Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXGM20N60 | IXYS |
Description: IGBT 600V 40A TO-204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 2mJ (on), 3.2mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W |
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IXGM25N100A | IXYS |
Description: IGBT 1000V 50A 200W TO204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 180 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
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IXTY1N120PTRL | IXYS | Description: MOSFET N-CH 1200V 1A TO252 |
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IXTA1N120P-TRL | IXYS | Description: MOSFET N-CH 1200V 1A TO263 |
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DSP45-12AZ-TUB | IXYS |
Description: DIODE GEN PURP 1.2KV 45A TO268AA Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 18pF @ 400V, 1MHz Current - Average Rectified (Io): 45A Supplier Device Package: TO-268AA (D3Pak-HV) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
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CLA30E1200PB | IXYS | Description: SCR 1.2KV 47A TO220AB |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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MEK95-06DA | IXYS |
Description: DIODE MODULE GP 600V 95A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 95A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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N1159NC380 | IXYS | Description: SCR 3.8KV 2268A W11 |
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N1159NC420 | IXYS | Description: SCR 4.2KV 2268A W11 |
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MEA75-12DA | IXYS |
Description: DIODE MOD GP 1.2KV 75A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 75A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A Current - Reverse Leakage @ Vr: 2 mA @ 1200 V |
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MEK150-04DA | IXYS |
Description: DIODE MOD GP 400V 150A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 2 mA @ 400 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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MDD44-16N1B | IXYS |
Description: DIODE MOD GP 1.6KV 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1600 V |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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MDMA660U1600PTEH | IXYS |
Description: BIPOLARMODULE-BRIDGE RECTIFIER E Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E3 Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 660 A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
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MDMA660U1600PT-PC | IXYS |
Description: MDMA660U1600PTEH-PC Packaging: Box |
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MDMA900U1600PTEH | IXYS |
Description: BIPOLARMODULE-BRIDGE RECTIFIER E Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E3 Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 900 A Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
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MDMA900U1600PT-PC | IXYS | Description: MDMA900U1600PTEH-PC |
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VVZ24-12IO1 | IXYS | Description: BRIDGE RECT 3 PHASE 1200V 27A |
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DMA40U1800GU | IXYS |
Description: POWER DIODE DISCRETES-RECTIFIER Packaging: Tube Package / Case: 5-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: GUFP Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V |
на замовлення 2374 шт: термін постачання 21-31 дні (днів) |
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DMA90U1800LB-TUB | IXYS |
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B Packaging: Tube Package / Case: 9-SMD Module Mounting Type: Surface Mount Diode Type: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: ISOPLUS-SMPD™.B Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 90 A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1800 V |
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IXGA28N60A3 | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/300ns Switching Energy: 700µJ (on), 2.4mJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 170 A Power - Max: 190 W |
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N1718NC180 | IXYS | Description: SCR 1.8KV 3450A W11 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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N1718NC120 | IXYS | Description: SCR 1.2KV 3450A W11 |
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MCC95-08I01B | IXYS |
Description: DIODE MOD GP 800V 116A TO240AA Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 116A Supplier Device Package: TO-240AA Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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IXTA110N12T2 | IXYS |
Description: MOSFET N-CH 120V 110A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V |
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IXXH80N65B4D1 | IXYS |
Description: IGBT PT 650V 180A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/112ns Switching Energy: 3.36mJ (on), 1.83mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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IXFX52N100X | IXYS | Description: MOSFET N-CH 1000V 52A PLUS247 |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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MDD95-16N1B | IXYS | Description: DIODE MODULE 1.6KV 120A TO240AA |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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IXFH240N15X3 | IXYS | Description: MOSFET N-CH 150V 240A TO247 |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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IXSK30N60CD1 | IXYS |
Description: IGBT 600V 55A 200W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-264AA (IXSK) Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 700µJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
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IXSK30N60BD1 | IXYS |
Description: IGBT 600V 55A 200W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A Supplier Device Package: TO-264AA (IXSK) Td (on/off) @ 25°C: 30ns/150ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 200 W |
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IXYH100N65A3 | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 24ns/174ns Switching Energy: 3.15mJ (on), 2.2mJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 178 nC Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 470 W |
