Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13491) > Сторінка 206 з 225
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TLP5705H(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP5705H(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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TLP5705H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5705H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5705H(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP5705H(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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TPH3R70APL1,LQ | Toshiba Semiconductor and Storage |
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH3R70APL1,LQ | Toshiba Semiconductor and Storage |
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V |
на замовлення 8789 шт: термін постачання 21-31 дні (днів) |
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CUHS20F40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 2A US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 40 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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CUHS20F40,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 2A US2HPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 40 V |
на замовлення 26254 шт: термін постачання 21-31 дні (днів) |
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TC7SU04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.7V ~ 4.8V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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TC7SU04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.7V ~ 4.8V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 23313 шт: термін постачання 21-31 дні (днів) |
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RN1411,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1411,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2411,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2411,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Qualification: AEC-Q101 |
на замовлення 5940 шт: термін постачання 21-31 дні (днів) |
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RN2415,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2415,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 5970 шт: термін постачання 21-31 дні (днів) |
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RN2405,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2405,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2409,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2409,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1417,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1417,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1412,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1412,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2404,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2404,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1410,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1410,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TK60S10N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 60A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK60S10N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 60A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 7619 шт: термін постачання 21-31 дні (днів) |
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| MN07ACA14T | Toshiba Semiconductor and Storage |
Description: MN07 NAS B2B 14TBPackaging: Bulk Memory Size: 14TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MG07ACP14TE | Toshiba Semiconductor and Storage |
Description: MG07 14TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 14TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TB67S580FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TB67S580FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3708 шт: термін постачання 21-31 дні (днів) |
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TB67S581FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S581FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4386 шт: термін постачання 21-31 дні (днів) |
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TLP266J(TPL,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS TPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(TPL,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS TPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 8132 шт: термін постачання 21-31 дні (днів) |
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TLP5832(D4-TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5832(D4-TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5832(TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP5832(TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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TLP5832(D4,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tube Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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TLP5832(E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tube Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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TLP4176A(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 105°C Termination Style: Gull Wing Load Current: 500 mA Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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TLP4176A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 105°C Termination Style: Gull Wing Load Current: 500 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLP4176A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 105°C Termination Style: Gull Wing Load Current: 500 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms |
на замовлення 5007 шт: термін постачання 21-31 дні (днів) |
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2SK2989(TPE6,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2989,F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2989,T6F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7WH32FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: US8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7WH32FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: US8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 4887 шт: термін постачання 21-31 дні (днів) |
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| 2SA1483-Y(TE12L,F) | Toshiba Semiconductor and Storage |
Description: 2SA1483-Y(TE12L,F) Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PW-MINI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MG06SCA600A | Toshiba Semiconductor and Storage |
Description: MG06 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MG06SCA600E | Toshiba Semiconductor and Storage |
Description: MG06 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MG0GSCA800A | Toshiba Semiconductor and Storage |
Description: MG06 8TB Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| TLP5705H(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| TLP5705H(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.04 грн |
| 10+ | 97.80 грн |
| 100+ | 69.81 грн |
| 500+ | 55.20 грн |
| TLP5705H(D4TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 64.13 грн |
| TLP5705H(D4TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.22 грн |
| 10+ | 100.96 грн |
| 100+ | 72.31 грн |
| 500+ | 57.27 грн |
| TLP5705H(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
товару немає в наявності
В кошику
од. на суму грн.
