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TLP700H(D4-TP,F) Toshiba Semiconductor and Storage TLP700H_Rev7.0_2-17-20.pdf Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
товар відсутній
74VHC138FT 74VHC138FT Toshiba Semiconductor and Storage TC74VHC138F%2CFN%2CFT%2CFK.pdf Description: IC DECODER 1 X 3:8 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
товар відсутній
74VHC138FT 74VHC138FT Toshiba Semiconductor and Storage TC74VHC138F%2CFN%2CFT%2CFK.pdf Description: IC DECODER 1 X 3:8 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 1657 шт:
термін постачання 21-31 дні (днів)
11+28.16 грн
12+ 23.37 грн
25+ 21.78 грн
100+ 16.36 грн
250+ 15.19 грн
500+ 12.86 грн
1000+ 9.77 грн
Мінімальне замовлення: 11
TA58M09S,MATUDQ(J TA58M09S,MATUDQ(J Toshiba Semiconductor and Storage TA58MxxS_2009-09-30.pdf Description: IC REG LINEAR 9V 500MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 9V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
товар відсутній
DF5G5M4N,LF DF5G5M4N,LF Toshiba Semiconductor and Storage DF5G5M4N_datasheet_en_20220125.pdf?did=57532&prodName=DF5G5M4N Description: TVS DIODE 3.6VWM 15VC 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
DF5G5M4N,LF DF5G5M4N,LF Toshiba Semiconductor and Storage DF5G5M4N_datasheet_en_20220125.pdf?did=57532&prodName=DF5G5M4N Description: TVS DIODE 3.6VWM 15VC 5DFN
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
TC74LCX14FK(EL,K) TC74LCX14FK(EL,K) Toshiba Semiconductor and Storage TC74LCX14F_datasheet_en_20210326.pdf?did=63362&prodName=TC74LCX14F Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
товар відсутній
TC74LCX14FK(EL,K) TC74LCX14FK(EL,K) Toshiba Semiconductor and Storage TC74LCX14F_datasheet_en_20210326.pdf?did=63362&prodName=TC74LCX14F Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
товар відсутній
TLP3924(TP15,F) TLP3924(TP15,F) Toshiba Semiconductor and Storage TLP3924_datasheet_en_20190624.pdf?did=8543&prodName=TLP3924 Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 4µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+128.05 грн
Мінімальне замовлення: 1500
TLP3924(TP15,F) TLP3924(TP15,F) Toshiba Semiconductor and Storage TLP3924_datasheet_en_20190624.pdf?did=8543&prodName=TLP3924 Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 4µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+285.98 грн
10+ 194.72 грн
100+ 159.47 грн
500+ 126.16 грн
Мінімальне замовлення: 2
RN1110MFV,L3F RN1110MFV,L3F Toshiba Semiconductor and Storage rn1110mfv_rn1111mfv_.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+1.9 грн
Мінімальне замовлення: 8000
RN1110MFV,L3F RN1110MFV,L3F Toshiba Semiconductor and Storage rn1110mfv_rn1111mfv_.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
25+11.55 грн
35+ 8 грн
100+ 4.28 грн
500+ 3.15 грн
1000+ 2.19 грн
2000+ 1.82 грн
Мінімальне замовлення: 25
SSM6P36FE,LM SSM6P36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11736&prodName=SSM6P36FE Description: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товар відсутній
SSM6P36FE,LM SSM6P36FE,LM Toshiba Semiconductor and Storage docget.jsp?did=11736&prodName=SSM6P36FE Description: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 3925 шт:
термін постачання 21-31 дні (днів)
10+29.61 грн
14+ 20.03 грн
100+ 10.13 грн
500+ 7.75 грн
1000+ 5.75 грн
2000+ 4.84 грн
Мінімальне замовлення: 10
TC74AC541F(EL,F) TC74AC541F(EL,F) Toshiba Semiconductor and Storage TC74AC541F_datasheet_en_20140301.pdf?did=3090&prodName=TC74AC541F Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
товар відсутній
TC74AC541F(EL,F) TC74AC541F(EL,F) Toshiba Semiconductor and Storage TC74AC541F_datasheet_en_20140301.pdf?did=3090&prodName=TC74AC541F Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
товар відсутній
TCD1209DG(8Z,K) TCD1209DG(8Z,K) Toshiba Semiconductor and Storage TCD1209DG_Web_Datasheet_en_20190108.pdf?did=13707&prodName=TCD1209DG Description: CCD IMAGE SENSOR - INTEGRATED CI
Packaging: Tray
Package / Case: 22-CDIP (0.400", 10.16mm)
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 11.4V ~ 13V
Pixel Size: 14µm x 14µm
Supplier Device Package: 22-CERDIP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
1+3241.85 грн
10+ 2628.59 грн
25+ 2464.27 грн
TBD62503AFNG,EL TBD62503AFNG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2000+29.51 грн
6000+ 27 грн
10000+ 25.98 грн
