Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13489) > Сторінка 207 з 225
| Фото | Назва | Виробник | Інформація |
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TLP4176A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Termination Style: Gull Wing Load Current: 500 mA Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms Operating Temperature: -40°C ~ 105°C |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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2SK2989(TPE6,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
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2SK2989,F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SK2989,T6F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC7WH32FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: US8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7WH32FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: US8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 4887 шт: термін постачання 21-31 дні (днів) |
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| 2SA1483-Y(TE12L,F) | Toshiba Semiconductor and Storage |
Description: 2SA1483-Y(TE12L,F) Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PW-MINI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA600A | Toshiba Semiconductor and Storage |
Description: MG06 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA600E | Toshiba Semiconductor and Storage |
Description: MG06 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG0GSCA800A | Toshiba Semiconductor and Storage |
Description: MG06 8TB Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA800E | Toshiba Semiconductor and Storage |
Description: MG06 8TBPackaging: Bulk Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA10TE | Toshiba Semiconductor and Storage |
Description: MG06 10TBPackaging: Bulk Memory Size: 10TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA10TA | Toshiba Semiconductor and Storage |
Description: MG06 10TBPackaging: Bulk Memory Size: 10TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CMG06A,LQ(M | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 1A M-FLATPackaging: Box Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLP4590A(TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP4590A(TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
на замовлення 611 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(D4TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP4590A(D4TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Termination Style: SMD (SMT) Tab Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Termination Style: SMD (SMT) Tab Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP4590A(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Termination Style: SMD (SMT) Tab Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Termination Style: Gull Wing Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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TLP4590AF(LF4,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Termination Style: Gull Wing Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(LF5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Termination Style: SMD (SMT) Tab Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(LF1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Termination Style: SMD (SMT) Tab Load Current: 1.2 A Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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TLP4590AF(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Termination Style: PC Pin Load Current: 1.2 A Supplier Device Package: 6-DIP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: cUL, UL, VDE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB67S279FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB67S279FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3167 шт: термін постачання 21-31 дні (днів) |
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TC74HC595AF(EL,F) | Toshiba Semiconductor and Storage |
Description: IC SR TRI-STATE 8BIT 16-SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOP Number of Bits per Element: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC74HC595AF(EL,F) | Toshiba Semiconductor and Storage |
Description: IC SR TRI-STATE 8BIT 16-SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 16-SOP Number of Bits per Element: 8 |
на замовлення 1784 шт: термін постачання 21-31 дні (днів) |
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XPJR6604PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; 0.66MOHM; S-TOGLPackaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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XPJR6604PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; 0.66MOHM; S-TOGLPackaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5778 шт: термін постачання 21-31 дні (днів) |
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TC4001BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC4001BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVB-TCKE805NA | Toshiba Semiconductor and Storage |
Description: EVAL BOARD FOR TCKE805NAPackaging: Bulk Function: Electronic Fuses (eFuse) Type: Circuit Protection Utilized IC / Part: TCKE805NA Supplied Contents: Board(s) Primary Attributes: 4.4V ~ 18V Input Voltage Embedded: No Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TPCC8105,L1Q | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TSOPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TPCC8105,L1Q | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TSOPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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TPCC8136.LQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 9.4A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK31A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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RN2412,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2412,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 22 kOhms Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCK322G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 2:1 16WCSPPackaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK322G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 2:1 16WCSPPackaging: