLOGIES download Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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BSS306NH6327XTSA1 BSS306NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E3071C8DD10B&compId=BSS306NH6327XTSA1.pdf?ci_sign=b57fd6087103aae6c00284217bd6b1dfba4849d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 93mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 10644 шт:
термін постачання 21-30 дні (днів)
18+23.82 грн
27+14.69 грн
50+10.35 грн
100+8.93 грн
171+5.45 грн
470+5.13 грн
3000+4.98 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 3317 шт:
термін постачання 21-30 дні (днів)
24+17.86 грн
37+10.82 грн
53+7.50 грн
100+6.45 грн
250+5.36 грн
288+3.23 грн
791+3.05 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
S25HL512TDPNHB010 INFINEON TECHNOLOGIES infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
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S25HL512TDPNHI010 INFINEON TECHNOLOGIES 002-12345_rev-AF.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
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S25HL512TFANHI010 INFINEON TECHNOLOGIES Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HL512TFANHM013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Application: automotive
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S25HS512TFANHI010 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HS512TFANHI013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
Collector current: 70mA
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
20+21.26 грн
26+15.64 грн
29+13.90 грн
33+12.01 грн
50+10.90 грн
100+10.03 грн
105+8.93 грн
287+8.45 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRF7241TRPBF IRF7241TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 879 шт:
термін постачання 21-30 дні (днів)
8+56.14 грн
9+45.65 грн
10+41.31 грн
26+36.41 грн
71+34.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS126IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+3.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Case: LGA8
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
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IRF7379TRPBF IRF7379TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7329TRPBF INFINEON TECHNOLOGIES irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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AUIRF7379QTR AUIRF7379QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
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IRF7424TRPBF IRF7424TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7425TRPBF IRF7425TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
6+83.36 грн
10+60.03 грн
18+52.13 грн
25+51.34 грн
50+47.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRF9317TRPBF IRF9317TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AF36409D0BF1A303005056AB0C4F&compId=irf9317pbf.pdf?ci_sign=8a0f5023cdbb5a2b9e43b14f674edeb990a3138a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IRF9388TRPBF INFINEON TECHNOLOGIES irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IPL65R460CFDAUMA1 IPL65R460CFDAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB932CE4575B1BF&compId=IPL65R460CFD-DTE.pdf?ci_sign=d4d0007d0996f627373bb3ac4b85d887a9a79876 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
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XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
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BSB012NE2LXIXUMA1 BSB012NE2LXIXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D59F589818A11C&compId=BSB012NE2LXI-DTE.pdf?ci_sign=b06e7e426630df7168b8da6aeb6903e969bd1009 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 170A
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IRFR4615TRLPBF IRFR4615TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C480486A10F1A303005056AB0C4F&compId=irfr4615pbf.pdf?ci_sign=7b57008704512c411e825a0925361ef7b5ea5cf5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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ISP650P06NMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+41.17 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSD235CH6327XTSA1 BSD235CH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C2490D540B6469&compId=BSD235CH6327XTSA1.pdf?ci_sign=02f2542ad9f8a828aa19eb10d1b08f515b50f21b Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2669 шт:
термін постачання 21-30 дні (днів)
15+28.92 грн
19+21.01 грн
22+18.09 грн
50+12.32 грн
100+10.43 грн
175+5.37 грн
478+5.05 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
CY8C4025LQI-S411 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: CY8C4025LQI-S411
на замовлення 3924 шт:
термін постачання 21-30 дні (днів)
490+159.06 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
CY8C4025LQI-S411T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+119.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFP4332PBF IRFP4332PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
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S25FL128LAGMFM013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGNFM010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGNFM013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFM010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SDSMFM013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S29CD016J0MQFM010 download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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BSS306NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7E3071C8DD10B&compId=BSS306NH6327XTSA1.pdf?ci_sign=b57fd6087103aae6c00284217bd6b1dfba4849d0
BSS306NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 93mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 10644 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.82 грн
27+14.69 грн
50+10.35 грн
100+8.93 грн
171+5.45 грн