Мінімальне замовлення: 2000
TBD62503AFNG,EL TBD62503AFNG,EL Toshiba Semiconductor and Storage TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 10646 шт:
термін постачання 21-31 дні (днів)
5+69.33 грн
10+ 59.95 грн
25+ 56.83 грн
100+ 43.82 грн
250+ 40.96 грн
500+ 36.2 грн
1000+ 28.11 грн
Мінімальне замовлення: 5
TCR8BM08A,L3F TCR8BM08A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=0.8V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.21V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+10.06 грн
10000+ 9.02 грн
Мінімальне замовлення: 5000
TCR8BM08A,L3F TCR8BM08A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=0.8V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.21V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TCR8BM115A,L3F TCR8BM115A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=1.15V, DROPOUT=1
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.15V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.255V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+10.06 грн
10000+ 9.02 грн
Мінімальне замовлення: 5000
TCR8BM115A,L3F TCR8BM115A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=1.15V, DROPOUT=1
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.15V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.255V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TCR8BM18A,L3F TCR8BM18A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=1.8V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.305V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+10.06 грн
Мінімальне замовлення: 5000
TCR8BM18A,L3F TCR8BM18A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=1.8V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.305V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9860 шт:
термін постачання 21-31 дні (днів)
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TCR8BM085A,L3F TCR8BM085A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=0.85V, DROPOUT=1
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.85V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.215V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+10.06 грн
Мінімальне замовлення: 5000
TCR8BM085A,L3F TCR8BM085A,L3F Toshiba Semiconductor and Storage TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A Description: 800MA LDO, VOUT=0.85V, DROPOUT=1
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.85V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.215V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9942 шт:
термін постачання 21-31 дні (днів)
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TDTC124E,LM Toshiba Semiconductor and Storage TDTC124E_datasheet_en_20201113.pdf?did=36706&prodName=TDTC124E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+1.98 грн
Мінімальне замовлення: 3000
TDTC124E,LM Toshiba Semiconductor and Storage TDTC124E_datasheet_en_20201113.pdf?did=36706&prodName=TDTC124E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
27+10.83 грн
36+ 7.86 грн
100+ 4.23 грн
500+ 3.12 грн
1000+ 2.16 грн
Мінімальне замовлення: 27
TLP241A(D4,LF1,F TLP241A(D4,LF1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
3+140.1 грн
10+ 89.71 грн
100+ 69.03 грн
Мінімальне замовлення: 3
TLP2366(TPR,E TLP2366(TPR,E Toshiba Semiconductor and Storage docget.jsp?did=8527&prodName=TLP2366 Description: 20MBPS HIGH SPEED COUPLER; SO6;
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+31.03 грн
Мінімальне замовлення: 3000
SSM14N956L,EFF Toshiba Semiconductor and Storage docget.jsp?did=151761&prodName=SSM14N956L Description: 12V COMMON DRAIN MOSFET RSS(ON):
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
товар відсутній
SSM14N956L,EFF Toshiba Semiconductor and Storage docget.jsp?did=151761&prodName=SSM14N956L Description: 12V COMMON DRAIN MOSFET RSS(ON):
Packaging: Cut Tape (CT)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
4+96.05 грн
10+ 75.87 грн
100+ 59 грн
500+ 46.93 грн
1000+ 38.23 грн
2000+ 35.99 грн
5000+ 33.71 грн
Мінімальне замовлення: 4
2SA1971(TE12L,F) 2SA1971(TE12L,F) Toshiba Semiconductor and Storage 2SA1971_datasheet_en_20131101.pdf?did=20431&prodName=2SA1971 Description: PB-FREE POWER TRANSISTOR PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
товар відсутній
