Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 205 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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RN1413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TK60S10N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 60A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK60S10N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 60A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: DPAK+ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 7619 шт: термін постачання 21-31 дні (днів) |
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| MN07ACA14T | Toshiba Semiconductor and Storage |
Description: MN07 NAS B2B 14TBPackaging: Bulk Memory Size: 14TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 60°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MG07ACP14TE | Toshiba Semiconductor and Storage |
Description: MG07 14TBPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 14TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
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TB67S580FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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TB67S580FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3708 шт: термін постачання 21-31 дні (днів) |
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TB67S581FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S581FNG,EL | Toshiba Semiconductor and Storage |
Description: STEPPING MOTOR CONTROL DRIVER ICPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: On/Off Operating Temperature: -40°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 8.2V ~ 44V Applications: General Purpose Technology: DMOS Voltage - Load: 8.2V ~ 44V Supplier Device Package: 28-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 4386 шт: термін постачання 21-31 дні (днів) |
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TLP266J(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Current - Hold (Ih): 600µA (Typ) Turn On Time: 30µs Supplier Device Package: 6-SOP Zero Crossing Circuit: Yes Static dV/dt (Min): 200V/µs Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP266J(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOPCurrent - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Cut Tape (CT) Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 200V/µs Zero Crossing Circuit: Yes Supplier Device Package: 6-SOP Turn On Time: 30µs Current - Hold (Ih): 600µA (Typ) Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.27V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac |
на замовлення 5703 шт: термін постачання 21-31 дні (днів) |
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TLP5832(D4-TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOCurrent - DC Forward (If) (Max): 20mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 15V ~ 30V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 8-SO Inputs - Side 1/Side 2: 1/0 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5832(D4-TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SONumber of Channels: 1 Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 8-SO Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 1.55V Voltage - Supply: 15V ~ 30V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5832(TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP5832(TP,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.4V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
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TLP5832(D4,E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tube Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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TLP5832(E | Toshiba Semiconductor and Storage |
Description: IGBT GATE DRIVE PHOTOCOUPLER; SOPackaging: Tube Package / Case: 8-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Number of Channels: 1 |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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TLP4176A(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 105°C Termination Style: Gull Wing Load Current: 500 mA Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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TLP4176A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 105°C Termination Style: Gull Wing Load Current: 500 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLP4176A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 500MA 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.15VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 105°C Termination Style: Gull Wing Load Current: 500 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2.5 Ohms |
на замовлення 4938 шт: термін постачання 21-31 дні (днів) |
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2SK2989(TPE6,F,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SK2989,F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SK2989,T6F(J | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH TO92MODPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Current - Continuous Drain (Id) @ 25°C: 5A (Tj) Supplier Device Package: TO-92MOD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC7WH32FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP US8Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: US8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TC7WH32FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP US8Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: US8 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 10333 шт: термін постачання 21-31 дні (днів) |
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| 2SA1483-Y(TE12L,F) | Toshiba Semiconductor and Storage |
Description: 2SA1483-Y(TE12L,F) Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PW-MINI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA600A | Toshiba Semiconductor and Storage |
Description: MG06 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA600E | Toshiba Semiconductor and Storage |
Description: MG06 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MG0GSCA800A | Toshiba Semiconductor and Storage |
Description: MG06 8TB Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA800E | Toshiba Semiconductor and Storage |
Description: MG06 8TBPackaging: Bulk Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA10TE | Toshiba Semiconductor and Storage |
