Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13491) > Сторінка 211 з 225
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TLP266J(V4T7TR,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; ZC; 7MA TRIGGER CPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(V4T7TR,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; ZC; 7MA TRIGGER CPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(V4-TPR,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; ZC; VDE; SO6; TAPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(V4-TPR,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; ZC; VDE; SO6; TAPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(V4-TPL,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; ZC; VDE; SO6; TAPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(V4-TPL,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; ZC; VDE; SO6; TAPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 8150 шт: термін постачання 21-31 дні (днів) |
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TLP5774H(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1598 шт: термін постачання 21-31 дні (днів) |
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TLP5774H(D4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5774H(D4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5771H(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5771H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5771H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5774H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5774H(D4TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 4A, 4A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5771H(D4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP5771H(D4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1471 шт: термін постачання 21-31 дні (днів) |
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TLP5771H(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Current - Peak Output: 1A Technology: Optical Coupling Current - Output High, Low: 1A, 1A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 56ns, 25ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 8 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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TC74VHC00FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14VSSOP Packaging: Tape & Reel (TR) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-VSSOP Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC74VHC00FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14VSSOP Packaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-VSSOP Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TODX2353(F) | Toshiba Semiconductor and Storage |
Description: TXRX MOD OPTICAL 500KBPS 650NMPackaging: Bulk Connector Type: JIS F07 Wavelength: 650nm Mounting Type: Through Hole Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 500kbps |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TK8P65W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK8P65W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V |
на замовлення 1974 шт: термін постачання 21-31 дні (днів) |
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MKZ5V6,LM(B | Toshiba Semiconductor and Storage |
Description: 5.6V ZENER DIODE, SOT23 PD (MAX) Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MKZ5V6,LM(B | Toshiba Semiconductor and Storage |
Description: 5.6V ZENER DIODE, SOT23 PD (MAX) Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XCUZ5V6,H3XHF(B | Toshiba Semiconductor and Storage |
Description: TVS DIODE 2.5VWM 9VC USCPackaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 2.5V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XCUZ5V6,H3XHF(B | Toshiba Semiconductor and Storage |
Description: TVS DIODE 2.5VWM 9VC USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 2.5V (Max) Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Power - Peak Pulse: 155W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5788 шт: термін постачання 21-31 дні (днів) |
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TLP268J(T2-TPL,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; 2MA LOW TRIGGER CPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: CQC, cUR, UR Current - Hold (Ih): 200µA (Typ) Turn On Time: 100µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 3mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLP268J(T2-TPL,E | Toshiba Semiconductor and Storage |
Description: TRIAC COUPLER; 2MA LOW TRIGGER CPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: CQC, cUR, UR Current - Hold (Ih): 200µA (Typ) Turn On Time: 100µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 3mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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| MG08SDA400A | Toshiba Semiconductor and Storage |
Description: MG08 4TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MG08SDA400N | Toshiba Semiconductor and Storage |
Description: MG08 4TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MG08SDA400E | Toshiba Semiconductor and Storage |
Description: MG08 4TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TPC8228-H,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 3.8A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TPC8227-H,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 40V 5.1A 8SOPPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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7UL1G17FS,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: fSV |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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7UL1G17FS,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 3.6V FSVPackaging: Cut Tape (CT) Package / Case: SOT-953 Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: fSV |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| 7UL1G08FS,RF(B | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOTPackaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: fSV Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 7UL1G08FS,RF(B | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOTPackaging: Cut Tape (CT) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: fSV Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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7UL1G04NX,ELF(S | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 6-MP6D (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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7UL1G04NX,ELF(S | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 6-MP6D (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 9985 шт: термін постачання 21-31 дні (днів) |
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7UL1G125NX,ELF(S | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6VPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 6-MP6D (1.45x1) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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7UL1G125NX,ELF(S | Toshiba Semiconductor and Storage |
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6VPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 6-MP6D (1.45x1) |
на замовлення 9983 шт: термін постачання 21-31 дні (днів) |
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TK35S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 35A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK35S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 35A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V |
на замовлення 1650 шт: термін постачання 21-31 дні (днів) |
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TK33S10N1L,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
на замовлення 97 шт: термін постачання 21-31 дні (днів) |