2SA1971(TE12L,F) 2SA1971(TE12L,F) Toshiba Semiconductor and Storage 2SA1971_datasheet_en_20131101.pdf?did=20431&prodName=2SA1971 Description: PB-FREE POWER TRANSISTOR PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
на замовлення 610 шт:
термін постачання 21-31 дні (днів)
7+41.89 грн
10+ 34.35 грн
100+ 23.89 грн
500+ 17.5 грн
Мінімальне замовлення: 7
7UL1G02FS,LF 7UL1G02FS,LF Toshiba Semiconductor and Storage 7UL1G02FS_datasheet_en_20221021.pdf?did=60331&prodName=7UL1G02FS Description: IC GATE NOR 1CH 2-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+5.68 грн
Мінімальне замовлення: 10000
7UL1G02FS,LF 7UL1G02FS,LF Toshiba Semiconductor and Storage 7UL1G02FS_datasheet_en_20221021.pdf?did=60331&prodName=7UL1G02FS Description: IC GATE NOR 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10+29.61 грн
13+ 21.56 грн
25+ 19.42 грн
100+ 12.59 грн
250+ 10.6 грн
500+ 8.62 грн
1000+ 6.52 грн
2500+ 5.87 грн
5000+ 5.54 грн
Мінімальне замовлення: 10
TW107Z65C,S1F Toshiba Semiconductor and Storage docget.jsp?did=149835&prodName=TW107Z65C Description: G3 650V SIC-MOSFET TO-247-4L 10
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+577.74 грн
30+ 444.38 грн
TW140Z120C,S1F Toshiba Semiconductor and Storage docget.jsp?did=149839&prodName=TW140Z120C Description: G3 1200V SIC-MOSFET TO-247-4L 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Rds On (Max) @ Id, Vgs: 191mOhm @ 10A, 18V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+675.24 грн
10+ 557.11 грн
100+ 464.23 грн
TW083Z65C,S1F Toshiba Semiconductor and Storage Description: G3 650V SIC-MOSFET TO-247-4L 83
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5V @ 600µA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
Rds On (Max) @ Id, Vgs: 118mOhm @ 15A, 18V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+761.9 грн
10+ 674.15 грн
100+ 569.4 грн
TW048Z65C,S1F Toshiba Semiconductor and Storage TW048Z65C_datasheet_en_20230616.pdf?did=149823&prodName=TW048Z65C Description: G3 650V SIC-MOSFET TO-247-4L 48
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
товар відсутній
TW060Z120C,S1F Toshiba Semiconductor and Storage Description: G3 1200V SIC-MOSFET TO-247-4L 6
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
товар відсутній
TW027Z65C,S1F Toshiba Semiconductor and Storage TW027Z65C_datasheet_en_20230616.pdf?did=151451&prodName=TW027Z65C Description: G3 650V SIC-MOSFET TO-247-4L 27
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Rds On (Max) @ Id, Vgs: 38mOhm @ 29A, 18V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1385.86 грн
10+ 1185.71 грн
100+ 1037.1 грн
TW045Z120C,S1F Toshiba Semiconductor and Storage Description: G3 1200V SIC-MOSFET TO-247-4L 4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V
товар відсутній
TW030Z120C,S1F Toshiba Semiconductor and Storage Description: G3 1200V SIC-MOSFET TO-247-4L 3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
товар відсутній
TW015Z65C,S1F Toshiba Semiconductor and Storage Description: G3 650V SIC-MOSFET TO-247-4L 15
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
товар відсутній
TW015Z120C,S1F TW015Z120C,S1F Toshiba Semiconductor and Storage TW015Z120C_datasheet_en_20230616.pdf?did=151443&prodName=TW015Z120C Description: G3 1200V SIC-MOSFET TO-247-4L 1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+4051.42 грн
10+ 3546.83 грн
100+ 3192.14 грн
TLP358H(F) TLP358H(F) Toshiba Semiconductor and Storage TLP358H(F).pdf Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
2+233.26 грн
Мінімальне замовлення: 2
RN1117MFV,L3F RN1117MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+1.9 грн
Мінімальне замовлення: 8000
RN1117MFV,L3F RN1117MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1114 Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
25+11.55 грн
35+ 8 грн
100+ 4.28 грн
500+ 3.15 грн
1000+ 2.19 грн
2000+ 1.82 грн
Мінімальне замовлення: 25
2SC5714(TE12L,ZF) 2SC5714(TE12L,ZF) Toshiba Semiconductor and Storage 2SC5714_datasheet_en_20131101.pdf?did=20744&prodName=2SC5714 Description: TRANS NPN 20V 4A PW-MINI
Packaging: Box
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товар відсутній
TC7WH34FU,LJ(CT TC7WH34FU,LJ(CT Toshiba Semiconductor and Storage TC7WH34FU_datasheet_en_20200204.pdf?did=20130&prodName=TC7WH34FU Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
товар відсутній
TC7WH34FU,LJ(CT TC7WH34FU,LJ(CT Toshiba Semiconductor and Storage TC7WH34FU_datasheet_en_20200204.pdf?did=20130&prodName=TC7WH34FU Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