| TLP5705H(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.22 грн |
| 10+ | 100.96 грн |
| 100+ | 72.31 грн |
| 500+ | 57.27 грн |
| TPH3R70APL1,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 50.64 грн |
| TPH3R70APL1,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Description: 150V U-MOS IX-H SOP-ADVANCE(N) 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
на замовлення 8789 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.63 грн |
| 10+ | 110.69 грн |
| 100+ | 75.22 грн |
| 500+ | 56.34 грн |
| 1000+ | 51.76 грн |
| 2000+ | 47.91 грн |
| CUHS20F40,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.74 грн |
| 6000+ | 6.18 грн |
| 9000+ | 5.95 грн |
| CUHS20F40,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
на замовлення 26254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.86 грн |
| 15+ | 23.12 грн |
| 100+ | 14.87 грн |
| 500+ | 10.47 грн |
| 1000+ | 9.34 грн |
| TC7SU04FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.74 грн |
| 6000+ | 4.97 грн |
| 15000+ | 4.42 грн |
| TC7SU04FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 23313 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 31.09 грн |
| 16+ | 22.12 грн |
| 25+ | 19.33 грн |
| 100+ | 11.75 грн |
| 250+ | 9.73 грн |
| 500+ | 7.78 грн |
| 1000+ | 5.87 грн |
| RN1411,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.47 грн |
| RN1411,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| RN2411,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| RN2411,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 5940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.04 грн |
| 23+ | 14.55 грн |
| 100+ | 9.10 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.58 грн |
| RN2415,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| RN2415,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.04 грн |
| 23+ | 14.55 грн |
| 100+ | 9.10 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.58 грн |
| RN2405,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.47 грн |
| RN2405,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.04 грн |
| 23+ | 14.55 грн |
| 100+ | 9.10 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.58 грн |
| RN2409,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.19 грн |
| 6000+ | 4.50 грн |
| RN2409,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| RN1417,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.47 грн |
| RN1417,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| RN1412,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.47 грн |
| RN1412,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| RN2404,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.47 грн |
| RN2404,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| RN1410,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| 6000+ | 4.47 грн |
| RN1410,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| RN1413,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.16 грн |
| RN1413,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| TK60S10N1L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 48.85 грн |
| 4000+ | 45.19 грн |
| TK60S10N1L,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
на замовлення 7619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.18 грн |
| 10+ | 100.54 грн |
| 100+ | 70.27 грн |
| 500+ | 53.46 грн |
| 1000+ | 51.90 грн |
| MN07ACA14T |
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Виробник: Toshiba Semiconductor and Storage
Description: MN07 NAS B2B 14TB
Packaging: Bulk
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MN07 NAS B2B 14TB
Packaging: Bulk
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MG07ACP14TE |
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Виробник: Toshiba Semiconductor and Storage
Description: MG07 14TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG07 14TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| TB67S580FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
В кошику
од. на суму грн.
| TB67S580FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3708 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.90 грн |
| 10+ | 85.24 грн |
| 25+ | 77.44 грн |
| 100+ | 64.61 грн |
| 250+ | 60.78 грн |
| 500+ | 58.46 грн |
| 1000+ | 55.63 грн |
| TB67S581FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 59.42 грн |
| TB67S581FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4386 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.90 грн |
| 10+ | 85.24 грн |
| 25+ | 77.44 грн |
| 100+ | 64.61 грн |
| 250+ | 60.78 грн |
| 500+ | 58.46 грн |
| 1000+ | 55.63 грн |
| TLP266J(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS T
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.44 грн |
| 6000+ | 24.23 грн |
| TLP266J(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS T
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 8132 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.63 грн |
| 10+ | 49.65 грн |
| 100+ | 33.65 грн |
| 500+ | 25.66 грн |
| 1000+ | 23.85 грн |
| TLP5832(D4-TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 81.17 грн |
| TLP5832(D4-TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.58 грн |
| 10+ | 146.61 грн |
| 100+ | 108.09 грн |
| 500+ | 87.18 грн |
| TLP5832(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
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| TLP5832(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.58 грн |
| 10+ | 146.61 грн |
| 100+ | 108.09 грн |
| 500+ | 87.18 грн |
| TLP5832(D4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 75 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.58 грн |
| 75+ | 111.63 грн |
| TLP5832(E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 75 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.58 грн |
| 75+ | 111.63 грн |
| TLP4176A(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.31 грн |
| 10+ | 134.64 грн |
| 100+ | 98.61 грн |
| TLP4176A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 77.30 грн |
| 5000+ | 71.65 грн |
| TLP4176A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
на замовлення 5007 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.50 грн |
| 10+ | 124.09 грн |
| 100+ | 95.56 грн |
| 500+ | 77.89 грн |
| 1000+ | 74.05 грн |
| 2SK2989(TPE6,F,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
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| 2SK2989,F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
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од. на суму грн.
| 2SK2989,T6F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
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| TC7WH32FK,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.09 грн |
| TC7WH32FK,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 4887 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.82 грн |
| 39+ | 8.73 грн |
| 44+ | 7.68 грн |
| 100+ | 6.14 грн |
| 250+ | 5.63 грн |
| 500+ | 5.31 грн |
| 1000+ | 4.97 грн |
| 2SA1483-Y(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
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| MG06SCA600A |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
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| MG06SCA600E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
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од. на суму грн.