Cut Tape (CT) Features: Slew Rate Controlled, Status Flag Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TC75S55FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 10µA Slew Rate: 0.7V/µs Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 5-SSOP Number of Circuits: 1 Current - Output / Channel: 700 µA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC75S55FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 10µA Slew Rate: 0.7V/µs Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 5-SSOP Number of Circuits: 1 Current - Output / Channel: 700 µA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 7 V |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| TLP632(GRL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(GB-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(GB-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(GR-LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(GR-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(HO-GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(GB-LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP632(LF2,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TJ10S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TJ10S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
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TPD4163K,F | Toshiba Semiconductor and Storage |
Description: 600V; IPD; 1A; HDIP30 INTELLIGENPackaging: Tube Package / Case: 30-PowerDIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: PWM Operating Temperature: -40°C ~ 135°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Applications: General Purpose Technology: IGBT Voltage - Load: 50V ~ 450V Supplier Device Package: 30-HDIP Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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TPD4164K,F | Toshiba Semiconductor and Storage |
Description: 600V; IPD; 2A; HDIP30 INTELLIGENPackaging: Tube Package / Case: 30-PowerDIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: PWM Operating Temperature: -40°C ~ 135°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Applications: General Purpose Technology: IGBT Voltage - Load: 50V ~ 450V Supplier Device Package: 30-HDIP Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 283 шт: термін постачання 21-31 дні (днів) |
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SSM6K809R,LF | Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH VDSS=60Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TLP4176A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Operating Temperature: -40°C ~ 105°C
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Operating Temperature: -40°C ~ 105°C
на замовлення 117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.06 грн |
| 10+ | 120.25 грн |
| 100+ | 92.62 грн |
| 2SK2989(TPE6,F,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2989,F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2989,T6F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
товару немає в наявності
В кошику
од. на суму грн.
| TC7WH32FK,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.88 грн |
| TC7WH32FK,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 4887 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.25 грн |
| 39+ | 8.37 грн |
| 44+ | 7.37 грн |
| 100+ | 5.89 грн |
| 250+ | 5.39 грн |
| 500+ | 5.09 грн |
| 1000+ | 4.77 грн |
| 2SA1483-Y(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
товару немає в наявності
В кошику
од. на суму грн.
| MG06SCA600A |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MG06SCA600E |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MG06SCA800E |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MG06SCA10TE |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| MG06SCA10TA |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
В кошику
од. на суму грн.
| CMG06A,LQ(M |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Box
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Box
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| TLP4590A(TP5,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
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В кошику
од. на суму грн.
| TLP4590A(TP5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
на замовлення 611 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| 50+ | 179.97 грн |
| 100+ | 173.80 грн |
| 250+ | 165.97 грн |
| 500+ | 157.64 грн |
| TLP4590A(D4TP5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
товару немає в наявності
В кошику
од. на суму грн.
| TLP4590A(D4TP5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| 50+ | 179.97 грн |
| 100+ | 173.80 грн |
| 250+ | 165.97 грн |
| 500+ | 157.64 грн |
| TLP4590A(D4TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
товару немає в наявності
В кошику
од. на суму грн.
| TLP4590A(D4TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 141 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| 50+ | 179.97 грн |
| 100+ | 173.80 грн |
| TLP4590A(F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| 50+ | 179.97 грн |
| 100+ | 173.80 грн |
| TLP4590AF(LF4,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 40 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| TLP4590A(LF5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 53 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| 50+ | 179.97 грн |
| TLP4590A(LF1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
на замовлення 45 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.79 грн |
| 10+ | 207.96 грн |
| 25+ | 198.58 грн |
| TLP4590AF(F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: PC Pin
Load Current: 1.2 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: PC Pin
Load Current: 1.2 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: cUL, UL, VDE
товару немає в наявності
В кошику
од. на суму грн.
| TB67S279FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
В кошику
од. на суму грн.
| TB67S279FTG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.21 грн |
| 10+ | 184.36 грн |
| 25+ | 169.20 грн |
| 100+ | 143.18 грн |
| 250+ | 135.74 грн |
| 500+ | 131.25 грн |
| 1000+ | 125.46 грн |
| TC74HC595AF(EL,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
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В кошику
од. на суму грн.