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IXGH120N30B3 | IXYS |
Description: IGBT 300V 75A 540W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 225 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 480 A Power - Max: 540 W |
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DSP8-08S-TRL | IXYS |
Description: DIODE ARRAY GP 800V 11A TO263AA Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 11A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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DSP8-08S-TUB | IXYS |
Description: DIODE ARRAY GP 800V 8A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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IXTA2R4N120P-TRL | IXYS | Description: MOSFET N-CH 1200V 2.4A TO263 |
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IXTA70N075T2-TRL | IXYS |
Description: MOSFET N-CH 75V 70A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V |
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IXA30RG1200DHG-TRR | IXYS | Description: IGBT PHASELEG 1200V 43A SMPD |
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IXA30RG1200DHG-TUB | IXYS | Description: IGBT PHASELEG 1200V 30A SMPD |
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MCMA65P1800TA | IXYS | Description: SCR MODULE 1.8KV 65A TO240AA |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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MDD95-12N1B | IXYS | Description: DIODE MODULE 1.2KV 120A TO240AA |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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MDD95-22N1B | IXYS | Description: DIODE MODULE 2.2KV 120A TO240AA |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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MDD95-18N1B | IXYS |
Description: DIODE MODULE 1.8KV 120A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 1800 V |
на замовлення 103 шт: термін постачання 21-31 дні (днів) |
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MDD95-14N1B | IXYS | Description: DIODE MODULE 1.4KV 120A TO240AA |
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MDD95-08N1B | IXYS | Description: DIODE MODULE 800V 120A TO240AA |
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MDD95-20N1B | IXYS | Description: DIODE MODULE 2KV 120A TO240AA |
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IXYP60N65A5 | IXYS |
Description: IGBT PT 650V 134A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A Supplier Device Package: TO-220 (IXYP) IGBT Type: PT Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W |
на замовлення 202 шт: термін постачання 21-31 дні (днів) |
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IXTM5N100 | IXYS | Description: MOSFET N-CH 1000V 5A TO204AA |
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IXTM5N100A | IXYS | Description: MOSFET N-CH 1000V 5A TO204AA |
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CLA50E1200TC-TRL | IXYS |
Description: SCR 1.2KV 79A TO268AA Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 50 µA Supplier Device Package: TO-268AA Part Status: Active Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.2 kV |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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CLA50E1200TC-TRL | IXYS |
Description: SCR 1.2KV 79A TO268AA Packaging: Cut Tape (CT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A Current - On State (It (AV)) (Max): 50 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 50 µA Supplier Device Package: TO-268AA Part Status: Active Current - On State (It (RMS)) (Max): 79 A Voltage - Off State: 1.2 kV |
на замовлення 1422 шт: термін постачання 21-31 дні (днів) |
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IXFA220N06T3 | IXYS |
Description: MOSFET N-CH 60V 220A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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MMIX1Y82N120C3H1 | IXYS | Description: DISC IGBT SMPD PKG-STANDARD SMPD |
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CLA20EF1200PZ-TRL | IXYS | Description: SCR 1.2KV 35A TO263 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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CLA20EF1200PB | IXYS | Description: SCR 1.2KV 35MA TO220 |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
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CLA20EF1200PZ-TUB | IXYS |
Description: SCR 1.2KV 35A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.4 V Supplier Device Package: TO-263HV Current - On State (It (RMS)) (Max): 35 A Voltage - Off State: 1.2 kV |
на замовлення 101 шт: термін постачання 21-31 дні (днів) |
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IXG70IF1200NA | IXYS | Description: IGBT MODULE - OTHERS SMPD-B |
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DSA30C150PC-TUB | IXYS | Description: POWER DIODE DISCRETES-SCHOTTKY T |
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IXYH120N65A5 | IXYS |
Description: IGBT 650V 120A X5 XPT TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 45ns/370ns Switching Energy: 1.25mJ (on), 3.2mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 314 nC Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 790 A Power - Max: 830 W |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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DSA30C150PC-TRL | IXYS | Description: POWER DIODE DISCRETES-SCHOTTKY T |
товар відсутній |
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DSA30C200PC-TRL | IXYS | Description: POWER DIODE DISCRETES-SCHOTTKY T |
товар відсутній |
IXGM20N60 |
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100A |
Виробник: IXYS
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
DSP45-12AZ-TUB |
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
CLA30E1200PB |
Виробник: IXYS
Description: SCR 1.2KV 47A TO220AB
Description: SCR 1.2KV 47A TO220AB
на замовлення 71 шт:
термін постачання 21-31 дні (днів)MEK95-06DA |
Виробник: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2265.09 грн |
36+ | 1808.3 грн |
MEA75-12DA |
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
товар відсутній
MEK150-04DA |
Виробник: IXYS
Description: DIODE MOD GP 400V 150A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Description: DIODE MOD GP 400V 150A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3051.66 грн |