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CMS16(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 3A MFLATPackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CMS16(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 3A MFLATPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 1617 шт: термін постачання 21-31 дні (днів) |
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| TPCP8J01(TE85L,F,M | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 32V 5.5A PS-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: PS-8 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 32 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TK10A80W,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 800V 9.5A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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| TCR3UG1825A,LF | Toshiba Semiconductor and Storage |
Description: 300MA LDO, VOUT=1.825V, DROPOUT=Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 0.68 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.825V Control Features: Current Limit, Enable PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TCR3UG1825A,LF | Toshiba Semiconductor and Storage |
Description: 300MA LDO, VOUT=1.825V, DROPOUT=Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 0.68 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 1.825V Control Features: Current Limit, Enable PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCK321G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 2:1 16WCSPFeatures: Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCK321G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 2:1 16WCSPFeatures: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
на замовлення 4939 шт: термін постачання 21-31 дні (днів) |
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TK042N65Z5,S1F | Toshiba Semiconductor and Storage |
Description: 650V DTMOS6 HSD 42MOHM TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.85mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V |
на замовлення 63 шт: термін постачання 21-31 дні (днів) |
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| TTC501,LF(B | Toshiba Semiconductor and Storage |
Description: TRANSISTOR FOR LF SMALL-SIGNAL A Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Supplier Device Package: SOT-23F Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| TTC501,LF(B | Toshiba Semiconductor and Storage |
Description: TRANSISTOR FOR LF SMALL-SIGNAL A Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Supplier Device Package: SOT-23F Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC74VHC244F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V 20SOP Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC74VHC244F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V 20SOP Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCTH011AE,LF(CT | Toshiba Semiconductor and Storage |
Description: CMOS LINEAR IC OVER TEMP DETECTIPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCTH011AE,LF(CT | Toshiba Semiconductor and Storage |
Description: CMOS LINEAR IC OVER TEMP DETECTIPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 7980 шт: термін постачання 21-31 дні (днів) |
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TCTH022AE,LF(CT | Toshiba Semiconductor and Storage |
Description: CMOS LINEAR IC OVER TEMP DETECTIPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Thermal Operating Temperature: -40°C ~ 125°C (TJ) Number of Voltages Monitored: 1 Reset Timeout: 17µs Typical Voltage - Threshold: 0.5V Supplier Device Package: ESV |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TLP266J(V4T7TR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; ZC; 7MA TRIGGER C
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; ZC; 7MA TRIGGER C
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.05 грн |
| TLP266J(V4T7TR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; ZC; 7MA TRIGGER C
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; ZC; 7MA TRIGGER C
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.36 грн |
| 10+ | 50.65 грн |
| 100+ | 34.35 грн |
| 500+ | 26.23 грн |
| 1000+ | 24.38 грн |
| TLP266J(V4-TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.64 грн |
| TLP266J(V4-TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.36 грн |
| 10+ | 50.65 грн |
| 100+ | 34.35 грн |
| 500+ | 26.23 грн |
| 1000+ | 24.38 грн |
| TLP266J(V4-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 27.05 грн |
| 6000+ | 24.80 грн |
| TLP266J(V4-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; ZC; VDE; SO6; TAP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 8150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.36 грн |
| 10+ | 50.65 грн |
| 100+ | 34.35 грн |
| 500+ | 26.23 грн |
| 1000+ | 24.38 грн |
| TLP5774H(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.90 грн |
| 10+ | 126.49 грн |
| 100+ | 97.30 грн |
| 500+ | 82.54 грн |
| TLP5774H(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 76.62 грн |
| TLP5774H(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 192.58 грн |
| 10+ | 123.41 грн |
| 100+ | 94.98 грн |
| 500+ | 80.58 грн |
| TLP5771H(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.36 грн |
| 10+ | 128.90 грн |
| 100+ | 99.20 грн |
| 500+ | 84.15 грн |
| TLP5771H(D4TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 80.02 грн |
| TLP5771H(D4TP4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.36 грн |
| 10+ | 128.90 грн |
| 100+ | 99.20 грн |
| 500+ | 84.15 грн |
| TLP5774H(D4TP4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 82.76 грн |
| TLP5774H(D4TP4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.26 грн |
| 10+ | 133.31 грн |
| 100+ | 102.59 грн |
| 500+ | 87.03 грн |
| TLP5771H(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
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| TLP5771H(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1471 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.04 грн |
| 10+ | 123.74 грн |
| 100+ | 90.40 грн |
| 500+ | 72.50 грн |
| TLP5771H(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 56ns, 25ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.04 грн |
| 10+ | 123.74 грн |
| 100+ | 90.40 грн |
| TC74VHC00FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| TC74VHC00FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| TODX2353(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 500KBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 500kbps
Description: TXRX MOD OPTICAL 500KBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 500kbps
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| TK8P65W,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
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| TK8P65W,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.63 грн |
| 10+ | 108.86 грн |
| 100+ | 85.91 грн |
| MKZ5V6,LM(B |
Виробник: Toshiba Semiconductor and Storage
Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
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| MKZ5V6,LM(B |
Виробник: Toshiba Semiconductor and Storage
Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Description: 5.6V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
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| XCUZ5V6,H3XHF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM 9VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 2.5VWM 9VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.77 грн |
| XCUZ5V6,H3XHF(B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM 9VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 2.5VWM 9VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5788 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.82 грн |