470+5.13 грн
3000+4.98 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSS214NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7CF1EC57F710B&compId=BSS214NH6327XTSA1.pdf?ci_sign=3d212ae0b6db65579c46b913210d28885837f077
BSS214NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 3317 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.86 грн
37+10.82 грн
53+7.50 грн
100+6.45 грн
250+5.36 грн
288+3.23 грн
791+3.05 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
S25HL512TDPNHB010 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf?fileId=8ac78c8c7f2a768a017f52f1a4242c57
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
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S25HL512TDPNHI010 002-12345_rev-AF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
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S25HL512TFANHI010 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HL512TFANHM013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Application: automotive
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S25HS512TFANHI010
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HS512TFANHI013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
Collector current: 70mA
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.26 грн
26+15.64 грн
29+13.90 грн
33+12.01 грн
50+10.90 грн
100+10.03 грн
105+8.93 грн
287+8.45 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRF7241TRPBF description pVersion=0046&contRep=ZT&docId=E21F7487F4D128F1A303005056AB0C4F&compId=irf7241pbf.pdf?ci_sign=3e6eac7109da8f3470ac2e7a87b7804a4856b55f
IRF7241TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 879 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.14 грн
9+45.65 грн
10+41.31 грн
26+36.41 грн
71+34.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+3.99 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S25FS064SAGNFB033
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Case: LGA8
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
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IRF7379TRPBF pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8
IRF7379TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7329TRPBF irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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AUIRF7379QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf
AUIRF7379QTR
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
товару немає в наявності
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IRF7424TRPBF pVersion=0046&contRep=ZT&docId=E221A2F20A319EF1A303005056AB0C4F&compId=irf7424pbf.pdf?ci_sign=2acda5302fc942a596720f26cd0040453e140573
IRF7424TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7425TRPBF pVersion=0046&contRep=ZT&docId=E1C04E4D16F119F1A6F5005056AB5A8F&compId=irf7425pbf.pdf?ci_sign=81dddf218e1b31c29598ff40a3f7ac4bdc2728db pVersion=0046&contRep=ZT&docId=E221A30B2ACF36F1A303005056AB0C4F&compId=irf7425pbf.pdf?ci_sign=8154e3d2bf5a42d04cc55b32e63b7ef1350777ab
IRF7425TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 899 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.36 грн
10+60.03 грн
18+52.13 грн
25+51.34 грн
50+47.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRF9317TRPBF pVersion=0046&contRep=ZT&docId=E221AF36409D0BF1A303005056AB0C4F&compId=irf9317pbf.pdf?ci_sign=8a0f5023cdbb5a2b9e43b14f674edeb990a3138a
IRF9317TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPL65R460CFDAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB932CE4575B1BF&compId=IPL65R460CFD-DTE.pdf?ci_sign=d4d0007d0996f627373bb3ac4b85d887a9a79876
IPL65R460CFDAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
товару немає в наявності
В кошику  од. на суму  грн.
XMC4800E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
товару немає в наявності
В кошику  од. на суму  грн.
XMC4800E196K1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196K1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
товару немає в наявності
В кошику  од. на суму  грн.
BSB012NE2LXIXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4D59F589818A11C&compId=BSB012NE2LXI-DTE.pdf?ci_sign=b06e7e426630df7168b8da6aeb6903e969bd1009
BSB012NE2LXIXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 170A
товару немає в наявності
В кошику  од. на суму  грн.
IRFR4615TRLPBF pVersion=0046&contRep=ZT&docId=E221C480486A10F1A303005056AB0C4F&compId=irfr4615pbf.pdf?ci_sign=7b57008704512c411e825a0925361ef7b5ea5cf5
IRFR4615TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
TLE9250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361
TLE9250VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
товару немає в наявності
В кошику  од. на суму  грн.
ISP650P06NMXTSA1 Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+41.17 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSD235CH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C2490D540B6469&compId=BSD235CH6327XTSA1.pdf?ci_sign=02f2542ad9f8a828aa19eb10d1b08f515b50f21b
BSD235CH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2669 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.92 грн
19+21.01 грн
22+18.09 грн
50+12.32 грн
100+10.43 грн
175+5.37 грн
478+5.05 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
CY8C4025LQI-S411 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4025LQI-S411
на замовлення 3924 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
490+159.06 грн
Мінімальне замовлення: 490
В кошику  од. на суму  грн.
CY8C4025LQI-S411T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+119.08 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRFP4332PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C068F1A6F5005056AB5A8F&compId=irfp4332pbf.pdf?ci_sign=e2b517b35bae67aea1d77543e68108c262ec792d
IRFP4332PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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