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DSS2X61-01A DSS2X61-01A IXYS DSS2x61-01A.pdf Description: DIODE MOD SCHOT 100V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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IXGM20N60A IXYS Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXYX25N250CV1HV IXYX25N250CV1HV IXYS littelfuse-discrete-igbts-ixy-25n250cv1-datasheet?assetguid=20545de9-8196-4ebe-b113-81f68338f995 Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+4493.94 грн
30+3225.62 грн
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IXTA08N100D2HV IXTA08N100D2HV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta08n100d2hv_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
50+269.50 грн
Мінімальне замовлення: 50
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N1263JK160 IXYS media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf Description: SCR 1.6KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.6 kV
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N1263JK180 IXYS media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf Description: SCR 1.8KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.8 kV
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N1467NC200 IXYS Description: SCR 2KV 2912A W11
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N1467NC260 N1467NC260 IXYS Description: SCR 2.6KV 2912A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23600A @ 50Hz
Current - On State (It (AV)) (Max): 1467 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.69 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2912 A
Voltage - Off State: 2.6 kV
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N1802NC120 IXYS Description: SCR 1.2KV 3592A W11
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N1802NC160 IXYS Description: SCR 1.6KV 3592A W11
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DSP45-16AZ-TUB DSP45-16AZ-TUB IXYS Littelfuse-Power-Semiconductors-DSP45-16AZ-Datasheet?assetguid=1060e112-2a21-4266-a8d9-5dbef72572b1 Description: DIODE STANDARD 1600V 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+755.55 грн
30+428.49 грн
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IXTA05N100HV IXTA05N100HV IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+419.27 грн
50+212.35 грн
100+193.91 грн
500+151.67 грн
1000+145.78 грн
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IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS 238_IXGA48N60A3.pdf Description: IGBT PT 600V 120A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)
1+425.26 грн
10+274.14 грн
100+197.27 грн
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IXBT42N170-TRL IXYS Description: IGBT 1700V 80A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 37ns/340ns
Test Condition: 850V, 42A, 10Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
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VBO40-08NO6 VBO40-08NO6 IXYS VBO40-08NO6.pdf Description: BRIDGE RECT 1P 800V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
1+2217.02 грн
10+1897.44 грн
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IXFN44N50U2 IXFN44N50U2 IXYS Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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IXTH36P15P IXTH36P15P IXYS DS99791D(IXTA-P-H-Q36P15P).pdf Description: MOSFET P-CH 150V 36A TO247
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P0848YC06B IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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IXTA44P15T-TRL IXTA44P15T-TRL IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 23200 шт:
термін постачання 21-31 дні (днів)
800+236.36 грн
Мінімальне замовлення: 800
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IXYH40N120A4 IXYH40N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXYT40N120A4HV IXYT40N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXG100IF1200HF IXYS Description: DISC IGBT XPT-GENX4 TO-247AD
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N0465WN160 IXYS Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
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N3012ZC200 IXYS littelfusediscretethyristorsphasecontroln3012zc20datasheetpdf.pdf Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
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N3012ZC260 IXYS Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
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IXFH220N06T3 IXFH220N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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IXFD15N100-8X IXYS Description: MOSFET N-CH
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IXFJ15N100Q IXYS Description: MOSFET N-CH TO-220
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IXFR15N100Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXTP8N70X2M IXTP8N70X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+356.81 грн
50+176.12 грн
100+159.94 грн
500+123.51 грн
1000+114.98 грн
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W0642WC160 IXYS Description: RECTIFIER DIODE
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IXBT2N250-TR IXYS Description: IGBT 2500V 5A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 30ns/70ns
Test Condition: 2000V, 2A, 47Ohm, 15V
Gate Charge: 10.6 nC