12+26 грн
15+ 19.05 грн
25+ 17.19 грн
100+ 11.14 грн
250+ 9.38 грн
500+ 7.62 грн
1000+ 5.77 грн
Мінімальне замовлення: 12
TCR3LM08A,RF Toshiba Semiconductor and Storage Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+6.68 грн
10000+ 6.02 грн
Мінімальне замовлення: 5000
TCR3LM08A,RF Toshiba Semiconductor and Storage Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
12+24.55 грн
15+ 19.54 грн
25+ 17.86 грн
100+ 12.47 грн
250+ 11.3 грн
500+ 9.35 грн
1000+ 6.9 грн
2500+ 6.32 грн
Мінімальне замовлення: 12
TK6P60W,RVQ TK6P60W,RVQ Toshiba Semiconductor and Storage TK6P60W_datasheet_en_20140917.pdf?did=13530&prodName=TK6P60W Description: MOSFET N CH 600V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
товар відсутній
TK6P60W,RVQ TK6P60W,RVQ Toshiba Semiconductor and Storage TK6P60W_datasheet_en_20140917.pdf?did=13530&prodName=TK6P60W Description: MOSFET N CH 600V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 1999 шт:
термін постачання 21-31 дні (днів)
3+127.1 грн
10+ 101.46 грн
100+ 80.75 грн
500+ 64.13 грн
1000+ 54.41 грн
Мінімальне замовлення: 3
TC7MBL3126CFT(EL) TC7MBL3126CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=12250&prodName=TC7MBL3125CFT Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+10.18 грн
Мінімальне замовлення: 2000
TC7MBL3126CFT(EL) TC7MBL3126CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=12250&prodName=TC7MBL3125CFT Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
на замовлення 3998 шт:
термін постачання 21-31 дні (днів)
10+28.89 грн
12+ 23.71 грн
25+ 22.11 грн
100+ 16.61 грн
250+ 15.42 грн
500+ 13.05 грн
1000+ 9.92 грн
Мінімальне замовлення: 10
XPW4R10ANB,L1XHQ XPW4R10ANB,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 70A AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+64.49 грн
10000+ 60.04 грн
Мінімальне замовлення: 5000
TLP700H(D4-TP,F) TLP700H_Rev7.0_2-17-20.pdf
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 2CH GATE DVR 6SDIP
Packaging: Bulk
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SDIP
Rise / Fall Time (Typ): 15µs, 8µs
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
товар відсутній
74VHC138FT TC74VHC138F%2CFN%2CFT%2CFK.pdf
74VHC138FT
Виробник: Toshiba Semiconductor and Storage
Description: IC DECODER 1 X 3:8 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
товар відсутній
74VHC138FT TC74VHC138F%2CFN%2CFT%2CFK.pdf
74VHC138FT
Виробник: Toshiba Semiconductor and Storage
Description: IC DECODER 1 X 3:8 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
на замовлення 1657 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.16 грн
12+ 23.37 грн
25+ 21.78 грн
100+ 16.36 грн
250+ 15.19 грн
500+ 12.86 грн
1000+ 9.77 грн
Мінімальне замовлення: 11
TA58M09S,MATUDQ(J TA58MxxS_2009-09-30.pdf
TA58M09S,MATUDQ(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 9V 500MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 9V
Voltage Dropout (Max): 0.65V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 80 mA
товар відсутній
DF5G5M4N,LF DF5G5M4N_datasheet_en_20220125.pdf?did=57532&prodName=DF5G5M4N
DF5G5M4N,LF
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
DF5G5M4N,LF DF5G5M4N_datasheet_en_20220125.pdf?did=57532&prodName=DF5G5M4N
DF5G5M4N,LF
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 5DFN
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 5-DFN (1.3x0.8)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
TC74LCX14FK(EL,K) TC74LCX14F_datasheet_en_20210326.pdf?did=63362&prodName=TC74LCX14F
TC74LCX14FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
товар відсутній
TC74LCX14FK(EL,K) TC74LCX14F_datasheet_en_20210326.pdf?did=63362&prodName=TC74LCX14F
TC74LCX14FK(EL,K)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
товар відсутній
TLP3924(TP15,F) TLP3924_datasheet_en_20190624.pdf?did=8543&prodName=TLP3924
TLP3924(TP15,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 4µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+128.05 грн
Мінімальне замовлення: 1500
TLP3924(TP15,F) TLP3924_datasheet_en_20190624.pdf?did=8543&prodName=TLP3924
TLP3924(TP15,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 1.5KV PHOTOVOLTAIC 4SSOP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 4µA
Voltage - Isolation: 1500Vrms