Description: MG06 10TBPackaging: Bulk Memory Size: 10TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| MG06SCA10TA | Toshiba Semiconductor and Storage |
Description: MG06 10TBPackaging: Bulk Memory Size: 10TB Memory Type: Magnetic Disk (HDD) Type: SAS Form Factor: 3.5" |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| CMG06A,LQ(M | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 600V 1A M-FLATPackaging: Box Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLP4590A(TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP4590A(TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
на замовлення 673 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(D4TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP4590A(D4TP5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
на замовлення 669 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1 ~ 1.4VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP4590A(D4TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VApproval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 110°C On-State Resistance (Max): 600 mOhms Voltage - Load: 0 V ~ 60 V Supplier Device Package: 6-SMD Load Current: 1.2 A Termination Style: SMD (SMT) Tab Circuit: SPST-NC (1 Form B) Voltage - Input: 1.1 ~ 1.4VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD (0.300", 7.62mm) Packaging: Cut Tape (CT) |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VApproval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 110°C Supplier Device Package: 6-SMD Load Current: 1.2 A Termination Style: Gull Wing Circuit: SPST-NC (1 Form B) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tube On-State Resistance (Max): 600 mOhms Voltage - Load: 0 V ~ 60 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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TLP4590AF(LF4,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VApproval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 110°C On-State Resistance (Max): 600 mOhms Voltage - Load: 0 V ~ 60 V Supplier Device Package: 6-SMD Load Current: 1.2 A Termination Style: Gull Wing Circuit: SPST-NC (1 Form B) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tube |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(LF5,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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TLP4590A(LF1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-SMD (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-SMD Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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TLP4590AF(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NC 1.2A 0-60VPackaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.27VDC Circuit: SPST-NC (1 Form B) Operating Temperature: -40°C ~ 110°C Termination Style: PC Pin Load Current: 1.2 A Approval Agency: cUL, UL, VDE Supplier Device Package: 6-DIP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 600 mOhms |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TB67S279FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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TB67S279FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER BIPOLAR 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 |
на замовлення 3167 шт: термін постачання 21-31 дні (днів) |
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XPJR6604PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; 0.66MOHM; S-TOGLPackaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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XPJR6604PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V; UMOS9; 0.66MOHM; S-TOGLPackaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: S-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5778 шт: термін постачання 21-31 дні (днів) |
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TC4001BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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TC4001BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 1765 шт: термін постачання 21-31 дні (днів) |
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EVB-TCKE805NA | Toshiba Semiconductor and Storage |
Description: EVAL BOARD FOR TCKE805NAContents: Board(s) Embedded: No Primary Attributes: 4.4V ~ 18V Input Voltage Supplied Contents: Board(s) Utilized IC / Part: TCKE805NA Type: Circuit Protection Function: Electronic Fuses (eFuse) Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TPCC8105,L1Q | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TSOPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TPCC8105,L1Q | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TSOInput Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 500µA Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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TPCC8136.LQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 9.4A 8TSON Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 700mW (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK31A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 30.8A TO220SISFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.7V @ 1.5mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta) |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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RN2412,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIFrequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Resistor - Base (R1): 22 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2412,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIQualification: AEC-Q101 Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Qualification: AEC-Q101 Resistor - Base (R1): 47 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN2413,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINITransistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Resistor - Base (R1): 47 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: S-Mini DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCK322G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 2:1 16WCSPFeatures: Slew Rate Controlled, Status Flag Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 98mOhm Voltage - Load: 2.3V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 2:1 Supplier Device Package: 16-WCSPC (1.9x1.9) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| RN1413,LXHF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.51 грн |