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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MMIX4B22N300 MMIX4B22N300 IXYS littelfuse-discrete-igbts-mmix4b22n300-datasheet?assetguid=81dd2495-4dd4-4c93-b49a-6dea5b917706 Description: IGBT ARR FBRIDGE 3000V 38A 24SMD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+7207.24 грн
10+5709.29 грн
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IXIDM1401_1505_M IXYS IXIDM1401_M_12Sep2017_DS.pdf Description: IGBT IPM 15V 10A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1403_1505_M IXYS IXIDM1403_1505_M_DS.pdf Description: IGBT IPM 15V 30A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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IXIDM1401 IXYS IXIDM1401_PB.pdf Description: IGBT IPM 15V 10A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
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IXIDM1401_1515_M IXYS IXIDM1401_M_12Sep2017_DS.pdf Description: IGBT IPM 15V 10A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1401_1515_O IXYS IXIDM1401_O_12Sep2017_DS.pdf Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1403_1515_M IXYS IXIDM140(1,3)_Series_DS.pdf Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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IXIDM1403_1515_O IXYS IXIDM140(1,3)_Series_DS.pdf Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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W3842MC240 IXYS w3842mc.pdf Description: DIODE STANDARD 2400V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
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W3842MC280 IXYS w3842mc.pdf Description: DIODE STANDARD 2800V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
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IXXH40N65C4D1 IXXH40N65C4D1 IXYS littelfuse-discrete-igbts-ixxh40n65c4d1-datasheet?assetguid=ad9ee658-c83b-4415-9c5f-f037396e82d7 Description: IGBT PT 650V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/100ns
Switching Energy: 1.6mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 215 A
Power - Max: 455 W
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IXTC36P15P IXTC36P15P IXYS Description: MOSFET P-CH 150V 22A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
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DNA30EM2200PZ-TRL DNA30EM2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+194.28 грн
Мінімальне замовлення: 800
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DNA30EM2200PZ-TRL DNA30EM2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
1+421.84 грн
10+273.81 грн
100+225.22 грн
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DSEP29-12B DSEP29-12B IXYS Description: DIODE STANDARD 1200V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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IXYP30N65C3 IXYP30N65C3 IXYS media?resourcetype=datasheets&amp;itemid=15441231-dbab-4158-976c-a30abffe6233&amp;filename=littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
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R1446NC12E IXYS Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+33420.44 грн
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R1446NC12D IXYS Description: SCR 1.2KV 2940A W11
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R1446NC12C IXYS media?resourcetype=datasheets&itemid=95ee1977-9d63-4928-b1da-727c32c0a486&filename=littelfuse_discrete_thyristors_fast_thyristors_r1446nc12__datasheet.pdf Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+37321.40 грн
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IXYX110N120A4 IXYX110N120A4 IXYS IXYX110N120A4_DS.pdf Description: IGBT PT 1200V 375A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+2288.90 грн
30+1431.29 грн
120+1376.02 грн
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IXYK110N120A4 IXYK110N120A4 IXYS Description: IGBT PT 1200V 375A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
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IXYN110N120A4 IXYN110N120A4 IXYS IXYN110N120A4_DS.pdf Description: IGBT PT 1200V 275A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 302 шт:
термін постачання 21-31 дні (днів)
1+2882.72 грн
10+2065.94 грн
100+1858.39 грн
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IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Description: MOSFET N-CH 850V 20A TO263HV
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IXFJ20N85X IXFJ20N85X IXYS DS100772A(IXFJ20N85X).pdf Description: MOSFET N-CH 850V 9.5A ISO TO247
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IXFN170N65X2 IXFN170N65X2 IXYS littelfuse-discrete-mosfets-ixfn170n65x2-datasheet?assetguid=2a189d3c-4251-4340-a4a2-11dcae55c724 Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+4154.24 грн
10+3049.68 грн
100+2945.11 грн
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N6012ZD020 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 200V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 200 V
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MCB40P1200LB-TUB IXYS media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+19439.78 грн
10+17928.86 грн
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IXFP36N20X3M IXFP36N20X3M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
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DSS2X61-01A DSS2x61-01A.pdf
DSS2X61-01A
Виробник: IXYS