Supplier Device Package: 4-SSOP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+285.98 грн
10+ 194.72 грн
100+ 159.47 грн
500+ 126.16 грн
Мінімальне замовлення: 2
RN1110MFV,L3F rn1110mfv_rn1111mfv_.pdf
RN1110MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+1.9 грн
Мінімальне замовлення: 8000
RN1110MFV,L3F rn1110mfv_rn1111mfv_.pdf
RN1110MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.55 грн
35+ 8 грн
100+ 4.28 грн
500+ 3.15 грн
1000+ 2.19 грн
2000+ 1.82 грн
Мінімальне замовлення: 25
SSM6P36FE,LM docget.jsp?did=11736&prodName=SSM6P36FE
SSM6P36FE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
товар відсутній
SSM6P36FE,LM docget.jsp?did=11736&prodName=SSM6P36FE
SSM6P36FE,LM
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 0.33A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
на замовлення 3925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.61 грн
14+ 20.03 грн
100+ 10.13 грн
500+ 7.75 грн
1000+ 5.75 грн
2000+ 4.84 грн
Мінімальне замовлення: 10
TC74AC541F(EL,F) TC74AC541F_datasheet_en_20140301.pdf?did=3090&prodName=TC74AC541F
TC74AC541F(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
товар відсутній
TC74AC541F(EL,F) TC74AC541F_datasheet_en_20140301.pdf?did=3090&prodName=TC74AC541F
TC74AC541F(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
товар відсутній
TCD1209DG(8Z,K) TCD1209DG_Web_Datasheet_en_20190108.pdf?did=13707&prodName=TCD1209DG
TCD1209DG(8Z,K)
Виробник: Toshiba Semiconductor and Storage
Description: CCD IMAGE SENSOR - INTEGRATED CI
Packaging: Tray
Package / Case: 22-CDIP (0.400", 10.16mm)
Type: CCD
Operating Temperature: -25°C ~ 60°C
Voltage - Supply: 11.4V ~ 13V
Pixel Size: 14µm x 14µm
Supplier Device Package: 22-CERDIP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3241.85 грн
10+ 2628.59 грн
25+ 2464.27 грн
TBD62503AFNG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+29.51 грн
6000+ 27 грн
10000+ 25.98 грн
Мінімальне замовлення: 2000
TBD62503AFNG,EL TBD62502AFG_datasheet_en_20150724.pdf?did=29878&prodName=TBD62502AFG
TBD62503AFNG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 300mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
на замовлення 10646 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.33 грн
10+ 59.95 грн
25+ 56.83 грн
100+ 43.82 грн
250+ 40.96 грн
500+ 36.2 грн
1000+ 28.11 грн
Мінімальне замовлення: 5
TCR8BM08A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM08A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=0.8V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.21V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+10.06 грн
10000+ 9.02 грн
Мінімальне замовлення: 5000
TCR8BM08A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM08A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=0.8V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.21V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TCR8BM115A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM115A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=1.15V, DROPOUT=1
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.15V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.255V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+10.06 грн
10000+ 9.02 грн
Мінімальне замовлення: 5000
TCR8BM115A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM115A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=1.15V, DROPOUT=1
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.15V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.255V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TCR8BM18A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM18A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=1.8V, DROPOUT=17
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.305V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+10.06 грн
Мінімальне замовлення: 5000
TCR8BM18A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM18A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=1.8V, DROPOUT=17
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.305V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TCR8BM085A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM085A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=0.85V, DROPOUT=1
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.85V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.215V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+10.06 грн