| TK60S10N1L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 44.34 грн |
| 4000+ | 41.01 грн |
| TK60S10N1L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Qualification: AEC-Q101
на замовлення 7619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.41 грн |
| 10+ | 91.25 грн |
| 100+ | 63.78 грн |
| 500+ | 48.52 грн |
| 1000+ | 47.11 грн |
| MN07ACA14T |
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Виробник: Toshiba Semiconductor and Storage
Description: MN07 NAS B2B 14TB
Packaging: Bulk
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MN07 NAS B2B 14TB
Packaging: Bulk
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 60°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MG07ACP14TE |
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Виробник: Toshiba Semiconductor and Storage
Description: MG07 14TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: MG07 14TB
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| TB67S580FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S580FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.73 грн |
| 10+ | 77.37 грн |
| 25+ | 70.29 грн |
| 100+ | 58.64 грн |
| 250+ | 55.17 грн |
| 500+ | 53.06 грн |
| 1000+ | 50.49 грн |
| TB67S581FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 53.93 грн |
| TB67S581FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: STEPPING MOTOR CONTROL DRIVER IC
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: On/Off
Operating Temperature: -40°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 8.2V ~ 44V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 8.2V ~ 44V
Supplier Device Package: 28-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 4386 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.73 грн |
| 10+ | 77.37 грн |
| 25+ | 70.29 грн |
| 100+ | 58.64 грн |
| 250+ | 55.17 грн |
| 500+ | 53.06 грн |
| 1000+ | 50.49 грн |
| TLP266J(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Current - Hold (Ih): 600µA (Typ)
Turn On Time: 30µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 200V/µs
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.39 грн |
| TLP266J(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 200V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SOP
Turn On Time: 30µs
Current - Hold (Ih): 600µA (Typ)
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.27V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Cut Tape (CT)
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 200V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SOP
Turn On Time: 30µs
Current - Hold (Ih): 600µA (Typ)
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.27V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
на замовлення 5703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.84 грн |
| 10+ | 44.23 грн |
| 100+ | 32.55 грн |
| 500+ | 25.69 грн |
| 1000+ | 24.09 грн |
| TLP5832(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 73.67 грн |
| TLP5832(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.28 грн |
| 10+ | 133.07 грн |
| 100+ | 98.11 грн |
| 500+ | 79.13 грн |
| TLP5832(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP5832(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.28 грн |
| 10+ | 133.07 грн |
| 100+ | 98.11 грн |
| 500+ | 79.13 грн |
| TLP5832(D4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.28 грн |
| 75+ | 101.31 грн |
| TLP5832(E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
Description: IGBT GATE DRIVE PHOTOCOUPLER; SO
Packaging: Tube
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Number of Channels: 1
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.28 грн |
| 75+ | 101.31 грн |
| TLP4176A(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.60 грн |
| 10+ | 122.20 грн |
| 100+ | 89.50 грн |
| TLP4176A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 89.25 грн |
| TLP4176A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
Description: SSR RELAY SPST-NC 500MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 105°C
Termination Style: Gull Wing
Load Current: 500 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2.5 Ohms
на замовлення 4938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.46 грн |
| 10+ | 113.44 грн |
| 25+ | 108.36 грн |
| 50+ | 98.22 грн |
| 100+ | 94.85 грн |
| 250+ | 90.58 грн |
| 500+ | 86.04 грн |
| 1000+ | 83.09 грн |
| 2SK2989(TPE6,F,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2989,F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2989,T6F(J |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Supplier Device Package: TO-92MOD
товару немає в наявності
В кошику
од. на суму грн.
| TC7WH32FK,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.53 грн |
| 6000+ | 5.15 грн |
| 9000+ | 5.06 грн |
| TC7WH32FK,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: US8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 10333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 33+ | 9.21 грн |
| 38+ | 8.09 грн |
| 100+ | 6.45 грн |
| 250+ | 5.91 грн |
| 500+ | 5.59 грн |
| 1000+ | 5.24 грн |
| 2SA1483-Y(TE12L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
Description: 2SA1483-Y(TE12L,F)
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PW-MINI
товару немає в наявності
В кошику
од. на суму грн.
| MG06SCA600A |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MG06SCA600E |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MG06SCA800E |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MG06SCA10TE |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| MG06SCA10TA |
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Виробник: Toshiba Semiconductor and Storage
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
Description: MG06 10TB
Packaging: Bulk
Memory Size: 10TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Form Factor: 3.5"
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| CMG06A,LQ(M |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Box
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A M-FLAT
Packaging: Box
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| TLP4590A(TP5,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP4590A(TP5,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
на замовлення 673 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| 25+ | 211.76 грн |
| 50+ | 191.90 грн |
| 100+ | 185.33 грн |
| 250+ | 176.97 грн |
| 500+ | 168.09 грн |