Description: DIODE MOD SCHOT 100V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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IXGM20N60A
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXYX25N250CV1HV littelfuse-discrete-igbts-ixy-25n250cv1-datasheet?assetguid=20545de9-8196-4ebe-b113-81f68338f995
IXYX25N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4493.94 грн
30+3225.62 грн
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IXTA08N100D2HV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta08n100d2hv_datasheet.pdf.pdf
IXTA08N100D2HV
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+269.50 грн
Мінімальне замовлення: 50
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N1263JK160 media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.6KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.6 kV
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N1263JK180 media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.8 kV
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N1467NC200
Виробник: IXYS
Description: SCR 2KV 2912A W11
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N1467NC260
N1467NC260
Виробник: IXYS
Description: SCR 2.6KV 2912A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23600A @ 50Hz
Current - On State (It (AV)) (Max): 1467 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.69 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2912 A
Voltage - Off State: 2.6 kV
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N1802NC120
Виробник: IXYS
Description: SCR 1.2KV 3592A W11
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N1802NC160
Виробник: IXYS
Description: SCR 1.6KV 3592A W11
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DSP45-16AZ-TUB Littelfuse-Power-Semiconductors-DSP45-16AZ-Datasheet?assetguid=1060e112-2a21-4266-a8d9-5dbef72572b1
DSP45-16AZ-TUB
Виробник: IXYS
Description: DIODE STANDARD 1600V 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+755.55 грн
30+428.49 грн
В кошику  од. на суму  грн.
IXTA05N100HV littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100HV
Виробник: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+419.27 грн
50+212.35 грн
100+193.91 грн
500+151.67 грн
1000+145.78 грн
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IXGA48N60A3-TRL 238_IXGA48N60A3.pdf
IXGA48N60A3-TRL
Виробник: IXYS
Description: IGBT PT 600V 120A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+425.26 грн
10+274.14 грн
100+197.27 грн
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IXBT42N170-TRL
Виробник: IXYS
Description: IGBT 1700V 80A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 37ns/340ns
Test Condition: 850V, 42A, 10Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
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VBO40-08NO6 VBO40-08NO6.pdf
VBO40-08NO6
Виробник: IXYS
Description: BRIDGE RECT 1P 800V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2217.02 грн
10+1897.44 грн
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IXFN44N50U2
IXFN44N50U2
Виробник: IXYS
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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IXTH36P15P DS99791D(IXTA-P-H-Q36P15P).pdf
IXTH36P15P
Виробник: IXYS
Description: MOSFET P-CH 150V 36A TO247
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P0848YC06B media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Виробник: IXYS
Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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IXTA44P15T-TRL littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 23200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+236.36 грн
Мінімальне замовлення: 800
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IXYH40N120A4 littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf
IXYH40N120A4
Виробник: IXYS
Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXYT40N120A4HV littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf
IXYT40N120A4HV
Виробник: IXYS
Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXG100IF1200HF
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
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N0465WN160
Виробник: IXYS
Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
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N3012ZC200 littelfusediscretethyristorsphasecontroln3012zc20datasheetpdf.pdf
Виробник: IXYS
Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
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N3012ZC260
Виробник: IXYS
Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
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IXFH220N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf
IXFH220N06T3
Виробник: IXYS
Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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IXFD15N100-8X
Виробник: IXYS
Description: MOSFET N-CH
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IXFJ15N100Q
Виробник: IXYS
Description: MOSFET N-CH TO-220
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IXFR15N100Q
Виробник: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXTP8N70X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP8N70X2M
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.81 грн
50+176.12 грн
100+159.94 грн
500+123.51 грн
1000+114.98 грн
В кошику  од. на суму  грн.