36+ | 2011.52 грн |
MDD44-16N1B |
Виробник: IXYS
Description: DIODE MOD GP 1.6KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
Description: DIODE MOD GP 1.6KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2079.79 грн |
36+ | 1660.7 грн |
MDMA660U1600PTEH |
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
MDMA900U1600PTEH |
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
DMA40U1800GU |
Виробник: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 2374 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1480.87 грн |
10+ | 1267.76 грн |
100+ | 1108.79 грн |
500+ | 887.94 грн |
DMA90U1800LB-TUB |
Виробник: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
товар відсутній
IXGA28N60A3 |
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
товар відсутній
N1718NC180 |
Виробник: IXYS
Description: SCR 1.8KV 3450A W11
Description: SCR 1.8KV 3450A W11
на замовлення 12 шт:
термін постачання 21-31 дні (днів)MCC95-08I01B |
Виробник: IXYS
Description: DIODE MOD GP 800V 116A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 116A
Supplier Device Package: TO-240AA
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MOD GP 800V 116A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 116A
Supplier Device Package: TO-240AA
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
товар відсутній
IXTA110N12T2 |
Виробник: IXYS
Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
товар відсутній
IXXH80N65B4D1 |
Виробник: IXYS
Description: IGBT PT 650V 180A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Description: IGBT PT 650V 180A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
на замовлення 955 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 821.75 грн |
30+ | 640.28 грн |
120+ | 602.6 грн |
510+ | 512.5 грн |
IXFX52N100X |
Виробник: IXYS
Description: MOSFET N-CH 1000V 52A PLUS247
Description: MOSFET N-CH 1000V 52A PLUS247
на замовлення 16 шт:
термін постачання 21-31 дні (днів)MDD95-16N1B |
Виробник: IXYS
Description: DIODE MODULE 1.6KV 120A TO240AA
Description: DIODE MODULE 1.6KV 120A TO240AA
на замовлення 128 шт:
термін постачання 21-31 дні (днів)IXFH240N15X3 |
Виробник: IXYS
Description: MOSFET N-CH 150V 240A TO247
Description: MOSFET N-CH 150V 240A TO247
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)IXSK30N60CD1 |
Виробник: IXYS
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXSK30N60BD1 |
Виробник: IXYS
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
товар відсутній
IXYH100N65A3 |
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
товар відсутній
IXGH120N30B3 |
Виробник: IXYS
Description: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
Description: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
товар відсутній
DSP8-08S-TRL |
Виробник: IXYS
Description: DIODE ARRAY GP 800V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE ARRAY GP 800V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
DSP8-08S-TUB |
Виробник: IXYS
Description: DIODE ARRAY GP 800V 8A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE ARRAY GP 800V 8A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
IXTA70N075T2-TRL |
Виробник: IXYS
Description: MOSFET N-CH 75V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Description: MOSFET N-CH 75V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
товар відсутній
MCMA65P1800TA |
Виробник: IXYS
Description: SCR MODULE 1.8KV 65A TO240AA
Description: SCR MODULE 1.8KV 65A TO240AA
на замовлення 67 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2525.46 грн |
10+ | 2243.09 грн |
MDD95-12N1B |
Виробник: IXYS
Description: DIODE MODULE 1.2KV 120A TO240AA
Description: DIODE MODULE 1.2KV 120A TO240AA
на замовлення 26 шт:
термін постачання 21-31 дні (днів)MDD95-22N1B |
Виробник: IXYS
Description: DIODE MODULE 2.2KV 120A TO240AA
Description: DIODE MODULE 2.2KV 120A TO240AA
на замовлення 36 шт:
термін постачання 21-31 дні (днів)MDD95-18N1B |
Виробник: IXYS
Description: DIODE MODULE 1.8KV 120A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1800 V
Description: DIODE MODULE 1.8KV 120A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1800 V
на замовлення 103 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3030.55 грн |
10+ | 2723.07 грн |
100+ | 2364.33 грн |
IXYP60N65A5 |
Виробник: IXYS
Description: IGBT PT 650V 134A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
Description: IGBT PT 650V 134A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 202 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 341.68 грн |
50+ | 260.61 грн |
100+ | 223.38 грн |
CLA50E1200TC-TRL |
Виробник: IXYS
Description: SCR 1.2KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
400+ | 305.59 грн |
CLA50E1200TC-TRL |
Виробник: IXYS
Description: SCR 1.2KV 79A TO268AA
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 79A TO268AA
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-268AA
Part Status: Active
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.2 kV
на замовлення 1422 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 587.97 грн |
10+ | 485.03 грн |
100+ | 404.2 грн |
IXFA220N06T3 |
Виробник: IXYS
Description: MOSFET N-CH 60V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Description: MOSFET N-CH 60V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 344.02 грн |
50+ | 262.5 грн |
100+ | 224.99 грн |
CLA20EF1200PZ-TRL |
Виробник: IXYS
Description: SCR 1.2KV 35A TO263
Description: SCR 1.2KV 35A TO263
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)CLA20EF1200PB |
Виробник: IXYS
Description: SCR 1.2KV 35MA TO220
Description: SCR 1.2KV 35MA TO220
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)CLA20EF1200PZ-TUB |
Виробник: IXYS
Description: SCR 1.2KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.4 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.4 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.2 kV
на замовлення 101 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 247.85 грн |
50+ | 189.07 грн |
100+ | 162.06 грн |
IXYH120N65A5 |
Виробник: IXYS
Description: IGBT 650V 120A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 45ns/370ns
Switching Energy: 1.25mJ (on), 3.2mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
Description: IGBT 650V 120A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 45ns/370ns
Switching Energy: 1.25mJ (on), 3.2mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
на замовлення 41 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 720.89 грн |
30+ | 553.9 грн |