| TLP4590A(D4TP5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP4590A(D4TP5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| 25+ | 211.76 грн |
| 50+ | 191.90 грн |
| 100+ | 185.33 грн |
| 250+ | 176.97 грн |
| 500+ | 168.09 грн |
| TLP4590A(D4TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1 ~ 1.4VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP4590A(D4TP1,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 600 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 6-SMD
Load Current: 1.2 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NC (1 Form B)
Voltage - Input: 1.1 ~ 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NC 1.2A 0-60V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 600 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 6-SMD
Load Current: 1.2 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NC (1 Form B)
Voltage - Input: 1.1 ~ 1.4VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| 25+ | 211.76 грн |
| 50+ | 191.90 грн |
| TLP4590A(F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
Supplier Device Package: 6-SMD
Load Current: 1.2 A
Termination Style: Gull Wing
Circuit: SPST-NC (1 Form B)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
On-State Resistance (Max): 600 mOhms
Voltage - Load: 0 V ~ 60 V
Description: SSR RELAY SPST-NC 1.2A 0-60V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
Supplier Device Package: 6-SMD
Load Current: 1.2 A
Termination Style: Gull Wing
Circuit: SPST-NC (1 Form B)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
On-State Resistance (Max): 600 mOhms
Voltage - Load: 0 V ~ 60 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| 25+ | 211.76 грн |
| TLP4590AF(LF4,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 600 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 6-SMD
Load Current: 1.2 A
Termination Style: Gull Wing
Circuit: SPST-NC (1 Form B)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Description: SSR RELAY SPST-NC 1.2A 0-60V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 600 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 6-SMD
Load Current: 1.2 A
Termination Style: Gull Wing
Circuit: SPST-NC (1 Form B)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| TLP4590A(LF5,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| 25+ | 211.76 грн |
| TLP4590A(LF1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-SMD
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| TLP4590AF(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: PC Pin
Load Current: 1.2 A
Approval Agency: cUL, UL, VDE
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.66 грн |
| 10+ | 221.68 грн |
| 25+ | 211.76 грн |
| 50+ | 191.90 грн |
| TB67S279FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S279FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Description: IC MOTOR DRIVER BIPOLAR 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
на замовлення 3167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.63 грн |
| 10+ | 174.51 грн |
| 25+ | 160.17 грн |
| 100+ | 135.53 грн |
| 250+ | 128.48 грн |
| 500+ | 124.24 грн |
| 1000+ | 118.76 грн |
| XPJR6604PB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 88.38 грн |
| 3000+ | 83.13 грн |
| 4500+ | 82.15 грн |
| XPJR6604PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
Description: 40V; UMOS9; 0.66MOHM; S-TOGL
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: S-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.95 грн |
| 10+ | 119.48 грн |
| 25+ | 109.17 грн |
| 100+ | 91.81 грн |
| 250+ | 86.72 грн |
| 500+ | 83.66 грн |
| TC4001BF(EL,N,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TC4001BF(EL,N,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 1765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 15+ | 20.38 грн |
| 25+ | 18.18 грн |
| 100+ | 14.78 грн |
| 250+ | 13.69 грн |
| 500+ | 13.04 грн |
| 1000+ | 12.33 грн |
| EVB-TCKE805NA |
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Виробник: Toshiba Semiconductor and Storage
Description: EVAL BOARD FOR TCKE805NA
Contents: Board(s)
Embedded: No
Primary Attributes: 4.4V ~ 18V Input Voltage
Supplied Contents: Board(s)
Utilized IC / Part: TCKE805NA
Type: Circuit Protection
Function: Electronic Fuses (eFuse)
Packaging: Bulk
Description: EVAL BOARD FOR TCKE805NA
Contents: Board(s)
Embedded: No
Primary Attributes: 4.4V ~ 18V Input Voltage
Supplied Contents: Board(s)
Utilized IC / Part: TCKE805NA
Type: Circuit Protection
Function: Electronic Fuses (eFuse)
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5785.34 грн |
| TPCC8105,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Description: PB-F POWER MOSFET TRANSISTOR TSO
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TPCC8105,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TSO
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: PB-F POWER MOSFET TRANSISTOR TSO
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.06 грн |
| 10+ | 42.19 грн |
| 100+ | 29.17 грн |
| 500+ | 24.15 грн |
| 1000+ | 20.69 грн |
| 2000+ | 20.04 грн |
| TPCC8136.LQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 9.4A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 9.4A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TK31A60W,S4VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220SIS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Description: MOSFET N-CH 600V 30.8A TO220SIS
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 484.40 грн |
| 10+ | 314.07 грн |
| 50+ | 248.70 грн |
| RN2412,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Base (R1): 22 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.68 грн |
| 6000+ | 4.06 грн |
| RN2412,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 23+ | 13.21 грн |
| 100+ | 8.26 грн |
| 500+ | 5.72 грн |
| 1000+ | 5.07 грн |
| RN2413,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.68 грн |
| RN2413,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: TRANS PREBIAS PNP 50V SMINI
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 23+ | 13.21 грн |
| 100+ | 8.26 грн |
| 500+ | 5.72 грн |
| 1000+ | 5.07 грн |
| TCK322G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 2:1 16WCSP
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 98mOhm
Voltage - Load: 2.3V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 2:1
Supplier Device Package: 16-WCSPC (1.9x1.9)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 43.45 грн |