| TC74HC595AF(EL,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
Description: IC SR TRI-STATE 8BIT 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-SOP
Number of Bits per Element: 8
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.45 грн |
| 10+ | 41.94 грн |
| 25+ | 37.80 грн |
| 100+ | 31.15 грн |
| 250+ | 29.09 грн |
| 500+ | 27.85 грн |
| 1000+ | 27.23 грн |
| XPJR6604PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 93.37 грн |
| 3000+ | 87.83 грн |
| 4500+ | 86.78 грн |
| XPJR6604PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 176.38 грн |
| 10+ | 126.23 грн |
| 25+ | 115.33 грн |
| 100+ | 96.99 грн |
| 250+ | 91.61 грн |
| 500+ | 88.38 грн |
| TC4001BF(EL,N,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| TC4001BF(EL,N,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| EVB-TCKE805NA |
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Виробник: Toshiba Semiconductor and Storage
Description: EVAL BOARD FOR TCKE805NA
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Utilized IC / Part: TCKE805NA
Supplied Contents: Board(s)
Primary Attributes: 4.4V ~ 18V Input Voltage
Embedded: No
Contents: Board(s)
Description: EVAL BOARD FOR TCKE805NA
Packaging: Bulk
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Utilized IC / Part: TCKE805NA
Supplied Contents: Board(s)
Primary Attributes: 4.4V ~ 18V Input Voltage
Embedded: No
Contents: Board(s)
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| TPCC8105,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
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| TPCC8105,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 44.57 грн |
| 100+ | 30.82 грн |
| 500+ | 25.52 грн |
| 1000+ | 21.85 грн |
| 2000+ | 21.17 грн |
| TPCC8136.LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
Description: MOSFET P-CH 20V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
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| TK31A60W,S4VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: MOSFET N-CH 600V 30.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 592.06 грн |
| 50+ | 311.70 грн |
| RN2412,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.95 грн |
| 6000+ | 4.29 грн |
| RN2412,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 23+ | 13.95 грн |
| 100+ | 8.72 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.35 грн |
| RN2413,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.95 грн |
| RN2413,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.01 грн |
| 23+ | 13.95 грн |
| 100+ | 8.72 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.35 грн |
| TCK322G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 45.90 грн |
| TCK322G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.44 грн |
| 10+ | 98.08 грн |
| 25+ | 93.07 грн |
| 100+ | 71.73 грн |
| 250+ | 67.06 грн |
| 500+ | 59.26 грн |
| 1000+ | 46.02 грн |
| 2500+ | 42.95 грн |
| TC75S55FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
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од. на суму грн.
| TC75S55FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.57 грн |
| 11+ | 31.58 грн |
| 25+ | 28.83 грн |
| 100+ | 20.14 грн |
| 250+ | 18.26 грн |
| 500+ | 15.11 грн |
| 1000+ | 11.15 грн |
| TJ10S04M3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
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В кошику
од. на суму грн.
| TJ10S04M3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Description: MOSFET P-CH 40V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.91 грн |
| 10+ | 88.67 грн |
| 100+ | 59.71 грн |
| 500+ | 44.38 грн |
| 1000+ | 40.63 грн |
| TPD4163K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: 600V; IPD; 1A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 600V; IPD; 1A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 443.01 грн |
| 15+ | 315.98 грн |
| 30+ | 298.70 грн |
| 105+ | 257.99 грн |
| 255+ | 246.31 грн |
| TPD4164K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: 600V; IPD; 2A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Description: 600V; IPD; 2A; HDIP30 INTELLIGEN
Packaging: Tube
Package / Case: 30-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 135°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: IGBT
Voltage - Load: 50V ~ 450V
Supplier Device Package: 30-HDIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 283 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 515.88 грн |
| 15+ | 369.99 грн |
| 30+ | 350.26 грн |
| 105+ | 303.17 грн |
| 255+ | 289.81 грн |
| SSM6K809R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH VDSS=60
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Description: SMALL SIGNAL MOSFET N-CH VDSS=60
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.34 грн |




















