Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149266) > Сторінка 2488 з 2488
Фото | Назва | Виробник | Інформація |
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XMC1402F064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Interface: GPIO; USIC x4 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Operating temperature: -40...105°C Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB60R125C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1402Q064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Interface: GPIO; USIC x4 Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Operating temperature: -40...105°C Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
S25FL064LABMFM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 108MHz Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL064LABMFM011 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 108MHz Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL064LABMFM013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 108MHz Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL064LABNFM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 108MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL128LAGMFM013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 133MHz Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL128LAGNFM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL128LAGNFM013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL512SDSMFM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 80MHz Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL512SDSMFM013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Operating frequency: 80MHz Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S29CD016J0MQFM010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: CFI; parallel burst Operating voltage: 2.5...2.75V Operating frequency: 56MHz Case: PQFP80 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23 Kind of channel: enhancement Mounting: SMD Case: SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 93mΩ Drain current: 2.3A Power dissipation: 0.5W Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 10644 шт: термін постачання 21-30 дні (днів) |
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BSS214NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23 Kind of channel: enhancement Mounting: SMD Case: SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 0.25Ω Drain current: 1.5A Power dissipation: 0.5W Gate-source voltage: ±12V Drain-source voltage: 20V |
на замовлення 3317 шт: термін постачання 21-30 дні (днів) |
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S25HL512TDPNHB010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Mounting: SMD Operating voltage: 2.7...3.6V Operating temperature: -40...105°C Type of integrated circuit: FLASH memory Case: WSON8 Kind of package: in-tray Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 133MHz Memory: 512Mb FLASH Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25HL512TDPNHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Mounting: SMD Operating voltage: 2.7...3.6V Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Case: WSON8 Kind of package: in-tray Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 133MHz Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25HL512TFANHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8 Mounting: SMD Operating voltage: 2.7...3.6V Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Case: WSON8 Kind of package: in-tray Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 166MHz Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25HL512TFANHM013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8 Mounting: SMD Operating voltage: 2.7...3.6V Operating temperature: -40...125°C Type of integrated circuit: FLASH memory Case: WSON8 Kind of package: reel; tape Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 166MHz Memory: 512Mb FLASH Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25HS512TFANHI010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8 Mounting: SMD Operating voltage: 1.7...2V Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Case: WSON8 Kind of package: in-tray Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 166MHz Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25HS512TFANHI013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8 Mounting: SMD Operating voltage: 1.7...2V Operating temperature: -40...85°C Type of integrated circuit: FLASH memory Case: WSON8 Kind of package: reel; tape Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 166MHz Memory: 512Mb FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BFP460H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.23W Case: SOT343 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 4.5V Current gain: 90...160 Frequency: 22GHz Kind of transistor: RF Technology: SIEGET™ Collector current: 70mA |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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IRF7241TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.2A Power dissipation: 2.5W Case: SO8 On-state resistance: 41mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 879 шт: термін постачання 21-30 дні (днів) |
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BSS126IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT Type of transistor: N-MOSFET Technology: SIPMOS™ Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: 20V On-state resistance: 280Ω Mounting: SMD Gate charge: 1.4nC Application: automotive industry Electrical mounting: SMT |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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S25FS064SAGNFB033 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial Application: automotive Kind of package: reel; tape Type of integrated circuit: FLASH memory Case: LGA8 Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating voltage: 1.7...2V Memory: 64Mb FLASH Operating frequency: 133MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF7379TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45/90mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IRF7329TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 9.2A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AUIRF7379QTR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 16.7nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF7424TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF7425TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 899 шт: термін постачання 21-30 дні (днів) |
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IRF9317TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -16A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IRF9388TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPL65R460CFDAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.3A Power dissipation: 83.3W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.46Ω Mounting: SMD Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC4800E196F1536AAXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-196 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 155 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...85°C Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC4800E196K1536AAXQMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LFBGA-196 Memory: 276kB SRAM; 1.5MB FLASH Number of inputs/outputs: 155 Supply voltage: 3.3V DC Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 Operating temperature: -40...125°C Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar On-state resistance: 1.2mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 57W Drain current: 170A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR4615TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9250VSJXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC; 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ISP650P06NMXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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BSD235CH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.95/-0.53A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 0.415/1.221Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 2 |
на замовлення 2669 шт: термін постачання 21-30 дні (днів) |
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CY8C4025LQI-S411 | INFINEON TECHNOLOGIES |
![]() Description: CY8C4025LQI-S411 |
на замовлення 3924 шт: термін постачання 21-30 дні (днів) |
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CY8C4025LQI-S411T | INFINEON TECHNOLOGIES |