W0642WC160
Виробник: IXYS
Description: RECTIFIER DIODE
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IXBT2N250-TR
Виробник: IXYS
Description: IGBT 2500V 5A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 30ns/70ns
Test Condition: 2000V, 2A, 47Ohm, 15V
Gate Charge: 10.6 nC
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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MMIX4B22N300 littelfuse-discrete-igbts-mmix4b22n300-datasheet?assetguid=81dd2495-4dd4-4c93-b49a-6dea5b917706
MMIX4B22N300
Виробник: IXYS
Description: IGBT ARR FBRIDGE 3000V 38A 24SMD
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7207.24 грн
10+5709.29 грн
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IXIDM1401_1505_M IXIDM1401_M_12Sep2017_DS.pdf
Виробник: IXYS
Description: IGBT IPM 15V 10A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1403_1505_M IXIDM1403_1505_M_DS.pdf
Виробник: IXYS
Description: IGBT IPM 15V 30A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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IXIDM1401 IXIDM1401_PB.pdf
Виробник: IXYS
Description: IGBT IPM 15V 10A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
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IXIDM1401_1515_M IXIDM1401_M_12Sep2017_DS.pdf
Виробник: IXYS
Description: IGBT IPM 15V 10A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1401_1515_O IXIDM1401_O_12Sep2017_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1403_1515_M IXIDM140(1,3)_Series_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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IXIDM1403_1515_O IXIDM140(1,3)_Series_DS.pdf
Виробник: IXYS
Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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W3842MC240 w3842mc.pdf
Виробник: IXYS
Description: DIODE STANDARD 2400V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
товару немає в наявності
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W3842MC280 w3842mc.pdf
Виробник: IXYS
Description: DIODE STANDARD 2800V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
товару немає в наявності
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IXXH40N65C4D1 littelfuse-discrete-igbts-ixxh40n65c4d1-datasheet?assetguid=ad9ee658-c83b-4415-9c5f-f037396e82d7
IXXH40N65C4D1
Виробник: IXYS
Description: IGBT PT 650V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/100ns
Switching Energy: 1.6mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 215 A
Power - Max: 455 W
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IXTC36P15P
IXTC36P15P
Виробник: IXYS
Description: MOSFET P-CH 150V 22A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
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DNA30EM2200PZ-TRL media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet
DNA30EM2200PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+194.28 грн
Мінімальне замовлення: 800
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DNA30EM2200PZ-TRL media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet
DNA30EM2200PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+421.84 грн
10+273.81 грн
100+225.22 грн
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DSEP29-12B
DSEP29-12B
Виробник: IXYS
Description: DIODE STANDARD 1200V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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IXYP30N65C3 media?resourcetype=datasheets&amp;itemid=15441231-dbab-4158-976c-a30abffe6233&amp;filename=littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf
IXYP30N65C3
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
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R1446NC12E
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+33420.44 грн
В кошику  од. на суму  грн.
R1446NC12D
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
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R1446NC12C media?resourcetype=datasheets&itemid=95ee1977-9d63-4928-b1da-727c32c0a486&filename=littelfuse_discrete_thyristors_fast_thyristors_r1446nc12__datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+37321.40 грн
В кошику  од. на суму  грн.
IXYX110N120A4 IXYX110N120A4_DS.pdf
IXYX110N120A4
Виробник: IXYS
Description: IGBT PT 1200V 375A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2288.90 грн
30+1431.29 грн
120+1376.02 грн
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IXYK110N120A4
IXYK110N120A4
Виробник: IXYS
Description: IGBT PT 1200V 375A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
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IXYN110N120A4 IXYN110N120A4_DS.pdf
IXYN110N120A4
Виробник: IXYS
Description: IGBT PT 1200V 275A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 302 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2882.72 грн
10+2065.94 грн
100+1858.39 грн
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IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Виробник: IXYS
Description: MOSFET N-CH 850V 20A TO263HV
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IXFJ20N85X DS100772A(IXFJ20N85X).pdf
IXFJ20N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 9.5A ISO TO247
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IXFN170N65X2 littelfuse-discrete-mosfets-ixfn170n65x2-datasheet?assetguid=2a189d3c-4251-4340-a4a2-11dcae55c724
IXFN170N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4154.24 грн
10+3049.68 грн
100+2945.11 грн
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N6012ZD020 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 200V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 200 V
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MCB40P1200LB-TUB media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet
Виробник: IXYS
Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19439.78 грн
10+17928.86 грн
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IXFP36N20X3M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf
IXFP36N20X3M
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
товару немає в наявності
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