Мінімальне замовлення: 5000
TCR8BM085A,L3F TCR8BM08A_datasheet_en_20220902.pdf?did=63495&prodName=TCR8BM08A
TCR8BM085A,L3F
Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=0.85V, DROPOUT=1
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.85V
Control Features: Current Limit, Enable
Voltage Dropout (Max): 0.215V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9942 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.33 грн
12+ 25.04 грн
25+ 23.37 грн
100+ 17.56 грн
250+ 16.3 грн
500+ 13.79 грн
1000+ 10.48 грн
2500+ 9.56 грн
Мінімальне замовлення: 10
TDTC124E,LM TDTC124E_datasheet_en_20201113.pdf?did=36706&prodName=TDTC124E
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+1.98 грн
Мінімальне замовлення: 3000
TDTC124E,LM TDTC124E_datasheet_en_20201113.pdf?did=36706&prodName=TDTC124E
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 49 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
27+10.83 грн
36+ 7.86 грн
100+ 4.23 грн
500+ 3.12 грн
1000+ 2.16 грн
Мінімальне замовлення: 27
TLP241A(D4,LF1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(D4,LF1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+140.1 грн
10+ 89.71 грн
100+ 69.03 грн
Мінімальне замовлення: 3
TLP2366(TPR,E docget.jsp?did=8527&prodName=TLP2366
TLP2366(TPR,E
Виробник: Toshiba Semiconductor and Storage
Description: 20MBPS HIGH SPEED COUPLER; SO6;
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.61V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 15ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+31.03 грн
Мінімальне замовлення: 3000
SSM14N956L,EFF docget.jsp?did=151761&prodName=SSM14N956L
Виробник: Toshiba Semiconductor and Storage
Description: 12V COMMON DRAIN MOSFET RSS(ON):
Packaging: Tape & Reel (TR)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
товар відсутній
SSM14N956L,EFF docget.jsp?did=151761&prodName=SSM14N956L
Виробник: Toshiba Semiconductor and Storage
Description: 12V COMMON DRAIN MOSFET RSS(ON):
Packaging: Cut Tape (CT)
Package / Case: 14-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.33W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Supplier Device Package: TCSPED-302701
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+96.05 грн
10+ 75.87 грн
100+ 59 грн
500+ 46.93 грн
1000+ 38.23 грн
2000+ 35.99 грн
5000+ 33.71 грн
Мінімальне замовлення: 4
2SA1971(TE12L,F) 2SA1971_datasheet_en_20131101.pdf?did=20431&prodName=2SA1971
2SA1971(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: PB-FREE POWER TRANSISTOR PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
товар відсутній
2SA1971(TE12L,F) 2SA1971_datasheet_en_20131101.pdf?did=20431&prodName=2SA1971
2SA1971(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: PB-FREE POWER TRANSISTOR PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
на замовлення 610 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+41.89 грн
10+ 34.35 грн
100+ 23.89 грн
500+ 17.5 грн
Мінімальне замовлення: 7
7UL1G02FS,LF 7UL1G02FS_datasheet_en_20221021.pdf?did=60331&prodName=7UL1G02FS
7UL1G02FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.68 грн
Мінімальне замовлення: 10000
7UL1G02FS,LF 7UL1G02FS_datasheet_en_20221021.pdf?did=60331&prodName=7UL1G02FS
7UL1G02FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: fSV
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.61 грн
13+ 21.56 грн
25+ 19.42 грн
100+ 12.59 грн
250+ 10.6 грн
500+ 8.62 грн
1000+ 6.52 грн
2500+ 5.87 грн
5000+ 5.54 грн
Мінімальне замовлення: 10
TW107Z65C,S1F docget.jsp?did=149835&prodName=TW107Z65C
Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 10
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Rds On (Max) @ Id, Vgs: 152mOhm @ 10A, 18V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+577.74 грн
30+ 444.38 грн
TW140Z120C,S1F docget.jsp?did=149839&prodName=TW140Z120C
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Rds On (Max) @ Id, Vgs: 191mOhm @ 10A, 18V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+675.24 грн
10+ 557.11 грн
100+ 464.23 грн
TW083Z65C,S1F
Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 83
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5V @ 600µA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
Rds On (Max) @ Id, Vgs: 118mOhm @ 15A, 18V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+761.9 грн
10+ 674.15 грн
100+ 569.4 грн