| 40+ | 8.40 грн |
| 100+ | 5.21 грн |
| 500+ | 3.56 грн |
| 1000+ | 3.13 грн |
| TLP268J(T2-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.81 грн |
| 6000+ | 27.12 грн |
| TLP268J(T2-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: TRIAC COUPLER; 2MA LOW TRIGGER C
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.50 грн |
| 10+ | 52.14 грн |
| 100+ | 38.59 грн |
| 500+ | 33.28 грн |
| 1000+ | 27.41 грн |
| MG08SDA400A |
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Виробник: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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| MG08SDA400N |
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Виробник: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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| MG08SDA400E |
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Виробник: Toshiba Semiconductor and Storage
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG08 4TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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| TPC8228-H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 3.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 3.8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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| TPC8227-H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 40V 5.1A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 40V 5.1A 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP
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| 7UL1G17FS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.80 грн |
| 7UL1G17FS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
Description: IC BUFFER NON-INVERT 3.6V FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: fSV
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.41 грн |
| 13+ | 25.78 грн |
| 25+ | 23.22 грн |
| 100+ | 15.05 грн |
| 250+ | 12.68 грн |
| 500+ | 10.30 грн |
| 1000+ | 7.80 грн |
| 2500+ | 7.02 грн |
| 5000+ | 6.63 грн |
| 7UL1G08FS,RF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| 7UL1G08FS,RF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC VCC: 2.3V-3.6V, SOT
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| 7UL1G04NX,ELF(S |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 6.89 грн |
| 7UL1G04NX,ELF(S |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-MP6D (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 9985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.63 грн |
| 13+ | 26.53 грн |
| 25+ | 21.72 грн |
| 100+ | 15.34 грн |
| 250+ | 12.87 грн |
| 500+ | 11.34 грн |
| 1000+ | 9.90 грн |
| 2500+ | 8.54 грн |
| 7UL1G125NX,ELF(S |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.40 грн |
| 7UL1G125NX,ELF(S |
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Виробник: Toshiba Semiconductor and Storage
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
Description: L-MOS LVP IC XSON6 VCC:0.9V-3.6V
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-MP6D (1.45x1)
на замовлення 9983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.63 грн |
| 13+ | 26.45 грн |
| 25+ | 21.69 грн |
| 100+ | 15.31 грн |
| 250+ | 12.84 грн |
| 500+ | 11.32 грн |
| 1000+ | 9.88 грн |
| 2500+ | 8.53 грн |
| TK35S04K3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
Description: MOSFET N-CH 40V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
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| TK35S04K3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
Description: MOSFET N-CH 40V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 10 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.31 грн |
| 10+ | 95.72 грн |
| 100+ | 64.58 грн |
| 500+ | 48.08 грн |
| 1000+ | 44.05 грн |
| TK33S10N1L,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.86 грн |
| 10+ | 130.23 грн |
| CMS16(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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од. на суму грн.
| CMS16(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A MFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 1617 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.50 грн |
| 10+ | 40.83 грн |
| 100+ | 30.37 грн |
| 500+ | 22.00 грн |
| 1000+ | 19.91 грн |
| TPCP8J01(TE85L,F,M |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Description: MOSFET P-CH 32V 5.5A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Power Dissipation (Max): 2.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PS-8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 32 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
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В кошику
од. на суму грн.
| TK10A80W,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
Description: MOSFET N-CH 800V 9.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 217.63 грн |
| TCR3UG1825A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 9.76 грн |
| TCR3UG1825A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: 300MA LDO, VOUT=1.825V, DROPOUT=
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.825V
Control Features: Current Limit, Enable
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.27 грн |
| 12+ | 28.52 грн |
| 25+ | 26.08 грн |
| 100+ | 18.21 грн |
| 250+ | 16.50 грн |
| 500+ | 13.66 грн |
| 1000+ | 10.08 грн |
| 2500+ | 9.24 грн |
| TCK321G,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
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В кошику
од. на суму грн.
| TCK321G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
на замовлення 4939 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.86 грн |
| 10+ | 98.71 грн |
| 25+ | 93.74 грн |
| 100+ | 72.25 грн |
| 250+ | 67.53 грн |
| 500+ | 59.68 грн |
| 1000+ | 46.35 грн |
| 2500+ | 43.26 грн |
| TK042N65Z5,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: 650V DTMOS6 HSD 42MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
Description: 650V DTMOS6 HSD 42MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 27.5A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.85mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 300 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1032.01 грн |
| 30+ | 606.14 грн |
| TTC501,LF(B |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.34 грн |
| 6000+ | 7.58 грн |
| TTC501,LF(B |
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANSISTOR FOR LF SMALL-SIGNAL A
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: SOT-23F
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 38.00 грн |
| 13+ | 27.19 грн |
| 25+ | 24.55 грн |
| 100+ | 15.91 грн |
| 250+ | 13.39 грн |
| 500+ | 10.88 грн |
| 1000+ | 8.23 грн |
| TC74VHC244F(EL,K,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
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В кошику
од. на суму грн.
| TC74VHC244F(EL,K,F |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-SOP
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В кошику
од. на суму грн.
| TCTH011AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 14.35 грн |
| TCTH011AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 7980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.77 грн |
| 16+ | 20.87 грн |
| 25+ | 18.23 грн |
| 50+ | 17.29 грн |
| 100+ | 16.44 грн |
| 500+ | 14.48 грн |
| 1000+ | 13.86 грн |
| TCTH022AE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
Description: CMOS LINEAR IC OVER TEMP DETECTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Thermal
Operating Temperature: -40°C ~ 125°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 17µs Typical
Voltage - Threshold: 0.5V
Supplier Device Package: ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 14.26 грн |