![]() Description: IC: ARM microcontroller |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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IRFP4332PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 57A Power dissipation: 360W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IDD03SG60C | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W Type of diode: Schottky rectifying Case: PG-TO252-3 Technology: CoolSiC™ 3G; SiC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2.1V Leakage current: 0.23µA Max. forward impulse current: 9.7A Kind of package: reel; tape Power dissipation: 38W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IPP051N15N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W Type of transistor: N-MOSFET Case: PG-TO220-3 Mounting: THT Polarisation: unipolar On-state resistance: 5.1mΩ Gate-source voltage: ±20V Drain current: 115A Drain-source voltage: 150V Power dissipation: 300W Kind of channel: enhancement Pulsed drain current: 480A Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
IPA80R310CEXKSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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XMC1402F064X0200AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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IPB60R125C6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
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XMC1402Q064X0200AAXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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S25FL064LABMFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFM011 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Application: automotive
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S25FL064LABMFM013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL064LABNFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGMFM013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGNFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL128LAGNFM013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S25FL512SDSMFM013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Operating frequency: 80MHz
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
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S29CD016J0MQFM010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel burst; 56MHz; PQFP80
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel burst
Operating voltage: 2.5...2.75V
Operating frequency: 56MHz
Case: PQFP80
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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BSS306NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 93mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 93mΩ
Drain current: 2.3A
Power dissipation: 0.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 10644 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
27+ | 14.73 грн |
50+ | 10.37 грн |
100+ | 8.95 грн |
171+ | 5.46 грн |
470+ | 5.15 грн |
3000+ | 4.99 грн |
BSS214NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Kind of channel: enhancement
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Drain current: 1.5A
Power dissipation: 0.5W
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 3317 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.90 грн |
37+ | 10.85 грн |
53+ | 7.52 грн |
100+ | 6.47 грн |
250+ | 5.37 грн |
288+ | 3.24 грн |
791+ | 3.06 грн |
S25HL512TDPNHB010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
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S25HL512TDPNHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 512Mb FLASH
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S25HL512TFANHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HL512TFANHM013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 2.7÷3.6V; WSON8
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating temperature: -40...125°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Application: automotive
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S25HS512TFANHI010 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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S25HS512TFANHI013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 166MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Type of integrated circuit: FLASH memory
Case: WSON8
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 166MHz
Memory: 512Mb FLASH
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BFP460H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
Collector current: 70mA
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
Collector current: 70mA
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
26+ | 15.68 грн |
29+ | 13.93 грн |
33+ | 12.03 грн |
50+ | 10.93 грн |
100+ | 10.05 грн |
105+ | 8.95 грн |
287+ | 8.47 грн |
IRF7241TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6.2A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 879 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.27 грн |
9+ | 45.76 грн |
10+ | 41.41 грн |
26+ | 36.50 грн |
71+ | 34.44 грн |
BSS126IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 21mA; 500mW; SOT23; SMT
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: 20V
On-state resistance: 280Ω
Mounting: SMD
Gate charge: 1.4nC
Application: automotive industry
Electrical mounting: SMT
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.00 грн |
S25FS064SAGNFB033 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Case: LGA8
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Application: automotive
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Case: LGA8
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Memory: 64Mb FLASH
Operating frequency: 133MHz
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IRF7379TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7329TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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AUIRF7379QTR |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
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IRF7424TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7425TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 899 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 83.56 грн |
10+ | 60.17 грн |
18+ | 52.25 грн |
25+ | 51.46 грн |
50+ | 47.50 грн |
IRF9317TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
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IRF9388TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IPL65R460CFDAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
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XMC4800E196F1536AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Kind of core: 32-bit
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XMC4800E196K1536AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...125°C
Kind of core: 32-bit
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BSB012NE2LXIXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 170A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 170A
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IRFR4615TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TLE9250VSJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
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ISP650P06NMXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 41.27 грн |
BSD235CH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
на замовлення 2669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
19+ | 21.06 грн |
22+ | 18.13 грн |
50+ | 12.35 грн |
100+ | 10.45 грн |
175+ | 5.38 грн |
478+ | 5.07 грн |
CY8C4025LQI-S411 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4025LQI-S411
Category: Infineon Technologies microcontrollers
Description: CY8C4025LQI-S411
на замовлення 3924 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
490+ | 159.44 грн |
CY8C4025LQI-S411T |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 119.37 грн |
IRFP4332PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
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IDD03SG60C |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Case: PG-TO252-3
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Leakage current: 0.23µA
Max. forward impulse current: 9.7A
Kind of package: reel; tape
Power dissipation: 38W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Case: PG-TO252-3
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Leakage current: 0.23µA
Max. forward impulse current: 9.7A
Kind of package: reel; tape
Power dissipation: 38W
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IPP051N15N5AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain current: 115A
Drain-source voltage: 150V
Power dissipation: 300W
Kind of channel: enhancement
Pulsed drain current: 480A
Technology: OptiMOS™ 5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Case: PG-TO220-3
Mounting: THT
Polarisation: unipolar
On-state resistance: 5.1mΩ
Gate-source voltage: ±20V
Drain current: 115A
Drain-source voltage: 150V
Power dissipation: 300W
Kind of channel: enhancement
Pulsed drain current: 480A
Technology: OptiMOS™ 5
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В кошику
од. на суму грн.
IPA80R310CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 136.42 грн |
250+ | 114.01 грн |