TW048Z65C,S1F TW048Z65C_datasheet_en_20230616.pdf?did=149823&prodName=TW048Z65C
Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 48
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.6mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
товар відсутній
TW060Z120C,S1F
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 6
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.2mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
товар відсутній
TW027Z65C,S1F TW027Z65C_datasheet_en_20230616.pdf?did=151451&prodName=TW027Z65C
Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 27
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Rds On (Max) @ Id, Vgs: 38mOhm @ 29A, 18V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1385.86 грн
10+ 1185.71 грн
100+ 1037.1 грн
TW045Z120C,S1F
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V
товар відсутній
TW030Z120C,S1F
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 5V @ 13mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
товар відсутній
TW015Z65C,S1F
Виробник: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247-4L 15
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
товар відсутній
TW015Z120C,S1F TW015Z120C_datasheet_en_20230616.pdf?did=151443&prodName=TW015Z120C
TW015Z120C,S1F
Виробник: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4051.42 грн
10+ 3546.83 грн
100+ 3192.14 грн
TLP358H(F) TLP358H(F).pdf
TLP358H(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5.5A, 5.5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+233.26 грн
Мінімальне замовлення: 2
RN1117MFV,L3F docget.jsp?did=18763&prodName=RN1114
RN1117MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+1.9 грн
Мінімальне замовлення: 8000
RN1117MFV,L3F docget.jsp?did=18763&prodName=RN1114
RN1117MFV,L3F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+11.55 грн
35+ 8 грн
100+ 4.28 грн
500+ 3.15 грн
1000+ 2.19 грн
2000+ 1.82 грн
Мінімальне замовлення: 25
2SC5714(TE12L,ZF) 2SC5714_datasheet_en_20131101.pdf?did=20744&prodName=2SC5714
2SC5714(TE12L,ZF)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 4A PW-MINI
Packaging: Box
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
товар відсутній
TC7WH34FU,LJ(CT TC7WH34FU_datasheet_en_20200204.pdf?did=20130&prodName=TC7WH34FU
TC7WH34FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
товар відсутній
TC7WH34FU,LJ(CT TC7WH34FU_datasheet_en_20200204.pdf?did=20130&prodName=TC7WH34FU
TC7WH34FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26 грн
15+ 19.05 грн
25+ 17.19 грн
100+ 11.14 грн
250+ 9.38 грн
500+ 7.62 грн
1000+ 5.77 грн
Мінімальне замовлення: 12
TCR3LM08A,RF
Виробник: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+6.68 грн
10000+ 6.02 грн
Мінімальне замовлення: 5000
TCR3LM08A,RF
Виробник: Toshiba Semiconductor and Storage
Description: LDO IOUT: 300MA PD: 420MW VIN: 6
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 2.2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Current Limit, Enable
PSRR: 74dB ~ 43dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+24.55 грн
15+ 19.54 грн
25+ 17.86 грн
100+ 12.47 грн
250+ 11.3 грн
500+ 9.35 грн
1000+ 6.9 грн
2500+ 6.32 грн
Мінімальне замовлення: 12
TK6P60W,RVQ TK6P60W_datasheet_en_20140917.pdf?did=13530&prodName=TK6P60W
TK6P60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
товар відсутній
TK6P60W,RVQ TK6P60W_datasheet_en_20140917.pdf?did=13530&prodName=TK6P60W
TK6P60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 1999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.1 грн
10+ 101.46 грн
100+ 80.75 грн
500+ 64.13 грн
1000+ 54.41 грн
Мінімальне замовлення: 3
TC7MBL3126CFT(EL) docget.jsp?did=12250&prodName=TC7MBL3125CFT
TC7MBL3126CFT(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+10.18 грн
Мінімальне замовлення: 2000
TC7MBL3126CFT(EL) docget.jsp?did=12250&prodName=TC7MBL3125CFT
TC7MBL3126CFT(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
на замовлення 3998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+28.89 грн
12+ 23.71 грн
25+ 22.11 грн
100+ 16.61 грн
250+ 15.42 грн
500+ 13.05 грн
1000+ 9.92 грн
Мінімальне замовлення: 10
XPW4R10ANB,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPW4R10ANB,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+64.49 грн
10000+ 60.04 грн
Мінімальне замовлення: 5000
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